CN111129299A - Ferroelectric memristor based on two-dimensional material and preparation method thereof - Google Patents
Ferroelectric memristor based on two-dimensional material and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a ferroelectric memristor based on a two-dimensional material and a preparation method thereof, the ferroelectric memristor is arranged on a substrate, the ferroelectric memristor comprises a top electrode, a resistance change layer and a bottom electrode which are sequentially arranged from top to bottom, the resistance change layer comprises a dielectric layer and an MXene material film laid above the ferroelectric material dielectric layer, the top electrode is sputtered on the top of the MXene material film through an opening of a mask plate, the bottom electrode comprises a top and a bottom, the top of the top electrode is in contact with the dielectric layer, and the bottom of the top electrode is in contact with the substrate. The ferroelectric memristor has good conductivity and stability, more stable resistance state, wide application prospect and can be used for multi-value storage; in addition, the preparation method is simple, convenient, efficient, low in cost and suitable for industrial popularization and use.
Description
Technical Field
The invention relates to a ferroelectric memristor based on a two-dimensional material and a preparation method thereof, and can be used in the technical field of brain-like devices.
Background
The memristor is a fourth kind of passive element except for resistance, capacitance and inductance, and is a passive circuit element related to magnetic flux and electric charge. As early as 1971, the theoretical pioneers of international nonlinear circuits and cellular neural networks: the Chua begonia is based on a circuit theory, and theoretically predicts the existence of a memristor. In 2008, a memristor prototype device is first constructed experimentally in a Hewlett packard laboratory, and the theory of the Chua begonia on the memristor is verified. The memristor has novel nonlinear electrical properties, has the characteristics of high density, small size, low power consumption, non-volatility and the like, and is considered as an ideal scheme for developing a next generation of novel non-volatile memory.
As a two-port nonlinear passive electronic device based on a resistance transition effect, the memristor can memorize the amount of electric charge flowing through, has the characteristics of simple structure, easy integration, high erasing and writing speed, low power consumption and the like, has stronger expandability and 3D stacking capability, and has the characteristic similar to a nerve synapse pole, so that the memristor has a larger application prospect in the aspects of a next-generation nonvolatile memory and a neural network. The nonvolatile memory has the characteristics of high erasing speed, low power consumption and multi-value storage, and can realize high-density storage by adopting a cross array structure.
The ferroelectric material is a pyroelectric material with wide application, and has the characteristics of spontaneous polarization and electric hysteresis loop, so that the material has wide application in the aspects of memory devices, optical detection and imaging.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a ferroelectric memristor based on a two-dimensional material and a preparation method thereof.
The purpose of the invention is realized by the following technical scheme: the ferroelectric memristor based on the two-dimensional material is arranged on a substrate and comprises a top electrode, a resistance change layer and a bottom electrode which are sequentially arranged from top to bottom, wherein the resistance change layer comprises a dielectric layer and an MXene material film laid above the ferroelectric material dielectric layer, the top electrode is sputtered on the top of the MXene material film through an opening of a mask plate, the bottom electrode comprises a top and a bottom, the top of the top electrode is in contact with the dielectric layer, and the bottom of the top electrode is in contact with the substrate.
Preferably, the shape and the size of the resistance change layer and the substrate are matched one by one.
Preferably, the dielectric layer is a ferroelectric material dielectric layer, and the thickness of the ferroelectric material dielectric layer is 40 nm.
Preferably, the top electrode has a thickness of 100nm, and the top electrode is one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten, and tungsten nitride.
Preferably, the thickness of the bottom electrode is 90nm, and the bottom electrode is one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride.
Preferably, the substrate is a silicon substrate layer.
The invention discloses a preparation method of a ferroelectric memristor based on a two-dimensional material, which comprises the following steps:
s1: bottom electrode deposition; fixing the substrate on a target gun of a sputtering system in a vacuum environment, selecting a bottom electrode material as a sputtering source, and depositing a bottom electrode by a magnetron sputtering instrument to ensure that the bottom electrode uniformly and completely covers the upper surface of the substrate;
s2: sputtering a dielectric layer; maintaining the vacuum environment in the step S1, replacing the dielectric layer sputtering source, and uniformly and completely sputtering the dielectric layer on the upper surface of the bottom electrode;
s3: preparing MXene suspension; mixing MXene and deionized water according to a certain mass ratio, and stirring for a certain time to obtain an MXene suspension;
s4: preparing a resistance change layer; sucking the supernatant turbid liquid of the MXene turbid liquid obtained in the step S3, dripping the supernatant turbid liquid on the medium layer obtained in the step S2, and spin-coating for a certain time through a spin coater to enable the upper surface of the medium layer to be uniformly covered with a layer of MXene material film to obtain a resistance change layer;
s5: sputtering a top electrode; and drying the resistance-change layer prepared by spin coating in the step S4, fixing the dried layer on a sputtering target gun, installing a mask plate on the top of the resistance-change layer, selecting a sputtering source made of a top electrode material, and performing sputtering deposition to obtain a top electrode, thereby preparing and obtaining the novel ferroelectric memristor based on the material.
Preferably, in the step S3, mixing MXene and deionized water according to a mass ratio of 10mg/ml, and stirring for 5min to 15min to obtain an MXene suspension; and in the step S4, dripping the solution on the dielectric layer obtained in the step S2, and spin-coating for 1min-3min by a spin coater to uniformly cover a layer of MXene material film on the upper surface of the dielectric layer to obtain the resistive layer, wherein the rotation speed of the spin coater is 1500 r/min.
Preferably, in step S1, fixing the silicon substrate on a target gun of a sputtering system in a vacuum environment, selecting platinum as a sputtering source, and depositing by a magnetron sputtering apparatus to obtain a platinum electrode with a thickness of 100nm, wherein the platinum electrode is uniformly and completely covered on the upper surface of the silicon substrate;
in the step S2, the vacuum environment in the step S1 is kept, the ferroelectric material is replaced to be used as a sputtering source, and a ferroelectric material dielectric layer with the thickness of 40nm is uniformly and completely sputtered on the upper surface of the platinum electrode;
in the step S3, MXene and deionized water are mixed according to the mass ratio of 10mg/ml, and stirred for 10min to prepare MXene suspension.
Preferably, in the step S4, the turbid supernatant of the MXene suspension in the step S3 is absorbed and dropped on the ferroelectric medium layer, spin-coating is performed on the ferroelectric medium layer for 2min by a spin coater, and the rotating speed of the spin coater is 1500r/min, so that the upper surface of the ferroelectric medium layer is uniformly covered with an MXene material film, and the resistive layer is prepared;
in the step S5, drying the resistance-change layer prepared by spin coating in the step S4, fixing the dried layer on a sputtering target gun, installing a mask plate on the top of the resistance-change layer, selecting copper as a sputtering source, and performing sputtering deposition to obtain a copper electrode with the thickness of 100nm, thereby preparing the memristor with the structure of copper/MXene/ferroelectric layer/platinum.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects: the ferroelectric memristor has good conductivity and stability, more stable resistance state, wide application prospect and can be used for multi-value storage; in addition, the preparation method is simple, convenient, efficient, low in cost and suitable for industrial popularization and use.
According to the technical scheme, the resistance layer is formed by covering the MXene material film on the ferroelectric material dielectric layer, the MXene material film is clustered on the surface of the ferroelectric material and is combined with the ferroelectric material dielectric layer to form the hybrid unit, growth of a conductive filament is facilitated, according to a conductive filament model of the resistance device, the MXene material film improves conductivity and stability of the resistance layer and the whole memristor, so that the resistance state of the memristor is more stable and can be used for multi-value storage, and the application prospect is wide.
Drawings
FIG. 1 is a schematic structural diagram of a ferroelectric memristor device based on a two-dimensional material.
Fig. 2 is a schematic structural diagram of a ferroelectric memristor device of the present disclosure.
FIG. 3 is a flow chart for manufacturing a ferroelectric memristive device of the present disclosure.
FIG. 4 is an I-V curve graph formed by device memristive characteristics of the ferroelectric memristive device of the present invention under a current limit of 10 uA.
FIG. 5 is a typical I-V characteristic curve for 10uA current limiting ferroelectric memristive devices of the present disclosure.
FIG. 6 is an I-V characteristic curve diagram of 5 cycles under 10uA current limiting of the ferroelectric memristor device of the present invention.
FIG. 7 is a time length graph of a resistance holding characteristic under a V voltage of the ferroelectric memristive device of the present disclosure.
Detailed Description
Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. The embodiments are merely exemplary for applying the technical solutions of the present invention, and any technical solution formed by replacing or converting the equivalent thereof falls within the scope of the present invention claimed.
The invention discloses a ferroelectric memristor based on a two-dimensional material and a preparation method thereof, and as shown in fig. 1, fig. 2 and fig. 3, the ferroelectric memristor based on the two-dimensional material is arranged on a substrate 5, the ferroelectric memristor comprises a top electrode 1, a resistance change layer and a bottom electrode 4 which are sequentially arranged from top to bottom, and the shapes and the sizes of the resistance change layer and the bottom electrode 4 are matched with those of the substrate 5 one by one.
The resistance change layer comprises a dielectric layer 3 and an MXene material film 2 laid above the ferroelectric material dielectric layer, the top electrode is sputtered on the top of the MXene material film through an opening of a mask plate, the bottom electrode 4 comprises a top part and a bottom part, and the top part and the bottom part of the top electrode are respectively in contact with the dielectric layer and the substrate. The resistance change layer is used for realizing the conversion between resistance states and comprises a dielectric layer 3 and an MXene material film 2 which is uniformly and completely covered and laid above the dielectric layer 3.
The dielectric layer 3 is a ferroelectric material dielectric layer, the thickness of the ferroelectric material dielectric layer is 40nm, and the ferroelectric material dielectric layer is also prepared by a PVD method. The thickness of the top electrode is 100nm, and the top electrode is sputtered on the top of the MXene material film through the opening of the mask plate; the top electrode and the bottom electrode are used for being electrically connected with an external power supply, the materials of the top electrode and the bottom electrode can be the same or different, and the top electrode and the bottom electrode are both prepared by a Physical Vapor Deposition (PVD) method. The top electrode is one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride. The thickness of the bottom electrode is 90nm, and the bottom electrode is one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride. The substrate 5 is a silicon substrate layer.
The invention also discloses a preparation method of the ferroelectric memristor based on the two-dimensional material, which comprises the following steps:
s1: fixing the substrate on a target gun of a sputtering system in a vacuum environment, selecting a bottom electrode material as a sputtering source, and depositing a bottom electrode by a magnetron sputtering instrument to ensure that the bottom electrode uniformly and completely covers the upper surface of the substrate;
s2: maintaining the vacuum environment in the step S1, replacing the dielectric layer sputtering source, and uniformly and completely sputtering the dielectric layer on the upper surface of the bottom electrode;
s3: mixing MXene and deionized water according to a certain mass ratio, and stirring for a certain time to obtain an MXene suspension;
s4: sucking the supernatant turbid liquid of the MXene turbid liquid obtained in the step S3, dripping the supernatant turbid liquid on the medium layer obtained in the step S2, and spin-coating for a certain time through a spin coater to enable the upper surface of the medium layer to be uniformly covered with a layer of MXene material film to obtain a resistance change layer;
s5: and drying the resistance-change layer prepared by spin coating in the step S4, fixing the dried layer on a sputtering target gun, installing a mask plate on the top of the resistance-change layer, selecting a sputtering source made of a top electrode material, and performing sputtering deposition to obtain a top electrode, thereby preparing and obtaining the novel ferroelectric memristor based on the material.
Mixing MXene and deionized water according to the mass ratio of 10mg/ml in the step of S3, and stirring for 5-15 min to prepare MXene suspension; and in the step S4, dripping the solution on the dielectric layer obtained in the step S2, and spin-coating for 1min-3min by a spin coater to uniformly cover a layer of MXene material film on the upper surface of the dielectric layer to obtain the resistive layer, wherein the rotation speed of the spin coater is 1500 r/min.
Example 1: a preparation method of a memristor device with a structure of copper/MXene/ferroelectric material/platinum specifically comprises the following steps: in the step S1, fixing the silicon substrate on a target gun of a sputtering system in a vacuum environment, selecting platinum as a sputtering source, and depositing by a magnetron sputtering instrument to obtain a platinum electrode with the thickness of 100nm, wherein the platinum electrode is uniformly and completely covered on the upper surface of the silicon substrate;
in the step S2, the vacuum environment in the step S1 is kept, the ferroelectric material is replaced to be used as a sputtering source, and a ferroelectric material dielectric layer with the thickness of 40nm is uniformly and completely sputtered on the upper surface of the platinum electrode;
in the step S3, MXene and deionized water are mixed according to the mass ratio of 10mg/ml, and stirred for 10min to prepare MXene suspension.
In the step S4, the supernatant of the MXene suspension in the step S3 is sucked and dropped on the ferroelectric medium layer, and spin coating is carried out on the ferroelectric medium layer for 2min through a spin coater, wherein the rotating speed of the spin coater is 1500r/min, so that the upper surface of the ferroelectric medium layer is uniformly covered with an MXene material film, and the resistance change layer is prepared.
In the step S5, drying the resistance-change layer prepared by spin coating in the step S4, fixing the dried layer on a sputtering target gun, installing a mask plate on the top of the resistance-change layer, selecting copper as a sputtering source, and performing sputtering deposition to obtain a copper electrode with the thickness of 100nm, thereby preparing the memristor with the structure of copper/MXene/ferroelectric layer/platinum.
FIG. 4 is a forward V-I characteristic curve of the memristor of the present invention during a first SET at a current limit of 1 uA. In the first SET process, the voltage sweep is from 0V to 20V, after the extreme value of 20V is reached, the voltage for limiting the current of the device is about 18V, the device can keep stable resistance value through the SET engineering, and the device returns to a high-resistance state in the RESET process, wherein the abscissa in the graph 4 is voltage and the ordinate is current.
Fig. 5 is an I-V characteristic curve in a normal cycle, in fig. 5, the abscissa is voltage and the ordinate is current. Fig. 6 is an I-V characteristic graph obtained by repeating the 100uA amplitude limiting process 5 times, where the abscissa in fig. 6 is voltage and the ordinate is current, and it can be found from fig. 6 that after the first SET and RESET processes, the SET voltage of the memristor of the present invention is greatly reduced, and is maintained below 3V, and meanwhile, the low resistance state of the memristor is maintained at 1300 Ω, and during the reverse RESET process, the voltage returning to the high resistance state is stabilized within 1.5V. The memristor has high stability, and each I-V curve is approximately the same.
Fig. 7 shows the resistance value maintaining time of the memristor in the high-resistance state and the low-resistance state, wherein under the action of a small voltage, the high-resistance value and the low-resistance value (about 1300 Ω) of the memristor in the high-resistance state can last for more than 2000 seconds, the high-resistance value (about 10^8 Ω) can last for more than 2000 seconds, and the duration time can be further prolonged, and the abscissa of fig. 7 is voltage and the ordinate is current. Fig. 4 to 7 show that the resistance state of the memristive device is stable. FIG. 7 shows that the high resistance of the memristor is 10^8 Ω, the low resistance of the memristor is about 10^3 Ω, and the on-off ratio is 10^5, which indicates that the memristor has better switching characteristics.
The ferroelectric memristor has good conductivity and stability, more stable resistance state, wide application prospect and can be used for multi-value storage; in addition, the preparation method of the memristor is simple, convenient and efficient, has low cost, and can be widely applied to industrial production.
The invention has various embodiments, and all technical solutions formed by adopting equivalent transformation or equivalent transformation are within the protection scope of the invention.
Claims (10)
1. A ferroelectric memristor device based on two-dimensional materials is characterized in that: the ferroelectric memristor is arranged on a substrate (5), and comprises a top electrode (1), a resistance-change layer and a bottom electrode (4) which are sequentially arranged from top to bottom, wherein the resistance-change layer comprises a dielectric layer (3) and an MXene material film (2) laid above the ferroelectric material dielectric layer, the top electrode is sputtered on the top of the MXcene material film through an opening of a mask plate, the bottom electrode (4) comprises a top part and a bottom part, the top part of the top electrode is in contact with the dielectric layer, and the bottom part of the top electrode is in contact with the substrate.
2. A ferroelectric memristive device based on two-dimensional materials as in claim 1, wherein: the shape and the size of the resistance change layer, the bottom electrode (4) and the substrate (5) are matched one by one.
3. A ferroelectric memristive device based on two-dimensional materials as in claim 1, wherein: the dielectric layer (3) is a ferroelectric material dielectric layer, and the thickness of the ferroelectric material dielectric layer is 40 nm.
4. A ferroelectric memristive device based on two-dimensional materials as in claim 1, wherein: the thickness of the top electrode is 100nm, and the top electrode is one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride.
5. A ferroelectric memristive device based on two-dimensional materials as in claim 1, wherein: the thickness of the bottom electrode is 90nm, and the bottom electrode is one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride.
6. A ferroelectric memristive device based on two-dimensional materials as in claim 1, wherein: the substrate is a silicon substrate layer.
7. A preparation method of a ferroelectric memristor based on a two-dimensional material is characterized by comprising the following steps: the method comprises the following steps:
s1: bottom electrode deposition; fixing the substrate on a target gun of a sputtering system in a vacuum environment, selecting a bottom electrode material as a sputtering source, and depositing a bottom electrode by a magnetron sputtering instrument to ensure that the bottom electrode uniformly and completely covers the upper surface of the substrate;
s2: sputtering a dielectric layer; maintaining the vacuum environment in the step S1, replacing the dielectric layer sputtering source, and uniformly and completely sputtering the dielectric layer on the upper surface of the bottom electrode;
s3: preparing MXene suspension; mixing MXene and deionized water according to a certain mass ratio, and stirring for a certain time to obtain an MXene suspension;
s4: preparing a resistance change layer; sucking the supernatant turbid liquid of the MXene turbid liquid obtained in the step S3, dripping the supernatant turbid liquid on the medium layer obtained in the step S2, and spin-coating for a certain time through a spin coater to enable the upper surface of the medium layer to be uniformly covered with a layer of MXene material film to obtain a resistance change layer;
s5: sputtering a top electrode; and drying the resistance-change layer prepared by spin coating in the step S4, fixing the dried layer on a sputtering target gun, installing a mask plate on the top of the resistance-change layer, selecting a sputtering source made of a top electrode material, and performing sputtering deposition to obtain a top electrode, thereby preparing and obtaining the novel ferroelectric memristor based on the material.
8. The method for preparing a ferroelectric memristor device based on a two-dimensional material according to claim 7, wherein: mixing MXene and deionized water according to the mass ratio of 10mg/ml in the step of S3, and stirring for 5-15 min to prepare MXene suspension; and in the step S4, dripping the solution on the dielectric layer obtained in the step S2, and spin-coating for 1min-3min by a spin coater to uniformly cover a layer of MXene material film on the upper surface of the dielectric layer to obtain the resistive layer, wherein the rotation speed of the spin coater is 1500 r/min.
9. The method for preparing a ferroelectric memristor device based on a two-dimensional material according to claim 7, wherein:
in the step S1, fixing the silicon substrate on a target gun of a sputtering system in a vacuum environment, selecting platinum as a sputtering source, and depositing by a magnetron sputtering instrument to obtain a platinum electrode with the thickness of 100nm, wherein the platinum electrode is uniformly and completely covered on the upper surface of the silicon substrate;
in the step S2, the vacuum environment in the step S1 is kept, the ferroelectric material is replaced to be used as a sputtering source, and a ferroelectric material dielectric layer with the thickness of 40nm is uniformly and completely sputtered on the upper surface of the platinum electrode;
in the step S3, MXene and deionized water are mixed according to the mass ratio of 10mg/ml, and stirred for 10min to prepare MXene suspension.
10. The method for preparing a ferroelectric memristor device based on a two-dimensional material according to claim 7, wherein: in the step S4, sucking the supernatant of the MXene suspension in the step S3, dripping the supernatant on the ferroelectric medium layer, spin-coating for 2min by a spin coater at the rotating speed of 1500r/min to uniformly cover an MKene material film on the upper surface of the ferroelectric medium layer so as to prepare a resistance change layer;
in the step S5, drying the resistance-change layer prepared by spin coating in the step S4, fixing the dried layer on a sputtering target gun, installing a mask plate on the top of the resistance-change layer, selecting copper as a sputtering source, and performing sputtering deposition to obtain a copper electrode with the thickness of 100nm, thereby preparing the memristor with the structure of copper/MXene/ferroelectric layer/platinum.
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| CN111900249A (en) * | 2020-07-15 | 2020-11-06 | 南京邮电大学 | Memristor and preparation method thereof |
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| CN111900249A (en) * | 2020-07-15 | 2020-11-06 | 南京邮电大学 | Memristor and preparation method thereof |
| CN111900249B (en) * | 2020-07-15 | 2022-10-14 | 南京邮电大学 | Memristor and preparation method thereof |
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