CN111788696B - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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Publication number
CN111788696B
CN111788696B CN201980015985.6A CN201980015985A CN111788696B CN 111788696 B CN111788696 B CN 111788696B CN 201980015985 A CN201980015985 A CN 201980015985A CN 111788696 B CN111788696 B CN 111788696B
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oxide
insulator
transistor
conductor
film
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Chinese (zh)
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CN111788696A (zh
Inventor
畑勇气
枥林克明
菅尾惇平
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
CN201980015985.6A 2018-02-28 2019-02-18 半导体装置及半导体装置的制造方法 Active CN111788696B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018035554 2018-02-28
JP2018-035554 2018-02-28
PCT/IB2019/051278 WO2019166906A1 (ja) 2018-02-28 2019-02-18 半導体装置、および半導体装置の作製方法

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CN111788696A CN111788696A (zh) 2020-10-16
CN111788696B true CN111788696B (zh) 2025-04-15

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US (2) US11527657B2 (https=)
JP (3) JP7163360B2 (https=)
KR (1) KR102637406B1 (https=)
CN (1) CN111788696B (https=)
WO (1) WO2019166906A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11322442B2 (en) 2018-01-05 2022-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor with oxide semiconductor and method for manufacturing the semiconductor device
JP7163360B2 (ja) * 2018-02-28 2022-10-31 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11211461B2 (en) * 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US12068198B2 (en) 2019-05-10 2024-08-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US12477837B2 (en) * 2019-10-11 2025-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11791420B2 (en) * 2021-04-19 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for manufacturing the same
US12027632B2 (en) 2021-04-19 2024-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure with barrier and method for manufacturing the same
US11869975B2 (en) 2021-04-19 2024-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Thin-film transistors and method for manufacturing the same
US12347704B2 (en) 2021-06-11 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer alignment apparatus and method for multi-cassette load port
KR20230139545A (ko) * 2022-03-28 2023-10-05 삼성전자주식회사 반도체 소자 및 이를 포함하는 반도체 메모리 셀
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018022713A (ja) * 2015-06-19 2018-02-08 株式会社半導体エネルギー研究所 半導体装置、その作製方法、電子機器
CN111656531A (zh) * 2018-01-24 2020-09-11 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130014200A (ko) * 2011-07-29 2013-02-07 삼성전자주식회사 저항 변화 물질을 포함하는 반도체 소자 및 그 제조 방법
JP6050662B2 (ja) * 2011-12-02 2016-12-21 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
TWI569446B (zh) * 2011-12-23 2017-02-01 半導體能源研究所股份有限公司 半導體元件、半導體元件的製造方法、及包含半導體元件的半導體裝置
KR102290247B1 (ko) * 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
KR102462742B1 (ko) * 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
JP6444723B2 (ja) * 2014-01-09 2018-12-26 株式会社半導体エネルギー研究所 装置
US10361290B2 (en) 2014-03-14 2019-07-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film
KR102865410B1 (ko) * 2015-02-06 2025-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10147823B2 (en) * 2015-03-19 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20160114511A (ko) * 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
WO2016203354A1 (en) 2015-06-19 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
JP6986831B2 (ja) 2015-07-17 2021-12-22 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP6850096B2 (ja) * 2015-09-24 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法及び電子機器の作製方法
WO2017081579A1 (en) 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN105489499B (zh) * 2015-12-21 2018-12-07 武汉华星光电技术有限公司 Ltps薄膜晶体管制造方法
KR20170096956A (ko) * 2016-02-17 2017-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
US10147681B2 (en) 2016-12-09 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2019092541A1 (ja) 2017-11-09 2019-05-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7163360B2 (ja) * 2018-02-28 2022-10-31 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018022713A (ja) * 2015-06-19 2018-02-08 株式会社半導体エネルギー研究所 半導体装置、その作製方法、電子機器
CN111656531A (zh) * 2018-01-24 2020-09-11 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法

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JP2024105659A (ja) 2024-08-06
US11527657B2 (en) 2022-12-13
JP7493567B2 (ja) 2024-05-31
WO2019166906A1 (ja) 2019-09-06
JP2022183298A (ja) 2022-12-08
US20200357926A1 (en) 2020-11-12
JPWO2019166906A1 (ja) 2021-02-18
JP7163360B2 (ja) 2022-10-31
CN111788696A (zh) 2020-10-16
KR102637406B1 (ko) 2024-02-15
US11908949B2 (en) 2024-02-20
US20230109174A1 (en) 2023-04-06
KR20200126987A (ko) 2020-11-09

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