CN202977532U - Memristor based on Ge2Se2Te5 - Google Patents
Memristor based on Ge2Se2Te5 Download PDFInfo
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- CN202977532U CN202977532U CN 201220651429 CN201220651429U CN202977532U CN 202977532 U CN202977532 U CN 202977532U CN 201220651429 CN201220651429 CN 201220651429 CN 201220651429 U CN201220651429 U CN 201220651429U CN 202977532 U CN202977532 U CN 202977532U
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Abstract
The utility model provides a memristor based on Ge2Se2Te5. The memristor comprises an upper electrically-conductive electrode, an intermediate functional layer and a lower electrically-conductive electrode successively from up to bottom, wherein the intermediate functional layer adopts the Ge2Se2Te5 material. The memristor of the utility model can be used to perform stable and rapid high and low resistance switching in the condition of periodic positive and negative voltages, the memristor can be applied in future high-density and low-power nonvolatile memories; the device has advantage of simple preparation process, the GST is used as the functional material, so advantages of stable performance and low cost can be realized, and the requirement of mass production can be realized.
Description
Technical field
The utility model belongs to microelectronic material and field of semiconductor devices, is specifically related to a kind of based on chalcogenide compound Ge
2Se
2Te
5(GST) memristor.
Background technology
The theoretical existence of deriving memristor of Cai Shaotang professor of University of California Berkeley in 1971.Memristor is a kind of two novel end passive electronic components and parts except resistance, electric capacity, inductance, the quantity of electric charge that its electrical resistance flows through and changing.Memristor is in the potential advantages of the aspects such as integrated level, power consumption, speed, reliability, can satisfy large capacity, the low-power consumption development trend of novel electron storage medium and device, can substitute flash memory (flash), dynamic random access memory (DRAM), static RAM (SRAM), become high speed nonvolatile memory of future generation.The electric charge memory characteristic of memristor is very similar to the learning functionality of biological neuron cynapse, is the desirable electronic device of realizing cognitive storage, artificial intelligence.
The scientific research researcher rollout of Hewlett-Packard in 2008 have a Pt/TiO
2The memristor device of/Pt device architecture, this device cell is by two platinum electrodes and be clipped in interelectrode TiO
2Film consists of.Wherein, functional material is as the material of most critical, and is widely studied, and mainly concentrate on transition metal oxide, solid electrolyte and organic research, but these materials is not desirable memristor material, can't be widely used.
Research and develop new memristor functional material, make device have simultaneously the multiple advantage such as low in energy consumption, service speed is fast, high reliability, high density, low cost or have outstanding properties in one-sided application, become present urgent problem.
The utility model content
The purpose of this utility model relates to the application of GST material in memristor, and then provides a kind of and make that low in energy consumption, service speed is fast, the memristor based on GST of high reliability.
A kind of based on Ge
2Se
2Te
5Memristor, comprise successively from top to bottom conductive electrode, intermediate function layer and lower conductive electrode, the intermediate function layer adopts Ge
2Se
2Te
5Material.
Further, also comprise the electrode guide layer that is positioned at lower conductive electrode bottom.
Further, the thickness of described intermediate function layer is 10 ~ 50nm.
Further, the material of described top electrode is Ag, Ti, Cu, Ta, Pt, Au, Ti
3W
7In any one, the material of bottom electrode is Ag, Ti, Cu, Ta, Pt, Au, Ti
3W
7In any one.
Further, the material of described bottom electrode guide layer is any one of Pt, Ta, Cu.
Further, described upper conductive electrode material is Cu, and described lower conductive electrode material is Ag, has the better resistance characteristic of recalling.
Technique effect of the present utility model is embodied in: the utility model has proposed the memristor antetype device based on chalcogenide compound GST first, this memristor can be stablized under the generating positive and negative voltage of circulation, high low-resistance is switched fast, makes this device may be applied to the nonvolatile memory of following high density low-power consumption; And this device preparation technology is simple, and GST is low as functional material stable performance, cost, can satisfy the demand of following scale of mass production.
Description of drawings
Fig. 1 is the memristor longitudinal cross-section axially symmetric structure schematic diagram based on GST.
Fig. 2 is the current-voltage characteristic curve of semiconductor device under voltage drive that the utility model embodiment has the Cu/Ag/GST/Ag structure of recalling the resistance characteristic.Wherein, transverse axis represents voltage, and the longitudinal axis represents electric current.
Fig. 3 is the current-voltage characteristic curve of semiconductor device under voltage drive that the utility model embodiment has the Cu/Ag/GST/Cu structure of recalling the resistance characteristic.Wherein, transverse axis represents voltage, and the longitudinal axis represents electric current.
Embodiment
Phase transition storage exemplary functions material chalcogenide compound Ge
2Se
2Te
5(GST) when amorphous state, there are a large amount of defect states in inside, and these attitudes are to be produced by defective of different nature on structure, for example dangling bonds and room, and the formation of they and donor and acceptor's type trap is closely related.The conductive characteristic of amorphous semiconductor is determined by the defect state in these mobility gaps.
The utility model utilizes amorphous state chalcogenide compound Ge
2Se
2Te
5(GST) a large amount of defect state that has and unique electrology characteristic, and unordered spacial framework, the proposition of innovation is applied as the memristor material.The resistance characteristic of recalling that experiment showed, chalcogenide compound material GST does not rely on common phase transformation switch, but realizes the nonlinear change of resistance under lower operating voltage.The chalcogenide compound material GST that has just deposited is generally amorphous state, and when operating voltage was low, the heat of generation can only make material temperature slightly raise, but lower than crystallization temperature, does not cause material phase transformation, makes material remain on amorphous state.Memristor based on chalcogenide compound GST, deposit chalcogenide compound GST is as functional material, avoid higher operating voltage, material does not have the conversion between crystalline state and amorphous state, kept its service speed soon, the advantage that well non-volatile, fatigue resistance is strong, cost is low.
The utility model embodiment has proposed a kind of memristor device based on chalcogenide compound GST, and concrete structure comprises as shown in Figure 2 from top to bottom successively: upper conductive electrode 1, intermediate function material 2, lower conductive electrode 3, bottom electrode guide layer 4.In figure 5 represents silicon dioxide insulating layer, 6 expression silicon substrates.Wherein, the material of top electrode is Ag, Ti, Cu, Ta, Pt, Au, Ti
3W
7Deng any one in metal, thickness is between 50nm to 150nm.The material of bottom electrode is Ag, Ti, Cu, Ta, Pt, Au, Ti
3W
7Deng any one in metal, thickness is between 50nm to 150nm, and the material of bottom electrode guide layer is any one of the metals such as Pt, Ta, Cu, and thickness is between 50nm to 150nm.Middle functional material is GST, and thickness is between 10nm to 50nm.Intermediate function material and upper and lower electrode directly are electrically connected, and the bottom electrode guide layer plays the effect of drawing bottom electrode.
GST thin-film material provided by the utility model is not limited to this kind memristor structure, and every various cellular constructions for memristor can use.In fact, as long as have top electrode and bottom electrode, and fill the GST thin-film material just can consist of the memristor unit between electrode.In different structure, electrode structure and size can be different, the functional material of key, and namely the geometry of GST thin-film material provided by the utility model and size also can be different.This memristor unit can prepare separately, also can integrate with MOS, triode, diode and form array or memory.
GST thin-film material described in the utility model can by the method preparation of More target sputtering together, can obtain the component ratio of needs by regulating power corresponding to different targets.Described GST thin-film material also can be used the method preparation of the single target sputter of alloys target.Also can adopt any one preparation method in the methods such as chemical vapour deposition technique, evaporation, atomic layer deposition method or Laser deposition method.
In the single target sputter of the alloys target that the utility model provides prepares the method for GST, can adopt following preferred technological parameter: sputter GST alloys target power is 15～100W (further preferred value is 30W), and sputter Ar air pressure is that the further preferred value of 0.4Pa～0.6Pa(is 0.4Pa).
The utility model embodiment provides the preparation method based on four layers of sandwich structure memristor unit of GST, and its step is as follows:
1) at Si/SiO
2Spin coating photoresist AZ5214 on dielectric substrate 6/5 utilizes the performance of reversal photoresist and photoetching process to obtain bottom electrode guide layer figure;
2) utilize magnetically controlled sputter method deposit bottom electrode guide layer conductive metal film on the substrate of bottom electrode guide layer figure, form lower conduction guide layer 4 by stripping technology;
3) spin coating photoresist AZ5214 on the substrate of lower conductive electrode, utilize the performance of reversal photoresist and photoetching process to obtain bottom electrode and functional layer figure;
4) utilize magnetically controlled sputter method in conductive electrode and chalcogenide compound GST functional layer film under deposit successively on the functional layer figure, form bottom electrode 3 and functional layer 2 by stripping technology, with the GST film as the memristor functional layer;
5) spin coating photoresist AZ5214 on the substrate of lower conductive electrode and functional layer, utilize the performance of reversal photoresist and photoetching process to obtain conductive electrode patterns;
6) utilize magnetically controlled sputter method deposit top electrode conductive metal film on upper conductive electrode patterns, form upper conductive electrode 1 by stripping technology, complete the basic structure of whole device.
Embodiment 1: upper conductive electrode material is Ag, and thickness is 50nm; Lower conductive electrode material is Ag, and thickness is 100nm, and bottom electrode guide layer material is Cu, and thickness is 100nm; Functional material is GST, and thickness is 30nm.
Fig. 2 provided embodiment 1 memristor recall the resistance characteristic.From 0.52V begin until-0.2V, what resistance presented is low resistance state; Rise when voltage begins resistance to-0.26V, present high-impedance state, and be retained to voltage always and get back to the 0.25V left and right; When voltage surpassed 0.25V, resistance reduced.
Embodiment 2: upper conductive electrode material is Cu, and thickness is 100nm; Lower conductive electrode material is Ag, and thickness is 50nm, and bottom electrode guide layer material is Cu, and thickness is 150nm; Functional material is GST, and thickness is 50nm.
Fig. 3 provided embodiment 2 memristor recall the resistance characteristic.From 1.2V begin until-0.3V, resistance is in 260 about Ω, what present is low resistance state; When voltage begins resistance and suddenly rises to-0.35V, resistance value is 10
6More than Ω, and be retained to voltage always and get back to about 0.8V; When voltage surpassed 0.8V, resistance reduced suddenly, gets back to 1.2V to voltage, and resistance value is substantially constant, slowly is reduced to 270 Ω from 320 Ω.R
OFF/ R
ONCan reach 4000 when maximum.In embodiment 2, to be Cu have the better resistance characteristic of recalling with the lower conductive electrode material relative embodiment 1 of combination that is Ag to upper conductive electrode material.
Those skilled in the art will readily understand; the above is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (6)
1. one kind based on Ge
2Se
2Te
5Memristor, it is characterized in that, comprise successively from top to bottom conductive electrode, intermediate function layer and lower conductive electrode, the intermediate function layer adopts Ge
2Se
2Te
5Material.
2. memristor according to claim 2, is characterized in that, also comprises the bottom electrode guide layer that is positioned at lower conductive electrode bottom.
3. memristor according to claim 1 and 2, is characterized in that, described intermediate function layer is 10～50nm.
4. memristor according to claim 1 and 2, is characterized in that, the material of described upper conductive electrode is Ag, Ti, Cu, Ta, Pt, Au, Ti
3W
7In any one, the material of lower conductive electrode is Ag, Ti, Cu, Ta, Pt, Au, Ti
3W
7In any one.
5. memristor according to claim 1 and 2, is characterized in that, described upper conductive electrode material is Cu, and described lower conductive electrode material is Ag.
6. memristor according to claim 2, is characterized in that, the material of described bottom electrode guide layer is any one of Pt, Ta, Cu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220651429 CN202977532U (en) | 2012-11-30 | 2012-11-30 | Memristor based on Ge2Se2Te5 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220651429 CN202977532U (en) | 2012-11-30 | 2012-11-30 | Memristor based on Ge2Se2Te5 |
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| Publication Number | Publication Date |
|---|---|
| CN202977532U true CN202977532U (en) | 2013-06-05 |
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|---|---|---|---|
| CN 201220651429 Expired - Lifetime CN202977532U (en) | 2012-11-30 | 2012-11-30 | Memristor based on Ge2Se2Te5 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247756A (en) * | 2013-04-10 | 2013-08-14 | 华中科技大学 | Memristor and manufacture method thereof |
| CN108110136A (en) * | 2015-12-25 | 2018-06-01 | 山东科技大学 | A kind of preparation method of individual layer resistive film memristor |
-
2012
- 2012-11-30 CN CN 201220651429 patent/CN202977532U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247756A (en) * | 2013-04-10 | 2013-08-14 | 华中科技大学 | Memristor and manufacture method thereof |
| CN108110136A (en) * | 2015-12-25 | 2018-06-01 | 山东科技大学 | A kind of preparation method of individual layer resistive film memristor |
| CN108110136B (en) * | 2015-12-25 | 2021-03-12 | 山东科技大学 | Preparation method of single-layer resistive film memristor |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130605 |
|
| CX01 | Expiry of patent term |