CN111863958B - Normally-on high electron mobility transistor structure and manufacturing method thereof - Google Patents
Normally-on high electron mobility transistor structure and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 14
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- 239000010410 layer Substances 0.000 claims description 166
- 229910002601 GaN Inorganic materials 0.000 claims description 84
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- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000004831 Hot glue Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
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- 238000000016 photochemical curing Methods 0.000 claims description 2
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- 229910000676 Si alloy Inorganic materials 0.000 claims 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a normally-on type vertical structure AlGaN/GaN high electron mobility transistor structure and a manufacturing method thereof. The transistor sequentially comprises the following components from bottom to top: the device comprises a drain electrode, a substrate, a bonding metal layer, a drain ohmic contact metal layer, a high-resistance layer, a GaN channel layer, an AlGaN barrier layer, a passivation layer, a source electrode and a gate electrode, and is characterized in that: and a through hole is arranged in the high-resistance layer right below the gate electrode, so that the drain ohmic contact metal layer is communicated with the GaN channel layer, a vertical conductive channel which is conductive by the drain ohmic contact metal layer is formed, and lower on-resistance can be obtained. The manufacturing method of the high electron mobility transistor structure is also disclosed, secondary epitaxy and ion implantation are not needed in the manufacturing process, and the interface pollution caused by secondary epitaxy in the traditional manufacturing method and the adverse effects of lattice damage, complex process, high cost and the like caused by ion implantation are radically eliminated.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a normally-on type vertical structure AlGaN/GaN high electron mobility transistor structure and a manufacturing method thereof.
Background
Compared with the first and second generation semiconductor materials, the third generation semiconductor material GaN material has the advantages of large forbidden bandwidth, high breakdown field intensity, high electron mobility, strong radiation resistance and the like, and has great development potential in the high-frequency and high-power fields of GaN-based high electron mobility transistor wireless communication base stations, radars, automobile electrons and the like. The advent of AlGaN/GaN high electron mobility transistor (AlGaN/GaN HEMT) structures was based on the phenomenon described by T.Mimura et al, 1975, M.A. khan et al, 1994: an exceptionally high electron mobility is exhibited at the interface region of AlGaN and GaN heterostructures. At present, a conventional AlGaN/GaN HEMT device is of a planar structure, and a source electrode, a drain electrode and a grid electrode of the device are all arranged on the top surface of the device, so that reliability is easy to be reduced, for example, current collapse benefits can occur under the condition of large grid bias or high frequency, and self-heating effect and the like can be generated when the AlGaN/GaN HEMT device works in a high-temperature and high-power environment. Meanwhile, the planar structure AlGaN/GaN HEMT is not beneficial to integration with other components. The vertical structure AlGaN/GaN HEMT can well solve the problems of the horizontal structure AlGaN/GaN HEMT in principle, and becomes the development trend of AlGaN/GaN HEMT devices.
In the manufacturing process of the vertical structure AlGaN/GaN HEMT device, the formation of a vertical current conducting channel is always a difficult point. The existing vertical current conducting channels are formed by the following schemes:
(1) P-GaN is used as a current blocking layer, then a photoetching technology is used for forming small holes in the P-GaN, and then secondary epitaxy is carried out to fill the small holes with N-GaN to be used as vertical conductive channels. This method requires a secondary epitaxy, which is very prone to cause contamination of the interface, thus affecting the device performance, and is costly. Specific methods are described in AlGaN/GaN current aperture vertical electron transistors with regrown channels, journal of Applied Physics,2004, 95 (4): 2073-2078.
(2) High resistance is formed on the selected area of the intrinsic GaN by ion implantation, and the selected area is used as a current blocking layer, and the ion implantation is not performed in the area needing to be conducted to form a vertical conductive channel. Mg Ion implantation can be used to form P-GaN current blocking layers, see Enhancement and depletion mode AlGaN/GaN CAVET with Mg-Ion-Implanted GaN as current blocking layer, IEEE Electron Device Letters,2008,29 (6): 543-545; or by using lattice defects caused by Al ion implantation as a current blocking layer, see Current status and scope of galliumnitride-based vertical transistors for high-power electronics application, semiconductor Science and technology,2013,28:074014. However, ion implantation can cause significant lattice damage, which can easily cause severe leakage and even current collapse. Meanwhile, the ion implantation process is complex, the cost is high, and the control of the production cost is not facilitated.
(3) First, performing primary epitaxy to form a high-resistance GaN layer as a current blocking layer, forming a low-resistance region on the high-resistance GaN layer by Si ion implantation to form a vertical conductive channel, and then performing secondary epitaxy to grow a subsequent channel layer, a barrier layer and the like, see CN201510103132.1 and CN201510109496.0. Compared with the method which utilizes the implantation of Mg and Al ions, the method has the advantages that the damage to the epitaxial layer is obviously reduced, however, secondary epitaxy is still required, interface pollution is easy to cause, the performance of the device is influenced, and the cost is high.
Disclosure of Invention
The invention aims to provide a novel vertical structure AlGaN/GaN HEMT device structure and a manufacturing method thereof, which do not need secondary epitaxy and ion implantation, and fundamentally avoid adverse effects caused by the secondary epitaxy and ion implantation.
The purpose of the invention is realized in the following way:
a normally-on vertical structure AlGaN/GaN high electron mobility transistor structure comprises, in order from bottom to top: drain electrode, base plate, bonding metal layer, drain ohmic contact metal layer, high resistance layer, gaN channel layer, alGaN barrier layer, passivation layer, source electrode and gate electrode, characterized by: and a through hole is arranged in the high-resistance layer right below the gate electrode, so that the drain ohmic contact metal layer is communicated with the GaN channel layer, and a vertical conductive channel which is conductive by the drain ohmic contact metal layer is formed.
Further, the outer edge of the through hole in the high-resistance layer is smaller than the outer edge of the gate electrode, and the distance between the outer edge of the through hole in the high-resistance layer and the outer edge of the gate electrode is defined as L g ，1μm≤L g ≤10μm。
Preferably L g The difference from the high resistance layer thickness is less than 1 micron.
Further, an AlN layer is provided between the GaN channel layer and the AlGaN barrier layer, and the AlN layer is 0 to 5nm thick, and when the AlN layer is 0nm thick, the AlN layer is removed.
Furthermore, the high-resistance layer is GaN doped with C element or GaN doped with Fe element or AlGaN doped with C element or AlGaN doped with Fe element, and the thickness of the high-resistance layer is 1-10 mu m.
Further, the substrate is a material with good electric and thermal conductivity, such as Si, ge, cu, cu alloy, but not limited thereto.
Further, the GaN channel layer is an unintentionally doped GaN layer, and the thickness is 100 nm-500 nm.
Further, the AlGaN barrier layer is Al x Ga (1-x) And the thickness of the N layer is 10 nm-30 nm, wherein x is more than or equal to 0.1 and less than or equal to 0.5.
A manufacturing method of an AlGaN/GaN high electron mobility transistor with a normally-on vertical structure comprises the following steps:
(1) Providing a substrate, and sequentially growing HEMT epitaxial films comprising a buffer layer, a high-resistance layer, a GaN channel layer, an AlN layer and an AlGaN barrier layer on the substrate;
(2) Growing a passivation layer on the AlGaN barrier layer;
(3) Etching the passivation layer at the position where the source electrode is required to be manufactured by utilizing a photoetching technology, and manufacturing the source electrode by utilizing a stripping technology;
(4) Etching the passivation layer at the position where the gate electrode is required to be manufactured by utilizing a photoetching technology, and manufacturing the gate electrode by utilizing a stripping technology;
(5) Manufacturing an adhesive layer on the surface of the HEMT epitaxial film on which the source electrode and the gate electrode are manufactured;
(6) Providing a transition substrate, manufacturing a bonding layer on the front surface of the transition substrate, and manufacturing a protective layer on the back surface of the transition substrate;
(7) The HEMT epitaxial film with the source electrode and the gate electrode is stuck together with the transition substrate by using the bonding layer, the substrate and the buffer layer are corroded to obtain the transition HEMT epitaxial film, and the protection layer on the back surface of the transition substrate can ensure that the transition substrate is not corroded in the process of corroding the substrate and the buffer layer;
(8) Forming a through hole in the high-resistance layer of the corresponding region of the gate electrode of the transitional HEMT epitaxial film by utilizing a photoetching technology, and exposing the GaN channel layer at the position of the through hole, so that the outer edge of the through hole in the high-resistance layer is smaller than the outer edge of the gate electrode;
(9) Sequentially depositing a drain ohmic contact layer and a bonding metal layer on the transitional HEMT epitaxial film with the through holes;
(10) Providing a substrate, depositing a bonding metal layer on the front side of the substrate, manufacturing a drain electrode on the back side of the substrate, and binding the transitional HEMT epitaxial film and the substrate together by using the bonding metal layer;
(11) And removing the transition substrate protective layer, the transition substrate and the bonding layer to obtain the AlGaN/GaN high electron mobility transistor with the normally-on vertical structure.
Still further, the substrate is a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, or an aluminum nitride substrate.
Further, the bonding layer is a thermosetting adhesive, a hot-melt adhesive, a photo-curing organic adhesive, paraffin or low-melting-point metal.
Compared with the prior art, the invention has the following beneficial effects:
compared with the conventional AlGaN/GaN high-electron-mobility transistor with the conventional vertical structure, the structure provided by the invention does not need to adopt secondary epitaxy and ion implantation processes, and the interface pollution caused by secondary epitaxy and the adverse effects of lattice damage, complex process, higher cost and the like caused by ion implantation are radically eliminated. Meanwhile, unlike the conventional structure in which GaN doped with Si is used as a vertical conductive channel by ion implantation, the invention adopts metal as the vertical conductive channel, so that lower on-resistance can be obtained.
The outer edge of the through hole in the high-resistance layer is smaller than the outer edge of the gate electrode, and a proper distance is kept between the outer edge of the through hole in the high-resistance layer and the outer edge of the gate electrode, and the optimal size of the distance is close to the thickness of the high-resistance layer, so that when the vertical structure AlGaN/GaN high-electron mobility transistor is subjected to high voltage, an electric field can be uniformly distributed everywhere, but not mainly distributed in the area between the outer edge of the gate electrode and the outer edge of the through hole in the high-resistance layer, and the breakdown voltage of the vertical structure AlGaN/GaN high-electron mobility transistor is remarkably improved.
According to the method for manufacturing the vertical structure AlGaN/GaN high electron mobility transistor, the growth substrate is required to be removed, and the substrate with good electric conduction and heat conduction is selected as the electric conduction and heat dissipation channel, so that on one hand, the substrate with high quality GaN and low price can be selected when the growth substrate is selected, without considering electric conduction and heat conduction properties, such as a sapphire substrate, on the other hand, the substrate can also be made of materials with good electric conduction and heat conduction and low price, such as Cu, cu alloy, si and the like, so that the substrate selection is more flexible, and the comprehensive cost performance of the device is further improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a structure of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to the present invention.
Fig. 2 is a schematic diagram of a manufacturing method step 1 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 3 is a schematic diagram of a manufacturing method step 2 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 4 is a schematic diagram of a manufacturing method step 3 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 5 is a schematic diagram of a manufacturing method step 4 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 6 is a schematic diagram of a manufacturing method step 5 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 7 is a schematic diagram of a manufacturing method step 6 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 8 is a schematic diagram of a manufacturing method step 7 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 9 is a schematic diagram of a manufacturing method step 8 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 10 is a schematic diagram of a manufacturing method step 9 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 11 is a schematic diagram of a manufacturing method step 10 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Fig. 12 is a schematic diagram of a manufacturing method step 11 of an AlGaN GaN high electron mobility transistor with a normally-on vertical structure according to embodiment 1 of the present invention.
Illustration of: 100-HEMT epitaxial film, 101-drain electrode, 102-substrate, 103-bond metal layer, 104-drain ohmic contact metal layer, 105-high resistance layer, 106-GaN channel layer, 107-AlN layer, 108-AlGaN barrier layer, 109-passivation layer, 110-source electrode, 111-gate electrode, 112-via, 113-substrate, 114-buffer layer, 115-bonding layer, 116-transition substrate, 117-protection layer, 200-transition HEMT epitaxial film.
Detailed Description
The invention is further described below with reference to the drawings and examples.
Example 1:
as shown in fig. 1, the structure of the AlGaN/GaN high electron mobility transistor with a normally-on vertical structure according to the present invention sequentially includes, from bottom to top: a drain electrode 101, a substrate 102, a bonding metal layer 103, a drain ohmic contact metal layer 104, a high-resistance layer 105, a GaN channel layer 106, an AlGaN barrier layer 108, a passivation layer 109, a source electrode 110, and a gate electrode 111, characterized in that: a through hole 112 is provided in the high-resistance layer 105 directly under the gate electrode 111, so that the drain ohmic contact metal layer 103 is communicated with the GaN channel layer 106, and a vertical conductive channel is formed through which the drain ohmic contact metal layer is conductive.
The outer edge of the via 112 in the high-resistance layer 105 is smaller than the outer edge of the gate electrode, and the distance between the outer edge of the via in the high-resistance layer and the outer edge of the gate electrode is defined as L g ，1μm≤L g Less than or equal to 10 μm, preferably L g The difference from the high resistance layer thickness is less than 1 micron.
An AlN layer 107 is provided between the GaN channel layer 106 and the AlGaN barrier layer 108, and the AlN layer 107 has a thickness of 0 to 5nm, and when the AlN layer 107 has a thickness of 0nm, the AlN layer is removed.
The high-resistance layer 105 is GaN or AlGaN doped with C or Fe, and the thickness of the high-resistance layer 105 is 1-10 mu m.
The substrate 102 is a material with good electrical and thermal conductivity, such as Si, ge, cu, cu alloy, but not limited thereto.
The GaN channel layer 106 is an unintentionally doped GaN layer, and has a thickness of 100 nm-500 nm.
The AlGaN barrier layer 108 is Al x Ga (1-x) And the thickness of the N layer is 10 nm-30 nm, wherein x is more than or equal to 0.1 and less than or equal to 0.5.
The invention discloses a manufacturing method of an AlGaN/GaN high electron mobility transistor with a normally-on vertical structure, which comprises the following steps:
(1) As shown in fig. 2, a substrate 113 is provided, and a HEMT epitaxial thin film 100 including a buffer layer 114, a high-resistance layer 105, a GaN channel layer 106, an AlN layer 107, and an AlGaN barrier layer 108 is sequentially grown on the substrate 113;
(2) As shown in fig. 3, a passivation layer 109 is grown on the AlGaN barrier layer 108;
(3) As shown in fig. 4, the passivation layer 109 at the position where the source electrode 110 is to be formed is etched away by using a photolithography etching technique, and then the source electrode 110 is formed by using a lift-off technique;
(4) As shown in fig. 5, the passivation layer 109 at the position where the gate electrode 111 is to be formed is etched away by using a photolithography etching technique, and then the gate electrode 111 is formed by using a lift-off technique;
(5) As shown in fig. 6, an adhesive layer 115 is formed on the surface of the HEMT epitaxial film on which the source electrode 110 and the gate electrode 111 are formed;
(6) As shown in fig. 7, a transition substrate 116 is provided, an adhesive layer 115 is formed on the front surface of the transition substrate, a protective layer 117 is formed on the back surface of the transition substrate, and a HEMT epitaxial film on which a source electrode 110 and a gate electrode 111 are formed is bonded to the transition substrate 116 by the adhesive layer 115;
(7) As shown in fig. 8, the substrate 113 and the buffer layer 114 are etched away to obtain a transitional HEMT epitaxial film 200, and in the process of etching the substrate 113 and the buffer layer 114, the protective layer 117 on the opposite side of the transitional substrate 116 can ensure that the transitional substrate 116 is not corroded;
(8) As shown in fig. 9, a through hole 112 is formed in the high-resistance layer 105 in the region corresponding to the gate electrode 111 of the transitional HEMT epitaxial thin film 200 by photolithography and etching, and the GaN channel layer 106 is exposed at the position of the through hole 112, so that the outer edge of the through hole 112 in the high-resistance layer 105 is smaller than the outer edge of the gate electrode 111;
(9) As shown in fig. 10, a drain ohmic contact layer 104 and a bonding metal layer 103 are sequentially deposited on the transitional HEMT epitaxial film 200 on which the through-hole 112 is formed;
(10) As shown in fig. 11, a substrate 102 is provided, a bonding metal layer 103 is deposited on the front surface of the substrate, a drain electrode 101 is manufactured on the back surface of the substrate, and a transition HEMT epitaxial film 200 and the substrate 102 are bound together by using the bonding metal layer 103;
(11) As shown in fig. 12, the protective layer 117, the transition substrate 116, and the adhesive layer 115 are removed to obtain an AlGaN/GaN high electron mobility transistor of a normally-on vertical structure.
The substrate 113 is a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, or an aluminum nitride substrate.
The adhesive layer 115 is a thermosetting adhesive, a hot-melt adhesive, a photo-curable organic adhesive, paraffin wax or a low-melting metal.
As shown in FIG. 1, the working principle of the AlGaN/GaN high electron mobility transistor structure with the normally-on vertical structure is as follows: when the gate voltage is zero or the gate voltage is lower than the threshold voltage, there is a two-dimensional electron gas under the gate electrode 111, electrons are transported from the source electrode 110 along the two-dimensional electron gas layer at the interface of the GaN channel layer 106 and the AlGaN barrier layer 108, and when transported over the vertical conduction channel formed by the drain ohmic contact metal, electrons are transported along the vertical conduction channel in the vertical direction and reach the drain electrode 101 due to the lower resistance of the vertical conduction channel compared to the surrounding high resistance layer, at this time the AlGaN/GaN high electron mobility transistor is in the on state, representing typical normally-on AlGaN/GaN high electron mobility transistor characteristics, and is a vertical structure AlGaN/GaN high electron mobility transistor in which current flows in the vertical direction; when the gate voltage is greater than the threshold voltage, the two-dimensional electron gas below the gate electrode 111 is depleted, the AlGaN/GaN HEMT is in the off state, and electrons cannot be transferred between the source and drain.
The foregoing description of the preferred embodiments of the present invention has been presented only in terms of those specific and detailed descriptions, and is not, therefore, to be construed as limiting the scope of the invention. It should be noted that modifications, improvements and substitutions can be made by those skilled in the art without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (9)
1. A normally-on high electron mobility transistor structure includes, in order from bottom to top: drain electrode, base plate, bonding metal layer, drain ohmic contact metal layer, high resistance layer, gaN channel layer, alGaN barrier layer, passivation layer, source electrode and gate electrode, its characterized in that: and a through hole is arranged in the high-resistance layer right below the gate electrode, so that the drain ohmic contact metal layer is communicated with the GaN channel layer, and a vertical conductive channel which is conductive by the drain ohmic contact metal layer is formed.
2. A normally-on high electron mobility transistor structure according to claim 1, characterized in that: the outer edge of the through hole in the high-resistance layer is smaller than the outer edge of the gate electrode, and the distance between the outer edge of the through hole in the high-resistance layer and the outer edge of the gate electrode is Lg, wherein Lg is more than or equal to 1 mu m and less than or equal to 10 mu m.
3. A normally-on high electron mobility transistor structure according to claim 2, characterized in that: the difference between Lg and the high resistance layer thickness is less than 1 micron.
4. A normally-on high electron mobility transistor structure according to claim 1, characterized in that: an AlN layer is arranged between the GaN channel layer and the AlGaN barrier layer, and the thickness of the AlN layer is 0-5 nm; the high-resistance layer is doped with GaN of C element or doped with GaN of Fe element or doped with AlGaN of C element or doped with AlGaN of Fe element, and the thickness of the high-resistance layer is 1-10 mu m.
5. A normally-on high electron mobility transistor structure according to claim 1, characterized in that: the substrate is made of a material with good electric conduction and heat conduction.
6. The normally-on high electron mobility transistor structure of claim 5, wherein: the substrate is Si, ge, cu or Cu alloy, but is not limited thereto.
7. A normally-on high electron mobility transistor structure according to claim 1, characterized in that: the GaN channel layer is an unintentionally doped GaN layer with the thickness of 100-500 nm, the AlGaN barrier layer is an AlxGa (1-x) N layer with the thickness of 10-30 nm, wherein x is more than or equal to 0.1 and less than or equal to 0.5.
8. A method of manufacturing a normally-on high electron mobility transistor structure according to any of claims 1 to 7, comprising the steps of:
(1) Providing a substrate, and sequentially growing HEMT epitaxial films comprising a buffer layer, a high-resistance layer, a GaN channel layer, an AlN layer and an AlGaN barrier layer on the substrate;
(2) Growing a passivation layer on the AlGaN barrier layer;
(3) Etching the passivation layer at the position where the source electrode is required to be manufactured by utilizing a photoetching technology, and manufacturing the source electrode by utilizing a stripping technology;
(4) Etching the passivation layer at the position where the gate electrode is required to be manufactured by utilizing a photoetching technology, and manufacturing the gate electrode by utilizing a stripping technology;
(5) Manufacturing an adhesive layer on the surface of the HEMT epitaxial film on which the source electrode and the gate electrode are manufactured;
(6) Providing a transition substrate, manufacturing a bonding layer on the front surface of the transition substrate, and manufacturing a protective layer on the back surface of the transition substrate;
(7) The HEMT epitaxial film with the source electrode and the gate electrode is stuck together with the transition substrate by using the bonding layer, the substrate and the buffer layer are corroded to obtain the transition HEMT epitaxial film, and the protection layer on the back surface of the transition substrate can ensure that the transition substrate is not corroded in the process of corroding the substrate and the buffer layer;
(8) Forming a through hole in the high-resistance layer of the corresponding region of the gate electrode of the transitional HEMT epitaxial film by utilizing a photoetching technology, and exposing the GaN channel layer at the position of the through hole, so that the outer edge of the through hole in the high-resistance layer is smaller than the outer edge of the gate electrode;
(9) Sequentially depositing a drain ohmic contact layer and a bonding metal layer on the transitional HEMT epitaxial film with the through holes;
(10) Providing a substrate, depositing a bonding metal layer on the front side of the substrate, manufacturing a drain electrode on the back side of the substrate, and binding the transitional HEMT epitaxial film and the substrate together by using the bonding metal layer;
(11) And removing the transition substrate protective layer, the transition substrate and the bonding layer to obtain the AlGaN/GaN high electron mobility transistor with the normally-on vertical structure.
9. The method of manufacturing a normally-on high electron mobility transistor structure of claim 8, wherein: the substrate is a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate or an aluminum nitride substrate; the bonding layer is a thermosetting adhesive, a hot-melt adhesive, a photo-curing organic adhesive, paraffin or low-melting-point metal.
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| WO2008096521A1 (en) * | 2007-02-07 | 2008-08-14 | Nec Corporation | Semiconductor device |
| JP2008270310A (en) * | 2007-04-17 | 2008-11-06 | Toyota Central R&D Labs Inc | Group iii nitride compound semiconductor vertical type transistor and its manufacturing method |
| CN103985742A (en) * | 2013-02-12 | 2014-08-13 | 首尔半导体株式会社 | Vertical gallium nitride transistors and methods of fabricating the same |
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