CN109449287B - Preparation method of memristor sensitive to environmental factors - Google Patents

Preparation method of memristor sensitive to environmental factors Download PDF

Info

Publication number
CN109449287B
CN109449287B CN201811188337.4A CN201811188337A CN109449287B CN 109449287 B CN109449287 B CN 109449287B CN 201811188337 A CN201811188337 A CN 201811188337A CN 109449287 B CN109449287 B CN 109449287B
Authority
CN
China
Prior art keywords
memristor
sensitive
substrate
film
bifeo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811188337.4A
Other languages
Chinese (zh)
Other versions
CN109449287A (en
Inventor
孙柏
李小霞
付国强
陈元正
李冰
赵勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southwest Jiaotong University
Original Assignee
Southwest Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southwest Jiaotong University filed Critical Southwest Jiaotong University
Priority to CN201811188337.4A priority Critical patent/CN109449287B/en
Publication of CN109449287A publication Critical patent/CN109449287A/en
Application granted granted Critical
Publication of CN109449287B publication Critical patent/CN109449287B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Abstract

The invention discloses a preparation method of a memristor sensitive to environmental factors, which specifically comprises the following steps: s1: cleaning the substrate; s2: sputter deposition of Cu2ZnSnSe4Film formation: obtaining Cu by controlled sputtering2ZnSnSe4A film; s3: sputter deposition of BiFeO3Film formation: after the processing of step S2, in Cu2ZnSnSe4BiFeO is obtained by magnetron sputtering on the film3A film; s4: preparing an upper electrode: after the well-deposited BiFeO3And an upper electrode is deposited on the surface of the thin film, so that the memristor sensitive to environmental factors is obtained. The preparation method of the memristor sensitive to the environmental factors, provided by the invention, has the advantages of simple steps and strong operability, and is suitable for industrial production; the prepared memristor device shows excellent memristor performance, is simple in structure, good in repeatability and low in cost, and has good application prospects in the fields of novel memories, electronic devices for future outer space exploration and the like.

Description

Preparation method of memristor sensitive to environmental factors
Technical Field
The invention belongs to the field of semiconductor thin film devices, and particularly relates to a preparation method of a memristor sensitive to environmental factors.
Background
With the rapid development of information digitization, computer technology, the internet and portable electronic products, the role of electronic devices in life becomes more and more important, and a large amount of information needs to be processed and received by the electronic devices every day. Therefore, higher demands are made on the performance of electronic devices, such as fast speed, high storage capacity, long service life, small volume, and the like. However, for memory devices, conventional semiconductor memory devices based on charge storage currently suffer from severe physical theory and dual limitations of manufacturing technology due to the shrinking size, and thus cannot meet the rapid development of information technology today. Therefore, the breakthrough of the bottleneck of the existing storage technology has great significance for the further development of the information technology in the future. Currently, memories can be broadly divided into two categories, namely: A. a volatile random access memory; B. a non-volatile memory. A memristive Switching Random Access Memory (RRAM) is a novel nonvolatile Memory based on current control of resistance change in recent years. The memristor has the advantages of simple structure, small storage unit, high reading and writing speed, relatively simple preparation technology and the like. The basic memory cells of the memory device are: the sandwich structure of top electrode/dielectric layer/bottom electrode, RRAM is considered by researchers to be one of the most promising new concept memory devices of the next generation.
In the research of memristors, memory devices having memory characteristics at room temperature are receiving the attention of researchers. Meanwhile, adding additional parameters to improve the memory characteristics of the memristive device is also an important way for solving the current functional requirements of electronic products. The memristor sensitive to environmental factors has a special memristive effect and is widely concerned by scientific researchers, electronic devices are more and more important to use in complex environments (such as darkness, common conditions, light adding and heating), application prospects play a very important role in future outer space exploration, the storage state of the devices can be obviously increased by regulating and controlling the characteristics of the memristor through environmental conditions, and the storage density of a storage device is improved. The regulation and control method is easy to regulate and control, and is one of the simplest and cheap ways for improving the storage performance.
Therefore, the method for researching the preparation method of the memristor sensitive to the environmental factors has great significance, and a new way is probably provided for developing a novel electronic device and realizing the development of an electronic device with more excellent performance.
Disclosure of Invention
The invention aims to solve the problems and develop a preparation method of a memristor sensitive to environmental factors, the memristor is simple in structure, excellent in performance, stable and good in repeatability, and is sensitive to the environmental factors, the control conditions of a memory are increased, and the storage density of the memory device is improved. The method has good application prospect in the field of novel multi-state storage electronic devices and the exploration of future multifunctional electronic devices.
In order to solve the technical problems, the technical scheme of the invention is as follows: a preparation method of a memristor sensitive to environmental factors specifically comprises the following steps:
s1: cleaning a substrate: cleaning and drying the substrate, and then putting the substrate into a magnetron sputtering chamber;
s2: sputter deposition of Cu2ZnSnSe4Film formation: cu is arranged on a magnetron sputtering target gun2ZnSnSe4The compound target material comprises a Cu, Zn, Sn and Se atomic ratio of 2:1:1:4, a target base distance of 8-12cm, high-purity argon as working gas is introduced after the bottom of a magnetron sputtering chamber is vacuumized, the sputtering pressure is set to be 0.5-1.0 Pa (the sputtering pressure directly influences the density of a film), the substrate temperature is 200-300 ℃ (the substrate temperature influences the crystal orientation distribution), and the sputtering power is 80-100W/cm2Sputtering for 20-30 min to obtain Cu2ZnSnSe4A film;
s3: sputter deposition of BiFeO3Film formation: after the step S2, BiFeO is mounted on the magnetron sputtering target gun3A compound target material, wherein the atomic ratio of Bi, Fe and O is 1:1:3, the target base distance is set to be 8-12cm, a magnetron sputtering chamber is vacuumized, high-purity argon is introduced to serve as working gas, the sputtering pressure is set to be 0.5-1.0 Pa, the substrate temperature is set to be room temperature, and the sputtering power is 80-100W/cm2Sputtering for 15-20 min to obtain BiFeO3A film;
s4: preparing an upper electrode: after the well-deposited BiFeO3And an upper electrode is deposited on the surface of the thin film, so that the memristor sensitive to environmental factors is obtained.
In the above technical solution, in the step S1, the specific method for cleaning is as follows: and sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, respectively carrying out ultrasonic cleaning for 10-20 min, blow-drying the substrate by using nitrogen, and putting the substrate into a magnetron sputtering chamber.
In the above technical solution, in the step S2, the background vacuum degree of the magnetron sputtering chamber is pumped to 3.6x10-4Pa, and the purity of the high-purity argon is 99.999 percent.
In the above technical solution, in the step S3, the background vacuum degree of the magnetron sputtering chamber is pumped to 3.6x10-4Pa, and the purity of the high-purity argon is 99.999 percent.
In the above technical solution, in the step S4, the deposited BiFeO is3The surface of the film is covered with a metal mask plate with the aperture of 1mm, and an upper electrode is deposited by a direct current sputtering method. The upper electrode may be a bar-shaped, circular, or the like electrode, and a circular upper electrode is deposited in the present invention.
In the above technical solution, in the step S2, BiFeO is obtained3The thickness of the film is 150 to 200 nm.
In the above technical solution, in the step S3, Cu2ZnSnSe4The thickness of the film is 400 to 600 nm.
In the above technical scheme, the substrate is a substrate covered with an FTO thin film, and the substrate is flat glass or quartz.
In the above technical solution, in the step S4, the upper electrode is made of silver.
The preparation method of the memristor sensitive to the environmental factors, provided by the invention, has the innovation points that: although there are many current reports on resistive switching, few materials are simultaneously sensitive to a variety of additional conditions, and in the present invention, Cu is used2ZnSnSe4And BiFeO3As the functional layer of the resistance switch, Ag/BiFeO with is prepared3/Cu2ZnSnSe4The electronic device with the FTO structure can be sensitive to various conditions (darkness, common, light adding, heating and the like) at the same time, and lays a good foundation for developing a next-generation new-concept multifunctional memory.
The beneficial results of the invention are: the preparation method of the memristor for the environmental factors, provided by the invention, has the advantages of simple steps and strong operability, and is suitable for industrial production; the prepared memristor device shows excellent memristor performance, is simple in structure, good in repeatability and low in cost, and has good application prospects in the fields of novel memories, electronic devices for future outer space exploration and the like.
Description of the drawings:
FIG. 1 is an XRD spectrum of a memristive device (with the structure of Ag/BFO/CZTSe/FTO) prepared in an example;
FIG. 2 is a current-voltage characteristic curve of a memristive device prepared in an example under different test conditions;
FIG. 3 is a resistance state-time characteristic curve of a memristive device prepared in an example under different test conditions;
fig. 4 is a resistance state-turn number characteristic curve of the memristive device prepared in the example under different test conditions.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments:
the invention provides a preparation method of a memristor sensitive to environmental factors, which comprises the following steps:
s1: cleaning a substrate: taking flat glass covered with an FTO film as a substrate, sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, performing ultrasonic treatment for 10-20 min respectively, blow-drying by using nitrogen, and putting into a magnetron sputtering chamber for later use;
s2: sputter deposition of Cu2ZnSnSe4(CZTSe) film: cu is arranged on a magnetron sputtering target gun2ZnSnSe4A compound target material with the atomic ratio of Cu, Zn, Sn and Se of 2:1:1:4, the target base distance of 8-12cm, and the background vacuum degree of a magnetron sputtering chamber is pumped to 3.6 multiplied by 10-4Pa, introducing high-purity argon with the purity of 99.999 percent as working gas, setting the substrate temperature to be 200 ℃, and pumping the background vacuum degree of the sputtering chamber to be less than 1 multiplied by 10-3Pa, introducing argon with the purity of 99.999 percent as working gas, setting the sputtering pressure to be 0.6Pa, and placing the substrateThe temperature is 200 ℃, the sputtering power is 80W/cm2Sputtering for 20min to obtain Cu2ZnSnSe4A film;
s3: sputter deposition of BiFeO3(BFO) film: after the step S2, BiFeO is mounted on the magnetron sputtering target gun3A compound target material with the atomic ratio of Bi, Fe and O being 1:1:3, setting the target base distance to be 8-12cm, and pumping the background vacuum degree of a magnetron sputtering chamber to be 3.6 multiplied by 10-4Pa, introducing high-purity argon with the purity of 99.999 percent as working gas, setting the substrate temperature to be 200 ℃, and pumping the background vacuum degree of the sputtering chamber to be less than 1 multiplied by 10-3Pa, introducing argon with the purity of 99.999 percent as working gas, setting the sputtering pressure to be 0.8Pa and the sputtering power to be 80W/cm2Sputtering for 20min to obtain BiFeO3A film;
s4: preparing an upper electrode: after the well-deposited BiFeO3The surface of the film is covered with a metal mask plate with the aperture of 1mm, and a circular Ag electrode is deposited by a direct current sputtering method.
As shown in FIG. 1, the XRD pattern of the Ag/BFO/CZTSe/FTO film obtained in this example is shown. As can be seen from fig. 1, the strongest peak at around 24 degrees is a characteristic peak of CZTSe, and the preferred orientation thereof is (110). The most intense characteristic peak of BFO is found near 29 degrees, the preferred orientation is (111), the diffraction peak of Ag element is found near 43 degrees, the preferred orientation is (200), SnO is found near 63 degrees2The most intense peak of (a), which is preferentially oriented to (111), is free of other peaks as can be seen from the XRD pattern.
As shown in fig. 2, the current-voltage (I-V) characteristic curves of the devices prepared in this example under different test conditions are shown. Wherein the graph (a) is a current-voltage (I-V) characteristic curve under ordinary conditions. Graph (b) is a current-voltage (I-V) characteristic curve under dark conditions. Graph (c) is a current-voltage (I-V) characteristic curve for heating to 400K. As is apparent from fig. 2, the device exhibited different current-voltage (I-V) characteristics under different test conditions.
As shown in fig. 3, the resistance-time characteristic curves of the devices prepared in this example under different test conditions at an operating voltage of 1.025V are shown. Wherein the graph (a) is a resistance state-time characteristic curve under ordinary conditions. FIG. b is a resistance state-time characteristic curve under dark conditions. FIG. c is a resistance-time characteristic curve of heating to 400K. It can be seen from fig. 3 that under the same operating voltage, the influence of different test environments on the resistance state change of the element is more obvious.
As shown in fig. 4, the resistance-turn characteristic curve of the device manufactured in this embodiment in a simulated variable test environment is shown, and it can be seen from the graph (a) that the resistance change of the device by the environment is obvious, and multi-state storage can be realized by environment control. Graph (b) is a resistance state-to-turns graph of the device tested for 500 turns at a temperature of 400K.
In conclusion, the preparation method of the memristor sensitive to the environmental factors, provided by the invention, has the advantages of simple steps and strong operability, and is suitable for industrial production; the prepared device has the advantages of simple structure, excellent performance, stability, good repeatability, sensitivity to environmental factors, good application prospect and worth of popularization in the industry.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.

Claims (9)

1. A preparation method of a memristor sensitive to environmental factors is characterized by comprising the following steps: the method specifically comprises the following steps:
s1: cleaning a substrate: cleaning and drying the substrate, and then putting the substrate into a magnetron sputtering chamber;
s2: sputter deposition of Cu2ZnSnSe4Film formation: cu is arranged on a magnetron sputtering target gun2ZnSnSe4A compound target material, wherein the atomic ratio of Cu, Zn, Sn and Se is 2:1:1:4, the target base distance is set to be 8-12cm, high-purity argon is introduced as working gas after the bottom of a magnetron sputtering chamber is vacuumized, the sputtering pressure is set to be 0.5-1.0 Pa,the substrate temperature is 200-300 ℃, and the sputtering power is 80-100W/cm2Sputtering for 20-30 min to obtain Cu2ZnSnSe4A film;
s3: sputter deposition of BiFeO3Film formation: after the step S2, BiFeO is mounted on the magnetron sputtering target gun3A compound target material, wherein the atomic ratio of Bi, Fe and O is 1:1:3, the target base distance is set to be 8-12cm, a magnetron sputtering chamber is vacuumized, high-purity argon is introduced to serve as working gas, the sputtering pressure is set to be 0.5-1.0 Pa, the substrate temperature is set to be room temperature, and the sputtering power is 80-100W/cm2Sputtering for 15-20 min to obtain BiFeO3A film;
s4: preparing an upper electrode: after the well-deposited BiFeO3And an upper electrode is deposited on the surface of the thin film, so that the memristor sensitive to environmental factors is obtained.
2. The method for preparing an environmental factor sensitive memristor according to claim 1, wherein: in step S1, the specific method for cleaning includes: and sequentially putting the substrate into deionized water, alcohol, acetone, alcohol and deionized water, respectively carrying out ultrasonic cleaning for 10-20 min, blow-drying the substrate by using nitrogen, and putting the substrate into a magnetron sputtering chamber.
3. The method for preparing an environmental factor sensitive memristor according to claim 1, wherein: in the step S2, the background vacuum degree of the magnetron sputtering chamber is pumped to 3.6 multiplied by 10-4Pa, and the purity of the high-purity argon is 99.999 percent.
4. The method for preparing an environmental factor sensitive memristor according to claim 1, wherein: in the step S3, the background vacuum degree of the magnetron sputtering chamber is pumped to 3.6 multiplied by 10-4Pa, and the purity of the high-purity argon is 99.999 percent.
5. The method for preparing an environmental factor sensitive memristor according to claim 1, wherein: in the step S4, BiFeO is deposited3The film surface is covered with holesAnd depositing an upper electrode on a metal mask plate with the diameter of 1mm by adopting a direct current sputtering method.
6. The method for preparing an environmental factor sensitive memristor according to claim 1, wherein: in the step S3, BiFeO3The thickness of the film is 150 to 200 nm.
7. The method for preparing an environmental factor sensitive memristor according to claim 1, wherein: in the step S2, Cu2ZnSnSe4The thickness of the film is 400 to 600 nm.
8. A method of making an environmentally sensitive memristor as in any of claims 1-7, wherein: the substrate is a substrate covered with an FTO film, and the substrate is flat glass or quartz.
9. A method of making an environmentally sensitive memristor as in any of claims 1-7, wherein: in step S4, silver is used as the upper electrode.
CN201811188337.4A 2018-10-12 2018-10-12 Preparation method of memristor sensitive to environmental factors Active CN109449287B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811188337.4A CN109449287B (en) 2018-10-12 2018-10-12 Preparation method of memristor sensitive to environmental factors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811188337.4A CN109449287B (en) 2018-10-12 2018-10-12 Preparation method of memristor sensitive to environmental factors

Publications (2)

Publication Number Publication Date
CN109449287A CN109449287A (en) 2019-03-08
CN109449287B true CN109449287B (en) 2020-04-07

Family

ID=65544854

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811188337.4A Active CN109449287B (en) 2018-10-12 2018-10-12 Preparation method of memristor sensitive to environmental factors

Country Status (1)

Country Link
CN (1) CN109449287B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110350052B (en) * 2019-07-16 2020-10-23 青岛科技大学 Film structure based on copper-zinc-tin-sulfur/bismuth-iron-chromium-oxygen material perovskite heterojunction
CN112951933A (en) * 2021-02-24 2021-06-11 青岛科技大学 Method for preparing copper-zinc-tin-sulfur/bismuth sulfide film heterojunction by room temperature pulse laser deposition method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107123648A (en) * 2017-04-12 2017-09-01 复旦大学 Read/write operation ferroelectricity memristor and preparation method thereof in a kind of face
CN108615810A (en) * 2018-04-10 2018-10-02 西南交通大学 A kind of memristor at room temperature and negative capacitance effect stablize the preparation method that device coexists

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053364B2 (en) * 2008-05-01 2011-11-08 Intermolecular, Inc. Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer
US9029985B2 (en) * 2013-05-23 2015-05-12 Los Alamos National Security, Llc Memristor comprising film with comb-like structure of nanocolumns of metal oxide embedded in a metal oxide matrix
CN108428700B (en) * 2018-03-15 2020-11-24 西南交通大学 Preparation method of device with stable coexistence of memristor and negative differential effect at room temperature

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107123648A (en) * 2017-04-12 2017-09-01 复旦大学 Read/write operation ferroelectricity memristor and preparation method thereof in a kind of face
CN108615810A (en) * 2018-04-10 2018-10-02 西南交通大学 A kind of memristor at room temperature and negative capacitance effect stablize the preparation method that device coexists

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Singlepairingspike-timing dependentplasticityinBiFeO3 memristorswithatimewindowof 25msto125μs";Nan Du等;《Frontiers in Neuroscience》;20150630;第9卷;第1-10页 *

Also Published As

Publication number Publication date
CN109449287A (en) 2019-03-08

Similar Documents

Publication Publication Date Title
US7749805B2 (en) Method for manufacturing an integrated circuit including an electrolyte material layer
CN108831992B (en) Resistive random access memory with hafnium-doped zinc oxide resistive layer and preparation method thereof
CN109449287B (en) Preparation method of memristor sensitive to environmental factors
JP2005521245A5 (en)
US20090045387A1 (en) Resistively switching semiconductor memory
CN111129299A (en) Ferroelectric memristor based on two-dimensional material and preparation method thereof
CN104425712B (en) The all-transparent resistance-variable storing device of a kind of rare earth oxide as accumulation layer and preparation method thereof
CN105529399B (en) A kind of resistive holder based on multi-element metal oxide film and preparation method thereof
Ruan et al. Resistive switching behavior of organic-metallic halide perovskites CH3NH3Pb1− xBixBr3
Park et al. Bifunctional Silver-Doped ZnO for Reliable and Stable Organic–Inorganic Hybrid Perovskite Memory
CN108428700B (en) Preparation method of device with stable coexistence of memristor and negative differential effect at room temperature
Kim et al. Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory
CN105161615A (en) Memristor based on fiber substrate and preparation method of memristor
CN102157692B (en) Organic resistive random access memory (RRAM) with peak shaped bottom electrode and manufacture method thereof
CN108666419B (en) Complementary resistive random access memory based on GeTe and preparation method thereof
CN112164749B (en) Bipolar resistive random access memory and preparation method thereof
Lee et al. Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem
CN109888090B (en) Memristor based on erbium oxide film and preparation method thereof
CN202977532U (en) Memristor based on Ge2Se2Te5
CN110289350B (en) Metal porphyrin heterojunction-based memristor and preparation method and application thereof
Silva et al. Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices
Ruan et al. Discrete resistive switching characteristics in metal-free phthalocyanine and Dy-phthalocyanine based devices
CN105185903B (en) A kind of preparation method of resistor-type memory cell
CN110190185B (en) Flexible device with memristor characteristic and diode behavior and preparation method thereof
CN109980082B (en) Resistive random access memory based on ZnMgO and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant