CN109212916B - Exposure developing device and method - Google Patents
Exposure developing device and method Download PDFInfo
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- CN109212916B CN109212916B CN201710527269.9A CN201710527269A CN109212916B CN 109212916 B CN109212916 B CN 109212916B CN 201710527269 A CN201710527269 A CN 201710527269A CN 109212916 B CN109212916 B CN 109212916B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
Abstract
The invention discloses an exposure and development device and a method, the device comprises an exposure system, a development system, a visual alignment system and a workpiece transmission system positioned between the exposure system and the development system, wherein the exposure system is arranged on a system frame and comprises an illumination unit, a mask table, a projection unit and a workpiece table which are sequentially arranged along a light path. The invention integrates the exposure system and the development system at the same time, can be used for one-time exposure to development, and can be directly sent out for etching after the development result is detected, thereby greatly reducing the manpower operation and labor cost; all PSS debugging can be automatically completed through the vision alignment system, including confirming the focal plane, adjusting splicing parameters and adjusting non-orthogonality, manual intervention is not needed, a self-adaptive detection adjustment technology is adopted, the anti-interference capability of the machine table is greatly enhanced, and the PSS yield is greatly improved.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to an exposure developing device and method.
Background
Modern lithographic apparatus are based on optical lithography, which uses an optical system to accurately project and expose a pattern on a reticle onto a photoresist-coated substrate (e.g., silicon wafer, sapphire).
PSS (patterned sapphire substrate) has become one of the basic approaches for improving the light efficiency of LED chips, and the pattern width of the current mainstream PSS substrate is 2 microns, the interval is 1 micron, and the etching depth is 1.5-1.8 microns. The basic preparation process of the patterned substrate comprises the following steps: substrate flatness detection, substrate cleaning, gluing, mask stepping exposure, ICP (Inductively Coupled Plasma) etching and micropattern structure consistency optical detection.
FIG. 1 shows the PSS after exposure, and FIG. 2 shows the PSS after etching. Wherein, step exposure generally adopts 2.5um thick glue photoetching process, forms 2 um: 1um honeycomb pattern, and has extremely strict requirements on photoresist thickness, the photoetching resolution, focusing, exposure stability and pattern splicing of a stepper. Many LED chip manufacturers commonly use Nikon second-hand stepper, which has a small focal depth and low yield. Therefore, the PSS processed by the current stepping exposure equipment has consistency and reliability which do not meet the low-cost requirement.
The prior art provides a self-adaptive exposure method based on machine learning, which is mainly used for a front-end high-end photoetching machine, and the detection of the self-adaptive exposure method needs special detection equipment, complex model calculation and computer network configuration, so that the cost is high. It is difficult to meet the low cost requirement of PSS exposure.
Disclosure of Invention
The invention provides an exposure developing device and method, which aim to solve the problems of low yield and high cost in the prior art.
In order to solve the technical problems, the technical scheme of the invention is as follows: the utility model provides an exposure developing device, includes exposure system, development system, vision alignment system and is located work piece transmission system between exposure system, the development system, the exposure system is located the system frame, includes illumination element, mask platform, projection unit and the work piece platform that sets gradually along the light path.
Further, the exposure system further comprises a workpiece stage control system connected with the workpiece stage.
Furthermore, the exposure system also comprises a vertical measurement system corresponding to the workpiece stage, and the vertical measurement system is used for measuring the surface type of the substrate, converting the surface type of the substrate into workpiece stage control parameters and sending the workpiece stage control parameters to the workpiece stage control system.
Further, the exposure system also comprises an environment system which controls the environmental pressure, the temperature and the pollutants of the projection exposure area.
Further, the exposure system further comprises a frame vibration reduction system arranged at the bottom of the system frame.
Furthermore, the workpiece transmission system comprises a rotary manipulator, and a film taking station, a film connecting station and a developing station which are arranged on the rotary manipulator.
Further, the vision alignment system comprises an image acquisition unit, an image processing unit and an automatic focusing unit.
Further, the developing system comprises a developing and sheet taking hand corresponding to the workpiece conveying system and a developing unit corresponding to the developing and sheet taking hand.
Furthermore, a wafer box rotating table is arranged between the workpiece conveying system and the developing system.
Further, a control system is included in communication with the exposure system, the development system, the vision alignment system, and the workpiece transport system.
The invention also provides an exposure developing method, which comprises the following steps:
s1: the workpiece transmission system sends the substrate into an exposure system for local exposure;
s2: the exposed substrate is sent into a developing system by the workpiece transmission system for local development;
s3: the developed substrate is sent into a vision alignment system through the workpiece transmission system, the vision alignment system shoots the substrate, and parameters needing to be adjusted in subsequent exposure are calculated according to the shot images;
s4: inputting the calculated adjustment parameters into a control system, setting parameters to be adjusted by the control system, and preparing for next exposure;
s5: and repeating the steps S1-S4, carrying out next exposure on the substrate until the set parameters meet the production requirements, and outputting the finally exposed substrate through a workpiece conveying system.
Further, in step S3, the image processing unit in the vision alignment system determines the vertical control parameters according to the definition of the captured image and the top/bottom CD of the dense cylinder; and judging a splicing parameter and a non-orthogonal parameter in the horizontal direction according to the spliced pixel deviation.
The invention provides an exposure and development device and a method, the device comprises an exposure system, a development system, a visual alignment system and a workpiece transmission system positioned between the exposure system and the development system, wherein the exposure system is arranged on a system frame and comprises an illumination unit, a mask table, a projection unit and a workpiece table which are sequentially arranged along a light path. The invention integrates the exposure system and the development system at the same time, can be used for one-time exposure to development, and can be directly sent out for etching after the development result is detected, thereby greatly reducing the manpower operation and labor cost; all PSS debugging can be automatically completed through the vision alignment system, including confirming the focal plane, adjusting splicing parameters and adjusting non-orthogonality, manual intervention is not needed, a self-adaptive detection adjustment technology is adopted, the anti-interference capability of the machine table is greatly enhanced, and the PSS yield is greatly improved.
Drawings
FIG. 1 is a schematic representation of a prior art PSS after exposure;
FIG. 2 is a schematic diagram of the PSS after etching in the prior art;
FIG. 3 is a schematic structural view of an exposure and development apparatus according to the present invention;
FIG. 4 is a schematic diagram of a workpiece transport system of the present invention;
FIG. 5 is a schematic illustration of the stitching parameters of the present invention;
FIGS. 6a-6d are schematic diagrams of four vertical parameters;
FIG. 7 is a schematic view of the developing and film-taking hand of the present invention.
Shown in the figure: 1. an exposure system; 11. a lighting unit; 12. a mask stage; 13. a projection unit; 14. a workpiece stage; 15. a workpiece stage control system; 16. a vertical measurement system; 2. a developing system; 21. developing and taking the film; 3. a vision alignment system; 4. a workpiece transport system; 41. rotating the manipulator; 42. a film taking station; 43. a sheet connecting station; 44. a developing station; 5. a system frame; 6. a rotating table; 7. a developing cartridge.
Detailed Description
The invention is described in detail below with reference to the attached drawing figures:
as shown in fig. 3, the present invention provides an exposure and development apparatus, including an exposure system 1, a development system 2, a vision alignment system 3, and a workpiece transport system 4 located between the exposure system 1, the development system 2, and the vision alignment system 3, where the exposure system 1 is disposed on a system frame, and includes an illumination unit 11, a mask stage 12, a projection unit 13, and a workpiece stage 14, which are sequentially disposed along an optical path. Specifically, the substrate coated with the glue is sent into an exposure system 1 by a workpiece transmission system 4 for local exposure, the exposed substrate is sent into a development system 2 by the workpiece transmission system 4 for local development, the developed substrate is sent into a visual alignment system 3 by the workpiece transmission system 4, the substrate is shot by the visual alignment system 3, adjustment parameters are calculated according to the shot images and are automatically focused, the calculated adjustment parameters are input into a control system, and the next exposure process is carried out on the substrate until the exposure parameters meet the production requirements. In the embodiment, the substrate refers to a silicon wafer or PSS.
Mask table 12 is provided with a mask, which is a "patterning device" and refers to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. In particular, for the PSS mask, it should be designed to have a tiled form, such as a quadrilateral, a hexagon, a triangle, etc.
The projection unit 13 includes a refraction type optical system, a reflection type optical system, and a catadioptric type optical system, a magnetic type optical system, an electromagnetic type optical system, and an electrostatic type optical system, or a combination of all of these systems.
The workpiece stage 14 is used for carrying the substrate and moving to a designated position, and has functions of horizontal movement and vertical movement.
Preferably, the exposure system 1 further includes a stage control system 15 connected to the stage 14, and configured to control the stage 14 to perform horizontal and vertical movements.
Preferably, the exposure system 1 further includes a vertical measurement system 16 corresponding to the workpiece stage 14, and the vertical measurement system measures the surface profile of the substrate, converts the measured surface profile into control parameters of the workpiece stage 14, and sends the control parameters to the workpiece stage control system 15. The vertical measurement system is not limited to the photoelectric, pneumatic and other measurement methods, and measures the surface topography of the silicon wafer or the PSS, and in the subsequent exposure, controls the vertical execution structure of the workpiece stage 14 according to the surface features of the silicon wafer or the PSS, and places the exposure field under the optimal focal plane for exposure.
Preferably, the exposure system 1 further comprises an environmental system for controlling the ambient pressure, temperature and contamination of the projection exposure area.
Preferably, the exposure system 1 further comprises a frame damping system disposed at the bottom of the system frame for damping the vibration generated by the exposure system 1.
As shown in fig. 4, the workpiece conveying system 4 includes a rotary manipulator 41, and a taking station 42, a delivering station 43, and a developing station 44 disposed on the rotary manipulator 41, in this embodiment, the taking station 42, the delivering station 43, and the developing station 44 are uniformly distributed along the periphery of the rotary manipulator 41, and are driven by the rotary manipulator 41 to rotate to corresponding positions for taking and placing wafers, wherein the taking station 42 is used for transferring the silicon wafers in the wafer box to the workpiece stage 14 for exposure or transferring the exposed silicon wafers to the wafer box, and the developing station 44 is used for transferring the exposed silicon wafers into the developing system 2 for development.
As shown in fig. 7, the developing system 2 includes a developing and sheet taking hand 21 corresponding to the workpiece conveying system 4 and a developing unit (not shown) corresponding to the developing and sheet taking hand 21, preferably, a rotary table 6 is disposed between the workpiece conveying system 4 and the developing system 2, a developing sheet cassette 7 is placed on the rotary table 6, the developing sheet cassette 7 is driven by the rotary table 6 to rotate when the developing system 2 and the workpiece conveying system 4 perform conveying interaction, and a developing station 44 on the rotary manipulator 41 performs a sheet taking and placing operation when the developing sheet cassette 7 faces the workpiece conveying system 4; when the developing sheet box 7 faces the developing system 2, the developing sheet taking hand 21 performs a sheet taking and placing operation.
Preferably, the vision alignment system 3 comprises an image acquisition unit, an image processing unit and an automatic focusing unit, wherein the image acquisition unit is a CCD camera and shoots a silicon wafer, the image processing unit calculates adjustment parameters according to the shot images, and determines vertical control parameters according to the definition of the shot images and the top/bottom CD of the dense cylinder; judging splicing parameters and non-orthogonal parameters in the horizontal direction according to the spliced pixel deviation, and performing automatic focusing by an automatic focusing unit, wherein the automatic focusing unit is shown as a splicing parameter schematic diagram in fig. 5 and comprises an X direction, a Y direction and an RZ direction; fig. 6a-6d show schematic diagrams of vertical parameters, which are top left shadow, bottom left shadow, top right shadow and bottom right shadow, respectively.
Preferably, the exposure and development device further comprises a control system connected with the exposure system 1, the development system 2, the vision alignment system 3 and the workpiece transmission system 4, and the control system controls the exposure system 1, the development system 2, the vision alignment system 3 and the workpiece transmission system 4 to perform coordination work, so that the integrated exposure, development and automatic alignment focusing functions of the silicon wafer are realized.
The exposure and development method provided by the invention comprises the following steps:
s1: the workpiece transmission system 4 sends the substrate coated with the glue into the exposure system 1 for local exposure; specifically, the wafer taking station 42 in the workpiece conveying system 4 transfers the silicon wafers in the wafer box to the workpiece table 14 for local exposure.
S2: the exposed substrate is sent into a developing system 2 through a workpiece conveying system 4 for local development; specifically, the exposed substrate is sequentially transferred to the developing unit for local development through the developing station 42 in the workpiece conveying system 4, the developing cartridge 7 on the rotary table 6, and the developing and sheet taking hand 21 in the developing system 2.
S3: the workpiece transmission system 4 sends the developed substrate into the vision alignment system 3, the vision alignment system 3 shoots the substrate, and the parameters to be adjusted for the subsequent exposure are calculated according to the shot image; specifically, the developed substrate is sequentially transferred to the vision alignment system 3 through the developing and film taking hand 21, the developing film box 7 on the rotary table 6 and the film transfer station 43 in the workpiece transmission system 4, an image acquisition unit in the vision alignment system 3 shoots a silicon wafer, an image processing unit calculates parameters to be adjusted for subsequent exposure according to the shot image, and vertical control parameters are judged according to the definition of the shot image and the top/bottom CD of the dense cylinder; and judging horizontal splicing parameters and non-orthogonal parameters according to the spliced pixel deviation, and carrying out automatic focusing by an automatic focusing unit.
S4: inputting the calculated adjustment parameters into a control system, setting parameters to be adjusted by the control system, and preparing for next exposure;
s5: and repeating the steps S1-S4, carrying out next exposure on the substrate according to the calculated adjustment parameters until the set parameters meet the production requirements, and outputting the finally exposed substrate to a film box through the workpiece transmission system 4, specifically, through a film taking station 42 in the workpiece transmission system 4.
In summary, the present invention provides an exposure and development apparatus and method, the apparatus includes an exposure system 1, a development system 2, a vision alignment system 3, and a workpiece transport system 4 located between the exposure system 1, the development system 2, and the vision alignment system 3, wherein the exposure system 1 is disposed on a system frame 5, and includes an illumination unit 11, a mask stage 12, a projection unit 13, and a workpiece stage 14, which are sequentially disposed along an optical path. The invention integrates the exposure system 1 and the developing system 2 at the same time, can be used for one-time exposure to development, and can be directly sent out for later-stage etching after the development result is detected, thereby greatly reducing the manpower operation and labor cost; all PSS debugging can be automatically completed through the vision alignment system 3, including confirming the focal plane, adjusting splicing parameters and adjusting non-orthogonality, manual intervention is not needed, a self-adaptive detection adjustment technology is adopted, the anti-interference capability of the machine table is greatly enhanced, and the PSS yield is greatly improved.
Although the embodiments of the present invention have been described in the specification, these embodiments are merely provided as a hint, and should not limit the scope of the present invention. Various omissions, substitutions, and changes may be made without departing from the spirit of the invention and are intended to be within the scope of the invention.
Claims (10)
1. An exposure and development device is characterized by comprising a control system, an exposure system, a development system, a vision alignment system and a workpiece transmission system positioned between the exposure system and the development system; the exposure system is arranged on the system frame and comprises an illumination unit, a mask table, a projection unit and a workpiece table which are sequentially arranged along a light path; the vision alignment system is used for shooting an image of the substrate after the local development of the developing system, calculating parameters to be adjusted for the next local exposure of the substrate by the exposure system according to the image and carrying out automatic focusing; the exposure system is used for carrying out local exposure on the substrate coated with the glue and carrying out next local exposure on the substrate according to the calculation result of the vision alignment system; the developing system is used for carrying out local development on the substrate after the local exposure of the exposure system;
wherein, the vision alignment system calculates the parameters to be adjusted for the next local exposure of the substrate by the exposure system according to the image, and the parameters comprise: calculating a vertical control parameter which needs to be adjusted when the exposure system carries out next local exposure on the substrate according to the definition of the image and the characteristic sizes of the top and the bottom of the dense cylinder, and calculating a splicing parameter and a non-orthogonal parameter which need to be adjusted when the exposure system carries out next local exposure on the substrate according to spliced pixel deviation; the exposure system performing the next local exposure on the substrate according to the calculation result of the vision alignment system comprises: according to the vertical control parameter, the horizontal splicing parameter and the non-orthogonal parameter calculated by the vision alignment system, an exposure field required by next local exposure on the substrate is positioned under an optimal focal plane;
the control system is respectively connected with the exposure system, the development system, the vision alignment system and the workpiece transmission system and is used for controlling the exposure system, the development system, the vision alignment system and the workpiece transmission system to work in coordination so as to realize the integrated functions of local exposure, local development and automatic alignment focusing of the substrate.
2. The exposure and development apparatus according to claim 1, wherein the exposure system further comprises a stage control system connected to the stage.
3. The exposure and development apparatus according to claim 2, wherein the exposure system further comprises a vertical measurement system corresponding to the stage, and the vertical measurement system measures the surface profile of the substrate and converts it into stage control parameters, and sends the stage control parameters to the stage control system.
4. The exposure-development apparatus according to claim 1, wherein the exposure system further comprises an environmental system that controls environmental pressure, temperature, and contamination of the projection exposure area.
5. The exposure and development apparatus according to claim 1, wherein the exposure system further comprises a frame damping system provided at a bottom of the system frame.
6. The exposure and development apparatus according to claim 1, wherein the workpiece transfer system comprises a rotary robot and a pick-up station, a delivery station and a development station provided on the rotary robot.
7. The exposure and development apparatus according to claim 1, wherein the vision alignment system includes an image pickup unit, an image processing unit, and an autofocus unit.
8. The exposure and development apparatus according to claim 1, wherein the development system includes a development blade hand corresponding to the workpiece transport system and a development unit corresponding to the development blade hand.
9. The exposure-development apparatus according to claim 1, wherein a cassette rotating table is provided between the workpiece conveying system and the development system.
10. An exposure and development method of a step-by-step type using the exposure and development apparatus according to any one of claims 1 to 9, comprising the steps of:
s1: the workpiece transmission system sends the substrate into an exposure system for local exposure;
s2: the substrate after the local exposure is sent into a developing system by the workpiece transmission system for local development;
s3: the base after the local development is sent into a visual alignment system through the workpiece transmission system, the visual alignment system shoots the base, and calculates the subsequent parameters of the exposure system, which need to be adjusted, of the local exposure according to the shot image and carries out automatic focusing, wherein the parameters of the exposure system, which need to be adjusted, of the next local exposure of the base according to the image, calculated by the visual alignment system comprise: calculating a vertical control parameter which needs to be adjusted when the exposure system carries out next local exposure on the substrate according to the definition of the image and the characteristic sizes of the top and the bottom of the dense cylinder, and calculating a splicing parameter and a non-orthogonal parameter which need to be adjusted when the exposure system carries out next local exposure on the substrate according to spliced pixel deviation;
s4: inputting the calculated parameters to be adjusted into a control system, setting the parameters to be adjusted by the control system, and preparing for the next local exposure, wherein the exposure system enables an exposure field required by the next local exposure on the substrate to be under an optimal focal plane according to the vertical control parameters, the horizontal splicing parameters and the non-orthogonal parameters calculated by the vision alignment system;
s5: and repeating the steps S1-S4, carrying out next local exposure on the substrate until the set parameters meet the production requirements, and outputting the finally exposed substrate through a workpiece transmission system.
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| CN201710527269.9A CN109212916B (en) | 2017-06-30 | 2017-06-30 | Exposure developing device and method |
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| CN201710527269.9A CN109212916B (en) | 2017-06-30 | 2017-06-30 | Exposure developing device and method |
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| CN112799282A (en) * | 2020-12-30 | 2021-05-14 | 六安优云通信技术有限公司 | Wafer photoetching, developing and etching device for manufacturing power supply chip and preparation process thereof |
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| EP1477851A1 (en) * | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Device manufacturing method and lithographic apparatus |
| JP2007184378A (en) * | 2006-01-05 | 2007-07-19 | Canon Inc | Method and device for obtaining position of substrate for luminous exposure and/or focusing in exposure system |
| JPWO2008038751A1 (en) * | 2006-09-28 | 2010-01-28 | 株式会社ニコン | Line width measurement method, image formation state detection method, adjustment method, exposure method, and device manufacturing method |
| CN101894756B (en) * | 2009-05-22 | 2012-07-18 | 中芯国际集成电路制造(北京)有限公司 | Groove formation method, metal wire formation method, photoetching method and equipment |
| CN102736422B (en) * | 2011-03-31 | 2015-07-22 | 上海微电子装备有限公司 | Proximity field exposure device and method |
| CN102955365B (en) * | 2011-08-22 | 2014-12-17 | 上海微电子装备有限公司 | Interference exposure device and method thereof |
| US9360778B2 (en) * | 2012-03-02 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for lithography patterning |
| CN106814546B (en) * | 2015-11-30 | 2019-05-31 | 上海微电子装备（集团）股份有限公司 | Focal plane detection device, focal plane scaling method and silicon wafer exposure method |
| CN106647163B (en) * | 2017-02-09 | 2021-02-23 | 京东方科技集团股份有限公司 | Photoetching parameter adjusting method and device and mask plate |
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