CN114740323B - GaN device junction temperature and thermal resistance monitoring circuit and method - Google Patents
GaN device junction temperature and thermal resistance monitoring circuit and method Download PDFInfo
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- 238000012544 monitoring process Methods 0.000 title claims abstract description 64
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- 239000008186 active pharmaceutical agent Substances 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000011982 device technology Methods 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Abstract
A GaN device junction temperature and thermal resistance monitoring circuit and method, comprising: the microprocessor is used for controlling the on and off of the GaN device, collecting the drain current I DS of the GaN device and calculating the junction temperature of the device; the constant current source monitoring circuit is used for controlling the switch of the GaN device according to the signal of the microprocessor and providing constant gate current for the GaN device when the constant current source monitoring circuit is turned on; a thermocouple mounted on the shell of the GaN device for measuring the shell temperature of the GaN device; and the voltage source is used for applying voltage to the GaN device between the drain electrode and the source electrode of the GaN device so that the GaN device works in the active area. According to the GaN device junction temperature and thermal resistance monitoring circuit and method, the device junction temperature can be obtained under the condition that the GaN device junction temperature is not disassembled, and meanwhile, the thermal resistance of the GaN device can be conveniently and accurately monitored; has the advantages of convenience and simplicity.
Description
Technical Field
The invention relates to the technical field of GaN device monitoring, in particular to a GaN device junction temperature and thermal resistance monitoring circuit and method.
Background
The power electronic device has higher energy conversion efficiency and better control capability, is widely applied to the fields of new energy power generation, traffic traction, aerospace and the like, the semiconductor device is a core component part of the power electronic device and is the weakest part in the power electronic device, and the power semiconductor device has an important influence on the reliability of the power electronic device, so that the reliability of the power electronic device is improved, and the stricter safety and cost requirements are met. The GaN material is used as a third-generation semiconductor material, has the advantages of large forbidden bandwidth, high breakdown electric field intensity, high electron saturation drift speed, high heat conductivity and the like, and the GaN device manufactured by using the GaN material has the advantages of high voltage withstand capability, small on-resistance, high switching speed and high switching frequency, and is incomparable with Si devices. In a word, the GaN-based power electronic device technology is a strategic high-new technology, has extremely important value for the military and civil fields, is intensively researched by a plurality of semiconductor companies and research institutions at home and abroad, and develops a series of GaN devices applied to occasions such as intelligent power supplies, vehicle-mounted inverters and the like. The connection between the GaN chip and the device substrate and the base is realized through solder connection, but the GaN device becomes one of devices which are easy to age and damage in a power electronic device due to complex and severe working conditions and alternating thermal-mechanical stress. The aging of the solder layer can obviously influence the thermal resistance of the device, and the state monitoring of the defect of the solder layer of the GaN device can be realized by monitoring the change of the thermal resistance.
The existing method for monitoring the thermal resistance of the semiconductor device mainly comprises non-electric quantity monitoring and electric quantity monitoring. Among them, the most commonly used non-electrical quantity monitoring is the infrared thermal imaging method, but the method has high use cost, complex instrument and can cause unrecoverable damage to the device. And the current electrical quantity monitoring for the junction temperature of the GaN device is very little. The traditional electrical quantity monitoring for the junction temperature of the silicon-based device is not proved to be applicable to the junction temperature monitoring of the GaN device.
Disclosure of Invention
In order to solve the technical problems, the invention provides the GaN device junction temperature and thermal resistance monitoring circuit and the GaN device junction temperature and thermal resistance monitoring method, so that the junction temperature of the GaN device can be obtained under the condition that the GaN device junction temperature is not disassembled, and meanwhile, the thermal resistance of the GaN device can be conveniently and accurately monitored; has the advantages of convenience and simplicity.
The technical scheme adopted by the invention is as follows:
A GaN device junction temperature and thermal resistance monitoring circuit comprising:
The microprocessor is used for controlling the on and off of the GaN device, collecting the drain current I DS of the GaN device and calculating the junction temperature of the device;
the constant current source monitoring circuit is used for controlling the switch of the GaN device according to the signal of the microprocessor and providing constant gate current for the GaN device when the constant current source monitoring circuit is turned on;
a thermocouple mounted on the shell of the GaN device for measuring the shell temperature of the GaN device;
and the voltage source is used for applying voltage to the GaN device between the drain electrode and the source electrode of the GaN device so that the GaN device works in the active area.
The constant current source monitoring circuit includes: operational amplifiers A1, A2, A3, resistors R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, and capacitor C1;
One end of the resistor R1 is connected with the end of the reference voltage U ref, the other end of the resistor R1 is connected with the inverting input end of the operational amplifier A1,
One end of the resistor R2 is connected with the inverting input end of the operational amplifier A1, and the other end of the resistor R2 is connected with the output end of the operational amplifier A1;
one end of the resistor R3 is connected with a feedback signal end of the operational amplifier A3, and the other end of the resistor R3 is connected with a non-inverting input end of the operational amplifier A1;
One end of the resistor R4 is connected with the non-inverting input end of the operational amplifier A1, and the other end of the resistor R4 is connected with the grounding end;
one end of the resistor R5 is connected with the output end of the operational amplifier A1, and the other end of the resistor R5 is connected with the inverting input end of the operational amplifier A2;
One end of the capacitor C1 is connected with the inverting input end of the operational amplifier A2, and the other end of the capacitor C1 is connected with the output end of the operational amplifier A2;
One end of the resistor R12 is connected with the inverting input end of the operational amplifier A2, and the other end of the resistor R12 is connected with the output end of the operational amplifier A2;
one end of the resistor R11 is connected with the non-inverting input end of the operational amplifier A2, and the other end of the resistor R11 is connected with the grounding end;
One end of the resistor R6 is connected with the output end of the operational amplifier A2, and the other end of the resistor R6 is connected with the gate electrode of the GaN device;
One end of a resistor R7 is connected with one end of a resistor R6, and the other end of the resistor R7 is connected with the inverting input end of the operational amplifier A3;
One end of the resistor R8 is connected with the other end of the resistor R6, and the other end of the resistor R8 is connected with the non-inverting input end of the operational amplifier A3;
One end of the resistor R9 is connected with the inverting input end of the operational amplifier A3, and the other end of the resistor R9 is connected with the feedback signal end of the operational amplifier A3;
One end of the resistor R10 is connected with the non-inverting input end of the operational amplifier A3, and the other end of the resistor R10 is connected with the grounding end.
A method for monitoring junction temperature of GaN device includes enabling GaN device to work in active region, applying constant gate current and drain-source voltage, collecting drain current of GaN device, and realizing junction temperature monitoring indirectly by combining K curve.
A thermal resistance monitoring method of GaN device is based on junction temperature monitoring, when the GaN device to be tested reaches thermal steady state, the shell temperature is measured by a thermocouple arranged on the shell of the GaN device, and then the thermal resistance is obtained by a thermal resistance formula under steady state condition.
A method for monitoring junction temperature and thermal resistance of GaN device includes heating GaN device to specified temperature on constant temperature heating table, applying constant drain-source voltage to make it work in active region after reaching thermal steady state to obtain multiple groups of given junction temperature and corresponding drain current I DS, fitting K curve describing relationship between junction temperature T j and drain current I DS by using these data groups.
The constant current source monitoring circuit provides constant gate current, the GaN device works in an active area, constant voltage V DS is applied between a drain electrode and a source electrode, the microprocessor collects drain current I DS of the GaN device, and junction temperature T j can be calculated by combining a previously fitted K curve;
a thermocouple mounted on the GaN device package measures GaN device package temperature T c.
The applied drain-source voltage V DS is known to give the power applied to the GaN device;
Finally, the thermal resistance value under the corresponding condition can be obtained by utilizing a thermal resistance R thjc calculation formula.
Wherein: t c is the device case temperature, and P H is the applied power between the drain and the source of the device.
The invention relates to a GaN device junction temperature and thermal resistance monitoring circuit and a method, which have the following technical effects:
1) The junction temperature of the GaN device is monitored, the thermal resistance of the device is monitored, the potential of real-time on-line monitoring is realized, meanwhile, the integration level of the monitoring circuit is high, and the monitoring method is easy to implement.
2) The method utilizes the device to work in an active area, and the drain current I DS can monitor the junction temperature of the device and can be used for monitoring the steady-state thermal resistance of the device under the constant gate current. The method can measure the thermal characteristics of the device without disassembling the device, and realizes the evaluation of the thermal characteristics of the GaN device and the GaN system.
Drawings
FIG. 1 is a flow chart of a method for monitoring thermal resistance of a GaN device of the invention.
FIG. 2 is a circuit diagram of constant current source monitoring of the monitoring circuit of thermal resistance of the GaN device of the invention.
Fig. 3 is a general schematic diagram of a circuit for monitoring thermal resistance of a GaN device of the invention.
FIG. 4 (1) is a graph I of the K curve of the relationship between the junction temperature T j and the drain current I DS;
Fig. 4 (2) is a second graph of K curve of the relationship between junction temperature T j and drain current I DS.
Detailed Description
As shown in fig. 1, a GaN device junction temperature and thermal resistance monitoring circuit includes:
The microprocessor is used for controlling the on and off of the GaN device, collecting the drain current I DS of the GaN device and calculating the junction temperature of the device;
the constant current source monitoring circuit is used for controlling the switch of the GaN device according to the signal of the microprocessor and providing constant gate current for the GaN device when the constant current source monitoring circuit is turned on;
a thermocouple mounted on the shell of the GaN device for measuring the shell temperature of the GaN device;
and the voltage source is used for applying voltage to the GaN device between the drain electrode and the source electrode of the GaN device so that the GaN device works in the active area.
The microprocessor may be a DSP from TI.
The voltage source can be GPS-3303C type direct current stabilized voltage supply of GWINSTEK company.
The constant current source in the constant current source monitoring circuit refers to a constant current supplied to the gate of the device and can be generated by the negative feedback circuit shown in fig. 2.
As shown in fig. 2, the constant current source monitoring circuit includes: operational amplifiers A1, A2, A3, resistors R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, and capacitor C1. One end of the resistor R1 is connected with the reference voltage U ref end, and the other end of the resistor R1 is connected with the inverting input end of the operational amplifier A1; one end of the resistor R2 is connected with the inverting input end of the operational amplifier A1, and the other end of the resistor R2 is connected with the output end of the operational amplifier A1; one end of the resistor R3 is connected with a feedback signal end of the operational amplifier A3, and the other end of the resistor R3 is connected with a non-inverting input end of the operational amplifier A1; one end of the resistor R4 is connected with the non-inverting input end of the operational amplifier A1, and the other end of the resistor R4 is connected with the grounding end; one end of the resistor R5 is connected with the output end of the operational amplifier A1, and the other end of the resistor R5 is connected with the inverting input end of the operational amplifier A2; one end of the capacitor C1 is connected with the inverting input end of the operational amplifier A2, and the other end of the capacitor C1 is connected with the output end of the operational amplifier A2; one end of the resistor R12 is connected with the inverting input end of the operational amplifier A2, and the other end of the resistor R12 is connected with the output end of the operational amplifier A2; one end of the resistor R11 is connected with the non-inverting input end of the operational amplifier A2, and the other end of the resistor R11 is connected with the grounding end; one end of the resistor R6 is connected with the output end of the operational amplifier A2, and the other end of the resistor R6 is connected with the gate electrode of the GaN device; one end of a resistor R7 is connected with one end of a resistor R6, and the other end of the resistor R7 is connected with the inverting input end of the operational amplifier A3; one end of the resistor R8 is connected with the other end of the resistor R6, and the other end of the resistor R8 is connected with the non-inverting input end of the operational amplifier A3; one end of the resistor R9 is connected with the inverting input end of the operational amplifier A3, and the other end of the resistor R9 is connected with the feedback signal end of the operational amplifier A3; one end of the resistor R10 is connected with the non-inverting input end of the operational amplifier A3, and the other end of the resistor R10 is connected with the grounding end.
A method for monitoring junction temperature of GaN device includes enabling GaN device to work in active region, applying constant gate current and drain-source voltage, collecting drain current of GaN device, and realizing junction temperature monitoring indirectly by combining K curve.
A thermal resistance monitoring method of GaN device is based on junction temperature monitoring, when the GaN device to be tested reaches thermal steady state, the shell temperature is measured by a thermocouple arranged on the shell of the GaN device, and then the thermal resistance is obtained by a thermal resistance formula under steady state condition.
The junction temperature is determined by searching the relation between the junction temperature and the drain current, a GaN device is placed on a constant temperature table for heating, when the GaN device is heated to a given temperature and is in thermal balance, a grid driving signal and drain-source voltage are applied to the GaN device, and the drain current at the temperature is measured; repeating the measuring process for a plurality of times to obtain a plurality of groups of junction temperatures and data groups corresponding to drain currents; using these data sets, a K curve describing junction temperature versus drain current can be fitted. As shown in fig. 4 (2), the gate-source voltage V GS is 6V, the drain-source voltage V DS is 4V, the device is controlled by the heating table to reach thermal steady state, a plurality of junction temperatures are measured, the drain-source currents I DS in fig. 4 (2) at 25 ℃, 50 ℃, 75 ℃, 100 ℃, 125 ℃ and 150 ℃ are respectively about 180A, 160A, 140A, 120A, 100A and 80A in steady state, and K curves are made according to the sets of test data. The current involved in the schematic diagram 4 (2) is very large, and in actual measurement, a proper K curve can be obtained by adjusting the gate-source voltage V GS of the device to be the drain-source voltage V DS according to the requirement.
In the subsequent monitoring process, the corresponding junction temperature can be obtained according to the K curve as long as the drain current of the GaN device is measured. As can be seen from the K curve schematic diagram in fig. 4 (1), there is a better linear relationship between the junction temperature and the drain current, and a functional relationship between the junction temperature and the drain current can be obtained from the curve. Once the functional relation exists, the junction temperature of the device at the moment can be calculated by substituting any measured drain current value into the relation.
A method for monitoring thermal resistance of a GaN device adopts the monitoring circuit for junction temperature of the GaN device, and comprises the following steps:
step 1) the microprocessor sends out a control signal to conduct the GaN device, and the constant current source monitoring circuit provides constant gate current for the GaN device.
Step 2) applying constant voltage to the drain-source electrode of the GaN device by the voltage source, measuring drain current I DS and drain-source voltage V DS of the GaN device after the GaN device reaches a thermal steady state, and calculating junction temperature T j by using a K curve; the thermocouple on the GaN device package measures the device package temperature T c.
And 3) calculating the thermal resistance by using a thermal resistance calculation formula according to the junction temperature, the shell temperature and the applied power.
When the voltage between the drain and the source is changed, the drain current is also changed, and the junction temperature and the shell temperature of the GaN device are both changed to a certain extent, so that the thermal resistance is changed.
Claims (4)
1. A GaN device junction temperature and thermal resistance monitoring circuit characterized by comprising:
The microprocessor is used for controlling the on and off of the GaN device, collecting the drain current I DS of the GaN device and calculating the junction temperature of the device;
the constant current source monitoring circuit is used for controlling the switch of the GaN device according to the signal of the microprocessor and providing constant gate current for the GaN device when the constant current source monitoring circuit is turned on;
a thermocouple mounted on the shell of the GaN device for measuring the shell temperature of the GaN device;
the voltage source is used for applying voltage to the GaN device between the drain electrode and the source electrode of the GaN device so that the GaN device works in the active area;
The constant current source monitoring circuit includes: operational amplifiers A1, A2, A3, resistors R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, and capacitor C1;
One end of the resistor R1 is connected with the end of the reference voltage U ref, the other end of the resistor R1 is connected with the inverting input end of the operational amplifier A1,
One end of the resistor R2 is connected with the inverting input end of the operational amplifier A1, and the other end of the resistor R2 is connected with the output end of the operational amplifier A1;
one end of the resistor R3 is connected with a feedback signal end of the operational amplifier A3, and the other end of the resistor R3 is connected with a non-inverting input end of the operational amplifier A1;
One end of the resistor R4 is connected with the non-inverting input end of the operational amplifier A1, and the other end of the resistor R4 is connected with the grounding end;
one end of the resistor R5 is connected with the output end of the operational amplifier A1, and the other end of the resistor R5 is connected with the inverting input end of the operational amplifier A2;
One end of the capacitor C1 is connected with the inverting input end of the operational amplifier A2, and the other end of the capacitor C1 is connected with the output end of the operational amplifier A2;
One end of the resistor R12 is connected with the inverting input end of the operational amplifier A2, and the other end of the resistor R12 is connected with the output end of the operational amplifier A2;
one end of the resistor R11 is connected with the non-inverting input end of the operational amplifier A2, and the other end of the resistor R11 is connected with the grounding end;
One end of the resistor R6 is connected with the output end of the operational amplifier A2, and the other end of the resistor R6 is connected with the gate electrode of the GaN device;
One end of a resistor R7 is connected with one end of a resistor R6, and the other end of the resistor R7 is connected with the inverting input end of the operational amplifier A3;
One end of the resistor R8 is connected with the other end of the resistor R6, and the other end of the resistor R8 is connected with the non-inverting input end of the operational amplifier A3;
One end of the resistor R9 is connected with the inverting input end of the operational amplifier A3, and the other end of the resistor R9 is connected with the feedback signal end of the operational amplifier A3;
One end of the resistor R10 is connected with the non-inverting input end of the operational amplifier A3, and the other end of the resistor R10 is connected with the grounding end.
2. The method for monitoring junction temperature of GaN device by using the monitoring circuit according to claim 1, wherein: firstly, a GaN device is enabled to work in an active area, then constant gate current and drain-source voltage are applied, finally drain current of the GaN device is collected, and junction temperature monitoring is indirectly achieved by combining a K curve.
3. The method for monitoring thermal resistance of the GaN device by adopting the junction temperature monitoring method according to claim 2, wherein the method comprises the following steps: on the basis of junction temperature monitoring, when the GaN device to be tested reaches a thermal steady state, the shell temperature is measured through a thermocouple arranged on the GaN device shell, and then the thermal resistance is obtained through a thermal resistance formula under the steady state condition.
4. The method for monitoring junction temperature and thermal resistance of the GaN device by adopting the monitoring circuit according to claim 1, wherein the method comprises the following steps:
Firstly heating a GaN device on a constant-temperature heating table to a specified temperature, applying constant drain-source voltage to enable the GaN device to work in an active region after reaching a thermal steady state, obtaining a plurality of groups of given junction temperatures and corresponding drain currents I DS, and fitting a K curve describing the relation between the junction temperatures T j and the drain currents I DS by utilizing the data groups;
The constant current source monitoring circuit provides constant gate current, the GaN device works in an active area, constant voltage V DS is applied between a drain electrode and a source electrode, the microprocessor collects drain current I DS of the GaN device, and junction temperature T j can be calculated by combining a previously fitted K curve;
A thermocouple arranged on the GaN device tube shell measures the GaN device tube temperature T c;
The applied drain-source voltage V DS is known to give the power applied to the GaN device;
Finally, the thermal resistance value under the corresponding condition can be obtained by utilizing a thermal resistance R thjc calculation formula;
。
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| CN111257718A (en) * | 2020-03-05 | 2020-06-09 | 中国电子技术标准化研究院 | Device and method for measuring thermal resistance of MOSFET power module |
| CN112232008A (en) * | 2020-10-15 | 2021-01-15 | 三峡大学 | Description model of intrinsic characteristic parameters of MOSFET (Metal-oxide-semiconductor field Effect transistor) device and parameter identification method |
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| CN112232008A (en) * | 2020-10-15 | 2021-01-15 | 三峡大学 | Description model of intrinsic characteristic parameters of MOSFET (Metal-oxide-semiconductor field Effect transistor) device and parameter identification method |
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