CN111830791B - Stage device, lithographic apparatus, and article manufacturing method - Google Patents

Stage device, lithographic apparatus, and article manufacturing method Download PDF

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Publication number
CN111830791B
CN111830791B CN202010288042.5A CN202010288042A CN111830791B CN 111830791 B CN111830791 B CN 111830791B CN 202010288042 A CN202010288042 A CN 202010288042A CN 111830791 B CN111830791 B CN 111830791B
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gas
optical path
supply unit
unit
supply
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CN111830791A (en
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塙理一郎
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Optical Integrated Circuits (AREA)
  • Weting (AREA)

Abstract

The invention provides a stage device, a lithographic apparatus and an article manufacturing method, which are techniques for facilitating high-precision measurement of stage positions. The table device includes: a table movable; a measuring unit that irradiates the table with light to measure a position of the table; a supply unit configured to supply a gas to an optical path of the light so as to form a gas flow of the gas along the optical path; and a control unit that controls the supply unit so as to change a flow rate of the gas supplied from the supply unit to the optical path in accordance with a position of the table in the direction.

Description

Stage device, lithographic apparatus, and article manufacturing method
Technical Field
The invention relates to a stage device, a lithographic apparatus and a method for manufacturing an article.
Background
A lithographic apparatus used for manufacturing a semiconductor device, a liquid crystal panel, or the like is provided with a stage device having a stage capable of moving while holding a substrate, a master, or the like. In recent years, with miniaturization of circuit patterns, a stage device is required to have an improved positioning accuracy, and in order to meet such a requirement, it is required to measure the position of the stage with high accuracy.
In general, a laser interferometer is used for measuring the position of a stage, and a change in refractive index in a measurement optical path due to fluctuation in temperature, pressure, humidity, or the like of a gas on a measurement optical path (sometimes referred to as "fluctuation of gas") may cause a measurement error in the laser interferometer. The following apparatus is proposed in patent document 1: by flowing the gas along the optical path of the light (laser beam) emitted from the laser interferometer, the change in refractive index on the optical path is reduced.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2011-133398
Disclosure of Invention
Problems to be solved by the invention
In a system in which gas is caused to flow along the optical path of light emitted from the laser interferometer, the gas blown out in the direction toward the stage collides with the stage, and there is a case where the gas flow changes around the stage, and the fluctuation of the gas occurs. The fluctuation of the gas generated around the table becomes more remarkable as the distance between the gas outlet and the table becomes closer, and it becomes difficult to measure the position of the table with high accuracy.
It is therefore an object of the present invention to provide techniques that facilitate high precision measurement of stage position.
Means for solving the problems
In order to achieve the above object, a table device according to an aspect of the present invention includes: a table movable; a measuring unit that irradiates the table with light to measure a position of the table; a supply unit that supplies a gas to an optical path of the light so as to form a gas flow of the gas in a direction along the optical path; and a control unit that controls the supply unit so as to change a flow rate of the gas supplied from the supply unit to the optical path in accordance with a position of the table in the direction.
In order to achieve the above object, according to an aspect of the present invention, there is provided a lithographic apparatus for forming a pattern on a substrate, the lithographic apparatus including a stage apparatus having a stage capable of holding the substrate and moving, the stage apparatus including: a table movable; a measuring unit that irradiates the table with light to measure a position of the table; a supply unit that supplies a gas to an optical path of the light so as to form a gas flow of the gas in a direction along the optical path; and a control unit that controls the supply unit so as to change a flow rate of the gas supplied from the supply unit to the optical path in accordance with a position of the table in the direction.
In order to achieve the above object, according to one aspect of the present invention, there is provided a method for manufacturing an article from a substrate, the method including a forming step of forming a pattern on the substrate using a photolithography apparatus, and a processing step of processing the substrate on which the pattern is formed in the forming step, the photolithography apparatus including a stage apparatus having a stage capable of holding and moving the substrate, the stage apparatus including: a table movable; a measuring unit that irradiates the table with light to measure a position of the table; a supply unit that supplies a gas to an optical path of the light so as to form a gas flow of the gas in a direction along the optical path; and a control unit that controls the supply unit so as to change a flow rate of the gas supplied from the supply unit to the optical path in accordance with a position of the table in the direction.
Other objects and other aspects of the present invention will become apparent from the following description of the preferred embodiments with reference to the accompanying drawings.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, for example, a technique that facilitates high-precision measurement of the position of a table can be provided.
Drawings
Fig. 1 is an overall schematic view of an exposure apparatus.
Fig. 2 is a diagram showing an example of the configuration of the table device according to embodiment 1.
Fig. 3 is a diagram showing a configuration example of the blowout part of the 1 st supply part.
Fig. 4 is a diagram showing an example of control of the 1 st supply unit according to the position of the substrate table in embodiment 1.
Fig. 5 is a diagram showing an example of arrangement of the 1 st supply unit and the 2 nd supply unit.
Fig. 6 is a diagram showing a configuration of the table device according to embodiment 2.
Fig. 7 is a diagram showing an example of control of the 1 st supply unit according to the position of the substrate table in embodiment 2.
Fig. 8 is a diagram showing a modification of the blowout part of the 1 st supply part.
Detailed Description
Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The following embodiments do not limit the invention according to the claims. Although the embodiment has been described with reference to a plurality of features, not all of the features are essential to the invention, and a plurality of features may be combined at will. In the drawings, the same or corresponding components are denoted by the same reference numerals, and redundant description thereof is omitted.
In the following embodiments, an example in which the stage device according to the present invention is applied to an exposure apparatus for exposing a substrate will be described, but the present invention is not limited thereto. For example, the stage device according to the present invention can be applied to other lithographic apparatus such as a forming apparatus (imprinting apparatus, planarization apparatus) for forming a composition on a substrate by using a mold, or a patterning apparatus for forming a pattern on a substrate by using charged particle beams. In the following, directions orthogonal to each other in a plane parallel to the surface of the substrate are referred to as X-direction and Y-direction, and a direction perpendicular to the surface of the substrate is referred to as Z-direction.
Embodiment 1
An exposure apparatus 100 according to embodiment 1 of the present invention will be described. Fig. 1 is a schematic overall view of an exposure apparatus 100 according to embodiment 1. The exposure apparatus 100 of the present embodiment is an apparatus for transferring a pattern of a mask M (original plate) to a large-sized substrate W such as a glass substrate for a liquid crystal panel, and includes: an exposure section 10 (main body section) for performing an exposure process of the substrate W, a chamber 30 for accommodating the exposure section 10, and a control section CNT. The control unit CNT is constituted by a computer including a CPU, a memory, and the like, for example, and controls each part of the exposure apparatus 100.
First, the configuration of the exposure unit 10 will be described. The exposure section 10 may include, for example, an illumination optical system 11, a projection optical system 12, a mask stage 13, a substrate stage 14, an observation optical system 15, and a measurement section 20.
The illumination optical system 11 is an optical system that illuminates the mask M with light from a light source 11a such as a mercury lamp, and includes various optical elements such as a lens, a mirror, and an optical integrator. The projection optical system 12 is an optical system that projects an image of the pattern of the mask M illuminated by the illumination optical system 11 onto the substrate W. In the present embodiment, the projection optical system 12 is configured as a mirror projection type equivalent imaging optical system including a plane mirror, a concave mirror, a convex mirror, and the like, but the present invention is not limited thereto, and other types of optical systems such as an enlarged imaging optical system and a reduced imaging optical system may be applied.
The mask stage 13 includes a mask jig 13a and a mask driving mechanism 13b, and is configured to hold the mask M and to be movable in the XY directions. The mask jig 13a holds the mask M by a vacuum jig, an electrostatic jig, or the like. The mask driving mechanism 13b may be configured to support the mask jig 13a and to be movable in the XY directions. The substrate stage 14 includes a substrate holder 14a and a substrate driving mechanism 14b, and is configured to hold and move the substrate W. The substrate holder 14a holds the substrate W by a vacuum chuck, an electrostatic chuck, or the like. The substrate driving mechanism 14b supports the substrate holder 14a and is configured to be movable in the XY directions above the platen 16.
The observation optical system 15 is an optical system disposed above the mask stage 13 for observing the substrate W through the mask M and the projection optical system 12. In the present embodiment, the observation optical system 15 may include, for example, an alignment detection system (alignment viewer) that detects marks formed on the mask M and the substrate W, respectively, for alignment of the mask M and the substrate W.
The measuring unit 20 is constituted by, for example, a laser interferometer, irradiates the mask stage 13 and the substrate stage 14 with measuring light (laser light), and measures the positions of the stages in real time. In the case of the present embodiment, the measuring section 20 may include, for example, a laser head 21, a beam splitter 22, and cylindrical mirrors 23, 24. The cylindrical mirror 23 is mounted on the mask stage 13, and the cylindrical mirror 24 is mounted on the substrate stage 14. The measurement light ML (laser light) emitted from the laser head 21 is branched by the beam splitter 22, and a part of the measurement light ML is reflected by the mirror 25 and is incident on the cylindrical mirror 23 of the mask stage 13, and the remaining measurement light ML is incident on the cylindrical mirror 24 of the substrate stage 14. The measurement light ML reflected by the cylindrical mirror 23 of the mask stage 13 and the measurement light ML reflected by the cylindrical mirror 24 of the substrate stage 14 interfere with each other by passing through the spectroscope 22 again. Thus, the measuring section 20 (laser head 21) can measure the relative positions of the mask stage 13 (mask M) and the substrate stage 14 (substrate W) based on the interference pattern.
In the exposure apparatus 100, the mask M held by the mask stage 13 and the substrate W held by the substrate stage 14 are disposed at positions (object plane and image plane of the projection optical system 12) optically conjugate with each other via the projection optical system 12. The control unit CNT can relatively synchronize the scanning of the mask stage 13 and the substrate stage 14 at a speed ratio corresponding to the projection magnification of the projection optical system 12 based on the measurement result of the measurement unit 20, thereby transferring the pattern of the mask M onto the substrate.
Next, the configuration of the chamber 30 accommodating the exposure unit 10 will be described. The chamber 30 may be configured as an air conditioning mechanism for adjusting the temperature of the environment (space) in which the exposure unit 10 is disposed. For example, the chamber 30 may include a thermostat 31 that adjusts the temperature of gas (air), a filter box 32 that filters minute foreign matters to form a uniform flow of clean air, and a compartment 33 for shielding the environment in which the exposure portion 10 is disposed from the outside.
The temperature controller 31 includes, for example, a chemical filter 31a for removing organic or inorganic substances, a heater 31b, a blower 31c, and a temperature control unit 31d. The temperature control unit 31d controls the heater 31b so that the inside of the compartment 33 becomes a predetermined temperature, and controls the blower 31c so that the gas is supplied from the filtration tank 32 at a predetermined flow rate. The filter box 32 is provided above and laterally of the exposure unit 10, and supplies gas into the compartment 33 by a down flow and a side flow. By supplying the gas into the compartment 33 in this way, it is possible to reduce the influence of the supply of the gas into the compartment 33 on the measurement of the positions of the mask stage 13 and the substrate stage 14 by the measurement section 20 of the exposure section 10.
In the present embodiment, the chamber 30 is a circulation air conditioning unit that circulates temperature-adjusted and flow-adjusted gas in the compartment 33 in which the exposure unit 10 is housed. Specifically, the gas passing through the chemical filter 31a is temperature-adjusted by the heater 31b, then flow-adjusted by the blower 31c, and supplied from the filter box 32 into the compartment 33. The gas supplied into the compartment 33 is again taken into the thermostat 31 from the intake port 34 and circulated. Here, in the chamber 30, the inside of the compartment 33 is kept at a positive pressure with respect to the outside to prevent intrusion of minute foreign matters into the compartment 33, and for this purpose, approximately one gas of the circulating air amount is introduced from the outside air introduction port 35.
The chamber 30 includes an interface opening 36 for transferring the substrate W from the outside of the exposure apparatus 100, and a shutter 37 provided in the interface opening 36. The shutter 37 controls opening and closing operations based on, for example, a substrate transfer signal from a robot that carries in and out the substrate W from the outside of the opposing chamber 30.
[ constitution of the 1 st supply portion and the 2 nd supply portion ]
In the exposure apparatus 100, with the recent miniaturization of circuit patterns, it is required to improve positioning accuracy of the mask stage 13 and the substrate stage 14, and in order to achieve this, it is necessary to measure the positions of these stages with high accuracy by the measuring section 20. However, in the laser interferometer constituting the measurement unit 20, a change in refractive index in the measurement optical path due to fluctuation in temperature, pressure, humidity, or the like of the gas in the measurement optical path (sometimes referred to as "fluctuation of the gas") may cause measurement errors. For example, the measurement unit 20 for measuring the positions of the mask stage 13 and the substrate stage 14 requires a measurement accuracy (measurement error) of 30nm or less, and in order to achieve this measurement accuracy, it is necessary to set the temperature change rate of the measurement optical path to 1ppm/°c or less.
In addition, in recent years, the substrate W for a liquid crystal panel has been enlarged, and as a result, the substrate stage 14 has been enlarged in the exposure apparatus 100, and the movement stroke of the substrate stage 14 has been increased. Thus, the measurement optical path length of the measurement section 20 also becomes long, for example, up to about 3000mm. In this case, in order to achieve measurement accuracy of 30nm or less, it is necessary to suppress the temperature change of the measurement light path to 0.01 ℃ or less.
Accordingly, in the exposure apparatus 100 of the present embodiment, the 1 st supply unit 40 and the 2 nd supply unit 50 for supplying the gas whose flow rate and temperature are adjusted are provided for the optical path (measurement optical path) of the measurement light ML emitted from the measurement unit 20 (laser head 21). The 1 st supply unit 40 and the 2 nd supply unit 50 supply, for example, a gas whose temperature is adjusted by the temperature regulator 31. Specifically, as shown in fig. 1, the temperature controller 31 is provided with an inlet 38 for taking in compressed gas from a plant and an outlet 39 for discharging the gas after temperature control. The compressed gas taken into the temperature regulator 31 from the intake port 38 passes through the chemical filter 31a, is temperature-regulated by the heater 31b, and is then sent out from the outlet 39. The delivery port 39 communicates with the 1 st supply portion 40 and the 2 nd supply portion 50, and the compressed gas delivered from the delivery port 39 is supplied to the 1 st supply portion 40 and the 2 nd supply portion 50. The compressed gas supplied from the plant to the inlet 38 of the temperature controller 31 may have a gas pressure (air pressure) of about 0.1MPa to 0.8 MPa.
Next, a description will be given of a configuration of a stage device to which the exposure apparatus 100 of the present embodiment is applied. The stage device may be defined as a configuration including the measurement unit 20, the 1 st supply unit 40, and the control unit CNT, for example, but may be defined as a configuration including the 2 nd supply unit 50 in addition to this. Fig. 2 is a diagram showing a configuration of the stage device, and shows an example in which the 1 st supply unit 40 and the 2 nd supply unit 50 are provided for a measurement optical path of the measurement unit 20 (laser head 21) for measuring the position of the substrate stage 14. Hereinafter, an example will be described in which the 1 st supply unit 40 and the 2 nd supply unit 50 are provided for a measurement optical path (an optical path between the laser head 21 and the cylindrical mirror 24) for measuring the position of the substrate table 14, but the present invention is not limited thereto. For example, as shown in fig. 1, the 1 st supply unit 40 and the 2 nd supply unit 50 may be provided similarly to a measurement optical path (an optical path between the beam splitter 22 and the cylindrical mirror 23) for measuring the position of the mask stage 13.
The 1 st supply unit 40 may include, for example, a flow rate adjustment unit 41 (an electric valve), a temperature adjustment unit 42, and a blowout unit 43, and supplies gas to the measurement light path so as to form a gas flow in the 1 st direction (optical axis direction, for example, -X direction) along the light path of the measurement light ML from the measurement unit 20 in the measurement light path. The flow rate adjusting unit 41 includes, for example, a mass flow controller, and adjusts the flow rate of the compressed gas supplied from the outlet 39 of the temperature regulator 31 of the chamber 30 through the pipe 46a under the control of the control unit CNT. The temperature adjusting unit 42 may include, for example, a heater, a cooling mechanism, or the like, and adjusts the temperature of the gas supplied from the flow rate adjusting unit 41 via the pipe 46b under the control of the control unit CNT. In the example shown in fig. 2, the temperature adjustment unit 42 is disposed on the downstream side of the flow rate adjustment unit 41, but the present invention is not limited to this, and the flow rate adjustment unit 41 may be disposed on the downstream side of the temperature adjustment unit 42. The flow rate adjusting unit 41 and the temperature adjusting unit 42 are preferably provided near the blowout unit 43, but may be provided at any position, for example, inside the temperature regulator 31.
The blowout part 43 blows out the gas supplied from the temperature adjustment part 42 via the pipe 46c to the measurement optical path so that the flow of the gas in the 1 st direction along the measurement optical path is formed in the measurement optical path by using the coanda effect. Specifically, the blowout part 43 may include a blowout port 44 and a guide member 45 as shown in fig. 3. The gas outlet 44 communicates with the temperature adjusting unit 42, and blows out the gas (indicated by an arrow α) supplied from the temperature adjusting unit 42 via the pipe 46c in a direction (for example, -Z direction) crossing the measurement optical path. The guide member 45 has a guide surface 45a for guiding the gas blown out from the blowout port 44 to a gas flow in the 1 st direction (for example, -X direction) along the measurement optical path by using the coanda effect. According to the configuration of the guide member 45, the gas blown out from the air outlet 44 can be caused to flow along the guide surface 45a by the coanda effect, and converted into the gas flow in the 1 st direction along the measuring optical path. When the gas is blown out from the blowout part 43, the gas (indicated by arrow β) existing around the blowout part 43 is attracted by the gas blown out from the blowout part 43 by the bernoulli effect. That is, the flow rate of the gas blown out from the blowing unit 43 is increased by several times to several tens times and supplied to the measurement optical path.
The 2 nd supply unit 50 supplies gas to the measurement optical path so that a gas flow is formed in the measurement optical path toward the 2 nd direction (for example, -Z direction) of the gas that crosses the measurement optical path. For example, the 2 nd supply unit 50 has a plurality of outlets arranged along the measuring optical path (for example, -X direction), and blows out the compressed gas supplied from the outlet 39 of the temperature regulator 31 of the chamber 30 through the pipe 51 in a direction (for example, -Z direction) crossing the measuring optical path. In the case of the present embodiment, the 2 nd supply unit 50 may be configured to supply gas to a portion of the measurement optical path on the measurement unit side (laser head 21 side) than the portion to which the 1 st supply unit 40 supplies gas.
[ control of flow rate and temperature of gas ]
In the configuration of the 1 st supply unit 40 in the present embodiment, the gas supplied (blown) from the 1 st supply unit 40 to the measurement optical path collides with the substrate table 14 (or the cylindrical mirror 24). Thus, in the measuring optical path around the substrate stage 14, the flow of the gas supplied from the 1 st supply unit 40 changes. In this case, the substrate table 14 or a heat source around the substrate table is involved in the gas heated by the heat source, and fluctuation (hereinafter, sometimes referred to as "fluctuation of the gas") occurs in the temperature, pressure, humidity, or the like of the gas on the measurement light path. Such fluctuation of the gas changes the refractive index in the measurement optical path, and thus becomes a factor of measurement error in the measurement unit 20. Further, since such fluctuation of the gas becomes more remarkable as the distance a between the substrate table 14 and the blowout part 43 (blowout port 44) of the 1 st supply part 40 becomes closer, it is difficult to measure the position of the substrate table 14 with high accuracy.
Thus, the control unit CNT of the present embodiment controls the flow rate adjusting unit 41 of the 1 st supply unit 40 so as to change the flow rate of the (blown) gas supplied from the 1 st supply unit 40 to the measurement optical path according to the position of the substrate table 14 in the 1 st direction along the measurement optical path. For example, the control unit CNT controls the flow rate adjusting unit 41 of the 1 st supply unit 40 so that the shorter the distance between the substrate table 14 and the 1 st supply unit 40 (blowing unit 43) in the 1 st direction along the measurement optical path, the smaller the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path.
Specifically, for each of the plurality of states in which the positions of the substrate stage 14 in the 1 st direction are different from each other, the flow rate of the gas in which the measurement error of the measurement unit 20 becomes equal to or less than the allowable value when the gas is supplied from the 1 st supply unit 40 to the measurement optical path is obtained in advance by experiment or the like. Thus, information (hereinafter, sometimes referred to as "1 st information") indicating the correspondence between the position of the substrate table 14 in the 1 st direction and the flow rate of the gas to be supplied from the 1 st supply unit 40 to the measurement optical path can be obtained. The control unit CNT determines the flow rate of the gas to be supplied from the 1 st supply unit 40 to the measurement optical path based on the 1 st information acquired in advance and the positional information of the substrate table 14, and controls the flow rate adjustment unit 41 of the 1 st supply unit 40 based on the determined flow rate of the gas. In the present embodiment, the control unit CNT uses the measurement result of the measurement unit 20 as information indicating the position of the substrate table 14 as shown in fig. 2, but the present invention is not limited to this, and a signal value obtained from the substrate driving mechanism 14b of the substrate table 14 may be used.
When the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path is changed, a temperature change of the gas occurs due to adiabatic expansion. For example, as the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path decreases, the temperature of the gas decreases due to adiabatic expansion. Thus, the control unit CNT of the present embodiment can control the temperature adjustment unit 42 of the 1 st supply unit 40 so as to compensate for the temperature change of the gas due to the change in the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path.
Specifically, the temperature of the gas supplied from the blowout part 43 (blowout port 44) of the 1 st supply part 40 is measured in advance by experiments or the like, respectively, in a plurality of states in which the flow rates of the gas supplied from the blowout part 43 are different from each other, without performing temperature adjustment of the temperature adjustment part 42. Then, for each state, a heating amount (or cooling amount) required for compensating for a difference between a measured value of the temperature of the gas blown out from the blowout part 43 and the reference temperature is calculated. The reference temperature may be arbitrarily set, for example, as a set temperature of the thermostat 31 of the chamber 30. Thus, information (hereinafter, sometimes referred to as "2 nd information") indicating the correspondence relationship between the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path and the heating amount in the temperature adjustment unit 42 can be obtained. The control unit CNT determines the heating amount of the gas in the temperature adjustment unit 42 based on the 2 nd information acquired in advance and the flow rate of the gas adjusted by the flow rate adjustment unit 41, and controls the temperature adjustment unit 42 based on the determined heating amount.
A specific example of the configuration of the control unit CNT for performing the above-described control will be described. It is assumed that an electric valve is used as the flow rate adjusting unit 41 and a heater is used as the temperature adjusting unit 42. In this case, the control unit CNT has a pulse controller for controlling the opening degree of the electric valve, and the opening degree of the electric valve is controlled by driving a pulse motor mounted on the electric valve, so that the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path can be controlled. The control unit CNT has a solid-state relay circuit, and can control the temperature of the gas supplied from the 1 st supply unit 40 to the measurement optical path by controlling the switching of the heater at a high speed.
Next, a control example of the 1 st supply unit 40 according to the position of the substrate table 14 will be described with reference to fig. 4. Fig. 4 is a diagram showing a control example of the 1 st supply unit 40 according to the position of the substrate table 14. Fig. 4 (a) shows the distance a between the substrate table 14 and the blowout part 43 of the 1 st supply part 40, fig. 4 (b) shows the flow rate of the gas to be adjusted by the flow rate adjustment part 41, and fig. 4 (c) shows the heating amount to be given by the temperature adjustment part 42.
The interval 101 is the following interval: the substrate stage 14 (cylindrical mirror 24) moves away from the blowout part 43 of the 1 st supply part 40, and the distance a increases. In this section 101, the control unit CNT controls the flow rate adjustment unit 41 so that the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path increases as the distance a increases, and controls the temperature adjustment unit 42 so that the heating amount of the gas increases. The section 102 is a section in which the distance a is kept constant at a maximum. In this section 102, the control unit CNT controls the flow rate adjustment unit 41 and the temperature adjustment unit 42 so that the flow rate of the gas and the heating amount of the gas are constant, respectively.
Interval 103 is the following interval: the substrate table 14 moves so as to approach the blowout part 43 of the 1 st supply part 40, and the distance a becomes smaller. In this section 103, the control unit CNT controls the flow rate adjustment unit 41 so that the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path decreases as the distance a decreases, and controls the temperature adjustment unit 42 so that the heating amount of the gas decreases. Here, the control unit CNT may stop the supply of the gas from the 1 st supply unit 40 to the measurement optical path when the substrate table 14 is disposed below the blowout unit 43 of the 1 st supply unit 40.
[ configuration example of the 1 st supply portion and the 2 nd supply portion ]
Next, an example of the arrangement of the 1 st supply unit 40 and the 2 nd supply unit 50 in the exposure unit 10 will be described. Fig. 5 is a diagram showing an example of arrangement of the 1 st supply unit 40 and the 2 nd supply unit 50 in the exposure unit 10. The 1 st supply portion 40 (blowout portion 43) and the 2 nd supply portion 50 are disposed below the structure 17 as shown in fig. 5. The structure 17 is a member for covering the substrate W held on the substrate table 14 when the substrate table 14 is arranged on the +x-direction-most side, and may be a member constituting a part of the projection optical system 12, for example. A detection system 18 is provided between the 1 st supply unit 40 (blowout unit 43) and the projection optical system 12 in the optical axis direction of the measurement light ML. The detection system 18 may include, for example, a so-called off-axis viewer that detects marks formed on the substrate W.
As described above, the exposure apparatus 100 according to the present embodiment controls the flow rate adjustment unit 41 of the 1 st supply unit 40 so as to change the flow rate of the (blown) gas supplied from the 1 st supply unit 40 to the measurement optical path according to the position of the substrate table 14. The exposure apparatus 100 can control the temperature adjustment unit 42 of the 1 st supply unit 40 so as to compensate for a change in temperature of the gas due to a change in the flow rate of the gas supplied from the 1 st supply unit 40 to the measurement optical path. In this way, in the exposure apparatus 100, the fluctuation of the gas in the measurement optical path due to the change in the distance a between the substrate stage 14 and the 1 st supply portion 40 (blowout portion 43) can be reduced, and the position of the substrate stage 14 can be measured with high accuracy.
< embodiment 2 >
An exposure apparatus according to embodiment 2 of the present invention will be described. The exposure apparatus according to the present embodiment basically differs from the exposure apparatus 100 according to embodiment 1 in that a plurality of 1 st supply units 40 are provided. In the present embodiment, 21 st supply portions 40a and 40b for supplying gas are provided at positions in the measurement optical paths different from each other in the 1 st direction along the measurement optical path. Fig. 6 is a diagram showing the configuration of the stage device according to the present embodiment, and shows an example in which the 1 st supply units 40a, 40b and the 2 nd supply unit 50 are provided on the measurement optical path of the measurement unit 20 (laser head 21) for measuring the position of the substrate stage 14. As described in embodiment 1, the 1 st supply units 40a and 40b may include a flow rate adjusting unit 41, a temperature adjusting unit 42, and a blowing unit 43. In the following, for ease of explanation, the 1 st supply portion 40a on the right side in fig. 6 is referred to as "right supply portion 40a", and the 1 st supply portion 40b on the left side is referred to as "left supply portion 40b".
Next, a control example of the right supply unit 40a and the left supply unit 40b according to the position of the substrate table 14 will be described with reference to fig. 7. Fig. 7 is a diagram showing a control example of the right supply unit 40a and the left supply unit 40b according to the position of the substrate table 14. Fig. 7 (a) shows the distance a between the substrate table 14 and the blowout part 43a of the right supply part 40a, and the distance B between the substrate table 14 and the blowout part 43B of the left supply part 40B. Fig. 7 (b) shows the flow rate of the gas to be adjusted by the flow rate adjustment unit 41a of the right supply unit 40a, and fig. 7 (c) shows the flow rate of the gas to be adjusted by the flow rate adjustment unit 41b of the left supply unit 40b.
Interval 104 is the following interval: the substrate stage 14 (cylindrical mirror 24) moves away from the right supply portion 40a (blowout portion 43 a) and the distance a increases, but the measurement optical path is not yet arranged below the left supply portion 40b (blowout portion 43 b). In this section 104, the control unit CNT controls the flow rate adjustment unit 41a with respect to the right supply unit 40a so that the flow rate of the gas supplied to the measurement optical path increases as the distance a increases. On the other hand, the flow rate adjusting section 41b is controlled for the left supply section 40b so as to stop the supply of gas to the measurement optical path in advance.
Interval 105 is the following interval: in a state where the measuring optical path is arranged below the blowout part 43B of the left supply part 40B, the substrate table 14 moves away from the right supply part 40a (blowout part 43 a) and the left supply part 40B (blowout part 43B) so that the distance a and the distance B become larger. In this section 105, the right supply unit 40a receives the gas supply with a constant distance from the measurement optical path (the measurement optical path between the blowout units 43a and 43 b). Thus, the control unit CNT controls the flow rate adjustment unit 41a with respect to the right supply unit 40a so that the flow rate of the gas supplied to the measurement optical path is constant. On the other hand, the flow rate adjusting unit 41B is controlled so that the flow rate of the gas supplied to the measurement optical path increases as the distance B increases with respect to the left supply unit 40B.
The section 106 is a section in which the distance a and the distance B are kept constant at the maximum. In this section 106, the control unit CNT controls the flow rate adjustment unit 41a and the flow rate adjustment unit 41b with respect to the right supply unit 40a and the left supply unit 40b, respectively, so that the flow rate of the gas supplied to the measurement optical path becomes constant.
Interval 107 is the following interval: in a state where the measuring optical path is arranged below the blowout part 43B of the left supply part 40B, the substrate table 14 moves so as to approach the right supply part 40a (blowout part 43 a) and the left supply part 40B (blowout part 43B), and the distance a and the distance B become smaller. In this section 107, the control unit CNT controls the flow rate adjustment unit 41a with respect to the right supply unit 40a so that the flow rate of the gas supplied to the measurement optical path becomes constant. On the other hand, the flow rate adjusting unit 41B is controlled so that the flow rate of the gas supplied to the measurement optical path decreases as the distance B decreases with respect to the left supply unit 40B.
Interval 108 is the following interval: in a state where the measuring optical path is not arranged below the left supply portion 40b (blowout portion 43 b), the substrate table 14 moves so as to approach the right supply portion 40a (blowout portion 43 a) and the distance a becomes smaller. In this section 108, the control unit CNT controls the flow rate adjustment unit 41a with respect to the right supply unit 40a so that the flow rate of the gas supplied to the measurement optical path decreases as the distance a decreases. On the other hand, the flow rate adjusting section 41b is controlled for the left supply section 40b so as to stop the supply of gas to the measurement optical path in advance.
As described above, even when the 1 st supply units 40 are provided, the flow rate of the gas supplied from each 1 st supply unit 40 to the measurement optical path is changed according to the position of the substrate table 14. By providing the plurality of 1 st supply portions 40 in this manner, even when the movement stroke of the substrate table 14 is large, the fluctuation of the gas in the measurement optical path can be reduced, and the position of the substrate table 14 can be measured with high accuracy. In the present embodiment, as described in embodiment 1, the temperature adjustment unit 42 of each 1 st supply unit 40 may be controlled so as to compensate for the temperature change of the gas due to the change in the flow rate of the gas supplied to the measurement optical path.
Embodiment 3
An exposure apparatus according to embodiment 3 of the present invention will be described. The exposure apparatus of the present embodiment basically differs from the configuration of the exposure apparatus 100 of embodiment 1 in that the direction in which the gas is blown out from the blowout part 43 (blowout port 44) of the 1 st supply part 40 is not perpendicular to the optical axis direction of the measurement light ML. As shown in fig. 8, even when the gas flow of the gas blown out from the blowout part 43 and formed in the measurement optical path is not parallel to the 1 st direction (for example, -X direction) along the measurement optical path, the gas blown out from the blowout part 43 collides with the substrate table 14 (the cylindrical mirror 24). Specifically, the flow F of the gas blown out from the blowing portion 43 is composed of a component Fx perpendicular to the 1 st direction and a component Fy parallel to the 1 st direction. The component Fy collides with the substrate table 14, producing a change in fluctuation of the gas in the measurement light path. Therefore, in the present embodiment, as described in embodiment 1, the flow rate of the gas is controlled in accordance with the position of the substrate stage 14, so that the fluctuation of the gas in the measurement optical path can be reduced, and the position of the substrate stage 14 can be measured with high accuracy.
Embodiment of article manufacturing method
The method for manufacturing an article according to the embodiment of the present invention is suitable for manufacturing an article such as a microdevice such as a semiconductor device or an element having a microstructure. The method for manufacturing an article according to the present embodiment includes: a forming step of forming a pattern on a substrate using the above-described lithography apparatus (exposure apparatus) on a photosensitive agent applied to the substrate; and a processing step of processing the substrate on which the pattern is formed in the forming step. The manufacturing method further includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, photoresist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous over conventional methods in at least one of performance, quality, productivity, and production cost of an article.
The present invention is not limited to the above-described embodiments, and various changes and modifications may be made without departing from the spirit and scope of the invention. Accordingly, the claims are appended to disclose the scope of the invention.
Description of the reference numerals
10: exposure section, 11: illumination optics, 12: projection optics, 13: mask table, 14: substrate table, 20: measurement unit, 30: cavity, 40: 1 st supply unit, 50: and a 2 nd supply part.

Claims (11)

1. A table apparatus, comprising:
a table movable;
a measuring unit that irradiates the table with light to measure a position of the table;
a supply unit that supplies a gas to an optical path of the light so as to form a gas flow of the gas in a direction along the optical path; and
a control unit that controls the supply unit so as to change a flow rate of the gas supplied from the supply unit to the optical path in accordance with a position of the table in the direction,
the supply unit includes a temperature adjustment unit for adjusting the temperature of the gas supplied to the optical path,
the control unit controls the temperature adjustment unit so as to adjust the temperature of the gas supplied from the supply unit to the optical path in accordance with the position of the table.
2. The table apparatus of claim 1 wherein,
the supply part has a blowout part for blowing out the gas,
the control unit controls the supply unit so as to change the flow rate of the gas blown out from the blowout unit according to the position of the table in the direction.
3. The table apparatus of claim 1 wherein,
the control unit controls the supply unit so that the shorter the distance between the table and the supply unit in the direction is, the smaller the flow rate of the gas supplied from the supply unit to the optical path is.
4. The table apparatus of claim 1 wherein,
the control unit controls the supply unit so as to change the flow rate of the gas supplied from the supply unit to the optical path based on the measurement result of the position of the table obtained by the measurement unit.
5. The table apparatus of claim 1 wherein,
the control unit controls the supply unit so that supply of the gas from the supply unit to the optical path is stopped according to the position of the table in the direction.
6. The table apparatus of claim 1 wherein,
the control unit controls the temperature adjustment unit so as to compensate for a change in temperature of the gas caused by a change in the flow rate of the gas supplied from the supply unit to the optical path.
7. The table apparatus of claim 1 wherein,
the stage device includes a plurality of the supply units that supply the gas at positions in the optical paths that are different from each other in the direction.
8. The table apparatus of claim 1 wherein,
the stage device further includes a 2 nd supply unit that supplies gas to the optical path so as to form a gas flow of the gas in a direction crossing the optical path on the optical path.
9. The table apparatus of claim 8 wherein,
the 2 nd supply unit supplies gas to a portion of the optical path on the measurement unit side of a portion to which the gas is supplied by the supply unit.
10. A lithographic apparatus for patterning a substrate, characterized in that,
the lithographic apparatus includes a stage apparatus having a stage capable of holding and moving the substrate,
the table device includes:
a table movable;
a measuring unit that irradiates the table with light to measure a position of the table;
a supply unit that supplies a gas to an optical path of the light so as to form a gas flow of the gas in a direction along the optical path; and
a control unit that controls the supply unit so as to change a flow rate of the gas supplied from the supply unit to the optical path in accordance with a position of the table in the direction,
the supply unit includes a temperature adjustment unit for adjusting the temperature of the gas supplied to the optical path,
the control unit controls the temperature adjustment unit so as to adjust the temperature of the gas supplied from the supply unit to the optical path in accordance with the position of the table.
11. A method for manufacturing an article, characterized in that,
an article is manufactured from a substrate subjected to a forming process and a processing process,
the forming process forms a pattern on a substrate using a lithographic apparatus,
the processing step is to process the substrate on which the pattern is formed in the forming step,
the lithographic apparatus includes a stage apparatus having a stage capable of holding and moving the substrate,
the table device includes:
a table movable;
a measuring unit that irradiates the table with light to measure a position of the table;
a supply unit that supplies a gas to an optical path of the light so as to form a gas flow of the gas in a direction along the optical path; and
a control unit that controls the supply unit so as to change a flow rate of the gas supplied from the supply unit to the optical path in accordance with a position of the table in the direction,
the supply unit includes a temperature adjustment unit for adjusting the temperature of the gas supplied to the optical path,
the control unit controls the temperature adjustment unit so as to adjust the temperature of the gas supplied from the supply unit to the optical path in accordance with the position of the table.
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JP2020177142A (en) 2020-10-29
CN111830791A (en) 2020-10-27

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