CN111781760A

CN111781760A - Sensor and display device with sensor

Info

Publication number: CN111781760A
Application number: CN202010681822.6A
Authority: CN
Inventors: 水桥比吕志; 小出元; 仓泽隼人; 征矢年央; 后藤词贵
Original assignee: Japan Display Inc
Current assignee: Japan Display Inc
Priority date: 2015-10-09
Filing date: 2016-09-30
Publication date: 2020-10-16
Anticipated expiration: 2036-09-30
Also published as: CN106896545A; KR101953001B1; US11580768B2; US10970510B2; US10146987B2; TW201727453A; TWI620105B; US20190065807A1; US20170103247A1; KR101997423B1; US20210256238A1; KR20170042475A; JP2017073054A; KR20190020002A; CN106896545B; US10025970B2; CN111781760B; JP6503275B2; US20180293421A1

Abstract

The invention provides a sensor and a display device with the sensor, wherein the Sensor (SE) according to one embodiment comprises: a first control line (C1), a first signal line (S1), a first detection switch, a Common Electrode (CE), a first detection electrode, a first circuit, and a second circuit. The Common Electrode (CE) is located above the first control line (C1), the first signal line (S1), and the first detection switch, and is opposite to the first control line, the first signal line, and the first detection switch. The first detection electrode is located above the Common Electrode (CE). The first and second circuits are located below the Common Electrode (CE) and opposite to the common electrode.

Description

Sensor and display device with sensor

The present application is a divisional application of patent applications filed on 2016, 30/9, and under the name of 201610874822.1 entitled "sensor and display device with sensor", the entire contents of which are incorporated herein by reference.

Technical Field

Embodiments described herein relate generally to a sensor and a display device with a sensor.

Background

In recent years, various sensors have been developed. As a sensor, for example, a sensor that detects an uneven pattern (fingerprint) on a finger surface is known.

Disclosure of Invention

The present embodiment provides a sensor having excellent detection accuracy and a display device with a sensor.

A sensor according to an embodiment, comprising: a first control line; a first signal line; a first detection switch connected to the first control line and the first signal line; a common electrode located above the first control line, the first signal line, and the first detection switch and opposite to the first control line, the first signal line, and the first detection switch, the common electrode having a first opening opposite to the first detection switch; a first detection electrode located above the common electrode, opposite to the first opening, and connected to the first detection switch through the first opening; a first circuit which is located below the common electrode, faces the common electrode, and is connected to the first control line, and supplies a drive signal to the first control line, the drive signal being used to switch the first detection switch to any one of a first connection state in which the first signal line and the first detection electrode are electrically connected and a second connection state in which the first signal line and the first detection electrode are electrically insulated; and a second circuit located below the common electrode, opposite to the common electrode, and connected to the first signal line.

A sensor according to another embodiment, comprising: a plurality of control lines extending in a row direction; a plurality of signal lines extending in a column direction; a plurality of detection switches, each of which is connected to one of the control lines and one of the signal lines; a common electrode located above the plurality of control lines, the plurality of signal lines, and the plurality of detection switches, facing the plurality of control lines, the plurality of signal lines, and the plurality of detection switches, and having a plurality of openings, each of which faces one of the detection switches; a plurality of detection electrodes located above the common electrode, each of the detection electrodes being opposite to the corresponding opening and connected to the corresponding detection switch through the opening; a first circuit which is located below the common electrode, faces the common electrode, and is connected to the plurality of control lines, the first circuit supplying a drive signal to each of the control lines to switch each of the detection switches to any one of a first connection state in which the signal line and the detection electrode are electrically connected and a second connection state in which the signal line and the detection electrode are electrically insulated; a second circuit located below the common electrode, opposite to the common electrode, and connected to the plurality of signal lines; and a first detection unit that supplies a potential adjustment signal to the common electrode and controls driving of the first circuit and the second circuit, wherein the first detection unit simultaneously writes a write signal to four detection electrodes positioned in an nth row and an nth +1 th row among an mth column and an m +1 th column through the second circuit, corresponding two signal lines, and corresponding four detection switches, and reads a read signal indicating a change in the write signal from each of the four detection electrodes and combines the read signals into one signal, in a first sensing period when sensing driving for sensing is performed (センシング is made drivable), and the first detection unit simultaneously writes the write signal to an nth row and an nth +2 th row among the mth +1 th column and the m +2 th column through the second circuit, corresponding two signal lines, and corresponding four detection switches, in a second sensing period when the sensing driving is performed subsequent to the first sensing period And +1 rows of four detection electrodes, and reading a read signal indicating a change in the write signal from each of the four detection electrodes, combining the read signals into one signal, the potential adjustment signal being synchronized with the write signal at the time of the sensing driving, and being the same as the write signal in terms of phase and amplitude.

A display device with a sensor according to another embodiment includes a display panel including: a plurality of control lines; a plurality of signal lines; a plurality of pixel switches, each of the plurality of pixel switches being connected to one of the control lines and one of the signal lines; a common electrode disposed outside the display region and the display region, located above the control lines, the signal lines, and the pixel switches, facing the control lines, the signal lines, and the pixel switches, and having a plurality of openings, each of which faces one of the pixel switches; a plurality of pixel electrodes disposed in the display region and above the common electrode, each of the pixel electrodes being opposite to the corresponding opening and connected to the corresponding pixel switch through the opening; a first circuit which is disposed outside the display region, is located below the common electrode, faces the common electrode, and is connected to the plurality of control lines, and supplies a drive signal to each of the control lines so as to switch each of the pixel switches to any one of a first connection state in which the signal line and the pixel electrode are electrically connected and a second connection state in which the signal line and the pixel electrode are electrically insulated; and a second circuit disposed outside the display region, located below the common electrode, opposite to the common electrode, and connected to the plurality of signal lines.

A display device with a sensor according to another embodiment includes a display panel including: a plurality of control lines; a plurality of signal lines; a plurality of pixel switches, each of the plurality of pixel switches being connected to one of the control lines and one of the signal lines; a plurality of pixel electrodes located in the display region and disposed above the plurality of control lines, the plurality of signal lines, and the plurality of pixel switches; a detection electrode disposed above the plurality of control lines, the plurality of signal lines, and the plurality of pixel switches; a first circuit which is provided outside the display region and connected to the plurality of control lines, the first circuit supplying a drive signal to each of the control lines so as to switch each of the pixel switches to any one of a first connection state in which the signal line and the pixel electrode are electrically connected and a second connection state in which the signal line and the pixel electrode are electrically insulated; and a second circuit disposed outside the display region and connected to the signal lines, wherein the pixel electrodes and the detection electrode are disposed on the same layer.

Drawings

Fig. 1 is a plan view showing a sensor according to a first embodiment.

Fig. 2 is an equivalent circuit diagram showing an electrical connection relationship between 4 pixels and various wirings of the sensor shown in fig. 1.

Fig. 3 is an enlarged plan view showing a part of the first substrate shown in fig. 1, which is a plan view showing 4 pixels and various wirings shown in fig. 2.

Fig. 4 is a sectional view of the first substrate shown along line IV-IV of fig. 3.

Fig. 5 is an enlarged plan view showing a part of the outside of the effective region of the first substrate, and is a circuit diagram showing the multiplexer.

Fig. 6 is an equivalent circuit diagram showing the electrical connection relationship of the sensor.

Fig. 7 is a circuit diagram showing a detector of the above sensor.

Fig. 8 is a timing chart for explaining the driving method of the sensor, and shows a reset signal, a start pulse signal, a clock signal, a control signal, a vertical synchronization signal, a horizontal synchronization signal, and a write signal in a partial period in the F frame period and a partial period in the F +1 frame period.

Fig. 9 is a timing chart for explaining various signals and voltages used for driving the sensor, and shows a horizontal synchronization signal, a write signal, a potential adjustment signal, a control signal, and a power supply voltage.

Fig. 10 is an equivalent circuit diagram showing an electrical connection relationship between 4 pixels and various wirings of the sensor according to the second embodiment.

Fig. 11 is a timing chart for explaining a sensor driving method according to the third embodiment, and shows a clock signal, a control signal, and a horizontal synchronization signal in one horizontal scanning period.

Fig. 12 is an enlarged plan view showing a part of the outer side of the effective region of the first substrate of the sensor according to the fourth embodiment, and is a circuit diagram showing a multiplexer.

Fig. 13 is a circuit diagram for exemplifying a driving method of the sensor according to the fourth embodiment.

Fig. 14 is a circuit diagram illustrating a driving method of the sensor according to the fourth embodiment, which is connected to fig. 13.

Fig. 15 is a circuit diagram illustrating a driving method of the sensor according to the fourth embodiment, which is shown next to fig. 14.

Fig. 16 is a circuit diagram illustrating a driving method of the sensor according to the fourth embodiment, which is shown next to fig. 15.

Fig. 17 is a circuit diagram illustrating a driving method of the sensor according to the fourth embodiment, which is shown next to fig. 16.

Fig. 18 is a perspective view showing a configuration of a liquid crystal display device according to a fifth embodiment.

Fig. 19 is a schematic cross-sectional view illustrating the first substrate of the liquid crystal display device according to the fifth embodiment.

Fig. 20 is a perspective view showing a configuration of a liquid crystal display device according to a sixth embodiment.

Fig. 21 is a diagram for explaining the principle of an example of the position detection method.

Fig. 22 is a plan view showing a configuration of a liquid crystal display panel of the liquid crystal display device according to the seventh embodiment.

Fig. 23 is a plan view showing a configuration of a first substrate of a liquid crystal display device according to an eighth embodiment.

Fig. 24 is a circuit diagram showing a modification of the multiplexer.

Detailed Description

Embodiments of the present invention will be described below with reference to the drawings. It should be noted that the present disclosure is merely an example, and it is needless to say that appropriate modifications that are easily conceivable within the scope of the gist of the present invention by those skilled in the art are also included in the scope of the present invention. In addition, the drawings are intended to schematically show the width, thickness, shape, and the like of each part as compared with an actual form for clarity of description, and are merely examples, and do not limit the present invention.

In the present specification and the drawings, the same reference numerals are given to the same parts as those described in the previous drawings, and the overlapping detailed description may be omitted as appropriate.

(first embodiment)

First, the sensor SE and the method of driving the sensor SE according to the first embodiment will be described.

Fig. 1 is a plan view illustrating a sensor SE according to a first embodiment.

As shown in fig. 1, the sensor SE includes: a flat first substrate SUB1, a control module CM, a flexible printed circuit board FPC, and the like. The first substrate SUB1 includes an active area AA. In the present embodiment, the effective area AA is a detection area for detecting the detected part. The shape of the effective area AA is not particularly limited, and may be rectangular such as rectangular or circular. Here, the first substrate SUB1 has a rectangular frame-shaped non-detection area outside the effective area AA. The detection target portion may be, for example, a conductive object such as a finger.

The first substrate SUB1 includes a first insulating substrate 10 such as a glass substrate or a resin substrate. A plurality of control lines C, a plurality of signal lines S, and a plurality of auxiliary wirings a are formed above the first insulating substrate 10.

Here, when the second member is referred to as an upper second member of the first member, the second member is not positioned closer to the first insulating substrate 10 than the first member, but is positioned closer to a cover member CG described later than the first member. The second member may be either in contact with the first member or may be located separately from the first member. In the latter case, there may also be a third part interposed between the first part and the second part.

The plurality of control lines C includes j control lines of a first control line C1, a second control line C2, … …, a jth control line Cj. The control lines C extend in a first direction X and are arranged at intervals in a second direction Y intersecting the first direction X. Each control line C is shared by a plurality of pixels in one row.

The plurality of signal lines S includes i signal lines, i.e., a first signal line S1, a second signal line S2, and an ith signal line Si of … …. The signal lines S extend in the second direction Y and are arranged at intervals from each other in the first direction X. Here, the signal line S crosses the control line C in the effective area AA. Each signal line S is shared by a plurality of pixels in one column.

The plurality of auxiliary wirings a includes k auxiliary wirings of first auxiliary wirings a1, … … k auxiliary wirings Ak. The auxiliary wirings a extend in the second direction Y side by side with the signal lines S and are arranged at intervals from each other in the first direction X. Here, the auxiliary wiring a crosses the control line C in the effective area AA. Each auxiliary wiring a is shared by a plurality of pixels in two adjacent columns.

In this embodiment, the first direction X may be referred to as a row direction, and the second direction Y may be referred to as a column direction. The first direction X and the second direction Y are orthogonal to each other, but may intersect at an angle other than 90 °. The number of the control lines C, the signal lines S, and the auxiliary lines a is not particularly limited, and various modifications are possible. Here, j is 120, i is 120, and k is 60. Therefore, the number of control lines C is the same as that of signal lines S, and the number of auxiliary lines A is half of that of signal lines S.

A detection switch DS is formed near each intersection of the control line C and the signal line S. Each detection switch DS is connected to the control line C, the signal line S, and the auxiliary wiring a.

The common electrode CE is located above the first insulating substrate 10, the control line C, the signal line S, the auxiliary wiring a, and the detection switch DS, and is opposite to the control line C, the signal line S, the auxiliary wiring a, and the detection switch DS. The common electrode CE is formed not only in the effective area AA but also extended to the outside of the effective area AA. In the present embodiment, the common electrode CE is a single electrode, but the shape and pattern of the common electrode CE are not particularly limited and may be variously modified. For example, the common electrode CE may be formed by a plurality of electrodes arranged in a stripe pattern, or may be formed by a plurality of electrodes arranged in a matrix pattern.

The plurality of detection electrodes DE are positioned above the common electrode CE. In the illustrated example, the detection electrodes DE are each formed in a rectangular shape, and are arranged in a matrix shape in the first direction X and the second direction Y in the effective area AA. In other words, the effective area AA is an area where the detection electrode DE is provided. However, the shape of the detection electrode DE is an example, and is not limited to a rectangular shape. The number of detection electrodes DE is i × j. The detection electrodes DE are arranged at a pitch of 50 μm in the first direction X and the second direction Y, respectively, for example. In this case, the effective area AA is a square having approximately 6mm on one side.

A control line driving circuit CD as a first circuit is located between the first insulating substrate 10 and the common electrode CE. The control line driving circuit CD is located below the common electrode CE and is opposite to the common electrode CE. The control line driving circuit CD is connected to a plurality of control lines C outside the effective area AA. On the other hand, the control line driving circuit CD is connected to an OLB (Outer Lead Bonding) pad (パッド) group PG disposed at one end of the first insulating substrate 10 outside the effective area AA. The control line driving circuit CD supplies a driving signal for switching the detection switch DS to either one of the first connection state and the second connection state to the control line C. The first connection state is a state in which the signal line S is electrically connected to the detection electrode DE and the auxiliary line a is electrically insulated from the detection electrode DE. The second connection state is a state in which the signal line S is electrically insulated from the detection electrode DE and the auxiliary wiring a is electrically connected to the detection electrode DE.

Here, when the second member is described as being located below the first member, the second member is located closer to the first insulating substrate 10 than the first member, rather than closer to the cover member CG than the first member. The second member may be either in contact with the first member or may be located separately from the first member. In the latter case, there may also be a third part interposed between the first part and the second part.

The multiplexer (マルチプレクサ) MU as a second circuit is located between the first insulating substrate 10 and the common electrode CE. The multiplexer MU is located below the common electrode CE and opposite to the common electrode CE. The multiplexer MU is connected to the plurality of signal lines S outside the effective area AA. On the other hand, the multiplexer MU is connected to the OLB pad group PG outside the effective area AA. In the present embodiment, the multiplexer MU is an 1/4 multiplexer. However, the multiplexer MU is not limited to the 1/4 multiplexer, and may be modified variously, for example, the 1/3 multiplexer.

In the present embodiment, since the second circuit is the multiplexer MU, the auxiliary wiring a is not connected to the OLB pad group PG via the multiplexer MU. However, depending on the configuration of the second circuit, the auxiliary wiring a may also be connected to the OLB pad group PG via the second circuit.

As described above, the common electrode CE is not opposed to the OLB pad group PG, but is opposed to various wirings, switches, circuits, and the like formed above the first insulating substrate 10. Alternatively, the common electrode CE covers various wirings, switches, circuits, and the like. For this reason, the common electrode CE can electrically shield the detection electrode DE not only inside the effective area AA but also outside the effective area AA. That is, since the parasitic capacitance is less likely to occur in the detection electrode DE, the decrease in the sensor sensitivity can be suppressed.

The control module CM is connected to the OLB pad group PG of the first insulating substrate 10 via the flexible wiring substrate FPC. The control module CM may be referred to herein as an application processor. The control module CM is connected to the control line driving circuit CD, the multiplexer MU, and the like via a flexible printed circuit board FPC and the like. The control module CM can control the driving of the control line driving circuit CD and the multiplexer MU, and the like, so as to synchronize the control line driving circuit CD and the multiplexer MU.

A covering member described later may be provided above the first substrate SUB 1. The covering member is opposed to the first substrate SUB 1. In the X-Y plane view, for example, the size of the covering member is larger than that of the first substrate SUB 1.

Fig. 2 is an equivalent circuit diagram showing an electrical connection relationship between the 4 pixels and various wirings of the sensor SE shown in fig. 1.

As shown in fig. 2, each pixel includes a detection switch DS, a detection electrode DE, and the like. The detection switch DS has a first switching element and a second switching element connected in series, respectively. The first and second switching elements are formed of thin film transistors having different conductivity types from each other, for example. In this embodiment mode, the first switching element is formed of an N-channel type thin film transistor, and the second switching element is formed of a P-channel type thin film transistor. The first and second switching elements may be of either a top gate type or a bottom gate type. The semiconductor layers of the first and second switching elements are formed of, for example, polycrystalline silicon (poly-Si), but may be formed of amorphous silicon, an oxide semiconductor, or the like.

The first detection switch DS1 has a first switching element DS1a and a second switching element DS1 b. The first switching element DS1a has a first electrode electrically connected to the first control line C1, a second electrode electrically connected to the first signal line S1, and a third electrode electrically connected to the first detection electrode DE 1. The second switching element DS1b has a first electrode electrically connected to the first control line C1, a second electrode electrically connected to the first auxiliary wiring a1, and a third electrode electrically connected to the first detection electrode DE 1.

Here, in each of the first switching element DS1a and the second switching element DS1b, the first electrode functions as a gate electrode, one of the second and third electrodes functions as a source electrode, and the other of the second and third electrodes functions as a drain electrode. The third electrode of the first switching element DS1a and the third electrode of the second switching element DS1b are electrically connected. Note that the functions of these first to third electrodes are also the same for the second detection switch DS2, the third detection switch DS3, and the fourth detection switch DS4, which will be described later.

The second detection switch DS2 has a first switching element DS2a and a second switching element DS2 b. The first switching element DS2a has a first electrode electrically connected to the first control line C1, a second electrode electrically connected to the second signal line S2, and a third electrode electrically connected to the second detection electrode DE 2. The second switching element DS2b has a first electrode electrically connected to the first control line C1, a second electrode electrically connected to the first auxiliary wiring a1, and a third electrode electrically connected to the second detection electrode DE 2.

The third detection switch DS3 has a first switching element DS3a and a second switching element DS3 b. The first switching element DS3a has a first electrode electrically connected to the second control line C2, a second electrode electrically connected to the first signal line S1, and a third electrode electrically connected to the third detection electrode DE 3. The second switching element DS3b has a first electrode electrically connected to the second control line C2, a second electrode electrically connected to the first auxiliary wiring a1, and a third electrode electrically connected to the third detection electrode DE 3.

The fourth detection switch DS4 has a first switching element DS4a and a second switching element DS4 b. The first switching element DS4a has a first electrode electrically connected to the second control line C2, a second electrode electrically connected to the second signal line S2, and a third electrode electrically connected to the fourth detection electrode DE 4. The second switching element DS4b has a first electrode electrically connected to the second control line C2, a second electrode electrically connected to the first auxiliary wiring a1, and a third electrode electrically connected to the fourth detection electrode DE 4.

Note that the connection relationship between the detection switch DS and the signal line S and the auxiliary wiring a is not limited to the above example. For example, the second electrode of the first switching element of each detection switch DS may be connected to the auxiliary line a, and the second electrode of the second switching element of each detection switch DS may be connected to the signal line S.

The plurality of control lines C such as the first control line C1 and the second control line C2 are driven by the control line driving circuit CD described above, and the driving signal CS is supplied from the control line driving circuit CD to each control line C. The detection switch DS turns on one of the first switching element and the second switching element and turns off the other switching element in response to the drive signal CS. In this way, the detection switch DS is switched to any one of the first connection state and the second connection state.

The plurality of signal lines S, such as the first signal line S1 and the second signal line S2, may be driven by the control module CM through the multiplexer MU. Here, the control module CM switches to one of the first mode and the second mode to control the first substrate SUB1 and perform sensing. In detail, sensing is performed in the first detection unit DU1 of the control module CM. The present embodiment has a feature that, for example, a fine uneven pattern can be detected by the above sensing. For example, the fine uneven pattern is a fingerprint (uneven pattern on the surface of a finger). Note that sometimes the first mode is referred to as a Self-capacitance (Self-capacitance Sensing) mode, and the second mode is referred to as a Mutual-capacitance (Mutual-capacitance Sensing) mode.

First, the sensing based on the first mode is explained. Here, for example, it is assumed that a finger surface of a person is brought into contact with the above-described covering member, the finger surface being close to the effective area AA of the first substrate SUB 1.

In the first mode, a fingerprint is detected by writing a write signal Vw to each detection electrode DE and reading a read signal Vr from each detection electrode DE. Focusing on the first detection electrode DE1, the first detection unit DU1 writes the write signal Vw to the first detection electrode DE1 via the multiplexer MU, the first signal line S1, and the first detection switch DS1 (the first switching element DS1a) and reads the read signal Vr indicating the change in the write signal Vw from the first detection electrode DE1 via the first detection switch DS1 (the first switching element DS1a), the first signal line S1, and the multiplexer MU in a state where the drive signal CS is supplied to the first control line C1 and the first detection switch DS1 is switched to the first connection state. It is utilized that the value of the coupling capacitance generated at the first sensing electrode DE1 when the convex portion of the fingerprint is opposite to the first sensing electrode DE1 is different from the value of the coupling capacitance generated at the first sensing electrode DE1 when the concave portion of the fingerprint is opposite to the first sensing electrode DE 1.

As described above, by the sensing based on the first mode, the fingerprint can be detected. At the time of sensing, since the common electrode CE can electrically shield the detection electrode DE as described above, a decrease in sensor sensitivity can be suppressed.

Further, in the sensing based on the first mode, the potential adjustment signal Va is supplied to the auxiliary wiring a. The potential adjustment signal Va may be supplied to the common electrode CE via the auxiliary wiring a, for example. Preferably, the potential adjustment signal Va is synchronized with the write signal Vw, and is identical in phase and amplitude to the write signal Vw. Therefore, the timing of switching to the high-level potential and the timing of switching to the low-level potential are the same between the write signal Vw and the potential adjustment signal Va. Note that the high-level potential and the low-level potential of the potential adjustment signal Va are not particularly limited. For example, when the amplitude of the write signal Vw (the difference between the high-level potential and the low-level potential of the write signal Vw) is Vp [ V ], the low-level potential of the potential adjustment signal Va may be 0[ V ], and the high-level potential of the potential adjustment signal Va may be + Vp [ V ]. Further, the supply of the potential adjustment signal Va to the common electrode CE, in other words, the variation of the potential at which the write signal Vw is supplied to the common electrode CE, may be performed.

For example, the timing at which the potential of the detection electrode DE is increased by 3V by the write signal Vw can be matched with the timing at which the potential of the common electrode CE is increased by 3V by the potential adjustment signal Va, and the timing at which the potential of the detection electrode DE is decreased by 3V by the write signal Vw can be matched with the timing at which the potential of the common electrode CE is decreased by 3V by the potential adjustment signal Va.

In the sensing period, the variation in the potential difference between the detection electrode DE and the common electrode CE, to which the write signal Vw is written, can be suppressed. Further, the variation in the potential difference between the signal line S to which the write signal Vw is supplied and the common electrode CE can be suppressed. Therefore, the decrease in the sensor sensitivity can be further suppressed.

Further, while the first detection switch DS1 and the like connected to the first control line C1 are switched to the first connection state, the third detection switch DS3, the fourth detection switch DS4 and the like connected to the second control line C2 are switched to the second connection state, and therefore the potential adjustment signal Va can be supplied to the third detection electrode DE3, the fourth detection electrode DE4 and the like. The variation in the potential difference between the detection electrode DE and the common electrode CE to which the potential adjustment signal Va is supplied can be suppressed. Since the value of the parasitic capacitance that can be coupled to the detection electrode DE can be reduced, a decrease in the sensor sensitivity can be further suppressed.

In the sensing based on the first mode, the first detection unit DU1 can adjust a signal and a power supply voltage supplied to the first substrate SUB 1.

For example, the first detection unit DU1 may supply a power supply voltage to the control line drive circuit CD, but superimpose (re-tatamize) a signal on the power supply voltage and the drive signal CS during sense driving. Further, although first detection unit DU1 may supply a control signal to multiplexer MU, a superposition signal may be superimposed on the control signal during sense driving. The above-mentioned superposition signal is synchronized with the write signal Vw, and is identical in phase and amplitude to the write signal Vw.

Therefore, the timing of switching to the high-level potential and the timing of switching to the low-level potential are the same between the write signal Vw and the superimposed signal. Note that the above-described superimposed signal, in other words, the fluctuation amount of the potential of the superimposed write signal Vw may be superimposed.

For example, the timing at which the potential of the detection electrode DE is increased by 3V by the write signal Vw can be matched with the timing at which the potential of the control line C is increased by 3V by the drive signal CS, and the timing at which the potential of the detection electrode DE is decreased by 3V by the write signal Vw can be matched with the timing at which the potential of the control line C is decreased by 3V by the drive signal CS.

During the sensing period, it is also possible to suppress variation in the potential difference between the control line C to which the drive signal CS is supplied and the common electrode CE. Further, it is possible to suppress variation in the potential difference between the control line driving circuit CD and the common electrode CE, or between the multiplexer MU and the common electrode CE. Since the value of the parasitic capacitance that can be coupled to the common electrode CE, and even the value of the parasitic capacitance that can be coupled to the detection electrode DE can be reduced, a decrease in the sensor sensitivity can be further suppressed.

Next, sensing based on the second mode will be described. Here, for example, it is also assumed that the finger surface of the person is in contact with the covering member, and the finger surface is close to the effective area AA of the first substrate SUB 1.

In the second mode, the write signal Vw is written to the conductive member (not shown) located outside the effective area AA, a sensor signal is generated between the conductive member and the detection electrode DE, and the read signal Vr indicating a change in the sensor signal (for example, electrostatic capacitance generated at the detection electrode DE) is read from the detection electrode DE. Thereby detecting a fingerprint. As an example of the conductive member, a metal member that is positioned outside the first substrate SUB1 and is provided in a ring shape so as to surround the effective area AA is exemplified.

Here, focusing on the first detection electrode DE1 as well, the control module CM supplies the drive signal CS to the first control line C1, writes the write signal Vw to the conductive member in a state where the first detection switch DS1 is switched to the first connection state, and reads the read signal Vr from the first detection electrode DE1 via the first detection switch DS1 (first switching element DS1a), the first signal line S1, and the multiplexer MU.

As described above, by the sensing based on the second mode, the fingerprint can be detected. At the time of sensing, since the common electrode CE can electrically shield the detection electrode DE as described above, a decrease in sensor sensitivity can be suppressed.

Further, in sensing in the second mode, the common electrode CE can be switched to an electrically floating (フローティング) state. For example, by switching all the auxiliary wirings a to an electrically floating state, the common electrode CE can be switched to an electrically floating state. This enables, for example, the common electrode CE to have a high impedance (Hi-Z).

During the sensing period, variation in the potential difference between the detection electrode DE and the common electrode CE can be suppressed. Further, variation in the potential difference between the signal line S to which the write signal Vw is supplied and the common electrode CE can be suppressed. Since the value of the parasitic capacitance that can be coupled to the detection electrode DE can be reduced, a decrease in the sensor sensitivity can be further suppressed.

Alternatively, in the sensing based on the second mode, the common electrode CE can be set to the ground potential (GND). For example, all the auxiliary lines a are fixed to the ground potential, whereby the common electrode CE can be set to the ground potential. Even in this case, the value of the parasitic capacitance that can be coupled to the detection electrode DE can be reduced, and therefore, a decrease in the sensor sensitivity can be further suppressed.

Fig. 3 is an enlarged plan view showing a part of the first substrate SUB1 shown in fig. 1, which is a plan view showing 4 pixels and various wirings shown in fig. 2. Fig. 3 shows a first control line C1, a second control line C2, a first semiconductor layer SC1, a second semiconductor layer SC2, a third semiconductor layer SC3, a fourth semiconductor layer SC4, a first signal line S1, a second signal line S2, a first auxiliary wiring a1, a first conductive layer CL1, a second conductive layer CL2, a third conductive layer CL3, a fourth conductive layer CL4, a first shield electrode SH1, a second shield electrode SH2, a third shield electrode SH3, a fourth shield electrode SH4, a first detection electrode DE1, a second detection electrode DE2, a third detection electrode DE3, a fourth detection electrode DE4, and the like. In fig. 3, the common electrode CE is not shown.

As shown in fig. 3, the first control line C1 and the second control line C2 extend in the first direction X and are located at spaced positions in the second direction Y. A plurality of branches Cb are disposed in the first control line C1 and the second control line C2, respectively. These branched portions Cb protrude from one side edge of the first control line C1 or one side edge of the second control line C2 in the second direction Y. In the present embodiment, the branch part Cb is formed in an L shape or a shape in which the L is inverted right and left in an X-Y plane view in which the first control line C1 is on the upper side and the second control line C2 is on the lower side.

The first to fourth semiconductor layers SC1 to SC4 extend in the second direction Y. The first and second semiconductor layers SC1 and SC2 cross the first control line C1 at 2, and the third and fourth semiconductor layers SC3 and SC4 cross the second control line C2 at 2. Each semiconductor layer SC has a channel region at 2 locations intersecting the control line C. Here, each semiconductor layer SC has a channel region at the intersection with the main line portion and the branch portion Cb of the control line C. The first detection switch DS1 includes a first semiconductor layer SC1, the second detection switch DS2 includes a second semiconductor layer SC2, the third detection switch DS3 includes a third semiconductor layer SC3, and the fourth detection switch DS4 includes a fourth semiconductor layer SC 4.

The first and second signal lines S1 and S2 extend in the second direction Y and are located at spaced positions in the first direction X. A plurality of branches Sb are disposed on the first and second signal lines S1 and S2, respectively. These branches Sb protrude from one side edge of the first signal line S1 in the first direction X or protrude from one side edge of the second signal line S2 in the opposite direction to the first direction X. For example, the first signal line S1 has: a branch portion Sb1 opposite to and connected to one end portion of the first semiconductor layer SC1, and a branch portion Sb3 opposite to and connected to one end portion of the third semiconductor layer SC 3. The second signal line S2 includes: a branch Sb2 opposite to and connected to one end of the second semiconductor layer SC2, and a branch Sb4 opposite to and connected to one end of the fourth semiconductor layer SC 4.

The first auxiliary wiring a1 extends in the second direction Y. A plurality of branches Ab are disposed in the first auxiliary wiring a 1. In the branch Ab of the first auxiliary wiring a1, the first branch Ab1 protrudes from one side edge of the first auxiliary wiring a1 in the direction opposite to the first direction X, and is connected to the other end portion of the first semiconductor layer SC1 opposite to the other end portion. The second branch Ab2 protrudes from the other edge of the first auxiliary wiring a1 in the first direction X, and is connected to the other end of the second semiconductor layer SC2 so as to face the other end. The third branch Ab3 protrudes from one side edge of the first auxiliary wiring a1 in the direction opposite to the first direction X, and is connected to the other end portion of the third semiconductor layer SC3 so as to face the other end portion. The fourth branch Ab4 protrudes from the other edge of the first auxiliary wiring a1 in the first direction X, and is opposite to and connected to the other end of the fourth semiconductor layer SC 4.

The first conductive layer CL1 is between the channel regions of the first semiconductor layer SC1, opposite to the first semiconductor layer SC1, and is connected to the first semiconductor layer SC 1. The second conductive layer CL2 is between channel regions of the second semiconductor layer SC2, opposite to the second semiconductor layer SC2, and is connected to the second semiconductor layer SC 2. The third conductive layer CL3 is between channel regions of the third semiconductor layer SC3, opposite to the third semiconductor layer SC3, and is connected to the third semiconductor layer SC 3. The fourth conductive layer CL4 is between channel regions of the fourth semiconductor layer SC4, opposite to the fourth semiconductor layer SC4, and is connected to the fourth semiconductor layer SC 4.

Here, the common electrode CE is connected to the auxiliary wiring a at a plurality of places. For example, the common electrode CE is connected to the first to fourth branch portions Ab1 to Ab4 of the first auxiliary wiring a1 through the contact holes CHa (CHa1, CHa2, CHa3, CHa4), respectively. In this way, the common electrode CE can be connected to the auxiliary wiring a on a pixel-by-pixel basis, and in this way, the potential of the common electrode CE can be made uniform over the entire range of the common electrode CE.

The first to fourth shield electrodes SH1 to SH4 extend in the second direction Y, respectively, and are connected to the first auxiliary wiring a 1. Here, the first to fourth shield electrodes SH1 to SH4 are respectively opposed to and connected to the branch portions Ab of the first auxiliary wiring a 1. The first shield electrode SH1 faces a part of the first signal line S1 and also faces a branch portion Sb1 of the first signal line S1 protruding toward the first semiconductor layer SC1 side. The second shield electrode SH2 faces a part of the second signal line S2 and also faces a branch portion Sb2 of the second signal line S2 protruding toward the second semiconductor layer SC2 side. The third shield electrode SH3 faces a part of the first signal line S1 and also faces a branch portion Sb3 of the first signal line S1 that protrudes toward the third semiconductor layer SC3 side. The fourth shield electrode SH4 faces a part of the second signal line S2 and also faces the branch portion Sb4 of the second signal line S2 that protrudes toward the fourth semiconductor layer SC4 side.

The first to fourth detection electrodes DE1 to DE4 are formed in a rectangular shape and arranged in a matrix in the first direction X and the second direction Y.

The first detection electrode DE1 is opposed to the first control line C1, the first semiconductor layer SC1, the first signal line S1, the branch Ab1 of the first auxiliary wiring a1, the first conductive layer CL1, the first shield electrode SH1, the third shield electrode SH3, and the like, and is connected to the first conductive layer CL 1.

The second detection electrode DE2 is opposed to the first control line C1, the second semiconductor layer SC2, the second signal line S2, the branch Ab2 of the first auxiliary wiring a1, the second conductive layer CL2, the second shield electrode SH2, the fourth shield electrode SH4, and the like, and is connected to the second conductive layer CL 2.

The third detection electrode DE3 faces the second control line C2, the third semiconductor layer SC3, the first signal line S1, the branch Ab3 of the first auxiliary wiring a1, the third conductive layer CL3, the third shield electrode SH3, and the like, and is connected to the third conductive layer CL 3.

The fourth detection electrode DE4 faces the second control line C2, the fourth semiconductor layer SC4, the second signal line S2, the branch Ab4 of the first auxiliary wiring a1, the fourth conductive layer CL4, the fourth shield electrode SH4, and the like, and is connected to the fourth conductive layer CL 4.

In the X-Y plan view in which the first control line C1 is on the upper side and the second control line C2 is on the lower side, the first auxiliary wiring a1 is located between the pixels on the left side and the pixels on the right side. Note that the first auxiliary wiring a1 is located between adjacent pixels. The left-side pixel and the right-side pixel described above share the first auxiliary wiring a 1. The left-side pixel and the right-side pixel can be formed symmetrically with respect to the first auxiliary wiring a1, and this can contribute to higher definition of the pixels.

Fig. 4 is a schematic sectional view of the first substrate SUB1 shown along the line IV-IV of fig. 3. It is to be noted that fig. 4 shows not only the first substrate SUB1 but also the covering member CG.

As shown in fig. 4, the first control line C1 and the first shield electrode SH1 are formed over the first insulating substrate 10. In the present embodiment, the first control line C1 and the first shield electrode SH1 are formed on the first insulating substrate 10, but are not limited thereto. For example, the first control line C1 and the first shield electrode SH1 may also be formed on an insulating film provided over the first insulating substrate 10. The first control line C1 and the first shield electrode SH1 are located at the opposite side of the first detection electrode DE1 with respect to the common electrode CE. The first control line C1 and the first shield electrode SH1 are formed of the same conductive material, for example, metal.

A first insulating film 11 is formed on the first insulating substrate 10, the first control line C1, and the first shield electrode SH 1. The first semiconductor layer SC1 is formed over the first insulating film 11. The first semiconductor layer SC1 has 2 channel regions opposite to the first control line C1. The first semiconductor layer SC1 is located on the opposite side of the first detection electrode DE1 with respect to the common electrode CE. The first semiconductor layer SC1 is formed of, for example, polysilicon. The second insulating film 12 is formed on the first insulating film 11 and the first semiconductor layer SC 1.

The first signal line S1, the first conductive layer CL1, and the first auxiliary wiring a1 are formed over the second insulating film 12. The first signal line S1, the first conductive layer CL1, and the first auxiliary wiring a1 are located on the opposite side of the common electrode CE from the first detection electrode DE 1. The first signal line S1, the first conductive layer CL1, and the first auxiliary wiring a1 are formed of the same conductive material, for example, metal.

The first signal line S1 is positioned above the first shield electrode SH1 and opposite to the first shield electrode SH 1. For this reason, the first shield electrode SH1 is located at the opposite side of the common electrode CE with respect to the first signal line S1. Further, the first signal line S1 is connected to one end portion of the first semiconductor layer SC1 through a contact hole formed in the second insulating film 12.

The common electrode CE may be disposed above the first signal line S1, and the first shielding electrode SH1 may be disposed below the first signal line S1. By providing the first shield electrode SH1, the detection electrode DE can be further electrically shielded, and therefore, a decrease in sensor sensitivity can be suppressed.

The first detection unit DU1 can supply the potential adjustment signal Va to the first shield electrode SH1 via the first auxiliary wiring a 1. Since the variation in the potential difference between the first shield electrode SH1 and the common electrode CE can be suppressed, the decrease in sensor sensitivity can be further suppressed.

The first conductive layer CL1 is connected between the channel regions of the first semiconductor layer SC1 through contact holes formed in the second insulating film 12. The first auxiliary wiring a1 is connected to the other end portion of the first semiconductor layer SC1 through a contact hole formed in the second insulating film 12.

The third insulating film 13 is formed over the second insulating film 12, the first signal line S1, the first conductive layer CL1, and the first auxiliary wiring a 1. The third insulating film 13 has a contact hole which faces the first conductive layer CL1 and is opened to the first conductive layer CL 1.

Here, as described above, the first insulating substrate 10 is a glass substrate or a resin substrate, not a silicon substrate. The first insulating film 11, the second insulating film 12, and a fourth insulating film 14 described later can be formed using an inorganic material, and the third insulating film 13 can be formed using an organic material. The organic material is suitable for making a thick film, and examples of the organic material include acrylic resin and the like. The third insulating film 13 can be formed thicker with an organic material than with an inorganic material, and parasitic capacitance between the conductive member (the common electrode CE, the first detection electrode DE1, or the like) above the third insulating film 13 and the conductive member (the first shield electrode SH1, the first control line C1, the first signal line S1, or the like) below the third insulating film 13 can be reduced.

The common electrode CE is formed over the third insulating film 13. The common electrode CE is connected to the first auxiliary wiring a1 through a contact hole CHa1 formed in the third insulating film 13. The common electrode CE has a first opening OP1 opposite to the first detection switch DS1 and surrounding the contact hole of the third insulating film 13. The common electrode CE has a plurality of openings, not only the first opening OP 1. For example, the common electrode CE further has: a second opening opposite the second detection switch DS2, a third opening opposite the third detection switch DS3, a fourth opening opposite the fourth detection switch DS4, and the like.

The common electrode CE is made of a transparent conductive material such as Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or Zinc Oxide (ZnO). However, the material for the common electrode CE is not limited to the transparent conductive material, and a metal may be used instead of the transparent conductive material.

The fourth insulating film 14 is formed over the first conductive layer CL1, the third insulating film 13, and the common electrode CE. The fourth insulating film 14 has a contact hole which is opposed to the first conductive layer CL1 and is opened to the first conductive layer CL 1.

The first detection electrode DE1 is formed over the fourth insulating film 14, and is opposite to the first opening OP 1. The first detection electrode DE1 is connected to the first conductive layer CL1 through the first opening OP1 and the contact hole of the fourth insulating film 14. The first detection electrode DE1 may be formed of a transparent conductive material such as ITO, IZO, ZnO, or the like, as in the common electrode CE, but may be formed of a metal instead of the transparent conductive material.

The sensor SE may include a cover member CG located above the first base plate SUB1 and facing the first base plate SUB 1. The cover member CG is formed of, for example, a glass substrate. In this case, the cover member CG may be referred to as cover glass (cover glass). Alternatively, the covering member CG may be formed of a light-transmissive substrate such as a resin substrate. The cover member CG may be bonded to the first substrate SUB1 via an adhesive layer. The input surface IS of the sensor SE IS a surface covering the component CG. For example, the sensor SE can detect information of a fingerprint of a finger when the finger IS in contact with or in proximity to the input surface IS.

Fig. 5 is an enlarged plan view showing a part of the outside of the effective area AA of the first substrate SUB1, and is a circuit diagram showing the multiplexer MU.

As shown in fig. 5, the multiplexer MU has a plurality of control switch groups CSWG. Examples of the control switch group CSWG include a first control switch group CSWG1, a second control switch group CSWG2, and the like. The control switch groups CSWG each have a plurality of control switches CSW. In the present embodiment, the multiplexer MU is an 1/4 multiplexer, and the control switch group CSWG includes: 4 control switches including a first control switch CSW1, a second control switch CSW2, a third control switch CSW3 and a fourth control switch CSW 4.

The multiplexer MU is connected to the plurality of signal lines S. The multiplexer MU is also connected to the control module CM via a plurality of connection lines W1, 1 connection line W2, 4 control lines W3, W4, W5, W6. Here, the number of the connection lines W1 is 1/4 of the number of the signal lines S. As described above, since the number of signal lines S is 120, the number of connection lines W1 is 30.

Each control switch CSW has two switching elements connected in series. The two switching elements are formed of thin film transistors having different conductivity types from each other, for example. In this embodiment, each control switch CSW is formed of a P-channel thin film transistor and an N-channel thin film transistor connected in series.

First electrodes of the thin film transistors of the first control switch CSW1 are connected to a control line W3, first electrodes of the thin film transistors of the second control switch CSW2 are connected to a control line W4, first electrodes of the thin film transistors of the third control switch CSW3 are connected to a control line W5, and first electrodes of the thin film transistors of the fourth control switch CSW4 are connected to a control line W6.

The second electrode of each P-channel thin film transistor of the control switch CSW is connected to the connection line W2.

The second electrodes of the N-channel tfts of the first control switch group CSWG1 are connected to the same connection line W1, and the second electrodes of the N-channel tfts of the second control switch group CSWG2 are connected to the same connection line W1.

The third electrode of each thin film transistor of the first control switch CSW1 of the first control switch group CSWG1 is connected to the first signal line S1. The third electrode of each thin film transistor of the second control switch CSW2 of the first control switch group CSWG1 is connected to the second signal line S2. The third electrode of each thin film transistor of the third control switch CSW3 of the first control switch group CSWG1 is connected to the third signal line S3. The third electrode of each thin film transistor of the fourth control switch CSW4 of the first control switch group CSWG1 is connected to the fourth signal line S4.

The third electrode of each thin film transistor of the first control switch CSW1 of the second control switch group CSWG2 is connected to the fifth signal line S5. The third electrode of each thin film transistor of the second control switch CSW2 of the second control switch group CSWG2 is connected to the sixth signal line S6. The third electrode of each thin film transistor of the third control switch CSW3 of the second control switch group CSWG2 is connected to the seventh signal line S7. The third electrode of each thin film transistor of the fourth control switch CSW4 of the second control switch group CSWG2 is connected to the eighth signal line S8.

In each thin film transistor of the multiplexer MU, the first electrode functions as a gate electrode, one of the second and third electrodes functions as a source electrode, and the other of the second and third electrodes functions as a drain electrode.

The control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4 are supplied from the first detection unit DU1 to the control lines W3, W4, W5, and W6. The first control switch CSW1 is switched to any one of the first switching state and the second switching state in accordance with the control signal Vcsw 1. The second control switch CSW2 is switched to either the first switching state or the second switching state in accordance with the control signal Vcsw 2. The third control switch CSW3 is switched to either the first switching state or the second switching state in accordance with the control signal Vcsw 3. The fourth control switch CSW4 is switched to either the first switching state or the second switching state in accordance with the control signal Vcsw 4.

Here, the first switching state is a state in which the connection line W1 and the signal line S are electrically connected, and the second switching state is a state in which the connection line W2 and the signal line S are electrically connected. Therefore, by switching each control switch CSW to the first switching state, it is possible to supply the write signal Vw to the signal line S or read the read signal Vr from the detection electrode DE. Then, by switching each control switch CSW to the second switching state, the potential adjustment signal Va can be supplied to the signal line S.

By controlling the timing of switching the respective control switches CSW of the multiplexer MU to either of the first switching state and the second switching state in accordance with the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4 and the timing of switching the respective detection switches DS to either of the first connection state and the second connection state in accordance with the drive signal CS, writing of the write signal Vw to the plurality of detection electrodes DE and reading of the read signal Vr from the plurality of detection electrodes DE can be performed in a time-sharing manner.

Further, by using the multiplexer MU as described above, the write signal Vw can be supplied to the first signal line S1 and the fifth signal line S5, and the potential adjustment signal Va can be supplied to the second to fourth signal lines S2 to S4 and the sixth to eighth signal lines S6 to S8, respectively, in the same period. Since variations in potential difference between all the signal lines S and the common electrode CE can be suppressed, a decrease in sensor sensitivity can be further suppressed.

Note that, in the sensor SE, various conventionally known multiplexers (selection circuits) may be used as the second circuit instead of the multiplexer MU. For example, the sensor SE can utilize 1/3 multiplexers.

Fig. 6 is an equivalent circuit diagram showing the electrical connection relationship of the sensor SE.

As shown in fig. 6, the control module CM includes a main control part MC and a first detection unit DU 1. The main control unit MC is a central processing unit.

The main control unit MC transmits a control signal Vc to the analog front end AFE to control driving of the analog front end AFE. The main control unit MC receives the data signal Vd from the analog front end AFE. The data signal Vd is a signal based on the read signal Vr, and in this case, the read signal Vr is an analog signal and is converted into a digital signal. The main control unit MC transmits a synchronization signal Vs to the analog front end AFE, the circuit control signal source CC, and the power control unit PC to synchronize the driving of the analog front end AFE, the circuit control signal source CC, and the power control unit PC. Examples of the synchronization signal Vs include a vertical synchronization signal TSVD and a horizontal synchronization signal TSHD.

The analog front end AFE transmits the potential adjustment signal Va and the write signal Vw to the multiplexer MU, and receives the read signal Vr from the multiplexer MU. For example, the conversion of the read signal Vr to a digital signal is performed at the analog front end AFE. The analog front end AFE inputs the superimposed pulse signal (detection pulse) to the circuit control signal source CC and the power supply control unit PC. The pulse signal is synchronized with the potential adjustment signal Va, and is identical in phase and amplitude to the potential adjustment signal Va.

The circuit control signal source CC supplies a control signal Vcsw (Vcsw1, Vcsw2, Vcsw3, Vcsw4) to the multiplexer MU, and transmits a reset signal STB, a start pulse signal STV, and a clock signal CKV to the control line drive circuit CD.

The power supply control unit PC supplies a high-potential power supply voltage Vdd and a relatively low-potential power supply voltage Vss to the control line drive circuit CD.

The control line driving circuit CD has a plurality of shift registers SR and a plurality of control switches COS connected one-to-one to the plurality of shift registers SR. The high potential power supply line Wd supplied with the power supply voltage Vdd and the low potential power supply line Ws supplied with the power supply voltage Vss extend inside the control line drive circuit CD. The plurality of control switches COS are sequentially controlled via the shift register SR to be switched to a state in which the high potential power supply line Wd is electrically connected to the control line C or a state in which the low potential power supply line Ws is electrically connected to the control line C. In this embodiment, the drive signal CS is a power supply voltage Vdd or Vss.

Fig. 7 is a circuit diagram showing the detector DT of the sensor SE. In the present embodiment, the detector DT is formed in the analog front end AFE shown in fig. 6. Note that a plurality of detectors DT are formed in the analog front end AFE. The number of detectors DT is the same as the number of connection lines W1, for example. In this case, the detectors DT are connected to the connection line W1 one for one.

As shown IN fig. 7, the detector DT has an integrator IN, a reset switch RST, a switch SW1, and a switch SW 2. The integrator IN has an operational amplifier AMP and a capacitor CON. In this example, the capacitor CON is connected between the non-inverting input terminal and the output terminal of the operational amplifier AMP. The reset switch RST is connected in parallel to the capacitor CON. The switch SW1 is connected between the signal source and the connection line W1. The switch SW1 switches whether or not the write signal Vw is supplied from the signal source SG to the detection electrode DE via the connection line W1 or the like. The switch SW2 is connected between the connection line W1 and the non-inverting input terminal of the operational amplifier AMP. The switch SW2 switches whether or not the read signal Vr is input to the non-inverting input terminal.

In the case of using the detector DT as described above, first, the switch SW1 is turned on, and the switch SW2 is turned off, so that the write signal Vw is written to the detection electrode DE via the connection line W1 and the like. Next, when the switch SW1 is turned off, the switch SW2 is turned on, and the read signal Vr extracted from the detection electrode DE is input to the non-inverting input terminal via the connection line W1 or the like. The integrator IN integrates the input voltage (read signal Vr) with time. Thus, the integrator IN can output a voltage proportional to the input voltage as the output signal Vout. Then, the reset switch RST is turned off to discharge the charge of the capacitor CON, thereby resetting the value of the output signal Vout.

Next, a driving method of the sensor SE will be exemplarily described. Fig. 8 is a timing chart for explaining a driving method of the sensor SE according to the present embodiment, and shows the reset signal STB, the start pulse signal STV, the clock signal CKV, the control signals Vcsw1, Vcsw2, Vcsw3, Vcsw4, the vertical synchronization signal TSVD, the horizontal synchronization signal TSHD, and the write signal Vw in a part of the F frame period and a part of the F +1 frame period.

As shown in fig. 8, one frame period (1F) is a vertical scanning period and corresponds to 122 consecutive horizontal scanning periods. Each horizontal scanning period (1H) is defined based on the clock signal CKV. Each frame period is defined based on the vertical synchronization signal TSVD.

In the 119 th horizontal scanning period in the F frame period, which is the F-th one-frame period, the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4 based on the horizontal synchronization signal TSHD are supplied from the first detection unit DU1 to the multiplexer MU. Thereby, the first control switch CSW1, the second control switch CSW2, the third control switch CSW3, and the fourth control switch CSW4 are switched from the second switching state to the first switching state (the state in which the connection line W1 and the signal line S are electrically connected) in a time-sharing manner.

In the horizontal scanning period, the drive signal CS (power supply voltage Vdd) at the on level (オンレベル) is supplied from the control line drive circuit CD to the 119 th control line C119, and the drive signal CS (power supply voltage Vss) at the off level (オフレベル) is supplied to the control lines C other than the 119 th control line C119. Thus, writing of the write signal Vw to the detection electrodes DE of the pixels in the 119 th row and reading of the read signal Vr from the detection electrodes DE can be performed in a time-sharing manner.

Also in the 120 th horizontal scanning period of the F frame period, the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4 are supplied from the first detection unit DU1 to the multiplexer MU, and the first control switch CSW1, the second control switch CSW2, the third control switch CSW3, and the fourth control switch CSW4 are switched from the second switching state to the first switching state in a time-division manner.

In the horizontal scanning period, the on-level drive signal CS (power supply voltage Vdd) is supplied from the control line drive circuit CD to the 120 th control line C120, and the off-level drive signal CS (power supply voltage Vss) is supplied to the control lines C other than the 120 th control line C120. Thus, writing of the write signal Vw to the detection electrodes DE of the plurality of pixels in the 120 th row (the last row) and reading of the read signal Vr from the plurality of detection electrodes DE can be performed in a time-sharing manner.

This enables sensing of one frame amount in the F frame.

Next, in the 122 th horizontal scanning period after the 121 th horizontal scanning period in the F frame period has elapsed, the start pulse signal STV and the like are generated based on the vertical synchronization signal TSVD, and after the 122 th horizontal scanning period has elapsed, the operation is shifted to the F +1 frame period.

In the horizontal scanning period of the first time in the F +1 frame period, which is the F + 1-th one frame period, the first control switch CSW1, the second control switch CSW2, the third control switch CSW3, and the fourth control switch CSW4 are switched from the second switching state to the first switching state in a time division manner based on the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw 4.

In the horizontal scanning period, the on-level drive signal CS (power supply voltage Vdd) is supplied from the control line drive circuit CD to the first control line C1, and the off-level drive signal CS (power supply voltage Vss) is supplied to the control lines C other than the first control line C1. Thus, writing of the write signal Vw to the detection electrodes DE of the plurality of pixels in the 1 st row and reading of the read signal Vr from the plurality of detection electrodes DE can be performed in a time-sharing manner.

Hereinafter, writing of the write signal Vw to the detection electrodes DE of the plurality of pixels in one row and reading of the read signal Vr from the plurality of detection electrodes DE are also performed every horizontal scanning period (1H). Thus, for example, when a finger touches or approaches the input face IS, the first detection unit DU1 (control module CM) can detect information of the fingerprint of the finger.

Next, various signals supplied from the first detection unit DU1 to the first substrate SUB1 will be described. As described above, in the present embodiment, the various signals described above have characteristics. Fig. 9 is a timing chart for explaining various signals and voltages used for driving the sensor SE, and shows the horizontal synchronization signal TSHD, the write signal Vw, the potential adjustment signal Va, the control signal Vcsw1(Vcsw), the power supply voltage Vdd, and the power supply voltage Vss. It should be noted that the various signals and voltages shown in fig. 9 are shown for illustrative purposes only.

As shown in fig. 9, the write signal Vw is a pulse signal, and has a high-level potential of 3V, a low-level potential of 0V, and an amplitude of 3V.

The potential adjustment signal Va is preferably a signal synchronized with the write signal Vw and having the same phase and amplitude as the write signal Vw, as compared with a constant voltage fixed to 0V or the like. The amplitude of the potential adjustment signal Va may be 3V. In this example, the potential of the potential adjustment signal Va at the high level is 3V, the potential of the low level is 0V, and the potential adjustment signal Va is the same signal as the write signal Vw. As another example, the high-level potential of the potential adjustment signal Va may be 6V, and the low-level potential may be 3V.

Between the write signal Vw and the potential adjustment signal Va, the timing of switching to the high-level potential and the timing of switching to the low-level potential are the same. During the same time, the area of the slope line for the write signal Vw is the same as the area of the slope line for the potential adjustment signal Va. Even when time elapses, the difference between the potential of the write signal Vw and the potential of the potential adjustment signal Va is constant, and is 0V in the present embodiment.

This makes it possible to suppress variations in the potential difference between the common electrode CE and the signal line S to which the write signal Vw or the potential adjustment signal Va is supplied, and variations in the potential difference between the common electrode CE and the detection electrode DE to which the write signal Vw or the potential adjustment signal Va is supplied.

The control signal Vcsw has a high-level potential for switching the detection switch DS to the first switching state (the state of electrically connecting the connection line W1 and the signal line S), and a low-level potential for switching the detection switch DS to the second switching state (the state of electrically connecting the connection line W2 and the signal line S). In the present embodiment, the high-level potential of the control signal Vcsw is 3V, and the low-level potential is-3V.

However, the control signal Vcsw is preferably a signal obtained by superimposing a superimposed signal on the pulse signal rather than the pulse signal. The above-mentioned superposition signal is synchronized with the write signal Vw, and is identical in phase and amplitude to the write signal Vw. The control signal Vcsw is superimposed with a portion of the control signal Vcsw having a hatched area. Therefore, when the superimposition signal is superimposed on the high-level potential of the control signal Vcsw, the potential of the control signal Vcsw is 6V at the maximum, and when the superimposition signal is superimposed on the low-level potential of the control signal Vcsw, the potential of the control signal Vcsw is 0V at the maximum.

This can suppress variation in the potential difference between the control line C and the common electrode CE to which the control signal Vcsw is supplied.

The power supply voltage Vdd is supplied to the control line drive circuit CD having a potential for switching the detection switch DS to the first connection state (a state in which the signal line S and the detection electrode DE are electrically connected). In the present embodiment, the potential of the power supply voltage Vdd for switching the detection switch DS to the first connection state is 3V.

However, the power supply voltage Vdd is preferably a voltage obtained by superimposing a superimposed signal on the constant voltage higher than the constant voltage of the high potential. The portion of the power supply voltage Vdd with the area of the slash is superimposed on the power supply voltage Vdd. For this reason, when the superimposed signal is superimposed on the constant voltage of the power supply voltage Vdd, the potential of the power supply voltage Vdd is 6V at maximum.

This can suppress variation in the potential difference between the wiring (high-potential power supply line Wd, etc.) to which the power supply voltage Vdd is supplied and the common electrode CE.

The power supply voltage Vss is supplied to the control line drive circuit CD, which has a potential for switching the detection switch DS to the second connection state (a state in which the signal line S and the detection electrode DE are electrically insulated and the auxiliary wiring a and the detection electrode DE are electrically connected). In the present embodiment, the potential of the power supply voltage Vss for switching the detection switch DS to the second connection state is-3V.

However, the power supply voltage Vss is preferably a voltage obtained by superimposing a superimposed signal on the constant voltage, which is lower in potential than the constant voltage. A portion of the power supply voltage Vss with a hatched area is superimposed on the power supply voltage Vss. For this reason, when the superimposed signal is superimposed on the constant voltage of the power supply voltage Vss, the potential of the power supply voltage Vdd is 0V at maximum.

This can suppress variation in the potential difference between the common electrode CE and the wiring (the low potential power supply line Ws, etc.) to which the power supply voltage Vss is supplied.

According to the sensor SE and the method of driving the sensor SE according to the first embodiment configured as described above, the sensor SE includes the control line C, the signal line S, the detection switch DS, the common electrode CE, the detection electrode DE, the control line driving circuit CD as the first circuit, and the multiplexer MU as the second circuit. The common electrode CE is located above and opposite to the control line C, the signal line S, the detection switch DS, the control line driving circuit CD, and the multiplexer MU. The common electrode CE is formed not only in the effective area AA but also extended to the outside of the effective area AA. The detection electrode DE is located above and opposite to the common electrode CE.

The common electrode CE can electrically shield the detection electrode DE not only inside the effective area AA but also outside the effective area AA. That is, since the parasitic capacitance is less likely to occur in the detection electrode DE, the decrease in the sensor sensitivity can be suppressed.

The first detection unit DU1 (control module CM) can adjust a signal and a voltage supplied to the first substrate SUB 1. By controlling the potential of the conductive member (wiring or the like) below the common electrode CE, parasitic capacitance is less likely to occur in the common electrode CE, and variation in the potential of the common electrode CE can be suppressed. This can further suppress a decrease in the sensor sensitivity.

As described above, the sensor SE and the method for driving the sensor SE having excellent detection accuracy can be obtained.

(second embodiment)

Next, the sensor SE and the method of driving the sensor SE according to the second embodiment will be described. Fig. 10 is an equivalent circuit diagram showing the electrical connection relationship between the four pixels and various wirings in the sensor SE according to the second embodiment.

As shown in fig. 10, the sensor SE according to the second embodiment is different from the sensor SE according to the first embodiment in that the auxiliary wiring a is not formed, and the second switching elements (DS1b, DS2b, DS3b, DS4b) are not formed in the detection switch DS. In the present embodiment, the shield electrode SH may be set in an electrically floating state, or the sensor SE may not have the shield electrode SH formed. By switching the detection switch DS to the second connection state, the signal line S and the detection electrode DE can be insulated, and the detection electrode DE can be switched to an electrically floating state.

In the present embodiment, the potential adjustment signal Va can be supplied to the common electrode CE. For example, the potential adjustment signal Va can be supplied to the common electrode CE via a wiring provided outside the effective area AA.

Note that the method of driving the sensor SE differs from the method of driving the sensor SE according to the first embodiment in that the potential adjustment signal Va is not supplied from the first detection unit DU1 to the signal line S. However, as the method of driving the sensor SE according to the present embodiment, the method of driving the sensor SE according to the first embodiment can be generally applied.

According to the sensor SE and the method of driving the sensor SE according to the second embodiment configured as described above, the sensor SE includes the control line C, the signal line S, the detection switch DS, the common electrode CE, the detection electrode DE, the control line driving circuit CD, and the multiplexer MU. Therefore, the second embodiment can also obtain the same effects as those of the first embodiment.

In the sense driving, the detection electrode DE which is not the target of the write signal Vw can be switched to the electrically floating state. In this case, too, parasitic capacitance is less likely to occur in the common electrode CE, and potential variation in the common electrode CE can be suppressed. This can suppress a decrease in the sensitivity of the sensor.

(third embodiment)

Next, the sensor SE and the method of driving the sensor SE according to the third embodiment will be described. Fig. 11 is a timing chart for explaining a driving method of the sensor SE according to the third embodiment, and shows the clock signal CKV, the control signals Vcsw1, Vcsw2, Vcsw3, Vcsw4, and the horizontal synchronization signal TSHD in one horizontal scanning period (1H). Note that the sensor SE according to the present embodiment is formed in the same manner as the sensor SE according to the first embodiment.

As shown in fig. 11, in any one horizontal scanning period (1H), the plurality of control switches CSW of the multiplexer MU are alternately switched a plurality of times to the first switching state and the second switching state by the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4, which is different from the first embodiment. The frequency of the pulses of the horizontal synchronization signal TSHD can be made the same as in the first embodiment. In this case, the time period of one horizontal scanning period (1H) is longer than that of the first embodiment.

In one horizontal scanning period (1H), a combination of writing the write signal Vw to the same detection electrode DE and reading the read signal Vr from the detection electrode DE can be performed a plurality of times with the same detection electrode DE as a sensing target. The read signal Vr read from the same detection electrode DE can be integrated by the detector DT and output as the output signal Vout.

According to the sensor SE and the method of driving the sensor SE according to the third embodiment configured as described above, the sensor SE includes the control line C, the signal line S, the detection switch DS, the common electrode CE, the detection electrode DE, the control line driving circuit CD, and the multiplexer MU. Therefore, the third embodiment can also obtain the same effects as those of the first embodiment.

At the time of sensing driving, the read signal Vr read from the same detection electrode DE can be accumulated (load) a plurality of times. By integrating a plurality of read signals Vr, the level of the output signal Vout can be increased as compared with the case where a single read signal Vr is read. For example, the difference between the value of the output signal Vout when the convex portion of the fingerprint is opposed to the detection electrode DE and the value of the output signal Vout when the concave portion of the fingerprint is opposed to the detection electrode DE can be increased. This enables sensing of a detected portion such as a fingerprint in more detail.

(fourth embodiment)

Next, the sensor SE and the method of driving the sensor SE according to the fourth embodiment will be described. Fig. 12 is an enlarged plan view showing a part of the sensor SE according to the fourth embodiment outside the effective area AA of the first substrate SUB1, and is a circuit diagram showing the multiplexer MU.

As shown in fig. 12, the sensor SE according to the fourth embodiment is different from the sensor SE according to the first embodiment in that the multiplexer MU further includes a plurality of fifth control switches CSW5, a plurality of sixth control switches CSW6, and two control lines W7 and W8.

Each control switch group CSWG also has a fifth control switch CSW 5. A second electrode of the third control switch CSW3 and a second electrode of the fourth control switch CSW4 are connected via a fifth control switch CSW 5. A gate electrode (first electrode) of the fifth control switch CSW5 is connected to the control line W7. The conductivity type of the thin film transistor forming the fifth control switch CSW5 is not particularly limited, but in this embodiment, the fifth control switch CSW5 is formed of a P-channel thin film transistor. The control signal Vcsw5 is supplied from the first detection unit DU1 to the control line W7. The fifth control switch CSW5 is switched to either a conductive state or a non-conductive state in accordance with the control signal Vcsw 5.

The adjacent control switch groups CSWG are connected via a sixth control switch CSW 6. For example, the second electrode of the fourth control switch CSW4 of the first control switch group CSWG1 and the second electrode of the first control switch CSW1 of the second control switch group CSWG2 are connected via the sixth control switch CSW 6. A gate electrode (first electrode) of the sixth control switch CSW6 is connected to the control line W8. The conductivity type of the thin film transistor forming the sixth control switch CSW6 is not particularly limited, but in this embodiment, the sixth control switch CSW6 is formed of an N-channel thin film transistor. The control signal Vcsw6 is supplied from the first detection unit DU1 to the control line W8. The sixth control switch CSW6 is switched to either a conductive state or a non-conductive state in accordance with the control signal Vcsw 6.

Next, a method of driving the sensor SE will be described.

In the method for driving the sensor SE according to the first embodiment, a case has been described as an example where the write signal Vw is independently written to the single detection electrode DE via the one connection line W1 and the read signal Vr is independently read from the detection electrode DE for sensing in one sensing period in the sensing driving. In the fourth embodiment, sensing can be performed in the same manner as in the first embodiment. However, in the fourth embodiment, since the plurality of fifth control switches CSW5 and the plurality of sixth control switches CSW6 are added to the multiplexer MU, sensing can be performed in a method different from the first embodiment.

Next, a method of driving the sensor SE specific to the fourth embodiment will be roughly described.

In the fourth embodiment, in the first sensing period in the sensing driving for sensing, the write signal Vw is simultaneously written to the four detection electrodes DE positioned in the n-th row and the n + 1-th row in the m-th column and the m + 1-th column via the multiplexer MU, the two corresponding signal lines S, and the four corresponding detection switches DS, the read signal Vr indicating the change in the write signal Vw is read from each of the four detection electrodes DE, and the read signals Vr are combined (beam ねる) into one signal. By using four detection electrodes DE, the electrode area can be expanded, and the electric field intensity can be increased for sensing.

Next, in a second sensing period following the first sensing period, the write signal Vw is simultaneously written to the four detection electrodes DE positioned in the n-th row and the n + 1-th row in the m + 1-th column and the m + 2-th column via the multiplexer MU, the two corresponding signal lines S, and the four corresponding detection switches DS, and the read signal Vr indicating the change in the write signal is read from each of the four detection electrodes DE, and the read signals Vr are combined into one signal. That is, in the first direction X, sensing is performed in a range shifted by only one column.

Then, first detection unit DU1 ends sensing for the plurality of detection electrodes DE located on the nth row and the n +1 th row at the time of sensing driving, and then shifts to sensing for the plurality of detection electrodes DE located on the n +1 th row and the n +2 th row. Since sensing can be performed with a shift in the second direction Y by only one line, the level of resolution of the first embodiment can be maintained (レベル).

Next, a method of driving the sensor SE according to the fourth embodiment will be described with reference to fig. 13 to 17. Fig. 13 to 17 are circuit diagrams for illustrating a method of driving the sensor SE according to the fourth embodiment. Note that only the main portions necessary for the description in the first substrate SUB1 are shown in fig. 13 to 17. The detection switch DS is explained as a switch for switching the connection state between the signal line S and the detection electrode DE. The control switch CSW will be described as a switch for switching the connection state between the signal line S and the connection line W1.

As shown in fig. 13, the control line driving circuit CD simultaneously supplies the on-level driving signal CS (power supply voltage Vdd) to the first control line C1 and the second control line C2 and supplies the off-level driving signal CS (power supply voltage Vss) to the control lines C other than the first control line C1 and the second control line C2, based on the control of the control module CM. Thereby, the detection switches DS of the first and second rows are in the on state. In the multiplexer MU, the first control switch CSW1 and the second control switch CSW2 are in a conductive state, and the third control switch CSW3 and the fourth control switch CSW4 are in a non-conductive state. The sixth control switch CSW6 is also in a non-conductive state.

Thus, of the detection electrodes DE in the first and second rows, four adjacent detection electrodes DE with oblique lines are electrically bonded (beam ねる). The write signal Vw is supplied to the first signal line S1, the second signal line S2, the fifth signal line S5, and the sixth signal line S6 among the first to eighth signal lines S1 to S8. Thus, the writing of the write signal Vw and the reading of the read signal Vr can be collectively performed on the four bonded (combined) detection electrodes DE via the single connection line W1.

As shown in fig. 14, in the subsequent sensing period, the detection switches DS of the first and second rows are turned on. In the multiplexer MU, the second control switch CSW2 and the third control switch CSW3 are in a conductive state, and the first control switch CSW1 and the fourth control switch CSW4 are in a non-conductive state. The sixth control switch CSW6 is also in a non-conductive state.

Thus, of the detection electrodes DE of the first and second rows, four adjacent detection electrodes DE to which oblique lines are added are electrically bonded (combined). As can be seen from comparison with fig. 13, the four detection electrodes DE are bonded while being staggered by one column. The write signal Vw is supplied to the second signal line S2, the third signal line S3, the sixth signal line S6, and the seventh signal line S7 of the first to eighth signal lines S1 to S8. Thus, the write signal Vw and the read signal Vr can be collectively read from the four bonded detection electrodes DE via the single connection line W1.

As shown in fig. 15, in the subsequent sensing period, the detection switches DS of the first and second rows are turned on. In the multiplexer MU, the third control switch CSW3 and the fourth control switch CSW4 are in a conductive state, and the first control switch CSW1 and the second control switch CSW2 are in a non-conductive state. As for the fifth control switch CSW5, it is in a conducting state, and as for the sixth control switch CSW6, it is in a non-conducting state.

Thus, of the detection electrodes DE of the first and second rows, four adjacent detection electrodes DE to which oblique lines are added are electrically bonded. As can be seen from comparison with fig. 14, the four detection electrodes DE are further staggered by one column. The write signal Vw is supplied to the third signal line S3, the fourth signal line S4, the seventh signal line S7, and the eighth signal line S8 of the first to eighth signal lines S1 to S8. Thus, the write signal Vw and the read signal Vr can be collectively read from the four bonded detection electrodes DE via the single connection line W1.

As shown in fig. 16, in the subsequent sensing period, the detection switches DS of the first and second rows are turned on. In the multiplexer MU, the fourth control switch CSW4 and the first control switch CSW1 are in a conductive state, and the second control switch CSW2 and the third control switch CSW3 are in a non-conductive state. The fifth control switch CSW5 is in a non-conductive state, and the sixth control switch CSW6 is in a conductive state.

Thus, of the detection electrodes DE of the first and second rows, two or four detection electrodes DE adjacent to each other to which oblique lines are added are electrically bonded. As can be seen from comparison with fig. 15, the four detection electrodes DE are further staggered by one column. The write signal Vw is supplied to the first signal line S1, the fourth signal line S4, the fifth signal line S5, and the eighth signal line S8 among the first to eighth signal lines S1 to S8. Thus, the write signal Vw and the read signal Vr can be collectively read from the two or four detection electrodes DE bonded to each other via the single connection line W1.

Then, the first detection unit DU1 ends sensing with the plurality of detection electrodes DE positioned in the first and second rows as objects. Then, the first detection unit DU1 transfers to sensing with the plurality of detection electrodes DE located in the second and third rows as objects.

As shown in fig. 17, in addition to the control of the control module CM, the control line drive circuit CD simultaneously supplies the drive signal CS (power supply voltage Vdd) of the on level to the second control line C2 and the third control line C3, and supplies the drive signal CS (power supply voltage Vss) of the off level to the control lines C other than the second control line C2 and the third control line C3. Thereby, the detection switches DS of the second and third rows are brought into the on state. In the multiplexer MU, the first control switch CSW1 and the second control switch CSW2 are in a conductive state, and the third control switch CSW3 and the fourth control switch CSW4 are in a non-conductive state. As for the sixth control switch CSW6, it is also in a non-conductive state.

Thus, of the detection electrodes DE in the second and third rows, four adjacent detection electrodes DE to which oblique lines are added are electrically bonded. The write signal Vw is supplied to the first signal line S1, the second signal line S2, the fifth signal line S5, and the sixth signal line S6 among the first to eighth signal lines S1 to S8. Thus, the write signal Vw and the read signal Vr can be collectively read from the four bonded detection electrodes DE via the single connection line W1.

Thus, in the sensing of the second row and the third row, the sensing can be performed by binding the detection electrodes DE while shifting by one column. Sensing is performed by shifting only one line in the second direction Y.

According to the sensor SE and the method of driving the sensor SE according to the fourth embodiment configured as described above, the sensor SE includes the control line C, the signal line S, the detection switch DS, the common electrode CE, the detection electrode DE, the control line driving circuit CD, and the multiplexer MU. Therefore, the fourth embodiment can also obtain the same effects as those of the first embodiment.

At the time of the sensing driving, the first detection unit DU1 can perform writing of the write signal Vw and reading of the read signal Vr at once for the bound four (or two) detection electrodes DE. For this reason, sensing can be performed by extending the electrode area and increasing the electric field intensity.

In this case, sensing can be performed by shifting only the range of one row in the first direction X, and sensing can be performed by shifting only the range of one row in the second direction Y. For this reason, a decrease in the resolution of sensing can be suppressed or prevented.

Further, in the fourth embodiment, as in the third embodiment, the first detection unit DU1 may adjust the drive of the first substrate SUB1 and integrate the read signal Vr. This enables sensing of a detected portion such as a fingerprint in more detail.

Note that, when a plurality of detection electrodes DE are bonded and staggered, nine detection electrodes DE in total of three rows adjacent to each other and three columns adjacent to each other may be bonded, and staggered column by column and staggered row by row. Alternatively, sixteen detection electrodes DE of four rows adjacent to each other and four columns adjacent to each other may be bound and staggered column by column and row by row.

(fifth embodiment)

Next, a liquid crystal display device according to a fifth embodiment will be described. Note that, in this embodiment, the liquid crystal display device is a liquid crystal display device with a sensor. Fig. 18 is a perspective view showing a configuration of a liquid crystal display device according to a fifth embodiment.

As shown in fig. 18, the liquid crystal display device DSP includes an active matrix type liquid crystal display panel PNL, a drive IC1 that drives the liquid crystal display panel PNL, a backlight unit BL that illuminates the liquid crystal display panel PNL, a control module CM, a flexible wiring substrate FPC1, an FPC3, and the like.

The liquid crystal display panel PNL includes: a flat first substrate SUB1, a flat second substrate SUB2 disposed opposite to the first substrate SUB1, and a liquid crystal layer sandwiched between the first substrate SUB1 and the second substrate SUB 2. Note that in this embodiment, the first substrate SUB1 and the second substrate SUB2 can be referred to as an array substrate and a counter substrate, respectively.

As the first substrate SUB1, the first substrate SUB1 according to the above embodiment can be applied. However, in this embodiment, the first substrate SUB1 is applied to the liquid crystal display panel PNL, and thus can be modified as necessary. For example, the first substrate SUB1 may include an alignment film on a surface in contact with the liquid crystal layer. Further, the functions of the members constituting the first substrate SUB1 may be different from those of the above-described embodiment. For example, in the above-described components, the detection electrode DE also functions as a pixel electrode, and the detection switch DS also functions as a pixel switch. The signal line S also has a function of transmitting an image signal (e.g., a video signal) to the detection electrode DE via the detection switch DS.

Note that in this specification, the detection electrode DE, the detection switch DS, the control line C, and the control line driving circuit CD may be referred to as a Pixel Electrode (PE), a Pixel Switch (PSW), a scanning line (G), and a scanning line driving circuit (GD), respectively.

The liquid crystal display panel PNL includes a display area DA displaying an image. The display area DA corresponds to the effective area AA of the above embodiment. The liquid crystal display panel PNL is a transmissive type having a transmissive display function of displaying an image by selectively transmitting a backlight from the backlight unit BL. In addition to the transmissive display function, the liquid crystal display panel PNL may be a transflective type having a reflective display function of selectively reflecting external light to display an image.

As shown In fig. 19, the liquid crystal display panel PNL has a configuration corresponding to an IPS (In-Plane Switching) mode mainly using a lateral electric field substantially parallel to a main surface of a substrate, such as an FFS mode. Note that the substrate main surface here means a surface parallel to an X-Y plane defined by the first direction X and the second direction Y. In this embodiment, the first substrate SUB1 includes both the pixel electrode PE and the common electrode CE thereon. In order to form the above-described lateral electric field, each pixel electrode PE has a slit SL at a position opposite to the common electrode CE, for example. In the illustrated example, the pixel electrode PE is connected to a first pixel switch PSW1 having a first switching element PSW1a and a second switching element PSW1 b.

For this reason, the liquid crystal display panel PNL can be formed using a generally known TFT liquid crystal process as it is.

As shown in fig. 18, the backlight unit BL is disposed on the back surface side of the first substrate SUB 1. As such a backlight unit BL, various types are applicable, and a backlight unit using a Light Emitting Diode (LED) as a light source or the like is applicable, and a detailed description thereof is omitted. Note that, in the case where the liquid crystal display panel PNL is a reflective type having only a reflective display function, the backlight unit BL is omitted.

The liquid crystal display device DSP may also include the cover member CG. For example, the cover member CG may be provided above the outer surface of the liquid crystal display panel PNL on the screen side on which the image is displayed. Here, the outer surface is a surface of the second substrate SUB2 opposite to the surface facing the first substrate SUB1, and includes a display surface on which an image is displayed.

A driver IC1 as a first driver is mounted on the first substrate SUB1 of the liquid crystal display panel PNL. The drive IC1 is connected to the multiplexer MU and the scanning line drive circuit. The common electrode CE is not opposed to the drive IC1, but is formed to extend outside the display area DA to be opposed to the multiplexer MU and the scanning line drive circuit. The flexible wiring substrate FPC1 connects the liquid crystal display panel PNL and the control module CM. The control module CM supplies a signal and a voltage to the drive IC 1. The flexible wiring substrate FPC3 connects the backlight unit BL and the control module CM.

Next, a method for driving the liquid crystal display device DSP according to the fifth embodiment will be described.

In the fifth embodiment, the liquid crystal display panel DSP can perform display driving for displaying an image and sensing driving for sensing.

In the display driving, the common electrode driving circuit can supply a common driving signal to the common electrode CE. The common electrode driving circuit can be formed in the driving IC1, for example. As the common drive signal (common voltage), a constant voltage such as 0V can be exemplified. On the other hand, the pixel electrodes can be supplied with image signals by the drive IC1, the multiplexer MU, the scanning line drive circuit, and the like.

On the other hand, the sensing drive can set the sensing period in a blanking period of a display period in which the display drive is performed. Examples of the blanking period include a horizontal blanking period and a vertical blanking period. The first detection unit DU1 sets a plurality of pixel electrodes located in a partial area of the display area DA as objects to be sensed during sensing driving for sensing. In the present embodiment, a plurality of pixel electrodes of the sensing region SA located in the display region DA are set as sensing targets in advance. Thus, sensing is performed within the sensing region SA, and sensing is not required over the entire display region DA. For example, a reduction in the time period involved in sensing can be achieved. In addition, the display quality outside the sensing region SA can be suppressed from being degraded.

First detection unit DU1 writes write signal Vw to each of the plurality of pixel electrodes located in sensing region SA via multiplexer MU, corresponding signal line S, and corresponding pixel switch, and reads read signal Vr indicating a change in the write signal from each of the plurality of pixel electrodes. This enables sensing of the detected part. Such sensing is preferred to detect the case of fingerprints, etc.

In the present embodiment, similarly, it is preferable to supply the potential adjustment signal Va to the common electrode CE during the sensing period because a decrease in the sensor sensitivity can be suppressed.

Alternatively, instead of forming the common electrode CE by a single electrode, the common electrode CE may be formed by a plurality of electrodes disposed with an electrical insulation distance therebetween in an area other than the sensing area SA and the sensing area SA. Thus, the potential adjustment signal Va can be supplied to the electrode (common electrode CE) in the sensing region SA, and the common drive signal can be supplied to the electrode (common electrode CE) in the region other than the sensing region SA. This can suppress a decrease in the sensor sensitivity and also suppress a decrease in the display quality outside the sensing region SA.

According to the liquid crystal display device with sensor DSP and the method of driving the liquid crystal display device with sensor DSP according to the fifth embodiment configured as described above, the liquid crystal display device DSP includes the scanning lines, the signal lines S, the pixel switches, the common electrode CE, the pixel electrodes, the scanning line driving circuit, and the multiplexer MU, similarly to the sensor SE according to the above-described embodiment. Therefore, the fifth embodiment can also obtain the same effects as those of the first embodiment.

Further, wirings, electrodes, switches, circuits, and the like used for displaying an image can also be used for sensing. For this reason, it is possible to suppress addition of a component for sensing to the liquid crystal display device DSP.

In the fifth embodiment, the sensing mode may be switched to any one of the first mode (self capacitance mode) and the second mode (mutual capacitance mode).

As described above, the liquid crystal display device with sensor DSP and the method for driving the liquid crystal display device with sensor DSP, which have excellent detection accuracy, can be obtained.

(sixth embodiment)

Next, a liquid crystal display device DSP according to a sixth embodiment will be described. Note that, in this embodiment, the liquid crystal display device is a liquid crystal display device with a sensor.

In the fifth embodiment described above, the display driving and the sensing driving are performed, and in the sensing driving, a region which is a sensing object is specified as a part of the display region DA. In contrast, in the sixth embodiment, display driving and sensing driving are performed, and further, position detection driving for specifying the position of the detected portion is performed. Thus, after the region where the detected portion is located is specified by the position detection driving, the specified region can be sensed by the sensing driving. For example, it is possible to determine the region where the detected part is located in the position detection driving, and detect the concave-convex pattern of the detected part in the sensing driving.

For the determination of the position of the detected part, a position detection sensor PSE located in the display area DA of the liquid crystal display panel PNL is used. The position detection sensor PSE is different from a sensor that detects a concave-convex pattern of a detected part. A second detection unit DU2 is connected to the position detection sensor PSE. Second detection section DU2 drives position detection sensor PSE at the time of position detection driving for detecting position information of the detected section to detect the position information of the detected section. The position detecting sensor PSE is driven by a second detection unit DU2, which is different from the first detection unit DU 1. When sensing drive is performed to detect the concave-convex pattern of the detected portion, first detection section DU1 sets a plurality of pixel electrodes in the region where the detected portion is located as sensing targets based on the position information.

The electrodes of the position detection sensor PSE for determining the position of the detected part can be selected from various electrodes among the electrodes of the liquid crystal display device DSP.

For example, the common electrode CE can be selected as an electrode of the position detection sensor PSE. In this case, the common electrode CE is formed of a plurality of electrodes. For example, the plurality of electrodes are arranged in a matrix. Second detection unit DU2 writes first signal Wr to each of the electrodes, and reads second signal Re indicating a change in the first signal from each of the electrodes. As described above, the position information of the detected part can be detected in the self-capacitance mode.

Alternatively, a plurality of position detection electrodes Rx attached to the liquid crystal display device DSP can be selected as the electrodes of the position detection sensor PSE. For example, the plurality of position detection electrodes Rx are arranged in a matrix. Second detection unit DU2 writes first signal Wr to each position detection electrode Rx and reads second signal Re indicating a change in the first signal from each position detection electrode Rx. As described above, the position information of the detected part can be detected in the self-capacitance mode.

Alternatively, a combination of the common electrode CE and a plurality of position detection electrodes Rx attached to the liquid crystal display device DSP can be selected as the electrodes of the position detection sensor PSE. For example, the plurality of position detection electrodes Rx and the plurality of electrodes of the common electrode CE are arranged to intersect with each other. Second detection unit DU2 writes first signal Wr to each electrode of common electrode CE and reads second signal Re from each position detection electrode Rx. As described above, the positional information of the detected part can be detected in the mutual capacitance mode.

Hereinafter, in the present embodiment, a combination of the common electrode CE and the plurality of position detection electrodes Rx is selected as an electrode of the position detection sensor PSE, and the detection of the position information of the detected part in the mutual capacitance mode will be described.

First, the configuration of the liquid crystal display device according to the sixth embodiment will be described. Fig. 20 is a perspective view showing the configuration of a liquid crystal display device with sensor DSP according to the sixth embodiment.

As shown in fig. 20, the liquid crystal display device DSP includes an active matrix type liquid crystal display panel PNL, a drive IC1 that drives the liquid crystal display panel PNL, a position detection sensor PSE of an electrostatic capacitance type, a drive IC2 that drives the position detection sensor PSE, a backlight unit BL, a control module CM, a flexible wiring substrate FPC1, an FPC2, an FPC3, and the like. In the present embodiment, the drive IC1 and the drive IC2 form the second detection unit DU 2. The liquid crystal display panel PNL includes a first substrate SUB1, a second substrate SUB2, and a liquid crystal layer.

A drive IC1 as a first drive unit is mounted on the first substrate SUB1 of the liquid crystal display panel PNL. The flexible wiring substrate FPC1 connects the liquid crystal display panel PNL and the control module CM. The flexible wiring substrate FPC2 connects the position detection electrode Rx in the position detection sensor PSE and the control module CM. A driver IC2 as a second driver is mounted on the flexible printed circuit board FPC 2.

The driver IC1 and the driver IC2 are connected via a flexible printed circuit board FPC2 or the like. For example, when the flexible printed circuit board FPC2 has the branch portion FPCB connected to the first substrate SUB1, the driver IC1 and the driver IC2 may be connected to each other via the branch portion FPCB and the wiring on the first substrate SUB 1. The driver IC1 and the driver IC2 may be connected to each other via the flexible printed circuit boards FPC1 and FPC 2.

The drive IC2 can supply a timing signal notifying the drive timing of the position detection sensor PSE to the drive ICIC 1. Alternatively, the driver IC1 may supply a timing signal for notifying a driving timing of the common electrode CE to be described later to the driver IC 2. Alternatively, the control module CM can supply timing signals to the

driver ICs

1 and 2. The drive of the driver IC1 and the drive of the driver IC2 can be synchronized by the timing signals.

Next, an operation in the case of performing position detection driving for detecting that the detection target portion comes into contact with or approaches the screen of the liquid crystal display device DSP will be described. That is, the position detection sensor drive signal is supplied from the common electrode drive circuit to the common electrode CE. In this state, the position detection sensor PSE receives a sensor signal from the common electrode CE to perform position detection.

Here, the principle of an example of position detection will be described with reference to fig. 21.

As shown in fig. 21, the position detection sensor PSE includes a plurality of position detection electrodes Rx and a common electrode CE. The common electrode CE includes a plurality of divided electrodes CEa. The position detection electrodes Rx are located at least in the display area DA. The position of the position detection electrode Rx is not particularly limited, but the position detection electrode Rx may be provided on the second substrate SUB2 or the cover member CG. In this case, since the position detection electrodes Rx are formed by fine wires or formed in a mesh shape, gaps can be formed between the position detection electrodes Rx or inside the position detection electrodes Rx. Accordingly, the detected portion and the pixel electrode can be capacitively coupled via the gap. A capacitance Cc exists between the dividing electrode CEa and the position detection electrode Rx. That is, the position detection electrode Rx is capacitively coupled to the divided electrode CEa (common electrode CE). The first signals (sensor driving signals) Wr are sequentially supplied to the divided electrodes CEa at predetermined periods. In this example, it is assumed that the user's finger exists near a position where the specific position detection electrode Rx and the division electrode CEa intersect. The capacitance Cx is generated by the finger of the user approaching the position detection electrode Rx. When the pulse-like first signal Wr is supplied to the divided electrode CEa, a pulse-like second signal (sensor output value) Re having a lower level than the pulses obtained from the other position detection electrodes is obtained from the specific position detection electrode Rx. The second signal Re is obtained via a wire. That is, when detecting position information of the finger of the user in the display area DA, that is, input position information, the driving IC1 (common electrode driving circuit) supplies the first signal Wr to the common electrode CE (divided electrode CEa) to generate a sensor signal between the common electrode CE and the position detection electrode Rx. The drive IC2 is connected to the position detection electrode Rx and reads a second signal Re indicating a change in the sensor signal (for example, capacitance generated in the position detection electrode Rx).

The drive IC2 or the control module CM can detect two-dimensional position information of the finger in the X-Y plane of the position detection sensor PSE based on the timing of supplying the first signal Wr to the divided electrodes CEa and the second signal Re from each position detection electrode Rx. The capacitance Cx is different between when the finger approaches the position detection electrode Rx and when the finger moves away from the position detection electrode Rx. For this reason, the level of the second signal Re is also different between when the finger approaches the position detection electrode Rx and when the finger moves away. Therefore, the drive IC2 or the control module CM can also detect the proximity of the finger to the position detection sensor PSE (the distance in the third direction Z orthogonal to the first direction X and the second direction Y) based on the level of the second signal Re.

As described above, second detection section DU2 drives position detection sensor PSE at the time of position detection driving for detecting position information of a finger, thereby detecting the position information of the finger. Note that the pixel electrode is switched to an electrically floating state at the time of position detection driving.

Next, when sensing drive of a fingerprint of a finger is detected, first detection unit DU1 sets a plurality of pixel electrodes in an area where the finger is present as sensing targets based on the position information. First detection unit DU1 writes write signal Vw to each of the plurality of target pixel electrodes via multiplexer MU, corresponding signal line S, and corresponding pixel switch, and reads read signal Vr indicating a change in the write signal from each of the plurality of pixel electrodes. First detection section DU1 supplies potential adjustment signal Va synchronized with write signal Vr and having the same phase and amplitude as write signal Vr to common electrode CE.

According to the liquid crystal display device with sensor DSP and the method of driving the liquid crystal display device with sensor DSP according to the sixth embodiment configured as described above, the liquid crystal display device DSP includes the scanning lines, the signal lines S, the pixel switches, the common electrodes CE, the pixel electrodes, the scanning line driving circuit, and the multiplexer MU, similarly to the sensor SE according to the above-described embodiment. Therefore, in the sixth embodiment, the same effects as those of the first embodiment can be obtained.

The liquid crystal display device DSP further comprises a position detection sensor PSE and a second detection unit DU 2. Thus, since it is not necessary to finely sense the entire area of the display area DA with the fineness of the pixels, the time period required for sensing can be shortened.

Note that, in the present embodiment, a plurality of detection electrodes DE may be bonded and shifted to detect a fingerprint. Further, in the present embodiment, the plurality of detection electrodes DE may be bound and shifted to detect the position information of the finger. In this case, it is possible to omit addition of position detection electrode Rx, second detection unit DU2, and the like to liquid crystal display device DSP.

(seventh embodiment)

Next, a liquid crystal display device DSP according to a seventh embodiment will be described. Note that, in this embodiment, the liquid crystal display device is a liquid crystal display device with a sensor.

As shown in fig. 22, the sensing area SA is located outside the display area DA, unlike the fifth embodiment (fig. 18). The display driving in the display area DA and the sensing driving in the sensing area SA can be independently performed. In addition, as compared with the case where the sensing region SA is set in a part of the display region DA, it is possible to suppress a decrease in display quality in the display region DA.

When the first substrate SUB1 is formed, the display region DA and the sensing region SA may be formed using the same manufacturing process (manufacturing プロセス). As described with reference to fig. 4 and 19, for example, the pixel electrode PE in the display area DA and the detection electrode DE in the sensing area SA can be provided on the same layer. Here, the pixel electrode PE and the detection electrode DE are disposed over the fourth insulating film 14.

In the seventh embodiment, the mode can be switched to one of the first mode (self-capacitance mode) and the second mode (mutual capacitance mode) to perform sensing.

As described above, in the seventh embodiment, the liquid crystal display device with sensor DSP and the method for driving the liquid crystal display device with sensor DSP, which are excellent in detection accuracy, can be obtained.

(eighth embodiment)

Next, a liquid crystal display device DSP according to an eighth embodiment will be described. In this embodiment, the liquid crystal display device is a liquid crystal display device with a sensor.

As shown in fig. 23, in the display area DA, a plurality of pixels PX are arranged in a matrix. The pixels PX are surrounded by the plurality of scanning lines G connected to the scanning line driving circuit GD and the plurality of signal lines S connected to the multiplexer MU.

A sensing area SA is set in a part of the display area DA. The inside of the sensing area SA is configured in the same manner as the inside of the effective area AA shown in fig. 1. Therefore, in the present embodiment, the pixel electrode PE and the detection electrode DE can be provided on the same layer.

As described above, in the eighth embodiment, the liquid crystal display device with sensor DSP and the method for driving the liquid crystal display device with sensor DSP, which are excellent in detection accuracy, can be obtained.

While several embodiments of the invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the invention. These new embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and modifications are included in the scope and spirit of the invention, and are also included in the invention described in the claims and the equivalent scope thereof. The plurality of embodiments may be combined as necessary.

For example, the multiplexer MU may be configured as shown in fig. 24. The multiplexer MU of the modification shown in fig. 24 is different from the multiplexer MU shown in fig. 5 in that each control switch CSW is formed of a single N-channel thin film transistor and the connection line W2 is not formed. Each control switch CSW is switched to one of a state of electrically connecting the connection line W1 and the signal line S and a state of switching the signal line S to an electrically floating state.

The driver IC1 and the driver IC2 may be integrally formed. That is, the driver IC1 and the driver IC2 may be integrated into a single driver IC.

The control units such as the circuit, the drive IC, and the control module are not limited to the control line drive circuit CD (scanning line drive circuit), the multiplexer MU, the control module CM, the drive IC1, and the IC2, and may be modified in various ways as long as the first substrate SUB1 (liquid crystal display panel PNL) and the position detection electrode Rx (position detection sensor PSE) can be electrically controlled.

In the above embodiments, the display device is disclosed as an example of a liquid crystal display device. However, the above embodiment can be applied to all flat panel display devices such as an organic EL (electroluminescence) display device, another self-light emitting display device, and an electronic paper display device having an electrophoretic element or the like. It is needless to say that the above embodiment is not particularly limited, and can be applied to a medium-sized display device to a large-sized display device.

Claims

1. A sensor, comprising:

a first control line;

a first signal line;

a first auxiliary wiring;

a first detection electrode;

a first detection switch connected to the first detection electrode, the first control line, and the first signal line;

a second detection switch connected to the first detection electrode, the first control line, and the first auxiliary wiring;

a first circuit that is connected to the first control line and supplies a drive signal to the first control line, the drive signal switching the first detection switch and the second detection switch to either one of a first connection state and a second connection state; and

a second circuit connected to the first signal line and the first auxiliary wiring,

in the first connection state, the first detection electrode is electrically connected to the first signal line while being electrically insulated from the first auxiliary wiring,

in the second connection state, the first detection electrode is electrically connected to the first auxiliary wiring while being electrically insulated from the first signal line.

2. The sensor of claim 1,

the second circuit writes a write signal to the first detection electrode via the first signal line and the first detection switch and reads a read signal indicating a change in the write signal from the first detection electrode in the first connection state, and supplies a potential adjustment signal to the first auxiliary wiring,

in the sensing driving for sensing, the potential adjustment signal is synchronized with the write signal, and the phase and amplitude thereof are the same as those of the write signal.

3. The sensor of claim 2,

the sensor further includes a first detection unit that supplies a power supply voltage to the first circuit,

superimposing an overlap signal on the driving signal and the power supply voltage, respectively, at the time of the sensing driving,

the overlay signal is synchronized with the write signal, and is identical in phase and amplitude to the write signal.

4. The sensor of claim 2,

the sensor further includes a first detection unit that supplies a control signal to the second circuit,

superimposing a emphasis signal on the control signal at the time of the sensing driving,

5. The sensor of claim 2,

the sensor further includes a shield electrode that is opposed to the first signal line and is connected to the first auxiliary wiring,

the first auxiliary wiring is electrically connected to the second circuit,

the second circuit also supplies the potential adjustment signal to the shield electrode via the first auxiliary wiring.

6. The sensor of claim 2, wherein the sensor further comprises:

a second signal line connected to the second circuit;

a second detection electrode;

a third detection switch connected to the second detection electrode, the first control line, and the second signal line;

a fourth detection switch connected to the second detection electrode, the first control line, and the first auxiliary wiring; and

a first detection unit that supplies a control signal to the second circuit,

the second circuit has:

a first control switch that is switched between a first switching state in which the write signal is supplied to the first signal line and a second switching state in which the potential adjustment signal is supplied to the first signal line; and

a second control switch that is switched between a first switching state in which the write signal is supplied to the second signal line and a second switching state in which the potential adjustment signal is supplied to the second signal line,

the second circuit is during a sensing period in the sensing driving,

the first control switch is switched to the first switching state by the control signal, the second control switch is switched to the first switching state, the first detection switch and the second detection switch are switched to the first connection state by the drive signal, and the third detection switch and the fourth detection switch are switched to the first connection state by the drive signal,

thereby writing the write signal to the first detection electrode via the first control switch, the first signal line, and the first detection switch, and reading the read signal representing a change in the write signal from the first detection electrode, and,

writing the write signal to the second detection electrode via the second control switch, the second signal line, and the second detection switch, and reading the read signal representing a change in the write signal from the second detection electrode.

7. The sensor of claim 2, wherein the sensor further comprises:

a second control line connected to the first circuit;

a third detection electrode;

a fifth detection switch connected to the third detection electrode, the second control line, and the first signal line; and

a sixth detection switch connected to the third detection electrode, the second control line, and the first auxiliary wiring,

the first auxiliary wiring is electrically connected to the second circuit,

the first circuit supplies the drive signal to the second control line,

the first detection switch and the second detection switch electrically connect the first signal line and the first detection electrode in the first connection state and electrically connect the first auxiliary wiring and the first detection electrode in the second connection state,

the fifth detection switch and the sixth detection switch are switched to any one of the first connection state in which the first signal line and the third detection electrode are electrically connected and the second connection state in which the first auxiliary wiring and the third detection electrode are electrically connected in accordance with the drive signal,

the first circuit during a sensing period in the sensing driving,

switching the first detection switch and the second detection switch to the first connection state and switching the fifth detection switch and the sixth detection switch to the second connection state by the drive signal,

thereby writing the write signal to the first detection electrode via the first signal line and the first detection switch and reading the read signal representing a change in the write signal from the first detection electrode, and,

the potential adjustment signal is supplied to the third detection electrode via the first auxiliary wiring and the sixth detection switch.

8. The sensor of claim 1,

the sensor further comprises a common electrode, wherein the common electrode is positioned below the first detection electrode and above the first control line, the first signal line and the first detection switch.

9. A display device with a sensor, comprising a display panel, the display panel comprising:

a first control line;

a plurality of signal lines having a first signal line;

a plurality of auxiliary wirings having auxiliary wirings;

a first detection electrode;

a second detection switch connected to the first detection electrode, the first control line, and the auxiliary wiring;

a first circuit which is disposed outside a display region, is connected to the first control line, and supplies a drive signal to the first control line, the drive signal switching the first detection switch and the second detection switch to either one of a first connection state and a second connection state; and

a second circuit disposed outside the display region and connected to the plurality of signal lines and the plurality of auxiliary wirings,

in the first connection state, the first detection electrode is electrically connected to the corresponding signal line while being electrically insulated from the corresponding auxiliary wiring,

in the second connection state, the first detection electrode is electrically connected to the corresponding auxiliary wiring while being electrically insulated from the corresponding signal line.

10. The display device with sensor according to claim 9,

the display panel further includes:

a plurality of pixel electrodes; and

a common electrode opposing the plurality of pixel electrodes, an electric field being generated between each of the pixel electrodes and the common electrode during display,

the first detection electrode and the plurality of pixel electrodes are arranged on the same layer.

11. The display device with sensor according to claim 9,

the second circuit is configured to, during the sensing,

writing a write signal to the first detection electrode via the first signal line and the first detection switch, and reading a read signal representing a change in the write signal from the first detection electrode, and,

a potential adjusting signal synchronized with the write signal and having the same phase and amplitude as the write signal is supplied.

12. The display device with sensor according to claim 9, wherein the display device with sensor further comprises:

a first detection unit;

a position detection sensor; and

a second detection unit for detecting the position of the optical fiber,

the display panel further includes:

a pixel electrode; and

a common electrode opposite to the pixel electrode, an electric field being generated between the pixel electrode and the common electrode during display,

the first detection unit is connected to the display panel and controls driving of the first circuit and the second circuit,

the position detection sensor is located in the display area of the display panel,

the second detection unit is connected to the position detection sensor,

the second detection unit drives the position detection sensor to detect the position information of the detected part at the time of position detection driving of detecting the position information of the detected part during detection,

in the detection period, when detecting the sensing drive of the concave-convex pattern of the detected portion, the first detection unit sets the first detection electrode where the detected portion is located as a sensing object based on the position information, writes a write signal to the first detection electrode of the sensing object via the second circuit, the first signal line, and the first detection switch, reads a read signal indicating a change in the write signal from the first detection electrode, and supplies a potential adjustment signal, which is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude, to the common electrode.

13. The display device with sensor according to claim 10,

the first detection electrode is located above the common electrode,

the plurality of pixel electrodes and the first detection electrode are disposed on the same layer.

14. A sensor, comprising:

a first control line;

a first signal line;

a first auxiliary wiring;

a first detection electrode;

a first detection switch connected to the first detection electrode, the first control line, and the first signal line; and

a first shield electrode connected to the first auxiliary wiring,

the first shield electrode overlaps the first signal line with an insulating film interposed therebetween.

15. The sensor of claim 14,

the sensor further includes a second detection switch connected to the first detection electrode, the first control line, and the first auxiliary wiring.

16. The sensor of claim 15, wherein the sensor further comprises:

and a second circuit connected to the first signal line and the first auxiliary wiring.

17. The sensor of claim 16,

the second circuit writes a write signal to the first detection electrode via the first signal line and the first detection switch, reads a read signal indicating a change in the write signal from the first detection electrode, and supplies a potential adjustment signal to the first auxiliary wiring,

the potential adjustment signal is a signal synchronized with the write signal at the time of sensing driving for sensing.

18. The sensor of claim 17,

19. The sensor of claim 17,

20. The sensor of claim 16, wherein the sensor further comprises:

a second signal line connected to the second circuit;

a second detection electrode;

a third detection switch connected to the second detection electrode, the first control line, and the second signal line; and

a second shield electrode connected to the first auxiliary wiring,

the first shield electrode overlaps the second signal line with the insulating film interposed therebetween.

21. The sensor of claim 20, wherein the sensor further comprises:

and a first detection unit for supplying a control signal to the second circuit.

22. The sensor of claim 21,

the potential adjustment signal is a signal synchronized with the write signal at the time of sensing driving for sensing,

the second circuit includes:

and a second control switch that is switched between a first switching state in which the write signal is supplied to the second signal line and a second switching state in which the potential adjustment signal is supplied to the second signal line.

23. The sensor of claim 22,

the second circuit is during a sensing period in the sensing driving,

the first control switch is switched to the first switching state by the control signal, the second control switch is switched to the first switching state, the first detection switch and the second detection switch are switched to a first connection state by the drive signal, and the third detection switch and the fourth detection switch are switched to the first connection state by the drive signal,

24. A display device with a sensor, comprising a display panel, the display panel comprising:

a first control line;

a first signal line;

a first auxiliary wiring;

a first detection electrode;

a first shield electrode connected to the first auxiliary wiring,

25. The display device with sensor according to claim 24,

the display panel further includes a second detection switch connected to the first detection electrode, the first control line, and the first auxiliary wiring.

26. The display device with sensor according to claim 25,

the display panel further includes:

27. The display device with sensor according to claim 26,

28. The display device with sensor according to claim 27,

the display panel further includes a first detection unit that supplies a power supply voltage to the first circuit,

29. The display device with sensor according to claim 27,

the display panel further includes a first detection unit that supplies a control signal to the second circuit,

30. The display device with sensor according to claim 26,

the display panel further includes:

a second signal line connected to the second circuit;

a second detection electrode;

a second shield electrode connected to the first auxiliary wiring,

31. The display device with sensor according to claim 30,

the display panel further includes:

32. The display device with sensor according to claim 31,

the second circuit includes:

33. The display device with sensor according to claim 32,

the second circuit is during a sensing period in the sensing driving,