CN111796490A - Scanning type exposure method based on UV-LED photoetching light source - Google Patents

Scanning type exposure method based on UV-LED photoetching light source Download PDF

Info

Publication number
CN111796490A
CN111796490A CN202010637416.XA CN202010637416A CN111796490A CN 111796490 A CN111796490 A CN 111796490A CN 202010637416 A CN202010637416 A CN 202010637416A CN 111796490 A CN111796490 A CN 111796490A
Authority
CN
China
Prior art keywords
wafer
mask
mark
light source
training
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202010637416.XA
Other languages
Chinese (zh)
Inventor
朱煜
杨开明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing U Precision Tech Co Ltd
Original Assignee
Beijing U Precision Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing U Precision Tech Co Ltd filed Critical Beijing U Precision Tech Co Ltd
Priority to CN202010637416.XA priority Critical patent/CN111796490A/en
Publication of CN111796490A publication Critical patent/CN111796490A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment

Abstract

The invention discloses a scanning type exposure method based on a UV-LED photoetching light source, which comprises the following steps: using a UV-LED light source as a photoetching light source to form a slit exposure field with uniformly distributed light intensity; aligning the mask mark with the wafer mark by a mask alignment system; collimating the light beams emitted from the UV-LED light source through a micro-lens array, and forming slit exposure spots on the surface of a mask; the mask pattern is transferred to the photoresist-coated wafer by scanning exposure. The invention can complete the exposure of several times of the area of the slit light source by single scanning, thereby improving the exposure efficiency.

Description

Scanning type exposure method based on UV-LED photoetching light source
Technical Field
The invention relates to the technical field of semiconductors, in particular to an exposure method of a photoetching machine.
Background
Exposure is an essential process in the micro-machining process and also a critical step in the photolithography process. With the development of semiconductor technology, the requirements for exposure are also increasing. The existing exposure method usually adopts a parallel light amplitude surface irradiation method, and the exposure uniformity is difficult to adjust, so that the exposure efficiency is low.
Disclosure of Invention
In view of the above problems, the present invention provides a scanning exposure method based on a UV-LED lithography light source, comprising:
using a UV-LED light source as a photoetching light source to form a slit exposure field with uniformly distributed light intensity;
aligning the mask mark with the wafer mark by a mask alignment system;
collimating the light beams emitted from the UV-LED light source through a micro-lens array, and forming slit exposure spots on the surface of a mask;
the mask pattern is transferred to the photoresist-coated wafer by scanning exposure.
Preferably, the step of aligning the mask mark with the wafer mark by the mask alignment system comprises:
mounting a mask on a mask stage and a wafer on a wafer stage, wherein the wafer stage comprises: the device comprises an XY motion table, a Z-axis wafer chuck, a vacuum chuck and a pneumatic cylinder, wherein the vacuum chuck is arranged on the XY motion table, the Z-axis wafer chuck is used for being clamped at the periphery of a wafer, and the pneumatic cylinder is used for adsorbing the wafer on the vacuum chuck;
determining the position of the mask through the movement of the mask workpiece stage;
searching a mask mark on a mask and a wafer mark on a wafer through a microscope group, and acquiring a central position coordinate of the mask mark and a central position coordinate of the wafer mark;
and controlling the XY motion table to move according to the coordinates of the center positions of the mask mark and the wafer mark, and driving the wafer to move so that the mask mark and the wafer mark are coincided.
Preferably, the method for controlling the XY motion stage to move according to the coordinates of the center positions of the mask mark and the wafer mark to drive the wafer to move so that the mask mark and the wafer mark coincide includes:
controlling the XY motion table to do plane motion in the XY plane so as to ensure that the Euclidean distance between the central point of the wafer mark and the central point of the mask mark
Figure BDA0002568922070000021
Wherein (x)1，y1) Is the center position coordinate of the mask mark, (x)2，y2) Marking the center position coordinates of the wafer;
and controlling the XY motion table to rotate around the Z axis, so that the rotation angle theta of the wafer mark relative to the horizontal line is equal to 0.
Preferably, the microscope group comprises an upper objective lens and a lower objective lens, and the wafer mark on the wafer and the center position coordinate of the wafer mark are acquired through the upper objective lens; and acquiring a mask mark on a mask and the center position coordinate of the mask mark through the lower objective lens.
Preferably, the step of aligning the mask mark with the wafer mark by the mask alignment system further comprises: the coincidence of the mask mark and the wafer mark is calibrated by the image processing system.
Preferably, the image processing system performs alignment pattern recognition by calibrating overlay of the mask mark and the wafer mark, including:
acquiring an alignment pattern template obtained through training, wherein the alignment pattern refers to a pattern obtained after aligning a mask mark and a wafer mark;
setting operation parameters, wherein the operation parameters comprise an area range to be searched, an image scaling size and an acceptance threshold value for stopping searching;
traversing in the range of the area to be searched to obtain a plurality of images to be searched;
matching the images to be searched with the alignment pattern template one by one through a neural network algorithm, and obtaining the matching degree;
and arranging the acquired matching degrees in the order from high to low, and identifying the alignment pattern.
Preferably, while the alignment pattern is obtained by the recognition module, one or more of a matching degree, X, Y directional coordinates of the center of the alignment pattern, a rotation angle, a fitting error, a target coverage, a clutter ratio, and a scaling are enumerated.
Preferably, acquiring the trained alignment pattern template comprises training an alignment pattern, the step of training an alignment pattern comprising:
acquiring a real alignment pattern on a wafer, and setting the real alignment pattern as a training area;
setting an original point and a coordinate system of a training area;
dividing the training area into a plurality of local training areas;
setting training parameters including a training mode, selection of a local training area and display of a feature extraction result;
training each local training area, wherein each local training area at least stores a template obtained from training data;
and evaluating the trained characteristics, and judging whether the template granularity size obtained by training can be used for target identification and positioning.
Preferably, the step of aligning the mask mark with the wafer mark by the mask alignment system further comprises: and displaying the center position coordinates of the mask mark, the center position coordinates of the wafer mark, and the alignment pattern when the mask mark and the wafer mark are aligned through a human-computer interface.
Preferably, the step of transferring the mask pattern onto the photoresist-coated wafer by scanning exposure comprises:
the mask workpiece stage is driven to move by the first driving mechanism, the wafer workpiece stage is driven to move by the second driving mechanism, and the moving direction of the mask workpiece stage is opposite to that of the wafer workpiece stage;
and scanning the exposure mask and the wafer until the required exposure area is scanned and exposed.
Compared with the prior art, the invention has the following advantages and beneficial effects:
the invention uses the UV-LED light source as the photoetching light source, has high light source luminous efficiency, low energy consumption and long service life, and does not need to be preheated when in use; moreover, the light intensity of the exposure field is uniformly distributed without shaping, thereby improving the efficiency.
The micro-lens array is used for replacing a laser collimation light path, so that the optical system is simple and efficient; moreover, the invention can realize the alignment precision of the submicron mask and lay a foundation for realizing high-precision photoetching;
the invention can complete the exposure of several times of the area of the slit light source by single scanning, thereby improving the exposure efficiency.
Drawings
FIG. 1 is a schematic flow chart of a scanning exposure method based on a UV-LED photoetching light source according to the invention;
FIG. 2 is a schematic diagram of a UV-LED lithography light source based lithography machine according to the present invention;
FIG. 3 is a schematic diagram of a UV-LED light source and microlens array according to the present invention;
FIGS. 4 a-4 c are schematic views of a microscope set, a mask and a wafer, respectively, in different states according to the present invention;
FIG. 5 is a schematic representation of the present invention before alignment of the mask mark and the wafer mark;
FIG. 6 is a schematic view of an alignment pattern for alignment of mask marks and wafer marks in accordance with the present invention;
fig. 7 is a schematic view of the scanning motion in the present invention.
Detailed Description
The embodiments of the present invention will be described below with reference to the accompanying drawings. Those of ordinary skill in the art will recognize that the described embodiments can be modified in various different ways, or combinations thereof, without departing from the spirit and scope of the present invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Furthermore, in the present description, the drawings are not to scale and like reference numerals refer to like parts.
Fig. 1 is a schematic flow chart of the scanning exposure method based on the UV-LED lithography light source of the present invention, and as shown in fig. 1, the scanning exposure method based on the UV-LED lithography light source includes:
in step S1, the UV-LED light source 1 is used as the photolithography light source to form a slit exposure field with uniformly distributed light intensity. The UV-LED is an ultraviolet light emitting diode, the UV-LED light source 1 is used as a photoetching light source to replace a complex light source collimation light path in an exposure system of a photoetching machine, and the UV-LED light source 1 has the characteristics of high luminous efficiency, low energy consumption, long service life and the like, and does not need to be preheated during use, so that the exposure method disclosed by the invention is safer and more environment-friendly.
Step S2, the mask mark 51 and the wafer mark 52 are aligned by the mask alignment system, wherein the mask mark 51 is carried on the mask 3, the wafer mark 52 is carried on the wafer 4, and the mask mark 51 and the wafer mark 52 are aligned before exposure, which is beneficial to improving the precision of photolithography. In one embodiment, the outer contour of the mask mark 51 is square, the inside of the square has a hollow cross-shaped pattern, the wafer mark 52 is cross-shaped, and the alignment of the mask mark 51 with the wafer mark 52 means that the center of the square of the mask mark 51 is aligned with the center of the cross-shaped of the wafer mark 52.
Step S3, the light beam from the UV-LED light source 1 is collimated by the micro lens array 2, and a slit exposure spot is formed on the surface of the mask 3, and the size of the slit exposure spot is adjusted by the distributed UV-LED light sources 1, wherein the width of the slit is the same as the width of a single exposure field, but the length is only a small part of the length of the exposure field.
In step S4, a mask pattern is transferred onto the wafer 4 coated with the photoresist by scanning exposure. The mask pattern is carried on the mask 3, the mask pattern can be a design pattern such as an integrated circuit pattern, the wafer 4 refers to a silicon wafer for manufacturing a silicon semiconductor integrated circuit, the wafer 4 is coated with photoresist, pattern transfer is realized through exposure, the mask pattern is fixed on the wafer 4, and the mask pattern can be used for manufacturing various circuit element structures. The scanning exposure utilizes the formed single slit exposure light spot to carry out exposure instead of exposing the whole field at one time, and the single scanning can complete the exposure of several times of the area of the slit light source, thereby improving the exposure efficiency.
Fig. 2 is a schematic structural diagram of a UV-LED lithography light source-based lithography machine according to the present invention, and fig. 3 is a schematic structural diagram of a UV-LED light source and a microlens array according to the present invention, as shown in fig. 2 and 3, the lithography machine includes: UV-LED light source 1, microlens array 2, mask alignment system. Wherein, the UV-LED light source 1 is used for providing a slit exposure field with uniformly distributed light intensity; the micro lens array 2 is used for collimating the light beams emitted from the UV-LED light source 1 and forming slit exposure spots on the surface of the mask; the mask alignment system is used to align the mask marks 51 with the wafer marks 52 before exposure (a plurality of alignment marks 55, including the mask marks 51 and the wafer marks 52, are shown in fig. 2, and only the mask marks 51 and the wafer marks 52 are schematically shown in the figure, and are not used to define the specific shapes of the mask marks 51 and the wafer marks 52).
The mask alignment system includes: the mechanical system comprises a mask workpiece table for mounting a mask 3, a wafer workpiece table for mounting a wafer 4, a first driving mechanism for driving the mask workpiece table to move and a second driving mechanism for driving the wafer workpiece table to move, the mask and the wafer are arranged in parallel, the control system is used for controlling the first driving mechanism and the second driving mechanism, and the image processing system is used for calibrating the coincidence degree of the mask mark 51 and the wafer mark 52. The mask alignment system is used for aligning the mask mark 51 and the wafer mark 52 before exposure, thereby realizing the alignment precision of the submicron mask and laying a foundation for realizing high-precision photoetching.
In an alternative embodiment, the control system uses a closed loop control system to receive the coordinates of the center positions of the mask mark 51 and the wafer mark 52, and control the first drive mechanism and the second drive mechanism to adjust the positions of the mask stage and the wafer stage, respectively, to align the mask mark 51 and the wafer mark 52. The first and second driving mechanisms may employ servo motors.
It should be noted that, the driving principle of the first driving mechanism for the mask stage and the driving principle of the second driving mechanism for the wafer stage are the prior art, and detailed description thereof is omitted in the present invention.
In one embodiment, the image processing system includes:
the template acquisition module is used for acquiring an alignment pattern template obtained through training, wherein the alignment pattern refers to a pattern obtained after aligning a mask mark and a wafer mark;
the parameter setting module is used for setting operation parameters, wherein the operation parameters comprise an area range to be searched, an image zooming size and an acceptance threshold value for stopping searching (namely image searching is carried out within the acceptance threshold value range);
the image acquisition module is used for traversing in the range of the area to be searched to obtain a plurality of images to be searched, wherein the images to be searched refer to images included in the area to be searched;
the matching module is used for matching the images to be searched with the alignment pattern template one by one through a neural network algorithm and acquiring the matching degree; for example, the similarity may be obtained by calculating the similarity of the images, and specifically, the similarity calculation method may use the euclidean distance, the manhattan distance, the chebyshev distance, the cosine distance, and the like to measure the similarity of the two images, which is not described in detail herein;
and the identification module is used for arranging the acquired matching degrees in a high-to-low order and identifying the alignment pattern.
Further, while the alignment pattern is obtained by the recognition module, parameters such as matching degree, X, Y direction coordinates of the center of the alignment pattern, rotation angle, fitting error, target coverage, speckle ratio, scaling ratio, and the like can be listed.
In one embodiment, the image processing system further comprises a template training module for training the alignment pattern. Specifically, the template training module comprises:
a graph acquisition unit for acquiring a real alignment pattern (which can be directly obtained by shooting through a camera) on the wafer and setting the real alignment pattern as a training area;
a coordinate setting unit for setting an origin of a training area and a coordinate system, specifically, setting the center of the alignment pattern as the origin of the training area, and establishing an XY coordinate system;
the training area dividing unit is used for dividing the training area into a plurality of local training areas;
the training parameter setting unit is used for setting training parameters, wherein the setting of the training parameters refers to the selection of a training mode and a local training area, the display of a feature extraction result and the like, and the feature extraction refers to the feature extraction of a graph;
the training unit is used for training each local training area, and each local training area at least stores one template obtained from training data;
and the trained feature evaluation unit calculates the granularity of the template obtained by training and judges whether the template has enough information quantity for target recognition positioning (namely whether the template can be used as an alignment pattern template), wherein the target recognition positioning refers to the recognition of the alignment pattern.
Fig. 4a to 4c are schematic views of a microscope set, a mask and a wafer in different states, respectively, according to the present invention, and as shown in fig. 4a to 4c, the mask alignment system further includes a microscope set for acquiring center position coordinates of mask marks 51 and center position coordinates of wafer marks 52. Since the distance between the mask and the wafer is small in proximity or contact exposure, the following measurement method using upper and lower double objective lenses is adopted. Preferably, the microscope group comprises an upper objective 61 and a lower objective 62, wherein the upper objective 61 is installed above the mask 3 and used for searching and acquiring the pattern of the wafer mark 52, and the position coordinate of the center of the wafer mark 52 is acquired through the pattern of the wafer mark; the lower objective lens 62 is installed below the wafer 4, and is used for searching and acquiring a mask mark 51 pattern, and acquiring the position coordinates of the center of the mask mark 51 through the mask mark pattern. The outgoing beam passing through the lower objective 62 can search the mask mark 51 on the mask 3 already mounted in place, obtain a mask mark pattern by an image recognition method, and digitally process the obtained mask mark pattern to obtain the center position coordinates of the mask mark 51, and the lower objective 62 can transmit the center position coordinates of the mask mark 51 to the control system, so that the control system controls the second driving mechanism to adjust the position of the wafer stage according to the center position coordinates of the mask mark 51, thereby more conveniently aligning the mask mark 51 and the wafer mark 52. Similarly, the outgoing beam passing through the upper objective 61 may search for the wafer mark 52 on the wafer 4 already mounted in place, obtain the wafer mark pattern by an image recognition method, and digitally process the obtained wafer mark pattern to obtain the center position coordinates of the wafer mark 52, and the upper objective 61 may transmit the center position coordinates of the wafer mark 52 to the control system, so that the control system controls the first driving mechanism to adjust the position of the mask stage according to the center position coordinates of the wafer mark 52, thereby facilitating the alignment of the mask mark 51 and the wafer mark 52.
In fig. 2, the mask 3 and the wafer 4 are schematically illustrated, and the shape thereof is not limited.
The mask alignment system further comprises a human-machine interface for displaying the real-time position coordinates of the mask marks 51, the real-time position coordinates of the wafer marks 52, and an alignment pattern when aligning the mask marks 51 and the wafer marks 52. Fig. 6 is a schematic view of an alignment pattern when the mask mark and the wafer mark are aligned according to the present invention, in which, as shown in fig. 6, the outer contour of the mask mark 51 is square, the inside thereof has a hollow cross shape, and the wafer mark 52 has a cross shape, and the alignment means that the center of the square is aligned with the center of the cross shape of the wafer mark 52.
In the present invention, there may be a plurality of mask marks 51 and wafer marks 52, and mask marks 51 and wafer marks 52 are aligned in one-to-one correspondence.
In one embodiment, the wafer stage comprises: XY motion platform, Z axle wafer chuck, vacuum chuck and pneumatic cylinder, wherein, vacuum chuck installs on XY motion platform, and Z axle wafer chuck is used for the card at the periphery of wafer 4, and the pneumatic cylinder is used for adsorbing wafer 4 on vacuum chuck. The XY motion platform is used for moving in the XY plane, adjusts X coordinate and Y coordinate, and Z axle wafer chuck has the rotation axis of high resolution, can adjust the rotation angle of wafer 4. The movement of the XY motion stage is driven by the second driving mechanism, and the wafer adsorbed thereon is driven to move, so that the position of the wafer mark 52 can be adjusted, and the wafer mark 52 is aligned with the mask mark 51.
Preferably, the step of aligning the mask mark with the wafer mark by the mask alignment system comprises:
installing the mask 3 on a mask workpiece table, and installing the wafer 4 on a wafer workpiece table;
determining the position of the mask 3 by the movement of the mask stage;
searching a mask mark 51 on the mask 3 and a wafer mark 52 on the wafer 4 through a microscope group, and acquiring the center position coordinates of the mask mark 51 and the center position coordinates of the wafer mark 52;
and controlling the XY motion table to move according to the coordinates of the center positions of the mask mark 51 and the wafer mark 52, and driving the wafer 4 to move, so that the mask mark 51 and the wafer mark 52 are superposed.
FIG. 5 is a schematic diagram of the mask mark and wafer mark of the present invention before alignment, as shown in FIG. 5, (x)1，y1) Referring to the center position coordinates of the mask mark 51, (x)2，y2) Refers to the center position coordinates of the wafer mark 52, and θ refers to the rotation angle of the wafer mark with respect to the horizontal line. Further, controlling the XY motion stage in the wafer stage to move according to the coordinates of the center positions of the mask mark 51 and the wafer mark 52, and driving the wafer 4 to move, so that the mask mark 51 coincides with the wafer mark 52, specifically comprising: controlling the XY motion table to do plane motion in the XY plane so as to ensure that the Euclidean distance between the central point of the wafer mark and the central point of the mask mark
Figure BDA0002568922070000081
And controlling the XY motion table to rotate around the Z axis so that theta is 0.
Further, the step of aligning the mask mark 51 with the wafer mark 52 by the mask alignment system further includes: the overlay of the mask marks 51 and the wafer marks 52 is calibrated by the image processing system. The image processing system can ensure the superposition precision, thereby improving the photoetching precision.
In one embodiment, the image processing system performs alignment pattern recognition by:
acquiring an alignment pattern template obtained through training, wherein the alignment pattern refers to a pattern obtained after aligning a mask mark and a wafer mark;
setting operation parameters, wherein the operation parameters comprise the range of an area to be searched, the image scaling size and an acceptance threshold value for stopping searching (namely, image searching is carried out within the range of the acceptance threshold value);
traversing in the range of the area to be searched to obtain a plurality of images to be searched, wherein the images to be searched refer to images included in the area to be searched;
matching the images to be searched with the alignment pattern template one by one through a neural network algorithm, and obtaining the matching degree; for example, the similarity may be obtained by calculating the similarity of the images, and specifically, the similarity calculation method may use the euclidean distance, the manhattan distance, the chebyshev distance, the cosine distance, and the like to measure the similarity of the two images, which is not described in detail herein;
and arranging the acquired matching degrees in the order from high to low, and identifying the alignment pattern.
Further, while the alignment pattern is obtained by the recognition module, parameters such as matching degree, X, Y direction coordinates of the center of the alignment pattern, rotation angle, fitting error, target coverage, speckle ratio, scaling ratio, and the like can be listed.
In one embodiment, acquiring the trained alignment pattern template comprises the step of training an alignment pattern, in particular comprising:
acquiring a real alignment pattern (which can be directly shot by a camera) on a wafer, and setting the real alignment pattern as a training area;
setting an origin and a coordinate system of a training area, specifically, setting the center of the alignment pattern as the origin of the training area, and establishing an XY coordinate system;
dividing the training area into a plurality of local training areas;
setting training parameters including a training mode, selection of a local training area, display of a feature extraction result and the like, wherein the feature extraction refers to feature extraction of a graph;
training each local training area, wherein each local training area at least stores a template obtained from training data;
and evaluating the trained features, calculating the granularity of the template obtained by training, and judging whether the template has enough information quantity for target recognition positioning (namely whether the template can be used as an alignment pattern template), wherein the template granularity represents the thinning degree of the graph, the smaller the granularity is, the larger the thinning degree is, and the target recognition positioning refers to the recognition of the alignment pattern.
In one embodiment, the step of aligning mask mark 51 with wafer mark 52 by a mask alignment system further comprises: the position coordinates of the mask mark 51, the position coordinates of the wafer mark 52, and the alignment pattern when the mask mark 51 and the wafer mark 52 are aligned are displayed through a human-machine interface. The alignment of the mask mark 51 and the wafer mark 52 can be displayed more intuitively through a human-machine interface, and the control of the first driving mechanism and the second driving mechanism by the control system is facilitated.
In one embodiment, the step of transferring the mask pattern onto the photoresist-coated wafer by scanning exposure comprises:
the mask workpiece stage is driven to move by the first driving mechanism, the wafer workpiece stage is driven to move by the second driving mechanism, and the moving direction of the mask workpiece stage is opposite to the moving direction of the wafer workpiece stage during scanning exposure;
and scanning the exposure mask and the wafer until the required exposure area is scanned and exposed.
Fig. 7 is a schematic diagram of the scanning motion in the present invention, the hatched portion in fig. 7 represents the slit exposure spot 7, the arrow represents the scanning direction, and the rectangular outline represents the single exposure region 8, as shown in fig. 7, the width of the slit exposure spot is the same as the width of the exposure region, the length is only a small portion of the length of the exposure region, and the scanning direction is the width direction of the slit.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A scanning type exposure method based on a UV-LED photoetching light source is characterized by comprising the following steps:
using a UV-LED light source as a photoetching light source to form a slit exposure field with uniformly distributed light intensity;
aligning the mask mark with the wafer mark by a mask alignment system;
collimating the light beams emitted from the UV-LED light source through a micro-lens array, and forming slit exposure spots on the surface of a mask;
the mask pattern is transferred to the photoresist-coated wafer by scanning exposure.
2. The scanning exposure method based on the UV-LED lithography light source according to claim 1, wherein the step of aligning the mask mark with the wafer mark by the mask alignment system comprises:
mounting a mask on a mask stage and a wafer on a wafer stage, wherein the wafer stage comprises: the device comprises an XY motion table, a Z-axis wafer chuck, a vacuum chuck and a pneumatic cylinder, wherein the vacuum chuck is arranged on the XY motion table, the Z-axis wafer chuck is used for being clamped at the periphery of a wafer, and the pneumatic cylinder is used for adsorbing the wafer on the vacuum chuck;
determining the position of the mask through the movement of the mask workpiece stage;
searching a mask mark on a mask and a wafer mark on a wafer through a microscope group, and acquiring a central position coordinate of the mask mark and a central position coordinate of the wafer mark;
and controlling the XY motion table to move according to the coordinates of the center positions of the mask mark and the wafer mark, and driving the wafer to move so that the mask mark and the wafer mark are coincided.
3. The scanning exposure method based on the UV-LED photoetching light source as claimed in claim 2, wherein the XY moving table is controlled to move according to the coordinates of the center positions of the mask mark and the wafer mark, so as to drive the wafer to move, and the mask mark and the wafer mark are coincided, and the method comprises the following steps:
controlling the XY motion table to do plane motion in the XY plane so as to ensure that the Euclidean distance between the central point of the wafer mark and the central point of the mask mark
Figure FDA0002568922060000011
Wherein (x)1，y1) Is the coordinates of the center position of the mask mark,(x2，y2) Marking the center position coordinates of the wafer;
and controlling the XY motion table to rotate around the Z axis, so that the rotation angle theta of the wafer mark relative to the horizontal line is equal to 0.
4. The scanning exposure method based on the UV-LED photoetching light source according to the claim 2, characterized in that the microscope group comprises an upper objective lens and a lower objective lens, and the wafer mark on the wafer and the central position coordinate of the wafer mark are obtained through the upper objective lens; and acquiring a mask mark on a mask and the center position coordinate of the mask mark through the lower objective lens.
5. The scanning exposure method based on UV-LED lithography light source of claim 2, wherein the step of aligning the mask mark with the wafer mark by the mask alignment system further comprises:
the coincidence of the mask mark and the wafer mark is calibrated by the image processing system.
6. The scanning exposure method based on the UV-LED photoetching light source according to the claim 5, wherein the image processing system carries out the alignment pattern recognition by the following steps, and the coincidence degree of the mask mark and the wafer mark is calibrated, comprising the following steps:
acquiring an alignment pattern template obtained through training, wherein the alignment pattern refers to a pattern obtained after aligning a mask mark and a wafer mark;
setting operation parameters, wherein the operation parameters comprise an area range to be searched, an image scaling size and an acceptance threshold value for stopping searching;
traversing in the range of the area to be searched to obtain a plurality of images to be searched;
matching the images to be searched with the alignment pattern template one by one through a neural network algorithm, and obtaining the matching degree;
and arranging the acquired matching degrees in the order from high to low, and identifying the alignment pattern.
7. The scanning exposure method based on the UV-LED photoetching light source according to the claim 6, characterized in that, when the alignment pattern is obtained through the identification module, one or more of matching degree, X, Y direction coordinate of the center of the alignment pattern, rotation angle, fitting error, target coverage degree, speckle ratio and scaling ratio are listed.
8. The method of claim 6, wherein acquiring the trained alignment pattern template comprises training an alignment pattern, and wherein training the alignment pattern comprises:
acquiring a real alignment pattern on a wafer, and setting the real alignment pattern as a training area;
setting an original point and a coordinate system of a training area;
dividing the training area into a plurality of local training areas;
setting training parameters including a training mode, selection of a local training area and display of a feature extraction result;
training each local training area, wherein each local training area at least stores a template obtained from training data;
and evaluating the trained characteristics, and judging whether the template granularity size obtained by training can be used for target identification and positioning.
9. The scanning exposure method based on UV-LED lithography light source of claim 2, wherein the step of aligning the mask mark with the wafer mark by the mask alignment system further comprises:
and displaying the center position coordinates of the mask mark, the center position coordinates of the wafer mark, and the alignment pattern when the mask mark and the wafer mark are aligned through a human-computer interface.
10. The scanning exposure method based on the UV-LED photoetching light source according to the claim 2, wherein the step of transferring the mask pattern onto the wafer coated with the photoresist through the scanning exposure comprises the following steps:
the mask workpiece stage is driven to move by the first driving mechanism, the wafer workpiece stage is driven to move by the second driving mechanism, and the moving direction of the mask workpiece stage is opposite to that of the wafer workpiece stage;
and scanning the exposure mask and the wafer until the required exposure area is scanned and exposed.
CN202010637416.XA 2020-07-03 2020-07-03 Scanning type exposure method based on UV-LED photoetching light source Withdrawn CN111796490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010637416.XA CN111796490A (en) 2020-07-03 2020-07-03 Scanning type exposure method based on UV-LED photoetching light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010637416.XA CN111796490A (en) 2020-07-03 2020-07-03 Scanning type exposure method based on UV-LED photoetching light source

Publications (1)

Publication Number Publication Date
CN111796490A true CN111796490A (en) 2020-10-20

Family

ID=72810310

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010637416.XA Withdrawn CN111796490A (en) 2020-07-03 2020-07-03 Scanning type exposure method based on UV-LED photoetching light source

Country Status (1)

Country Link
CN (1) CN111796490A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113156775A (en) * 2021-04-27 2021-07-23 华中科技大学 Proximity type exposure light source and exposure method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113156775A (en) * 2021-04-27 2021-07-23 华中科技大学 Proximity type exposure light source and exposure method

Similar Documents

Publication Publication Date Title
CN111796489A (en) Mask alignment photoetching machine based on UV-LED (ultraviolet-light emitting diode) area array type light source
KR100377887B1 (en) Sort method
CN101576715B (en) Calibration method for microscopic imaging systems
US6724464B2 (en) Position detecting method and unit, optical characteristic measuring method and unit, exposure apparatus, and device manufacturing method
JP2004006527A (en) Position detection device and position detection method, exposure device, and device manufacturing method and substrate
TW201802616A (en) Exposure apparatus, exposure method and device manufacturing method
US20030027065A1 (en) Mask for measuring optical aberration and method of measuring optical aberration
US20230296990A1 (en) Sub-nanoscale high-precision lithography writing field stitching method, lithography system, wafer, and electron beam drift determination method
CN103286452A (en) Laser micro hole processing method and laser micro hole processing device
US6583430B1 (en) Electron beam exposure method and apparatus
CN111796488A (en) Stepping exposure method based on UV-LED photoetching light source
CN101174104B (en) Method and correlated device for confirming optimum object plane and optimum image plane of photo-etching projection device
CN115769148A (en) System and method for correcting overlay error in a lithographic process
WO2022116959A1 (en) Stepping photoetching machine and operating method therefor, and pattern alignment device
CN105093845A (en) Lithography apparatus, determination method, and method of manufacturing article
CN106933055B (en) A kind of alignment device and alignment methods
CN111796490A (en) Scanning type exposure method based on UV-LED photoetching light source
CN102736422B (en) Proximity field exposure device and method
JP5692949B2 (en) Exposure equipment
CN101957562B (en) Double-exposure method
CN214474416U (en) Stepping photoetching machine and graph alignment device
CN111694226B (en) Levelness measuring method and direct imaging device
CN212873186U (en) Sub-nanometer high-precision writing field splicing photoetching machine system
WO2021093631A1 (en) Three-dimensional micro-nano structure photoetching system and method therefor
CN104216230A (en) Coating device for cylindrical mask plate and coating method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication

Application publication date: 20201020

WW01 Invention patent application withdrawn after publication