CN114464732A - Full-optical-control memristor with double-layer thin film structure and preparation method thereof - Google Patents
Full-optical-control memristor with double-layer thin film structure and preparation method thereof Download PDFInfo
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- CN114464732A CN114464732A CN202210084878.2A CN202210084878A CN114464732A CN 114464732 A CN114464732 A CN 114464732A CN 202210084878 A CN202210084878 A CN 202210084878A CN 114464732 A CN114464732 A CN 114464732A
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- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 14
- 229910015711 MoOx Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- -1 inert electrode Substances 0.000 claims abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 32
- 239000011787 zinc oxide Substances 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000012300 argon atmosphere Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000033228 biological regulation Effects 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000005036 potential barrier Methods 0.000 abstract description 5
- 230000005764 inhibitory process Effects 0.000 abstract description 4
- 238000011160 research Methods 0.000 abstract description 4
- 230000004913 activation Effects 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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Abstract
The invention discloses a full-optical control memristor with a double-layer thin film structure and a preparation method thereof2Substrate, inert electrode, ZnO film layer, and MoOxA thin film layer and a transparent electrode, the ZnO thin film layer and MoOxThe thin film layers jointly form a photoelectric memristor layer of the all-optical control memristor device to form a heterojunction structure with a certain potential barrier width. The all-optical control memristor can regulate and control ZnO/MoOxThe potential barrier width of the heterojunction realizes reversible activation and inhibition of optical gating under the regulation and control of ultraviolet light and green light. The all-optical control memristor is used as a two-end device, is simple in structure, easy to prepare and integrated, and can realize reversible modulation on the device under all-optical control by utilizing reversible regulation and control of ultraviolet light and green light. Has good application potential in the research of vision sense integration technology.
Description
Technical Field
The invention belongs to the technical field of microelectronic materials and devices, and relates to an all-optical control memristor with a double-layer thin film structure and a preparation method thereof.
Background
The von Neumann architecture plays a crucial role in the development of modern intelligent technology, provides practical theoretical guidance for the operation architecture of a computer, and makes the computer system an indispensable part in human life. However, with the advent of the intelligence era, in the modern life of data explosion, various artificial intelligence technologies require faster operation speed, and also require larger memory space and lower operation energy consumption. Gradually, it is recognized that in the traditional von neumann architecture, since the unit responsible for information storage and the arithmetic unit responsible for data processing are in separate states, the processing connection between the two units needs a data analog-to-digital conversion (ADC) device to complete, the information conversion and transfer between the independent functional units needs extra time and energy consumption, which limits the improvement of the computational efficiency and also makes the modern computer arithmetic system power consumption huge, which is called as von neumann bottleneck. Therefore, developing new sensor computing electronics with the ability to avoid data conversion and transmission is an important goal for researchers. Since the memristor has the characteristics of high density, low delay, non-volatility in data processing and the like, the electronic components are widely concerned in the technical field of integration of computing, and become an important scientific research direction for scientific researchers. In addition, the introduction of optical and electrical cooperative modulation lays a solid foundation for the research of the development of the sense-computation-integrated technology of the memristor. However, in most memristive devices, optical signals can only enable the devices to be excited unidirectionally, if bidirectional excitation and suppression functions are required, and the introduction of electric signals is still required, so that the memristive devices are still balanced in the development of the integrated technology of the inductive memory.
Disclosure of Invention
Based on the technical current situation, the invention provides an all-optical control memristor with a double-layer thin film structure and a preparation method thereof, and excitation and inhibition effects can be realized under all-optical conditions.
The technical scheme of the invention is as follows:
all-optical control memristor device with double-layer film sequentially comprising SiO from bottom to top2Substrate, inert electrode, ZnO thin film layer, and MoOxThin film layer, transparent electrode, ZnO thin film layer and MoOxThe thin film layers jointly form a photoelectric memristor layer of the all-optical control memristor.
The thickness of the ZnO film layer is 100 +/-20 nm, and the MoO isxThe thickness of the thin film layer is 100 +/-30 nm.
The inert electrode is W, Pt, etc., and the transparent electrode is ITO, FTO, etc.
A preparation method of the full-optical control memristor device with the double-layer film structure comprises the following steps:
s1, mixing SiO2Ultrasonically cleaning the substrate for 8-15 minutes by using acetone, ethanol and deionized water in sequence, and drying the substrate by using nitrogen;
s2 in SiO2Depositing a W film on the substrate as a bottom electrode, wherein the growth conditions are as follows: sputtering for 5 minutes at the power of 80W by using a tungsten target under the environment of pure argon at room temperature;
s3, depositing a ZnO film on the W electrode, wherein the growth conditions are as follows: sputtering for 30 minutes at the power of 80W by using a zinc oxide target in the environment of pure argon at room temperature;
s4, MoO is deposited on the ZnO filmxThe film is grown under the following conditions: sputtering for 30 minutes at the power of 80W by using a molybdenum oxide target in the environment of pure argon at room temperature to prepare the photoelectric memristor layer;
s5, depositing a transparent electrode ITO on the photoelectric memristor layer prepared in the step S4, wherein the growth conditions are as follows: sputtering was performed at a power of 30W for 2 minutes using an ITO target under a pure argon atmosphere at room temperature.
In steps S2-S5, the deposition methods are all magnetron sputtering methods.
The all-optical control memristor can regulate and control ZnO/MoOxThe potential barrier width of the heterojunction realizes reversible activation and inhibition of optical gating under the regulation and control of ultraviolet light and green light. The all-optical control memristor is used as a two-end device, is simple in structure, easy to prepare and integrated, and can realize reversible modulation on the device under all-optical control by utilizing reversible regulation and control of ultraviolet light and green light. Has good application potential in the research of vision sense integration technology.
Drawings
FIG. 1 is a schematic structural diagram of an all-optically-controlled memristive device constructed in accordance with the present disclosure;
FIG. 2 is a flow chart of a fabrication process of an all-optical memristor device constructed in accordance with the present disclosure;
FIG. 3 is a graph of current-voltage (I-V) characteristics of an initial state of a fully-optically-controlled memristive device constructed in accordance with the present disclosure;
FIG. 4 is a graph of current-time (I-t) characteristics of an all-optical control memristor device constructed in accordance with the present disclosure under ultraviolet light irradiation;
FIG. 5 is a graph of the current-time (I-t) characteristic of an all-optically controlled memristor device constructed in accordance with the present disclosure under green light illumination;
FIG. 6 is a graph of current-time (I-t) characteristics of an all-optical-control memristor device constructed according to the present disclosure under alternating irradiation of ultraviolet light and green light.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings.
Examples
FIG. 3 is a graph of current-voltage (I-V) characteristics of an initial state of a fully-optically-controlled memristive device constructed in accordance with the present disclosure.
As shown in fig. 3, under continuous positive voltage sweeps, the device conductance continues to drop; the device conductance also drops continuously with successive negative voltage sweeps.
FIG. 4 is a graph of current-time (I-t) characteristics of an all-optical-control memristor device constructed in accordance with the present disclosure under ultraviolet light irradiation.
As shown in FIG. 4, when the device is continuously irradiated with UV light having a wavelength in the range of 320-380nm for a long time, the device state current obtained from the 0.1V reading voltage gradually rises and gradually reaches the saturation state, which can be interpreted as (1) photo-induced ionization reaction, V, under UV light irradiationO 2+The increase in the amount results in ZnO/MoOxThe heterojunction width is reduced, so that the device conductance is increased; (2) ultraviolet irradiation to generate conductivity HyMoOxIn MoOxA permeable conductive network is formed in the film, so that the conductance of the device is increased, and an excitation effect is generated.
FIG. 5 is a graph of the current-time (I-t) characteristic of an all-optically controlled memristive device constructed in accordance with the present disclosure under green light illumination.
As shown in FIG. 5, when the device was continuously irradiated with green light having a wavelength in the range of 500-560nm for a long time, the device state current obtained from the 0.1V read voltage gradually dropped and gradually reached a stable state, which can be explained as that electrons in a potential well formed by bending the band of ZnO by photoexcitation easily pass through or jump over the potential barrier and enter MoO under irradiation of long-wavelength lightxAnd (4) a conduction band. Some electrons are VO 2+Trapped and then converted to VOThe barrier is widened, so that the device conductance is reduced, and the suppression effect is generated.
FIG. 6 is a graph of current-time (I-t) characteristics of an all-optical-control memristor device constructed according to the present disclosure under alternating irradiation of ultraviolet light and green light.
As shown in fig. 6, when the device is placed in the initial state, the device is alternately illuminated with ultraviolet light and green light, so that continuous modulation of light excitation and light suppression can be achieved, and total light control modulation can be achieved.
In conclusion, the all-optical control memristor provided by the invention can regulate and control ZnO/MoOxThe potential barrier width of the heterojunction realizes reversible activation and inhibition of optical gating under the regulation and control of ultraviolet light and green light.
Claims (5)
1. All-optical control memristor device with double-layer thin film structure sequentially comprises SiO from bottom to top2Substrate, inert electrode, ZnO thin film layer, and MoOxThin film layer, transparent electrode, ZnO thin film layer and MoOxThe thin film layers jointly form a photoelectric memristor layer of the all-optical control memristor; the thickness of the ZnO film layer is 100 +/-20 nm.
2. The all-optical-control memristor device with a double-layer thin film structure according to claim 1, wherein the MoO isxThe thickness of the thin film layer is 100 +/-30 nm.
3. The all-optical memristive device of a double-layer thin film structure according to claim 1 or 2, wherein the inert electrode is W or Pt, and the transparent electrode is ITO or FTO.
4. The preparation method of the all-optical-control memristor device with the double-layer thin film structure is characterized by comprising the following steps of:
s1, mixing SiO2Ultrasonically cleaning the substrate for 8-15 minutes by using acetone, ethanol and deionized water in sequence, and drying the substrate by using nitrogen;
s2 in SiO2Depositing a W film on the substrate as a bottom electrode, wherein the growth conditions are as follows: sputtering for 5 minutes at the power of 80W by using a tungsten target under the environment of pure argon at room temperature;
s3, depositing a ZnO film on the W electrode, wherein the growth conditions are as follows: sputtering for 30 minutes at the power of 80W by using a zinc oxide target in the environment of pure argon at room temperature;
s4, MoO is deposited on the ZnO filmxThe film is grown under the following conditions: sputtering for 30 minutes at the power of 80W by using a molybdenum oxide target in the environment of pure argon at room temperature to prepare the photoelectric memristor layer;
s5, depositing a transparent electrode ITO on the photoelectric memristor layer prepared in the step S4, wherein the growth conditions are as follows: sputtering was performed at a power of 30W for 2 minutes using an ITO target under a pure argon atmosphere at room temperature.
5. The method of claim 4, wherein: in steps S2-S5, the deposition method is a magnetron sputtering method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115014584A (en) * | 2022-06-05 | 2022-09-06 | 江苏师范大学 | Skin touch bionic system and preparation method thereof |
| CN116507195A (en) * | 2023-06-21 | 2023-07-28 | 武汉大学 | Based on WO x /YO y Preparation method of double-heterojunction structure analog memristor |
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- 2022-01-25 CN CN202210084878.2A patent/CN114464732A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115014584A (en) * | 2022-06-05 | 2022-09-06 | 江苏师范大学 | Skin touch bionic system and preparation method thereof |
| CN115014584B (en) * | 2022-06-05 | 2024-04-05 | 江苏师范大学 | Skin touch bionic system and preparation method thereof |
| CN116507195A (en) * | 2023-06-21 | 2023-07-28 | 武汉大学 | Based on WO x /YO y Preparation method of double-heterojunction structure analog memristor |
| CN116507195B (en) * | 2023-06-21 | 2023-10-17 | 武汉大学 | Based on WO x /YO y Preparation method of double-heterojunction structure analog memristor |
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