CN111799344A - 一种柔性砷化镓太阳能电池及其制作方法 - Google Patents
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Abstract
本发明涉及一种柔性砷化镓太阳能电池及其制作方法。柔性砷化镓太阳能电池包括底部蒸镀有下电极的图形化PI衬底、砷化镓外延层、上电极和减反射膜,图形化PI衬底上方和砷化镓外延层下方蒸镀有键合金属,键合金属将PI薄膜和外延层键合。砷化镓外延层可为倒置生长的单结砷化镓太阳能电池或者多结砷化镓太阳能电池,柔性电池背面为金属电极,可以直接贴在设备表面使用,简化后续封装工艺,并且由于和设备表面直接贴合,可以增加柔性砷化镓太阳电池的散热性,提高产品的稳定性;刚性透明刚性临时衬底的使用,减少了使用砷化镓作为临时衬底带来的高成本和高污染的情况,并且降低了临时衬底去除时带来的对外延层破坏的风险。
Description
技术领域
本发明涉及半导体技术领域,具体涉及一种柔性砷化镓太阳能电池及其制作方法。
背景技术
近年来,我国的太阳能电池技术得到迅猛的发展。砷化镓太阳能电池,具有较高的转换效率和优异的可靠性等优势,被广泛用于空间飞行器,例如导航卫星、通讯卫星,空间站,空间探测器等。采用倒置结构的砷化镓太阳电池,可以较容易的实现带隙匹配,成为持续提高多结砷化镓空间太阳能电池光电性能的一种有效途径。特别倒置柔性电池,以其功率比高,柔韧性好,机械强度高等优势,成为国内外研究机构、企业的重点研究对象。聚酰亚胺薄膜具有耐辐照,耐高低温,化学性质稳定,机械强度大等特点,成为倒置柔性太阳能电池的常用衬底。但是该材料也存在一些缺点,例如热膨胀系数大,在实际使用过程中容易造成外延层断裂脱落,导热性能差,使用过程中会降低太阳电池性能,具有电绝缘性能,必须做成同侧电极,造成太阳能电池的面积浪费,降低转换效率。
发明内容
本发明的目的是克服现有技术的不足,本发明提供了一种柔性砷化镓太阳能电池及其制作方法,解决比功率不高,柔韧性差,成品率不高等问题。
本发明的技术方案:一种柔性砷化镓太阳能电池,包括下电极、图形化PI(聚酰亚胺薄膜)衬底、砷化镓外延层、上电极和减反射膜(Anti-Reflective Coating ARC)。其中,图形化PI衬底底部蒸镀有下电极,图形化PI衬底上方和砷化镓外延层下方蒸镀有键合金属,键合金属将PI薄膜和外延层键合。砷化镓外延层可为倒置生长的单结砷化镓太阳能电池或者多结砷化镓太阳能电池,外延层上方为上电极和减反射膜(ARC),其中上电极为方状条形,与减反射膜相邻设置。
进一步地,所述上电极均为金属材料中Au、Ag、Ge、Ni、Al、In、Ti、Pt的一种或者多种或者合金。
进一步地,所述下电极为金属材料中Au、Ag、Zn、Al、In、Ti、Pt的一种或者多种或者合金。
进一步地,所述的键合金属,其中金属材料可为Au、Ag、Al、In、Ti、Pt中的一种或者多种或者合金。
进一步地,所述减反射膜为TiOx/Al2O3,TiOx或者Al2O3的厚度为λ/4n,其中n为对应TiOx或者Al2O3材料的折射率。
具体制作方法如下:
S1.在N型砷化镓衬底上,依次生长砷化镓缓冲层、GaInP或者AlInP腐蚀截止层、单结或者多结砷化镓太阳能电池和高掺的P型接触层。
S2.分别在PI薄膜和P型接触层面蒸镀键合金属,并将PI薄膜和外延片键合。
S3.在PI薄膜上制作图形,形成图形化PI衬底,并蒸镀一层下电极。
S4.通过临时键合胶,将下电极一面键合到透明刚性临时衬底上。
S5.通过化学腐蚀的方法,去掉N型砷化镓衬底和腐蚀截止层,蒸镀栅线,选择性腐蚀掉金属栅线以外区域的砷化镓。
S6.在外延层上部制作上电极,在外延层上蒸镀减反射膜,并在上电极的主电极上套刻开孔。
S7.采用加热或者光照的方式,去除透明刚性临时衬底,得到电池半成品。
S8. 将电池半成品用切割机切出电池芯片,然后用化学溶液去除电池芯片表面切割残渣,最后用去离子水冲洗化学溶液,烤箱内烘干, 获得柔性砷化镓太阳电池。
进一步地,所述的砷化镓太阳能电池,其电池组成可为AlGaInP,GaInP,AlGaAs,GaAs,InGaAs等,多结太阳能电池中,各个子电池通过隧穿结连接。
进一步地,所述的图形化的PI薄膜的制作,是在PI薄膜上采用负胶工艺形成图形,腐蚀图形包括规则形状(例如圆形或条状)或不规则形状,并用碱性溶液腐蚀掉PI薄膜。
进一步地,所述的透明刚性临时衬底,一般选用宽禁带、高强度的透明材料,如蓝宝书,碳化硅等材料。
(三)有益效果
本发明的优点在于:
图形化的PI膜支撑衬底,兼具PI膜衬底与金属衬底的优点,具有重量轻,导热性高、易贴附等优点;同时将PI膜图形化,有利于热应力的释放,降低外延层与支撑衬底的脱离,可以大幅提高产品良率及利于制作大面积芯片(参见表1);另外,将PI膜图形化,可以制成异侧电极,有效提高产品的吸光面积,提高转换效率(参见表2)。
表1:本发明与现有技术的产品良率对比:
此外,透明刚性临时衬底可保证外延薄膜的平整性和保护外延薄膜不被破坏,利于后续芯片工艺的操作,提高产品质量和良率;通过加热或者光照的形式,使临时键合胶失效,将临时衬底与产品分离,实现临时衬底的重复利用,降低成本与环境污染。
附图说明
图1为本发明电池制备方法实施例的结构示意图。
图2为本发明电池的结构示意图。
图3为本发明的图形化PI衬底图形示例一。
图4为本发明的图形化PI衬底图形示例二。
图5为本发明的图形化PI衬底图形示例三。
图6为本发明的图形化PI衬底图形示例四。
图7为常规工艺制备的产品图,其中A为产品外延层出现断裂。
图8为采用本发明工艺制备的产品图。
附图标记:上电极_1、外延层_2、键合金属_3、图形化PI衬底_4、下电极_5、临时键合胶_6、透明刚性临时衬底_7、减反射膜_8。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1
参阅图1-图2,一种柔性砷化镓太阳能电池,包括图形化PI衬底4底部蒸镀有下电极5,图形化PI衬底4上方蒸镀有键合金属3,键合金属3将PI薄膜和外延层2键合,外延层2为倒置生长的单结砷化镓太阳能电池或者多结砷化镓太阳能电池,外延层2上方为上电极1和减反射膜8,其中上电极1为方状条形,与减反射膜8相邻设置。
制备方法包括如下:
首先,在砷化镓衬底上依次生长砷化镓缓冲层、GaInP或者AlInP腐蚀截止层、单结或者多结砷化镓太阳能电池,高掺的P型接触层;
然后,分别在砷化镓太阳电池具有外延层2一面以及PI膜上蒸镀金属接触层及键合层,用电子束或热阻真空蒸镀的方式,蒸镀金属为Au、Ag、Al、In、Ti、Pd中的一种或多种或合金;
然后,将外延层2的金属键合层和PI膜的金属键合层相对放置在金属键合机上,在相应的温度和压力下键合,形成如图1所示的键合金属3;
然后,在PI膜背面通过涂胶、光刻、显影、腐蚀、去胶等步骤,将PI膜制作出图形化PI衬底4,腐蚀形状为圆形,圆形呈矩阵排列(参阅图3),图形化PI衬底4具有重量轻,导热性高、易贴附等优点。
然后,图形化PI衬底4上蒸镀下电极5,下电极5金属材料可为Au、Ag、Al、In、Ti、Pd中的一种或多种或合金,用电子束和热阻真空蒸镀的方式,蒸镀到图形化PI衬底4,通过柔性电池背面设置金属电极,可以直接贴在设备表面使用,简化后续封装工艺,并且由于和设备表面直接贴合,可以增加柔性砷化镓太阳电池的散热性,提高产品的稳定性;
然后,在透明刚性临时衬底7上均匀涂抹临时键合胶6,将蒸镀有下电极5的一面对准涂有临时键合胶6的一面,贴合在一起,其中透明刚性临时衬底7可保证外延薄膜的平整性和保护外延薄膜不被破坏,利于后续芯片工艺的操作,提高产品质量和良率。
然后,去除砷化镓衬底、砷化镓缓冲层、腐蚀截止层;
然后,在外延层2正面,通过涂胶、光刻、腐蚀、蒸镀、去胶等步骤,在外延层2正面制作上电极1;
然后,在外延层2正面蒸镀减反射膜;
然后,再通过加热或者光照方式,去掉透明刚性临时衬底,得到电池半成品。通过加热或者光照的形式,使临时键合胶失效,将临时衬底与产品分离,实现临时衬底的重复利用,减少了使用砷化镓作为临时衬底带来的高成本和高污染的情况,并且降低了临时衬底去除时带来的对外延层破坏的风险(参阅图7和图8);
最后,将电池半成品用切割机切出电池芯片,然后用化学溶液去除电池芯片表面切割残渣,最后用去离子水冲洗化学溶液,烤箱内烘干, 获得柔性砷化镓太阳电池。
实施例2
如图4所示:腐蚀形状由n个等距排列的相同矩形竖条(例如9个相同矩形竖条)和n-1个矩形横条组成,n个相同矩形竖条的长边中部通过n-1个矩形横条连通,矩形竖条的短边长与矩形横条的短边长相等,使得图形化PI衬底4具有重量轻,导热性高、易贴附等优点,其余同实施例1。
实施例3
如图5和如图6所示,腐蚀形状还可以是不规则形状,比如不规则的弧形或者多边形,使得图形化PI衬底4具有重量轻,导热性高、易贴附等优点,其余同实施例1。
将实施例1所制备的太阳能电池进行测试,得到其具体参数见表2。
表2:柔性电池光电性能对比表
依据表2可知,采用本专利工艺生产的柔性电池的填充因子和转换效率均有所提升,电池整体性能优于常规工艺。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的保护范围由所附权利要求及其等同物限定。
Claims (10)
1.一种柔性砷化镓太阳能电池,其特征在于,包括上电极、外延层、键合金属、图形化PI衬底、下电极、减反射膜,从下往上依次为下电极、图形化PI衬底、键合金属、外延层和上电极,外延层为倒置生长的单结砷化镓太阳能电池或者多结砷化镓太阳能电池,外延层上部为上电极和减反射膜,上电极与减反射膜相邻设置。
2.根据权利要求1所述的柔性砷化镓太阳能电池,其特征在于,所述上电极为Au、Ag、Ge、Ni、Al、In、Ti、Pt的一种或多种或合金;所述下电极为Au、Ag、Zn、Al、In、Ti、Pt的一种或多种或合金。
3.根据权利要求1所述的柔性砷化镓太阳能电池,其特征在于,所述键合金属为Au、Ag、Al、In、Ti、Pt的一种或者多种或合金。
4.根据权利要求1所述的柔性砷化镓太阳能电池,其特征在于,所述减反射膜为TiOx/Al2O3,TiOx或者Al2O3的厚度为λ/4n,其中n为对应TiOx或者Al2O3材料的折射率。
5.一种制备如权利要求1-4任一项所述的柔性砷化镓太阳能电池的方法,其特征在于,包括如下步骤:
S1.在N型砷化镓衬底上,依次生长砷化镓缓冲层、GaInP或者AlInP腐蚀截止层、单结或者多结砷化镓太阳能电池和高掺的P型接触层;
S2.分别在PI薄膜和P型接触层面蒸镀键合金属,并将PI薄膜和外延层键合;
S3.在PI薄膜上制作图形,形成图形化PI衬底,并蒸镀一层下电极;
S4.通过临时键合胶,将下电极一面键合到透明刚性临时衬底上;
S5.通过化学腐蚀的方法,去掉N型砷化镓衬底和腐蚀截止层,蒸镀栅线,选择性腐蚀掉金属栅线以外区域的砷化镓;
S6.在外延层上部制作上电极,在外延层上蒸镀减反射膜,并在上电极的主电极上套刻开孔;
S7.采用加热或者光照的方式,去除透明刚性临时衬底,得到电池半成品;
S8.将电池半成品用切割机切出电池芯片,然后用化学溶液去除电池芯片表面切割残渣,最后用去离子水冲洗化学溶液,烤箱内烘干, 获得柔性砷化镓太阳电池。
6.根据权利要求5所述的一种制备柔性砷化镓太阳能电池的方法,其特征在于:所述S1中砷化镓太阳能电池包括AlGaInP、GaInP、AlGaAs、GaAs、InGaAs,多结太阳能电池中,各个子电池通过隧穿结连接。
7.根据权利要求5所述的一种制备柔性砷化镓太阳能电池的方法,其特征在于:S3中所述在PI薄膜上制作图形,是在PI薄膜上采用负胶工艺形成图形,并用碱性溶液腐蚀掉PI薄膜。
8.根据权利要求5所述的一种制备柔性砷化镓太阳能电池的方法,其特征在于:S3中所述图形化PI衬底的腐蚀形状是圆形,圆形呈矩阵排列。
9.根据权利要求5所述的一种制备柔性砷化镓太阳能电池的方法,其特征在于:S3中所述图形化PI衬底的腐蚀形状由n个等距排列的相同矩形竖条和n-1个矩形横条组成,n个相同矩形竖条的长边中部通过n-1个矩形横条连通,矩形竖条的短边长与矩形横条的短边长相等。
10.根据权利要求5所述的一种制备柔性砷化镓太阳能电池的方法,其特征在于:S4中所述透明刚性临时衬底选用宽禁带、高强度的透明材料。
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