TW202040285A - Stage device, photolithography device, and method for manufacturing article in which the stage device includes a movable stage, a measurement unit measuring a position of the stage, a supply unit supplying gas to an optical path, and a control unit controlling the flow rate of the gas - Google Patents

Abstract

The present invention provides a technique to facilitate measurement of a position of a stage device with high accuracy, which involves a stage device, a photolithography device, and a method for manufacturing an article. The stage device includes: a stage, which is movable; a measurement unit, which measures a position of the stage by irradiating the stage with light; a supply unit, which supplies gas to an optical path of the light in order to form a gas flow of the gas on the optical path in a direction along the optical path; and a control unit, which controls the supply unit so as to change a flow rate of the gas supplied from the supply portion to the optical path according to the position of the stage in the direction.

Description

Carrier device, photoetching device and article manufacturing method

The invention relates to a stage device, a photoetching device and a method of manufacturing an article.

A photolithography apparatus used in the manufacture of a semiconductor device, a liquid crystal panel, or the like is provided with a stage device having a movable stage that can hold a substrate, an original plate, or the like. In the stage device, with the recent miniaturization of circuit patterns, the positioning accuracy of the stage is required to be improved. In order to achieve such a request, it is necessary to measure the position of the stage with high accuracy.

In the measurement of the position of the stage, a laser interferometer is generally used. For the laser interferometer, the fluctuation of the temperature, pressure, humidity, etc. of the gas in the measurement light path (sometimes called "gas fluctuation") The resulting change in the refractive index in the measurement light path may become the main cause of measurement errors. Patent Document 1 proposes a device that reduces the change in refractive index along the optical path of the light (laser beam) emitted from the laser interferometer by flowing gas along the optical path. [Prior Technical Literature] [Patent Literature]

Patent Document 1: Japanese Patent Application Publication No. 2011-133398

[Problems to be Solved by Invention]

Regarding the method of making gas flow along the optical path of the light emitted from the laser interferometer, the gas blown in the direction toward the carrier collides with the carrier, and the gas flow changes around the carrier, sometimes Gas fluctuations will occur. In this way, the fluctuation of the gas generated in the periphery of the stage becomes more noticeable as the distance between the gas blowing port and the stage becomes closer, and it is difficult to measure the position of the stage with high accuracy.

Therefore, an object of the present invention is to provide a technique that is advantageous for measuring the position of a stage with high accuracy. [Technical means to solve the problem]

In order to achieve the foregoing object, a stage device as an aspect of the present invention includes: a stage, which is movable; a measuring section that irradiates light on the stage to measure the position of the stage; and a supply section that faces the light The optical path supplies gas to form a gas flow in the direction along the optical path in the optical path; and a control unit that controls the supply unit to change the supply from the position of the stage in the direction The flow rate of the gas supplied to the optical path.

Other objects or other solutions of the present invention will be made clear in the following through preferred embodiments described with reference to the drawings. [Invention Effect]

According to the present invention, for example, it is possible to provide a technique that is advantageous for measuring the position of a stage with high accuracy.

Hereinafter, the embodiments will be described in detail with reference to the drawings. In addition, the following embodiments do not limit the invention related to the scope of the patent application. The embodiments describe multiple features, but not all of these features are essential technical features of the invention, and multiple features can also be combined arbitrarily. In addition, in the drawings, the same or equivalent components are denoted by the same reference symbols, and repeated descriptions are omitted.

In the following embodiments, an example in which the stage device according to the present invention is applied to an exposure device that exposes a substrate will be described, but it is not limited to this. For example, it can also be applied to other photolithography devices such as molding devices (imprinting devices, planarization devices) that use molds to mold the composition on the substrate, or scribing devices that use charged particle beams to form patterns on the substrate. The stage device related to the invention. In addition, below, the directions orthogonal to each other in a plane parallel to the surface of the substrate are referred to as the X direction and the Y direction, and the direction perpendicular to the surface of the substrate is referred to as the Z direction.

<First Embodiment> The exposure apparatus 100 according to the first embodiment of the present invention will be described. FIG. 1 is an overall schematic diagram of an exposure apparatus 100 according to the first embodiment. The exposure apparatus 100 of this embodiment is an apparatus that transfers a pattern of a mask M (original plate) to a large substrate W such as a glass substrate for liquid crystal panels, and has an exposure section 10 (main body) that performs exposure processing of the substrate W , The chamber 30 containing the exposure unit 10, and the control unit CNT. The control unit CNT is composed of, for example, a computer including a CPU or a memory, and controls each part of the exposure apparatus 100.

First, the configuration of the exposure unit 10 will be described. The exposure section 10 may include, for example, an illumination optical system 11, a projection optical system 12, a mask stage 13, a substrate stage 14, an observation optical system 15, and a measurement section 20.

The illumination optical system 11 is an optical system that includes various optical elements such as lenses, mirrors, and optical integrators, and illuminates the mask M with light from a light source 11a such as a mercury lamp. In addition, the projection optical system 12 is an optical system that projects an image of the pattern of the mask M illuminated by the illumination optical system 11 onto the substrate W. In the case of this embodiment, the projection optical system 12 is constituted as a mirror projection type equal magnification imaging optical system including a flat mirror, a concave mirror, a convex mirror, etc., but it is not limited to this, and magnification imaging may also be applied. Optical systems or other types of optical systems such as reduction imaging optical systems.

The mask stage 13 includes a mask jig 13a and a mask drive mechanism 13b, and is configured to be able to hold the mask M and move in the XY direction. The mask clamp 13a holds the mask M by a vacuum clamp, an electrostatic clamp, or the like. The mask drive mechanism 13b may be configured to support the mask jig 13a and move in the XY direction. In addition, the substrate stage 14 includes a substrate holder 14a and a substrate drive mechanism 14b, and is configured to be able to move the substrate W while holding it. The substrate holder 14a holds the substrate W by a vacuum chuck, an electrostatic chuck, or the like. The substrate drive mechanism 14b is configured to support the substrate holder 14a and move in the XY direction on the table 16.

The observation optical system 15 is an optical system arranged above the mask stage 13 for observing the substrate W through the mask M and the projection optical system 12. In the case of this embodiment, the observation optical system 15 may include, for example, an alignment detection system (alignment viewer) that detects marks formed on the mask M and the substrate W for alignment of the mask M and the substrate W, respectively. ).

The measurement unit 20 is composed of, for example, a laser interferometer, and irradiates measurement light (laser) to the mask stage 13 and the substrate stage 14 to measure the position of each stage in real time. In the case of the present embodiment, the measurement unit 20 may include a laser head 21, a beam splitter 22, and cylindrical mirrors 23 and 24, for example. The cylindrical mirror 23 is installed on the mask stage 13, and the cylindrical mirror 24 is installed on the substrate stage 14. The measurement light ML (laser) emitted from the laser head 21 is branched by the beam splitter 22, and a part of the measurement light ML is reflected by the mirror 25 and enters the cylindrical mirror 23 of the mask stage 13, and the rest is measured The light ML enters the cylindrical mirror 24 of the substrate stage 14. The measurement light ML reflected by the cylindrical mirror 23 of the mask stage 13 and the measurement light ML reflected by the cylindrical mirror 24 of the substrate stage 14 interfere with each other by passing through the beam splitter 22 again. Therefore, the measurement unit 20 (laser head 21) can measure the relative positions of the mask stage 13 (mask M) and the substrate stage 14 (substrate W) based on the interference pattern.

In the exposure apparatus 100, the mask M held by the mask stage 13 and the substrate W held by the substrate stage 14 are respectively arranged at positions that are optically conjugate via the projection optical system 12 (the object surface of the projection optical system 12 and Image surface). In addition, the control unit CNT can relatively synchronously scan the mask stage 13 and the substrate stage 14 at a speed ratio corresponding to the projection magnification of the projection optical system 12 based on the measurement result of the measurement unit 20, thereby changing the pattern of the mask M Transfer to the substrate.

Next, the structure of the chamber 30 which accommodates the exposure part 10 is demonstrated. The chamber 30 can be configured as an air conditioning mechanism for adjusting the temperature of the environment (space) where the exposure unit 10 is arranged. For example, the chamber 30 may include a temperature regulator 31 for adjusting the temperature of gas (air), a filter box 32 for filtering fine foreign matter to form a uniform air flow of clean air, and for shielding the environment in which the exposure unit 10 is arranged from the outside. Open compartment 33.

The temperature regulator 31 includes, for example, a chemical filter 31a for removing organic or inorganic substances, a heater 31b, a blower 31c, and a temperature control unit 31d. The temperature control unit 31d controls the heater 31b so that the inside of the compartment 33 becomes a predetermined temperature, and controls the blower 31c so that the gas is supplied from the filter box 32 at a predetermined flow rate. In addition, the filter box 32 is provided above and on the side of the exposure part 10, and gas is supplied into the compartment 33 through a downflow and a side flow. By supplying the gas into the compartment 33 in this way, the influence of the gas supply into the compartment 33 on the measurement of the positions of the mask stage 13 and the substrate stage 14 by the measuring section 20 of the exposure section 10 can be reduced.

In the case of the present embodiment, the chamber 30 is an air-conditioning mechanism of a circulation system that circulates a temperature-adjusted and flow-adjusted gas inside the compartment 33 that houses the exposure unit 10. Specifically, the gas passing through the chemical filter 31a is adjusted in temperature by the heater 31b, and then adjusted in flow rate by the blower 31c, and is supplied from the filter box 32 into the compartment 33. The gas supplied into the compartment 33 is taken in again into the temperature regulator 31 from the intake port 34 and circulated. Here, in the chamber 30, the inside of the compartment 33 is always maintained at a positive pressure with respect to the outside to prevent the intrusion of fine foreign matter into the compartment 33. For this reason, about 10% of the circulating air volume is introduced from the outside air.口35 Import.

In addition, the chamber 30 includes an interface opening 36 for transferring the substrate W from the outside of the exposure apparatus 100 and a shutter 37 provided in the interface opening 36. The shutter 37 controls the opening and closing operations based on, for example, a substrate transfer signal from a robot arm that carries the substrate W in and out of the chamber 30.

[Configuration of the first supply unit and the second supply unit] In the exposure apparatus 100, with the recent miniaturization of circuit patterns, it is required to improve the positioning accuracy of the mask stage 13 and the substrate stage 14. In order to achieve this requirement, the measuring unit 20 needs to measure these stages with high accuracy. s position. However, for the laser interferometer that constitutes the measurement unit 20, the refractive index in the measurement optical path due to fluctuations in the temperature, pressure, humidity, etc. of the gas in the measurement optical path (sometimes referred to as "gas fluctuations") Variations will become the main cause of measurement errors. For example, the measurement unit 20 that measures the positions of the mask stage 13 and the substrate stage 14 requires a measurement accuracy (measurement error) of 30 nm or less. To achieve this measurement accuracy, the temperature change rate of the measurement light path needs to be set to 1 ppm /℃ below.

In addition, in recent years, the substrate W for liquid crystal panels has been increasing in size. As a result, in the exposure apparatus 100, the substrate stage 14 has increased in size, and the movement stroke of the substrate stage 14 has become longer. Therefore, the measurement light path length of the measurement section 20 also becomes longer, for example, to approximately 3000 mm. In this case, in order to achieve a measurement accuracy of 30 nm or less, it is necessary to suppress the temperature change of the measurement light path to 0.01° C. or less.

Therefore, in the exposure apparatus 100 of the present embodiment, for the optical path (measurement light path) of the measurement light ML emitted from the measurement section 20 (laser head 21), a first supply of gas whose flow rate and temperature are adjusted is provided. The supply unit 40 and the second supply unit 50. The first supply unit 40 and the second supply unit 50 are supplied with gas whose temperature has been adjusted by the temperature regulator 31, for example. Specifically, as shown in FIG. 1, the temperature regulator 31 is provided with an intake port 38 for taking in compressed gas from factory equipment and a delivery port 39 for sending out the temperature-controlled gas. The compressed gas taken into the temperature regulator 31 from the intake port 38 passes through the chemical filter 31 a, is temperature-adjusted by the heater 31 b, and then is sent out from the delivery port 39. The delivery port 39 communicates with the first supply unit 40 and the second supply unit 50, and the compressed gas sent from the delivery port 39 is supplied to the first supply unit 40 and the second supply unit 50. In addition, the compressed gas supplied from the factory equipment to the intake port 38 of the temperature regulator 31 may have a gas pressure (air pressure) of about 0.1 MPa to 0.8 MPa.

Next, the structure of the stage device to which the exposure apparatus 100 of this embodiment is applied is demonstrated. The stage device can be defined as a configuration including the measurement unit 20, the first supply unit 40, and the control unit CNT, for example, but can also be defined as a configuration including the second supply unit 50 in addition to this. FIG. 2 is a diagram showing the configuration of the stage device, showing that a first supply part 40 and a second supply are provided for the measurement light path of the measuring part 20 (laser head 21) for measuring the position of the substrate stage 14 Figure of an example of section 50. Hereinafter, an example in which the first supply unit 40 and the second supply unit 50 are provided for the measurement light path (the light path between the laser head 21 and the cylindrical mirror 24) for measuring the position of the substrate stage 14 will be described , But not limited to this. For example, as shown in FIG. 1, the first supply unit 40 may be provided in the same manner for the measurement light path (the light path between the beam splitter 22 and the cylindrical mirror 23) for measuring the position of the mask stage 13. And the second supply unit 50.

The first supply unit 40 may include, for example, a flow rate adjustment unit 41 (electric valve), a temperature adjustment unit 42 and a blow-out unit 43 to form a first direction along the optical path of the measurement light ML from the measurement unit 20 in the measurement light path. (Optical axis direction, for example, -X direction) The gas is supplied to the measurement optical path in a gas flow method. The flow rate adjustment unit 41 includes, for example, a mass flow controller, and under the control of the control unit CNT, adjusts the flow rate of the compressed gas supplied from the delivery port 39 of the temperature regulator 31 of the chamber 30 through the pipe 46a. The temperature adjustment unit 42 may include, for example, a heater, a cooling mechanism, or the like, and under the control of the control unit CNT, adjust the temperature of the gas supplied from the flow adjustment unit 41 via the pipe 46b. Here, in the example shown in FIG. 2, the temperature adjustment unit 42 is arranged on the downstream side of the flow rate adjustment unit 41, but it is not limited to this, and the flow rate adjustment unit 41 may be arranged on the downstream side of the temperature adjustment unit 42. In addition, the flow rate adjustment part 41 and the temperature adjustment part 42 are preferably provided in the vicinity of the blowing part 43, but they may be provided in arbitrary positions, for example, they may be provided in the inside of the temperature regulator 31.

The blowing section 43 uses the Broader effect to blow out the gas supplied from the temperature adjustment section 42 through the tube 46c to the measurement light path in such a manner that a gas flow toward the first direction along the measurement light path is formed . Specifically, the blowing part 43 may include a blowing port 44 and a guide member 45 as shown in FIG. 3. The air outlet 44 communicates with the temperature adjustment unit 42 and blows out the gas (indicated by arrow α) supplied from the temperature adjustment unit 42 via the tube 46c in a direction (for example, the -Z direction) crossing the measurement light path. The guide member 45 has a guide surface 45a for guiding the gas blown out from the blowing port 44 to a flow along the first direction (for example, the -X direction) along the measuring light path by using the Broader effect. According to the configuration of the guide member 45 as described above, the gas blown from the blowing port 44 can flow along the guide surface 45a by using the broad effect, and can be converted into a gas flow in the first direction along the measuring light path. In addition, when the gas is blown from the blowing portion 43, the gas (indicated by the arrow β) existing around the blowing portion 43 is attracted by the gas blowing from the blowing portion 43 by the Bernoulli effect. That is, the flow rate of the gas blown out from the blowing section 43 is increased several times to several tens of times and is supplied to the measurement light path.

The second supply unit 50 supplies gas to the measurement light path so as to form a gas flow in the second direction (for example, the -Z direction) crossing the measurement light path in the measurement light path. For example, the second supply unit 50 has a plurality of blowout ports arranged along the measuring light path (for example, the -X direction), and the compressed gas supplied from the delivery port 39 of the temperature regulator 31 of the chamber 30 through the pipe 51 is supplied to Blow out through the direction of the measurement light path (for example, -Z direction). In addition, in the case of the present embodiment, the second supply unit 50 may be configured to supply gas to a portion of the measurement light path that is closer to the measurement unit side (laser head 21 side) than the portion where the gas is supplied from the first supply unit 40 .

[Control of gas flow and temperature] In the configuration of the first supply unit 40 in this embodiment, the gas supplied from the first supply unit 40 to the measurement light path (blows out) collides with the substrate stage 14 (or the cylindrical mirror 24). Therefore, in the measurement light path around the substrate stage 14, the flow of the gas supplied from the first supply unit 40 changes. In this case, if the gas heated by the substrate stage 14 or the surrounding heat source is involved, the temperature, pressure, humidity, etc. of the gas will fluctuate in the measurement light path (hereinafter sometimes referred to as "gas fluctuation" ). Such gas fluctuations change the refractive index in the measurement light path, and thus become a main cause of measurement errors in the measurement unit 20. In addition, the fluctuation of such gas becomes more pronounced as the distance A between the substrate stage 14 and the blowing portion 43 (blower port 44) of the first supply portion 40 becomes closer, and therefore it is difficult to measure the substrate stage 14 with high accuracy. s position.

Therefore, the control unit CNT of the present embodiment controls the flow rate adjustment unit 41 of the first supply unit 40 so as to change from the first supply unit 40 to the measurement according to the position of the substrate stage 14 in the first direction along the measurement light path. The flow rate of the gas supplied (blowed out) by the light path. For example, the control unit CNT controls the flow rate adjustment unit 41 of the first supply unit 40 so that the shorter the distance between the substrate stage 14 and the first supply unit 40 (blowout unit 43) in the first direction along the measuring light path The smaller the flow rate of the gas supplied to the measurement optical path by the first supply unit 40 is.

Specifically, for a plurality of states where the positions of the substrate stage 14 in the first direction are different from each other, the measurement error of the measurement section 20 when gas is supplied from the first supply section 40 to the measurement light path is obtained in advance through experiments. The flow rate of the gas below the allowable value. As a result, information indicating the correspondence between the position of the substrate stage 14 in the first direction and the flow rate of gas to be supplied from the first supply unit 40 to the measurement optical path (hereinafter sometimes referred to as "first information") can be obtained . The control unit CNT determines the flow rate of the gas to be supplied from the first supply unit 40 to the measurement light path based on the first information acquired in advance and the position information of the substrate stage 14, and controls the first supply unit 40 based on the determined flow rate of the gas The flow adjustment unit 41. In the case of the present embodiment, as shown in FIG. 2, the control unit CNT uses the measurement result of the measurement unit 20 as information indicating the position of the substrate stage 14. However, it is not limited to this, and a slave substrate stage 14 may be used The signal value obtained by the substrate drive mechanism 14b.

In addition, if the flow rate of the gas supplied from the first supply unit 40 to the measurement light path is changed, the temperature of the gas will change due to adiabatic expansion. For example, as the flow rate of the gas supplied from the first supply unit 40 to the measurement light path decreases, the temperature of the gas decreases due to adiabatic expansion. Therefore, the control unit CNT of this embodiment can control the temperature adjustment unit 42 of the first supply unit 40 so as to control the temperature change of the gas due to the change in the flow rate of the gas supplied from the first supply unit 40 to the measurement light path. make up.

Specifically, the temperature adjustment of the temperature adjustment unit 42 is not performed. Regarding a plurality of states in which the flow rates of the gas supplied from the blowing portion 43 (blowout port 44) of the first supply portion 40 are different from each other, they are measured in advance by experiments or the like. The temperature of the gas supplied by the section 43. In addition, for each state, the amount of heating (or the amount of cooling) required to compensate for the difference between the measured value of the temperature of the gas blown from the blowing section 43 and the reference temperature is calculated. The reference temperature can be arbitrarily set, and for example, can be set as the set temperature of the temperature regulator 31 of the chamber 30. Thereby, information (hereinafter, sometimes referred to as “second information”) indicating the correspondence relationship between the flow rate of the gas supplied from the first supply unit 40 to the measurement light path and the amount of heating in the temperature adjustment unit 42 can be obtained. The control unit CNT determines the heating amount of the gas in the temperature adjustment unit 42 based on the second information acquired in advance and the flow rate of the gas adjusted by the flow adjustment unit 41, and controls the temperature adjustment unit 42 based on the determined heating amount.

Here, a specific example of the configuration of the control unit CNT for performing the above-mentioned control will be described. Assume a case where an electric valve is used as the flow rate adjustment unit 41 and a heater is used as the temperature adjustment unit 42. In this case, the control unit CNT has a pulse controller for controlling the opening degree of the electric valve, and controls the opening degree of the electric valve by driving the pulse motor mounted on the electric valve, thereby controlling the measurement from the first supply unit 40 The flow rate of the gas supplied by the optical path. In addition, the control unit CNT has a solid-state relay circuit, and can control the temperature of the gas supplied from the first supply unit 40 to the measurement light path by controlling the switching of the heater at high speed.

Next, a control example of the first supply unit 40 according to the position of the substrate stage 14 will be described with reference to FIG. 4. FIG. 4 is a diagram showing a control example of the first supply unit 40 according to the position of the substrate stage 14. 4(a) shows the distance A between the substrate stage 14 and the blowing portion 43 of the first supply unit 40, FIG. 4(b) shows the flow rate of the gas to be adjusted by the flow adjustment unit 41, and FIG. 4( c) shows the amount of heating to be given by the temperature adjustment unit 42.

The section 101 is a section in which the substrate stage 14 (cylindrical mirror 24) moves so as to be away from the blowing section 43 of the first supply section 40 and the distance A increases. In this section 101, the control unit CNT controls the flow adjustment unit 41 so that as the distance A increases, the flow rate of the gas supplied from the first supply unit 40 to the measurement light path increases, and controls the temperature adjustment unit 42 to heat the gas The amount increases. In addition, the section 102 is a section in which the distance A is kept constant at the maximum. In this section 102, the control unit CNT controls the flow adjustment unit 41 and the temperature adjustment unit 42 so that the flow rate of the gas and the heating amount of the gas are constant.

The section 103 is a section in which the substrate stage 14 moves so as to approach the blowing section 43 of the first supply section 40 and the distance A becomes smaller. In this section 103, the control unit CNT controls the flow adjustment unit 41 so that the flow rate of the gas supplied from the first supply unit 40 to the measurement light path decreases as the distance A decreases, and controls the temperature adjustment unit 42 to heat the gas The amount is reduced. Here, the control unit CNT may stop the supply of gas from the first supply unit 40 to the measurement light path when the substrate stage 14 is arranged below the blowing unit 43 of the first supply unit 40.

[Example of arrangement of the first supply unit and the second supply unit] Next, an arrangement example of the first supply unit 40 and the second supply unit 50 in the exposure unit 10 will be described. FIG. 5 is a diagram showing an example of arrangement of the first supply unit 40 and the second supply unit 50 in the exposure unit 10. The first supply part 40 (the blowing part 43) and the second supply part 50 are arranged under the structure 17 as shown in FIG. 5. The structure 17 is a member for covering the substrate W held on the substrate stage 14 when the substrate stage 14 is arranged on the most +X direction side, and may be a member constituting a part of the projection optical system 12, for example. In addition, a detection system 18 is provided between the first supply unit 40 (blowout unit 43) and the projection optical system 12 in the optical axis direction of the measurement light ML. The detection system 18 may include a so-called off-axis observer that detects marks formed on the substrate W, for example.

As described above, the exposure apparatus 100 of this embodiment controls the flow rate adjustment unit 41 of the first supply unit 40 so as to change the gas supplied (blowed) from the first supply unit 40 to the measurement light path according to the position of the substrate stage 14. Of traffic. In addition, the exposure apparatus 100 can control the temperature adjustment unit 42 of the first supply unit 40 so as to compensate for the temperature change of the gas due to the change in the flow rate of the gas supplied from the first supply unit 40 to the measurement light path. As a result, in the exposure apparatus 100, it is possible to reduce the fluctuation of the gas in the measurement light path caused by the change in the distance A between the substrate stage 14 and the first supply part 40 (blowing part 43), and it is possible to measure with high accuracy. The position of the substrate stage 14.

<Second Embodiment> The exposure apparatus of the second embodiment according to the present invention will be described. The exposure apparatus of this embodiment basically inherits the configuration of the exposure apparatus 100 of the first embodiment, but is different in that a plurality of first supply parts 40 are provided. In this embodiment, two first supply parts 40a and 40b for supplying gas are provided at positions in the measurement light path that are different from each other in the first direction along the measurement light path. 6 is a diagram showing the configuration of the stage device of the present embodiment, showing the installation of the first supply unit with respect to the measuring light path of the measuring unit 20 (laser head 21) for measuring the position of the substrate stage 14 Figures 40a, 40b and examples of the second supply unit 50. As described in the first embodiment, the configuration of each of the first supply portions 40a and 40b may include the flow rate adjustment portion 41, the temperature adjustment portion 42, and the blowing portion 43, respectively. In addition, in the following, in order to make the description easy to understand, the first supply unit 40a on the right side in FIG. 6 is referred to as "right supply unit 40a", and the first supply unit 40b on the left side is referred to as "left supply unit 40b".

Next, a control example of the right supply part 40a and the left supply part 40b according to the position of the substrate stage 14 will be described with reference to FIG. 7. FIG. 7 is a diagram showing a control example of the right supply unit 40 a and the left supply unit 40 b according to the position of the substrate stage 14. Fig. 7 (a) shows the distance A between the substrate stage 14 and the blowing portion 43a of the right supply portion 40a, and the distance B between the substrate stage 14 and the blowing portion 43b of the left supply portion 40b. 7(b) shows the flow rate of the gas that should be adjusted by the flow rate adjustment section 41a of the right supply section 40a, and FIG. 7(c) shows the flow rate of the gas that should be adjusted by the flow rate adjustment section 41b of the left supply section 40b The flow of gas.

Section 104 is the section where the substrate stage 14 (cylindrical mirror 24) moves away from the right supply portion 40a (blowout portion 43a), and the distance A becomes larger, but has not yet reached the left supply portion 40b (blowout portion 43b). The measurement light path is configured below. In this section 104, the control unit CNT controls the flow adjustment unit 41a for the right supply unit 40a so as to increase the flow rate of the gas supplied to the measurement light path as the distance A increases. On the other hand, the flow adjustment unit 41b is controlled for the left supply unit 40b so as to stop the gas supply to the measurement light path in advance.

The section 105 is the section where the substrate stage 14 is separated from the right supply section 40a (blowout section 43a) and the left supply section 40b (blowout section 43b) in a state where the measuring light path is arranged under the blowing section 43b of the left supply section 40b ), the distance A and the distance B become larger. In this section 105, the distance of the measurement light path (the measurement light path between the blowing portion 43a and the blowing portion 43b) through which the right supply portion 40a is responsible for gas supply does not change. Therefore, the control unit CNT controls the flow rate adjustment unit 41a with respect to the right supply unit 40a so that the flow rate of the gas supplied to the measurement light path is constant. On the other hand, the flow rate adjusting portion 41b is controlled for the left supply portion 40b so as to increase the flow rate of the gas supplied to the measurement light path as the distance B increases.

The section 106 is a section in which the distance A and the distance B are kept constant and maximum. In this section 106, the control unit CNT respectively controls the flow adjustment unit 41a and the flow adjustment unit 41b for the right supply unit 40a and the left supply unit 40b so that the flow rate of the gas supplied to the measurement light path is constant.

The section 107 is the section where the substrate stage 14 approaches the right supply section 40a (blowout section 43a) and the left supply section 40b (blowout section 43b) in a state where the measuring light path is arranged under the blowing section 43b of the left supply section 40b. ), the distance A and the distance B become smaller. In this section 107, the control unit CNT controls the flow rate adjustment unit 41a for the right supply unit 40a so that the flow rate of the gas supplied to the measurement light path becomes constant. On the other hand, the flow rate adjusting portion 41b is controlled for the left supply portion 40b so as to decrease the flow rate of the gas supplied to the measurement light path as the distance B becomes smaller.

The section 108 is a section where the substrate stage 14 moves closer to the right supply section 40a (blowout section 43a) and the distance A becomes smaller when the measurement light path is not arranged under the left supply section 40b (blowout section 43b) . In this section 108, the control unit CNT controls the flow adjustment unit 41a for the right supply unit 40a so as to decrease the flow rate of the gas supplied to the measurement light path as the distance A decreases. On the other hand, the flow adjustment unit 41b is controlled for the left supply unit 40b so as to stop the gas supply to the measurement light path in advance.

As described above, even when a plurality of first supply units 40 are provided, the flow rate of the gas supplied from each first supply unit 40 to the measurement light path is changed according to the position of the substrate stage 14. If a plurality of first supply parts 40 are provided in this way, even when the movement stroke of the substrate stage 14 is large, the fluctuation of the gas in the measurement light path can be reduced, and the position of the substrate stage 14 can be measured with high accuracy. . Here, in this embodiment, as described in the first embodiment, the temperature adjustment unit 42 of each first supply unit 40 may be controlled so as to control the temperature adjustment unit 42 caused by the change in the flow rate of the gas supplied to the measurement light path. The temperature change of the gas is compensated.

<The third embodiment> The exposure apparatus according to the third embodiment of the present invention will be described. The exposure apparatus of this embodiment basically inherits the structure of the exposure apparatus 100 of the first embodiment, but the direction in which the gas is blown from the blowing portion 43 (blower port 44) of the first supply portion 40 is relative to the optical axis of the measuring light ML The difference is that the direction is not vertical. As shown in FIG. 8, even when the air flow of the gas blown out from the blowing part 43 and formed in the measuring light path is not parallel to the first direction (for example, the -X direction) along the measuring light path, it is blown out from the blowing part 43 The gas will also collide with the substrate stage 14 (cylindrical mirror 24). Specifically, the gas flow F of the gas blown from the blowing portion 43 is composed of a component Fx perpendicular to the first direction and a component Fy parallel to the first direction. The component Fy collides with the substrate stage 14 and generates a fluctuation change of the gas in the measurement light path. Therefore, in this embodiment, as described in the first embodiment, by controlling the gas flow rate according to the position of the substrate stage 14, the fluctuation of the gas in the measurement optical path can be reduced, and the high accuracy can be achieved. The position of the substrate stage 14 is measured ground.

<Implementation of article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as micro devices such as semiconductor devices or elements having a fine structure, for example. The article manufacturing method of this embodiment includes: a forming process of forming a pattern on the substrate using the above-mentioned photolithography apparatus (exposure device) for the photosensitive agent applied to the substrate; and a processing process of forming a pattern on the substrate in the forming process For processing. Furthermore, the manufacturing method includes other well-known procedures (oxidation, film formation, evaporation, doping, planarization, etching, photoresist stripping, cutting, bonding, packaging, etc.). The article manufacturing method of the present embodiment is more advantageous in at least one of the performance, quality, productivity, and production cost of the article than the conventional method.

The present invention is not limited to the above-mentioned embodiments, and various changes and modifications can be made without departing from the concept and scope of the invention. Therefore, in order to disclose the scope of the invention, the scope of patent application is attached.

10: Exposure Department 11: Illumination optical system 12: Projection optical system 13: Mask stage 14: substrate stage 20: Measurement Department 30: Chamber 40: The first supply department 50: The second supply department

[Fig. 1] is an overall schematic diagram of the exposure apparatus. Fig. 2 is a diagram showing a configuration example of the stage device of the first embodiment. [Fig. 3] Fig. 3 is a diagram showing a configuration example of the blow-out portion of the first supply portion. [Fig. 4] Fig. 4 is a diagram showing a control example of the first supply unit according to the position of the substrate stage in the first embodiment. Fig. 5 is a diagram showing an example of the arrangement of the first supply unit and the second supply unit. [Fig. 6] Fig. 6 is a diagram showing the configuration of the stage device of the second embodiment. [Fig. 7] Fig. 7 is a diagram showing a control example of the first supply unit according to the position of the substrate stage in the second embodiment. [Fig. 8] Fig. 8 is a diagram showing a modified example of the blow-out part of the first supply part.

10: Exposure Department

11: Illumination optical system

11a: light source

12: Projection optical system

13: Mask stage

13a: Mask fixture

13b: Mask drive mechanism

14: substrate stage

14a: Substrate fixture

14b: Substrate drive mechanism

15: Observation optical system

16: Fixing

20: Measurement Department

21: Laser head

22: Spectroscope

23: Cylindrical mirror

24: Cylindrical mirror

25: mirror

30: Chamber

31a: Chemical filter

31b: heater

31c: blower

31d: Temperature Control Department

32: filter box

33: compartment

34: Take the entrance

35: Outside air inlet

36: Interface opening

37: Ram

38: Take the entrance

39: Send out

40: The first supply department

50: The second supply department

100: Exposure device

M: Mask

W: substrate

CNT: Control Department

ML: measuring light

Claims (11)

A carrier device includes: The carrier, which is movable; A measuring section that irradiates light on the carrier to measure the position of the carrier; A supply part that supplies gas to the light path of the light so as to form a gas flow in the light path toward the direction along the light path; and The control unit controls the supply unit so as to change the flow rate of the gas supplied from the supply unit to the optical path in accordance with the position of the stage in the direction. Such as the carrier device of claim 1, in which, The aforementioned supply part has a blowing part that blows out gas, The control section controls the supply section so as to change the flow rate of the gas blown from the blowing section in accordance with the position of the stage in the direction. The stage device of claim 1, wherein the control section controls the supply section so that the shorter the distance between the stage and the supply section in the direction, the flow rate of the gas supplied from the supply section to the optical path Less. The stage device of claim 1, wherein the control section controls the supply section so as to change the flow rate of the gas supplied from the supply section to the optical path based on the measurement result of the position of the stage obtained by the measurement section . The stage device according to claim 1, wherein the control section controls the supply section so as to stop the supply of gas from the supply section to the optical path according to the position of the stage in the direction. Such as the carrier device of claim 1, in which, The supply unit includes a temperature adjustment unit that adjusts the temperature of the gas supplied to the light path, The control unit controls the temperature adjustment unit so as to compensate for the temperature change of the gas due to the change in the flow rate of the gas supplied from the supply unit to the optical path. The stage device according to claim 1, which includes a plurality of the aforementioned supply parts, and the plurality of the aforementioned supply parts supply gas at positions in the optical path different from each other in the aforementioned directions. The stage device of claim 1, wherein the stage device further includes a second supply portion that supplies gas to the optical path so that the gas is formed in the optical path in a direction crossing the optical path Airflow. The stage device according to claim 8, wherein the second supply unit supplies gas to a portion of the optical path that is closer to the measuring unit than a portion where the gas is supplied from the supply unit. A photolithography device, which forms a pattern on a substrate, The aforementioned photolithography apparatus includes a stage device having the stage device according to any one of claims 1 to 9 that can move while holding the aforementioned substrate. An article manufacturing method, including: The formation procedure of patterning on the substrate using the lithography apparatus as in claim 10, and A processing procedure for processing the aforementioned substrate with a pattern formed in the aforementioned formation procedure, The article is manufactured from the aforementioned substrate processed in the aforementioned processing procedure.

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