CN111788670A - Bipolar electrostatic chuck having electrodes on portions thereof - Google Patents
Bipolar electrostatic chuck having electrodes on portions thereof Download PDFInfo
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- CN111788670A CN111788670A CN201980015431.6A CN201980015431A CN111788670A CN 111788670 A CN111788670 A CN 111788670A CN 201980015431 A CN201980015431 A CN 201980015431A CN 111788670 A CN111788670 A CN 111788670A
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- upper dielectric
- electrostatic chuck
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Abstract
A bipolar electrostatic chuck is disclosed. The bipolar electrostatic chuck includes: a base; a lower dielectric layer formed on an entire upper surface of the base; an edge electrode part formed on an upper side of the lower dielectric layer along the edge, the edge electrode part including a first electrode and a second electrode spaced apart from the first electrode and having a polarity different from a polarity of the first electrode; and an upper dielectric layer formed on the lower dielectric layer and an upper side of the edge electrode part, wherein, in a plan view, the bipolar electrostatic chuck is divided into an edge electrode forming region and a central region, the edge electrode forming region corresponds to a region from the edge to the edge electrode part, and the central region corresponds to a region other than the edge electrode forming region.
Description
Technical Field
The present disclosure relates to bipolar electrostatic chucks and, more particularly, to bipolar electrostatic chucks that hold large area substrates using electrostatic forces.
Background
A wafer or a substrate (e.g., a glass substrate) as an object to be processed is subjected to various processing procedures such as etching, CVD, sputtering, ion implantation, ashing, and/or vapor deposition in a process of manufacturing a semiconductor, a display panel, or the like. In this case, it is necessary to stably hold the object to be processed, and a mechanical chuck or a vacuum chuck may be used for this purpose, but an electrostatic chuck is also widely used.
An electrostatic chuck (ESC) uses electrostatic force between two objects having different potentials. A conventional general electrostatic chuck is configured to have a structure including a metal plate, a dielectric layer stacked on an upper side of the metal plate via an organic adhesive such as a silicone resin, and an electrode formed in the dielectric layer.
An electrostatic chuck in which an electrode having a single polarity is formed in a dielectric layer is called a unipolar electrostatic chuck (unipolar ESC or unipolar ESC), and an electrostatic chuck in which an electrode having two polarities different from each other is called a bipolar electrostatic chuck (bipolar ESC).
Meanwhile, as wafers or glass substrates have recently become larger, electrostatic chucks have also become larger, and a method of forming a dielectric layer and an electrode using plasma spraying has been used in the manufacture of the electrostatic chucks.
Clamping force is one of the first factors considered in the manufacture of electrostatic chucks. When the supplied electric energy (the amount of charge accumulation) is the same, the electrostatic force increases as the area of the electrode increases. Therefore, in the conventional electrostatic chuck, the electrode is made to occupy a large proportion of the total area of the electrostatic chuck.
This trend occurs in both conventional unipolar electrostatic chucks and bipolar electrostatic chucks. In particular, in a bipolar electrostatic chuck, electrodes are formed on the entire area of the electrostatic chuck, and this tendency becomes more pronounced.
However, as the area of the electrostatic chuck becomes larger, when the specific gravity and the position of the region where the electrode is formed are not carefully considered, the overall cost of manufacturing the electrostatic chuck increases and an unduly large clamping force that may cause damage to the wafer or substrate may be applied to the wafer or substrate.
In addition, when a substrate is processed using an electrostatic chuck having a large area, there is a high possibility of occurrence of stains due to temperature deviation or potential difference in a process chamber, and it is required to develop an electrostatic chuck capable of solving such a problem.
Documents of the prior art
Patent document 1: korean patent No. 10-1797927 (registration of 11/9/2017).
Patent document 2: korean patent No. 10-1775135 (registration of 30/8/2017).
Disclosure of Invention
Technical problem
The invention of the present disclosure is to provide a bipolar electrostatic chuck capable of providing a proper holding force while reducing manufacturing costs and avoiding stains on a substrate during a substrate processing process.
Technical scheme
To achieve the above-described invention, a bipolar electrostatic chuck for holding a large area substrate is provided, particularly wherein each side of the large area substrate has a dimension of 2000mm or greater. The bipolar electrostatic chuck may include: a base; a lower dielectric layer formed on an upper surface of the base, specifically, on the entire upper surface of the base; an edge electrode part formed on an upper side of the lower dielectric layer along an edge (rim), the edge electrode part including a first electrode and a second electrode spaced apart from the first electrode and having a polarity different from a polarity of the first electrode; and an upper dielectric layer formed on the lower dielectric layer and an upper side of the edge electrode part, wherein, in a plan view, the bipolar electrostatic chuck is divided into an edge electrode forming region and a center region, the edge electrode forming region corresponds to a region from a corner to the edge electrode part, and the center region corresponds to a region other than the edge electrode forming region.
In the bipolar electrostatic chuck according to the present disclosure, the area (a) of the edge electrode forming region may be in a range of 20% to 35% of the total area of the bipolar electrostatic chuck.
The bipolar electrostatic chuck according to the present disclosure may further include a center electrode part formed in a certain center on an upper side of the lower dielectric layer, and including a third electrode and a fourth electrode spaced apart from the third electrode and having a polarity different from that of the third electrode, wherein the upper dielectric layer may be formed on upper sides of the lower dielectric layer, the edge electrode part, and the center electrode part, and an area (B) of a center electrode forming region defined by an outer boundary of the center electrode part may be in a range of 2% to 5% of a total area of the bipolar electrostatic chuck in a plan view.
In the bipolar electrostatic chuck according to the present disclosure, when the total area is in the range of 2200mm 2500mm to 3100mm 3400mm, the edge electrode forming region may have a width of 200mm, and the center electrode forming region may have an area of 300 mm.
In the bipolar electrostatic chuck according to the present disclosure, the upper dielectric layer may include a first upper dielectric layer formed on the edge electrode portion and a second upper dielectric layer connected to the lower dielectric layer in the central region, and the first upper dielectric layer may have a dielectric constant higher than that of the second upper dielectric layer or a specific resistance value smaller than that of the second upper dielectric layer.
In the bipolar electrostatic chuck according to the present disclosure, the upper dielectric layer may include a first upper dielectric layer formed on the edge electrode part, a second upper dielectric layer connected to the lower dielectric layer in the central region, and a third dielectric layer formed on the upper side of the center electrode part, wherein the first upper dielectric layer and the third upper dielectric layer have a dielectric constant higher than that of the second upper dielectric layer or have a specific resistance value lower than that of the second upper dielectric layer.
In the bipolar electrostatic chuck according to the present disclosure, the upper dielectric layer may include a fourth upper dielectric layer connected to the lower dielectric layer in the central region, and a fifth upper dielectric layer formed on the edge electrode portion and an upper side of the fourth upper dielectric layer, wherein the fifth upper dielectric layer may have a dielectric constant higher than that of the fourth upper dielectric layer or a specific resistance value smaller than that of the fourth upper dielectric layer.
In the bipolar electrostatic chuck according to the present disclosure, the upper dielectric layer may include a fourth upper dielectric layer connected to the lower dielectric layer in the central region, and a sixth upper dielectric layer formed on upper sides of the edge electrode part, the central electrode part, and the fourth upper dielectric layer, wherein the sixth upper dielectric layer may have a dielectric constant higher than that of the fourth upper dielectric layer or a specific resistance value smaller than that of the fourth upper dielectric layer.
In the bipolar electrostatic chuck according to the present disclosure, the upper dielectric layer may include a first recess portion to serve as a boundary between the edge electrode forming region and the central region and having a recess upper surface, and a second recess portion extending across the central region and having a recess upper surface.
In the bipolar electrostatic chuck according to the present disclosure, the upper dielectric layer may include a first recess portion to serve as a boundary between the edge electrode forming region and the central region and having a recess upper surface, a second recess portion extending across the central region and having a recess upper surface, and a third recess portion to serve as a boundary between the central region and the central electrode forming region and having a recess upper surface.
In the bipolar electrostatic chuck according to the present disclosure, the second upper dielectric layer may be made of Al2O3And the first and third upper dielectric layers are formed with Al added with at least one particle selected from the group consisting of2O3And forming: TiC, TiO2、Cr2O3、MnO2、COCAnd CuO.
In the bipolar electrostatic chuck according to the present disclosure, the first, second and third upper dielectric layers may have a surface roughness (Ra) of 2 to 3.5 μm or 0.8 μm.
Technical effects
According to the present disclosure, it is possible to provide a bipolar electrostatic chuck capable of optimizing functions while reducing manufacturing costs and capable of avoiding stains occurring due to temperature variations or potential differences during a process of manufacturing a substrate.
Drawings
Fig. 1A is a plan view schematically illustrating a bipolar electrostatic chuck according to an embodiment of the present disclosure;
FIG. 1B is a cross-sectional view schematically illustrating the bipolar electrostatic chuck of FIG. 1A;
fig. 2A is a plan view schematically illustrating a bipolar electrostatic chuck according to another embodiment of the present disclosure;
fig. 2B is a cross-sectional view schematically illustrating the bipolar electrostatic chuck of fig. 2A;
fig. 3A and 3B are cross-sectional views schematically illustrating a bipolar electrostatic chuck according to yet another embodiment of the present disclosure; fig. 4A is a perspective view schematically illustrating a bipolar electrostatic chuck according to yet another embodiment of the present disclosure;
FIG. 4B is a cross-sectional view schematically illustrating the bipolar electrostatic chuck of FIG. 4A;
fig. 5A is a perspective view schematically illustrating a bipolar electrostatic chuck according to yet another embodiment of the present disclosure;
fig. 5B is a cross-sectional view schematically illustrating the bipolar electrostatic chuck of fig. 5A.
Description of the reference numerals
1: bipolar electrostatic chuck, 10: a base seat is arranged on the base seat,
20: lower dielectric layer, 30: the edge electrode part is provided with a plurality of edge electrodes,
31: first electrode, 32: a second electrode for applying a second voltage to the substrate,
40: a central electrode portion; 41: a third electrode; 42: a fourth electrode; 50: an upper dielectric layer; 51: a first upper dielectric layer; 52: a second upper dielectric layer;
53: third upper dielectric layer, 54: a fourth upper dielectric layer, a second dielectric layer,
55: fifth upper dielectric layer, 56: a sixth upper dielectric layer, the second dielectric layer,
57: a first recessed portion; 58: a second recessed portion; 59: a third recessed portion; t1: an edge electrode forming region;
t2: center electrode formation region, T3: central region
Detailed Description
Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, in the following description of the present disclosure, a description of known functions or configurations will be omitted in order to clarify the gist of the present disclosure.
Fig. 1A and 1B show a plan view (fig. 1A) and a sectional view (fig. 1B) schematically illustrating a bipolar electrostatic chuck 1 according to an embodiment of the present disclosure, and fig. 2A and 2B show a plan view (fig. 2A) and a sectional view (fig. 2B) schematically illustrating a bipolar electrostatic chuck 1 according to another embodiment of the present disclosure.
Fig. 1A to 2B are schematic and partially exaggerated in order to illustrate technical features of the bipolar electrostatic chuck 1 according to the present disclosure, and are also the same in fig. 3A to 5B. The bipolar electrostatic chuck 1 according to the present disclosure has the technical features described in the present disclosure, and of course, various shapes, patterns, specifications, and the like may be formed.
According to the present disclosure regarding the electrostatic chuck 1, the bipolar electrostatic chuck has an electrode on a portion of the bipolar electrostatic chuck (hereinafter referred to as "bipolar electrostatic chuck 1") while being configured to hold a wafer or substrate of an object to be processed in a process of manufacturing a semiconductor or a display panel using an electrostatic force, and is suitable for holding a large-area substrate bipolar electrostatic chuck 1, particularly for holding a large-area substrate constituting an Organic Light Emitting Diode (OLED) display panel.
The bipolar electrostatic chuck 1 according to the present disclosure includes a base 10, a lower dielectric layer 20, electrode portions (an edge electrode portion 30 and a center electrode portion 40), and an upper dielectric layer 50. Hereinafter, the side where the base 10 is formed will be referred to as a lower side, and the side where the upper dielectric layer 50 is formed will be referred to as an upper side.
The bipolar electrostatic chuck 1 according to the present disclosure may include a base 10, a lower dielectric layer 20, an edge electrode portion 30, and an upper dielectric layer 50 (see fig. 1B), which are laminated in a vertical direction. Alternatively, the bipolar electrostatic chuck 1 may include a base 10, a lower dielectric layer 20, an edge electrode part 30, a center electrode part 40, and an upper dielectric layer 50 (see fig. 2B), which are laminated in a vertical direction.
In recent years, the demand for large-area displays has steadily increased, and there is also a need for an increase in the size of glass substrates in order to improve the chamfering rate (chamfering rate) during the manufacture of display panels. The size of the substrate used to manufacture the display panel may be classified by generations. For example, the substrate for the 8 th generation panel may have a size of 2200mm 2500mm, the substrate for the 10 th generation panel may have a size of 2940 mm 3340mm, and the substrate for the 11 th generation panel may have a size of 3000 mm 3320 mm.
The bipolar electrostatic chuck 1 of the present disclosure for holding such a large-area substrate S (substrate having a length of 2000mm or more on each side thereof) is also required to be large, and the total area (see fig. 1A and 2A) may have a size of 2200mm 2500mm or more (d1 d2) in a plan view, or may be in a range of 2200mm 2500mm to 3100mm 3400 mm. In particular, the bipolar electrostatic chuck 1 of the present disclosure may have a size of 2980mm 3280 mm.
The base 10 may be made of various materials ensuring sufficient mechanical rigidity, and is preferably made of a metal material. In particular, the base 10 may be made of aluminum, stainless steel, or the like. The base 10 is in the form of a rectangular plate as a whole.
The lower dielectric layer 20 may be formed on the entire upper surface of the base 10, and may be laminated and bonded to the base 10. The lower dielectric layer 20 forms an insulating layer between the base 10 and the electrode portions (the edge electrode portion 30 and the center electrode portion 40). The lower dielectric layer 20 may be formed of various dielectric materials having insulating properties, and may be formed of a ceramic material. In this case, the lower dielectric layer 20 may be formed by a plasma spraying method, a sol-gel methodOr the like is formed on the upper surface of the base 10. More particularly, the lower dielectric layer 20 may be made of a material or combination selected from the following: al (Al)2O3、Y2O3、ZrO2、MgO、SiC、AlN、Si3N4And SiO2. Specifically, the lower dielectric layer 20 may be made of Al2O3And (4) preparing.
The edge electrode portion 30 may be made of a conductor, in particular, tungsten. The edge electrode part 30 is electrically connected to a separately provided DC power supply. The formation of the DC power source and the connection of the DC power source to the electrode portions (the edge electrode portion 30 and the center electrode portion 40) can be carried out by various known methods.
The edge electrode part 30 is divided into a first electrode 31 and a second electrode 32, separated from each other, and may have different polarities during the supply of electric power by the DC power source. That is, when a positive (+) polarity is applied to the first electrode 31, a negative (-) polarity is applied to the second electrode 32.
The edge electrode portion 30 is formed on the upper side of the lower dielectric layer 20, and may be formed by plasma spraying or the like. In this case, the first electrode 31 and the second electrode 32 forming the edge electrode part 30 may be formed of various known patterns.
The upper dielectric layer 50 is formed on the upper sides of the lower dielectric layer 20 and the edge electrode 30, and is laminated and bonded to the lower dielectric layer 20 and the edge electrode portion 30. The upper dielectric layer 50 constitutes the entire upper surface of the bipolar electrostatic chuck 1, and the upper surface of the upper dielectric layer 50 is in contact with the substrate S. With the formation of the upper dielectric layer 50, the edge electrode portion 30 is buried between the lower dielectric layer 20 and the upper dielectric layer 50.
The upper dielectric layer 50 may be formed of various dielectric materials having insulating properties, and may be formed of a ceramic material. In this case, the upper dielectric layer 50 may be formed on the upper sides of the lower dielectric layer 20 and the edge electrode part 30 by a plasma spray method, a sol-gel method, or the like. The upper dielectric layer 50 may be made of the same material and by the same method as the lower dielectric layer 20.
The upper dielectric layer 50 is preferably formed to have a uniform deposition height and surface roughness over the entire area thereof. In particular, the surface roughness Ra of the upper dielectric layer 50 may have any value in the range of 2 to 3.5 μm, or a value of 0.8 μm.
In the present disclosure, the edge electrode portion 30 is not formed on the entire area of the bipolar electrostatic chuck 1, but is formed in a partial area, particularly along the edge (rim) of the electrostatic chuck 1. In a plan view (that is, when the bipolar electrostatic chuck 1 is viewed from above), the edge electrode portion 30 is formed only at an edge portion of the bipolar electrostatic chuck 1, and is not at a central portion of the bipolar electrostatic chuck.
Accordingly, in the present disclosure, the bipolar electrostatic chuck 1 may be divided into an edge electrode forming region T1 in which the edge electrode portion 30 is formed from the edge of the bipolar electrostatic chuck 1, and a central region T3 other than the edge electrode forming region T1, and a boundary b1 between the edge electrode forming region T1 and the central region T3 is formed.
The area (a) of the edge electrode forming region T1 may be set to satisfy a range of 20% to 35% of the total area of the bipolar electrostatic chuck 1, and the width d3 of the edge electrode forming region T1 may be fixed along the entire edge of the bipolar electrostatic chuck 1.
In the present disclosure, when the total area (d1 × d2) of the bipolar electrostatic chuck is 2200mm × 2500mm to 3100mm × 3400mm, the edge electrode forming region T1 is formed to have a predetermined width d3 along the edge of the bipolar electrostatic chuck 1 by 200 mm.
With the above-described configuration, in the bipolar electrostatic chuck 1 according to the present disclosure, electrostatic force may be rapidly generated along the edge portion and no potential difference may be generated, and a uniform and stable clamping force is applied along the edge portion of the substrate S when clamping the substrate S.
As described above, since the electrode is not formed on the entire area of the bipolar electrostatic chuck 1 in the present disclosure, it is possible to provide an appropriate holding force while reducing the manufacturing cost. And the occurrence of temperature deviation or potential difference can be avoided, so that the occurrence of stains on the substrate S can be effectively avoided.
Meanwhile, as described above, the bipolar electrostatic chuck 1 according to the present disclosure may further include the center electrode portion 40 in addition to the edge electrode portion 30. In this case, the base 10, the lower dielectric layer 20, the edge electrode portion 30, and the upper dielectric layer 50 may be made of the same material and by the same method as described above. However, the upper dielectric layer 50 is formed on the upper side of the lower dielectric layer 20, the edge electrode portion 30, and the center electrode portion 40 (see fig. 2B), and is laminated on and bonded to the lower dielectric layer 20, the edge electrode portion 30, and the center electrode portion 40.
The edge electrode part 30 and the center electrode part 40 are embedded between the lower dielectric layer 20 and the upper dielectric layer 50.
The center electrode portion 40 is preferably formed in the center on the upper side of the lower dielectric layer 20, and may be made of a conductor, particularly, tungsten. The central electrode portion 40 is electrically connected to a DC power source.
The central electrode portion 40 is divided into a third electrode 41 and a fourth electrode 42, and separated from each other and having different polarities during the supply of electric power by the DC power source. That is, when a positive (+) polarity is applied to the third electrode 41, a negative (-) polarity is applied to the fourth electrode 42.
The center electrode portion 40 is formed on the upper side of the lower dielectric layer 20, and may be formed by plasma spraying or the like. In this case, the third electrode 41 and the fourth electrode 42 forming the center electrode part 40 may be formed of various known patterns.
The area (B) of the center electrode forming region T2 defined by the outer boundary B2 of the center electrode portion 40 may be set to satisfy the range of 2% to 5% of the total area (d1 × d2) of the bipolar electrostatic chuck 1 in a plan view.
In the present disclosure, when the total area of the bipolar electrostatic chuck 1 is 2200mm 2500mm to 3100mm 3400mm, the center electrode forming region T2(d4 d5) may be set to have a size of 300mm in the center of the bipolar electrostatic chuck 1.
Under this configuration, in the bipolar electrostatic chuck 1 according to the present disclosure, a uniform and stable clamping force is applied along the edge of the substrate S during clamping of the substrate S. In addition, an auxiliary chucking force acts on the central portion of the substrate S, so that the substrate S can be more stably fixed.
In this case, it is also possible to avoid occurrence of temperature deviation or potential difference, so that occurrence of stains on the substrate S in the substrate processing process can be effectively avoided.
Fig. 3A and 3B show cross-sectional views schematically illustrating a bipolar electrostatic chuck 1 according to yet another embodiment of the present disclosure. When the bipolar electrostatic chuck 1 according to the present disclosure includes the base 10, the lower dielectric layer 20, the edge electrode part 30, and the upper dielectric layer 50, the upper dielectric layer 50 may be divided into a first upper dielectric layer 51 and a second upper dielectric layer 52 (see fig. 3A).
The first upper dielectric layer 51 is a portion formed on the edge electrode portion 30, and the second upper dielectric layer 52 is a portion connected to the lower dielectric layer 20 in the central region T3.
Each of the first and second upper dielectric layers 51 and 52 may be formed of a dielectric material having an insulating property, and may be formed of a ceramic material. In this case, the first and second upper dielectric layers 51 and 52 may be formed by a plasma welding method, a sol-gel method, or the like.
The first upper dielectric layer 51 and the second upper dielectric layer 52 are formed separately, and preferably one is formed first and then the other is formed. Of course, after the first and second upper dielectric layers 51 and 52 are formed, separate surface treatment may be performed in order to secure a fixed height and surface roughness Ra of the entire upper dielectric layer 50.
In the bipolar electrostatic chuck 1 according to the present disclosure, the first upper dielectric layer 51 may have a higher dielectric constant than the second upper dielectric layer 52 or a smaller specific resistance value than the second upper dielectric layer 52. The second upper dielectric layer 52 may be made of Al2O3、Y2O3、ZrO2、MgO、SiC、AlN、Si3N4、SiO2Etc., and the first upper dielectric layer 51 may be made of TiC, TiO2、Cr2O3、MnO2At least one of CoC and CuOTo particles such as Al2O3、Y2O3、ZrO2、MgO、SiC、AlN、Si3N4Or SiO2Is made in the form of a base material. Preferably, the second upper dielectric layer 52 may be made of Al2O3Made of TiC, TiO and the first upper dielectric layer 512、Cr2O3、MnO2Al of particles of at least one of CoC and CuO2O3And (4) preparing.
Meanwhile, when the bipolar electrostatic chuck 1 according to the present disclosure includes the base 10, the lower dielectric layer 20, the edge electrode part 30, the center electrode part 40, and the upper dielectric layer 50, the upper dielectric layer 50 may be divided into a first upper dielectric layer 51, a second upper dielectric layer 52, and a third upper dielectric layer 53 (see fig. 3B).
Here, the first upper dielectric layer 51 is a portion formed on the edge electrode portion 30, the third upper dielectric layer 53 is a portion formed on the center electrode portion 40, and the second upper dielectric layer 52 is a portion connected to the lower dielectric layer 20 in the center region T3.
Each of the first, second, and third upper dielectric layers 51, 52, and 53 may be formed of a dielectric material having an insulating property, and may be formed of a ceramic material. In this case, the first upper dielectric layer 51, the second upper dielectric layer 52, and the third upper dielectric layer 53 may be formed by a plasma welding method, a sol-gel method, or the like.
The first, second and third upper dielectric layers 51, 52 and 53 may be individually formed. However, it is preferable that the first upper dielectric layer 51 and the third upper dielectric layer 53 are formed together. Of course, after the first, second and third upper dielectric layers 51, 52 and 53 are formed, separate surface treatments may be performed in order to secure a fixed height of the upper dielectric layer 50 and a surface roughness Ra.
In the bipolar electrostatic chuck 1 according to the present disclosure, the first and third upper dielectric layers 51 and 53 may have a higher dielectric constant than the second upper dielectric layer 52, or have a higher dielectric constant than the second upper dielectric layer 52The upper dielectric layer 52 has a smaller specific resistance value. The second upper dielectric layer 52 may be made of Al2O3、Y2O3、ZrO2、MgO、SiC、AlN、Si3N4、SiO2Etc., and the first and third upper dielectric layers 51 and 53 may be made of TiC, TiO2、Cr2O3、MnO2Particles formed of at least one of CoC and CuO are added to, for example, Al2O3、Y2O3、ZrO2、MgO、SiC、AlN、Si3N4Or SiO2Is made in the form of a base material. Preferably, the second upper dielectric layer 52 may be made of Al2O3And the first and third upper dielectric layers 51 and 53 may be made of TiC, TiO2、Cr2O3、MnO2Al of particles of at least one of CoC and CuO2O3And (4) preparing.
With this configuration, the electrostatic force in the edge electrode forming region T1 (or the edge electrode forming region T1 and the center electrode forming region T2) can be increased under the same power supply and electrode conditions, the possibility of charge accumulation due to leakage current in the center region T3 (the center region T3 other than the center electrode forming region T2 in the case where the center electrode forming region T2 is provided) can be reduced, and the chucking and dechucking of the substrate S can be performed more stably and efficiently.
Fig. 4A and 4B show a perspective view (fig. 4A) and a sectional view (fig. 4B) schematically illustrating the bipolar electrostatic chuck 1 according to yet another embodiment of the present disclosure, and fig. 5A and 5B show a perspective view (fig. 5A) and a sectional view (fig. 5B) schematically illustrating the bipolar electrostatic chuck 1 according to yet another embodiment of the present disclosure
When the bipolar electrostatic chuck 1 according to the present disclosure includes the base 10, the lower dielectric layer 20, the edge electrode part 30, and the upper dielectric layer 50, the upper dielectric layer 50 may be divided into a fourth upper dielectric layer 54 and a fifth upper dielectric layer 55 (see fig. 4A and 4B).
At this time, the upper dielectric layer 50 may further include a first recess portion 57 and a second recess portion 58.
The fourth upper dielectric layer 54 is a portion connected to the lower dielectric layer 20 in the central region T3, and the fifth upper dielectric layer 55 is a portion formed on the upper side of the edge electrode portion 30 and the fourth upper dielectric layer 54.
Each of the fourth upper dielectric layer 54 and the fifth upper dielectric layer 55 may be formed of a dielectric material having an insulating property, and may be formed of a ceramic material. In this case, the fourth upper dielectric layer 54 and the fifth upper dielectric layer 55 may be formed by a plasma welding method, a sol-gel method, or the like.
Of course, the fifth upper dielectric layer 55 is formed after the fourth upper dielectric layer 54 is formed, and it is preferable to form the fourth upper dielectric layer 54 having a height that is the same as or higher than the edge electrode portion 30.
In the bipolar electrostatic chuck 1 according to the present disclosure, the fifth upper dielectric layer 55 may have a higher dielectric constant than the fourth upper dielectric layer 54 or a smaller specific resistance value than the fourth upper dielectric layer 54. The fourth upper dielectric layer 54 may be made of Al4O5、Y2O3、ZrO2、MgO、SiC、AlN、Si3N4、SiO2Etc., and the fifth upper dielectric layer 55 may be made of TiC, TiO2、Cr2O3、MnO2Particles formed of at least one of CoC and CuO are added to, for example, Al2O3、Y2O3、ZrO2、MgO、SiC、AlN、Si3N4Or SiO2Is made in the form of a base material. Preferably, the fourth upper dielectric layer 54 may be made of Al2O3And the fifth upper dielectric layer 55 may be made of TiC, TiO2、Cr2O3、MnO2Al of particles of at least one of CoC and CuO2O3And (4) preparing.
The first recess portion 57 forms a boundary between the edge electrode forming region T1 and the central region T3, and forms a shape of a recess trench in an upper surface of the upper dielectric layer 50. The first recess portion 57 is preferably formed to extend to the upper end surface of the fourth upper dielectric layer 54, and the fifth upper dielectric layer 55 is physically divided into a portion of the edge electrode forming region T1 and a portion of the central region T3 along the first recess portion 57.
The second recessed portion 58 extends across the central region T3 and forms the shape of a recessed trench in the upper surface of the upper dielectric layer 50.
Further, when the bipolar electrostatic chuck 1 according to the present disclosure includes the base 10, the lower dielectric layer 20, the edge electrode part 30, the center electrode part 40, and the upper dielectric layer 50, the upper dielectric layer 50 may be divided into a fourth upper dielectric layer 54 and a sixth upper dielectric layer 56 (see fig. 5A and 5B).
At this time, the upper dielectric layer 50 may further include a first recess portion 57, a second recess portion 58, and a third recess portion 59.
As described above, the fourth upper dielectric layer 54 is a portion connected to the lower dielectric layer 20 in the central region T3, and the sixth upper dielectric layer 56 is a portion formed on the upper sides of the edge electrode portion 30, the center electrode portion 40, and the fourth upper dielectric layer 54.
Each of the fourth upper dielectric layer 54 and the sixth upper dielectric layer 56 may be formed of a dielectric material having an insulating property, and may be formed of a ceramic material. In this case, the fourth upper dielectric layer 54 and the sixth upper dielectric layer 56 may be formed by a plasma welding method, a sol-gel method, or the like.
Of course, the sixth upper dielectric layer 56 is formed after the fourth upper dielectric layer 54 is formed, and it is preferable to form the fourth upper dielectric layer 54 having a height that is the same as or higher than the heights of the edge electrode portion 30 and the center electrode portion 40.
In the bipolar electrostatic chuck 1 according to the present disclosure, the sixth upper dielectric layer 56 may have a higher dielectric constant than the fourth upper dielectric layer 54 or a smaller specific resistance value than the fourth upper dielectric layer 54, and the sixth upper dielectric layer 56 may be made of the same material as the fifth upper dielectric layer 55 as described above.
The first recess portion 57 forms a boundary between the edge electrode forming region T1 and the central region T3, and forms a shape of a recess trench in an upper surface of the upper dielectric layer 50. The first recess portion 57 is preferably formed to extend to the upper end surface of the fourth upper dielectric layer 54, and the sixth upper dielectric layer 56 is physically divided into a portion of the edge electrode forming region T1 and a portion of the central region T3 along the first recess portion 57.
The second recessed portion 58 extends across the central region T3 and forms the shape of a recessed trench in the upper surface of the upper dielectric layer 50.
The third recessed portion 59 forms a boundary between the central region T3 and the central electrode forming region T2, and forms the shape of a recessed trench in the upper surface of the upper dielectric layer 50. The third recessed portion 59 is preferably formed so as to extend to the upper end surface of the fourth upper dielectric layer 54, and along the third recessed portion 59, the sixth upper dielectric layer 56 is physically divided into a portion of the central region T3 and a portion of the central electrode forming region T2.
With this configuration, the electrostatic force in the edge electrode forming region T1 (or the edge electrode forming region T1 and the center electrode forming region T2) can be improved under the same power supply and electrode conditions, the possibility of charge accumulation due to leakage current in the center region T3 (in the case where the center electrode forming region T2 is provided, the center region T3 other than the center electrode forming region T2) can be reduced, and chucking and dechucking of the substrate S can be carried out more efficiently.
Since the upper dielectric layer 50 includes the first concave portion 57 and the second concave portion 58, or includes the first concave portion 57, the second concave portion 58, and the third concave portion 59, stains occurring due to temperature changes can be more effectively prevented, and the concave portions can help smooth action of filling the insulating gas such as helium gas in the space between the substrate S and the bipolar electrostatic chuck 1.
Although specific embodiments of the present disclosure have been described and illustrated above, it will be apparent to those skilled in the art that the present disclosure is not limited to the disclosed embodiments, and various changes and modifications may be made without departing from the technical concept and scope of the present disclosure. Therefore, such modifications and changes should not be construed as being separated from the technical spirit and the view of the present disclosure, and should be construed as falling within the scope of the claims of the present disclosure.
Industrial applicability
According to the bipolar electrostatic chuck having the electrode on a portion thereof according to the present disclosure, it is possible to provide the bipolar electrostatic chuck having an optimized function of reducing the manufacturing cost and being capable of avoiding stains occurring due to temperature variation or potential difference during the manufacturing process of the substrate. In this regard, because the present disclosure overcomes the limitations of the prior art, the devices to which the present disclosure applies will have an opportunity to be commercially available or to be sold without being limited to devices using the related art of the present disclosure. Moreover, it is apparent that the present disclosure may be carried out in practice. Thus, the present disclosure may be used industrially.
Claims (11)
1. A bipolar electrostatic chuck for holding a large area substrate having sides with dimensions of 2000mm or greater, the bipolar electrostatic chuck comprising:
a base;
a lower dielectric layer formed on an entire upper surface of the base;
an edge electrode part formed on an upper side of the lower dielectric layer along an edge, the edge electrode part including a first electrode and a second electrode spaced apart from the first electrode and having a polarity different from that of the first electrode; and
an upper dielectric layer formed on the lower dielectric layer and an upper side of the edge electrode part,
wherein, in a plan view, the bipolar electrostatic chuck is divided into an edge electrode forming region corresponding to a region from an edge to the edge electrode portion and a central region corresponding to a region other than the edge electrode forming region, and an area (a) of the edge electrode forming region is in a range of 20% to 35% of a total area of the bipolar electrostatic chuck.
2. The bipolar electrostatic chuck of claim 1, further comprising:
a center electrode portion formed in a center on the upper side of the lower dielectric layer and including a third electrode and a fourth electrode spaced apart from the third electrode and having a polarity different from a polarity of the third electrode,
wherein the upper dielectric layer is formed on an upper side of the lower dielectric layer, the edge electrode portion, and the center electrode portion, and an area (B) of a center electrode formation region defined by an outer boundary of the center electrode portion is in a range of 2% to 5% of the total area of the bipolar electrostatic chuck in the plan view.
3. A bipolar electrostatic chuck for holding a large area substrate having sides with dimensions of 2000mm or greater, the bipolar electrostatic chuck comprising:
a base;
a lower dielectric layer formed on an entire upper surface of the base;
an edge electrode part formed on an upper side of the lower dielectric layer along an edge, the edge electrode part including a first electrode and a second electrode spaced apart from the first electrode and having a polarity different from that of the first electrode;
a center electrode portion formed in a center on the upper side of the lower dielectric layer and including a third electrode and a fourth electrode spaced apart from the third electrode and having a polarity different from a polarity of the third electrode; and
an upper dielectric layer formed on upper sides of the lower dielectric layer, the edge electrode part, and the center electrode part,
wherein, in a plan view, the bipolar electrostatic chuck is divided into an edge electrode forming region corresponding to a region from an edge to the edge electrode part, a center electrode forming region defined by an outer boundary of the center electrode part, and a center region corresponding to a region other than the edge electrode forming region and the center electrode forming region, wherein the edge electrode forming region has a width of 200mm and the center electrode forming region has an area of 300mm when the total area is in a range of 2200mm 2500mm to 3100mm 3400 mm.
4. The bipolar electrostatic chuck of claim 1, wherein the upper dielectric layer comprises:
a first upper dielectric layer formed on the edge electrode portion; and
a second upper dielectric layer connected to the lower dielectric layer in the central region, and
wherein the first upper dielectric layer has a higher dielectric constant than that of the second upper dielectric layer or has a smaller specific resistance value than that of the second upper dielectric layer.
5. The bipolar electrostatic chuck of claim 2 or 3, wherein the upper dielectric layer comprises:
a first upper dielectric layer formed on the edge electrode portion;
a second upper dielectric layer connected to the lower dielectric layer in the central region; and
a third upper dielectric layer formed on the central electrode portion,
wherein the first upper dielectric layer and the third upper dielectric layer have a dielectric constant higher than that of the second upper dielectric layer or a specific resistance value lower than that of the second upper dielectric layer.
6. The bipolar electrostatic chuck of any one of claims 1 or 4, wherein the upper dielectric layer comprises:
a fourth upper dielectric layer connected to the lower dielectric layer in the central region; and
a fifth upper dielectric layer formed on upper sides of the edge electrode part and the fourth upper dielectric layer,
wherein the fifth upper dielectric layer has a dielectric constant higher than that of the fourth upper dielectric layer or has a specific resistance value smaller than that of the fourth upper dielectric layer.
7. The bipolar electrostatic chuck of claim 2, 3 or 5, wherein the upper dielectric layer comprises:
a fourth upper dielectric layer connected to the lower dielectric layer in the central region; and
a sixth upper dielectric layer formed on upper sides of the edge electrode part, the center electrode part, and the fourth upper dielectric layer,
wherein the sixth upper dielectric layer has a dielectric constant higher than that of the fourth upper dielectric layer or a specific resistance value smaller than that of the fourth upper dielectric layer.
8. The bipolar electrostatic chuck of any one of claims 1, 4, or 6, wherein the upper dielectric layer comprises:
a first recess portion provided as a boundary between the edge electrode forming region and the central region and having a recess upper surface; and
a second recessed portion extending across the central region and having a recessed upper surface.
9. The bipolar electrostatic chuck of any one of claims 2, 3, 5, or 7, wherein the upper dielectric layer comprises:
a first recess portion provided as a boundary between the edge electrode forming region and the central region and having a recess upper surface;
a second recessed portion extending across the central region and having a recessed upper surface; and
a third recess portion provided as a boundary between the central region and the central electrode forming region and having a recess upper surface.
10. The bipolar electrostatic chuck of any one of claims 5, 7, or 9, wherein the second upper dielectric layer is of Al2O3Is formed of
The first and third upper dielectric layers to add at least one particle of Al selected from the group consisting of2O3And forming: TiC, TiO2、Cr2O3、MnO2COC and CuO.
11. The bipolar electrostatic chuck of any one of claims 2, 3, 5, 7, 9, or 10, wherein the first, second, and third upper dielectric layers have a surface roughness (Ra) of 2 to 3.5 μ ι η or 0.8 μ ι η.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180027120A KR20190106119A (en) | 2018-03-07 | 2018-03-07 | Bipolar Electrostatic Chuck Having Electrode Partially Formed Thereon |
| KR10-2018-0027120 | 2018-03-07 | ||
| PCT/US2019/020987 WO2019173497A1 (en) | 2018-03-07 | 2019-03-06 | Bipolar electrostatic chuck having electrode on portion thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111788670A true CN111788670A (en) | 2020-10-16 |
Family
ID=67847444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980015431.6A Pending CN111788670A (en) | 2018-03-07 | 2019-03-06 | Bipolar electrostatic chuck having electrodes on portions thereof |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20190106119A (en) |
| CN (1) | CN111788670A (en) |
| TW (1) | TW201943013A (en) |
| WO (1) | WO2019173497A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210142804A (en) | 2020-05-18 | 2021-11-26 | 삼성디스플레이 주식회사 | Electrostatic chuck |
| JP7438070B2 (en) | 2020-09-11 | 2024-02-26 | 新光電気工業株式会社 | Electrostatic chuck, substrate fixing device, and manufacturing method of substrate fixing device |
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Also Published As
| Publication number | Publication date |
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| TW201943013A (en) | 2019-11-01 |
| WO2019173497A1 (en) | 2019-09-12 |
| KR20190106119A (en) | 2019-09-18 |
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