CN111850474A - Antenna oscillator preparation method and antenna oscillator - Google Patents
Antenna oscillator preparation method and antenna oscillator Download PDFInfo
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- CN111850474A CN111850474A CN202010574000.8A CN202010574000A CN111850474A CN 111850474 A CN111850474 A CN 111850474A CN 202010574000 A CN202010574000 A CN 202010574000A CN 111850474 A CN111850474 A CN 111850474A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 47
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 46
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 claims abstract description 43
- 239000010949 copper Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 33
- 230000008569 process Effects 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 238000009713 electroplating Methods 0.000 claims abstract description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 9
- 230000008719 thickening Effects 0.000 claims abstract description 6
- 229920010524 Syndiotactic polystyrene Polymers 0.000 claims description 52
- 239000003365 glass fiber Substances 0.000 claims description 26
- 239000002131 composite material Substances 0.000 claims description 23
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 21
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 21
- 238000012360 testing method Methods 0.000 claims description 13
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 11
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- GVLZQVREHWQBJN-UHFFFAOYSA-N 3,5-dimethyl-7-oxabicyclo[2.2.1]hepta-1,3,5-triene Chemical compound CC1=C(O2)C(C)=CC2=C1 GVLZQVREHWQBJN-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 3
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 3
- 229920000930 2, 6-dimethyl-1, 4-phenylene oxide Polymers 0.000 claims description 2
- 238000005488 sandblasting Methods 0.000 abstract description 15
- 238000010309 melting process Methods 0.000 abstract description 7
- 239000000428 dust Substances 0.000 abstract description 6
- 239000002699 waste material Substances 0.000 abstract description 6
- 239000002351 wastewater Substances 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 230000008054 signal transmission Effects 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 238000001035 drying Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000004506 ultrasonic cleaning Methods 0.000 description 8
- 230000032798 delamination Effects 0.000 description 7
- 238000000678 plasma activation Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 6
- 238000005187 foaming Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000001746 injection moulding Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Details Of Aerials (AREA)
Abstract
The invention discloses a preparation method of an antenna oscillator, which comprises the following steps of S1, obtaining a base material of the antenna oscillator; s2, forming a metal layer on the surface of the base material through a Physical Vapor Deposition (PVD) process, wherein the metal layer can be a nickel layer/copper layer or a nickel layer/copper layer/nickel layer which are arranged from inside to outside; s3, processing a functional circuit on the metal layer by using a UV laser; s4, thickening the copper layer of the functional circuit by electroplating; s5, removing the metal layer outside the functional circuit by using a chemical solvent; and S6, forming a tin layer on the copper layer through electricity. The surface of the base material is metallized by adopting a Physical Vapor Deposition (PVD) process to replace a sand blasting and nickel melting process in the prior art, so that the stability of signal transmission of the antenna oscillator is improved, meanwhile, the harm of small-particle dust and noise generated by sand blasting to production personnel, environment and equipment is avoided, the waste water generated by the nickel melting process is reduced, the production process of the antenna oscillator is more environment-friendly, the resource waste is reduced, and the production cost is lowered.
Description
Technical Field
The invention relates to the technical field of antennas, in particular to an antenna oscillator and a preparation method thereof.
Background
The antenna oscillator is an important component in an antenna, has the functions of guiding and amplifying electromagnetic waves, is used for enhancing electromagnetic signals received by the antenna, and is widely used in various antennas.
At present, the antenna oscillator generally adopts glass fiber reinforced PPS as a base material, and the density of the glass fiber reinforced PPS base material is higher and the dielectric loss under high frequency is higher. The existing forming process of the antenna oscillator generally comprises the steps of injection molding, sand blasting, nickel melting, laser etching, copper electroplating, nickel removing, tin electroplating and the like, and the forming process is complex and is not environment-friendly. Especially, a lot of fine dust is generated in the sand blasting process, and along with great noise, serious potential harm is caused to production personnel, environment and equipment, the roughness of the surface of the antenna oscillator is increased by sand blasting, the signal stability of the antenna oscillator is reduced, a large amount of waste water is generated in the nickel melting process, environment pollution and water resource waste are caused, and the processes need large equipment investment and raw material cost.
Therefore, an antenna oscillator preparation method is needed to optimize the existing antenna oscillator metallization process, reduce environmental pollution and save production cost.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the antenna oscillator and the preparation method thereof are capable of reducing environmental pollution, reducing process cost and improving product performance.
In order to solve the technical problems, the invention adopts the technical scheme that: a preparation method of an antenna oscillator comprises the following steps of S1, obtaining a base material of the antenna oscillator; s2, forming a metal layer on the surface of the base material through a Physical Vapor Deposition (PVD) process, wherein the metal layer can be a nickel layer/copper layer or a nickel layer/copper layer/nickel layer which are arranged from inside to outside; s3, processing a functional circuit on the metal layer by using an infrared or Ultraviolet (UV) laser; s4, thickening the copper layer of the functional circuit through electroplating; s5, removing the nickel layer outside the functional circuit by using a chemical solvent; and S6, forming a tin layer on the copper layer through electroplating.
In order to solve the technical problems, the invention also adopts the following technical scheme: an antenna oscillator is obtained by the antenna oscillator preparation method.
The invention has the beneficial effects that: the surface of the substrate is metallized by adopting a Physical Vapor Deposition (PVD) process to replace a sand blasting and nickel melting process in the prior art, the increase of the surface roughness of the substrate caused by sand blasting is avoided, the stability of signal transmission of the antenna oscillator is improved, meanwhile, the damage of small-particle dust and noise generated by sand blasting to production personnel, environment and equipment is avoided, the waste water generated by the nickel melting process is reduced, the production process of the antenna oscillator is more environment-friendly, the waste of resources is reduced, and the production cost is reduced.
Detailed Description
In order to explain the technical content, the objects and the effects of the present invention in detail, the following description will be given with reference to the embodiments.
The most key concept of the invention is as follows: the Physical Vapor Deposition (PVD) process is adopted to replace the sand blasting and nickel melting process in the prior art.
A preparation method of an antenna oscillator comprises the following steps of S1, obtaining a base material of the antenna oscillator; s2, forming a metal layer on the surface of the base material through a Physical Vapor Deposition (PVD) process, wherein the metal layer can be a nickel layer/copper layer or a nickel layer/copper layer/nickel layer which are arranged from inside to outside; s3, processing a functional circuit on the metal layer by using an infrared or Ultraviolet (UV) laser; s4, thickening the copper layer of the functional circuit through electroplating; s5, removing the nickel layer outside the functional circuit by using a chemical solvent; and S6, forming a tin layer on the copper layer through electroplating.
The principle of the invention is briefly described as follows: a Physical Vapor Deposition (PVD) process replaces the processes of sand blasting and nickel melting in the traditional process flow, a metal layer is formed on the surface of the base material, and then a functional circuit is processed on the metal layer, and the antenna oscillator function is realized through the processes of copper electroplating, nickel stripping, tin electroplating and the like.
From the above description, the beneficial effects of the present invention are: the harm of small-particle dust and noise generated by sand blasting to production personnel, environment and equipment is avoided, the waste water generated by the nickel melting process is reduced, the production process of the antenna oscillator is more environment-friendly, and the reduction of resource waste and the reduction of production cost are facilitated.
Further, in step S1, the base material is one or more of Syndiotactic Polystyrene (SPS), Liquid Crystal Polymer (LCP), syndiotactic polystyrene/glass fiber (SPS/GF) composite material, liquid crystal polymer/glass fiber (LCP/GF) composite material, syndiotactic polystyrene/polyethylene terephthalate/glass fiber (SPS/PET/GF) composite material, syndiotactic polystyrene/poly 2,6 dimethyl-1, 4-phenylene ether/glass fiber (SPS/PPO/GF) composite material, syndiotactic polystyrene/polyphenylene sulfide/glass fiber (SPS/PPS/GF) composite material, and syndiotactic polystyrene/liquid crystal polymer/glass fiber (SPS/LCP/GF) composite material.
As can be seen from the above description, the base material of the present technical solution can be selected from Syndiotactic Polystyrene (SPS), Liquid Crystal Polymer (LCP), syndiotactic polystyrene/glass fiber (SPS/GF) composite material, liquid crystal polymer/glass fiber (LCP/GF) composite material, syndiotactic polystyrene/polyethylene terephthalate/glass fiber (SPS/PET/GF) composite material, syndiotactic polystyrene/poly 2,6 dimethyl-1, 4-phenylene ether/glass fiber (SPS/PPO/GF) composite material, syndiotactic polystyrene/polyphenylene sulfide/glass fiber (SPS/PPS/GF) composite material or syndiotactic polystyrene/liquid crystal polymer/glass fiber (SPS/LCP/GF) composite material with smaller density, etc, The material with better dielectric property under high frequency enables the quality of the antenna oscillator to be lighter, improves the performance of the antenna oscillator and is beneficial to the light weight of the base station.
Further, in step S2, the thickness of the nickel layer is 30-100nm, and the thickness of the copper layer is 50-200 nm.
Further, step S2 is followed by step S21 of testing the bonding strength of the metal layer formed by a Physical Vapor Deposition (PVD) process.
From the above description, it can be known that whether the adhesion force of the metal layer formed on the base material by the Physical Vapor Deposition (PVD) process to the base material meets the standard or not is judged through the one-hundred-grid test, so as to ensure that the metal layer is stably adhered to the base material and the stable operation of the antenna oscillator is ensured.
Further, in step S3, the power of the infrared or Ultraviolet (UV) laser is 2-30W, the frequency of the laser is 20-60kHz, and the speed of the laser is 500-5000 mm/S.
From the above description, the functional circuit of the antenna oscillator is formed by laser-etching the metal layer on the surface of the substrate by the infrared or Ultraviolet (UV) laser, and the parameters of the infrared or Ultraviolet (UV) laser are set in a proper range, so that the functional circuit processed by the infrared or Ultraviolet (UV) laser is complete and clear.
Further, in step S4, the thickness of the copper layer after thickening is 8-25 μm.
As can be seen from the above description, the conductive performance of the metal layer of the antenna element is enhanced by increasing the thickness of the copper layer by electroplating copper.
Further, in step S5, the chemical solvent is a compound solvent including sulfuric acid, sodium persulfate, and hydrogen peroxide.
As can be seen from the above description, the compound solvent is configured to etch the nickel layer except for the functional circuit, and the excess nickel layer is removed from the substrate to ensure the normal use of the functional circuit.
Further, in step S6, the tin layer has a thickness of 8 to 25 μm.
According to the description, the tin layer is electroplated on the surface of the thickened copper layer, so that the copper layer is prevented from being oxidized, the deformation or color change of the functional circuit during welding is avoided, the function of protecting the functional circuit is achieved, and the external interference resistance of the antenna oscillator is enhanced.
Further, step S7 is included after step S6, the hundred-grid bonding force of the metal layer after tin electroplating is tested, and the metal layer after tin electroplating is subjected to a high temperature environment test.
According to the description, after the substrate is subjected to electrotinning, a hundred-grid test is required again, whether the metal layer foams or is layered or not is tested in a high-temperature environment, the metal layer after the electrotinning is tightly connected with the substrate, and the quality of the finished product of the antenna oscillator is ensured.
An antenna oscillator is obtained by the antenna oscillator preparation method.
As can be seen from the above description, the beneficial effects of the present invention are: the antenna oscillator obtained by the antenna oscillator preparation method avoids increase of surface roughness of the base material caused by sand blasting, improves stability of signal transmission of the antenna oscillator, and meanwhile, adopts the base material with lower density and better dielectric property, improves performance of the antenna oscillator, so that the finished antenna oscillator is lighter in weight and beneficial to light weight of a base station.
Example one
The first embodiment of the invention is as follows: a preparation method of an antenna oscillator and the antenna oscillator are provided, wherein the preparation method of the antenna oscillator comprises the following steps: s1, obtaining a base material of the antenna oscillator; s2, forming a metal layer on the surface of the base material through a Physical Vapor Deposition (PVD) process, wherein the metal layer can be a nickel layer/copper layer or a nickel layer/copper layer/nickel layer which are arranged from inside to outside; s3, processing a functional circuit on the metal layer by using an infrared or Ultraviolet (UV) laser; s4, thickening the copper layer of the functional circuit through electroplating; s5, removing the nickel layer outside the functional circuit by using a chemical solvent; and S6, forming a tin layer on the copper layer through electroplating.
In this embodiment, the material of the substrate in step S1 is Syndiotactic Polystyrene (SPS), the substrate is prepared by melting plastic particles and injection molding through a high temperature injection molding machine, wherein the injection molding temperature is 230- 2The mold temperature of the injection molding machine is 110-.
In step S2, the Physical Vapor Deposition (PVD) process includes steps of ultrasonic cleaning, pre-drying treatment, plasma activation, nickel sputtering, copper sputtering, and the like. Firstly, carrying out ultrasonic cleaning on the base material, wherein the ultrasonic cleaning temperature is 45 ℃, the cleaning time is 15min, drying the base material after the ultrasonic cleaning is finished, wherein the drying temperature is 100 ℃, the drying time is 0.5h, and drying the base materialAnd then carrying out plasma activation on the substrate, wherein the voltage of the plasma activation is 5KV, the substrate is placed in a PVD (physical vapor deposition) chamber when a metal layer is sputtered, the PVD chamber is kept at 100 ℃, vacuumizing is firstly carried out, then argon is introduced into the PVD chamber, and the argon is introduced into the PVD chamber to protect the substrate in the sputtering process, wherein the vacuum degree in the PVD chamber is 3.0 multiplied by 10-3And PA, wherein the argon flow in the PVD chamber is 100sccm when the nickel layer is sputtered, and the argon flow is 300sccm when the copper layer is sputtered. In this example, the thickness of the nickel layer is 50nm and the thickness of the copper layer is 100 nm.
Further, step S2 is followed by step S21 of testing the bonding strength of the metal layer formed by a Physical Vapor Deposition (PVD) process. Selecting any one of the base materials, cutting a 1 x 1mm grid pattern on the metal layer of the base material, penetrating the metal layer, performing a test by using a 3M600 adhesive tape according to a relevant test standard, and judging the bonding force between the metal layer and the base material according to the condition that the metal layer is peeled off from the base material.
In step S3, optionally, an Ultraviolet (UV) laser is used in this embodiment, the power of the Ultraviolet (UV) laser is 2-30W, the frequency of the laser is 20-60kHz, and the speed of the laser is 500-.
In step S4, the copper layer in the functional circuit is thickened to 8-25 μm by electroplating, so that the thickness of the copper layer is greatly increased to improve the conductivity of the antenna element metal layer.
In step S5, removing the portion of the metal layer other than the functional circuit by using a chemical solvent, and removing the redundant nickel layer, wherein the chemical solvent is a compound solvent including 40-80% of sulfuric acid, 10-30% of sodium persulfate and 10-30% of hydrogen peroxide.
In step S6, a tin layer is plated on the copper layer to achieve a protection effect, protect the copper layer from being oxidized, facilitate welding, and prevent the functional circuit from deforming or changing color during welding, thereby protecting the functional circuit and reducing damage to the functional circuit caused by external force. After the step S6 is completed, the metal layer includes the nickel layer, the copper layer, and the tin layer that are sequentially covered from inside to outside, and the total thickness of the metal layer is 16-50 μm, wherein the thickness of the nickel layer is less than 1 μm, the thickness of the copper layer is 8-25 μm, and the thickness of the tin layer is 8-25 μm.
And step S7 is further included after the step S6, the hundred-grid bonding force of the metal layer after tin electroplating is tested, and the metal layer after tin electroplating is subjected to high-temperature environment test. The method for testing the hundred-grid bonding force of the metal layer after tin electroplating in the step S7 is the same as the method for testing the hundred-grid bonding force of the metal layer in the step S21, and the method for testing the high-temperature environment comprises the steps of placing a sample of the base material in an environment of 120 ℃ for 15min, and observing whether the metal layer has bubbles and delamination phenomena. In the embodiment, the bonding force between the metal layer and the substrate can reach 4B, and high-temperature foaming and delamination phenomena are avoided.
The embodiment also provides an antenna oscillator obtained by the antenna oscillator preparation method, the antenna oscillator obtained by the antenna oscillator preparation method uses SPS as a base material, so that the antenna oscillator is lighter in weight and higher in performance, a Physical Vapor Deposition (PVD) process is adopted in the manufacturing process to replace a sand blasting and nickel dissolving process, the increase of the surface roughness of the base material caused by sand blasting is avoided, the transmission signal of the antenna oscillator is more stable, meanwhile, dust and noise generated by the sand blasting process and waste water generated by the nickel dissolving process are reduced, the production process of the antenna oscillator is environment-friendly, the resource waste is reduced, and the production cost is reduced.
Example two
The second embodiment of the present invention provides another technical solution for the material used for the base material on the basis of the first embodiment, which is different from the first embodiment only in the structure of the material used for the base material, and in the present embodiment, the base material is a syndiotactic polystyrene/polyethylene terephthalate/glass fiber (SPS/PET/GF) composite material, wherein 50 to 90 parts of SPS, 10 to 50 parts of PET, and 10 to 40 parts of GF are used.
Step S2, the temperature of ultrasonic cleaning is 75 ℃, the cleaning time is 45min, the substrate is dried after the ultrasonic cleaning is finished, the drying temperature is 150 ℃, the drying time is 2h, the substrate is subjected to plasma activation after being dried, the voltage of the plasma activation is 6KV, the substrate is placed in a PVD chamber when a metal layer is sputtered, the PVD chamber is kept at 150 ℃, vacuumizing is firstly carried out, then argon is introduced into the PVD chamber, and the argon is introduced into the PVD chamber to protect the substrate in the sputtering process, wherein the vacuum degree in the PVD chamber is 7.0 x 10-3PA, sputtering nickel layer and copper layer. In this embodiment, the thickness of the nickel layer is 100nm and the thickness of the copper layer is 200 nm.
In the embodiment, the bonding force between the metal layer and the substrate can reach 5B, and high-temperature foaming and delamination phenomena are avoided.
EXAMPLE III
The third embodiment of the present invention is another technical solution proposed for the material used for the base material on the basis of the first embodiment, and the difference from the first embodiment is only the structure of the material used for the base material, in the present embodiment, the material of the base material is a glass fiber reinforced syndiotactic polystyrene/glass fiber (SPS/GF) composite material.
In step S2, the temperature of ultrasonic cleaning is 60 ℃, the cleaning time is 30min, the substrate is dried after the ultrasonic cleaning is finished, wherein the drying temperature is 120 ℃, the drying time is 1h, the substrate is subjected to plasma activation after being dried, the voltage of the plasma activation is 5KV, the substrate is placed in a PVD chamber when a metal layer is sputtered, the PVD chamber is kept at 120 ℃, vacuumizing is firstly carried out, then argon is introduced into the PVD chamber, and the argon is introduced into the PVD chamber to protect the substrate in the sputtering process, wherein the vacuum degree in the PVD chamber is 5.0 x 10-3PA, sputtering nickel layer and copper layer. In this example, the nickel layer has a thickness of 80nm and the copper layer has a thickness of 150 nm.
In the embodiment, the bonding force between the metal layer and the substrate can reach 5B, and high-temperature foaming and delamination phenomena are avoided.
Example four
The fourth embodiment of the present invention is another technical solution proposed on the basis of the third embodiment, and the difference from the third embodiment is only the structure of the material used for the base material, in the present embodiment, the material of the base material is a syndiotactic polystyrene/poly-2, 6-dimethyl-1, 4-phenylene oxide/glass fiber (SPS/PPO/GF) composite material, wherein the SPS accounts for 50-90 parts, the PPO accounts for 10-50 parts, and the GF accounts for 10-40 parts.
The bonding force between the metal layer and the substrate in the embodiment can reach 5B, and high-temperature foaming and delamination phenomena are avoided.
EXAMPLE five
The fifth embodiment of the present invention is another technical solution proposed on the basis of the third embodiment, and the difference from the third embodiment is only the structure of the material used for the base material, in the present embodiment, the material of the base material is a syndiotactic polyester styrene/polyphenylene sulfide/glass fiber (SPS/PPS/GF) composite material, wherein the SPS accounts for 50-90 parts, the PPS accounts for 10-50 parts, and the GF accounts for 10-40 parts.
The bonding force between the metal layer and the substrate in the embodiment can reach 5B, and high-temperature foaming and delamination phenomena are avoided.
EXAMPLE six
The sixth embodiment of the present invention is another technical solution proposed on the basis of the third embodiment, and the difference from the third embodiment is only in the structure of the material used for the substrate, in the present embodiment, the material of the substrate is a syndiotactic polystyrene/liquid crystal polymer/glass fiber (SPS/LCP/GF) composite material, wherein the SPS accounts for 50-90 parts, the LCP accounts for 10-50 parts, and the GF accounts for 10-40 parts.
The bonding force between the metal layer and the substrate in the embodiment can reach 5B, and high-temperature foaming and delamination phenomena are avoided.
In conclusion, the antenna oscillator preparation method and the antenna oscillator provided by the invention improve the performance and the signal transmission stability of the antenna oscillator finished product, enable the quality of the antenna oscillator to be lighter, are beneficial to the lightweight of a base station, reduce dust, noise and sewage generated in the antenna oscillator preparation process, reduce the damage to production personnel and equipment, are environment-friendly, reduce the resource waste and reduce the production cost.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent modifications made by the present invention in the specification or directly or indirectly applied to the related technical field are included in the scope of the present invention.
Claims (10)
1. A preparation method of an antenna oscillator is characterized by comprising the following steps: comprises the following steps of (a) carrying out,
s1, obtaining a base material of the antenna oscillator;
s2, forming a metal layer on the surface of the base material through a Physical Vapor Deposition (PVD) process, wherein the metal layer can be a nickel layer/copper layer or a nickel layer/copper layer/nickel layer which are arranged from inside to outside;
S3, processing a functional circuit on the metal layer by using an infrared or Ultraviolet (UV) laser;
s4, thickening the copper layer of the functional circuit through electroplating;
s5, removing the nickel layer outside the functional circuit by using a chemical solvent;
and S6, forming a tin layer on the copper layer through electroplating.
2. The method of manufacturing an antenna element according to claim 1, wherein: in step S1, the base material is one or more of Syndiotactic Polystyrene (SPS), Liquid Crystal Polymer (LCP), syndiotactic polystyrene/glass fiber (SPS/GF) composite material, liquid crystal polymer/glass fiber (LCP/GF) composite material, syndiotactic polystyrene/polyethylene terephthalate/glass fiber (SPS/PET/GF) composite material, syndiotactic polystyrene/poly 2,6 dimethyl-1, 4-phenylene oxide/glass fiber (SPS/PPO/GF) composite material, syndiotactic polystyrene/polyphenylene sulfide/glass fiber (SPS/PPS/GF) composite material, and syndiotactic polystyrene/liquid crystal polymer/glass fiber (SPS/LCP/GF) composite material.
3. The method of manufacturing an antenna element according to claim 1, wherein: in step S2, the thickness of the nickel layer is 30-100nm, and the thickness of the copper layer is 50-200 nm.
4. The method of manufacturing an antenna element according to claim 1, wherein: step S21 is further included after step S2, testing the one hundred lattice bonding force of the metal layer formed by a Physical Vapor Deposition (PVD) process.
5. The method of manufacturing an antenna element according to claim 1, wherein: in step S3, the power of the infrared or Ultraviolet (UV) laser is 2-30W, the frequency of the laser is 20-60KHz, and the speed of the laser is 500-.
6. The method of manufacturing an antenna element according to claim 1, wherein: in step S4, the thickness of the thickened copper layer is 8-25 μm.
7. The method of manufacturing an antenna element according to claim 1, wherein: in step S5, the chemical solvent is a compound solvent including sulfuric acid, sodium persulfate, and hydrogen peroxide.
8. The method of manufacturing an antenna element according to claim 1, wherein: in step S6, the tin layer has a thickness of 8-25 μm.
9. The method of manufacturing an antenna element according to claim 1, wherein: and step S7 is further included after the step S6, the hundred-grid bonding force of the metal layer after tin electroplating is tested, and the metal layer after tin electroplating is subjected to high-temperature environment test.
10. An antenna element, characterized by: the antenna element is obtained by the antenna element preparation method according to any one of claims 1-9.
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