CN115453307A - Semiconductor device electrical parameter testing device, testing method, medium and equipment - Google Patents
Semiconductor device electrical parameter testing device, testing method, medium and equipment Download PDFInfo
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Abstract
The invention provides a device, a method, a medium and equipment for testing electrical parameters of a semiconductor device, and belongs to the technical field of semiconductor device measurement. The test device includes: the constant-power temperature-rise circuit comprises a constant-power temperature-rise circuit, an electrical parameter measuring circuit and a switching circuit, wherein the switching circuit is used for switching on the constant-power temperature-rise circuit or the electrical parameter measuring circuit according to an external control instruction; the constant-power temperature rise circuit is used for providing a preset test environment for the tested device; the electrical parameter measurement circuit is used for measuring electrical parameters of the tested device under a preset test environment; constant power temperature rise circuit includes: constant current circuit and temperature acquisition circuit. The constant current circuit provides constant power and stable temperature for the device to be tested according to the heating power acquired by the temperature acquisition circuit and calculated by the background system, has no duty ratio, can effectively reduce the temperature rise time of the device to be tested, maintains the stable temperature value, shortens the high-temperature electrical parameter test time in the device production test and improves the test accuracy.
Description
Technical Field
The invention relates to the technical field of semiconductor device measurement, in particular to a semiconductor device electrical parameter testing device, a testing method, a medium and equipment.
Background
Third-generation semiconductor material devices on the market, such as GaN (gallium nitride), siC (silicon carbide), and the like, are often used in the fields of communication base stations, satellites, mobile phone chargers, new energy electric vehicles, rail transit, direct current and alternating current power transmission and transformation, and the like. Along with the use environment of high power and high temperature, the electrical parameters of various aspects of the device are changed, thereby affecting the performance of the device. Therefore, it is particularly important to test the electrical parameters of the device after power and high temperature holding.
The existing methods for testing high-temperature electrical parameters at present are as follows: 1. the ambient temperature is heated to a set value by a heating Device such as a hot box, and parameter measurement is performed after the temperature of a DUT (Device Under Test) reaches the set value. However, the method takes a long time, affects the production speed, cannot adjust the temperature as required in real time, and also affects the accuracy of measurement because the junction temperature of the device cannot be judged whether to reach a set temperature value. 2. The other method is to turn on the DUT completely, operate the DUT in the saturation region, increase the power consumption of the device with a large current, thereby heating the device, and then maintain the temperature within a fixed range by switching the DUT on and off. However, the switching frequency cannot be controlled by detecting the junction temperature of the device in real time, so that the junction temperature of the DUT cannot be controlled, the device can be damaged immediately when a large current is applied, and the electrical parameters of the device can be changed and hidden damages exist; and the on-off mode of the switch has idle time, so that the speed of the temperature rise and the test cannot be effectively increased. 3. And inputting heating current by using the idle pin to increase the test temperature of the chip to be tested, and confirming the temperature of the DUT by measuring the voltage drop of the parasitic diode on the idle pin. But is obviously not suitable for DUTs without redundant pins, such as small SOT23, SOT89TO-220, TO medium-TO large TO-3P, TO-247, TO-252 (D-PAK), TO-263 (D2 PAK), etc.; in addition, the heating and measuring parasitic diode voltage drop principles are different, the heating and measuring circuits need to be switched back and forth, and the testing speed cannot be effectively increased.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defects existing in the high temperature electrical parameter test of the semiconductor material device in the prior art, so as to provide a semiconductor device electrical parameter test apparatus, a test method, a medium and a device.
In order to achieve the purpose, the invention provides the following technical scheme:
in a first aspect, an embodiment of the present invention provides a semiconductor device electrical parameter testing apparatus, including: a constant power temperature rise circuit, an electrical parameter measuring circuit and a switching circuit, wherein,
the switching circuit is used for switching on the constant-power temperature rise circuit or the electrical parameter measuring circuit according to an external control instruction;
the constant-power temperature rise circuit is used for providing a preset test environment for the tested device;
the electrical parameter measurement circuit is used for measuring the electrical parameters of the device under test in a preset test environment;
the constant power temperature rise circuit includes: a constant current circuit and a temperature acquisition circuit, wherein,
the temperature acquisition circuit is arranged at a preset position away from the device to be tested, and is used for acquiring the air temperature at the preset position or the shell temperature of the device to be tested and sending the air temperature or the shell temperature to the background system, and the background system calculates the heating power required by the device to be tested according to a node temperature value set by a user, the air temperature or the shell temperature;
the first end of the constant current circuit is connected with the control end of the device to be tested, the second end of the constant current circuit is connected with the second end of the device to be tested, the third end of the constant current circuit is grounded, the constant current circuit is used for providing required heating power for the device to be tested, and the device to be tested works in the amplification area.
Optionally, the constant current circuit includes: an analog-to-digital converter, an operational amplifier, a first resistor, a second resistor and a third resistor, wherein,
one end of the analog-to-digital converter is connected with an external control instruction, and the other end of the analog-to-digital converter is respectively connected with the inverting input end of the operational amplifier and one end of the second resistor through the first resistor;
the non-inverting input end of the operational amplifier is grounded, and the output end of the operational amplifier is connected with the control end of the device under test through an electronic switch in the switching circuit;
one end of the third resistor is respectively connected with the other end of the second resistor and the second end of the tested device, and the other end of the third resistor is grounded.
Optionally, the apparatus for testing electrical parameters of a semiconductor device further comprises: a voltage acquisition circuit and a current acquisition circuit, wherein,
the voltage acquisition circuit is connected with the device to be tested in parallel and is used for acquiring voltage values at two ends of the device to be tested;
the current acquisition circuit is connected with the third resistor in parallel and is used for acquiring the value of current flowing through the device under test.
Optionally, the apparatus for testing electrical parameters of a semiconductor device further comprises: and the power supply circuit is connected with the constant-power temperature rise circuit or the electrical parameter measuring circuit in parallel and is used for supplying power to the device to be tested in the constant-power temperature rise circuit or the electrical parameter measuring circuit.
Optionally, the electrical parameter measurement circuit comprises: a drive circuit and a follow current circuit, wherein,
one end of the driving circuit is connected with an external control signal, and the other end of the driving circuit is connected with the control end of the tested device through an electronic switch in the switching circuit;
one end of the follow current circuit is connected with the anode of the power supply circuit, and the other end of the follow current circuit is connected with the first end of the tested device.
Optionally, the driving circuit includes: a first diode, a first adjustable resistor, a second diode and a second adjustable resistor, wherein,
the anode of the first diode is connected with an external high-level signal, and the cathode of the first diode is connected with the control end of the device under test through the first adjustable resistor and an electronic switch in the switching circuit;
the cathode of the second diode is connected with an external low level signal, and the anode of the second diode is connected with the control end of the tested device through the second adjustable resistor and the electronic switch in the switching circuit.
Optionally, the free-wheeling circuit comprises: a third diode and an inductor, wherein,
the cathode of the third diode is respectively connected with one end of the inductor and the anode of the power supply circuit, and the anode of the third diode is respectively connected with the other end of the inductor and the first end of the device to be tested.
Optionally, the power supply circuit includes: a program-controlled power supply, a capacitor set and a first switch, wherein,
the positive pole of the programmable power supply is connected with one end of the capacitor bank through the first switch, and the negative pole of the programmable power supply is connected with the other end of the capacitor bank and then grounded.
In a second aspect, an embodiment of the present invention provides a method for testing electrical parameters of a semiconductor device, which is used in the apparatus for testing electrical parameters of a semiconductor device according to the first aspect of the present invention, and the method for testing electrical parameters of a semiconductor device includes:
the semiconductor device electrical parameter testing device is switched to the constant-power temperature rise circuit through the switching circuit;
acquiring a node temperature value set by a user, and acquiring the air temperature away from a preset position of a tested device or the shell temperature of the tested device;
sending the air temperature or the shell temperature and the node temperature value to a background system, and acquiring the heating power required by the tested device calculated by the background system;
calculating a voltage value required to be configured by the constant current circuit according to the heating power required by the device to be tested, and configuring parameters of the constant current circuit according to the voltage value;
and switching the semiconductor device electrical parameter testing device to an electrical parameter measuring circuit through a switching circuit to measure the electrical parameters of the device under test.
Optionally, the calculating a voltage value that the constant current circuit needs to be configured according to the heating power required by the device under test, and configuring parameters of the constant current circuit according to the voltage value includes:
calculating a voltage value required to be configured by an analog-to-digital converter according to the heating power required by the device to be tested, and configuring the voltage of the analog-to-digital converter according to the voltage value;
acquiring voltage values at two ends of the device to be tested and current values flowing through the device to be tested;
and adjusting the voltage of the analog-to-digital converter and the current value flowing through the device under test to maintain the power of the device under test at the required heating power.
In a third aspect, an embodiment of the present invention provides a computer-readable storage medium, where computer instructions are stored, and the computer instructions are configured to cause a computer to execute the test method according to the first aspect of the embodiment of the present invention.
In a fourth aspect, an embodiment of the present invention provides a computer device, including: the testing device comprises a memory and a processor, wherein the memory and the processor are connected with each other in a communication mode, the memory stores computer instructions, and the processor executes the computer instructions so as to execute the testing method of the first aspect of the embodiment of the invention.
The technical scheme of the invention has the following advantages:
the invention provides a semiconductor device electrical parameter testing device, comprising: the constant power temperature rise circuit comprises a constant power temperature rise circuit, an electrical parameter measuring circuit and a switching circuit, wherein the switching circuit is used for switching on the constant power temperature rise circuit or the electrical parameter measuring circuit according to an external control instruction; the constant-power temperature rise circuit is used for providing a preset test environment for the tested device; the electrical parameter measurement circuit is used for measuring electrical parameters of the tested device under a preset test environment; constant power temperature rise circuit includes: the device comprises a constant current circuit and a temperature acquisition circuit, wherein the temperature acquisition circuit is arranged at a preset position away from a tested device, the temperature acquisition circuit is used for acquiring the air temperature at the preset position or the shell temperature of the tested device and sending the air temperature or the shell temperature to a background system, and the background system calculates the heating power required by the tested device according to a node temperature value, the air temperature or the shell temperature set by a user; the first end of the constant current circuit is connected with the control end of the tested device, the second end of the constant current circuit is connected with the second end of the tested device, the third end of the constant current circuit is grounded, the constant current circuit is used for providing required heating power for the tested device, and the tested device works in the amplification area. The device to be tested works in the amplification area, so that the device to be tested consumes a large amount of power, junction temperature is rapidly increased, and high-temperature electrical parameter testing time in device production testing is shortened. In addition, because the device to be tested works in the amplification area, the idle time generated in the on-off mode of the switch is avoided. The temperature acquisition circuit is used for acquiring the air temperature or the shell temperature of the tested device in real time, so that whether the junction temperature of the tested device reaches a set temperature value or not is accurately judged, and the measurement accuracy is improved. The constant current circuit provides constant power and stable temperature for the device to be tested according to the heating power acquired by the temperature acquisition circuit and calculated by the background system, has no duty ratio, can effectively reduce the temperature rise time of the device to be tested, maintains a stable temperature value, shortens the high-temperature electrical parameter test time in the device production test, and improves the test accuracy.
According to the method for testing the electrical parameters of the semiconductor device, the test environment can be built and the parameter test program can be completed by switching the working state of the test device, so that the test speed is improved. According to the heating power acquired by the temperature acquisition circuit and calculated by the background system, constant power and stable temperature are provided for the device to be tested, the duty ratio is not required, the temperature rise time of the device to be tested can be effectively reduced, the stable temperature value is maintained, the high-temperature electrical parameter test time in the device production test is shortened, and the test accuracy is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a circuit diagram of an electrical parameter testing apparatus for a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a constant power temperature rise circuit according to an embodiment of the present invention;
FIG. 3 is a circuit diagram of an electrical parameter measurement circuit according to an embodiment of the present invention;
FIG. 4 is a flowchart showing a specific example of a method for testing electrical parameters of a semiconductor device according to an embodiment of the present invention;
FIG. 5 is a graph of test parameters in an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a specific example of the computer device provided in the embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment of the invention provides a semiconductor device electrical parameter testing device, which comprises: the constant-power temperature-rise circuit comprises a constant-power temperature-rise circuit, an electrical parameter measuring circuit and a switching circuit, wherein the switching circuit is used for switching on the constant-power temperature-rise circuit or the electrical parameter measuring circuit according to an external control instruction; the constant-power temperature rise circuit is used for providing a preset test environment for a DUT (device under test); the electrical parameter measurement circuit is used for measuring the electrical parameters of the DUT under the preset test environment.
In one embodiment, the device under test is a semiconductor device. As shown in fig. 1, the switching circuit in the electrical parameter testing apparatus of the semiconductor device includes an electronic switch K, a first controllable switch S1 and a second controllable switch S2. When the external control command controls the electronic switch K to turn on the KB contact, the first controllable switch S1 is turned on, and the second controllable switch S2 is turned on, the semiconductor device electrical parameter testing apparatus is switched to the constant power temperature-rising circuit shown in fig. 2, that is, the constant power temperature-rising circuit is turned on. When the external control instruction controls the electronic switch K to turn on the KA contact, the first controllable switch S1 is turned on, and the second controllable switch S2 is turned off, the electrical parameter testing apparatus of the semiconductor device is switched to the electrical parameter measuring circuit shown in fig. 3, that is, the electrical parameter measuring circuit is turned on.
In one embodiment, when the apparatus for testing electrical parameters of a semiconductor device is switched to a constant power temperature rise circuit as shown in fig. 2, the constant power temperature rise circuit comprises: constant current circuit and temperature acquisition circuit.
In a specific embodiment, the temperature acquisition circuit is arranged at a preset position away from the DUT, the temperature acquisition circuit is configured to acquire an air temperature at the preset position or a case temperature of the DUT and send the air temperature or the case temperature to the background system, and the background system calculates a heating power required by the DUT according to a node temperature value, the air temperature, or the case temperature set by a user.
The first end of the constant current circuit is connected with the control end of the Device Under Test (DUT), the second end of the constant current circuit is connected with the second end of the Device Under Test (DUT), the third end of the constant current circuit is grounded, the constant current circuit is used for providing the required heating power for the Device Under Test (DUT), and the Device Under Test (DUT) works in the amplification area.
In the embodiment of the present invention, as shown in fig. 2, the constant current circuit includes: the device comprises an analog-to-digital converter (DAC), an operational amplifier, a first resistor R1, a second resistor R2 and a third resistor R3, wherein one end of the DAC is connected with an external control instruction, and the other end of the DAC is connected with the inverting input end of the operational amplifier and one end of the second resistor R2 through the first resistor R1; the positive phase input end of the operational amplifier is grounded, and the output end of the operational amplifier is connected with the control end of a DUT (device under test) through an electronic switch in the switching circuit; one end of the third resistor R3 is connected to the other end of the second resistor R2 and the second end of the DUT, respectively, and the other end of the third resistor R3 is grounded.
In particular, the constant power temperature rise circuit aims to operate the DUT in the amplification region, causing itself to consume a large amount of power, thereby causing the junction temperature to rise rapidly. And temperature is directly proportional to power. The temperature acquisition circuit is used for confirming the temperature Ta of air near the DUT by placing the resistance-type temperature sensor close to the DUT, and sampling signals of the sensor reach a control part of the system through the operational amplifier circuit AMP and ADC; or an infrared sensor with higher reaction speed and higher real-time degree is selected to directly measure the temperature Tc on the DUT shell. Then, the value of the required heating power P is calculated by the numerical value of Ta or Tc, and the formula is as follows:
Wherein, T j A target temperature value for the DUT junction temperature, set by a user; r thja Is the thermal resistance value, R, of the junction of the semiconductor device to air thjc Is the junction-to-housing thermal resistance of the semiconductor device, the thermal resistance R thja 、R thjc The query may be based on a chip manual or provided by the user.
DAC, operational amplifier, first resistor R1, second resistorThe two resistors R2 and the third resistor R3 form a constant current circuit, so that the DUT works in an amplification region and a stable I is set for the DUT DS The current is applied. The correlation is calculated as follows:
first, power P and voltage U are calculated DC Corresponding to I DS Current value:
U DC =V DS +I DS xr 3, DUT V required for subsequent electrical parameter testing DS The voltage value is set. Wherein, V DS The voltage clamping circuit, the operational amplifier circuit and the analog-to-digital conversion circuit AD are used for sampling the V of the DUT in real time DS And can display V via oscilloscope OSC DS And (4) waveform. I is DS The current passes through the third resistor R3 to generate a potential difference, and the I of the DUT is sampled in real time through the operational amplifier circuit and the analog-to-digital conversion circuit AD DS The value is obtained.
Then, calculating the U of the DAC required setting output DAC The value:
since the circuit is in a negative feedback amplification mode, U is in the moment DAC Values should be negative. For example, when the required power P is 100W DC At 100V, then I DS The current value of (1A); when R1=10K Ω, R2=1K Ω, and R3=0.1 Ω, U is calculated DAC And = 1V. And then calculating the actual power P of the tested device according to the voltage value at the two ends of the tested device and the current value flowing through the tested device DUT . Because the power consumption of the third resistor R3, the required heating power and the actual heating power may have difference, the output of the DAC is adjusted, and I is changed DS Magnitude of current, such that P DUT The power of 100W is maintained, and the purpose of maintaining the test environment is achieved. Alternatively, the power consumption P of the third resistor R3 can be calculated R =I DS ×I DS X R3, i.e. P R =0.1W. Obtaining the actual power P of the tested device DUT =P-P R =99.9W。
In one embodiment, when the electrical parameter testing apparatus for semiconductor devices is switched to the electrical parameter measuring circuit shown in fig. 3, the electrical parameter measuring circuit includes: the device comprises a driving circuit and a follow current circuit, wherein one end of the driving circuit is connected with an external control signal, and the other end of the driving circuit is connected with the control end of a DUT (device under test) through an electronic switch in a switching circuit; one end of the follow current circuit is connected with the positive electrode of the power supply circuit, and the other end of the follow current circuit is connected with the first end of the DUT.
In one embodiment, the measurement system enters the electrical parameter measurement phase when the DUT temperature reaches a set point. The drive circuit drives the DUT to turn on and off through the synchronous control timing sent by the system. The free-wheeling circuit is used for controlling the direction of the signal and the level change speed of the signal.
In the embodiment of the present invention, as shown in fig. 3, the driving circuit includes: the device comprises a first diode D1, a first adjustable resistor R4, a second diode D2 and a second adjustable resistor R5, wherein the anode of the first diode D1 is connected with an external high level signal, and the cathode of the first diode D1 is connected with the control end of a Device Under Test (DUT) through the first adjustable resistor R4 and an electronic switch in a switching circuit; the cathode of the second diode D2 is connected to an external low level signal, and the anode of the second diode D2 is connected to the control terminal of the DUT through the second adjustable resistor R5 and the electronic switch in the switching circuit.
A freewheeling circuit comprising: and a third diode D3 and an inductor L, wherein a cathode of the third diode D3 is connected to one end of the inductor L and an anode of the power supply circuit, respectively, and an anode of the third diode D3 is connected to the other end of the inductor L and the first end of the device under test DUT, respectively.
Specifically, the drive circuit drives the on-off of the DUT according to the received drive signal source, and when the drive signal source is at a high level, the DUT is switched on; when the driving signal source is low, the DUT is turned off. The inductance L being used to control I DS Current ramp rate, U when the drive signal source is saturated to turn on the DUT DC The current of the inductor L rises linearly when the inductor L is added, and the current expression is as follows:
due to U DC And L are both constant, then I DS The current is determined by the time t, the longer the time, the larger the current, thereby controlling the I of the system loop DS MAX value.
The third diode D3 is a high voltage fast recovery diode, and when the DUT is turned off, the current in the load inductor L is freewheeling by the third diode D3, causing the loop current to slowly decay.
V DS The voltage clamping circuit, the operational amplifier circuit and the analog-to-digital conversion circuit AD are used for sampling the voltage V of the DUT in real time DS The value is obtained. I is DS The current passes through the third resistor R3 to generate a potential difference, and the I of the DUT is sampled in real time through the operational amplifier circuit and the analog-to-digital conversion circuit AD DS The value is obtained.
Synchronous control of the timing sequence by system presets, and V DS 、I DS The ADC sampling circuit of (1) can measure electrical parameters of various aspects of the DUT, such as static on-Resistance (RDSON), dynamic on-resistance (DRDSON), and switching time (SWT) parameters, which are important for third generation semiconductor material devices, such as on-delay time (Td on), on-rise time (Tr), off-delay time (Td off), off-fall time (Tf), and other electrical parameters.
The third resistor R3 is a precise four-pin resistor which is shared by the two parts of the constant power temperature rise circuit and the electrical parameter measurement circuit and is a two-part circuit I DS The sampling resistor for current sampling replaces the function of a current transformer. The constant power temperature rise circuit further utilizes a third resistor R3 to set I DS The current is applied.
In one embodiment, as shown in fig. 1, the apparatus for testing electrical parameters of a semiconductor device further comprises: the device comprises a voltage acquisition circuit and a current acquisition circuit, wherein the voltage acquisition circuit is connected with a Device Under Test (DUT) in parallel and is used for acquiring voltage values V at two ends of the DUT DS (ii) a The current acquisition circuit is connected with the third resistor in parallel and is used for acquiring the current value I flowing through the DUT DS 。
In a concrete exampleIn the examples, V DS 、I DS Through clamp circuit, fortune circuit and analog-to-digital conversion circuit AD, by the real-time sampling monitoring of system, there are two purposes: (1) by monitoring V in real time DS 、I DS And (4) judging whether the DUT is abnormal or damaged, thereby sorting good pipes and bad pipes. (2) Through signal processing and judgment of the system control part, the real-time power value of the DUT is calculated, and I is adjusted by changing the output value of the DAC DS In order to control and stabilize the real-time power of the DUT.
In one embodiment, as shown in fig. 1, the apparatus for testing electrical parameters of a semiconductor device further comprises: and the power supply circuit is connected with the constant-power temperature rise circuit or the electrical parameter measuring circuit in parallel and is used for supplying power to a DUT (device under test) in the constant-power temperature rise circuit or the electrical parameter measuring circuit.
In one embodiment, a power supply circuit includes: the capacitor bank C comprises a programmable power supply DC, a capacitor bank C and a first switch K1, wherein the positive pole of the programmable power supply DC is connected with one end of the capacitor bank C through the first switch K1, and the negative pole of the programmable power supply DC is connected with the other end of the capacitor bank C and then grounded.
In the embodiment of the invention, when the electrical parameter testing device of the semiconductor device is switched into the constant-power temperature rise circuit or the electrical parameter measuring circuit, the first switch K1 is closed, and the programmable power supply DC and the capacitor bank C provide V for the DUT DS Voltage and I DS The current is applied.
The invention provides a semiconductor device electrical parameter testing device, comprising: the constant-power temperature-rise circuit comprises a constant-power temperature-rise circuit, an electrical parameter measuring circuit and a switching circuit, wherein the switching circuit is used for switching on the constant-power temperature-rise circuit or the electrical parameter measuring circuit according to an external control instruction; the constant-power temperature rise circuit is used for providing a preset test environment for the tested device; the electrical parameter measurement circuit is used for measuring electrical parameters of the tested device under a preset test environment; constant power temperature rise circuit includes: the temperature acquisition circuit is arranged at a preset position away from the device to be detected, and is used for acquiring the air temperature at the preset position or the shell temperature of the device to be detected and sending the air temperature or the shell temperature to the background system, and the background system calculates the heating power required by the device to be detected according to the node temperature value, the air temperature or the shell temperature set by a user; the first end of the constant current circuit is connected with the control end of the tested device, the second end of the constant current circuit is connected with the second end of the tested device, the third end of the constant current circuit is grounded, the constant current circuit is used for providing required heating power for the tested device, and the tested device works in the amplification area. The device to be tested works in the amplification area, so that the device to be tested consumes a large amount of power, junction temperature is rapidly increased, and high-temperature electrical parameter testing time in device production testing is shortened. In addition, because the device to be tested works in the amplification area, the idle time generated in the on-off mode of the switch is avoided. The temperature acquisition circuit is used for acquiring the air temperature or the shell temperature of the tested device in real time, so that whether the junction temperature of the tested device reaches a set temperature value or not is accurately judged, and the measurement accuracy is improved. The constant current circuit provides constant power and stable temperature for the device to be tested according to the heating power acquired by the temperature acquisition circuit and calculated by the background system, has no duty ratio, can effectively reduce the temperature rise time of the device to be tested, maintains a stable temperature value, shortens the high-temperature electrical parameter test time in the device production test, and improves the test accuracy. In addition, the constant-power temperature rise circuit or the electrical parameter measuring circuit can be conducted through switching of the switching circuit, the testing device is simplified, the utilization rate of the testing device is improved, and the cost of the testing device is reduced.
An embodiment of the present invention further provides a method for testing electrical parameters of a semiconductor device, which is used for the apparatus for testing electrical parameters of a semiconductor device and the method for testing electrical parameters of a semiconductor device, as shown in fig. 4, and includes the following steps:
step S11: the semiconductor device electrical parameter testing device is switched to the constant power temperature rise circuit through the switching circuit.
In a specific embodiment, when the electrical parameter testing apparatus for semiconductor device shown in fig. 1 is used to perform the electrical parameter testing of semiconductor device, the first controllable switch S1 is first controlled to be turned off and the second controllable switch S2 is first controlled to be turned on, and the V set by the user is used to test the electrical parameter of semiconductor device DS The value configures the DC voltage of the programmable power supply, after which the first switch K1 is closed with a delay.
After the program-controlled power supply DC voltage configuration program is completed, a preset test environment needs to be provided for the DUT. When the preset test environment is in the constant power temperature rise mode, the electronic switch K is controlled to be switched on the KB contact, the first controllable switch S1 is switched on, and the second controllable switch S2 is switched on, so that the semiconductor device electrical parameter test apparatus is switched to the constant power temperature rise circuit shown in fig. 2.
Step S12: and acquiring a node temperature value set by a user, and acquiring the air temperature away from a preset position of the device to be tested or the shell temperature of the device to be tested.
In a specific embodiment, a resistance temperature sensor is required to be arranged close to a DUT, the sensor passes through an operational Amplifier (AMP) and an analog-to-digital converter (ADC), and a sampling signal reaches a control part of a system to confirm the temperature Ta of air near the DUT; or an infrared sensor with higher reaction speed and higher real-time degree is selected to directly measure the temperature Tc on the shell of the DUT.
Step S13: and sending the air temperature or the shell temperature and the node temperature value to a background system, and acquiring the heating power required by the tested device calculated by the background system.
In one embodiment, the required heating power P is calculated by the value of Ta or Tc and the junction temperature value, and the formula is as follows:
Wherein, T j A target temperature value for the DUT junction temperature, set by a user; r thja Is the junction-to-air thermal resistance, R, of the semiconductor device thjc Is the junction-to-housing thermal resistance of the semiconductor device, the thermal resistance R thja 、R thjc The query may be based on a chip manual or provided by the user.
Step S14: and calculating a voltage value required to be configured by the constant current circuit according to the heating power required by the device to be tested, and configuring the parameters of the constant current circuit according to the voltage value.
In one embodiment, step S14 includes the following steps:
step S141: calculating a voltage value required to be configured by the analog-to-digital converter according to the heating power required by the device to be tested, and configuring the voltage of the analog-to-digital converter according to the voltage value;
step S142: acquiring voltage values at two ends of a tested device and current values flowing through the tested device;
step S143: and adjusting the voltage of the analog-to-digital converter and the current value flowing through the device to be tested to maintain the power of the device to be tested at the required heating power.
In the embodiment of the invention, the power P and the voltage U are calculated DC Corresponding to I DS Current value:
U DC =V DS +I DS xr 3, DUT V required for subsequent electrical parameter testing DS The voltage value is set. Wherein, V DS The voltage clamping circuit, the operational amplifier circuit and the analog-to-digital conversion circuit AD are used for sampling the voltage V of the DUT in real time DS And can display V via oscilloscope OSC DS And (4) waveform. I is DS The current passes through the third resistor R3 to generate a potential difference, and the I of the DUT is sampled in real time through the operational amplifier circuit and the analog-to-digital conversion circuit AD DS The value is obtained.
Then, calculating the U of the DAC required setting output DAC The value:
since the circuit is in a negative feedback amplification mode, U is in the moment DAC Values should be negative. For example, when the required power P is 100W DC At 100V, then I DS The current value of (1A); when R1=10K Ω, R2=1K Ω, and R3=0.1 Ω, U is calculated DAC And (5) keeping the value at-1V. And calculating actual power P of the device under test according to the voltage values at two ends of the device under test and the current value flowing through the device under test DUT . Due to the third resistanceThe power consumption of R3, the required heating power and the actual heating power may have difference, so the output of DAC is adjusted to change I DS Magnitude of current, such that P DUT The power of 100W is maintained, and the purpose of maintaining the test environment is achieved. Alternatively, the power consumption P of the third resistor R3 can be calculated R =I DS ×I DS X R3, i.e. P R =0.1W. Obtaining the actual power P of the tested device DUT =P-P R =99.9W。
Step S15: and switching the semiconductor device electrical parameter testing device to the electrical parameter measuring circuit through the switching circuit to measure the electrical parameters of the device to be tested.
In one embodiment, the measurement system enters the electrical parameter measurement phase when the DUT temperature reaches a set point. Namely, the electronic switch K is controlled to be switched on, the KA contact is controlled to be switched off, the second controllable switch S2 is controlled to be switched off, and the semiconductor device electrical parameter testing device is switched to the electrical parameter measuring circuit shown in fig. 3. When the test is finished, the second controllable switch S2 is turned off.
Specifically, the timing is controlled by synchronization preset by the system, and V DS 、I DS The ADC sampling circuit of (1) can measure electrical parameters of various aspects of the DUT, such as static on-Resistance (RDSON), dynamic on-resistance (DRDSON), and switching time (SWT) parameters, which are important for third generation semiconductor material devices, such as on-delay time (Td on), on-rise time (Tr), off-delay time (Td off), off-fall time (Tf), and other electrical parameters. As shown in FIG. 5, for testing the RDON junction temperatures (T) of the DUT j ) And (3) preparing a test parameter curve from low temperature to high temperature according to time parameters, wherein Rdon is on-state resistance.
According to the method for testing the electrical parameters of the semiconductor device, the test environment can be built and the parameter test program can be completed by switching the working state of the test device, so that the test speed is improved. According to the heating power acquired by the temperature acquisition circuit and calculated by the background system, constant power and stable temperature are provided for the device to be tested, the duty ratio is not required, the temperature rise time of the device to be tested can be effectively reduced, the stable temperature value is maintained, the high-temperature electrical parameter test time in the device production test is shortened, and the test accuracy is improved.
In an embodiment, when the preset test environment is the constant current mode, based on the electrical parameter testing apparatus of the semiconductor device shown in fig. 1, when the electrical parameter test of the semiconductor device is performed, the first controllable switch S1 is first controlled to be turned off, the second controllable switch S2 is first controlled to be turned on, and the V set by the user is used DS The value configures the DC voltage of the programmable power supply, after which the first switch K1 is closed with a delay.
Then according to the I set by the user DS Value calculating DAC needed to set output U DAC Value according to U DAC The value configures the voltage of the analog-to-digital converter. When I is DS And after the value reaches the set value, the measuring system enters an electrical parameter measuring stage. Namely, the electronic switch K is controlled to be switched on, the KA contact is controlled to be switched off, the second controllable switch S2 is controlled to be switched off, and the semiconductor device electrical parameter testing device is switched to the electrical parameter measuring circuit shown in fig. 3. When the test is finished, the second controllable switch S2 is turned off.
In an embodiment, when the preset test environment is the constant power mode, based on the electrical parameter testing apparatus for semiconductor device shown in fig. 1, when the electrical parameter test for semiconductor device is performed, the first controllable switch S1 is first controlled to be turned off, the second controllable switch S2 is first controlled to be turned on, and the V set by the user is used to perform the electrical parameter test for semiconductor device DS The value configures the DC voltage of the programmable power supply, after which the first switch K1 is closed with a delay.
Then, according to the power P value set by the user, the power P voltage U is calculated by the following formula DC Corresponding to I DS Current value:
U DC =V DS +I DS xr 3, DUT V required for subsequent electrical parameter testing DS The voltage value is set. Wherein, V DS The voltage clamping circuit, the operational amplifier circuit and the analog-to-digital conversion circuit AD are used for sampling the V of the DUT in real time DS The value is obtained. I.C. A DS The current passes through the third resistor R3 to generate a potential difference, and the I of the DUT is sampled in real time through the operational amplifier circuit and the analog-to-digital conversion circuit AD DS The value is obtained.
Then, calculating the U of the DAC required setting output DAC The value:
since the circuit is in a negative feedback amplification mode, U is in the moment DAC Values should be negative. For example, when the required power P is 100W DC At 100V, then I DS The current value of (1A); when R1=10K Ω, R2=1K Ω, and R3=0.1 Ω, U is calculated DAC And (5) keeping the value at-1V. The power consumption of the third resistor R3 is P R =I DS ×I DS X R3, i.e. P R =0.1W. So P DUT =P-P R =99.9W, and this power consumption value can be detected and calculated in real time by the system, and thus the output of the DAC can be adjusted to change I DS Magnitude of current, such that P DUT Maintaining a power of 100W.
When P is present DUT And after the set value is reached, the measuring system enters an electrical parameter measuring stage. Namely, the electronic switch K is controlled to be switched on, the KA contact is controlled to be switched off, the second controllable switch S2 is controlled to be switched off, and the semiconductor device electrical parameter testing device is switched to the electrical parameter measuring circuit shown in fig. 3. When the test is finished, the second controllable switch S2 is turned off. By setting a plurality of test modes for the user, the test requirements of the user are greatly met.
An embodiment of the present invention provides a computer device, as shown in fig. 6, the device may include a processor 81 and a memory 82, where the processor 81 and the memory 82 may be connected by a bus or by other means, and fig. 6 takes the connection by the bus as an example.
The memory 82, which is a non-transitory computer-readable storage medium, may be used to store non-transitory software programs, non-transitory computer-executable programs, and modules, such as the corresponding program instructions/modules in the embodiments of the present invention. The processor 81 executes various functional applications and data processing of the processor by executing non-transitory software programs, instructions and modules stored in the memory 82, namely, implements the method for testing electrical parameters of a semiconductor device in the above method embodiments.
The memory 82 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created by the processor 81, and the like. Further, the memory 82 may include high speed random access memory, and may also include non-transitory memory, such as at least one magnetic disk storage device, flash memory device, or other non-transitory solid state storage device. In some embodiments, the memory 82 may optionally include memory located remotely from the processor 81, which may be connected to the processor 81 via a network. Examples of such networks include, but are not limited to, the internet, intranets, mobile communication networks, and combinations thereof.
One or more modules are stored in the memory 82 and, when executed by the processor 81, perform a method for testing electrical parameters of a semiconductor device as in the embodiment shown in fig. 4.
The details of the computer device can be understood by referring to the corresponding descriptions and effects in the embodiments shown in fig. 1 to fig. 5, which are not described herein again.
Those skilled in the art will appreciate that all or part of the processes of the methods of the embodiments described above can be implemented by a computer program, which can be stored in a computer-readable storage medium, and the processes of the embodiments of the methods described above can be included when the computer program is executed. The storage medium may be a magnetic Disk, an optical Disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a Flash Memory (Flash Memory), a Hard Disk (Hard Disk Drive, abbreviated as HDD), a Solid State Drive (SSD), or the like; the storage medium may also comprise a combination of memories of the kind described above.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (12)
1. An electrical parameter testing apparatus for a semiconductor device, comprising: a constant power temperature rise circuit, an electrical parameter measuring circuit and a switching circuit, wherein,
the switching circuit is used for switching on the constant-power temperature rise circuit or the electrical parameter measuring circuit according to an external control instruction;
the constant-power temperature rise circuit is used for providing a preset test environment for the tested device;
the electrical parameter measurement circuit is used for measuring the electrical parameters of the tested device in a preset test environment;
the constant power temperature rise circuit includes: a constant current circuit and a temperature acquisition circuit, wherein,
the temperature acquisition circuit is arranged at a preset position away from the device to be tested, and is used for acquiring the air temperature at the preset position or the shell temperature of the device to be tested and sending the air temperature or the shell temperature to the background system, and the background system calculates the heating power required by the device to be tested according to a node temperature value set by a user, the air temperature or the shell temperature;
the first end of the constant current circuit is connected with the control end of the device to be tested, the second end of the constant current circuit is connected with the second end of the device to be tested, the third end of the constant current circuit is grounded, the constant current circuit is used for providing required heating power for the device to be tested, and the device to be tested works in the amplification area.
2. The semiconductor device electrical parameter testing apparatus of claim 1, wherein the constant current circuit comprises: an analog-to-digital converter, an operational amplifier, a first resistor, a second resistor and a third resistor, wherein,
one end of the analog-to-digital converter is connected with an external control instruction, and the other end of the analog-to-digital converter is respectively connected with the inverting input end of the operational amplifier and one end of the second resistor through the first resistor;
the non-inverting input end of the operational amplifier is grounded, and the output end of the operational amplifier is connected with the control end of the device under test through an electronic switch in the switching circuit;
one end of the third resistor is respectively connected with the other end of the second resistor and the second end of the tested device, and the other end of the third resistor is grounded.
3. The semiconductor device electrical parameter testing apparatus of claim 2, further comprising: a voltage acquisition circuit and a current acquisition circuit, wherein,
the voltage acquisition circuit is connected with the device to be tested in parallel and is used for acquiring voltage values at two ends of the device to be tested;
the current acquisition circuit is connected with the third resistor in parallel and is used for acquiring the value of current flowing through the device under test.
4. The apparatus for testing electrical parameters of a semiconductor device according to claim 1, further comprising: and the power supply circuit is connected with the constant power temperature rise circuit or the electrical parameter measuring circuit in parallel and is used for supplying power to the device to be tested in the constant power temperature rise circuit or the electrical parameter measuring circuit.
5. The electrical parameter testing apparatus of claim 4, wherein said electrical parameter measuring circuit comprises: a drive circuit and a freewheel circuit, wherein,
one end of the driving circuit is connected with an external control signal, and the other end of the driving circuit is connected with the control end of the tested device through an electronic switch in the switching circuit;
one end of the follow current circuit is connected with the anode of the power supply circuit, and the other end of the follow current circuit is connected with the first end of the tested device.
6. The apparatus for testing electrical parameters of a semiconductor device according to claim 5, wherein said driving circuit comprises: a first diode, a first adjustable resistor, a second diode and a second adjustable resistor, wherein,
the anode of the first diode is connected with an external high-level signal, and the cathode of the first diode is connected with the control end of the device under test through the first adjustable resistor and an electronic switch in the switching circuit;
the cathode of the second diode is connected with an external low level signal, and the anode of the second diode is connected with the control end of the tested device through the second adjustable resistor and the electronic switch in the switching circuit.
7. The apparatus of claim 5, wherein the free-wheeling circuit comprises: a third diode and an inductor, wherein,
the cathode of the third diode is respectively connected with one end of the inductor and the anode of the power supply circuit, and the anode of the third diode is respectively connected with the other end of the inductor and the first end of the device to be tested.
8. The apparatus for testing electrical parameters of a semiconductor device according to claim 4, wherein said power supply circuit comprises: a program-controlled power supply, a capacitor set and a first switch, wherein,
the positive pole of the programmable power supply is connected with one end of the capacitor bank through the first switch, and the negative pole of the programmable power supply is connected with the other end of the capacitor bank and then grounded.
9. A semiconductor device electrical parameter testing method for use in the semiconductor device electrical parameter testing apparatus of any one of claims 1 to 8, the semiconductor device electrical parameter testing method comprising:
the semiconductor device electrical parameter testing device is switched to the constant-power temperature rise circuit through the switching circuit;
acquiring a node temperature value set by a user, and acquiring the air temperature away from a preset position of a tested device or the shell temperature of the tested device;
sending the air temperature or the shell temperature and the node temperature value to a background system, and acquiring the heating power required by the tested device calculated by the background system;
calculating a voltage value required to be configured by the constant current circuit according to the heating power required by the device to be tested, and configuring parameters of the constant current circuit according to the voltage value;
and switching the semiconductor device electrical parameter testing device to an electrical parameter measuring circuit through a switching circuit to measure the electrical parameters of the device under test.
10. The method for testing the electrical parameters of the semiconductor device according to claim 9, wherein the step of calculating the voltage value required to be configured by the constant current circuit according to the heating power required by the device under test, and configuring the parameters of the constant current circuit according to the voltage value comprises the following steps:
calculating a voltage value required to be configured by an analog-to-digital converter according to the heating power required by the device to be tested, and configuring the voltage of the analog-to-digital converter according to the voltage value;
acquiring voltage values at two ends of the device to be tested and current values flowing through the device to be tested;
and adjusting the voltage of the analog-to-digital converter and the current value flowing through the device under test to maintain the power of the device under test at the required heating power.
11. A computer-readable storage medium storing computer instructions for causing a computer to perform the method for electrical parameter testing of semiconductor devices of any of claims 9-10.
12. A computer device, comprising: a memory and a processor, the memory and the processor being communicatively connected to each other, the memory storing computer instructions, the processor executing the computer instructions to perform the method for testing electrical parameters of a semiconductor device according to any one of claims 9to 10.
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