CN111900951A - High-vacuum surface-mounted micro tuning fork quartz crystal resonator - Google Patents
High-vacuum surface-mounted micro tuning fork quartz crystal resonator Download PDFInfo
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- CN111900951A CN111900951A CN202010764173.6A CN202010764173A CN111900951A CN 111900951 A CN111900951 A CN 111900951A CN 202010764173 A CN202010764173 A CN 202010764173A CN 111900951 A CN111900951 A CN 111900951A
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- 239000013078 crystal Substances 0.000 title claims abstract description 22
- 239000010453 quartz Substances 0.000 title claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 3
- 229920005989 resin Polymers 0.000 claims abstract description 3
- 229910000833 kovar Inorganic materials 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000003466 welding Methods 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000007872 degassing Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000009849 vacuum degassing Methods 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 241000565319 Butea monosperma Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 239000012466 permeate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
- H03H9/215—Crystal tuning forks consisting of quartz
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The utility model provides a high vacuum surface mounting's miniature tuning fork quartz crystal syntonizer, includes ceramic base, miniature tuning fork wafer and metal cover plate and constitutes, miniature tuning fork wafer is located ceramic base, and the electrode of miniature tuning fork wafer passes through the conducting resin and adheres to ceramic base internal electrode on, ceramic base internal electrode circuit connect ceramic base external electrode, its characterized in that: ceramic base is formed by supreme stack in proper order from down by ceramic bottom plate, ceramic backing plate, ceramic circle board and kovar alloy ring, the ceramic bottom plate bottom is provided with the metal pad, be provided with protruding pad in a left side and the protruding pad in the right side on the ceramic backing plate respectively. The invention has reliable quality, convenient manufacture, long service life and excellent electrical performance.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a high-vacuum surface-mounted micro tuning fork quartz crystal resonator.
Background
With the rapid growth of consumer electronic products (such as digital cameras, mobile phones, electronic books, etc.), to meet the market demand, miniaturized and low-cost products are an important part of the market, but the low-cost glass package is difficult to overcome the sealing technology under vacuum, and how to apply the glass to a tuning fork type quartz crystal resonator (i.e. the glass cannot be sealed under vacuum in a molten state) is a major factor to be overcome in the manufacturing technology.
The invention patent of Chinese patent application publication No. CN102324909A, application publication date of 2012, 1 month and 18, discloses a glass-encapsulated tuning fork type quartz crystal resonator and a manufacturing method thereof, wherein the quartz crystal resonator comprises a ceramic base and a metal upper cover, and the metal upper cover is provided with a hole; a quartz chip is arranged in the ceramic base; the electrode of the quartz chip is adhered to the electrode in the ceramic base through conductive adhesive; the outer edge of the ceramic base is coated with glass for packaging; the ceramic base and the metal upper cover are sealed by the packaging glass; and the quartz crystal resonator fills the hole on the metal upper cover by solder in a vacuum state. The manufacturing method comprises the steps of sealing a metal upper cover with holes and a ceramic base by using glass for packaging in a nitrogen environment, vacuumizing the sealed product by using vacuum equipment, and filling the holes in the metal upper cover by using solder in a vacuum environment.
The micro tuning fork quartz crystal resonator is manufactured by adopting a multi-layer ceramic tube shell internal sealed micro tuning fork wafer which is manufactured by a semiconductor photoetching process. After the tuning fork chip is miniaturized, the equivalent impedance ESR rises sharply, the two fork arms of the tuning fork quartz chip vibrate in a bending mode under the driving of a feedback loop, the bending vibration mode is very sensitive to gas molecules, and the gas molecules can form oscillation resistance to cause the equivalent impedance ESR to rise. In order to avoid the equivalent impedance ESR rise of the micro tuning fork quartz crystal resonator, the vacuum degree in the packaging cavity is required to be kept, and the release of gas molecules in the packaging process is eliminated. Although the resonator in the invention is manufactured through vacuumizing operation, no treatment measures are taken for gas impurities generated in the welding process, and the quality of the produced resonator is still defective.
Disclosure of Invention
The invention aims to overcome the defects and shortcomings of the prior art and provide the high-vacuum surface-mounted micro tuning fork quartz crystal resonator which is reliable in quality, convenient to manufacture, long in service life and excellent in electrical performance.
In order to achieve the above purpose, the technical solution of the invention is as follows: the utility model provides a high vacuum surface mounting's miniature tuning fork quartz crystal syntonizer, includes ceramic base, miniature tuning fork wafer and metal cover plate and constitutes, miniature tuning fork wafer is located ceramic base, and the electrode of miniature tuning fork wafer passes through the conducting resin and adheres to ceramic base internal electrode on, ceramic base internal electrode circuit connect ceramic base external electrode, its characterized in that: ceramic base is formed by supreme stack in proper order from down by ceramic bottom plate, ceramic backing plate, ceramic circle board and kovar alloy ring, the ceramic bottom plate bottom is provided with the metal pad, be provided with protruding pad in a left side and the protruding pad in the right side on the ceramic backing plate respectively.
The miniature tuning fork wafer includes tuning fork structure base, the both ends difference fixedly connected with left branch brace and the right branch brace of tuning fork structure base, the middle part fixedly connected with left tuning fork arm and the right tuning fork arm of tuning fork structure base, the other end fixedly connected with tuning fork of left side tuning fork arm adds the weight arm on a left side, the other end fixedly connected with tuning fork of right side tuning fork arm adds the weight arm on the right side.
The left tuning fork arm is provided with a left groove, the right tuning fork arm is provided with a right groove, the left groove and the right groove are vertically symmetrical, and the cross sections of the left groove and the right groove are V-shaped.
A circular through hole is formed in the left supporting arm, and a rectangular through hole is formed in the right supporting arm.
The micro tuning fork quartz crystal resonator has the advantages of good sealing performance, high vacuum degree in the ceramic base, greatly reduced influence degree of the tuning fork wafer on the inside from the outside, slow aging speed of the whole device, longer service life, low air density in the ceramic base, low equivalent impedance ESR (equivalent resistance) and capability of reaching the ESR below 90K ohm after sealing.
Drawings
Fig. 1 is a schematic view of a micro tuning fork wafer.
FIG. 2 is a schematic view of a ceramic base enclosing an unsealed metal upper cover of a micro tuning fork wafer.
FIG. 3 is a top view of the ceramic base enclosing the unsealed metal upper cover of the micro tuning fork wafer.
Fig. 4 is a schematic view of a product having a sealed metal upper cover.
Fig. 5 is a schematic view of a high vacuum oven configuration.
FIG. 6 is a graph of a distribution of resistance parallel seam weld and laser seal areas.
FIG. 7 is a schematic diagram of resistance parallel seam welding.
Fig. 8 is a schematic view of a laser seal.
FIG. 9 is a flow chart of the degassing of the high vacuum bake out.
In the figure: ceramic base 1, tuning fork left weighting arm a001, tuning fork right weighting arm a002, left tuning fork arm a003, right tuning fork arm a004, right trench a005, circular through hole a006, rectangular through hole a007, right support arm a008, left trench a009, left support arm a010, tuning fork structure base a011, micro tuning fork wafer b002, alloy ring b003, ceramic ring plate b004, ceramic backing plate b005, ceramic bottom plate b006, left bump pad c001, right bump pad c007, metal cover plate d001, frame area e001, e003, left micro-orifice e002, right micro-orifice e005, roller f001, f002, vacuum water tube g001, g004, heat-generating tube g002 embedded in the tray, tray g003 in the box, temperature sensor g005, g006, nitrogen valve inlet g007, nitrogen gas inlet g008, pre-valve g009, molecular pump g010, low-valve g011, pump g012, vacuum oven g014, vacuum oven g015, laser dhak.
Detailed Description
The present invention will be described in further detail with reference to the following description and embodiments in conjunction with the accompanying drawings.
Micro tuning fork wafer structure referring to fig. 1, a micro tuning fork quartz crystal resonator with high vacuum surface mounting comprises a ceramic base 1, a micro tuning fork wafer b002 and a metal cover plate d001, the micro tuning fork wafer b002 is positioned in the ceramic base 1, the electrode of the micro tuning fork wafer b002 is adhered to the electrode inside the ceramic base 1 through conductive adhesive, the internal electrode circuit of the ceramic base 1 is connected with the external electrode of the ceramic base 1, the ceramic base 1 is formed by sequentially stacking a ceramic bottom plate b006, a ceramic backing plate b005, a ceramic ring plate b004 and a Kovar alloy ring b003 from bottom to top, the ceramic ring plate b004 provides a height space for a tuning fork wafer, the ceramic ring plate b004 and the Kovar alloy ring b003 form a micro tuning fork wafer b002 together and are placed in the height space, the bottom of the ceramic base plate b006 is provided with a metal pad, and the ceramic base plate b005 is provided with a left protruding pad c001 and a right protruding pad c007 respectively.
The micro tuning fork wafer b002 comprises a tuning fork structure substrate a011, wherein a left supporting arm a010 and a right supporting arm a008 are fixedly connected to two ends of the tuning fork structure substrate a011 respectively, the surfaces 8 of the left supporting arm a010 and the right supporting arm a00 are plated with metal layers and are respectively electrically connected with tuning fork electrodes, the left supporting arm a010 is provided with a circular through hole a006, a rectangular through hole a007 is formed in the right supporting arm a008, a left tuning fork arm a003 and a right tuning fork arm a004 are fixedly connected to the middle of the tuning fork structure base a011, left groove a009 is formed on the left tuning fork arm a003, right groove a005 is formed on the right tuning fork arm a004, the left groove a009 and the right groove a005 are vertically symmetrical, the cross sections of the left groove a009 and the right groove a005 are V-shaped, the other end of left tuning fork arm a003 is fixedly connected with tuning fork left weighting arm a001, and the other end of right tuning fork arm a004 is fixedly connected with tuning fork right weighting arm a 002.
The manufacturing method of the micro tuning fork quartz crystal resonator comprises the following steps:
1) the crystal bar is artificially grown, the crystal bar is oriented to X +5 degrees through an X-ray orientation instrument and is fixed in a fixture, the crystal bar of the positioning fixture is made into a wafer through a cutting and grinding process, the wafer forms a tuning fork structure through a photoetching wet etching process, tuning forks form electrodes through a coating etching process to obtain a micro tuning fork wafer b002, the thickness of the micro tuning fork wafer b002 is 80-100 micrometers, then the manufactured micro tuning fork wafer b002 is placed in the ceramic base 1, the left supporting arm a010 and the right supporting arm a008 are respectively placed on the left protruding pad c001 and the right protruding pad c007, and the positions of the circular through hole a006 and the rectangular through hole a007 are respectively coincided with the central positions of the left protruding pad c001 and the right protruding pad c 007. The left supporting arm a010 and the right supporting arm a008 are coated with silver colloid during welding, the silver colloid has fluidity before curing, the silver colloid can permeate into the circular through hole a006 and the rectangular through hole a007, after the curing process, the welding strength of the b002 piece of the micro tuning fork wafer is enhanced, and the mounting process is shown in fig. 2-4;
2) and releasing organic matters and water molecules in the ceramic base 1 through a high vacuum baking degassing process port. The structure of the high vacuum degassing oven device is shown in figure 5, g014 is a vacuum oven body, a tray g003 is arranged in the high vacuum degassing oven device, and the micro tuning fork resonator placed in the jig plate is placed on the tray for high vacuum baking and degassing. The concrete structure is that g003 is tray in the box, and g002 heats the tray for embedded heating tube in the tray, and g005 is temperature sensor, and heating tube and temperature sensor control the temperature under outside intelligent control ware. g001 and g004 are water-cooling pipelines embedded in the box body, and the cavity is cooled by cold water circulation under the control of an external controller. The vacuum in the cavity is controlled by an external vacuum system, specifically a g008 nitrogen inlet, a g007 nitrogen inlet valve, a vacuum high valve g015, a molecular pump g010, a low valve g011, a backing pump g013 and a pre-valve g 009. The high vacuum baking degassing process is shown in figure 9;
3) the metal cover plate d001 and the kovar alloy ring b003 are hermetically welded together by a metal double-wheel resistance parallel seam welding process, the resistance parallel seam welding utilizes the large contact resistance between contact surfaces of two materials to be welded, and the heat generated according to the ohm law is Q = I2Rt (I is the through-contact surface current, R is the contact resistance, t is the discharge time), and the amount of heat generated increases with increasing current. Fig. 7 shows, gyro wheel f002, f001 lets in the heavy current, the electric current is big through gyro wheel and metal covering d001 contact department resistance, can produce the heat in the contact position, the electric current is more than 200A in the seam welding technology, tens milliseconds of time of effect, pulse direct current produces a large amount of heats through the contact surface in the short time, because the coefficient of heat conductivity of metal is big, the specific heat is little, the short time produces high temperature, make metal covering d001 gyro wheel and contact surface's heat conduct between kovar ring b003 and the metal covering d001, the mutual butt fusion of contact department metal, form the compact layer weld zone. The high-temperature welding process using metal double-wheel short-time pulse large-current discharge to generate heat at the contact surface is called resistance-type parallel seam welding process, and the metal double-wheel short-time pulse large-current discharge rolls forwards along with the two rollersAnd (4) performing impulse discharge, and welding the metal to form a sealing layer. As shown in fig. 6, the frame regions e001 and e003 are resistance parallel seam welded regions, and by resistance parallel seam welding, the kovar alloy ring b003 and the metal lid plate d001 are seal-welded. The whole process is completed in a sealed high-purity nitrogen environment, and the dew point temperature of the nitrogen is below minus 45 ℃. After the area welding is finished, because there is gas release in the metal covering high temperature welding process, if metal cover plate d001 all around can remain gas to the ceramic cavity with the completion of the parallel seam welding of resistance formula, micro tuning fork wafer b002 vibration can receive gaseous resistance, leads to equivalent impedance ESR grow. The invention improves the traditional parallel seam welding mode, a small area is reserved to form a left micro-port e002 and a right micro-port e005, and gas generated by parallel seam welding is released from the left micro-port e002 and the right micro-port e005 in a high-vacuum and high-heat environment by utilizing a high-vacuum baking process, so that the aim of improving equivalent impedance ESR is fulfilled;
4) repeating the high vacuum baking degassing process port in the step 2) to release organic matters and water molecules in the ceramic base 1;
5) putting the micro tuning fork resonator obtained in the step 4) and a jig plate into a vacuum cavity of high-energy laser spot welding equipment, wherein the structure of a laser h001 is shown in figure 8, and performing laser high-energy pulse spot welding on a left micro-opening e002 and a right micro-opening e005 to complete the seal welding of the whole device. The vacuum degree in the cavity is kept at 10 under the working state of a vacuum system-4And below Pa, selecting a 50W infrared laser with high beam quality and light spot smaller than 30 microns, wherein the pulse action time of two micropores of a single device is less than 1ms, the action area is small, the time is short, the heat generated by the laser instantly completes sealing welding, the generated welding gas is little, and the equivalent resistance ESR of the sealed micro tuning fork resonator reaches the index range below 90K ohm.
Claims (4)
1. The utility model provides a high vacuum surface mounting's miniature tuning fork quartz crystal syntonizer, includes ceramic base (1), miniature tuning fork wafer (b 002) and metal covering plate (d 001) and constitutes, miniature tuning fork wafer (b 002) is located ceramic base (1), and the electrode of miniature tuning fork wafer (b 002) is through conducting resin adhere to ceramic base (1) internal electrode on, ceramic base (1) internal electrode circuit connect ceramic base (1) external electrode, its characterized in that: ceramic base (1) is formed by supreme stack in proper order down by ceramic bottom plate (b 006), ceramic backing plate (b 005), ceramic circle board (b 004) and alloy ring (b 003), ceramic bottom plate (b 006) bottom is provided with the metal pad, be provided with protruding pad (c 001) in a left side and protruding pad (c 007) in the right side on ceramic backing plate (b 005) respectively.
2. The high vacuum surface mounted micro tuning fork quartz crystal resonator according to claim 1, characterized in that: miniature tuning fork wafer (b 002) includes tuning fork structure base (a 011), the both ends of tuning fork structure base (a 011) are fixedly connected with left branch brace (a 010) and right branch brace (a 008) respectively, the middle part fixedly connected with left tuning fork arm (a 003) and right tuning fork arm (a 004) of tuning fork structure base (a 011), the other end fixedly connected with tuning fork left side of left side tuning fork arm (a 003) adds weight arm (a 001), the other end fixedly connected with tuning fork right side of right side tuning fork arm (a 004) adds weight arm (a 002).
3. The high vacuum surface mounted micro tuning fork quartz crystal resonator according to claim 2, characterized in that: the tuning fork is characterized in that a left groove (a 009) is formed in the left tuning fork arm (a 003), a right groove (a 005) is formed in the right tuning fork arm (a 004), the left groove (a 009) and the right groove (a 005) are vertically symmetrical, and the cross sections of the left groove (a 009) and the right groove (a 005) are V-shaped.
4. The high vacuum surface mounted micro tuning fork quartz crystal resonator according to claim 2, characterized in that: a round through hole (a 006) is formed in the left supporting arm (a 010), and a rectangular through hole (a 007) is formed in the right supporting arm (a 008).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111917395A (en) * | 2020-08-02 | 2020-11-10 | 泰晶科技股份有限公司 | High-vacuum surface-mounted micro tuning fork quartz crystal resonator and manufacturing method thereof |
| CN117353690A (en) * | 2023-10-25 | 2024-01-05 | 惠伦晶体(重庆)科技有限公司 | Manufacturing method of low-ESR (equivalent series resistance) low-cost miniaturized tuning fork resonator |
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| CN212969585U (en) * | 2020-08-02 | 2021-04-13 | 泰晶科技股份有限公司 | High-vacuum surface-mounted micro tuning fork quartz crystal resonator |
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2020
- 2020-08-02 CN CN202010764173.6A patent/CN111900951A/en active Pending
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| CN111917395A (en) * | 2020-08-02 | 2020-11-10 | 泰晶科技股份有限公司 | High-vacuum surface-mounted micro tuning fork quartz crystal resonator and manufacturing method thereof |
| CN117353690A (en) * | 2023-10-25 | 2024-01-05 | 惠伦晶体(重庆)科技有限公司 | Manufacturing method of low-ESR (equivalent series resistance) low-cost miniaturized tuning fork resonator |
| CN117353690B (en) * | 2023-10-25 | 2024-05-14 | 惠伦晶体(重庆)科技有限公司 | Manufacturing method of low-ESR (equivalent series resistance) low-cost miniaturized tuning fork resonator |
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