CN111796489A - Mask alignment photoetching machine based on UV-LED (ultraviolet-light emitting diode) area array type light source - Google Patents
Mask alignment photoetching machine based on UV-LED (ultraviolet-light emitting diode) area array type light source Download PDFInfo
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- CN111796489A CN111796489A CN202010637250.1A CN202010637250A CN111796489A CN 111796489 A CN111796489 A CN 111796489A CN 202010637250 A CN202010637250 A CN 202010637250A CN 111796489 A CN111796489 A CN 111796489A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
Abstract
The invention discloses a mask alignment photoetching machine based on a UV-LED area array type light source, which comprises: the light source adopts a UV-LED light source; the micro lens array is used for collimating the emergent light beam of the light source; a mask alignment system for aligning the mask mark with the wafer mark; the mask alignment system includes: the mechanical system comprises a mask workpiece table, a wafer workpiece table, a first driving mechanism and a second driving mechanism, wherein a mask and a wafer are arranged in parallel; and the emergent light beam of the UV-LED light source forms a square exposure light spot on the surface of the mask through the micro-lens array, and the mask pattern is transferred onto the wafer through exposure. The invention can realize the alignment precision of the submicron mask and lay a foundation for realizing high-precision photoetching.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a mask alignment photoetching machine.
Background
The photoetching machine is a basic device adopted in the technical field of semiconductor manufacturing and is a core device for producing large-scale integrated circuits. The development of lithography machines has directly affected the state of the art in semiconductor manufacturing. In the existing lithography machine, a light source collimation light path is usually adopted to calibrate the light source, so as to improve the precision of the lithography machine. However, in general, the light path for collimating the light source is complicated, which increases the structural complexity of the lithography machine and leads to an increase in cost.
Disclosure of Invention
In view of the above problems, it is an object of the present invention to provide a mask alignment lithography machine based on a UV-LED area array light source, so as to simplify the structure of the lithography machine and overcome the defects of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention discloses a mask alignment photoetching machine based on a UV-LED area array type light source, which comprises:
the light source adopts a UV-LED light source and is used for forming an exposure field;
the micro lens array is used for collimating the emergent light beam of the light source;
a mask alignment system for aligning the mask mark with the wafer mark;
the mask alignment system includes: the mechanical system comprises a mask workpiece table for mounting a mask, a wafer workpiece table for mounting a wafer, a first driving mechanism for driving the mask workpiece table to move and a second driving mechanism for driving the wafer workpiece table to move, the mask and the wafer are arranged in parallel, the control system is used for controlling the first driving mechanism and the second driving mechanism, and the image processing system is used for calibrating the coincidence degree of mask marks and wafer marks;
and the emergent light beam of the UV-LED light source forms a square exposure light spot on the surface of the mask through the micro-lens array, and the mask pattern is transferred onto the wafer through exposure.
Preferably, contact or proximity exposure is used to transfer the mask pattern onto the wafer.
Preferably, the mask alignment system further comprises a human-machine interface for displaying real-time position coordinates of the mask marks, real-time position coordinates of the wafer marks, and an alignment pattern when aligning the mask marks and the wafer marks.
Preferably, the mask alignment system further comprises a microscope group, the microscope group comprises an upper objective lens and a lower objective lens, the upper objective lens is mounted above the mask and used for searching and acquiring the wafer marking pattern, and the position coordinates of the wafer marking center are acquired through the wafer marking pattern; the lower objective lens is arranged below the wafer and used for searching and acquiring a mask marking pattern, and position coordinates of the center of the mask marking are acquired through the mask marking pattern.
Preferably, the wafer stage comprises: the wafer clamping device comprises an XY motion platform, a Z-axis wafer chuck, a vacuum chuck and a pneumatic cylinder, wherein the vacuum chuck is installed on the XY motion platform, the Z-axis wafer chuck is used for being clamped on the periphery of a wafer, and the pneumatic cylinder is used for adsorbing the wafer on the vacuum chuck.
Preferably, the UV-LED light source forms an exposure field with uniformly distributed light intensity on the wafer.
Preferably, the image processing system includes:
the template acquisition module is used for acquiring an alignment pattern template obtained through training;
the parameter setting module is used for setting operation parameters, and the operation parameters comprise the range of the area to be searched, the image scaling size and the receiving threshold value for stopping searching;
the image acquisition module is used for traversing in the range of the area to be searched to obtain a plurality of images to be searched;
the matching module is used for matching the images to be searched with the alignment pattern template one by one and acquiring the matching degree;
and the identification module is used for arranging the acquired matching degrees in a high-to-low order and identifying the alignment pattern.
Preferably, the identification module is further configured to output one or more of a matching degree, X, Y direction coordinates aligned with the center of the pattern, a rotation angle, a fitting error, a target coverage, a speckle ratio, and a scaling.
Preferably, the template training module comprises:
a graph acquisition unit for acquiring a real alignment pattern on a wafer and setting the real alignment pattern as a training area;
the coordinate setting unit is used for setting an original point and a coordinate system of the training area;
the training area dividing unit is used for dividing the training area into a plurality of local training areas;
the training parameter setting unit is used for setting training parameters, wherein the setting of the training parameters refers to the selection of a training mode and a local training area and the display of a feature extraction result;
the training unit is used for training each local training area, and each local training area at least stores one template obtained from training data;
and the trained characteristic evaluation unit calculates the granularity of the template obtained by training and judges whether the template can be used for target identification and positioning.
Preferably, the origin of the training area is the center of the alignment pattern, and the coordinate system is an XY coordinate system established with the center of the alignment pattern as the origin.
Compared with the prior art, the invention has the following advantages and beneficial effects:
according to the invention, the UV-LED light source is adopted to provide the exposure field, so that preheating is not needed during use, and the efficiency is improved; and the UV-LED light source has high luminous efficiency, low energy consumption and long service life.
The invention adopts the micro-lens array to replace a laser collimation light path, has simple device structure, and is efficient and convenient.
The invention can realize the alignment precision of the submicron mask and lay a foundation for realizing high-precision photoetching.
Drawings
FIG. 1 is a schematic diagram of a mask alignment lithography machine according to the present invention;
FIG. 2 is a schematic diagram of a UV-LED light source and microlens array of the present invention;
FIGS. 3 a-3 c are schematic views of the microscope set, the mask and the wafer in different positions, respectively, according to the present invention;
FIG. 4 is a schematic representation of the present invention before alignment of the mask mark and the wafer mark;
fig. 5 is a schematic illustration of the alignment of the mask marks and the wafer marks of the present invention.
Detailed Description
The embodiments of the present invention will be described below with reference to the accompanying drawings. Those of ordinary skill in the art will recognize that the described embodiments can be modified in various different ways, or combinations thereof, without departing from the spirit and scope of the present invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Furthermore, in the present description, the drawings are not to scale and like reference numerals refer to like parts.
Fig. 1 is a schematic structural diagram of a mask alignment lithography machine according to the present invention, and fig. 2 is a schematic structural diagram of a UV-LED light source and a microlens array according to the present invention, as shown in fig. 1 and fig. 2, the mask alignment lithography machine is a mask alignment lithography machine based on a UV-LED area array light source, and the light source adopts the UV-LED light source 1 to form an exposure field, instead of a complicated light source collimation light path in an exposure system of the lithography machine. In addition, the UV-LED light source 1 has the characteristics of high luminous efficiency, low energy consumption, long service life and the like, and preheating is not needed when the mask is used, so that the mask alignment photoetching machine is safer and more environment-friendly. Preferably, as shown in fig. 2, the UV-LEDs, etc. are uniformly distributed through a light-homogenizing design to form exposure fields with uniformly distributed light intensity on the wafer, without shaping the exposure fields, thereby improving the efficiency.
The mask alignment photoetching machine based on the UV-LED area array type light source further comprises: the micro lens array 2 is used for collimating emergent light beams of the light source, and the micro lens array 2 is used for replacing a laser collimation light path, so that an optical system in the photoetching machine is simple and efficient; a mask alignment system for aligning the mask marks 51 with the wafer marks 52 before exposure (fig. 1 shows a plurality of alignment marks 5 including the mask marks 51 and the wafer marks 52, and only the mask marks 51 and the wafer marks 52 are schematically shown in the figure, and are not used to define specific shapes of the mask marks 51 and the wafer marks 52); the outgoing beam of the UV-LED light source 1 passes through the microlens array 2 to form a square exposure spot (the size may be 300 × 300mm) on the surface of the mask 3, and the mask pattern is transferred onto the wafer 4 by exposure. The mask pattern is carried on the mask, the mask pattern can be a design pattern such as an integrated circuit pattern, the wafer 4 refers to a silicon wafer for manufacturing a silicon semiconductor integrated circuit, the wafer 4 is coated with photoresist, pattern transfer is realized through exposure, the mask pattern is fixed on the wafer 4, and the mask can be used for manufacturing various circuit element structures.
Preferably, contact or proximity exposure is used to transfer the mask pattern onto the wafer 4.
The mask alignment system includes: the mechanical system comprises a mask workpiece table for mounting a mask 3, a wafer workpiece table for mounting a wafer 4, a first driving mechanism for driving the mask workpiece table to move and a second driving mechanism for driving the wafer workpiece table to move, the mask 3 and the wafer 4 are arranged in parallel, the control system is used for controlling the first driving mechanism and the second driving mechanism, and the image processing system is used for calibrating the coincidence degree of a mask mark 51 and a wafer mark 52. The mask alignment system is used for aligning the mask mark 51 and the wafer mark 52 before exposure, thereby realizing the alignment precision of the submicron mask and laying a foundation for realizing high-precision photoetching.
In an alternative embodiment, the control system uses a closed loop control system to receive the coordinates of the center positions of the mask mark 51 and the wafer mark 52, and control the first drive mechanism and the second drive mechanism to adjust the positions of the mask stage and the wafer stage, respectively, to align the mask mark 51 and the wafer mark 52. The first and second driving mechanisms may employ servo motors.
The control system may also be used to control the switching of the UV-LED light source and the intensity of the light.
It should be noted that, the driving principle of the first driving mechanism for the mask stage and the driving principle of the second driving mechanism for the wafer stage are the prior art, and detailed description thereof is omitted in the present invention.
In one embodiment, the image processing system includes:
the template acquisition module is used for acquiring an alignment pattern template obtained through training, wherein the alignment pattern refers to a pattern obtained after aligning a mask mark and a wafer mark;
the parameter setting module is used for setting operation parameters, wherein the operation parameters comprise an area range to be searched, an image zooming size and an acceptance threshold value for stopping searching (namely image searching is carried out within the acceptance threshold value range);
the image acquisition module is used for traversing in the range of the area to be searched to obtain a plurality of images to be searched, wherein the images to be searched refer to images included in the area to be searched;
the matching module is used for matching the images to be searched with the alignment pattern template one by one through a neural network algorithm and acquiring the matching degree; for example, the similarity may be obtained by calculating the similarity of the images, and specifically, the similarity calculation method may use the euclidean distance, the manhattan distance, the chebyshev distance, the cosine distance, and the like to measure the similarity of the two images, which is not described in detail herein;
and the identification module is used for arranging the acquired matching degrees in a high-to-low order and identifying the alignment pattern.
Further, while the alignment pattern is obtained by the recognition module, parameters such as matching degree, X, Y direction coordinates of the center of the alignment pattern, rotation angle, fitting error, target coverage, speckle ratio, scaling ratio, and the like can be listed.
In one embodiment, the image processing system further comprises a template training module for training the alignment pattern. Specifically, the template training module comprises:
a graph acquisition unit for acquiring a real alignment pattern (which can be directly obtained by shooting through a camera) on the wafer and setting the real alignment pattern as a training area;
a coordinate setting unit for setting an origin of a training area and a coordinate system, specifically, setting the center of the alignment pattern as the origin of the training area, and establishing an XY coordinate system with the center of the alignment pattern as the origin;
the training area dividing unit is used for dividing the training area into a plurality of local training areas;
the training parameter setting unit is used for setting training parameters, wherein the setting of the training parameters refers to the selection of a training mode and a local training area, the display of a feature extraction result and the like, and the feature extraction refers to the feature extraction of a graph;
the training unit is used for training each local training area, and each local training area at least stores one template obtained from training data;
and the trained feature evaluation unit calculates the granularity of the template obtained by training and judges whether enough information is available for target recognition and positioning (namely whether the template can be used as an alignment pattern template), wherein the template granularity represents the refinement degree of the graph, the smaller the granularity is, the greater the refinement degree is, and the target recognition and positioning refers to recognition of the alignment pattern.
Fig. 3a to 3c are schematic views of positions of the microscope set, the mask and the wafer in different states, respectively, according to the present invention, and as shown in fig. 3a to 3c, the mask alignment system further includes the microscope set for acquiring coordinates of center positions of the mask marks 51 and the wafer marks 52. Since the distance between the mask and the wafer is small in proximity or contact exposure, the following measurement method using upper and lower double objective lenses is adopted. Preferably, the microscope group comprises an upper objective 61 and a lower objective 62, wherein the upper objective 61 is installed above the mask 3 and used for searching and acquiring the pattern of the wafer mark 52, and the position coordinate of the center of the wafer mark 52 is acquired through the pattern of the wafer mark; the lower objective lens 62 is installed below the wafer 4, and is used for searching and acquiring a mask mark 51 pattern, and acquiring the position coordinates of the center of the mask mark 51 through the mask mark pattern. The outgoing beam passing through the lower objective 62 can search the mask mark 51 on the mask 3 already mounted in place, obtain a mask mark pattern by an image recognition method, and digitally process the obtained mask mark pattern to obtain the center position coordinates of the mask mark 51, and the lower objective 62 can transmit the center position coordinates of the mask mark 51 to the control system, so that the control system controls the second driving mechanism to adjust the position of the wafer stage according to the center position coordinates of the mask mark 51, thereby more conveniently aligning the mask mark 51 and the wafer mark 52. Similarly, the outgoing beam passing through the upper objective 61 may search for the wafer mark 52 on the wafer 4 already mounted in place, obtain the wafer mark pattern by an image recognition method, and digitally process the obtained wafer mark pattern to obtain the center position coordinates of the wafer mark 52, and the upper objective 61 may transmit the center position coordinates of the wafer mark 52 to the control system, so that the control system controls the first driving mechanism to adjust the position of the mask stage according to the center position coordinates of the wafer mark 52, thereby facilitating the alignment of the mask mark 51 and the wafer mark 52.
The mask alignment system further comprises a human-machine interface for displaying the real-time position coordinates of the mask marks 51, the real-time position coordinates of the wafer marks 52, and an alignment pattern when aligning the mask marks 51 and the wafer marks 52. Fig. 5 is a schematic view illustrating alignment of a mask mark and a wafer mark according to the present invention, in which, as shown in fig. 5, an outer contour of the mask mark 51 is square, an inner portion thereof has a hollow cross shape, and the wafer mark 52 has a cross shape, and the alignment means alignment of a center of the square and a center of the cross shape of the wafer mark.
In the present invention, there may be a plurality of mask marks 51 and wafer marks 52, and mask marks 51 and wafer marks 52 are aligned in one-to-one correspondence.
In an alternative embodiment, the wafer stage comprises: XY motion platform, Z axle wafer chuck, vacuum chuck and pneumatic cylinder, wherein, vacuum chuck installs on XY motion platform, and Z axle wafer chuck is used for the card at the periphery of wafer 4, and the pneumatic cylinder is used for adsorbing wafer 4 on vacuum chuck. The XY motion platform is used for moving in the XY plane, adjusts X coordinate and Y coordinate, and Z axle wafer chuck has the rotation axis of high resolution, can adjust the rotation angle of wafer 4. The movement of the XY motion stage is driven by the second driving mechanism, and the wafer adsorbed thereon is driven to move, so that the position of the wafer mark 52 can be adjusted, and the wafer mark 52 is aligned with the mask mark 51.
FIG. 4 is a schematic diagram of the mask mark and wafer mark of the present invention before alignment, as shown in FIG. 4, (x)1，y1) Of fingersIs the center position coordinate of the mask mark 51, (x)2，y2) The center position coordinates of the wafer mark 52 are indicated, theta is the rotation angle of the wafer mark relative to the horizontal line, and when the wafer workpiece stage is controlled by the control system to move to align the wafer mark 52 with the mask mark 51, specifically, the XY motion stage is controlled to do plane motion in the XY plane, so that the Euclidean distance between the center point of the wafer mark and the center point of the mask mark
And controlling the XY motion table to rotate around the Z axis so that theta is 0.
In one embodiment, the mechanical system comprises a support which is a double-layer support, wherein the upper layer is provided with a mask workpiece table, the lower layer is provided with a wafer workpiece table, and the upper layer and the lower layer are parallel to each other.
The operation of the mask alignment lithography machine is described in detail below.
The mask 3 is mounted on a mask stage, and the wafer 4 is mounted on a wafer stage. Specifically, the wafer 4 is placed on a vacuum chuck, and the wafer 4 is adsorbed on the vacuum chuck by the vacuum adsorption function of the pneumatic cylinder and moves together with the XY moving table. The mask stage is driven by the first driving mechanism to move, and the position of the mask 3 is adjusted. The center position coordinates of the mask mark 51 and the wafer mark 52 are acquired by the microscope group, and both the center position coordinates are transmitted to the control system. The control system controls the second driving mechanism to work according to the coordinates of the two central positions, the second driving mechanism drives the XY motion table to move and rotate, so that the cross mark on the wafer 4 is coincided with the mask mark 51, and the coincidence precision is ensured through the image processing system. Finally, the mask pattern is transferred to the photoresist-coated wafer by contact or proximity exposure.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A mask alignment lithography machine based on a UV-LED area array light source is characterized by comprising:
the light source adopts a UV-LED light source and is used for forming an exposure field;
the micro lens array is used for collimating the emergent light beam of the light source;
a mask alignment system for aligning the mask mark with the wafer mark;
the mask alignment system includes: the mechanical system comprises a mask workpiece table for mounting a mask, a wafer workpiece table for mounting a wafer, a first driving mechanism for driving the mask workpiece table to move and a second driving mechanism for driving the wafer workpiece table to move, the mask and the wafer are arranged in parallel, the control system is used for controlling the first driving mechanism and the second driving mechanism, and the image processing system is used for calibrating the coincidence degree of mask marks and wafer marks;
and the emergent light beam of the UV-LED light source forms a square exposure light spot on the surface of the mask through the micro-lens array, and the mask pattern is transferred onto the wafer through exposure.
2. The mask alignment lithography machine based on UV-LED area array light source as claimed in claim 1, wherein the mask pattern is transferred onto the wafer by contact or proximity exposure.
3. The UV-LED area array light source-based mask alignment lithography machine of claim 1, wherein said mask alignment system further comprises a human machine interface for displaying real-time position coordinates of mask marks, real-time position coordinates of wafer marks, alignment patterns in aligning the mask marks and the wafer marks.
4. The mask alignment lithography machine based on the UV-LED area array light source as claimed in claim 2, wherein the mask alignment system further comprises a microscope group, the microscope group comprises an upper objective lens and a lower objective lens, the upper objective lens is installed above the mask and used for searching and acquiring the wafer mark pattern, and the position coordinates of the wafer mark center are acquired through the wafer mark pattern; the lower objective lens is arranged below the wafer and used for searching and acquiring a mask marking pattern, and position coordinates of the center of the mask marking are acquired through the mask marking pattern.
5. The UV-LED area array light source-based mask alignment lithography machine of claim 1, wherein said wafer stage comprises: the wafer clamping device comprises an XY motion platform, a Z-axis wafer chuck, a vacuum chuck and a pneumatic cylinder, wherein the vacuum chuck is installed on the XY motion platform, the Z-axis wafer chuck is used for being clamped on the periphery of a wafer, and the pneumatic cylinder is used for adsorbing the wafer on the vacuum chuck.
6. The mask alignment lithography machine based on UV-LED area array light source as claimed in claim 1, wherein said UV-LED light source forms an exposure field with uniform distribution of light intensity on the wafer.
7. The mask alignment lithography machine according to claim 1, wherein said image processing system comprises:
the template acquisition module is used for acquiring an alignment pattern template obtained through training;
the parameter setting module is used for setting operation parameters, and the operation parameters comprise the range of the area to be searched, the image scaling size and the receiving threshold value for stopping searching;
the image acquisition module is used for traversing in the range of the area to be searched to obtain a plurality of images to be searched;
the matching module is used for matching the images to be searched with the alignment pattern template one by one and acquiring the matching degree;
and the identification module is used for arranging the acquired matching degrees in a high-to-low order and identifying the alignment pattern.
8. The mask alignment lithography machine according to claim 7, wherein said recognition module is further configured to output one or more of matching degree, X, Y direction coordinate of center of alignment pattern, rotation angle, fitting error, target coverage, speckle ratio, and scaling ratio.
9. The UV-LED area-array light source-based mask alignment lithography machine of claim 7, wherein said image processing system further comprises a template training module, said template training module comprising:
a graph acquisition unit for acquiring a real alignment pattern on a wafer and setting the real alignment pattern as a training area;
the coordinate setting unit is used for setting an original point and a coordinate system of the training area;
the training area dividing unit is used for dividing the training area into a plurality of local training areas;
the training parameter setting unit is used for setting training parameters, wherein the setting of the training parameters refers to the selection of a training mode and a local training area and the display of a feature extraction result;
the training unit is used for training each local training area, and each local training area at least stores one template obtained from training data;
and the trained characteristic evaluation unit calculates the granularity of the template obtained by training and judges whether the template can be used for target identification and positioning.
10. The UV-LED area array light source-based mask alignment lithography machine of claim 9, wherein the origin of said training area is the center of the alignment pattern, and said coordinate system is an XY coordinate system established with the center of the alignment pattern as the origin.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010637250.1A CN111796489A (en) | 2020-07-03 | 2020-07-03 | Mask alignment photoetching machine based on UV-LED (ultraviolet-light emitting diode) area array type light source |
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|---|---|---|---|
| CN202010637250.1A CN111796489A (en) | 2020-07-03 | 2020-07-03 | Mask alignment photoetching machine based on UV-LED (ultraviolet-light emitting diode) area array type light source |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113960894A (en) * | 2021-10-29 | 2022-01-21 | 智慧星空(上海)工程技术有限公司 | Proximity contact type exposure device |
| CN114859666A (en) * | 2022-02-25 | 2022-08-05 | 魅杰光电科技(上海)有限公司 | Full-field exposure apparatus and full-field exposure method |
| WO2024000636A1 (en) * | 2022-06-30 | 2024-01-04 | 长鑫存储技术有限公司 | Measurement pattern and preparation method therefor, measurement method and apparatus, and device and medium |
-
2020
- 2020-07-03 CN CN202010637250.1A patent/CN111796489A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113960894A (en) * | 2021-10-29 | 2022-01-21 | 智慧星空(上海)工程技术有限公司 | Proximity contact type exposure device |
| CN114859666A (en) * | 2022-02-25 | 2022-08-05 | 魅杰光电科技(上海)有限公司 | Full-field exposure apparatus and full-field exposure method |
| WO2024000636A1 (en) * | 2022-06-30 | 2024-01-04 | 长鑫存储技术有限公司 | Measurement pattern and preparation method therefor, measurement method and apparatus, and device and medium |
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