CN111799340A - 一种可延展红外探测器及其制备方法 - Google Patents

一种可延展红外探测器及其制备方法 Download PDF

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CN111799340A
CN111799340A CN202010685975.8A CN202010685975A CN111799340A CN 111799340 A CN111799340 A CN 111799340A CN 202010685975 A CN202010685975 A CN 202010685975A CN 111799340 A CN111799340 A CN 111799340A
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陈华民
张�诚
王军
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Abstract

本发明涉及一种可延展红外探测器及其制备方法,包括从下到上依次设置的可延展柔性衬底、聚酰亚胺薄膜、石墨烯沟道阵列,以及可延展柔性封装;所述石墨烯沟道两端均制有电极。本发明红外探测器阵列具有可延展柔性,可以贴合在不同形状表面或变形成焦平面阵列,适用于特殊测试环境;制备方法简单,易于控制形貌并实现大面积阵列制备,同时褶皱石墨烯具有较高的红外响应。

Description

一种可延展红外探测器及其制备方法
技术领域
本发明涉及红外探测领域,具体涉及一种可延展红外探测器及其制备方法。
背景技术
光电探测器已经成为夜视、医学成像、环境监测等多种应用中的重要器件,传统半导体探测器虽然性能稳定,但是制备工艺复杂,成本高。纳米材料和制备技术的提高有利于降低器件制备成本,简化工艺流程,改善器件性能。
石墨烯具有超高的载流子迁移率和高机械强度,更重要的是其带隙为零而具有超宽的探测范围,突破了传统探测器的“长波极限”。同时,由于应用领域不断拓展,柔性电子的兴起,红外探测器在可穿戴领域表现出了巨大的潜力,也对其可延展性和柔性提出了更高的要求。
发明内容
有鉴于此,本发明的目的在于提供一种可延展红外探测器及其制备方法,可通过形变适应不规则形状,制备焦平面阵列等,在特殊环境红外探测领域和柔性电子领域具有广阔的市场前景。
为实现上述目的,本发明采用如下技术方案:
一种可延展红外探测器,包括从下到上依次设置的可延展柔性衬底、聚酰亚胺薄膜、石墨烯沟道阵列,以及可延展柔性封装;所述石墨烯沟道两端均制有电极。
进一步的,所述石墨烯沟道和电极为褶皱石墨烯沟道和褶皱电极。
进一步的,所述可延展柔性衬底为聚甲基硅树脂、氨基硅树脂和氟硅树脂其中的一种或几种。
一种可延展红外探测器的制备方法,包括以下步骤;
步骤S1:在衬底上生长可延展柔性衬底,并进行预拉伸;
步骤S2:在预拉伸的可延展柔性衬底上制备聚酰亚胺薄膜;
步骤S3:通过激光直写的方法在聚酰亚胺薄膜上,制备石墨烯沟道阵列;
步骤S4:在石墨烯沟道两端制备电极;
步骤S5:释放预拉伸应变形成褶皱石墨烯沟道和褶皱电极;
步骤S6:对探测器进行可延展柔性封装。
进一步的,所述预拉伸为单向或双向,拉伸后长度和原长的比为1-10之间的任意值。
进一步的,所述的PI薄膜通过旋涂、滴涂或采用商用PI胶带的方法制备,其厚度范围0.05mm-1mm。
进一步的,所述的石墨烯沟道长度为10um-1000um,宽度为10um-200um,石墨烯厚度在1um-1mm之间。
进一步的,所述电极材料为金属或合金电极,其中金属包括金、银、铂、钯、铝、镍、铜、钛、铬、锡、铁、锰、钼、钨或钒 ;合金包括铝合金、钛合金、镁合金、铍合金、铜合金、锌合金、锰合金、镍合金、铅合金、锡合金、镉合金、铋合金、铟合金、镓合金、钨合金、钼合金、铌合金或钽合金。
进一步的,电极制备方法包括金属淀积和光刻两个部分,金属淀积方法为电子束蒸发、磁控溅射或化学气相沉积方法。
进一步的,所述步骤S5具体为:若预拉伸为单向则释放单向预应变;若预拉伸为双向则同时释放双向预应变或先释放单向预应变再释放另一方向预应变。
本发明与现有技术相比具有以下有益效果:
本发明具有可延展柔性,可以贴合在不同形状表面或变形成焦平面阵列,适用于特殊测试环境;制备方法简单,易于控制形貌并实现大面积阵列制备,同时褶皱石墨烯具有较高的红外响应。
附图说明
图1为本发明提出的预拉伸可延展柔性衬底,以硅支撑层上的共聚酯(Ecoflex)为例;
图2为根据本发明实施例中的步骤2处理后的结构图;
图3为根据本发明实施例中的步骤3处理后的结构图;
图4为根据本发明实施例中的步骤4处理后的结构图;
图5为根据本发明实施例中的步骤5处理后的结构图;
图6为根据本发明实施例中的步骤6处理后的结构图的侧视图;
图中,1-可延展柔性衬底、2-聚酰亚胺薄膜、3-石墨烯沟道阵列,4-电极。
具体实施方式
下面结合附图及实施例对本发明做进一步说明。
请参照图6,本发明提供延展红外探测器,包括从下到上依次设置的可延展柔性衬底、聚酰亚胺薄膜、石墨烯沟道阵列,以及可延展柔性封装;所述石墨烯沟道两端均制有电极。
在本实施例中,优选的,所述的可延展柔性衬底可为聚甲基硅树脂、氨基硅树脂和氟硅树脂其中的一种或几种。
在本实施例中,优选的,所述的预拉伸可为单向或双向,预拉伸程度(拉伸后长度和原长的比)为1-10之间的任意值。
在本实施例中,优选的,所述的PI薄膜可以通过旋涂、滴涂等方法制备,也可以为商用PI胶带,其厚度范围0.05mm-1mm。
在本实施例中,优选的,所述的石墨烯沟道长度为10um-1000um,宽度为10um-200um,激光直写的激光功率在0-20W之间,石墨烯厚度在1um-1mm之间。
在本实施例中,优选的,所述的电极材料为金属或合金电极,其中金属包括金、银、铂、钯、铝、镍、铜、钛、铬、锡、铁、锰、钼、钨或钒 ;合金包括铝合金、钛合金、镁合金、铍合金、铜合金、锌合金、锰合金、镍合金、铅合金、锡合金、镉合金、铋合金、铟合金、镓合金、钨合金、钼合金、铌合金或钽合金。
在本实施例中,优选的,所述的电极制备方法包括金属淀积和光刻两个部分,金属淀积方法可为电子束蒸发、磁控溅射、化学气相沉积方法。
在本实施例中,优选的,所述的释放预应力可分两种情况:若预拉伸为单向则释放单向预应变;若预拉伸为双向则可同时释放双向预应变或先释放单向预应变再释放另一方向预应变。
参考图1-5,本实施例中,还提供一种可延展红外探测器的制备方法,包括以下步骤;
步骤S1:Ecoflex的溶液A和溶液B按照体积比1:1混合,搅拌均匀后通过旋涂仪旋涂,以2000转/分钟旋转10秒,之后放到烘箱,120°加热2小时,形成Ecoflex薄膜。剪取1.5厘米长,1厘米宽的Ecoflex薄膜,沿长度方向拉伸400%,拉伸后长度变为6厘米长,1厘米宽。将拉伸后的Ecoflex固定在硅衬底上。
步骤S2:在预拉伸的可延展柔性衬底上旋涂一层PI溶液,以3000转/分钟旋转15秒,在120度热板上加热20分钟,自然冷却后形成PI薄膜;
步骤S3:调整合适的激光功率和时间,激光照射PI的地方形成石墨烯,制备石墨烯沟道阵列,其中石墨烯的长宽比为150um/30um,用丙酮去除其余的PI薄膜。
步骤S4:首先在PI表面旋涂一层光刻胶AZ5214,对其进行曝光显影,在PI表面形成光刻图案,通过磁控溅射的工艺溅射Ti/Au金属电极,厚度分别为5nm/50nm,之后将样品浸入丙酮中去除光刻胶,在石墨烯两端形成金属电极。
步骤S5:将可延展柔性衬底从硅衬底上揭起,缓慢释放预应变,恢复到原长后静置,石墨烯在应变下形成褶皱石墨烯,电极形成褶皱电极。
步骤S6:首先在电极上通过金丝球焊完成接线,在最上层旋涂一层Ecoflex溶液,在120度热板上加热固化2小时,完成可延展柔性封装。
以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。

Claims (10)

1.一种可延展红外探测器,其特征在于,包括从下到上依次设置的可延展柔性衬底、聚酰亚胺薄膜、石墨烯沟道阵列,以及可延展柔性封装;所述石墨烯沟道两端均制有电极。
2.根据权利要求1所述的一种可延展红外探测器,其特征在于:所述石墨烯沟道和电极为褶皱石墨烯沟道和褶皱电极。
3.根据权利要求1所述的一种可延展红外探测器,其特征在于:所述可延展柔性衬底为聚甲基硅树脂、氨基硅树脂和氟硅树脂其中的一种或几种。
4.一种可延展红外探测器的制备方法,其特征在于,包括以下步骤;
步骤S1:在衬底上生长可延展柔性衬底,并进行预拉伸;
步骤S2:在预拉伸的可延展柔性衬底上制备聚酰亚胺薄膜;
步骤S3:通过激光直写的方法在聚酰亚胺薄膜上,制备石墨烯沟道阵列;
步骤S4:在石墨烯沟道两端制备电极;
步骤S5:释放预拉伸应变形成褶皱石墨烯沟道和褶皱电极;
步骤S6:对探测器进行可延展柔性封装。
5.根据权利要求4所述的一种可延展红外探测器的制备方法,其特征在于:所述预拉伸为单向或双向,拉伸后长度和原长的比为1-10之间的任意值。
6.根据权利要求4所述的一种可延展红外探测器的制备方法,其特征在于:所述的PI薄膜通过旋涂、滴涂或采用商用PI胶带的方法制备,其厚度范0.05mm-1mm。
7.根据权利要求4所述的一种可延展红外探测器的制备方法,其特征在于:
所述的石墨烯沟道长度为10um-1000um,宽度为10um-200um,石墨烯厚度在1um-1mm之间。
8.根据权利要求4所述的一种可延展红外探测器的制备方法,其特征在于:所述电极材料为金属或合金电极,其中金属包括金、银、铂、钯、铝、镍、铜、钛、铬、锡、铁、锰、钼、钨或钒;合金包括铝合金、钛合金、镁合金、铍合金、铜合金、锌合金、锰合金、镍合金、铅合金、锡合金、镉合金、铋合金、铟合金、镓合金、钨合金、钼合金、铌合金或钽合金。
9.根据权利要求4所述的一种可延展红外探测器的制备方法,其特征在于:电极制备方法包括金属淀积和光刻两个部分,金属淀积方法为电子束蒸发、磁控溅射或化学气相沉积方法。
10.根据权利要求5所述的一种可延展红外探测器的制备方法,其特征在于,所述步骤S5具体为:若预拉伸为单向则释放单向预应变;若预拉伸为双向则同时释放双向预应变或先释放单向预应变再释放另一方向预应变。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113410330A (zh) * 2021-06-22 2021-09-17 金华紫芯科技有限公司 一种石墨烯非晶氧化镓薄膜的日盲紫外探测器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9029252B2 (en) * 2013-02-14 2015-05-12 Samsung Electronics Co., Ltd. Nanostructure, optical device including the same, and methods of manufacturing the nanostructure and the optical device
CN105174250A (zh) * 2015-09-17 2015-12-23 清华大学 一种光照还原有机薄膜制备石墨烯的方法
CN107655397A (zh) * 2017-08-22 2018-02-02 中国科学院上海硅酸盐研究所 一种兼备高电阻应变灵敏系数与高形变能力的多功能石墨烯柔性传感器及其制备方法
CN109448883A (zh) * 2018-10-19 2019-03-08 东南大学 一种预拉伸加工的褶皱状石墨烯柔性电极的制造方法
CN109755333A (zh) * 2019-01-10 2019-05-14 北京交通大学 一种基于石墨烯的光电探测器
CN109839232A (zh) * 2019-01-25 2019-06-04 上海交通大学 应变传感器及其形成方法、应变传感器阵列及其形成方法
CN111354805A (zh) * 2020-03-06 2020-06-30 杭州高烯科技有限公司 石墨烯纤维在中红外光电探测中的应用

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9029252B2 (en) * 2013-02-14 2015-05-12 Samsung Electronics Co., Ltd. Nanostructure, optical device including the same, and methods of manufacturing the nanostructure and the optical device
CN105174250A (zh) * 2015-09-17 2015-12-23 清华大学 一种光照还原有机薄膜制备石墨烯的方法
CN107655397A (zh) * 2017-08-22 2018-02-02 中国科学院上海硅酸盐研究所 一种兼备高电阻应变灵敏系数与高形变能力的多功能石墨烯柔性传感器及其制备方法
CN109448883A (zh) * 2018-10-19 2019-03-08 东南大学 一种预拉伸加工的褶皱状石墨烯柔性电极的制造方法
CN109755333A (zh) * 2019-01-10 2019-05-14 北京交通大学 一种基于石墨烯的光电探测器
CN109839232A (zh) * 2019-01-25 2019-06-04 上海交通大学 应变传感器及其形成方法、应变传感器阵列及其形成方法
CN111354805A (zh) * 2020-03-06 2020-06-30 杭州高烯科技有限公司 石墨烯纤维在中红外光电探测中的应用

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
朱奂文 等: "网状Au@Ag微纳结构基底的制备及其SERS性能研究", 《动能材料》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113410330A (zh) * 2021-06-22 2021-09-17 金华紫芯科技有限公司 一种石墨烯非晶氧化镓薄膜的日盲紫外探测器
CN113410330B (zh) * 2021-06-22 2022-07-22 金华紫芯科技有限公司 一种石墨烯非晶氧化镓薄膜的日盲紫外探测器

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