CN105137719A - Gas supply device and photoetching projection objective provided with same - Google Patents
Gas supply device and photoetching projection objective provided with same Download PDFInfo
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- CN105137719A CN105137719A CN201510600397.2A CN201510600397A CN105137719A CN 105137719 A CN105137719 A CN 105137719A CN 201510600397 A CN201510600397 A CN 201510600397A CN 105137719 A CN105137719 A CN 105137719A
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- 238000001259 photo etching Methods 0.000 title 1
- 238000001459 lithography Methods 0.000 claims description 25
- 239000002245 particle Substances 0.000 claims description 8
- 230000001276 controlling effect Effects 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 13
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 239000003344 environmental pollutant Substances 0.000 abstract description 4
- 231100000719 pollutant Toxicity 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 103
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000003749 cleanliness Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000006837 decompression Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
本发明公开了一种气体供给装置及具有其的光刻投影物镜，该气体供给装置包括：气源及供气控制管路，供气控制管路的一端连通气源，另一端用于与物镜本体的内部腔室连通；供气控制管路包括：设于管路上的热交换器、减压阀、质量流量控制器，其中，热交换器用于对工作气体进行热交换以调节温度；减压阀用于对工作气体的供气压力进行调节；质量流量控制器用于对工作气体的流量进行调节。通过对气源提供的工作气体进行处理，使得提供给物镜本体的内部腔室的工作气体的压力、流量、温度等参数稳定，其结构简单、易操作且便于维护，有效地保障了光刻投影物镜正常工作情况下环境参数稳定，且避免外部环境的污染物进入物镜本体内部以对光学系统造成污染。
The invention discloses a gas supply device and a lithographic projection objective lens provided therewith. The gas supply device comprises: a gas source and a gas supply control pipeline, one end of the gas supply control pipeline communicates with the gas source, and the other end is used for connecting with the objective lens The internal chamber of the body is connected; the gas supply control pipeline includes: a heat exchanger, a pressure reducing valve, and a mass flow controller arranged on the pipeline, wherein the heat exchanger is used for heat exchange of the working gas to adjust the temperature; The valve is used to regulate the supply pressure of the working gas; the mass flow controller is used to regulate the flow of the working gas. By processing the working gas provided by the gas source, the pressure, flow rate, temperature and other parameters of the working gas supplied to the inner chamber of the objective lens body are stabilized. The environmental parameters of the objective lens are stable under normal working conditions, and the pollutants from the external environment are prevented from entering the interior of the objective lens body to cause pollution to the optical system.
Description
技术领域 technical field
本发明涉及光刻投影物镜控制领域，特别地，涉及一种气体供给装置。此外，本发明还涉及一种包括上述气体供给装置的光刻投影物镜。 The invention relates to the field of lithographic projection objective lens control, in particular to a gas supply device. In addition, the present invention also relates to a lithographic projection objective lens comprising the above-mentioned gas supply device.
背景技术 Background technique
光刻投影物镜是一种超精密光学系统，是光刻机的核心部件，它是影响光刻分辨力和线宽的关键。随着光刻精度的提高，对环境的要求如对环境温度、气压、洁净度等的要求，也越来越苛刻。物镜内部存在大量的热源包括各种电机及准分子激光器等，温度的变化会导致物镜焦面位置改变和影响物镜的成像质量，同时物镜内部需要密封环境及高纯、洁净的氮气防止空气进入投影物镜内部污染光学镜片，同时需要保证氮气具有恒定压力和流量，降低对光学表面面形的影响。 The lithography projection objective lens is an ultra-precision optical system and the core component of the lithography machine. It is the key to the lithography resolution and line width. With the improvement of lithography precision, the requirements for the environment, such as the requirements for ambient temperature, air pressure, and cleanliness, are becoming more and more stringent. There are a lot of heat sources inside the objective lens, including various motors and excimer lasers, etc. Changes in temperature will cause changes in the focal plane position of the objective lens and affect the imaging quality of the objective lens. At the same time, the inside of the objective lens needs a sealed environment and high-purity, clean nitrogen to prevent air from entering the projection The inside of the objective lens pollutes the optical lens, and at the same time, it is necessary to ensure that the nitrogen has a constant pressure and flow rate to reduce the impact on the shape of the optical surface.
投影物镜内部腔室的温度环境约为22℃。目前，针对193nm激光光源，通过对环境温度在21.5℃~22.5℃范围内的10组不同环境温度的物镜系统热浸没仿真实验，得出当物镜内部腔室环境温度变化约0.01℃时，波像差最大变化0.12nm，倍率最大变化0.4ppm，畸变最大变化0.09nm。投影物镜内部腔室的气压约为：750mbar~1050mbar。目前，针对193nm激光光源，根据光学设计与仿真分析的结果，倍率与气压的关系约为：倍率与气压在此范围内近似为线性关系，气压变化100pa时倍率变化了0.64ppm，气压变化76pa时倍率变化了0.5ppm，气压变化15.2pa时倍率变化了0.1ppm时。由此可以看出光刻投影物镜内部气体压力、温度等参数的变化，将严重影响光刻的精度，因此，需要保证光刻投影物镜内部环境的稳定，降低对光学系统的影响。 The temperature environment of the internal chamber of the projection objective is about 22°C. At present, for the 193nm laser light source, through the thermal immersion simulation experiments of 10 groups of objective lens systems with different ambient temperatures in the range of 21.5°C to 22.5°C, it is obtained that when the ambient temperature of the inner cavity of the objective lens changes by about 0.01°C, the wave image The maximum change in difference is 0.12nm, the maximum change in magnification is 0.4ppm, and the maximum change in distortion is 0.09nm. The air pressure in the inner chamber of the projection objective lens is about: 750mbar~1050mbar. At present, for the 193nm laser light source, according to the results of optical design and simulation analysis, the relationship between magnification and air pressure is approximately: the relationship between magnification and air pressure is approximately linear within this range. When the magnification is changed by 0.5ppm, when the air pressure changes by 15.2pa, the magnification is changed by 0.1ppm. It can be seen from this that changes in parameters such as gas pressure and temperature inside the lithography projection objective will seriously affect the accuracy of lithography. Therefore, it is necessary to ensure the stability of the internal environment of the lithography projection objective and reduce the impact on the optical system.
光刻投影物镜内部气体的供气气源一般采用外部气罐的形式，其压力、流量、纯净度、温度等指标都不能够满足要求，投影物镜内部气体环境要求高纯度(氮气含量99.999999%)、颗粒度(最大3nm)、恒定流量(12NL/H)、压力(100±10pa)。 The gas supply source of the internal gas of the lithography projection objective generally adopts the form of an external gas tank, and its pressure, flow rate, purity, temperature and other indicators cannot meet the requirements. The internal gas environment of the projection objective requires high purity (nitrogen content 99.999999%) , particle size (maximum 3nm), constant flow rate (12NL/H), pressure (100±10pa).
因此，亟需设计一种光刻投影物镜高纯精密气体供给装置对外部的气源进行处理，并提供给投影物镜内部腔室稳定的压力、流量、温度、洁净度的惰性气体。 Therefore, it is urgent to design a high-purity and precise gas supply device for lithography projection objective lens to process the external gas source and provide inert gas with stable pressure, flow rate, temperature and cleanliness to the internal chamber of projection objective lens.
发明内容 Contents of the invention
本发明提供了一种气体供给装置及具有其的光刻投影物镜，以解决现有的光刻投影物镜内部腔室的压力、流量、温度等难以有效控制的技术问题。 The invention provides a gas supply device and a lithography projection objective lens with the same, in order to solve the technical problem that the pressure, flow rate and temperature of the internal chamber of the existing lithography projection objective lens are difficult to be effectively controlled.
本发明采用的技术方案如下： The technical scheme that the present invention adopts is as follows:
根据本发明的一个方面，提供一种气体供给装置，用于给光刻投影物镜的物镜本体内部腔室提供工作气体，气体供给装置包括：气源及供气控制管路，供气控制管路的一端连通气源，另一端用于与物镜本体的内部腔室连通； According to one aspect of the present invention, a gas supply device is provided, which is used to provide working gas to the internal cavity of the objective lens body of the lithography projection objective lens. The gas supply device includes: a gas source and a gas supply control pipeline, and a gas supply control pipeline One end is connected to the air source, and the other end is used to communicate with the inner chamber of the objective lens body;
供气控制管路包括：设于管路上的热交换器、减压阀、质量流量控制器，其中， The gas supply control pipeline includes: a heat exchanger, a pressure reducing valve, and a mass flow controller arranged on the pipeline, wherein,
热交换器用于对工作气体进行热交换以调节温度； The heat exchanger is used to exchange heat for the working gas to adjust the temperature;
减压阀用于对工作气体的供气压力进行调节； The pressure reducing valve is used to adjust the supply pressure of the working gas;
质量流量控制器用于对工作气体的流量进行调节。 Mass flow controllers are used to regulate the flow of working gas.
进一步地，供气控制管路还包括：设于管路上的过滤器，用于对工作气体的颗粒度进行过滤控制。 Further, the gas supply control pipeline further includes: a filter arranged on the pipeline for filtering and controlling the particle size of the working gas.
进一步地，供气控制管路还包括：设于管路上的纯化器，用于对工作气体的纯度进行提纯控制。 Further, the gas supply control pipeline also includes: a purifier arranged on the pipeline for purifying and controlling the purity of the working gas.
进一步地，供气控制管路还包括：设于管路上的泄压阀，用于对工作气体提供过压安全保护控制。 Further, the gas supply control pipeline also includes: a pressure relief valve arranged on the pipeline, which is used to provide overpressure safety protection control for the working gas.
进一步地，供气控制管路还包括：压力传感器，设于减压阀的出口侧的管路上，用于测量经减压阀调节后的压力值，以根据压力值控制减压阀。 Further, the air supply control pipeline further includes: a pressure sensor, which is arranged on the pipeline on the outlet side of the pressure reducing valve, and is used to measure the pressure value adjusted by the pressure reducing valve, so as to control the pressure reducing valve according to the pressure value.
进一步地，减压阀包括一级减压阀和二级减压阀，一级减压阀的出口侧设有第一压力传感器，二级减压阀的出口侧设有第二压力传感器。 Further, the pressure reducing valve includes a primary pressure reducing valve and a secondary pressure reducing valve, a first pressure sensor is provided on the outlet side of the primary pressure reducing valve, and a second pressure sensor is provided on the outlet side of the secondary pressure reducing valve.
进一步地，热交换器包括初级热交换器和次级热交换器，其中，初级热交换器用于对工作气体进行热交换以粗略调节温度，次级热交换器用于对经初级热交换器调节后的工作气体进行热交换以精细调节温度。 Further, the heat exchanger includes a primary heat exchanger and a secondary heat exchanger, wherein the primary heat exchanger is used for heat exchange of the working gas to roughly adjust the temperature, and the secondary heat exchanger is used for adjusting The working gas is heat exchanged to finely adjust the temperature.
进一步地，供气控制管路包括依次连接的初级热交换器、隔膜阀、一级减压阀、第一压力传感器、过滤器、二级减压阀、第二压力传感器、质量流量控制器、纯化器、泄压阀、次级热交换器，其中， Further, the air supply control pipeline includes a primary heat exchanger, a diaphragm valve, a primary pressure reducing valve, a first pressure sensor, a filter, a secondary pressure reducing valve, a second pressure sensor, a mass flow controller, Purifiers, pressure relief valves, secondary heat exchangers, where,
初级热交换器连通气源与隔膜阀，用于对工作气体进行热交换以粗略调节温度； The primary heat exchanger communicates with the gas source and the diaphragm valve for heat exchange of the working gas to roughly adjust the temperature;
隔膜阀用于对经过初级热交换的工作气体供给进行控制； Diaphragm valves are used to control the supply of working gas through primary heat exchange;
一级减压阀用于对工作气体的供气压力进行粗略调节； The primary pressure reducing valve is used to roughly adjust the supply pressure of the working gas;
第一压力传感器用于对一级减压阀调节后的压力进行测量； The first pressure sensor is used to measure the pressure adjusted by the primary pressure reducing valve;
过滤器用于对工作气体的颗粒度进行过滤控制； The filter is used to filter and control the particle size of the working gas;
二级减压阀用于对工作气体的供气压力进行精细调节； The secondary pressure reducing valve is used to finely adjust the supply pressure of the working gas;
第二压力传感器用于对二级减压阀调节后的压力进行测量； The second pressure sensor is used to measure the pressure adjusted by the secondary pressure reducing valve;
质量流量控制器用于对工作气体的流量进行调节； The mass flow controller is used to adjust the flow of working gas;
纯化器用于对工作气体的纯度进行提纯控制； The purifier is used to purify and control the purity of the working gas;
泄压阀用于对工作气体提供过压安全保护控制； The pressure relief valve is used to provide overpressure safety protection control for the working gas;
次级热交换器的出口连通物镜本体的内部腔室，用于对工作气体进行热交换以精细调节温度。 The outlet of the secondary heat exchanger communicates with the inner cavity of the objective lens body, and is used for heat exchange of the working gas to finely adjust the temperature.
根据本发明的另一方面，提供一种光刻投影物镜，包括物镜本体，物镜本体的内腔连通如上述的气体供给装置。 According to another aspect of the present invention, there is provided a lithography projection objective lens, which includes an objective lens body, and the inner cavity of the objective lens body communicates with the above-mentioned gas supply device.
进一步地，物镜本体的内腔设有出气口，出气口连接限流器，用于在保证物镜本体内腔的工作气体环境的前提下，对耗气量进行约束控制。 Further, the inner cavity of the objective lens body is provided with an air outlet, and the air outlet is connected to a flow limiter, which is used to restrict and control the gas consumption under the premise of ensuring the working gas environment in the inner cavity of the objective lens body.
本发明具有以下有益效果： The present invention has the following beneficial effects:
本发明气体供给装置及具有其的光刻投影物镜，通过对气源提供的工作气体进行处理，使得提供给物镜本体的内部腔室的工作气体的压力、流量、温度等参数稳定，其结构简单、易操作且便于维护，有效地保障了光刻投影物镜正常工作情况下环境参数稳定，且避免外部环境的污染物进入物镜本体内部以对光学系统造成污染。 The gas supply device of the present invention and the lithographic projection objective lens with it, by processing the working gas provided by the gas source, the parameters such as pressure, flow rate and temperature of the working gas supplied to the inner chamber of the objective lens body are stable, and the structure is simple , Easy to operate and easy to maintain, effectively ensuring the stability of the environmental parameters of the lithography projection objective under normal working conditions, and preventing pollutants from the external environment from entering the interior of the objective lens to cause pollution to the optical system.
除了上面所描述的目的、特征和优点之外，本发明还有其它的目的、特征和优点。下面将参照图，对本发明作进一步详细的说明。 In addition to the objects, features and advantages described above, the present invention has other objects, features and advantages. Hereinafter, the present invention will be described in further detail with reference to the drawings.
附图说明 Description of drawings
构成本申请的一部分的附图用来提供对本发明的进一步理解，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中： The accompanying drawings constituting a part of this application are used to provide further understanding of the present invention, and the schematic embodiments and descriptions of the present invention are used to explain the present invention, and do not constitute an improper limitation of the present invention. In the attached picture:
图1是本发明优选实施例光刻投影物镜的结构示意图； Fig. 1 is a schematic structural view of a photolithography projection objective lens in a preferred embodiment of the present invention;
图2是激光照射下N2杂质不同的膜透过率对比曲线图。 Fig. 2 is a comparison curve of film transmittance with different N 2 impurities under laser irradiation.
具体实施方式 Detailed ways
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本发明。 It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.
参照图1，本发明的优选实施例提供了提供一种气体供给装置，用于给光刻投影物镜的物镜本体1内部腔室提供工作气体，本实施例气体供给装置包括：气源2及供气控制管路，供气控制管路的一端连通气源2，另一端用于与物镜本体1的内部腔室连通；供气控制管路包括：设于管路上的热交换器、减压阀、质量流量控制器10，其中，热交换器用于对工作气体进行热交换以调节温度；减压阀用于对工作气体的供气压力进行调节；质量流量控制器10用于对工作气体的流量进行调节。本实施例中，工作气体为惰性气体，以防止空气进入物镜本体1内部腔室而污染光学镜片，气源2为提供惰性气体的气瓶或者气罐等装置。本实施例通过对气源2提供的工作气体进行处理，使得提供给物镜本体1的内部腔室的工作气体的压力、流量、温度等参数稳定，其结构简单、易操作且便于维护，有效地保障了光刻投影物镜正常工作情况下环境参数稳定，且避免外部环境的污染物进入物镜本体内部以对光学系统造成污染。 With reference to Fig. 1, preferred embodiment of the present invention provides and provides a kind of gas supply device, is used for providing working gas to the objective lens body 1 internal cavity of lithography projection objective lens, and present embodiment gas supply device comprises: gas source 2 and supply Gas control pipeline, one end of the gas supply control pipeline is connected to the gas source 2, and the other end is used to communicate with the inner chamber of the objective lens body 1; the gas supply control pipeline includes: a heat exchanger and a pressure reducing valve arranged on the pipeline , the mass flow controller 10, wherein, the heat exchanger is used to heat exchange the working gas to adjust the temperature; the pressure reducing valve is used to adjust the supply pressure of the working gas; the mass flow controller 10 is used to control the flow rate of the working gas Make adjustments. In this embodiment, the working gas is an inert gas to prevent air from entering the inner cavity of the objective lens body 1 and contaminating the optical lens. The gas source 2 is a device such as a gas cylinder or a gas tank that provides inert gas. In this embodiment, by processing the working gas provided by the gas source 2, the parameters such as the pressure, flow rate and temperature of the working gas provided to the inner chamber of the objective lens body 1 are stabilized, and its structure is simple, easy to operate and easy to maintain, effectively The environmental parameters are guaranteed to be stable under the normal working condition of the lithography projection objective lens, and the pollutants from the external environment are prevented from entering the objective lens body to cause pollution to the optical system.
进一步地，供气控制管路还包括：设于管路上的过滤器7，用于对工作气体的颗粒度进行过滤控制。 Further, the gas supply control pipeline further includes: a filter 7 arranged on the pipeline for filtering and controlling the particle size of the working gas.
进一步地，供气控制管路还包括：设于管路上的纯化器11，用于对工作气体的纯度进行提纯控制。 Further, the gas supply control pipeline further includes: a purifier 11 arranged on the pipeline, used for purifying and controlling the purity of the working gas.
可选地，本实施例供气控制管路还包括：设于管路上的泄压阀12，用于对工作气体提供过压安全保护控制。当管路上的工作气体的压力值超过安全阀值，则通过泄压阀12泄压以保护物镜本体1的内部环境。 Optionally, the gas supply control pipeline in this embodiment further includes: a pressure relief valve 12 provided on the pipeline for providing overpressure safety protection control for the working gas. When the pressure of the working gas on the pipeline exceeds the safety threshold, the pressure is released through the pressure relief valve 12 to protect the internal environment of the objective lens body 1 .
可选地，本实施例供气控制管路还包括：压力传感器，设于减压阀的出口侧的管路上，用于测量经减压阀调节后的压力值，以根据压力值控制减压阀。 Optionally, the gas supply control pipeline in this embodiment further includes: a pressure sensor, which is arranged on the pipeline on the outlet side of the pressure reducing valve, and is used to measure the pressure value adjusted by the pressure reducing valve, so as to control the pressure reduction according to the pressure value valve.
可选地，参照图1，本实施例中，减压阀包括一级减压阀5和二级减压阀8，一级减压阀5的出口侧设有第一压力传感器6，二级减压阀8的出口侧设有第二压力传感器9。 Optionally, referring to Fig. 1, in this embodiment, the pressure reducing valve includes a primary pressure reducing valve 5 and a secondary pressure reducing valve 8, the outlet side of the primary pressure reducing valve 5 is provided with a first pressure sensor 6, and the secondary pressure reducing valve 5 The outlet side of the pressure reducing valve 8 is provided with a second pressure sensor 9 .
可选地，参照图1，热交换器包括初级热交换器3和次级热交换器13，其中，初级热交换器3用于对工作气体进行热交换以粗略调节温度，次级热交换器13用于对经初级热交换器3调节后的工作气体进行热交换以精细调节温度。本实施例通过二级热交换控制，可以精确地对光刻投影物镜内部工作气体的温度，以保障其工作环境参数稳定。 Optionally, referring to FIG. 1, the heat exchanger includes a primary heat exchanger 3 and a secondary heat exchanger 13, wherein the primary heat exchanger 3 is used for heat exchange of the working gas to roughly adjust the temperature, and the secondary heat exchanger 13 is used for heat exchange of the working gas regulated by the primary heat exchanger 3 to finely adjust the temperature. In this embodiment, through two-stage heat exchange control, the temperature of the working gas inside the lithographic projection objective lens can be accurately adjusted to ensure the stability of its working environment parameters.
参照图1，作为一种较佳的实施例，该供气控制管路包括依次连接的初级热交换器3、隔膜阀4、一级减压阀5、第一压力传感器6、过滤器7、二级减压阀8、第二压力传感器9、质量流量控制器10、纯化器11、泄压阀12、次级热交换器13，其中， Referring to Fig. 1, as a preferred embodiment, the gas supply control pipeline includes a primary heat exchanger 3, a diaphragm valve 4, a primary pressure reducing valve 5, a first pressure sensor 6, a filter 7, Secondary decompression valve 8, second pressure sensor 9, mass flow controller 10, purifier 11, pressure relief valve 12, secondary heat exchanger 13, wherein,
初级热交换器3连通气源2与隔膜阀4，用于对工作气体进行热交换以粗略调节温度； The primary heat exchanger 3 communicates with the gas source 2 and the diaphragm valve 4, and is used for heat exchange of the working gas to roughly adjust the temperature;
隔膜阀4用于对经过初级热交换的工作气体供给进行控制；该隔离阀4可以为电磁阀或者开关阀等，以控制工作气体的供给通断； Diaphragm valve 4 is used to control the supply of working gas after primary heat exchange; the isolation valve 4 can be a solenoid valve or a switching valve to control the supply of working gas;
一级减压阀5用于对工作气体的供气压力进行粗略调节； The primary pressure reducing valve 5 is used to roughly adjust the supply pressure of the working gas;
第一压力传感器6用于对一级减压阀5调节后的压力进行测量； The first pressure sensor 6 is used to measure the pressure adjusted by the primary decompression valve 5;
过滤器7用于对工作气体的颗粒度进行过滤控制。优选地，过滤器7的数量可以为二个或者多个，多个过滤器并联在气体管路内。 The filter 7 is used to filter and control the particle size of the working gas. Preferably, the number of filters 7 can be two or more, and multiple filters are connected in parallel in the gas pipeline.
二级减压阀8用于对工作气体的供气压力进行精细调节； The secondary decompression valve 8 is used to finely adjust the supply pressure of the working gas;
第二压力传感器9用于对二级减压阀8调节后的压力进行测量； The second pressure sensor 9 is used to measure the pressure adjusted by the secondary decompression valve 8;
质量流量控制器10用于对工作气体的流量进行调节； The mass flow controller 10 is used to regulate the flow of the working gas;
纯化器11用于对工作气体的纯度进行提纯控制。优选地，传化器11的数量可以为二个或者多个，连接方式为并联在气体管路内。 The purifier 11 is used to purify and control the purity of the working gas. Preferably, there may be two or more transmitters 11, and the connection mode is parallel connection in the gas pipeline.
泄压阀12用于对工作气体提供过压安全保护控制；当管路上的工作气体的压力值超过安全阀值，则通过泄压阀12泄压以保护物镜本体1的内部环境。 The pressure relief valve 12 is used to provide overpressure safety protection control for the working gas; when the pressure value of the working gas on the pipeline exceeds the safety threshold, the pressure relief valve 12 is used to release the pressure to protect the internal environment of the objective lens body 1 .
次级热交换器13的出口连通物镜本体1的内部腔室，用于对工作气体进行热交换以精细调节温度。 The outlet of the secondary heat exchanger 13 communicates with the inner chamber of the objective lens body 1 and is used for heat exchange of the working gas to finely adjust the temperature.
由于污染的监控与控制是光刻物镜环境控制过程中必不可少的环节之一。污染控制的好坏将影响视场均匀性（fielduniformity）、物镜透过率（lenstransmission）、刻线一致性（CDuniformity）以及杂散光（scatteredlight）等诸多光学特性，而以往光刻物镜的气体供给装置往往忽视了对于供给气体中污染物的监控，导致众多问题的产生。 The monitoring and control of pollution is one of the indispensable links in the process of environmental control of lithography objective lens. The quality of pollution control will affect many optical properties such as field uniformity, lens transmission, CD uniformity, and stray light. In the past, the gas supply device of the lithography objective lens Monitoring of contaminants in the gas supply is often overlooked, leading to numerous problems.
物镜内污染的类型主要有H2O、O2、CO、CO2、H2等无机物，以及苯、酸、烷、醇等多种有机化合物，总体来看，污染来源大致可分为以下几类： The types of pollution in the objective lens mainly include H 2 O, O 2 , CO, CO 2 , H 2 and other inorganic substances, as well as various organic compounds such as benzene, acid, alkanes, alcohols, etc. Generally speaking, the pollution sources can be roughly divided into the following Several categories:
1）物镜装配过程中，由于外部环境洁净度较低而引入的灰尘； 1) During the assembly process of the objective lens, the dust introduced due to the low cleanliness of the external environment;
2）充入的氮气不纯，即便是99.9999%的高纯氮气，也需要对其成分进行检测； 2) The charged nitrogen is impure, even if it is 99.9999% high-purity nitrogen, its composition needs to be tested;
3）单镜集成过程中使用的胶在紫外光的照射下产生挥发或化学反应； 3) The glue used in the single mirror integration process volatilizes or reacts chemically under the irradiation of ultraviolet light;
4）光刻胶在紫外光照射下发生化学反应，污染物镜下窗口。 4) The photoresist reacts chemically under the irradiation of ultraviolet light and pollutes the window under the microscope.
而为了解决和控制由于充入光刻物镜中的气体导致物镜内污染的问题，在本实施例中在气体供给装置中设置了过滤器和纯化器，以实现在气体充入物镜之前进行净化，以避免污染的产生，参见图2所示为F2激光和ArF激光照射下对膜透过率的影响曲线，其中，优化前/后的主要差别为是否对氮气中的杂质进行过滤、纯化，由图2可知将气体过滤、纯化后再充入光刻物镜中，可明显提高其膜透过率，可见，在气体供给装置中设有过滤器和纯化器的必要性和重要性。 In order to solve and control the problem of contamination in the objective lens due to the gas charged into the lithography objective lens, in this embodiment, a filter and a purifier are provided in the gas supply device to purify the gas before filling the objective lens. To avoid pollution, see Figure 2, which shows the influence curves on the membrane transmittance under the irradiation of F2 laser and ArF laser. Among them, the main difference between before and after optimization is whether to filter and purify the impurities in the nitrogen gas. It can be seen from Fig. 2 that filtering and purifying the gas and then filling it into the photolithography objective lens can significantly improve the membrane transmittance. It can be seen that it is necessary and important to have a filter and a purifier in the gas supply device.
污染控制的好坏与投影物镜环境的洁净度、高纯氮气的杂质含量、物镜内外压差/密封性、充入气体流量是否会造成内部湍流等因素有关，因此需要一种本实施例中的装置保障物镜内部的密封环境及高纯、洁净的氮气以防止空气进入投影物镜内部污染光学镜片，同时需要保证氮气具有恒定压力和流量，降低对光学表面面形的影响。 The quality of pollution control is related to factors such as the cleanliness of the environment of the projection objective lens, the impurity content of high-purity nitrogen, the pressure difference/tightness inside and outside the objective lens, and whether the flow rate of the filling gas will cause internal turbulence. The device guarantees a sealed environment inside the objective lens and high-purity, clean nitrogen gas to prevent air from entering the projection objective lens and contaminating the optical lens. At the same time, it is necessary to ensure that the nitrogen gas has a constant pressure and flow rate to reduce the impact on the optical surface shape.
根据本发明的另一方面，提供一种光刻投影物镜，包括物镜本体1，物镜本体1的内腔连通如上述实施例的气体供给装置。 According to another aspect of the present invention, a lithography projection objective lens is provided, which includes an objective lens body 1 , and the inner cavity of the objective lens body 1 communicates with the gas supply device of the above-mentioned embodiment.
本实施例物镜本体1的内腔设有出气口，出气口连接限流器14，用于在保证物镜本体1内腔的工作气体环境的前提下，对耗气量进行约束控制。 In this embodiment, the inner cavity of the objective lens body 1 is provided with an air outlet, and the air outlet is connected to a flow limiter 14, which is used to restrict and control the gas consumption under the premise of ensuring the working gas environment in the inner cavity of the objective lens body 1.
本实施例光刻投影物镜高纯精密气体供给装置对外部气源的供给气体进行处理，并提供给光刻投影物镜内部腔室稳定的压力(100±10pa)、流量（12NL/H）、温度、颗粒度、洁净度等高纯精密惰性气体。保障了光刻投影物镜正常工作情况下环境参数稳定，并对投影物镜内部进行污染控制，避免外部环境的污染物质进入投影物镜内部对光学系统造成污染。本发明的优点在于：气体纯度高（氮气含量99.999999%），压力、流量稳定性好，结构简单，易操作，维护方便。 The high-purity and precise gas supply device for the lithography projection objective lens in this embodiment processes the supply gas from the external air source, and provides stable pressure (100±10pa), flow rate (12NL/H), and temperature to the internal chamber of the lithography projection objective lens. , particle size, cleanliness and other high-purity precision inert gas. It ensures the stability of the environmental parameters under the normal working condition of the lithography projection objective, and controls the pollution inside the projection objective to prevent the pollutants from the external environment from entering the projection objective and causing pollution to the optical system. The invention has the advantages of high gas purity (99.999999% nitrogen content), good pressure and flow stability, simple structure, easy operation and convenient maintenance.
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。 The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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