CN104347754A - 薄型GaInP/GaAs/Ge太阳电池的制备方法 - Google Patents
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Abstract
本发明涉及一种薄型GaInP/GaAs/Ge太阳电池的制备方法，包括在GaInP/GaAs/Ge外延片的受光面蒸镀上电极、背光面蒸镀下电极，上电极上蒸镀减反射膜，其特点是：对外延片的衬底进行腐蚀，使厚度0.18mm±0.02mm的外延片减薄至0.14mm以下；由于减小了电池的厚度，提高了电池的柔韧性，延长了电池的使用寿命，通过厚度的减薄，降低了电池的重量，提高太阳电池的功率/重量；采用Au-Ge-Ag-Au上电极和Au-Ge-Ag下电极，提高了电极焊性的牢固度；上电极采用了梳状密栅形栅线结构，有效减小了遮光功率损失与串联电阻功率损失之和；TiO2、Al2O3作为减反射膜，最低了电池表面反射率。
Description
技术领域
本发明属于太阳能电池技术领域，特别是涉及一种薄型GaInP/GaAs/Ge太阳电池的制备方法。
背景技术
随着砷化镓太阳能电池技术的不断发展，砷化镓太阳能电池由于具有高光电转换效率以及良好的可靠性逐渐成为了倍受青睐的新一代高性能长寿命空间主电源。上世纪80年代初，航天飞行器空间主电源尤其是小卫星空间电源系统开始应用砷化镓太阳能电池，砷化镓组件在空间电源领域的应用比例日益增大，目前已超过90%。砷化镓太阳能电池已成为太阳能电池领域的应用与研究的热点。
目前，GaInP/GaAs/Ge三结砷化镓太阳能电池已凭借高光电转换效率、高抗辐射能力等优势基本上取代了单结砷化镓太阳能电池。虽然GaInP/GaAs/Ge三结砷化镓太阳能电池与单结砷化镓太阳能电池采用的原材料基本相同，但由于GaInP/GaAs/Ge三结砷化镓太阳能电池有三个P-N结，外延结构复杂，而每一层外延生长质量都直接影响整个砷化镓太阳能电池的性能，最重要的是由于GaInP/GaAs/Ge三结砷化镓电池厚度较大、柔性差而影响了电池使用寿命。
发明内容
本发明为解决公知技术中存在的技术问题而提供一种厚度薄、柔韧性好、使用寿命长、重量轻、牢固可靠的薄型GaInP/GaAs/Ge太阳电池的制备方法。
本发明为解决公知技术中存在的技术问题，采用如下技术方案：
薄型GaInP/GaAs/Ge太阳电池的制备方法，包括在GaInP/GaAs/Ge外延片的受光面蒸镀上电极、在背光面蒸镀下电极，上电极上蒸镀减反射膜，其特点是：对GaInP/GaAs/Ge外延片进行衬底的腐蚀，使厚度0.18mm±0.02mm的外延片减薄至0.14mm以下；所述衬底的腐蚀过程包括：用涂胶机在外延片的受光面旋涂胶，放入80～100℃的烘箱中烘烤20～60s，将外延片放入比例为双氧水：氢氟酸=200ml：100ml的溶液中，当外延片厚度减至0.14mm以下，取出外延片，用去离子水清洗，完成对外延片上衬底的减薄。
本发明还可以采用如下技术措施：
所述受光面的上电极蒸镀过程包括：先制出梳状密栅形栅线的光刻板；采用光刻机根据光刻板图形对受光面上光刻出梳状密栅形栅线槽；通过自动蒸发设备，在外延片受光面上梳状密栅形栅线槽内依次蒸镀出带有梳状密栅形栅线的Au-Ge-Ag-Au上电极。
所述下电极为Au-Ge-Ag下电极。
所述减反射膜为TiO2/Al2O3减反射膜。
本发明具有的优点和积极效果：
1、本发明采用了腐蚀衬底，使外延片厚度减薄为0.14mm以下，由于减小了电池的厚度，提高了电池的柔韧性，延长了电池的使用寿命；通过厚度的减薄，降低了电池的重量，提高太阳电池的功率/重量。
2、本发明采用Au-Ge-Ag-Au和Au-Ge-Ag作为收集光生电流的上、下电极材料体系，与电池半导体材料形成良好的欧姆接触，有效提高了上、下电极的可焊性和牢固度；由于上电极采用了梳状密栅形栅线，有效减小了遮光功率损失与串联电阻功率损失之和，提高了电池的光电转换效率。
3、本发明采用TiO2、Al2O3材料作为减反射膜，能在短波段获得很好的减反射效果，有效最低了电池表面的反射率，使短路电流的增益达到最高。
附图说明
图1是本发明薄型GaInP/GaAs/Ge太阳电池的制备方法结构主视示意图；
图2是图1中上电极的俯视示意图；
图3是本发明电池表面反射率曲线图。
图中的标号分别为：1-下电极；2-外延片；3-上电极；4-减反射膜；5-栅线。
具体实施方式
为能进一步公开本发明的发明内容、特点及功效，特例举以下实例并结合附图1-3进行详细说明如下。
薄型GaInP/GaAs/Ge太阳电池的制备方法，包括在GaInP/GaAs/Ge外延片的受光面蒸镀上电极、在背光面蒸镀下电极，上电极上蒸镀减反射膜。
本发明的创新点包括：对GaInP/GaAs/Ge外延片进行衬底的腐蚀，使厚度0.18mm±0.02mm的外延片减薄至0.14mm以下；所述衬底的腐蚀过程包括：用涂胶机在外延片的受光面旋涂胶，放入80～100℃的烘箱中烘烤20～60s，将外延片放入比例为双氧水：氢氟酸=200ml：100ml的溶液中，当外延片厚度减至0.14mm以下，取出外延片，用去离子水清洗，完成对外延片上衬底的减薄。
本发明创新点还包括：
所述受光面的上电极蒸镀过程包括：先制出梳状密栅形栅线的光刻板；采用光刻机根据光刻板图形对受光面上光刻出梳状密栅形栅线槽；通过自动蒸发设备，在外延片受光面上梳状密栅形栅线槽内依次蒸镀出带有梳状密栅形栅线的Au-Ge-Ag-Au上电极。
所述下电极为Au-Ge-Ag下电极。
所述减反射膜为TiO2/Al2O3减反射膜。
实施例：
选用购买厚度为0.18mm±0.02mm的GaInP/GaAs/Ge外延片；
⑴减薄衬底
如图1所示，选用外延片2的上层面为外延片的受光面，用涂胶机在外延片的受光面旋涂PZ2731型胶，放入80～100℃的烘箱中烘烤20～60s，将外延片的受光面被保护起来；然后将外延片放入比例为双氧水：氢氟酸=200ml：100ml的溶液中，腐蚀减薄衬底，使外延片厚度至0.14mm以下，取出后用去离子水清洗2～3次，完成对外延片上衬底的减薄；然后放入丙酮中浸泡5～10min，去离子水清洗2～3次，用甩干机甩干，完成去胶的过程。由于减小了外延片上衬底的厚度，提高了电池的柔韧性，延长了电池的使用寿命；通过厚度的减薄，降低了电池的重量，提高太阳电池的功率/重量。
⑵光刻外延片
将减薄好的外延片用涂胶机在外延片的受光面涂光刻胶后，放入60～100℃的烘箱中烘烤20～40s。根据图2中梳状密栅形栅线的图形制作好光刻板，通过光刻机对受光面进行光刻，光刻时间为2～6s；然后将光刻好的外延片放入显影液中显影20～35s后；在去离子水中清洗6～8次，用甩干机甩干，外延片的受光面上形成梳状密栅形栅线槽5作为蒸镀上电极的图形；
⑶蒸镀上电极
按照体积比硫酸：双氧水=3:1配制出腐蚀液，将光刻好的外延片放入腐蚀液中腐蚀25～45s，取出后用去离子水清洗2～3次；再将外延片放入浓度20%的盐酸溶液中腐蚀20～30s，去离子水清洗2～3次，用甩干机甩干，腐蚀清洗掉外延片的受光面上栅线槽内的杂质。
将外延片装入自动蒸发设备中，在设备的坩埚中装料，设定自动蒸镀程序，在外延片受光面上梳状密栅形栅线槽内依次蒸镀厚度50nm的Au、20nm的Ge、300nm的Ag和50nm的Au，取出外延片放入丙酮中浸泡5～10min，去离子水清洗2～3次，用甩干机甩干，去掉光刻胶，外延片的受光面上形成图1所示Au-Ge-Ag-Au上电极3，上电极的表面形成图2所示的梳状密栅形栅线；
⑷蒸镀下电极
将蒸镀好的上电极外延片放入涂胶机中，在受光面和上电极涂上PZ218型胶，60～110℃的烘箱中烘烤40～60s，将受光面和上电极保护起来；将外延片放入浓度为10～20%的氢氟酸溶液中腐蚀20～40s，去离子水清洗2～3次，用甩干机甩干，腐蚀清洗掉外延片背光面的杂质；
将外延片装入UZLV型自动蒸发设备中，在设备的坩埚中装料，设定自动蒸镀程序，在外延片的背光面依次蒸镀厚度50nm的Au、30nm的Ge和4000nm的Ag，制出图1所示的Au-Ge-Ag下电极1；将外延片放入丙酮中浸泡5～10min，去离子水清洗2～3次，用甩干机甩干，去掉受光面和上电极表面的胶；
⑸划片
将蒸镀好下电极的外延片放入自动划片机中，按照图2所示图形程序划割出本发明电池。
⑹蒸镀减反射膜
将划割后的电池放到高真空镀膜机的蒸镀盘上，将TiO2和Al2O3分别装入坩埚内，关闭高真空镀膜机的真空室门，对高真空镀膜机进行真空度大于5×10-4Pa的抽真空，在上电极先后蒸镀60nm厚的TiO2和90nm厚的Al2O3蒸镀，完成图1中TiO2/Al2O3减反射膜4的蒸镀过程；即完成本发明薄型GaInP/GaAs/Ge太阳电池的制作过程。经对电池表面进行反射率测试，取得了如附图3所示很好的减反射效果。
尽管上面结合附图对本发明的优选实施例进行了描述，但是本发明并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，并不是限制性的，本领域的普通技术人员在本发明的启示下，在不脱离本发明宗旨和权利要求所保护的范围情况下，还可以作出很多形式。这些均属于本发明的保护范围之内。
Claims (4)
1.薄型GaInP/GaAs/Ge太阳电池的制备方法，包括在GaInP/GaAs/Ge外延片的受光面蒸镀上电极、在背光面蒸镀下电极，上电极上蒸镀减反射膜，其特征在于：对GaInP/GaAs/Ge外延片进行衬底的腐蚀，使厚度0.18mm±0.02mm的外延片减薄至0.14mm以下；所述衬底的腐蚀过程包括：用涂胶机在外延片的受光面旋涂胶，放入80～100℃的烘箱中烘烤20～60s，将外延片放入比例为双氧水：氢氟酸=200ml：100ml的溶液中，当外延片厚度减至0.14mm以下，取出外延片，用去离子水清洗，完成对外延片上衬底的减薄。
2.根据权利要求1所述的薄型GaInP/GaAs/Ge太阳电池的制备方法，其特征在于：所述受光面的上电极蒸镀过程包括：先制出梳状密栅形栅线的光刻板；采用光刻机根据光刻板图形对受光面上光刻出梳状密栅形栅线槽；通过自动蒸发设备，在外延片受光面上梳状密栅形栅线槽内依次蒸镀出带有梳状密栅形栅线的Au-Ge-Ag-Au上电极。
3.根据权利要求1所述的薄型GaInP/GaAs/Ge太阳电池的制备方法，其特征在于：所述下电极为Au-Ge-Ag下电极。
4.根据权利要求1所述的薄型GaInP/GaAs/Ge太阳电池的制备方法，其特征在于：所述减反射膜为TiO2/Al2O3减反射膜。
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