CN111850496A - RF and PVD system for manufacturing solid-state thin film battery - Google Patents

RF and PVD system for manufacturing solid-state thin film battery Download PDF

Info

Publication number
CN111850496A
CN111850496A CN202010739779.4A CN202010739779A CN111850496A CN 111850496 A CN111850496 A CN 111850496A CN 202010739779 A CN202010739779 A CN 202010739779A CN 111850496 A CN111850496 A CN 111850496A
Authority
CN
China
Prior art keywords
evaporation
head
sample table
thin film
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010739779.4A
Other languages
Chinese (zh)
Inventor
方辉
邾根祥
陶育飞
朱沫邑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Kejing Materials Technology Co ltd
Original Assignee
Hefei Kejing Materials Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Kejing Materials Technology Co ltd filed Critical Hefei Kejing Materials Technology Co ltd
Priority to CN202010739779.4A priority Critical patent/CN111850496A/en
Publication of CN111850496A publication Critical patent/CN111850496A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/04—Construction or manufacture in general
    • H01M10/0404—Machines for assembling batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H01M4/0426—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/06—Electrodes for primary cells
    • H01M4/08—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/005—Devices for making primary cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses an RF and PVD system for manufacturing a solid-state thin-film battery, which comprises a vacuum chamber positioned in a glove box, wherein a sample table for clamping a sheet-shaped substrate is arranged in the vacuum chamber, the table surface of the sample table is arranged downwards, a sputtering mechanism for forming an anode by sputtering and coating a film on the surface of the substrate and an evaporation mechanism for forming a cathode by evaporating and coating the film on the surface of the substrate are respectively arranged below the sample table.

Description

RF and PVD system for manufacturing solid-state thin film battery
Technical Field
The present invention relates to the field of solid state batteries, and in particular to an RF and PVD system for fabricating solid state thin film batteries.
Background
At present, a solid-state battery preparation system is widely applied to research institutes and experiments. Most of solid-state battery preparation in the prior art is coated with positive and negative electrode materials on the surface, and the equipment for manufacturing the solid-state battery in a glove box by Radio Frequency (RF) and vapor deposition (PVD) is not related at home.
Disclosure of Invention
In order to solve the technical problems, the invention provides an RF and PVD system for manufacturing a solid-state thin-film battery, which comprises a vacuum chamber positioned in a glove box, wherein a sample table for clamping a sheet-shaped substrate is arranged in the vacuum chamber, the table top of the sample table is arranged downwards, and a sputtering mechanism for forming a positive electrode by sputtering and coating a film on the surface of the substrate and an evaporation mechanism for forming a negative electrode by evaporating and coating the film on the surface of the substrate are respectively arranged below the sample table.
Preferably: the sputtering mechanism comprises a magnetron sputtering target head and a radio frequency power supply, the magnetron sputtering target head is arranged in the vacuum chamber, the magnetron sputtering target head points to the sample table and is used for sputtering the anode material on the substrate on the sample table, and the radio frequency power supply is connected with the magnetron sputtering target head.
Preferably: the evaporation mechanism comprises an evaporation head and an evaporation power supply, the evaporation head is arranged in the vacuum chamber, the evaporation head points to the sample table and is used for evaporating the negative electrode material to the substrate on the sample table, and the evaporation power supply is connected with the evaporation head.
Preferably: two sets of evaporation boats, namely a stainless steel evaporation boat and an alumina evaporation boat, are arranged in the evaporation head.
Preferably: the vacuum chamber is internally provided with a baffle adjusting mechanism, the baffle adjusting mechanism comprises two baffles and a regulating and controlling assembly, the two baffles are respectively arranged corresponding to the magnetron sputtering target head and the evaporation head, the regulating and controlling assembly regulates the two baffles to be in two states, one of the two states is: one baffle plate shields the evaporation working state of the magnetron sputtering target head, and the other baffle plate does not shield the evaporation working state of the evaporation head, and the second baffle plate is as follows: one baffle plate does not shield the sputtering working state of the magnetron sputtering target head and the other baffle plate shields the evaporation head.
Preferably: the regulation and control subassembly includes the pivot, and the pivot is arranged along the plummet direction, and the pivot is located between magnetron sputtering target head and the evaporation head, and two baffles fixed mounting are in the pivot upper end, and the pivot lower extreme passes the vacuum chamber and connects the regulation and control motor.
Preferably: the sample platform is connected with a rotation regulating mechanism, and the rotation regulating mechanism is used for driving the sample platform to rotate around the central line of the sample platform in the plumb direction.
Preferably: the sample stage is provided with a heating device for heating the substrate.
Preferably: and a film thickness gauge for measuring the thickness of the anode and cathode materials is arranged on one side of the sample table.
Preferably: the vacuum chamber is a closed chamber made of stainless steel materials and is connected with a vacuum pump.
The invention has the technical effects and advantages that: compared with the conventional solid-state battery preparation, the material is not easy to oxidize, the anode material and the cathode material are more convenient to manufacture, the method is particularly suitable for the research on the solid-state battery by using research institutes and colleges, each control part adopts modularization, can be freely selected, and provides greater possibility for the research on the solid-state battery manufacture;
the invention has stable structure, reasonable layout and stable operation, can realize the sputtering and evaporation of the substrate to manufacture the anode and the cathode, realizes the preparation of the thin film battery electrode and meets the research and use requirements of the laboratory in China.
Drawings
FIG. 1 is a schematic diagram of an RF and PVD system for fabricating a solid state thin film battery in accordance with one embodiment of the invention;
fig. 2 is a schematic diagram of the structure within the vacuum chamber of an RF and PVD system for making solid state thin film batteries in accordance with one embodiment of the invention.
Description of reference numerals: 100-glove box, 200-vacuum chamber, 210-sealing door, 220-observation window, 230-quartz oscillation thickness gauge, 240-regulation motor, 250-rotating shaft, 260-baffle, 270-vacuum pump, 300-sample table, 310-heating device, 320-rotation regulation mechanism, 400-sputtering mechanism, 410-magnetron sputtering target head, 420-radio frequency power supply, 430-water cooler, 500-evaporation mechanism, 510-evaporation head, 520-evaporation power supply and 600-control box.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Examples
The invention is further described below with reference to fig. 1 and 2 in conjunction with the accompanying drawings:
an RF and PVD system for manufacturing a solid-state thin film battery comprises a vacuum chamber 200 positioned in a glove box 100, wherein a sample table 300 for clamping a sheet-shaped substrate is arranged in the vacuum chamber 200, the table surface of the sample table 300 is arranged downwards, a sputtering mechanism 400 for forming a positive electrode by sputtering and coating a film on the surface of the substrate and an evaporation mechanism 500 for forming a negative electrode by evaporating and coating the film on the surface of the substrate are respectively arranged below the sample table 300.
The sputtering mechanism 400 comprises a magnetron sputtering target head 410 and a radio frequency power supply 420, wherein the magnetron sputtering target head 410 is arranged in the vacuum chamber 200, the magnetron sputtering target head 410 points to the sample table 300 and is used for sputtering the anode material on the substrate on the sample table 300, and the radio frequency power supply 420 is connected with the magnetron sputtering target head 410.
The evaporation mechanism 500 comprises an evaporation head 510 and an evaporation power supply 520, wherein the evaporation head 510 is arranged in the vacuum chamber 200, the evaporation head 510 points to the sample stage 300 for evaporating the negative electrode material to the substrate on the sample stage 300, and the evaporation power supply 520 is connected with the evaporation head 510.
Two sets of evaporation boats, namely a stainless steel evaporation boat and an alumina evaporation boat, are arranged in the evaporation head 510.
The vacuum chamber 200 is internally provided with a baffle adjusting mechanism, the baffle adjusting mechanism comprises two baffles 260 and a regulating and controlling component, the two baffles 260 are respectively arranged corresponding to the magnetron sputtering target head 410 and the evaporation head 510, and the regulating and controlling component regulates the two baffles 260 to be in two states, one of which is: the first baffle 260 shields the magnetron sputtering target head 410, and the second baffle does not shield the evaporation working state of the evaporation head 510, and the two are: one of the baffles 260 does not shield the magnetron sputtering target head 410 and the other shields the evaporation head 510 from the sputtering operation.
The regulating and controlling assembly comprises a rotating shaft 250, the rotating shaft 250 is arranged along the plumb direction, the rotating shaft 250 is positioned between the magnetron sputtering target head 410 and the evaporation head 510, the two baffles 260 are fixedly arranged at the upper end of the rotating shaft 250, and the lower end of the rotating shaft 250 penetrates through the vacuum chamber to be connected with the regulating and controlling motor 240.
The sample stage 300 is connected with a rotation regulating mechanism 320, the rotation regulating mechanism 320 is used for driving the sample stage 300 to rotate around the central line of the plumb direction of the sample stage, the rotation regulating mechanism 320 comprises a sample stage rotating motor, and the sample stage rotating motor drives the sample stage 300 to rotate through a gear transmission assembly.
The sample stage 300 is provided with a heating device 310 for heating the substrate, and the heating device 310 is used for heating the substrate, so that the substrate can be heated to increase the adhesion capability of the substrate in the sputtering or evaporation process, and the stress of the attached anode material and cathode material can be eliminated after the sputtering and evaporation are finished.
The sample stage 300 is further provided with a clamp for clamping the substrate.
A film thickness gauge for measuring the thickness of the anode and cathode materials is installed on one side of the sample stage 300.
The vacuum chamber 200 is a closed chamber made of stainless steel material, and the vacuum chamber 200 is connected with a vacuum pump 270.
The glove box adopts German BASF deoxidization materials and American UOP high-efficiency water absorption materials, the water and oxygen components in the glove box can continuously maintain a high-cleanness and high-purity gas environment with the gas purity below 1ppm for a long time, the control box 600 is also arranged outside the glove box 100, and the glove box operation panel and the sputtering evaporation operation panel are arranged on the control box 600.
The vacuum chamber is made of 304 stainless steel material, and is provided with a viewing window 220 for allowing a client to view the sputtering process, and is connected with a vacuum pump through a vacuumizing hole by 304.
The invention is provided with a set of radio frequency power supply and two sets of evaporation power supply parts, and sputtering and evaporation are carried out through experimental requirements such as power input, heating current regulation and the like, so that the film coating of a substrate is ensured.
The water cooler 430 is further arranged on the outer side of the glove box 100, and the water cooler 430 cools the sputtering target head so as to ensure that the target head can normally work in the sputtering process.
The vacuum pump disclosed by the invention vacuumizes the stainless steel cavity through the electric gate valve, so as to meet the experimental requirements.
The heating device 310 is ceramic heating equipment, can be heated to 500 ℃, enables the film covering effect of the substrate to be better, and can also eliminate the film covering stress.
The sample stage rotating motor drives the sample stage 300 to rotate, so that the film can be uniformly distributed on the substrate in the sputtering or evaporation process.
The thin film thickness gauge of the present invention is a quartz oscillation thickness gauge 230, which is capable of measuring the thickness of a laminated thin film by inputting the density of an evaporated or sputtered material into a test system according to the change of the oscillation frequency of a quartz wafer caused by the change of the thickness of the thin film of a measured sample.
When the vacuum pump part works, firstly, the vacuum degree of a stainless steel vacuum chamber is pumped to a numerical value required by an experiment, a water cooler and a radio frequency power supply are opened, high-purity argon is introduced, the power of the radio frequency power supply is adjusted to carry out sputtering, and a sputtering coating is attached to a substrate to form a positive electrode material; and adjusting the whole control circuit part to control the evaporation power supply instrument, controlling the current, adjusting the current according to the actual condition, and waiting for the metal materials to be completely melted and evaporated so as to evaporate and attach the metal materials on the substrate to form the cathode material.
Compared with the conventional solid-state battery preparation, the material is not easy to oxidize, the anode material and the cathode material are more convenient to manufacture, the method is particularly suitable for the research on the solid-state battery by using research institutes and colleges, each control part adopts modularization, can be freely selected, and provides greater possibility for the research on the solid-state battery manufacture;
the invention has stable structure, reasonable layout and stable operation, can realize the sputtering and evaporation of the substrate to manufacture the anode and the cathode, realizes the preparation of the thin film battery electrode and meets the research and use requirements of the laboratory in China.
It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by one of ordinary skill in the art and related arts based on the embodiments of the present invention without any creative effort, shall fall within the protection scope of the present invention. Structures, devices, and methods of operation not specifically described or illustrated herein are generally practiced in the art without specific recitation or limitation.

Claims (10)

1. An RF and PVD system for fabricating a solid state thin film battery, comprising: the device comprises a vacuum chamber (200) positioned in a glove box (100), wherein a sample table (300) used for clamping a sheet-shaped substrate is arranged in the vacuum chamber (200), the table surface of the sample table (300) is arranged downwards, and a sputtering mechanism (400) used for forming a positive electrode by sputtering and coating a film on the surface of the substrate and an evaporation mechanism (500) used for forming a negative electrode by evaporating and coating the film on the surface of the substrate are respectively arranged below the sample table (300).
2. An RF and PVD system for making solid state thin film batteries according to claim 1, wherein: the sputtering mechanism (400) comprises a magnetron sputtering target head (410) and a radio frequency power supply (420), the magnetron sputtering target head (410) is arranged in the vacuum chamber (200), the magnetron sputtering target head (410) points to the sample table (300) and is used for sputtering anode materials on a substrate on the sample table (300), and the radio frequency power supply (420) is connected with the magnetron sputtering target head (410).
3. An RF and PVD system for making solid state thin film batteries according to claim 1, wherein: the evaporation mechanism (500) comprises an evaporation head (510) and an evaporation power supply (520), the evaporation head (510) is arranged in the vacuum chamber (200), the evaporation head (510) points to the sample table (300) and is used for evaporating the negative electrode material to the substrate on the sample table (300), and the evaporation power supply (520) is connected with the evaporation head (510).
4. An RF and PVD system for making solid state thin film batteries according to claim 3, wherein: two sets of evaporation boats, namely a stainless steel evaporation boat and an alumina evaporation boat, are arranged in the evaporation head (510).
5. An RF and PVD system for making solid state thin film batteries according to claim 2 or 3, wherein: the vacuum chamber (200) is equipped with baffle adjustment mechanism in, baffle adjustment mechanism includes two baffles (260) and regulation and control subassembly, and two baffles (260) correspond the setting with magnetron sputtering target head (410), evaporation head (510) respectively, and two baffles (260) are in two kinds of states to regulation and control subassembly regulation, and one of them is: one baffle (260) shields the magnetron sputtering target head (410) and the other baffle does not shield the evaporation working state of the evaporation head (510), and the other baffle is as follows: one baffle (260) does not shield the magnetron sputtering target head (410) and the other baffle shields the sputtering working state of the evaporation head (510).
6. An RF and PVD system for making solid state thin film batteries according to claim 5, wherein: the regulation and control subassembly includes pivot (250), and pivot (250) are arranged along the plummet direction, and pivot (250) are located between magnetron sputtering target head (410) and evaporation head (510), and two baffles (260) fixed mounting are in pivot (250) upper end, and pivot (250) lower extreme passes the vacuum chamber and connects regulation and control motor (240).
7. An RF and PVD system for making solid state thin film batteries according to claim 1, wherein: the sample table (300) is connected with a rotation regulating mechanism (320), and the rotation regulating mechanism (320) is used for driving the sample table (300) to rotate around the central line of the plumb direction of the sample table.
8. An RF and PVD system for making solid state thin film batteries according to claim 1, wherein: the sample table (300) is provided with a heating device (310) for heating the substrate.
9. An RF and PVD system for making solid state thin film batteries according to claim 1, wherein: and a film thickness gauge for measuring the thickness of the anode and cathode materials is arranged on one side of the sample table (300).
10. An RF and PVD system for making solid state thin film batteries according to claim 1, wherein: the vacuum chamber (200) is a closed chamber made of stainless steel materials, and the vacuum chamber (200) is connected with a vacuum pump (270).
CN202010739779.4A 2020-07-28 2020-07-28 RF and PVD system for manufacturing solid-state thin film battery Pending CN111850496A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010739779.4A CN111850496A (en) 2020-07-28 2020-07-28 RF and PVD system for manufacturing solid-state thin film battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010739779.4A CN111850496A (en) 2020-07-28 2020-07-28 RF and PVD system for manufacturing solid-state thin film battery

Publications (1)

Publication Number Publication Date
CN111850496A true CN111850496A (en) 2020-10-30

Family

ID=72948367

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010739779.4A Pending CN111850496A (en) 2020-07-28 2020-07-28 RF and PVD system for manufacturing solid-state thin film battery

Country Status (1)

Country Link
CN (1) CN111850496A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260724A (en) * 1998-03-16 1999-09-24 Matsushita Electric Ind Co Ltd Method and device for manufacturing compound semiconductor thin film
CN101275218A (en) * 2008-05-21 2008-10-01 兰州大学 Film preparation device and observation method for film growth
CN204369977U (en) * 2014-12-27 2015-06-03 南京新月材料科技有限公司 A kind of magnetron sputtered vacuum electron beam evaporation plating system
CN108511543A (en) * 2018-01-25 2018-09-07 北京创昱科技有限公司 A kind of integrated energy resource supply product and preparation method thereof and equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260724A (en) * 1998-03-16 1999-09-24 Matsushita Electric Ind Co Ltd Method and device for manufacturing compound semiconductor thin film
CN101275218A (en) * 2008-05-21 2008-10-01 兰州大学 Film preparation device and observation method for film growth
CN204369977U (en) * 2014-12-27 2015-06-03 南京新月材料科技有限公司 A kind of magnetron sputtered vacuum electron beam evaporation plating system
CN108511543A (en) * 2018-01-25 2018-09-07 北京创昱科技有限公司 A kind of integrated energy resource supply product and preparation method thereof and equipment

Similar Documents

Publication Publication Date Title
US7678241B2 (en) Film forming apparatus, substrate for forming oxide thin film and production method thereof
JP4728143B2 (en) Thin film forming equipment
KR20080059304A (en) Film forming apparatus method of forming film
CN107012439A (en) A kind of scandium doped aluminum nitride film and preparation method thereof
CN105714256A (en) Method for low-temperature preparation of DLC film through magnetron sputtering
CN112159967B (en) Ion beam deposition equipment for infrared metal film and film deposition method
CN111850496A (en) RF and PVD system for manufacturing solid-state thin film battery
CN110344013A (en) Sputtering method
CN101424653A (en) Zinc oxide doped air-sensitive film preparation method
CN1459515A (en) Multiion cluster cosputtering settling nano film apparatus
CN217809637U (en) Efficient physical vapor deposition equipment
JPS6335709B2 (en)
JP4521606B2 (en) Method and apparatus for controlling film thickness distribution in thin film manufacturing apparatus
CN105220123A (en) A kind of magnetron sputtering prepares the method for BMN film
JP3441002B2 (en) Sputtering equipment
CN101812666B (en) Preparation method of vanadium oxide thin film material for non-refrigerated infrared focal plane array
JPH11260724A (en) Method and device for manufacturing compound semiconductor thin film
JPS5850419B2 (en) Method for manufacturing piezoelectric thin film
CN110735121A (en) method for preparing unconventional refractive index mixed film based on magnetron sputtering
CN220246240U (en) Film coating device for improving internal stress of film
JP3036895B2 (en) Sputtering equipment
KR20210078555A (en) Deposition process for piezoelectric coatings
CN220149647U (en) Magnetron sputtering coating device
Zhang Research on Equipment of Magnetron Sputtering and Deposition of ZnO Films
JP2008202087A (en) Metallic compound film, method for forming the same, and film formation device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20201030