CN112779536A - Plastic metallization method and product - Google Patents
Plastic metallization method and product Download PDFInfo
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- CN112779536A CN112779536A CN202011609381.5A CN202011609381A CN112779536A CN 112779536 A CN112779536 A CN 112779536A CN 202011609381 A CN202011609381 A CN 202011609381A CN 112779536 A CN112779536 A CN 112779536A
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- 239000004033 plastic Substances 0.000 title claims abstract description 116
- 229920003023 plastic Polymers 0.000 title claims abstract description 116
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000001465 metallisation Methods 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 82
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 239000000696 magnetic material Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 36
- 239000002131 composite material Substances 0.000 claims description 32
- 239000002344 surface layer Substances 0.000 claims description 23
- 238000005240 physical vapour deposition Methods 0.000 claims description 21
- 229920010524 Syndiotactic polystyrene Polymers 0.000 claims description 17
- 239000002346 layers by function Substances 0.000 claims description 17
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 11
- 238000000678 plasma activation Methods 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 10
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 9
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 9
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 7
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 7
- GVLZQVREHWQBJN-UHFFFAOYSA-N 3,5-dimethyl-7-oxabicyclo[2.2.1]hepta-1,3,5-triene Chemical compound CC1=C(O2)C(C)=CC2=C1 GVLZQVREHWQBJN-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000004697 Polyetherimide Substances 0.000 claims description 4
- 229920001601 polyetherimide Polymers 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- -1 poly 2, 6-dimethyl-1, 4-phenylene Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 19
- 239000010949 copper Substances 0.000 description 18
- 239000002184 metal Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000001746 injection moulding Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
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- 230000000052 comparative effect Effects 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910003322 NiCu Inorganic materials 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/54—Electroplating of non-metallic surfaces
- C25D5/56—Electroplating of non-metallic surfaces of plastics
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
The invention discloses a plastic metallization method and a product, wherein a plastic base material is prepared; depositing a seed layer on the surface of the plastic base material; the seed layer is made of a non-magnetic material; the technical scheme of the invention adopts the nonmagnetic material as the bottom layer, is different from the existing plastic metallization process which adopts the magnetic material as the bottom layer, can be applied to passive devices such as antenna oscillators, filters and the like in the field of high-frequency communication, and improves the PIM value and the communication quality because the nonmagnetic material is not easy to interfere with the communication frequency band.
Description
Technical Field
The invention relates to the field of metallization of the surface of an insulating base material, in particular to a plastic metallization method and a plastic metallization product.
Background
In a communication system, when two or more microwave signals meet in a microwave Passive device, PIM (Passive Inter Modulation) distortion is generated, the microwave Passive device such as an antenna element, a cable, a filter and the like uses a magnetic material due to unreliable mechanical connection, contact surface is stained, and the like, so that signals with different frequencies are mixed nonlinearly at the connection of the devices to generate intermodulation products with different amplitudes, and the intermodulation distortion signals are represented as interference signals in a communication band, so that the signal-to-noise ratio of the system is reduced, and the capacity and the quality of the communication system are seriously affected. With the improvement of the integration level of microwave passive devices, the input power is increased, the frequency spectrum is used more closely, and the passive intermodulation problem is more and more emphasized by people.
At present, passive devices related to base station communication such as antenna oscillators, filters and the like have plastic solutions, the ratio of the plastic solutions is more and more in the future, and the plastic devices, instead of metal devices, need to be metallized on the surfaces of the plastic devices.
The existing metallization schemes of plastic devices such as plastic antenna oscillators, filters and the like include metallization schemes such as electroplating, chemical plating and the like. Taking the metallization scheme of the antenna oscillator as an example, in order to improve the direct bonding force between the metal and the substrate and facilitate the laser etching of the functional circuit, nickel metal is usually used as a metallization seed layer on the upper surface of the substrate. The plastic device blank is usually prepared by injection molding. However, the special engineering material is easy to generate fine flash on the surface or the hole wall of the plastic part in the injection molding process. If the tiny burrs are not completely removed, the tiny burrs risk falling off at any stage in the metallization process, once a metal layer at the burrs falls off or the metalized burrs and the like exist, the current is not uniform, and the PIM value is increased.
After the injection molding process is completed, although there are a manual deburring process and a sand blasting process, this cannot completely solve the problem, such as the burr in the hole exists, the manual work cannot completely remove the burr. This, in turn, can lead to flash on the surface of the substrate or within the holes that are subsequently plated. Meanwhile, the surface roughness of the base material is increased by the sand blasting process, the roughness of the metal layer at the bottom layer of the seed layer is increased by the increase of the surface roughness of the base material, the PIM value is increased by the rough metal layer bottom layer and the surface layer due to the transmission characteristic of an electric signal, and the sand blasting is not environment-friendly.
In addition, nickel metal is magnetic, and the presence of nickel layer also affects PIM value, and ultimately communication quality.
Under the measurement condition that the carrier frequency power is 43dBm, the PIM value of a product prepared by a metallization method in the prior art by adopting a magnetic material as a bottom layer is generally not lower than-92.16 dBm, and a plastic metallization scheme is required to be found in the industry to improve the passive intermodulation value of passive devices such as antenna oscillators, filters and the like in the field of high-frequency communication.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a method for metallizing plastic is provided to improve PIM value of passive devices such as antenna oscillator and filter.
In order to solve the technical problems, the invention adopts the technical scheme that:
a method of metallizing plastic comprising the steps of:
preparing a plastic base material;
depositing a seed layer on the surface of the plastic base material;
the seed layer is made of a non-magnetic material.
The invention has the beneficial effects that: the plastic metallization scheme provided by the invention adopts the nonmagnetic material as the bottom layer, is different from the existing plastic metallization process which adopts the magnetic material as the bottom layer, can be applied to passive devices such as antenna oscillators, filters and the like in the field of high-frequency communication, and improves the PIM value and the communication quality because the nonmagnetic material is not easy to interfere with the communication frequency band.
Drawings
FIG. 1 is a flow chart of the steps of a method of metallizing plastic according to the present invention;
FIG. 2 is a structural diagram of a metal layer on the surface of a plastic substrate according to an embodiment of the present invention.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1 to 2, an embodiment of the present invention provides a method for metalizing plastic, including the following steps:
preparing a plastic base material;
depositing a seed layer on the surface of the plastic base material;
the seed layer is made of a non-magnetic material.
From the above description, the beneficial effects of the present invention are: the plastic metallization scheme provided by the invention adopts the nonmagnetic material as the bottom layer, is different from the existing plastic metallization process which adopts the magnetic material as the bottom layer, can be applied to passive devices such as antenna oscillators, filters and the like in the field of high-frequency communication, and improves the PIM value and the communication quality because the nonmagnetic material is not easy to interfere with the communication frequency band.
Further, the depositing a seed layer on the surface of the plastic substrate includes:
depositing a seed layer bottom layer on the surface of the plastic base material;
and depositing a seed layer surface layer on the surface of the seed layer bottom layer far away from the plastic base material.
Further, the material of the seed layer bottom layer comprises one or more of Ti, Cr, Ni/Cr and Ni/Cu alloy.
Further, the material of the seed layer surface layer comprises Cu.
As can be seen from the above description, the above material is a non-magnetic material, and the non-magnetic material is used as a seed layer of the plastic substrate, which is different from the existing plastic metallization process that a magnetic material is used as a seed layer, and the non-magnetic material is not easy to interfere with an electrical signal, so as to improve the PIM value.
Further, the plastic substrate comprises one or more of polyetherimide-based composite materials, polyphenylene sulfide-based composite materials, poly 2, 6-dimethyl-1, 4-phenylene ether-based composite materials, syndiotactic polystyrene-based composite materials, liquid crystal polymers, liquid crystal polymer-based composite materials, syndiotactic polystyrene/polyethylene terephthalate-based composite materials, syndiotactic polystyrene/poly 2, 6-dimethyl-1, 4-phenylene ether-based composite materials, syndiotactic polystyrene/polyphenylene sulfide-based composite materials and syndiotactic polystyrene/liquid crystal polymer-based composite materials.
As can be seen from the above description, the plastic substrate is selected from the above materials, and by performing metallization on the surface of the substrate, passive devices such as an antenna oscillator and a filter can be made, so as to be applied to the field of high-frequency communication and provide more plastic solutions for passive devices related to base station communication.
Further, the method also comprises the step of pretreating the plastic substrate before depositing the seed layer on the surface of the plastic substrate;
the pre-treating the plastic substrate comprises:
removing burrs of the plastic base material;
carrying out ultrasonic cleaning on the plastic substrate subjected to deburring treatment, wherein the temperature of the ultrasonic cleaning is 45-60 ℃, and the time is 10-30 minutes;
drying the plastic base material subjected to ultrasonic cleaning at the temperature of 80-150 ℃ for 0.5-2 hours;
and carrying out plasma activation on the dried plastic base material in a chamber, wherein the temperature of the chamber is 80-150 ℃, and the voltage of the plasma activation is not less than 3 KV.
According to the description, the tiny flashes on the surface of the base material can be removed through deburring treatment, so that the phenomenon that the tiny flashes fall off during metallization to cause uneven current is avoided, and the PIM value is improved; the surface state of the base material can be improved by carrying out ultrasonic cleaning, drying and plasma activation treatment, and the binding force between the plastic base material and the metal layer is improved.
Further, the depositing a seed layer on the surface of the plastic substrate further includes:
placing the plastic base material activated by the plasma in a PVD chamber, and sputtering the surface of the plastic base material to form a seed layer bottom layer by adopting a physical vapor deposition metallization method, wherein the thickness of the seed layer bottom layer is 50-100 nm;
sputtering the surface of the bottom layer of the seed layer, which is far away from the plastic base material, to form a surface layer of the seed layer, wherein the thickness of the surface layer of the seed layer is 100-300 nm;
the vacuum degree of the PVD chamber is 0.15-0.2Pa, and the argon flow is 100-300 sccm.
From the above description, it can be known that the baige bonding force between the plastic substrate and the metal layer can reach 5B by adopting the physical vapor deposition metallization process and adaptively adjusting the PVD process parameters, and the product performance of the plastic product is ensured.
Further, forming a functional layer on the surface of the seed layer surface layer far away from the seed layer bottom layer in an electroplating mode;
the functional layer is made of Cu.
From the above description, it can be known that the seed layer is used as a non-magnetic priming material of the plastic substrate, and the functional layer is deposited on the basis of the seed layer to realize the conduction of the material, so that the plastic substrate has the metal conduction characteristic, and the plastic device can be applied to the communication field instead of a metal device.
From the above description, it can be known that, by depositing the functional layer on the surface of the seed layer by electroplating, the thickness of the functional layer can be large enough, so as to improve the conductivity of the metal layer of the plastic product, and improve the metallization efficiency compared with the PVD process.
Further, a protective layer is formed on the surface of the functional layer far away from the seed layer in an electroplating mode;
the material of the protective layer comprises any one of Ag, Au and Sn.
According to the description, the protective effect can be achieved by electroplating the protective layer on the surface of the functional layer, the metal layer is protected from being oxidized, welding is easy, deformation or color change of the functional circuit on the surface of the metal layer during welding is avoided, the functional circuit is protected, and damage to the functional circuit caused by external force is reduced.
Another embodiment of the present invention provides a plastic metalized article prepared according to the above plastic metalizing method.
The first embodiment is as follows:
a method of metallizing plastic comprising the steps of: preparing a plastic base material;
specifically, in the embodiment, a plastic substrate is prepared by adopting an injection molding mode, and a passive device blank is prepared from plastic particles by adopting a high-speed injection molding machine, wherein the injection molding and post-treatment processes are properly adjusted according to the material types;
the plastic base material is selected from one of polyetherimide composite material, polyphenylene sulfide composite material, poly 2, 6-dimethyl-1, 4-phenylene ether composite material, syndiotactic polystyrene composite material, liquid crystal polymer composite material, syndiotactic polystyrene/polyethylene glycol terephthalate composite material, syndiotactic polystyrene/poly 2, 6-dimethyl-1, 4-phenylene ether composite material, syndiotactic polystyrene/polyphenylene sulfide composite material and syndiotactic polystyrene/liquid crystal polymer composite material;
in this embodiment, the selected substrate material is a polyetherimide composite material;
depositing a seed layer on the surface of the plastic base material;
the seed layer is made of a non-magnetic material;
the step of depositing the seed layer on the surface of the plastic base material comprises the following steps:
depositing a seed layer bottom layer on the surface of the plastic base material;
depositing a seed layer surface layer on the surface of the seed layer bottom layer far away from the plastic base material;
the material of the seed layer bottom layer comprises one or more of Ti, Cr, Ni/Cr and Ni/Cu alloy.
The material of the seed layer surface layer comprises Cu;
in this embodiment, the bottom layer of the seed layer is made of Ti;
the method also comprises the steps of pretreating the plastic base material before depositing the seed layer on the surface of the plastic base material;
the pre-treatment of the plastic substrate comprises:
removing burrs of the plastic base material;
in this embodiment, the deburring process is a sublimation process of the plastic substrate to remove fine flashes on the surface and in the holes of the plastic substrate;
carrying out ultrasonic cleaning on the plastic substrate subjected to deburring treatment, wherein the temperature of the ultrasonic cleaning is 45-60 ℃, and the time is 10-30 minutes;
drying the plastic base material subjected to ultrasonic cleaning at the temperature of 80-150 ℃ for 0.5-2 hours;
carrying out plasma activation on the dried plastic base material in a chamber, wherein the temperature of the chamber is 80-150 ℃, and the voltage of the plasma activation is not less than 3 KV;
in this embodiment, the above parameters are set as: the ultrasonic cleaning temperature is 45 ℃, and the cleaning time is 10 minutes; the drying temperature is 100 ℃, and the drying time is 0.5 hour; the plasma activation voltage is 3KV, and the temperature of the chamber is 100 ℃;
placing the plastic base material activated by the plasma in a PVD chamber, and sputtering the surface of the plastic base material to form a seed layer bottom layer by adopting a physical vapor deposition metallization method, wherein the thickness of the seed layer bottom layer is 50-100 nm;
sputtering the surface of the bottom layer of the seed layer, which is far away from the plastic base material, to form a surface layer of the seed layer, wherein the thickness of the surface layer of the seed layer is 100-300 nm;
the vacuum degree of the PVD chamber is 0.15-0.2Pa, and the argon flow is 100-300 sccm;
specifically, the vacuum degree of the PVD chamber in this embodiment is 0.15 Pa; the thickness of the bottom layer material Ti of the seed layer is 50nm, and the thickness of the surface layer material Cu of the seed layer is 100 nm;
in another optional embodiment, the next step after the PVD process is laser etching, specifically, an infrared or Ultraviolet (UV) laser etching machine is used to process a clear and complete functional circuit on the substrate, so as to ensure that the functional circuit is disconnected from the non-functional region;
forming a functional layer on the surface of the seed layer surface layer far away from the seed layer bottom layer in an electroplating mode;
the functional layer is made of Cu;
in the embodiment, the copper layer in the functional circuit is thickened to 5-25 mu m by electroplating, so that the thickness of the copper layer is greatly increased to improve the conductivity of the metal layer on the surface of the plastic substrate;
in another optional embodiment, etching is accompanied in the process of forming the electroplating functional layer, specifically, a plating solution solvent is used to remove the part of the metal layer except the functional circuit, wherein the plating solution solvent is a compound solvent comprising sulfuric acid, sodium persulfate and hydrogen peroxide;
forming a protective layer on the surface of the functional layer far away from the seed layer in an electroplating mode;
the material of the protective layer comprises any one of Ag, Au and Sn;
the material that the inoxidizing coating chooseed for use in this embodiment is Ag, through plating one deck Ag layer on the copper layer, reaches the effect of protection, the protection the copper layer is not by the oxidation, easily welds, avoids when welding simultaneously function circuit warp or discolour, protects function circuit reduces external force and is right the damage that function circuit caused.
Example two:
the present embodiment is different from the first embodiment in that:
the base material is a polyphenylene sulfide-based composite material;
the deflashing treatment process before metallization comprises sand blasting pretreatment, wherein 80-100 mesh river sand is preferred;
the bottom layer material of the seed layer is Cr; the surface layer material of the seed layer is Cu; the functional layer material is Cu; the protective layer is made of Au;
in this embodiment, the process parameters of the plastic substrate pretreatment and the physical vapor deposition metallization process are specifically set as follows: the ultrasonic cleaning temperature is 60 ℃, and the cleaning time is 30 minutes; the drying temperature is 150 ℃, and the drying time is 1 hour; the plasma activation voltage is 5KV, and the temperature of the chamber is 150 ℃; the vacuum degree of the PVD chamber is 0.2 Pa; the thickness of the bottom layer Cr of the seed layer is 80nm, and the thickness of the surface layer Cu of the seed layer is 150 nm.
Example three:
the present embodiment is different from the first embodiment in that:
the base material is poly 2, 6-dimethyl-1, 4-phenyl ether composite material;
the deflashing treatment process before metallization comprises sublimation and Plasma pretreatment;
the bottom layer of the seed layer is made of NiCr alloy, and the surface layer of the seed layer is made of Cu; the functional layer material is Cu; the protective layer is made of Sn;
in this embodiment, the process parameters for the plastic substrate pretreatment and the physical vapor deposition metallization are specifically set as follows: the ultrasonic cleaning temperature is 50 ℃, and the cleaning time is 45 minutes; the drying temperature is 120 ℃, and the drying time is 2 hours; the plasma activation voltage is 6KV, and the temperature of the chamber is 120 ℃; the vacuum degree of the PVD chamber is 0.19 Pa; the thickness of the NiCr layer at the bottom layer of the seed layer is 100nm, and the thickness of the Cu layer at the surface layer of the seed layer is 200 nm.
Example four:
the present embodiment is different from the second embodiment in that:
the base material is a syndiotactic polystyrene-based composite material;
the deflashing treatment process before metallization comprises sublimation and Plasma pretreatment;
the bottom layer of the seed layer is made of NiCu alloy, and the surface layer of the seed layer is made of Cu; the functional layer material is Cu; the protective layer is made of Sn;
in this embodiment, the process parameters for the plastic substrate pretreatment and the physical vapor deposition metallization are specifically set as follows: the ultrasonic cleaning temperature is 60 ℃, and the cleaning time is 30 minutes; the drying temperature is 120 ℃, and the drying time is 2 hours; the plasma activation voltage is 6KV, and the temperature of the chamber is 120 ℃; the vacuum degree of the PVD chamber is 0.18 Pa; the thickness of the NiCu layer at the bottom layer of the seed layer is 100nm, and the thickness of the Cu layer at the surface layer of the seed layer is 300 nm.
Example five:
the present embodiment is different from the second embodiment in that:
the substrate is a liquid crystal polymer material.
Example six:
the present embodiment is different from the second embodiment in that:
the base material is syndiotactic polystyrene/polyethylene glycol terephthalate based composite material.
The performance of the products prepared by the plastic metallization method described in the first to sixth embodiments was tested, and the test results are shown in table 1:
TABLE 1 Performance test results for plastic metallized articles
| Examples | PIM(43dBm) | Binding force of hundred grids | Presence or absence of high temperature blistering or delamination |
| Example one | -94.29 | 5B | Is free of |
| Example two | -95.54 | 5B | Is free of |
| EXAMPLE III | -93.24 | 5B | Is free of |
| Example four | -100.11 | 5B | Is free of |
| EXAMPLE five | -96.21 | 5B | Is free of |
| EXAMPLE six | -95.92 | 5B | Is free of |
| Comparative example | -92.16 | 5B | Is free of |
According to the table, the product prepared by the plastic metallization method in the first embodiment to the sixth embodiment has a Baige binding force of 5B, has no high-temperature foaming or layering phenomenon, and meets the performance requirements of the plastic metallization product; the comparative examples in the table above are products prepared by a metallization method using a magnetic material as a bottom layer in the prior art, and under the measurement condition that the carrier power is 43dBm, the PIM values of the metallized products in the first to sixth examples are all smaller than the PIM value of the comparative examples, so that the PIM values of the products prepared by the plastic metallization method of the present invention are more excellent.
Example seven:
a plastic metalized product, in particular to an antenna oscillator, which is prepared by any one of the plastic metalizing methods in the first embodiment to the sixth embodiment; compared with a passive device in the prior art, the passive device is lighter in weight, better in dimensional stability and more excellent in PIM value.
In summary, the plastic metallization scheme provided by the invention adopts the nonmagnetic material as the bottom layer, is different from the existing plastic metallization process that adopts the magnetic material as the bottom layer, selects the plastic base material within the specific material type range, adopts the PVD metallization mode, sets the parameters within the specific numerical value range in the specific process, and the plastic product prepared by the metallization scheme can be applied to passive devices such as antenna oscillators, filters and the like in the field of high-frequency communication.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (10)
1. A method of metallizing plastic comprising the steps of:
preparing a plastic base material;
depositing a seed layer on the surface of the plastic base material;
the seed layer is made of a non-magnetic material.
2. The method of claim 1, wherein the depositing a seed layer on the surface of the plastic substrate comprises:
depositing a seed layer bottom layer on the surface of the plastic base material;
and depositing a seed layer surface layer on the surface of the seed layer bottom layer far away from the plastic base material.
3. A plastic metallization method according to claim 2, wherein the material of the seed layer underlayer comprises one or more of Ti, Cr, Ni/Cr and Ni/Cu alloys.
4. The method of claim 2, wherein the material of the surface layer of the seed layer comprises Cu.
5. The method of claim 1, wherein the plastic substrate comprises one or more of polyetherimide-based composites, polyphenylene sulfide-based composites, poly 2, 6-dimethyl-1, 4-phenylene ether-based composites, syndiotactic polystyrene-based composites, liquid crystal polymers, liquid crystal polymer-based composites, syndiotactic polystyrene/polyethylene terephthalate-based composites, syndiotactic polystyrene/poly 2, 6-dimethyl-1, 4-phenylene ether-based composites, syndiotactic polystyrene/polyphenylene sulfide-based composites, and syndiotactic polystyrene/liquid crystal polymer-based composites.
6. The method of claim 2, further comprising pre-treating the plastic substrate before depositing a seed layer primer layer on the surface of the plastic substrate;
the pre-treating the plastic substrate comprises:
removing burrs of the plastic base material;
carrying out ultrasonic cleaning on the plastic substrate subjected to deburring treatment, wherein the temperature of the ultrasonic cleaning is 45-60 ℃, and the time is 10-30 minutes;
drying the plastic base material subjected to ultrasonic cleaning at the temperature of 80-150 ℃ for 0.5-2 hours;
and carrying out plasma activation on the dried plastic base material in a chamber, wherein the temperature of the chamber is 80-150 ℃, and the voltage of the plasma activation is not less than 3 KV.
7. The method of claim 6, wherein the depositing a seed layer on the surface of the plastic substrate further comprises:
placing the plastic base material activated by the plasma in a PVD chamber, and sputtering the surface of the plastic base material to form a seed layer bottom layer by adopting a physical vapor deposition metallization method, wherein the thickness of the seed layer bottom layer is 50-100 nm;
sputtering the surface of the bottom layer of the seed layer, which is far away from the plastic base material, to form a surface layer of the seed layer, wherein the thickness of the surface layer of the seed layer is 100-300 nm;
the vacuum degree of the PVD chamber is 0.15-0.2Pa, and the argon flow is 100-300 sccm.
8. The plastic metallization method of claim 2, wherein a functional layer is formed on the surface of the seed layer surface layer away from the seed layer bottom layer by electroplating;
the functional layer is made of Cu.
9. The method of claim 2, wherein a protective layer is formed on the surface of the functional layer away from the seed layer by electroplating;
the material of the protective layer comprises any one of Ag, Au and Sn.
10. A plastic metalized article, characterized in that it is prepared according to the plastic metalizing method of any one of claims 1 to 9.
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