CN111968688A - Intelligent data storage system based on piezoelectric sensor-memristor - Google Patents
Intelligent data storage system based on piezoelectric sensor-memristor Download PDFInfo
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- 238000013500 data storage Methods 0.000 title claims abstract description 26
- 238000010248 power generation Methods 0.000 claims abstract description 37
- 238000003860 storage Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 25
- 238000003825 pressing Methods 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 3
- 229910002056 binary alloy Inorganic materials 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910001093 Zr alloy Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 16
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 12
- 229910001195 gallium oxide Inorganic materials 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 241000282414 Homo sapiens Species 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000013473 artificial intelligence Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 210000000225 synapse Anatomy 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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Abstract
The invention discloses an intelligent data storage system based on a piezoelectric sensor-memristor, which integrates the piezoelectric sensor and the memristor to convert a pressure signal into an electrical signal so as to drive the memristor to complete the recording and storage of data. And a protection circuit is designed at an output port of the pressure power generation sheet, so that an external mechanical signal cannot break down the memristor. When the intelligent data storage system works, no external voltage is needed no matter recording, conversion or erasing. The piezoelectric sensor and the memristor are creatively integrated into an intelligent data storage system, the piezoelectric sensor and the memristor are combined to form primary application, and after multiple tests, the system has high stability, can adapt to various environments, and has wide application prospect.
Description
Technical Field
The invention relates to the field of nano material application and the technical field of microelectronics, in particular to an intelligent data storage system based on a piezoelectric sensor/memristor.
Background
As a technical science of the rapid development in recent years, artificial intelligence has changed human lives at an unprecedented rate. Compared with human beings, the artificial intelligence device has better operation speed, storage space, reliability and durability, and the artificial intelligence gradually enters the aspects of human life.
Today's society is a fast growing society and the demand for data storage is growing rapidly. Handling large amounts of information places higher demands on the performance of existing storage devices. Currently, the mainstream nonvolatile memory technology on the market gradually encounters the development bottleneck in the aspects of size, power consumption, reliability and the like. The concept of memristors was first proposed by professor zeiss, a chinese scientist in 1971 who concluded that there should be an element in addition to the resistor, capacitor and inductor that represents the relationship between charge and magnetic flux. Until 2008, researchers in hewlett packard company made nano memristive devices for the first time, and lifted up the research heat tide of memristors. The appearance of the nanometer memristor is expected to realize a nonvolatile random access memory.
Memristors, all known as memristors (memristors). Which is a circuit device that represents the relationship of magnetic flux to electrical charge. The memristor has a relation with both memory and resistance, the resistance value of the memristor changes along with the change of the passing current quantity, and even if the circuit is powered off and the current stops, the resistance value of the memristor is still kept until reverse current passes through the memristor and returns to the original state. The resistance value can be changed by controlling the change of the current, if the high resistance value (HRS) is defined as '1' and the low resistance value (LRS) is defined as '0', the function of storing data can be realized by reversible conversion between the High Resistance State (HRS) and the Low Resistance State (LRS). In addition, parameters such as the size, the power consumption, the erasing speed, the repeated erasing times and the like of the random access memory based on the memristor are superior to those of the traditional random access memory. The memristor can realize the simulation of synapses of the artificial neural network, so that the memristor is widely applied to the direction of artificial intelligence.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an intelligent data storage system based on a piezoelectric sensor-memristor.
The technical purpose of the invention is realized by the following technical scheme.
The intelligent data storage system based on the piezoelectric sensor and the memristor is integrated by adopting the piezoelectric sensor and the memristor, a pressure power generation piece and an external circuit form the piezoelectric sensor, the resistance value of the memristor is changed by a pressure applying method, and therefore data recording and storage are completed.
A pressing area (a central area of the pressure power generation piece) of the pressure power generation piece is connected with a lower electrode of the memristor through a lead, and is respectively connected with one end of the first resistor and one end of the second resistor through leads; the non-pressing area (the area around the pressure generating piece) of the pressure generating piece is respectively connected with the upper electrode and the lower electrode of the memristor through leads, and the other end of the first resistor is connected to the lead between the non-pressing area of the pressure generating piece and the lower electrode of the memristor; the other end of the second resistor is connected with the base electrode of the triode, the collector electrode of the triode is connected to a lead between the non-pressing area of the pressure power generation sheet and the lower electrode of the memristor, the emitting electrode of the triode is connected with one end of the inductor, and the other end of the inductor is connected with the upper electrode of the memristor.
And the emitter of the triode is connected with one end of the inductor and is connected with the ground.
When data needs to be written, an erasing line is disconnected with a writing line (namely, a pressing area and a non-pressing area of a pressure power generation sheet are not connected with an upper electrode and a lower electrode of a memristor), the pressure power generation sheet is pressed, an electric signal passes through the writing line, the pressure power generation sheet is connected with the lower electrode of the memristor, an inductor is connected with the upper electrode of the memristor, and due to the effect of the output voltage of the pressure power generation sheet, a resistance change memory of a gallium oxide film connected with the pressure power generation sheet forms a conductive filament to obtain low resistance and large current which are regarded as data of 0; when erasing is carried out, a writing line is disconnected (namely, an inductor is disconnected with an upper electrode, a non-pressing area is disconnected with a lower electrode), an erasing line is connected, pressure is applied to a pressure power generation piece, an electric signal passes through the erasing line, the pressing area and the non-pressing area of the pressure power generation piece are respectively connected with a lower electrode and an upper electrode of a memristor, a conductive gap potential is not formed, a high resistance value and a small current are obtained and are regarded as data '1', namely, the alternating switching of data '0' and '1' in a binary system can be realized through the action of two electric signal lines, and the storage and the erasing aiming at the data are completed.
The memristor is formed by sequentially superposing a lower electrode, a resistance change layer and an upper electrode from bottom to top, wherein:
the thickness of the lower electrode is 50-200nm, the thickness of the resistance change layer is 10-100nm, and the thickness of the upper electrode is 50-200 nm.
The lower electrode is one of conductive metal, metal alloy, conductive metal compound or other conductive materials.
The upper electrode is one of a conductive metal, metal alloy, conductive metal compound, or other conductive material.
The conductive metal is one of Ta, Cu, Ag, W, Ni, Al or Pt; the metal alloy is one of Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Cu/Al or Al/Zr alloy; the conductive metal compound is TiN or ITO; other conductive materials such as AZO, FTO, graphene or one of nano silver wires.
The preparation method of the upper electrode and the lower electrode can select any one of a magnetron sputtering method, an ion beam sputtering method, a chemical vapor deposition method, an electron beam evaporation deposition method or an atomic layer deposition method.
The resistance change layer is Ga2O3For the preparation of the resistance change layer, the thin film may be formed by any one of a pulsed laser deposition method, a reaction thermal evaporation method, a spray thermal decomposition method, a radio frequency magnetron sputtering method, an electron beam evaporation method, a chemical vapor deposition method, and a Metal Organic Chemical Vapor Deposition (MOCVD) method.
Each electrode in the memristor is made by a magnetron sputtering method and is based on Ga2O3The preparation method of the resistive random access memory of the film is prepared by adopting a magnetron sputtering method and comprises the following steps:
in step 1, the silicon substrate is cleaned by an ultrasonic instrument, for example, the silicon substrate (silicon wafer) is placed in the ultrasonic instrument and sequentially and respectively treated with acetone, absolute ethyl alcohol and deionized water for 15 min.
In step 1, when a titanium dioxide layer is arranged on a silicon substrate by using a magnetron sputtering method, the magnetron sputtering vacuum degree is less than 10-4Pa, the temperature of the silicon substrate is 20-2 of room temperature5 ℃, the working pressure of 0.3-1 Pa and the sputtering power of 30-100W.
in step 2, the vacuum degree of magnetron sputtering is less than 10-4Pa, the temperature of the substrate is 20-25 ℃, the working pressure is 0.3-1 Pa, the sputtering power is 30-100W, inert protective gas is introduced, the gas flow is 10-60 sccm, and the time is 5-60 min.
in step 3, the vacuum degree of magnetron sputtering is less than 10-4Pa, the temperature of the substrate is room temperature, the working pressure is 0.3-1 Pa, the sputtering power is 30-80W, inert protective gas is introduced, the gas flow is 10-60 sccm, and the time is 5-20 min.
In step 3, the material of the resistance change layer is a gallium oxide ceramic target.
And 4, arranging an upper electrode on the resistance change layer by using a magnetron sputtering method, namely arranging a material serving as the upper electrode on a target platform as a target material, and carrying out magnetron sputtering on the resistance change layer.
In step 4, the vacuum degree of magnetron sputtering is less than 10-4Pa, the temperature of the substrate is 20-25 ℃, the working pressure is 0.3-1 Pa, the sputtering power is 30-100W, and the flow of introducing inert protective gas is 10-60 sccm for 10-60 min.
During the preparation process, the target material in the corresponding step is prepared by adopting a solid-phase synthesis method, and the inert protective gas is argon, nitrogen or helium.
In the present invention, Ga2O3As a binary oxide, the band gap is wider
Is considered to be one of the ideal candidate materials of the resistance change medium layer because of the inherent propertyThe high resistance characteristic and the conductivity which is very sensitive to oxygen show the application in the intelligent data storage system based on the piezoelectric sensor-memristor. In the selection of electrode materials, except for the use of conventional conductive metals, conductive alloys, conductive compounds such as: cu and Ag; Cu/Ti, Cu/Al; besides TiN, some conductive materials such as graphene and nano silver wires are adopted, and by introducing the materials, a better conductive effect and smaller conductive contact can be obtained. In the present invention Ga2O3The Ta-based resistive random access memory is used as a dielectric material of the resistive random access memory, Ta is used as an upper electrode, the cycle characteristic and the stability of the device are greatly improved, and a new direction is provided for high-density and large-scale integration of the resistive random access memory.
In the invention, the memristor is a device capable of changing the resistance value by changing the applied voltage, and the data conversion can be completed by switching the high-resistance state and the low-resistance state. The output port of the piezoelectric sensor is connected with the electrode of the memristor through a copper wire, and therefore the intelligent data can be stored. The recording system of the invention needs to be integrated with a memristor by a pressure generating piece and a protection circuit thereof. The pressure generating sheet is a device capable of converting mechanical signals into electrical signals, and different voltage value signals can be output by applying different pressures. It should be noted that a corresponding protection circuit should be provided at the output port of the pressure power generation sheet to ensure that the maximum output voltage generated by the pressure power generation sheet does not break down the memristive device.
Compared with the prior art, the piezoelectric sensor and the memristor are innovatively integrated, and not only can the signal be detected, but also the signal can be recorded in the system. The recorded signal does not disappear with the cessation or removal of the mechanical signal nor with the disappearance of the power supply, i.e. the recording is permanent, i.e. it can be maintained without electrical erasure. When interconnecting wires are reversed, changes may be made to the data. In addition, an external voltage signal is not required to be applied in the process, and the self-driving effect can be achieved simply through a mechanical signal. The system really realizes the functions of detecting, memorizing and the like of pressure, can be widely applied to regions where human beings such as deep sea, high altitude, space and the like are difficult to exist for a long time, and provides a wider direction for future scientific research career.
Drawings
Fig. 1 is a basic circuit diagram of a piezoelectric sensor.
Fig. 2 is a graph of voltage signal versus time.
FIG. 3 is a graph of voltage signal versus mechanical signal.
FIG. 4 is a schematic diagram of an intelligent piezoelectric sensor/memristor-based data storage system.
FIG. 5 is a graph of current-voltage characteristics of an oxide memristor.
Detailed Description
The technical solution of the present invention is further described below with reference to specific embodiments, and an intelligent data storage system based on a piezoelectric sensor/memristor is described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the basic circuit diagram of the piezoelectric sensor is designed with an additional external circuit through components such as a resistor, an inductor, a triode and the like. In the process of testing the pressure power generation sheet, the electrical signal converted from the mechanical signal cannot play any role under the condition of directly externally connecting a load. The research shows that only voltage exists due to the large leakage current of the pressure generating sheet. Sufficient current must be available to access the load if necessary, and therefore the external circuit is designed to reduce its leakage current.
The pressure power generation sheet shown in figure 1 and its external circuit (available from Taobao-network)Yibo pottery electric group) Piezoelectric ceramic power generation module, output voltage: 15v DC max, maximum output current: 5mA, resonance impedance: < 105oHm, static capacitance: 68-83 nF, substrate material: brass # CW617N, copper sheet thickness: 0.26mm, piezoelectric ceramic thickness: 0.30 mm; p5-5, Kt 0.48, eT33 2600, Qm 90, Kp 0.61, D33>580x10-12C/N, where Kt33 is 3600, a transistor T is used to amplify the current, and resistors R1 and R2 are used to determine the quiescent operating point of the triode amplifier circuit (e.g., 75 k Ω for R1 and 10 k Ω for R2) to ensure the triode is operated at a constant voltageCan be used normally. The inductance L functions to supply a large number of electrons. The working principle of the whole circuit is as follows: the weak current in the pressure power generation sheet passes through the inductor L to provide initial current for the inductor L. In the oscillating process of the inductor, the inductor L provides a large amount of electrons for the triode amplifying circuit, the current passing through the triode is amplified, the current required by normal work of the memristor is finally provided for the memristor, and the problem that the pressure power generation piece is large in leakage current can be successfully solved.
In the process of circuit design, the positive pole of the pressing part of the pressure generating piece is led out to be respectively connected with the resistor R1 and the resistor R2 and connected to the base electrode of the triode. The triode emitter is connected to an inductor L (considered to be connected to ground after connection). It should be noted that the above functions can be realized by changing parameters of components such as resistors, capacitors, triodes and the like in the circuit, so that the maximum output voltage of the piezoelectric sheet passing through the circuit is ensured not to exceed the breakdown voltage of the memristive device, and the failure of the components is avoided.
The device shown in fig. 1 (i.e., the pressure generating chip) was tested, and fig. 2 is a graph showing the voltage signal as a function of time. The figure is a schematic diagram of voltage signals obtained when a mechanical signal greater than 20000Pa is applied to the piezoelectric sheet for multiple times. The test result shows that the maximum open-circuit output voltage of the pressure power generation sheet is 9.5V, and after the pressure power generation sheet is pressed for many times, the voltage is kept stable without obvious attenuation, and the stability of the pressure power generation sheet is shown. Fig. 3 is a graph of voltage signal versus mechanical signal. At 0-18000Pa, the voltage signal generated increases with increasing pressure. When the pressure value exceeds 18000Pa, the generated voltage signal tends to be stable, the situation that the voltage is infinitely increased along with the increase of the pressure is avoided, and the protection effect on the memristor is achieved.
Fig. 4 is a schematic diagram of an intelligent data storage system based on a piezoelectric sensor/memristor, which is an example of a gallium oxide resistive random access memory, and is made by connecting electrodes of the piezoelectric sensor and the gallium oxide resistive random access memory (i.e., memristor) in fig. 1 by using copper wires. The structure, the preparation method and the basic performance of the gallium oxide resistive random access memory are described in the Chinese invention patent of 'a gallium oxide film-based resistive random access memory and a preparation method thereof', the application number is 2019102712817, and the application date is 2019, 4 and 4 days.
A pressing area (a central area of the pressure power generation piece) of the pressure power generation piece is connected with a lower electrode of the memristor through a lead, and is respectively connected with one end of the first resistor and one end of the second resistor through leads; the non-pressing area (the area around the pressure generating piece) of the pressure generating piece is respectively connected with the upper electrode and the lower electrode of the memristor through leads, and the other end of the first resistor is connected to the lead between the non-pressing area of the pressure generating piece and the lower electrode of the memristor; the other end of the second resistor is connected with the base electrode of the triode, the collector electrode of the triode is connected to a lead between the non-pressing area of the pressure power generation sheet and the lower electrode of the memristor, the emitting electrode of the triode is connected with one end of the inductor and considered to be grounded, and the other end of the inductor is connected with the upper electrode of the memristor.
When data needs to be written, an erasing line is disconnected with a writing line (namely, a pressing area and a non-pressing area of a pressure power generation sheet are not connected with an upper electrode and a lower electrode of a memristor), the pressure power generation sheet is pressed, an electric signal passes through the writing line, the pressure power generation sheet is connected with the lower electrode of the memristor, an inductor is connected with the upper electrode of the memristor, and due to the effect of the output voltage of the pressure power generation sheet, a resistance change memory of a gallium oxide film connected with the pressure power generation sheet forms a conductive filament to obtain low resistance and large current which are regarded as data of 0; when erasing is carried out, a writing line is disconnected (namely, an inductor is disconnected with an upper electrode, a non-pressing area is disconnected with a lower electrode), an erasing line is connected, pressure is applied to a pressure power generation piece, an electric signal passes through the erasing line, the pressing area and the non-pressing area of the pressure power generation piece are respectively connected with a lower electrode and an upper electrode of a memristor, a conductive filament is not formed, a high resistance value and a small current are obtained and are regarded as data '1', namely, the alternating switching of data '0' and '1' in a binary system can be realized through the action of two electric signal lines, and the storage and the erasing aiming at the data are completed.
FIG. 5 is a graph of current-voltage characteristics of an oxide memristor. Taking a gallium oxide resistive random access memory as an example, electrical testing of the gallium oxide resistive random access memory by using an agilent B1500 semiconductor parameter analyzer should have the following characteristics, as shown in fig. 5. The curve line 1 is a complete working image of the gallium oxide resistance change memory, and can judge that the device can normally work, the turn-on voltage of the device is about 0.6V (namely about 0.6V), and then 0.5V is selected as the detection voltage. After the electrical signals of the gallium oxide resistance change memory are completely detected once, the copper wire is connected to the electrode of the gallium oxide resistance change memory in the form of a writing wire in the attached drawing 4, at this time, an electrical test curve 2 in the attached drawing 5 is obtained, and it can be seen that the device has low resistance value and large current, which represents data of 0. Then, the copper wire is connected to the position shown by the erasing wire in the figure 4, and the copper wire is electrically tested after being pressed, so that an electrical test curve 3 in the figure 5 can be obtained, at the moment, data is erased, and the device has high resistance and low current and is regarded as data 1.
The device can finish data storage through the memristor, always records the state of data, and cannot disappear due to disappearance of mechanical signals. Even when no external bias voltage is provided, the copper wire is arranged at the output port of the pressure power generation sheet, namely, the state of data can be changed through mechanical signals acting on the piezoelectric sensor, and therefore the intelligent data storage system based on the piezoelectric sensor/memristor is realized.
According to the invention, the adjustment of the preparation process parameters and the parameters of the electronic components can be realized in the functions of the intelligent data storage system of the piezoelectric sensor/memristor, and the performance basically consistent with the embodiment is shown. The invention has been described in an illustrative manner, and it is to be understood that any simple variations, modifications or other equivalent changes which can be made by one skilled in the art without departing from the spirit of the invention fall within the scope of the invention.
Claims (10)
1. The intelligent data storage system based on the piezoelectric sensor and the memristor is characterized in that the piezoelectric sensor and the memristor are integrated, a pressure power generation piece and an external circuit form the piezoelectric sensor, the resistance value of the memristor is changed through a pressure applying method, and therefore data recording and storage are achieved.
2. The intelligent data storage system based on the piezoelectric sensor-memristor as claimed in claim 1, wherein the memristor is formed by sequentially stacking a lower electrode, a resistance change layer and an upper electrode from bottom to top, the resistance change layer is Ga2O3A film.
3. The intelligent data storage system based on the piezoelectric sensor-memristor as claimed in claim 2, wherein the thickness of the lower electrode is 50-200nm, the thickness of the resistive layer is 10-100nm, and the thickness of the upper electrode is 50-200 nm.
4. The intelligent piezoelectric sensor-memristor-based data storage system as claimed in claim 2, wherein the lower electrode is one of conductive metal, metal alloy, conductive metal compound or other conductive material.
5. The intelligent piezoelectric sensor-memristor-based data storage system as claimed in claim 2, wherein the upper electrode is one of a conductive metal, a metal alloy, a conductive metal compound, or other conductive material.
6. A piezoelectric sensor-memristor-based intelligent data storage system according to claim 4 or 5, wherein the conductive metal is one of Ta, Cu, Ag, W, Ni, Al or Pt; the metal alloy is one of Pt/Ti, Ti/Ta, Cu/Ti, Cu/Au, Cu/Al or Al/Zr alloy; the conductive metal compound is TiN or ITO; other conductive materials such as AZO, FTO, graphene or one of nano silver wires.
7. The intelligent data storage system based on the piezoelectric sensor-memristor is characterized in that the pressing area of the pressure generating piece is connected with the lower electrode of the memristor through a lead, and is respectively connected with one end of the first resistor and one end of the second resistor through leads; the non-pressing area of the pressure power generation sheet is respectively connected with the upper electrode and the lower electrode of the memristor through leads, and the other end of the first resistor is connected to the lead between the non-pressing area of the pressure power generation sheet and the lower electrode of the memristor; the other end of the second resistor is connected with the base electrode of the triode, the collector electrode of the triode is connected to a lead between the non-pressing area of the pressure power generation sheet and the lower electrode of the memristor, the emitting electrode of the triode is connected with one end of the inductor, and the other end of the inductor is connected with the upper electrode of the memristor.
8. The intelligent piezoelectric sensor-memristor-based data storage system as claimed in claim 7, wherein an emitter of the triode is connected to one end of the inductor and grounded.
9. The operation mode of the intelligent data storage system based on the piezoelectric sensor-memristor is characterized in that when data are written, the erasing circuit is disconnected together with the writing circuit, the pressure generating piece is pressed, the electric signal passes through the writing circuit, the pressure generating piece is connected with the lower electrode of the memristor, the inductor is connected with the upper electrode of the memristor, low resistance value and large current are obtained, and the data are regarded as '0'; when erasing is carried out, the writing line is disconnected, the erasing line is connected, pressure is applied to the pressure generating piece, the electric signal passes through the erasing line, the pressing area and the non-pressing area of the pressure generating piece are respectively connected with the lower electrode and the upper electrode of the memristor, high resistance and small current are obtained and are regarded as data '1', namely, the alternating switching of data '0' and '1' in the binary system can be realized through the action of the two electric signal lines, and the storage and the erasing aiming at the data are completed.
10.Ga2O3The thin film is applied to an intelligent data storage system based on a piezoelectric sensor-memristor.
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