CN101315811B - Dynamic phase-change memory - Google Patents
Dynamic phase-change memory Download PDFInfo
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- CN101315811B CN101315811B CN2008100408513A CN200810040851A CN101315811B CN 101315811 B CN101315811 B CN 101315811B CN 2008100408513 A CN2008100408513 A CN 2008100408513A CN 200810040851 A CN200810040851 A CN 200810040851A CN 101315811 B CN101315811 B CN 101315811B
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Abstract
The invention discloses a dynamic phase transition memory. A storage medium of the memory adopts a phase-change material with lower melting point and lower crystallizing temperature; the melting point of the phase-change material is between 200 DEG C and 640 DEG C, and the crystallizing temperature thereof is between 40 DEG C and 120 DEG C. The memory also comprises a regular refreshing module used for carrying out data refreshing for a memory unit storing high resistance condition regularly, and resetting the memory unit storing lower resistance to the memory unit storing the high resistance condition. The memory carries out programming to a component with lower power consumption. The dynamic phase transition memory provided by the invention causes the dynamic random memory component to greatly reduce the number of times of needed refreshing, and has lower power consumption compared with the traditional PCRAM; simultaneously as the small signal is adopted to carry out programming, the fatigue character of the dynamic phase transition memory is greatly improved.
Description
Technical field
The invention belongs to technical field of semiconductor memory, relate to a kind of storer, relate in particular to a kind of dynamic phase-change memory of low-power consumption.
Background technology
Semiconductor memory is the basis of infotech, has the market of hundreds billion of U.S. dollars in the world.As the most promising candidate of the general nonvolatile semiconductor memory of the next generation, phase transition storage (PCRAM) has obtained paying close attention to widely, and it is about to part and replaces flash memory (Flash), thereby becomes one of most important semiconductor memory.
But, the shortcoming of PCRAM is the programming power consumption that it is higher relatively, because in the RESET process, (be converted to high resistance from low resistance, be amorphous promptly) from polymorphic transformation, storer need be heated to the phase-change material in the storer more than the fusing point by the electric pulse of big power consumption, and then make it decrystallized by the process of quenching, obtain high-resistance state, and only need in the SET process to be heated to more than the Tc, so the power consumption of SET will Figure 1 shows that the programming process of PCRAM unit much smaller than the RESET process; The erasable number of times of PCRAM device is limited, is about 10
8About inferior, this is because adopted the cause of bigger power consumption in the device to a great extent, the high heat that produces in the RESET programming process makes that the interface of phase-change material and heating electrode and oxide more easily produces influences such as diffusion among the PCRAM, finally had influence on the fatigue properties of device, limited erasable number of times is the major reason that PCRAM can't replace dynamic RAM (DRAM) fully; In addition, the PCRAM program rate is compared relatively slow with DRAM, and this is PCRAM will substitute DRAM in future an another one obstacle.
Position up till now, DRAM because its at a high speed and advantage such as durable still in infotech, play an important role, be the parts that can not lack in many electronic equipments, DRAM in a very long time, also will bring into play important about.For example in the internal memory of computing machine, its effect still can not substitute, and has fast speeds because DRAM compares hard disk, lower power consumption, and low price.And the principle of DRAM has determined will refresh the data of storing in the device to the process that reads of device information, and the data in the storage unit often can only keep tens of ms, must refresh on time, otherwise data will be lost, so, have programming time of nearly 1% will be used for the unit is carried out Refresh Data among the DRAM.
If can invent a kind of memory technology between phase transition storage and DRAM, it will occupy important one seat in storage market.The characteristics of this desirable technique are to have lower power consumption, fast speeds than PCRAM, and have long data hold time than DRAM, so just can significantly reduce the number of times that refreshes, thereby significantly reduce device power consumption.Below, the range of application and the prospect of this kind of explanation memory technology of giving an example:
Google has created the miracle of Internet technology as the model of search engine, in these similar search engines, the search of data mainly is reading database, in search procedure, the required a large amount of power consumption of computer run and the expenditure of the huge electricity charge that produce becomes one of most important cost of search engine companies, and the major part of these power consumptions comes from the work of storer, the particularly consumption of DRAM: because ceaselessly have the request of reading of data library information to finish search mission, and wherein, DRAM constantly refreshes the major part that required power consumption has occupied total power consumption.
Summary of the invention
Technical matters to be solved by this invention is: the dynamic phase-change memory that a kind of low-power consumption is provided.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of dynamic phase-change memory, the storage medium of described storer adopt to have than low melting point and more low-freeing phase-change material; The fusing point of described phase-change material is between 200 ℃ to 640 ℃, and its Tc is between 40 ℃ to 120 ℃; Described storer comprises the periodic refresh module, and in order to termly the storage unit that stores high-resistance state is carried out Refresh Data, the unit that resistance is descended is reset to high-resistance state.
As a preferred embodiment of the present invention, the fusing point of described phase-change material is between 200 ℃ to 500 ℃.
As a preferred embodiment of the present invention, the power consumption of described storer is less than 20mW; Preferably, the power consumption of storer is less than 10mW.
As a preferred embodiment of the present invention, described phase-change material is realized the reversible variation between high resistance and the low resistance under action of electric signals.
As a preferred embodiment of the present invention, described phase-change material is SbTe alloy material or AgInSbTe alloy or Sb material or doping or Sn based phase-change material or GeSbTe alloy that the Sb material is carried out.
As a preferred embodiment of the present invention, described storer is the twin-stage storage, or is multistage storage.
Beneficial effect of the present invention is: the dynamic phase-change memory that the present invention proposes makes dynamic RAM spare greatly reduce the required number of times that refreshes, and compares with traditional PCRAM and to have lower power consumption; Simultaneously owing to adopting small-signal to programme, so the fatigue properties of dynamic phase-change memory are greatly improved.The storer of this low-power consumption has broad application prospects advocating the energy-conservation epoch at present.In addition, greater advantage is arranged also in such as application such as portable sets, under the prerequisite that does not increase battery capacity, will significantly prolong the service time of equipment.
Description of drawings
Fig. 1 is the structural representation of dynamic phase-change memory.
Fig. 2 A is the storage unit sectional view that is in complete polycrystalline state.
Fig. 2 B is the device cell sectional view after RESET.
Fig. 3 is that the RESET process of dynamic phase-change memory and traditional phase transition storage compares synoptic diagram.
Fig. 4 is that the high temperature data holding ability of dynamic phase-change memory and traditional phase transition storage compares synoptic diagram.
Fig. 5 changes synoptic diagram in time for the state of dynamic phase-change memory.
Embodiment
Describe the preferred embodiments of the present invention in detail below in conjunction with accompanying drawing.
The object of the present invention is to provide a kind of novel storer---dynamic phase-change memory, it is to utilize the reversible variation of phase-change material between high resistance and low resistance to realize the storage of data.The difference of dynamic phase-change memory and traditional phase transition storage is: dynamic phase-change memory adopts has more low-melting phase-change material as storage medium, therefore, in RESET (decrystallized) process, only need provide a more weak electric signal, just can realize the programming operation of device.Have more low-melting phase-change material and can have lower Tc generally speaking, and having lower Tc, storage medium will make it that crystallization can relatively easily take place in environment temperature, thereby cause the progressively decline of device resistance, and then can cause losing of canned data in the storer, so need carry out regular Refresh Data to storer.
The fusing point of described phase-change material is between 200 ℃ to 640 ℃, and its Tc is between 40 ℃ to 120 ℃.Phase-change material is SbTe alloy material or AgInSbTe alloy or Sb material or doping or Sn based phase-change material or GeSbTe alloy that the Sb material is carried out.In the present embodiment, the fusing point of phase-change material can be 420 ℃, 450 ℃, 480 ℃, 500 ℃ between 350 ℃-540 ℃; Its Tc can be 75 ℃, 80 ℃, 91 ℃, 95 ℃, 99 ℃ between 70 ℃ to 100 ℃.
Described storer comprises the periodic refresh module, and in order to termly the storage unit that stores high-resistance state is carried out Refresh Data, the unit that resistance is descended is reset to high-resistance state.
Dynamic phase-change memory has lower power consumption (less than 10mW, as 3mW, 5mW, 7mW) than phase transition storage, but since the device data hold facility a little less than, so need regular refreshing; Dynamic phase-change memory is than DRAM, its required refreshing frequency still less, total power consumption is lower, makes dynamic phase-change memory can substitute the function of DRAM, thereby in the application of low-power consumption important application prospects is arranged.
[manufacturing process]
See also Fig. 1, Fig. 1 has introduced the manufacturing process of storer of the present invention.
Utilize semiconductor technology to utilize thermal oxide to produce the insulating layer of silicon oxide 15 of thickness for 600nm on silicon substrate 14, subsequently, adopting the magnetron sputtering method deposit thickness is the Al public electrode 16 of 200nm.After making aluminum conductor by lithography, adopt vapour deposition process silicon oxide layer deposited 17 above the aluminium electrode, adopt photoetching process to form hole in silicon oxide layer, diameter is 260nm.Vapour deposition W material forms the W bolt after the process chemically mechanical polishing planarization subsequently.The depositing silicon doping is the Sb material 12 and the TiN electrode 13 of one of percentage atomic ratio successively, and the method for employing is magnetron sputtering method, and the thickness of double-layer films is respectively 100nm and 30nm.The Sb material 12 and the TiN electrode 13 of silicon mixed in photoetching, fills monox 19, through the chemically mechanical polishing planarization, removes the monox that covers TiN electrode 13 tops.The depositing Al top electrode, thickness is 300nm, after the photoetching, draws storage unit top electrode 20 and public aluminium electrode 21 respectively, the schematic cross-section of the resistor conversion memory cell device that finally obtains is as shown in Figure 1.
[programmed method]
Introduce the programmed method of storer of the present invention below in conjunction with Fig. 2 A and Fig. 2 B.Above manufacturing process and traditional phase transition storage are similar, and programming process is shown in Fig. 2 A and 2B.Utilize heating electrode 11 phase-change material in the storage unit 12 to be programmed, form amorphous (12A) or polycrystalline structure 12 by electric pulse.Among Fig. 2 B, gray areas is a non-crystallization region.
Dotted line shown in Figure 3 is exactly the programming curve of dynamic phase-change memory, and is exactly the programming curve of traditional phase transition storage shown in the solid line.Because dynamic phase-change memory adopts the lower phase-change material of fusing point, so RESET voltage V
1Will be far below the V of conventional P CRAM
2Dynamic phase-change memory adopts low-melting phase-change material, so have lower program voltage.
[data holding ability test]
Main test is in the variation tendency of resistance in the high-temperature baking process of device, as shown in Figure 4.In traditional phase transition storage, because the phase-change material Tc that adopts is higher, so resistance decline is slower, out-of-service time T
F2Will be longer; And the Tc owing to phase-change material is lower in dynamic phase-change memory, and data holding ability is relatively poor, so out-of-service time T
F1Will be less than T
F2Hence one can see that, and dynamic phase-change memory need be at T
F1Carry out refreshing of data before, make the resistance of device come back to high-impedance state.
[refreshing of data]
Data are in the preservation process, because data have two states, if just there is not the problem of data failure in low resistance state; And if high-impedance state, resistance value can descend along with the increase of time, and (time has surpassed out-of-service time T in other words below the certain standard when resistance drops to
F1The time), at this moment, just need the data of this element be reset to high-impedance state by an electric signal, the process that refreshes is as shown in Figure 5.
Along with the variation of time in the use, the resistance value of high-impedance state descends gradually, when dropping to failure criteria, just need make storage unit reach high-impedance state again with a signal that refreshes.
Above embodiment is the unrestricted technical scheme of the present invention in order to explanation only.Any modification or partial replacement that does not break away from spirit and scope of the invention all should be encompassed in the middle of the claim scope of the present invention.
Claims (7)
1. dynamic phase-change memory is characterized in that: the storage medium of described storer adopt fusing point between 200 ℃ to 640 ℃, the phase-change material of Tc between 40 ℃ to 120 ℃; Described storer comprises the periodic refresh module, and in order to termly the storage unit that stores high-resistance state is carried out Refresh Data, the unit that resistance is descended is reset to high-resistance state.
2. dynamic phase-change memory according to claim 1 is characterized in that: the fusing point of described phase-change material is between 200 ℃ to 500 ℃.
3. dynamic phase-change memory according to claim 1 is characterized in that: described storer is programmed to device less than the power consumption of 20mW with power consumption.
4. dynamic phase-change memory according to claim 3 is characterized in that: the power consumption of described storer is less than 10mW.
5. dynamic phase-change memory according to claim 1 is characterized in that: described phase-change material is realized the reversible variation between high resistance and the low resistance under action of electric signals.
6. dynamic phase-change memory according to claim 1 is characterized in that: described phase-change material is SbTe alloy material or AgInSbTe alloy or Sb material or doping or Sn based phase-change material or GeSbTe alloy that the Sb material is carried out.
7. dynamic phase-change memory according to claim 1 is characterized in that: described storer is the twin-stage storage, or is multistage storage.
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| CN101989183A (en) * | 2010-10-15 | 2011-03-23 | 浙江大学 | Method for realizing energy-saving storing of hybrid main storage |
| CN105138472B (en) * | 2014-06-06 | 2018-06-26 | 华为技术有限公司 | Flash memory abrasion optimization method and equipment |
| CN105514266B (en) * | 2015-12-03 | 2018-04-20 | 江苏理工学院 | Rear-earth-doped Sb bases phase change film material and method for manufacturing thin film |
| CN108075038A (en) * | 2016-11-11 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | Dynamic RAM and forming method thereof |
| CN107819069B (en) * | 2017-10-30 | 2019-07-12 | 清华大学 | The memory that phase-change memory cell and the unit based on nanometer liquid metallic particles are constituted |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351379A (en) * | 2000-10-27 | 2002-05-29 | 松下电器产业株式会社 | Memory recording device, reading-out device, recording and reading-out devices |
| CN101049934A (en) * | 2007-04-29 | 2007-10-10 | 中国科学院上海微系统与信息技术研究所 | Storage material without tellurium, preparation method and application |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1351379A (en) * | 2000-10-27 | 2002-05-29 | 松下电器产业株式会社 | Memory recording device, reading-out device, recording and reading-out devices |
| CN101049934A (en) * | 2007-04-29 | 2007-10-10 | 中国科学院上海微系统与信息技术研究所 | Storage material without tellurium, preparation method and application |
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