CN111819033A - Polishing pad and polishing method using same - Google Patents
Polishing pad and polishing method using same Download PDFInfo
- Publication number
- CN111819033A CN111819033A CN201980017337.4A CN201980017337A CN111819033A CN 111819033 A CN111819033 A CN 111819033A CN 201980017337 A CN201980017337 A CN 201980017337A CN 111819033 A CN111819033 A CN 111819033A
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- Prior art keywords
- polishing
- polishing pad
- adsorption layer
- platen
- layer
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- 125000003118 aryl group Chemical group 0.000 description 1
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- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- 125000003944 tolyl group Chemical group 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a polishing pad, which consists of a base material, and an adsorption layer and a polishing layer which are formed on the base material. The adsorption layer contains a composition crosslinked with at least 1 silicone selected from silicones comprising linear polyorganosiloxanes having vinyl groups only at both ends. The present invention is characterized in that the adsorption layer is provided with an annular shield member along the outer periphery of the polishing pad. The polishing pad is used for adsorbing and fixing the adsorption layer to the platen during polishing operation and supplying polishing slurry to the polishing layer. In the present invention, the annular shield member can suppress intrusion of the polishing slurry into the interface between the adsorption layer and the platen.
Description
Technical Field
The present invention relates to a polishing pad used in a polishing step of a member to be polished for semiconductor components, electronic components, and the like. In particular, it relates to a polishing pad which can efficiently perform a polishing pad replacement operation in polishing a member to be polished such as a semiconductor wafer and can prevent the polishing pad from shifting and peeling during the polishing operation.
Background
In the production of semiconductor components and electronic components such as semiconductor wafers, glass substrates for displays, and substrates for hard disks, a polishing step is included for planarizing or mirroring the surface of the substrates and the like. The grinding step is carried out by the following method: the polishing pad is fixed to a platen of a polishing apparatus, and a member to be polished and the polishing pad are slid under pressure while supplying a polishing slurry to a surface of the polishing layer of the polishing pad.
As for the method of fixing the polishing pad to the platen, a method using an adhesive material such as an adhesive tape has been mainly used in the past, but in this fixing method, the procedure of replacing and fixing the polishing pad is complicated, and the work efficiency in the polishing step is greatly reduced. In order to solve the problem of fixing the polishing pad, a polishing pad has been developed which can be easily fixed and replaced (patent documents 1 and 2).
[ Prior art documents ]
[ patent document ]
Patent document 1: japanese Utility model registration No. 3166396
Patent document 2: japanese patent No. 5765858.
The appearance of the polishing pad with an adsorption layer is shown in fig. 6. The polishing pad is provided with an adsorption layer made of a predetermined silicone compound having an adsorption action on the back surface side of a base material supporting the polishing layer. The silicone compound constituting the adsorption layer has an adsorption effect on a material such as glass or metal, and the holding power thereof is also preferable. The retention force by this adsorption is observed to have a characteristic that the shear force (horizontal fixing strength) is high but the peel force (vertical fixing strength) is low. This feature is useful for securing the polishing pad to the platen. This is because the polishing pad is continuously subjected to a horizontal stress during the polishing operation, and therefore a high holding force is required in terms of shearing force. The vertical holding force is not necessarily required to be large because the polishing pad is pressed against the platen. Further, the adsorption effect of the adsorption layer made of the silicone compound is uniform in the surface of the polishing pad, and uniform holding force can be exerted from the center portion to the end portion. Therefore, stable polishing work can be expected.
In addition, the polishing pad can be smoothly fixed on the platform and can be efficiently replaced. As described above, since the adsorption layer of the polishing pad has a lower peeling force than a shearing force, the polishing pad can be fixed by lightly pressing the polishing pad against the platen in the vertical direction, and can be easily attached and detached. Therefore, the polishing pad proposed by the applicant of the present application is also useful in terms of improving the efficiency of polishing work.
Disclosure of Invention
[ problems to be solved by the invention ]
As described above, the polishing pad provided with a predetermined adsorption layer proposed by the applicant of the present application is excellent in convenience of replacement work and also excellent in fixing ability to the platen. However, according to the studies of the present inventors, it was confirmed that even when such a useful polishing pad is used, the polishing pad may be displaced or partially peeled off due to the polishing work, although it is rare. The polishing pad is not necessarily deviated or peeled because the adsorption layer is deteriorated due to the polishing time or the frequency of replacing the polishing pad. Further, it is not always a problem, and the polishing work can be performed without any problem even in almost all polishing environments and conditions. However, in order to make the polishing pad more popular, even if there is a slight possibility, the problem of peeling or the like should be eliminated.
The present invention has been made in view of the above-described background, and provides a polishing pad having an adsorption layer made of a predetermined silicone composition, which can prevent the polishing pad from peeling off from a surface plate. Also disclosed is a polishing method using the polishing pad.
[ means for solving problems ]
The present inventors have studied, for the above-mentioned purpose, factors related to the occurrence of peeling from the surface plate during polishing work, for a polishing pad having a predetermined adsorption layer. As a result, it was found that the polishing slurry may intrude into the interface between the adsorption layer of the polishing pad and the platen, and may cause peeling or the like. The polishing slurry is a suspension having a basic composition of "a dispersion of abrasive grains containing colloidal silica, alumina, cerium oxide, diamond, or the like in a solvent". As a result of studies by the present inventors, it has been found that the invasion of the polishing slurry into the interface between the polishing pad and the platen may be increased depending on the composition and components of the polishing slurry. In particular, it has been found that a polishing slurry having a low viscosity by component adjustment has high invasion into the interface.
The low viscosity polishing slurry, combined with the influence of capillary phenomenon caused by the fine gap between the polishing pad and the platen, is easy to intrude into the interface. The state where the slurry is accumulated in the interface is not preferable for the adsorption layer made of the silicone composition, and this causes a decrease in adsorption force. As the suction force is reduced, the polishing pad is peeled or displaced from the platen.
However, even if the main cause of the decrease in the ability of the polishing pad to adsorb a layer is polishing slurry, it is difficult to easily change the composition and structure of the polishing slurry. The components and the structure of the abrasive grains, the solvent and the like constituting the polishing slurry are generally optimized in accordance with the material of the member to be polished, the required polishing accuracy and the like. Even if the polishing slurry may affect a particular polishing pad, implementation of changes that affect polishing accuracy, etc. cannot be easily allowed.
The present inventors have solved the problem of peeling from the surface plate by improving the structure of the polishing pad. Specifically, in order to suppress intrusion of the polishing slurry into the interface between the adsorption layer and the platen of the polishing pad, a shield member is disposed on the surface of the adsorption layer that is the back surface of the polishing pad.
That is, the present invention is a polishing pad comprising a base material, an adsorption layer formed on one surface of the base material, and a polishing layer formed on the other surface of the base material; wherein, the polishing pad is used for adsorbing and fixing the adsorption layer on the platform and supplying polishing slurry to the polishing layer during polishing operation; the adsorption layer comprises a composition crosslinked by at least 1 silicone selected from the following silicones: a silicone comprising a linear polyorganosiloxane having a vinyl group only at both ends, a silicone comprising a linear polyorganosiloxane having a vinyl group at both ends and at a side chain, a silicone comprising a branched polyorganosiloxane having a vinyl group only at the ends, and a silicone comprising a branched polyorganosiloxane having a vinyl group at the ends and at a side chain; in order to prevent the slurry from entering the interface between the adsorption layer and the platen, the adsorption layer is provided with an annular shield member along the outer periphery of the polishing pad.
The polishing pad of the present invention is described in detail below. As described above, the present invention is basically configured by a combination of a base material and polishing layers and adsorption layers formed on the front and back surfaces of the base material, as in the conventional techniques (patent documents 1 and 2). And wherein the surface of the adsorption layer is provided with an annular shielding member along the outer periphery of the polishing pad.
Fig. 1 is a diagram showing a specific example of a state in which a polishing pad having an annular shield member of the present invention is fixed to a platen. As can be seen from FIG. 1, the polishing pad of the present invention has a diameter larger than the outer diameter of the platen. In addition, in the polishing pad, a ring-shaped shield member having a constant width and thickness is bonded to the outer edge of the adsorption layer as the back surface. In this example, the inner diameter of the annular shield member is substantially equal to the outer diameter of the stage.
In addition, during the polishing operation, the polishing pad is rotated while supplying the polishing slurry onto the polishing layer. As shown in fig. 2, the polishing slurry supplied to the surface of the polishing layer spreads and wets the outer peripheral side at a high speed by centrifugal force and reaches the side surface of the polishing pad. In this case, in the polishing pad of the present invention, the shield member bonded to the adsorption layer blocks the polishing slurry to prevent the slurry from being sucked into the back surface side of the polishing pad. In addition, since the polishing pad rotates at a high speed during the polishing operation, the blocked polishing slurry is scattered outward from the annular shield member. Accordingly, the polishing slurry cannot enter the interface between the adsorption layer and the platen, and the adhesion state of the adsorption layer is maintained.
In this way, the present invention is characterized in that the diameter of the polishing pad is set to be slightly larger than the platen, and the annular shield member is provided on the adsorption layer which becomes the wide portion. The polishing pad of the present invention and the polishing method using the polishing pad will be described in more detail below. First, each structure of the polishing pad will be described.
(A) Constitution of polishing pad of the invention
The polishing pad of the present invention is composed of a base material, a polishing layer, an adsorption layer, and an annular shield member.
(A-1) base Material
The base material is a member for supporting the polishing layer and the adsorption layer, and is a member for ensuring the operability of the polishing pad. The substrate is a circular sheet-like member made of a thin organic material. The base material is preferably made of a resin material having a breaking strength of 210 to 290MPa and an elongation at break of 80 to 130%. More preferably, the breaking strength is 210 to 240MPa and the breaking elongation is 110 to 130%. Further, the tensile strength is a value measured at the time of drying.
The material constituting the base material is specifically a resin such as polyester, polyethylene, polystyrene, polypropylene, nylon, urethane (urethane), polyvinylidene chloride (polyvinylidene chloride), or polyvinyl chloride. Polyester resin materials such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are more preferable, and PET is particularly preferable. The substrate may be a single layer or may be a multilayer structure formed of a plurality of resins.
The shape and size of the substrate, i.e., the polishing pad, can be circular or square. As described above, the polishing pad of the present invention is adjusted in size so that the diameter is larger than the diameter of the platen. As described later, more preferably, the diameter of the stage is 10mm to 50mm larger. The size of the surface plate can be selected to have any outer diameter according to the size of the material to be polished and the number of simultaneous polishing operations. The diameter (maximum diameter) of the polishing pad is often set in the range of 100mm to 2000 mm.
(A-2) polishing layer
The polishing layer is a layer for polishing a member to be polished, as the name indicates. The polishing layer appropriately holds the supplied polishing slurry to polish the surface of the member to be polished. The polishing layer of the present invention can be applied to polishing pads conventionally used for general polishing pads. For example, a nonwoven fabric or a foam molded article made of nylon, polyurethane, polyethylene terephthalate, or the like can be suitably used. The shape of the surface (polishing surface) is not limited to a flat shape, and grooves or the like for holding the polishing agent may be formed as appropriate. The thickness of the polishing cloth as the polishing layer is preferably 0.5 to 3 mm.
The polishing layer is preferably firmly bonded to the substrate. The polishing layer and the substrate may be bonded by a known method, and preferably, they are bonded by, for example, a bonding agent or an adhesive.
(A-3) adsorption layer
The adsorption layer fixes the polishing pad to the member of the platen by adsorption derived from the constituent material thereof. As described above, the adsorption layer is made of a silicone composition, and is basically the same as that used in the conventional polishing pads (patent documents 1 and 2) proposed by the present inventors. That is, the silicone composition constituting the adsorption layer is a composition crosslinked by at least 1 silicone selected from the following silicones: a silicone including a linear polyorganosiloxane having a vinyl group only at both ends, a silicone including a linear polyorganosiloxane having a vinyl group at both ends and a side chain, a silicone including a branched polyorganosiloxane having a vinyl group only at the ends, and a silicone including a branched polyorganosiloxane having a vinyl group at the ends and a side chain.
Specific examples of the silicone include compounds of formula 1 as examples of linear polyorganosiloxanes. Further, compounds such as those of formula 2 are exemplified as branched polyorganosiloxanes.
[ solution 1]
(wherein R represents an organic group and n represents an integer.)
[ solution 2]
(wherein R represents an organic group, and m and n represent an integer.)
Specific examples of the substituent (R) in the formula 1 and the formula 2 include: alkyl groups such as methyl, ethyl and propyl groups, aryl groups such as phenyl and tolyl groups, or 1-valent hydrocarbon groups other than the same or different unsubstituted or substituted aliphatic unsaturated groups in which some or all of the hydrogen atoms bonded to the carbon atoms of these groups are substituted with halogen atoms, cyano groups, or the like. More preferably at least 50 mole% thereof is methyl. The substituents may be of different species or of the same species. In addition, the polysiloxane can be single or a mixture of more than 2.
The silicone constituting the adsorption layer has a number average molecular weight of 30000 to 100000, and has an appropriate adsorption effect. However, when the surface roughness is adjusted, the number average molecular weight of the silicone used and the firing temperature in the production stage have an influence. In order to easily exhibit appropriate surface roughness, the number average molecular weight of the silicone is more preferably 30000 to 60000.
The thickness of the adsorption layer is more preferably 20 to 50 μm. Further, the thickness of the base material is more preferably 50 to 200 μm. The substrate and the absorbent layer are preferably in intimate contact.
The adsorption layer can be formed by applying a coating liquid containing the silicone component to a substrate and baking the coating liquid. The polyorganosiloxane is crosslinked by firing, and the adsorption layer is formed in a state of being in close contact with the substrate. The coating liquid used contains the above-mentioned linear or branched polyorganosiloxane compound and a crosslinking agent. The crosslinking agent may be a well-known one, and for example, organohydrogenpolysiloxane may be mentioned. The organohydrogenpolysiloxane has at least 3 hydrogen atoms bonded to silicon atoms in 1 molecule, and practically, it is more preferable to set the organohydrogenpolysiloxane having 2 ≡ SiH bonds in the molecule to 50% by weight of the total amount, and set the remaining portion to contain at least 3 SiH bonds in the molecule. The coating liquid may also contain a platinum-based catalyst used in the crosslinking reaction. The coating liquid may be any of a solvent-free type, a solvent type, and an emulsion type. The baking after the coating liquid is applied is preferably carried out at 120 to 180 ℃ for 60 to 150 seconds.
(A-4) annular Shield Member
As described above, the polishing pad of the present invention is characterized in that the surface of the adsorption layer is provided with the annular shield member along the outer periphery of the polishing pad. The shielding member is used for blocking the supplied polishing slurry in the polishing operation at the outer peripheral part of the polishing pad, so that the polishing slurry can not invade the interface between the adsorption layer and the platform.
The shielding member has a ring shape with a fixed width and thickness. The cross-sectional shape in the vertical direction is substantially rectangular (fig. 3 (a)), but may be a shape chamfered on one side or both sides of the lower end portion (fig. 3 (b) to (d)). The inclination is formed by chamfering, so that the liquid discharge of the polishing slurry from the shield member becomes good. The chamfer of the lower end portion of the shield member may be linearly inclined (tapered) (portions (b) and (d) in fig. 3) or may be curved (curved) (portion (c) in fig. 3). In the cross-sectional shape, one end portion of the outer side or the inner side (the plateau side) may be chamfered, or both end portions may be chamfered.
The width of the annular shield member is preferably 5mm or more. This is because a certain degree of width is required in order to block the polishing slurry from reaching the platen. Furthermore, the inner diameter of the annular shield member must be larger than the outer diameter of the platform. Since the polishing pad is used with the adsorption layer in close contact with the platen, the width of the annular shield member must be set to be equal to or less than the difference between the radius of the polishing pad and the radius of the platen. As described later, the difference between the diameter of the polishing pad and the half diameter of the platen is preferably 50mm or less, and the width of the annular shield member is preferably 25mm or less. Further, the inner surface of the annular shield member may be in close contact with the side surface of the stage. Further, instead of the close contact, a gap may be formed between the inner surface of the annular shield member and the side surface of the stage.
The thickness (height) of the annular shield member is preferably 10mm to 50 mm. This is because an appropriate height is required to block the polishing slurry from reaching the platen.
Next, the constituent material of the annular shield member will be described. The annular shield member of the present invention is used for blocking the polishing slurry spreading on the surface of the polishing surface from reaching the platen on the back side of the polishing pad. In view of this function, a material having liquid absorption properties may be used as a material of the shielding member. By absorbing the polishing slurry by the annular shield member having water absorbability, the polishing slurry can be effectively prevented from reaching the platen.
However, if the water absorption of the shielding member is too high, the slurry oozing from the shielding member in an excessively wet state may be sucked into the gap between the lands. Further, if a large amount of polishing slurry is absorbed, the weight of the annular shield member increases, and this may affect the rotation state of the polishing pad. Therefore, when the annular shielding member has water absorption, it is required to have appropriate water absorption. Specifically, the mass increase rate (water absorption rate for 1 hour) of the shield member after immersion in water at a temperature of 20 ℃ for 1 hour is preferably 60% by weight or less.
However, the water absorbing property is not essential for the annular shielding member. This is because the shape and size of the shield member can be appropriately set as described above, so that the polishing slurry can be effectively scattered and the object can be achieved. In consideration of the increase in mass due to the absorption of the polishing slurry, it is also preferable that the shielding member does not have water absorption in some cases. Therefore, the annular shielding member may be made of a material having no water absorption property or a material having low water absorption property. In this case, the 1-hour water absorption of the shielding member may be set to 0% to 1% or less.
As a material constituting the annular shield member, cellulose, rubber (butadiene rubber, neoprene, etc.), vinyl resin (polyvinyl alcohol (PVA), Ethylene Vinyl Acetate (EVA), vinyl chloride (PVC), etc.), styrene resin (polystyrene (PS), etc.), Polycarbonate (PC), fluororesin (Teflon (registered trademark): PTFE, etc.), Polyurethane (PU) may be used. A shielding member made of these materials and having a morphological structure of a fiber, a nonwoven fabric, a foam, a porous body, or a bulk (dense body) can be used.
The annular shield member is preferably firmly bonded to the adsorption layer. This is because the polishing slurry may cause peeling of the shield member when it enters the interface between the annular shield member and the adsorption layer. Therefore, as in the case of bonding the polishing layer to the base material or bonding the base material to the adsorption layer, it is preferable to bond the shielding member to the adsorption layer with an adhesive or a bonding material.
Alternatively, an adsorption layer made of the same silicone composition as the adsorption layer may be formed on the surface of the shield member, and bonded to the adsorption layer of the polishing pad. The silicone composition used in the present invention exerts a strong bonding force between the same materials. In this case, the joining can be performed firmly not only in the horizontal direction but also in the vertical direction. If the adsorption layers are bonded to each other, the penetration of the polishing slurry does not occur, and the separation of the shield member can be prevented.
B. Polishing method using the polishing pad of the present invention
Next, a polishing method using the polishing pad of the present invention will be described. The basic steps of the polishing method of the present invention are common to those of a conventional polishing pad having an adsorption layer. That is, the polishing pad is fixed to the platen by suction, and the polishing operation is performed by rotating the polishing pad while supplying the polishing slurry and pressing the member to be polished against the polishing pad. The polishing pad is placed on the platen, and the polishing pad is pressed toward the platen from the polishing layer side, whereby the polishing pad is fixed. In this case, the adsorption action of the adsorption layer can be exerted by pressing the surface of the polishing layer while lightly stroking the surface of the polishing layer without strictly pressing the entire surface with a uniform force.
The polishing method of the present invention is characterized by selecting the size of the polishing pad to be used. In the present invention, a polishing pad having a diameter larger than the diameter (outer diameter) of the platen is used. In the polishing pad of the present invention, since the annular shield member along the outer periphery of the polishing pad is bonded to the adsorption layer, the diameter of the polishing pad must be equal to or longer than the width of the polishing pad. The difference between the diameter of the polishing pad and the diameter of the platen is preferably 10mm to 50 mm. This is set in consideration of a more preferable value (5mm) of the width of the shielding member. If the polishing pad is excessively larger than the platen, the rotation operation may become unstable, and distortion or undulation may occur on the surface of the polishing pad.
In addition, as described above, when the polishing pad is fixed to the platen, the side surface of the annular shield member of the polishing pad may be in contact with, in close contact with, or spaced apart from the side surface of the platen.
The polishing pad can be carefully selected and subjected to a general polishing operation after being fixed to the platen by suction. In the present invention, the material, shape, and size of the target member to be polished are not limited at all.
In the polishing operation, a polishing slurry is supplied between the member to be polished and the polishing pad. The polishing slurry to be supplied during this polishing operation is not limited in the structure (material, particle diameter, solvent type, slurry concentration, etc.) of the abrasive grains, or the presence or absence of additives (surfactant, thickener, etc.), and the type thereof. The invention is particularly useful for grinding operations using low viscosity grinding slurries. This is because the low viscosity slurry easily invades into the bonding interface between the adsorption layer and the platen. The polishing slurry of the present invention is effective as a polishing slurry having a viscosity of 10 mPas or less at 20 ℃. Further, the polishing slurry is effective for a polishing slurry of 3 mPas or less, and is also effective for a polishing slurry of 1.5 mPas or less. Even with a low viscosity of 0.01 mPas, the polishing pad is not easily peeled off.
The members to be polished are sequentially polished and replaced when the polishing pad is observed to be consumed. In this case, as in the conventional case, if the polishing pad is moved upward so as to be displaced from the polishing pad and air enters the interface, the polishing pad can be easily released from being fixed. Then, a new polishing pad having the same configuration is fixed to the platen and the polishing operation is continued.
[ efficacy of the invention ]
The polishing pad of the present invention has an adsorption layer made of a predetermined silicone composition, and an annular shield member is provided on the surface of the adsorption layer. According to the present invention, the polishing pad can be prevented from being displaced or peeled off due to intrusion of polishing slurry between the adsorption layer and the platen. Accordingly, even in a long-time polishing operation, the operation is not interrupted due to the defect of the polishing pad, and an efficient operation can be performed. In the present invention, since the original function of the adsorption layer is ensured, the operability of the polishing pad replacement and fixing operation is also preferable.
Drawings
Fig. 1 is a diagram illustrating a state in which a polishing pad of the present invention is fixed to a platen.
Fig. 2 is a diagram illustrating an operation state of the polishing slurry when the polishing work is performed according to the present invention.
Fig. 3 is a view showing an example of a cross-sectional shape of the annular shield member.
Fig. 4 is a diagram illustrating an appearance and a cross-sectional configuration of a polishing pad manufactured according to this embodiment.
Fig. 5 is a schematic view of a polishing apparatus used in the present embodiment.
Fig. 6 is a diagram illustrating a structure of a polishing pad provided with an adsorption layer.
Detailed Description
Preferred embodiments of the present invention are described below. In this embodiment, a polishing pad in which an annular shield member is bonded to a conventional polishing pad having an adsorption layer is manufactured, and a silicon wafer is polished.
Fig. 4 is a view showing the appearance of the polishing pad manufactured according to this embodiment. The polishing pad manufactured in this embodiment is a circular sheet having a polishing layer on the surface and an adsorption layer on the back surface. The polishing layer and the adsorption layer are supported by the substrate. The adsorption layer is provided with an annular shield member along the outer periphery of the polishing pad (adsorption layer).
Here, each constituent member and manufacturing process of the polishing pad of this embodiment will be described. First, the base material was a circular sheet (thickness 50 μm, outer diameter 850mm) made of PET as a resin material. A coating liquid containing a silicone component including polyorganosiloxane is applied to one surface (back surface) of the substrate to form an adsorption layer. The coating liquid was a solvent-free silicone liquid containing 0.6 parts by weight of a crosslinking agent and 2 parts by weight of a platinum catalyst per 100 parts by weight of silicone (molecular weight 30000) containing a linear polyorganosiloxane having vinyl groups only at both ends. After the coating liquid is applied to a substrate, the substrate is fired at 150 to 160 ℃ for 100 seconds to crosslink the silicone, thereby forming an adsorption layer. The thickness of the crosslinked adsorption layer was 30 μm.
The polishing layer formed on the other surface of the substrate was a cow leather (suede) general-purpose ester polishing cloth (model 7355-000FE) and a round polishing cloth (thickness 1.37mm) with a nap (nap) length of 450 μm. In this embodiment, the polishing layer is bonded to the other surface of the substrate on which the adsorption layer is formed, with an acrylic adhesive.
The material of the annular shield member is a cellulose nonwoven fabric (water absorption rate 30%). The dimensions of the shield member were 850mm in outer diameter, 800mm (width 25mm) in inner diameter, and 10mm in thickness. In addition, the diameter of the polishing pad and the inner diameter of the annular shield member in this embodiment are set in consideration of the outer diameter of the platen of the polishing apparatus used in the polishing test described later. That is, the diameter of the polishing pad is set to be larger than the outer diameter of the platen by 50mm with respect to 800mm, and the inner diameter of the annular shield member is set to be substantially equal to the outer diameter of the platen. In the present embodiment, the annular shield member is bonded to the adsorption layer with an acrylic adhesive. Thus, the polishing pad of this embodiment was produced.
Next, a polishing test was performed using the polishing pad of this embodiment. In this polishing test, a polishing pad of this embodiment was mounted on a platen (made of SUS with an outer diameter of 800 mm) of a polishing apparatus shown in fig. 5, and a silicon wafer (8 inches) was polished as a member to be polished. When the polishing pad is mounted, the annular shield member is fitted into the platen, and pressure is applied from above the polishing layer. Then, a silicon wafer as a member to be polished was pressed against the polishing layer and rotated, and a polishing slurry was dropped (at a flow rate of 150ml/min) onto the polishing layer to perform polishing work.
A commercially available polishing slurry (trade name: Glanzox, manufactured by fujimicin corporation) containing colloidal silica as polishing particles was diluted with pure water and a surfactant (polishing slurry: pure water: surfactant: 70: 25: 5) to be used. The viscosity of the polishing slurry was 0.7 mPas.
Other milling conditions are as follows.
Grinding pressure: 0.163kgf/cm2
Rotation speed of polishing pad: 45rpm
Rotation speed of the member to be ground: 47rpm
Rocking speed of polishing head: 250mm/min
Grinding time: 60min and 480min
After the polishing operation was performed for the above-described time periods, the adhesion state between the polishing pad and the platen was visually checked to examine whether the polishing pad was deviated or peeled. As a result, no shifting or peeling of the polishing pad was observed even when polishing was performed for a short time of 60min or for a long time of 480 min. After the wafer after the polishing operation was washed with pure water and dried, the polished surface was observed, and as a result, no significant scratches were observed.
Comparative example: in order to compare with the polishing pad of the present embodiment, a polishing test was performed using a conventional polishing pad (fig. 6) having an adsorption layer. The polishing pad of this comparative example basically has the same configuration as the polishing pad of the present embodiment, and includes a polishing layer and an adsorption layer on each surface of a base. The constituent materials and the manufacturing steps of the polishing layer and the adsorption layer are the same as those of the polishing pad of this embodiment. However, the annular shield member is not looped on the adsorption layer. The outer diameter of the polishing pad of the comparative example was approximately equal to the outer diameter of the platen.
The polishing pad of the comparative example was adsorbed and fixed to the platen in the same manner as in the example, and polishing was performed under the same polishing conditions as described above, and as a result, no offset or peeling of the polishing pad was observed in the polishing performed in a short time of 60 min. However, when polishing is performed for a long time of 480min, the polishing pad starts to be displaced and peeling occurs when 250min elapses. Therefore, the effect of the annular shield member on the adsorption layer in the present invention can be confirmed.
[ industrial applicability ]
As described above, the polishing pad of the present invention can maintain a fixed state without being displaced or peeled from the platen even in a long polishing operation. According to the present invention, stable polishing work can be performed while maintaining the convenience of the adsorption layer. According to the present invention, a highly accurate polished surface can be formed even for a wafer and a display panel having a step size and a large area.
Claims (5)
1. A polishing pad comprises a base material, an adsorption layer formed on one surface of the base material, and a polishing layer formed on the other surface of the base material; wherein,
the polishing pad is used for adsorbing and fixing the adsorption layer on the platform and supplying polishing slurry to the polishing layer during polishing operation;
the adsorption layer comprises a composition crosslinked by at least 1 silicone selected from the following silicones: a silicone comprising a linear polyorganosiloxane having a vinyl group only at both ends, a silicone comprising a linear polyorganosiloxane having a vinyl group at both ends and at a side chain, a silicone comprising a branched polyorganosiloxane having a vinyl group only at the ends, and a silicone comprising a branched polyorganosiloxane having a vinyl group at the ends and at a side chain;
in order to prevent the slurry from entering the interface between the adsorption layer and the platen, the adsorption layer is provided with an annular shield member along the outer periphery of the polishing pad.
2. The polishing pad according to claim 1, wherein the cross-sectional shape of the shielding member is a rectangle or a rectangle with one or both sides of the lower end portion chamfered.
3. The polishing pad according to claim 1 or 2, wherein the shielding member has a width of 5mm or more and a thickness of 10mm or more and 50mm or less.
4. The polishing pad according to any one of claims 1 to 3, wherein the shield member is made of any one of a fiber, rubber, vinyl resin, styrene resin, polycarbonate, fluororesin, and polyurethane.
5. A polishing method for performing a polishing operation using the polishing pad according to any one of claims 1 to 4; wherein,
a polishing pad having a diameter larger than that of the platen and provided with an annular shield member on the adsorption layer is used,
the polishing pad is fixed on the platform in an absorption way,
polishing slurry is supplied to a polishing layer of a polishing pad to perform polishing work.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-089603 | 2018-05-08 | ||
| JP2018089603A JP7026943B2 (en) | 2018-05-08 | 2018-05-08 | Polishing pad and polishing method using the polishing pad |
| PCT/JP2019/018209 WO2019216301A1 (en) | 2018-05-08 | 2019-05-07 | Polishing pad and polishing method with use of said polishing pad |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111819033A true CN111819033A (en) | 2020-10-23 |
| CN111819033B CN111819033B (en) | 2022-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980017337.4A Active CN111819033B (en) | 2018-05-08 | 2019-05-07 | Polishing pad and polishing method using same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7026943B2 (en) |
| KR (1) | KR102639470B1 (en) |
| CN (1) | CN111819033B (en) |
| TW (1) | TW201946725A (en) |
| WO (1) | WO2019216301A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230173637A1 (en) * | 2020-03-26 | 2023-06-08 | Fujibo Holdings, Inc. | Polishing pad, polishing unit, polishing device, and method for manufacturing polishing pad |
| KR20240049977A (en) | 2022-10-11 | 2024-04-18 | 건국대학교 글로컬산학협력단 | Apparatus for preparing slightly acidic hypochlorous acid water and method for preparing slightly acidic hypochlorous acid water using the same |
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- 2019-05-07 CN CN201980017337.4A patent/CN111819033B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102639470B1 (en) | 2024-02-21 |
| TW201946725A (en) | 2019-12-16 |
| JP7026943B2 (en) | 2022-03-01 |
| KR20210006325A (en) | 2021-01-18 |
| CN111819033B (en) | 2022-05-13 |
| JP2019195855A (en) | 2019-11-14 |
| WO2019216301A1 (en) | 2019-11-14 |
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