CN111883543B - 阵列基板的制作方法、阵列基板和显示装置 - Google Patents

阵列基板的制作方法、阵列基板和显示装置 Download PDF

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CN111883543B
CN111883543B CN202010740589.4A CN202010740589A CN111883543B CN 111883543 B CN111883543 B CN 111883543B CN 202010740589 A CN202010740589 A CN 202010740589A CN 111883543 B CN111883543 B CN 111883543B
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layer
protective layer
substrate
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CN111883543A (zh
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夏玉明
卓恩宗
叶利丹
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HKC Co Ltd
Beihai HKC Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种阵列基板的制作方法，所述阵列基板的制作方法包括以下步骤：提供一基板；在所述基板上沉淀和图案化形成栅极层；在所述覆盖栅极层的基板上采用原子沉积法沉积保护层；在所述保护层上沉淀和图案化形成非晶硅层和欧姆接触层。本发明还公开了一种阵列基板和显示装置。本发明均匀的保护层降低了对薄膜晶体管场效应迁移率的影响，使得产品的显示更加稳定，提高了显示效果。

Description

阵列基板的制作方法、阵列基板和显示装置
技术领域
本发明涉及显示技术领域，尤其涉及阵列基板的制作方法、阵列基板和显示装置。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
随着科技水平的不断发展，越来越多的电子产品进入人们的日常生活和工作当中，而这些电子产品基本都具有显示屏。
薄膜晶体管液晶显示(TFT-LCD)是显示屏制作的一种技术，其中tft为每个像素都设有一个半导体开关，以此做到完全的单独的控制一个像素点，液晶材料被夹在tft玻璃层和颜色过滤层之间，通过改变刺激液晶的电压值就可以控制最后出现的光线强度与色彩。
晶体管(TFT)开发的关键是阵列基板的制备即通过在玻璃基板上沉积各层导电和功能薄膜图形，实现对液晶的电学驱动，其中SiNx薄膜与非晶硅(α-Si：H)薄膜之间的界面特性对TFT的场效应迁移率有着至关重要的影响，同时，SiNx薄膜表面的平整度对场效应迁移率的影响也很明显，因为它将影响到形成TFT导电沟道的非晶硅薄膜的初始生长环境和缺陷态密度。传统SiNx薄膜是采用等离子体化学气象沉积(PECVD)制备的，这种沉积方法由于工艺温度低、沉积速度快等优点而在工业生产中大量使用，但是，由于过快的沉积速度和不易控制的化学反应，使得SiNx薄膜的表面平整度和均匀度都较差，导致TFT的场效应迁移率变差，严重影响产品的使用，实际当中，可以用等离子体处理的方法来改善该缺陷，但是等离子处理过程中很容易诱发SiNx薄膜的离子损伤，导致TFT性能退化。
综上，目前的SiNx薄膜的制作方法导致TFT的场效应迁移率变差，严重影响产品的使用，导致显示屏的显示效果差。
发明内容
本发明的主要目的在于提供一种阵列基板的制作方法、阵列基板和显示装置，旨在解决SiNx薄膜的制作方法导致TFT的场效应迁移率变差，严重影响产品的使用，导致显示屏的显示效果差的问题。
为实现上述目的，本发明一方面提供一种阵列基板的制作方法，所述阵列基板的制作包括以下步骤：
提供一基板；
在所述基板上沉淀和图案化形成栅极层；
在所述覆盖栅极层的基板上采用原子沉积法沉积保护层；
在所述保护层上沉淀和图案化形成非晶硅层和欧姆接触层。
通过在制作阵列基板过程中形成栅极层后，通过原子沉积法沉积保护层，原子沉积法可以在栅极层的表面形成均匀的保护层，均匀的保护层降低了对TFT场效应迁移率的影响，使得产品的显示更加稳定，提高了显示效果。
可选地，所述在所述覆盖栅极层的基板上采用原子沉积法沉积保护层的步骤包括：
将覆盖栅极层的基板放入原子沉积反应腔内，调整所述反应腔的温度加热至预设温度以及压强抽真空至预设压强；
控制硅前躯体源送入反应腔第一预设时间；
控制使用惰性气体吹扫反应腔第二预设时间；
控制氮前躯体源送入反应腔第三预设时间；
控制使用惰性气体吹扫反应腔第四预设时间；
循环使用硅前躯体源和氮前躯体源以及惰性气体吹扫反应腔的操作，以在覆盖栅极层的基板上形成保护层。
通过原子沉积法沉积保护层，使得保护层更加均匀，不会影响到TFT场效应迁移率，提高了显示的稳定性。
可选地，采用同一沉积速度完成保护层的沉积。同一沉积速度，使得在栅极层上的保护层更加均匀。
可选地，所述沉积速度的范围为1-20埃/每秒。
可选地，所述保护层的厚度为2000-4000埃米。
可选地，所述硅前躯体源为氯化硅、正硅酸乙酯、氨基硅烷、六氯乙硅烷中的一种；所述氮前躯体源为氮气、氨气、联氨中的至少一种。
可选地，所述预设温度的范围为150摄氏度-300摄氏度，所述预设压强为10pa-100pa。
此外，为实现上述目的，本发明另一方面还提供一种阵列基板，所述阵列基板包括：基板，形成在所述基板上的栅极层、保护层、非晶硅层和欧姆接触层，所述保护层通过原子层沉积工艺沉积而成。
可选地，所述原子沉积工艺采用同一沉积速度完成保护层的沉积。
此外，为实现上述目的，本发明再一方面还提供一种显示装置，所述显示装置包括阵列基板，所述阵列基板包括：基板，形成在所述基板上的栅极层和保护层，所述保护层通过原子层沉积工艺沉积而成。
本发明通过在制作阵列基板过程中形成栅极层后，通过原子沉积法沉积保护层，原子沉积法可以在栅极层的表面形成均匀的保护层，均匀的保护层降低了对TFT场效应迁移率的影响，使得产品的显示更加稳定，提高了显示效果。
附图说明
图1为本发明阵列基板的制作方法的一实施例的流程示意图；
图2为图1中原子沉积法沉积保护层的一实施例的流程示意图；
图3为本发明一实施例阵列基板的架构示意图。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
本发明实施例的主要解决方案是：提供一基板；在所述基板上沉淀和图案化形成栅极层；在所述覆盖栅极层的基板上采用原子沉积法沉积保护层；在所述保护层上沉淀和图案化形成非晶硅层和欧姆接触层。
目前显示装置，由于SiNx薄膜的制作方法导致TFT的场效应迁移率变差，严重影响产品的使用，显示屏的显示效果差的问题。本发明提供一种解决方案，通过在制作阵列基板过程中形成栅极层后，通过原子沉积法沉积保护层，原子沉积法可以在栅极层的表面形成均匀的保护层，均匀的保护层降低了对TFT场效应迁移率的影响，使得产品的显示更加稳定，提高了显示效果。
参照图1，本发明的一实施例提供一种阵列基板的制作方法，所述阵列基板的制作方法包括：
步骤S10，提供一基板；
在本实施例中，TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管液晶显示器)之所以能显示不同的颜色与画面，是因为面板内有很多个R红色像素、G绿色像素、B蓝色像素组成的像素矩阵，这3个像素可以在不同亮度下显示出不同的颜色。而控制这些像素显示不同颜色的为阵列基板的薄膜晶体管，薄膜晶体管根据信号开启或者关闭不同的开关以控制显示不同的颜色。
提供一基板，所述基板为玻璃基板，提供的基板为清洗过后的基板。
步骤S20，在所述基板上沉淀和图案化形成栅极层；
所述栅极层为电极层，所述栅极层的材料可以是铜、铝、钼或者多种混合而成。在所述基本上新涂布栅极层的材料层，然后涂布光阻，使用掩膜板形成栅极层的图案，在需要留下栅极层的位置留下光阻层，不需要留下栅极层的位置不留下光阻层，通过蚀刻的方式洗掉栅极层上的光阻层，产生了图案化的栅极层，所述栅极层可以是铜、铝、钼及其复合而成。
步骤S30，在所述覆盖栅极层的基板上采用原子沉积法沉积保护层；
在所述基板上形成栅极层后，在所述覆盖栅极层的基板上沉积保护层，所述保护层不需要掩膜板工艺，即，此道制程不需要光刻工艺，此保护层为绝缘层，所需的材料可以是氮化硅、氧化硅、氮氧化硅或其它有机绝缘材料，其膜厚范围为：2000-4000埃米，当然也可是其他根据显示需求的膜厚，比方1000-5000埃米，所述保护层的沉积方式为原子沉积法沉积，通过原子沉积法沉积，利用原子层沉积技术的良好台阶覆盖性，可以在阵列基板的栅金属层表面均匀的沉积一层致密无空洞缺陷，高同质性的保护层，即，SiNx薄膜。
步骤S40，在所述保护层上沉淀和图案化形成非晶硅层和欧姆接触层。
在所述覆盖了保护层的基板上沉淀非晶硅层和欧姆接触层，经过掩膜板工艺在所述基板上形成图案，即通过掩膜板的作用在需要非晶硅层和欧姆接触层的地方预留下非晶硅层和欧姆接触层，完成非晶硅层和欧姆接触层图形的涂布，所述非晶硅层和欧姆接触层可以采用化学气象沉积、等离子体增强化学气象沉积或原子层沉积技术制备；所述的非晶硅层是指α-Si：H，欧姆接触层是指n+α-Si：H。在形成非晶硅层和欧姆接触层后，形成源极和漏极，然后涂布钝化层，形成过孔，涂布导电层。
本实施例通过在制作阵列基板过程中形成栅极层后，通过原子沉积法沉积保护层，原子沉积法可以在栅极层的表面形成均匀的保护层，均匀的保护层降低了对TFT场效应迁移率的影响，使得产品的显示更加稳定，提高了显示效果。
参考图2，在一实施例中，所述在所述覆盖栅极层的基板上采用原子沉积法沉积保护层的步骤包括：
步骤S31，将覆盖栅极层的基板放入原子沉积反应腔内，调整所述反应腔的温度加热至预设温度以及压强抽真空至预设压强；
步骤S32，控制硅前躯体源送入反应腔第一预设时间；
步骤S33，控制使用惰性气体吹扫反应腔第二预设时间；
步骤S34，控制氮前躯体源送入反应腔第三预设时间；
步骤S35，控制使用惰性气体吹扫反应腔第四预设时间；
步骤S36，循环使用硅前躯体源和氮前躯体源以及惰性气体吹扫反应腔的操作，以在覆盖栅极层的基板上形成保护层。
在利用原子沉积法沉积保护层时，首先将制备好第一图形(栅极层)的阵列基板放入ALD(原子沉积)反应腔内，并加热至180℃，抽真空至50Pa，待温度与真空度稳定后，打开硅前驱体源控制电磁阀0.02s，本实施例采用SiCl4作为硅前驱体源，然后让SiCl4在腔室内停留0.03s(第一预设时间，也还可以设置成其他时间，例如，0.05s，还可以是在一个时间范围内选择，例如，0.03s-0.08s)与基板和栅极充分接触反应，最后用惰性气体Ar吹扫5s(第二预设时间，也可以设置成其他时间，例如，6s，还可以是在一个时间范围内选择，例如，5s-10s)，将剩余的SiCl4吹扫出反应腔；与上述步骤相似，打开氮前驱体电子阀0.03s,本实施例采用NH3作为氮前驱体源，然后让NH3在腔室内停留20s(第三预设时间，也还可以设置成其他时间，例如，22s，还可以是在一个时间范围内选择，例如，18s-30s)与在吸附在基板和栅极的SiCl4充分反应，最后用惰性气体Ar吹扫20s(第四预设时间，也还可以设置成其他时间，例如，19s，还可以是在一个时间范围内选择，例如，15s-28s)，将剩余的SiCl4和反应副产物吹扫出反应腔；重复上述两个动作500次(可以设置成其他次数，例如，400次，也可以是在一个范围内选取，例如，范围为200次-800次)，在栅极和基板表面生长厚度为3000埃米左右均匀致密的氮化硅薄膜，所述保护层的厚度为2000-4000埃米，不局限于300埃米。所述硅前躯体源为氯化硅、正硅酸乙酯、氨基硅烷、六氯乙硅烷中的一种；所述氮前躯体源为氮气、氨气、联氨中的至少一种。所述预设温度的范围为150摄氏度-300摄氏度，所述预设压强为10pa-100pa。
通过利用原子沉积法在栅极层上沉积均匀的保护层，使得TFT场效应迁移率不受影响，提高显示效果。
在本发明一实施例中，所述原子沉积的过程中，采用同一沉积速度完成保护层的沉积，所述沉积速度的范围为1-20埃/每秒。沉积的SiNx薄膜(保护层)是采用同一沉积速度下进行的，薄膜平整度和均匀度都很高，表面缺陷少，界面态密度低；继续沉积非晶硅层和欧姆接触层组装成阵列结构，SiNx薄膜与非晶硅薄膜之间的低界面态密度，大幅提高电子的场效应迁移率，提高TFT的开态电流，获得更大的像素开口率，减小面板的响应时间；形成致密、无空洞缺陷，高同质性和厚度均匀性的SiNx薄膜具有较高的介电常数和低漏电薄膜，使得栅极与导电沟道之间电容更大，更好的提高显示效果。
此外，本发明实施例还提出一种阵列基板，所述阵列基板的架构示意图参考图3。所述阵列基板由上述实施例所述的阵列基板的制作方法制作而成，所述阵列基板包括：基板10，形成在所述基板上的栅极层20、保护层30、非晶硅层40和欧姆接触层50，所述保护层30通过原子层沉积工艺沉积而成。
所述栅极层20、非晶硅层40和欧姆接触层50均需要采用掩膜板工艺，以在所述基板10上形成所需的图案；而所述保护层30为全覆盖涂布，无需光刻工艺，即，无需掩膜板工艺。在沉淀图案化栅极层20后，采用原子沉积法沉积保护层30，在沉积过程中采用相同的沉积速度完成保护层30的沉积，使得在栅极层20表面形成的保护层30更加均匀，继续沉积非晶硅层和欧姆接触层组装成阵列结构，SiNx薄膜与非晶硅薄膜之间的低界面态密度，大幅提高电子的场效应迁移率，使得显示效果更好。
所述阵列基板在形成非晶硅层40和欧姆接触层50后，在所述非晶硅层40和欧姆接触层50上涂布源极/漏极60和钝化层，形成过孔后涂布导电层，以完成TFT的制作。
此外，本发明实施例还提出一种显示装置，所述显示装置包括如上述所述所述的阵列基板。
所述显示装置，还包括：与所述阵列基板对向设置的对向基板，以及填充于所述阵列基板和所述对向基板之间的显示介质。所述显示介质可以是液晶层，或其他具有显示效果的材料介质，例如，发光二极管显示介质或动态全系显示介质。
基板10，形成在所述基板上的栅极层20、保护层30、非晶硅层40和欧姆接触层50，所述保护层30通过原子层沉积工艺沉积而成。
所述栅极层20、非晶硅层40和欧姆层50均需要采用掩膜板工艺，以在所述基板10上形成所需的图案；而所述保护层30为全覆盖涂布，无需光刻工艺，即，无需掩膜板工艺。在沉淀图案化栅极层20后，采用原子沉积法沉积保护层30，在沉积过程中采用相同的沉积速度完成保护层30的沉积，使得在栅极层20表面形成的保护层30更加均匀，继续沉积非晶硅层和欧姆接触层组装成阵列结构，SiNx薄膜与非晶硅薄膜之间的低界面态密度，大幅提高电子的场效应迁移率，使得显示效果更好。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者系统不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者系统所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者系统中还存在另外的相同要素。
上述本发明实施例序号仅仅为了描述，不代表实施例的优劣。
通过以上的实施方式的描述，本领域的技术人员可以清楚地了解到上述实施例方法可借助软件加必需的通用硬件平台的方式来实现，当然也可以通过硬件，但很多情况下前者是可选地实施方式。基于这样的理解，本发明的技术方案本质上或者说做出贡献的部分可以以软件产品的形式体现出来，该计算机软件产品存储在如上所述的一个计算机可读存储介质(如ROM/RAM、磁碟、光盘)中，包括若干指令用以使得一台终端设备(可以是手机，计算机，服务器，空调器，或者网络设备等)执行本发明各个实施例所述的方法。
以上仅为本发明的可选实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (6)

1.一种阵列基板的制作方法，其特征在于，所述阵列基板的制作方法包括以下步骤：
提供一基板；
在所述基板上沉淀和图案化形成栅极层；
在所述覆盖栅极层的基板上采用原子沉积法沉积保护层；
在所述保护层上沉淀和图案化形成非晶硅层和欧姆接触层；
所述在所述覆盖栅极层的基板上采用原子沉积法沉积保护层的步骤包括：
将覆盖栅极层的基板放入原子沉积反应腔内，调整所述反应腔的温度加热至预设温度以及压强抽真空至预设压强；
控制硅前躯体源送入反应腔第一预设时间；
控制使用惰性气体吹扫反应腔第二预设时间；
控制氮前躯体源送入反应腔第三预设时间；
控制使用惰性气体吹扫反应腔第四预设时间；
循环使用硅前躯体源和氮前躯体源以及惰性气体吹扫反应腔的操作，以在覆盖栅极层的基板上形成保护层；
其中所述预设温度为180摄氏度，所述预设压强为50pa；
原子沉积法采用同一沉积速度完成保护层的沉积，用以提高保护层表面平整度和均匀度。
2.如权利要求1所述的阵列基板的制作方法，其特征在于，所述沉积速度的范围为1-20埃/每秒。
3.如权利要求1所述的阵列基板的制作方法，其特征在于，所述保护层的厚度为2000-4000埃米。
4.如权利要求1所述的阵列基板的制作方法，其特征在于，所述硅前躯体源为氯化硅、正硅酸乙酯、氨基硅烷、六氯乙硅烷中的一种；所述氮前躯体源为氮气、氨气、联氨中的至少一种。
5.一种阵列基板，其特征在于，所述阵列基板包括：基板，形成在所述基板上的栅极层、保护层、非晶硅层和欧姆接触层，所述保护层通过原子层沉积工艺沉积而成；
所述保护层在150摄氏度的预设温度以及50pa的预设压强条件下的沉积腔内沉积；
所述原子沉积工艺采用同一沉积速度完成保护层的沉积。
6.一种显示装置，其特征在于，所述显示装置包括如权利要求5所述的阵列基板。
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