CN109273598A - A kind of silver nanowires composite graphite alkene memristor and preparation method thereof - Google Patents
A kind of silver nanowires composite graphite alkene memristor and preparation method thereof Download PDFInfo
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 239000002042 Silver nanowire Substances 0.000 title claims abstract description 94
- 239000002131 composite material Substances 0.000 title claims abstract description 72
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 71
- 239000010439 graphite Substances 0.000 title claims abstract description 71
- -1 graphite alkene Chemical class 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 239000002033 PVDF binder Substances 0.000 claims abstract description 81
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims abstract description 81
- 239000012528 membrane Substances 0.000 claims abstract description 75
- 230000005684 electric field Effects 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims description 37
- 239000004332 silver Substances 0.000 claims description 37
- 229920002799 BoPET Polymers 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 21
- 238000007650 screen-printing Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229920002545 silicone oil Polymers 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 6
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000003763 carbonization Methods 0.000 claims description 5
- 239000008103 glucose Substances 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 235000012149 noodles Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 4
- 229920000642 polymer Polymers 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 229920000049 Carbon (fiber) Polymers 0.000 description 4
- 239000004917 carbon fiber Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
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Abstract
The present invention discloses a kind of silver nanowires composite graphite alkene memristor and preparation method thereof.The PVDF piezoelectric membrane that the present invention uses is a kind of novel high polymer transductive material, it has many advantages, such as unique dielectric effect and piezoelectric effect, while having that elasticity is good, light, soft, high tenacity.Application of the present invention by PVDF piezoelectric membrane, silver nanowires composite graphite alkene in sensor field and memristor field organically combines, and has important practical significance for developing low-cost fexible film memory device.The silver nanowires composite graphite alkene layer is grown on the lower surface of PVDF piezoelectric membrane in flexible first electrode layer, and device shows resistance variations under DC Electric Field, has memory characteristic.Silver nanowires composite graphite alkene memristor provided by the invention based on PVDF piezoelectric membrane can be used as memory device, and manufacture craft is simple, first large area preparation and then can be cut into required size, have industrialization prospect.
Description
Technical field
The present invention relates to nano materials and flexible printing technical field, more particularly to a kind of silver nanowires composite graphite alkene
Memristor and preparation method thereof.
Background technique
Flexible electronic technology causes a skill with huge advantages such as its low cost, the simple and environmentally-friendly, sustainable developments of production
Art revolution.Simulate human body tactile storage system the flexible device with memory function wearable device, man-made electronic's skin,
The fields such as human health, motion monitoring, soft robot and artificial intelligence are of great significance.Currently, simulation tactile storage system
The significant challenge of system is how efficiently to be perceived by flexible electronic device, store extraneous electro photoluminescence.Usually requiring will be extraneous
Electro photoluminescence be converted into pressure signal, temperature signal or optical signal etc., then realize storage.
The memristor overwhelming majority is made using insulation oxide or single crystal semiconductor Si as substrate, the memristor made in this way
Device bendability is poor and at high cost.In process aspect, generallys use the micro-nano technologies Integration ofTechnology high storage density such as photoetching, electrograving and recall
Hinder device.The technologies such as electron beam lithography, focused ion beam nanoprocessing and extreme ultraviolet photolithographic are common preparation methods.But electron beam
Photoetching is not suitable for quantization production；Focused ion beam nanoprocessing process costs are too high, and general Study mechanism is difficult to realize；Extreme ultraviolet
Photoetching technique is only suitable for structure of the line width less than 20nm and manufactures, and needs high-cost mask plate and light source.As it can be seen that existing
Have the generally existing complex process of the preparation process of memristor, it is at high cost, be not easy to industrialization and preparation memristor bendability it is poor
The shortcomings that.
Summary of the invention
It is existing to solve the object of the present invention is to provide a kind of silver nanowires composite graphite alkene memristor and preparation method thereof
The memristor bendability difference and preparation process of method production be complicated, it is at high cost, be unfavorable for the problem of industrialization.
To achieve the above object, the present invention provides following schemes:
A kind of silver nanowires composite graphite alkene memristor, the silver nanowires composite graphite alkene memristor includes: successively to set
The top layer PET film set, flexible first electrode layer, silver nanowires composite graphite alkene layer, flexible second electrode layer, and from described
The first electrode that flexible first electrode layer is drawn and the second electrode drawn from the flexible second electrode layer；Described flexible first
Electrode layer includes that the conductive indium-tin oxide layer set is plated in PVDF piezoelectric membrane and PVDF piezoelectric membrane upper surface；Described flexible
Two electrode layers include the silver conductive layer of bottom PET film and bottom PET film upper surface silk screen printing.
Optionally, the thickness of the PVDF piezoelectric membrane is less than 300 μm.
Optionally, the conductive indium-tin oxide layer with a thickness of 0.5-10 μm.
Optionally, the silver conductive layer with a thickness of 8-15 μm.
Optionally, the silver nanowires composite graphite alkene layer with a thickness of 0.5-250 μm.
A kind of preparation method of silver nanowires composite graphite alkene memristor, the preparation method are used to prepare the silver nanoparticle
Line composite graphite alkene memristor；The preparation method includes:
Prepare PVDF piezoelectric membrane；
Thermal poling is carried out to the PVDF piezoelectric membrane using silicone oil thermal poling method, the PVDF piezoelectricity after forming thermal poling is thin
Film；
Plate conductive indium-tin oxide layer in the upper surface of PVDF piezoelectric membrane after the thermal poling；
The conductive indium-tin oxide layer and the first copper wire are pasted together using conductive silver glue by extraction first electrode；
Prepare bottom PET film；
In the upper surface silk screen printing silver conductive layer of the bottom PET film；
The silver conductive layer and the second copper wire are pasted together using conductive silver glue by extraction second electrode；
Silver nanowires composite graphite alkene layer is prepared in the lower surface of the PVDF piezoelectric membrane；
The silver nanowires composite graphite alkene layer of PVDF piezoelectric membrane lower surface growth is close to the silver conductive layer；
Top layer PET film is placed in the conductive indium-tin oxide layer upper surface and laminating packaging flexibility first electrode layer, silver
Nano wire composite graphite alkene layer and flexible second electrode layer form the silver nanowires composite graphite alkene memristor.
Optionally, described that thermal poling is carried out to the PVDF piezoelectric membrane using silicone oil thermal poling method, after forming thermal poling
PVDF piezoelectric membrane, specifically include:
PVDF piezoelectric membrane using silicone oil thermal poling method to thickness less than 300 μm polarizes, thermal poling electric field strength
For 100-160MV/m, poling temperature is 80-100 DEG C, polarization time 60-120min, the PVDF pressure after forming the thermal poling
Conductive film.
Optionally, conductive indium-tin oxide layer is plated in the upper surface of the PVDF piezoelectric membrane after the thermal poling, specifically
Include:
The conductive indium-tin oxide layer that the upper surface of PVDF piezoelectric membrane after the thermal poling is plated with a thickness of 0.5-10 μm.
Optionally, the upper surface silk screen printing silver conductive layer in the bottom PET film, specifically includes:
In the micro-nano silver paste of upper surface silk screen printing of the bottom PET film, 60min is toasted in 110 DEG C of baking ovens, is made
For the silver conductive layer gone out with a thickness of 8-15 μm.
Optionally, the lower surface in the PVDF piezoelectric membrane prepares silver nanowires composite graphite alkene layer, specific to wrap
It includes:
In three groups of parallel silver nanowiress of lower surface silk-screen of the PVDF piezoelectric membrane, three groups of parallel silver nanoparticles
Line is crossed to form silver nanowires conductive mesh network layers；
By the silver nanowires conductive mesh network layers made in 90 DEG C of dry 10min, then 110 DEG C anneal 2 hours, formed
Silver nanowires conductive network structure；
In high-pressure glass hydrothermal reaction kettle, reaction temperature is 100-150 DEG C, with the silver nanowires conductive network structure
The silver nanowires composite graphite alkene layer is prepared using hydrothermal carbonization method using glucose as carbon source for template；The silver nanoparticle
Line composite graphite alkene layer with a thickness of 0.5-250 μm.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
The present invention provides a kind of silver nanowires composite graphite alkene memristor and preparation method thereof, can expand fexible film note
Recall the constructing plan of device, the PVDF piezoelectric membrane that the present invention uses is a kind of novel high polymer transductive material, it has uniqueness
Dielectric effect and piezoelectric effect, while having many advantages, such as that elasticity is good, light, soft, high tenacity.The present invention is thin by PVDF piezoelectricity
The application of film, silver nanowires composite graphite alkene in sensor field and memristor field organically combines, for exploitation
Inexpensive fexible film memory device has important practical significance.The silver nanowires composite graphite alkene layer is grown on flexible the
The lower surface of PVDF piezoelectric membrane in one electrode layer, device show resistance variations under DC Electric Field, have memory special
Property.Silver nanowires composite graphite alkene memristor provided by the invention based on PVDF piezoelectric membrane can be used as memory device, and make
Make simple process, first large area preparation and then required size can be cut into, there is industrialization prospect.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also mention according to the present invention
The attached drawing of confession obtains other attached drawings.
Fig. 1 is the structural schematic diagram of silver nanowires composite graphite alkene memristor provided by the invention.
Wherein, 1 is flexible first electrode layer；2 be silver nanowires composite graphite alkene layer；3 be flexible second electrode layer；4 are
Bottom PEF film；5 be silver conductive layer；6 be PVDF piezoelectric membrane；7 be conductive indium-tin oxide layer；8 be top layer PEF film；9 are
First electrode；10 be second electrode.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It is existing to solve the object of the present invention is to provide a kind of silver nanowires composite graphite alkene memristor and preparation method thereof
The memristor bendability difference and preparation process of method production be complicated, it is at high cost, be unfavorable for the problem of industrialization.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is the structural schematic diagram of silver nanowires composite graphite alkene memristor provided by the invention.Referring to Fig. 1, the present invention
A kind of silver nanowires composite graphite alkene memristor based on PVDF piezoelectric membrane of offer includes: the top layer PET that sets gradually thin
Film 8, flexible first electrode layer 1, silver nanowires composite graphite alkene layer 2, flexible second electrode layer 3, and from described flexible first
The first electrode 9 that electrode layer 1 is drawn and the second electrode 10 drawn from the flexible second electrode layer 3.Flexible first electricity
Pole layer 1 is made of the upper surface plating indium tin oxide layer of PVDF piezoelectric membrane, therefore the flexible first electrode layer 1 is pressed including PVDF
The conductive indium-tin oxide layer 7 set is plated in conductive film 6 and 6 upper surface of PVDF piezoelectric membrane.The flexible second electrode layer 3 is
The micro-nano silver paste of upper surface silk screen printing of PET film forms, therefore the flexible second electrode layer 3 includes bottom PET film 4
And the silver conductive layer 5 of the 4 upper surface silk screen printing of bottom PET film.
Preferably, the thickness of the PVDF piezoelectric membrane 6 in the flexible first electrode layer 1 selects heat less than 300 μm
Polarization method makes the nonpolar alpha-crystal form of PVDF piezoelectric membrane 6 to polar beta crystal transfer；The electric field strength of thermal poling is 100-
160MV/m, poling temperature are 80-100 DEG C, polarization time 60-120min.
Preferably, the tin indium oxide that the upper surface plating of PVDF piezoelectric membrane 6 is set in the flexible first electrode layer 1 is led
Electric layer 7 with a thickness of 0.5-10 μm.
Preferably, the silver of the upper surface silk-screen printing of bottom PET film 4 is conductive in the flexible second electrode layer 3
Layer 5 with a thickness of 8-15 μm.
Preferably, three groups of lower surface silk-screen printing of the PVDF piezoelectric membrane 6 in the flexible first electrode layer 1 it is parallel
Line, three groups of parallel lines intersect each other to form conductive mesh network layers according to certain angle；It is put down for every group in three groups of parallel lines
Line covers the lower surface of entire PVDF piezoelectric membrane 6, and the line width of every group of parallel lines is 100-200 μm, parallel line
Spacing between line is 100-200 μm.The parallel lines are parallel silver nanowires.In the flexible first electrode layer 1
The 6 lower surface silk-screen printing of PVDF piezoelectric membrane the concentration of silver nanowires conductive ink that uses of three groups of parallel lines for 3mg/
ml-10mg/ml；Silver nanowires diameter is 50-500nm in the silver nanowires conductive ink, and length is 20-500 μm.
Using the silver nanowires conductive mesh network layers of 6 lower surface of PVDF piezoelectric membrane in flexible first electrode layer 1 as template, with
Glucose is carbon source, prepares the silver nanowires composite graphite alkene layer 2 with a thickness of 0.5-250 μm using hydrothermal carbonization method.The silver
Nano wire composite graphite alkene layer 2 is grown on the lower surface of PVDF piezoelectric membrane 6 in flexible first electrode layer 1.
Preferably, the silver nanowires composite graphite that 6 lower surface of PVDF piezoelectric membrane is grown in the flexible first electrode layer 1
Alkene layer 2 is close to flexible second electrode layer 3.Then top layer PET film 8 is placed in entire device top and laminating packaging flexibility first
Electrode 1, silver nanowires composite graphite alkene layer 2 and flexible second electrode layer 3, can form the silver nanowires composite graphite alkene and recall
Hinder device.
Under the action of an external electric field, deformation occurs for PVDF piezoelectric membrane 6, to silver for the silver nanowires composite graphite alkene memristor
The effect of the generation power of nano wire composite graphite alkene layer 2, makes the contact point between carbon fiber with external force and deformation occurs, leads
Resistance is sent a telegraph to change.
The present invention also provides a kind of preparation method of silver nanowires composite graphite alkene memristor, the preparation method includes such as
Lower step:
(1) flexible first electrode layer: a is prepared) select PVDF piezoelectric membrane of the silicone oil thermal poling method to thickness less than 300 μm
It polarizing, thermal poling electric field strength is 100-160MV/m, and poling temperature is 80-100 DEG C, polarization time 60-120min,
So that the nonpolar alpha-crystal form of PVDF piezoelectric membrane improves the piezoelectric property of PVDF piezoelectric membrane to polar beta crystal transfer；B) exist
The conductive indium-tin oxide layer that the upper surface of PVDF piezoelectric membrane after the thermal poling is plated with a thickness of 0.5-10 μm, using conductive silver
Conductive indium-tin oxide layer and the first copper wire are pasted together extraction first electrode by glue.
(2) prepare flexible second electrode layer: in the micro-nano silver paste of upper surface silk screen printing of bottom PET film, preparation is thick
The silver conductive layer that degree is 8-15 μm toasts 60min in 110 DEG C of baking ovens.Using conductive silver glue silver conductive layer and the second copper wire
It is pasted together extraction second electrode.
(3) silver nanowires composite graphite alkene layer: a is prepared) use concentration conductive for the silver nanowires of 3mg/ml-10mg/ml
Ink is between 100-200 μm, line and line in PVDF piezoelectric membrane lower surface first group of line width of silk-screen in flexible first electrode layer
Away from the parallel lines for 100-200 μm, first group of parallel lines covers entire PVDF piezoelectric membrane lower surface；Then it puts down for second group of silk-screen
Line, second group of parallel lines and first group of parallel lines intersect 60 degree of angles；Then silk-screen third group parallel lines, third group parallel lines
60 degree of angles are intersected with second group of parallel lines；Third group parallel lines and first group of parallel lines also intersect 60 degree of angles, and three groups parallel
Line is crossed to form conductive mesh network layers；It is small in 110 DEG C of annealing 2 by the silver nanowires conductive mesh network layers made in 90 DEG C of dry 10min
When, form silver nanowires conductive network structure；B) in high-pressure glass hydrothermal reaction kettle, reaction temperature is 100-150 DEG C, with soft
Property first electrode layer lower surface silver nanowires conductive network structure be template, using glucose as carbon source, using hydrothermal carbonization method
Prepare silver nanowires composite graphite alkene layer.
(4) laminating packaging: the silver nanowires of PVDF piezoelectric membrane lower surface growth in the flexible first electrode layer is answered
It closes graphene layer and is close to flexible second electrode layer；Top layer PET film is placed in entire device top and laminating packaging flexibility first
Electrode layer, silver nanowires composite graphite alkene layer and flexible second electrode layer obtain the silver nanowires composite graphite alkene memristor.
Wherein, polarity beta-crystalline form content in the crystalline phase of PVDF piezoelectric membrane after the silicone oil thermal poling method in the step (1)
For 85%-96%.In the silver nanowires conductive ink that silk-screen parallel lines described in the step (3) use silver nanowires diameter for
50-500nm, length are 20-500 μm；The silver nanowires composite graphite alkene layer with a thickness of 0.5-250 μm.
In practical applications, the silver nanowires composite graphite alkene memristor under the action of an external electric field send out by PVDF piezoelectric membrane
Raw deformation, the effect of power is generated to silver nanowires composite graphite alkene, sends out the contact point between carbon fiber with external force
Raw deformation, causes resistance to change.
Silver nanowires composite graphite alkene memristor prepared by the present invention, using fexible film replace conventional insulator oxide and
Silicon substrate realizes the store function to perception information.While the method for the present invention integrated level needed for meeting and performance, reduce
Cost, and the memristor being prepared have it is rollable, fold, it is transparent, can large area preparation etc. advantages.In particular by silk screen
Printing technology can make flexible electronic device on a large scale to improve manufacture efficiency, reduce cost of manufacture.It can first large-area manufacturing
Then memristor device is cut into required size.The key of the production design of flexible device is new material and new technology.Wherein,
The PVDF piezoelectric membrane that memristor of the present invention uses have good deformation, convenient for multifunctional unit, have higher chemical stabilization
Property, agent of low hygroscopicity, high thermal stability, high anti-UV radianting capacity, the advantages that fatigue resistance is strong, are especially their ability to power
Signal is converted to this characteristic of electric signal and is widely applied in flexible electronic field.In addition, graphene be one very
Ideal saturated absorbing body, can be with carrier between the specific surface area of super large, good Material cladding characteristic and electrode
Rapid, high volume shuttle.By silver nanowires composite graphite alkene group elastomer-forming, then integrated with PVDF piezoelectric membrane,
Under external electrical field effect, piezoelectric membrane, which deforms, generates the effect of power, makes the contact point between carbon fiber with external force
And deformation occurs, changes so as to cause resistance.The high-impedance state of memristor is defined as " 1 ", low resistance state is defined as " 0 ", such as
Binary coding is used with computer, it can realizes information storage.Therefore, the present invention forms silver nanowires composite graphite alkene
Elastomer and PVDF thin film are integrated to prepare memory device, are of great significance and application prospect, and by pressure sensing
Effective integration is carried out with memristor, to the effective way of the simulation of human body haptic system.
Technical solution of the present invention is further discussed in detail below by a specific embodiment.
Embodiment 1
Structure such as Fig. 1 of the silver nanowires composite graphite alkene memristor based on PVDF piezoelectric membrane of the embodiment 1 preparation
It is shown, by flexible first electrode layer 1, silver nanowires composite graphite alkene layer 2, flexible second electrode layer 3, bottom PEF film 4, silver
Conductive layer 5, PVDF piezoelectric membrane 6, indium tin oxide conductive film 7, top layer PEF film 8, first electrode 9 and second electrode 10 form；
(1) flexible first electrode layer: a is prepared) select PVDF piezoelectric membrane of the silicone oil thermal poling method to thickness less than 300 μm
It polarizing, thermal poling electric field strength is 100-160MV/m, and poling temperature is 80-100 DEG C, polarization time 60-120min,
So that the nonpolar alpha-crystal form of PVDF piezoelectric membrane improves the piezoelectric property of PVDF piezoelectric membrane to polar beta crystal transfer；B) exist
The conductive indium-tin oxide layer that the upper surface of PVDF piezoelectric membrane after the thermal poling is plated with a thickness of 0.5-10 μm, using conductive silver
Conductive indium-tin oxide layer and copper wire are pasted together extraction first electrode by glue.
(2) prepare flexible second electrode layer: in the micro-nano silver paste of upper surface silk screen printing of bottom PET film, preparation is thick
The silver conductive layer that degree is 8-15 μm toasts 60min in 110 DEG C of baking ovens.Silver conductive layer and copper wire are pasted using conductive silver glue
Second electrode is drawn together.
(3) silver nanowires composite graphite alkene layer: a is prepared) use concentration conductive for the silver nanowires of 3mg/ml-10mg/ml
Ink, PVDF piezoelectric membrane lower surface first group of line width of silk-screen in flexible first electrode layer are 100-200 μm, between line and line
Away from the parallel lines for 100-200 μm, first group of parallel lines covers entire PVDF piezoelectric membrane lower surface；Then it puts down for second group of silk-screen
Line and first group of parallel lines intersect 60 degree of angles；Then silk-screen third group parallel lines and second group of parallel lines intersect 60 degree
Angle；Third group parallel lines and first group of parallel lines also intersect 60 degree of angles, and three groups of parallel lines are crossed to form conductive mesh network layers；
By the silver nanowires conductive mesh network layers made in 90 DEG C of dry 10min, in 110 DEG C of annealing, 2 hours formation silver nanoparticles
Line conductive network structure；
B) in high-pressure glass hydrothermal reaction kettle, reaction temperature is 100-150 DEG C, with flexible first electrode layer lower surface
Silver nanowires conductive network structure prepares silver nanowires composite stone using hydrothermal carbonization method using glucose as carbon source for template
Black alkene layer.
(4) by the silver nanowires composite graphite alkene layer of PVDF piezoelectric membrane lower surface growth in the flexible first electrode layer
It is close to flexible second electrode layer；PET film is placed in entire device top and laminating packaging flexibility first electrode, silver nanowires are multiple
Graphene layer and flexible second electrode layer are closed, the silver nanowires composite graphite alkene memristor based on PVDF piezoelectric membrane is prepared.
The silver nanowires composite graphite alkene layer is grown on the lower surface of PVDF piezoelectric membrane in flexible first electrode layer,
Deformation occurs for PVDF piezoelectric membrane under the action of an external electric field, and the effect of power is generated to silver nanowires composite graphite alkene, makes carbon fiber
Between contact point is with external force and deformation occurs, cause resistance to change.Device high-impedance state is defined as " 1 ", and low resistance state is fixed
Justice is " 0 ", as the one state and 0 state of computer store to realize.
The foregoing is merely the preferable specific embodiments of the present invention, but scope of protection of the present invention is not limited thereto, appoint
Within the technical scope of the present disclosure, any changes or substitutions that can be easily thought of, all by what those familiar with the art
It should be included within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims
Subject to enclosing.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand the device of the invention and its core concept；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of silver nanowires composite graphite alkene memristor, which is characterized in that the silver nanowires composite graphite alkene memristor packet
It includes: top layer PET film, the flexible first electrode layer, silver nanowires composite graphite alkene layer, flexible second electrode layer set gradually,
And the first electrode drawn from the flexible first electrode layer and the second electrode drawn from the flexible second electrode layer；Institute
Stating flexible first electrode layer includes that the conductive indium-tin oxide layer set is plated in PVDF piezoelectric membrane and PVDF piezoelectric membrane upper surface；
The flexible second electrode layer includes the silver conductive layer of bottom PET film and bottom PET film upper surface silk screen printing.
2. silver nanowires composite graphite alkene memristor according to claim 1, which is characterized in that the PVDF piezoelectric membrane
Thickness less than 300 μm.
3. silver nanowires composite graphite alkene memristor according to claim 1, which is characterized in that the tin indium oxide is conductive
Layer with a thickness of 0.5-10 μm.
4. silver nanowires composite graphite alkene memristor according to claim 1, which is characterized in that the thickness of the silver conductive layer
Degree is 8-15 μm.
5. silver nanowires composite graphite alkene memristor according to claim 1, which is characterized in that the silver nanowires is compound
Graphene layer with a thickness of 0.5-250 μm.
6. a kind of preparation method of silver nanowires composite graphite alkene memristor, which is characterized in that the preparation method is used to prepare
Silver nanowires composite graphite alkene memristor described in claim 1；The preparation method includes:
Prepare PVDF piezoelectric membrane；
Thermal poling is carried out to the PVDF piezoelectric membrane using silicone oil thermal poling method, the PVDF piezoelectric membrane after forming thermal poling；
Plate conductive indium-tin oxide layer in the upper surface of PVDF piezoelectric membrane after the thermal poling；
The conductive indium-tin oxide layer and the first copper wire are pasted together using conductive silver glue by extraction first electrode；
Prepare bottom PET film；
In the upper surface silk screen printing silver conductive layer of the bottom PET film；
The silver conductive layer and the second copper wire are pasted together using conductive silver glue by extraction second electrode；
Silver nanowires composite graphite alkene layer is prepared in the lower surface of the PVDF piezoelectric membrane；
The silver nanowires composite graphite alkene layer of PVDF piezoelectric membrane lower surface growth is close to the silver conductive layer；
Top layer PET film is placed in the conductive indium-tin oxide layer upper surface and laminating packaging flexibility first electrode layer, silver nanoparticle
Line composite graphite alkene layer and flexible second electrode layer form the silver nanowires composite graphite alkene memristor.
7. preparation method according to claim 6, which is characterized in that described to be pressed using silicone oil thermal poling method the PVDF
Conductive film carries out thermal poling, and the PVDF piezoelectric membrane after forming thermal poling specifically includes:
PVDF piezoelectric membrane using silicone oil thermal poling method to thickness less than 300 μm polarizes, and thermal poling electric field strength is
100-160MV/m, poling temperature are 80-100 DEG C, polarization time 60-120min, the PVDF piezoelectricity after forming the thermal poling
Film.
8. preparation method according to claim 6, which is characterized in that the PVDF piezoelectric membrane after the thermal poling
Upper surface plate conductive indium-tin oxide layer, specifically include:
The conductive indium-tin oxide layer that the upper surface of PVDF piezoelectric membrane after the thermal poling is plated with a thickness of 0.5-10 μm.
9. preparation method according to claim 6, which is characterized in that described in the upper surface of bottom PET film silk
Wire mark silver conductive layer, specifically includes:
In the micro-nano silver paste of upper surface silk screen printing of the bottom PET film, 60min is toasted in 110 DEG C of baking ovens, is prepared
With a thickness of 8-15 μm of the silver conductive layer.
10. preparation method according to claim 6, which is characterized in that the lower surface in the PVDF piezoelectric membrane
Silver nanowires composite graphite alkene layer is prepared, is specifically included:
In three groups of parallel silver nanowiress of lower surface silk-screen of the PVDF piezoelectric membrane, described three groups parallel silver nanowires phases
Friendship forms silver nanowires conductive mesh network layers；
By the silver nanowires conductive mesh network layers made in 90 DEG C of dry 10min, then 110 DEG C anneal 2 hours, formed silver receive
Rice noodles conductive network structure；
In high-pressure glass hydrothermal reaction kettle, reaction temperature is 100-150 DEG C, using the silver nanowires conductive network structure as mould
Plate prepares the silver nanowires composite graphite alkene layer using hydrothermal carbonization method using glucose as carbon source；The silver nanowires is multiple
Close graphene layer with a thickness of 0.5-250 μm.
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Effective date of registration: 20231211 Address after: 311217 Building C, Shengzhong Village, Xinjie Street, Xiaoshan District, Hangzhou City, Zhejiang Province, China, 1003-1005 Patentee after: Hangzhou Zhiwei Medical Equipment Co.,Ltd. Address before: 1 Xinghua Street (2nd section), Daxing District, Beijing Patentee before: BEIJING INSTITUTE OF GRAPHIC COMMUNICATION |