JP6929992B2 - Sensor and display device with sensor - Google Patents

Description

Embodiments of the present invention relate to sensors and display devices with sensors.

In recent years, various sensors have been developed. As a sensor, for example, a sensor that detects an uneven pattern (fingerprint) on the surface of a finger is known.

Japanese Unexamined Patent Publication No. 2004-317353 Japanese Unexamined Patent Publication No. 2003-90703

The present embodiment provides a sensor having excellent detection accuracy and a display device with a sensor.

The sensor according to one embodiment is
The first control line, the first signal line, the first auxiliary wiring, the first detection electrode, the first detection electrode, the first control line, and the first detection switch connected to the first signal line. The first shield electrode connected to the first auxiliary wiring, the first detection electrode, the first control line, the second detection switch connected to the first auxiliary wiring, and the first control line. The first circuit, which is connected to the first control line and gives a drive signal to the first control line to switch the first detection switch and the second detection switch to either the first connection state or the second connection state, and the first A signal line and a second circuit connected to the first auxiliary wiring are provided, the first shield electrode is superimposed on the first signal line via an insulating film, and the second circuit is the first signal. A write signal is written to the first detection electrode via a wire and the first detection switch, a read signal indicating a change in the write signal is read from the first detection electrode, and a potential adjustment signal is given to the first auxiliary wiring. The potential adjustment signal is a signal synchronized with the write signal during the sensing drive for sensing.

Further, the display device with a sensor according to the embodiment is
A display panel is provided, and the display panel includes a first control line, a first signal line, a first auxiliary wiring, a first detection electrode, the first detection electrode, the first control line, and the first. A first detection switch connected to a signal line, a first shield electrode connected to the first auxiliary wiring, a first detection electrode, a first control line, and a first connected to the first auxiliary wiring. The first control line is a drive signal that is connected to the first control line and switches the first detection switch and the second detection switch to either the first connection state or the second connection state. The first circuit provided to the first signal line and the second circuit connected to the first signal line and the first auxiliary wiring are provided, and the first shield electrode is superimposed on the first signal line via an insulating film. The second circuit writes a write signal to the first detection electrode via the first signal line and the first detection switch, and reads a read signal indicating a change in the write signal from the first detection electrode. The potential adjustment signal is a signal synchronized with the write signal at the time of sensing drive in which the potential adjustment signal is given to the first auxiliary wiring and sensing is performed.

FIG. 1 is a plan view showing a sensor according to the first embodiment. FIG. 2 is an equivalent circuit diagram showing an electrical connection relationship between the four pixels of the sensor shown in FIG. 1 and various wirings. FIG. 3 is an enlarged plan view showing a part of the first substrate shown in FIG. 1, and is a plan view showing the four pixels shown in FIG. 2 and various wirings. FIG. 4 is a schematic cross-sectional view of the first substrate shown along the line IV-IV of FIG. FIG. 5 is an enlarged plan view showing a part of the outside of the active area of the first substrate, and is a circuit diagram showing a multiplexer. FIG. 6 is an equivalent circuit diagram showing the electrical connection relationship of the sensor. FIG. 7 is a circuit diagram showing the detector of the sensor. FIG. 8 is a timing chart for explaining the driving method of the sensor, and is a reset signal and a start pulse in a part of the F frame period and a part of the F + 1 frame period. It is a figure which shows the signal, the clock signal, the control signal, the vertical synchronization signal, the horizontal synchronization signal, and the write signal. FIG. 9 is a timing chart for explaining various signals and voltages used for driving the sensor, and is a diagram showing a horizontal synchronization signal, a write signal, a potential adjustment signal, a control signal, and a power supply voltage. FIG. 10 is an equivalent circuit diagram showing an electrical connection relationship between the four pixels of the sensor according to the second embodiment and various wirings. FIG. 11 is a timing chart for explaining a sensor driving method according to a third embodiment, and is a diagram showing a clock signal, a control signal, and a horizontal synchronization signal in one horizontal scanning period. FIG. 12 is an enlarged plan view showing a part of the outside of the active area of the first substrate of the sensor according to the fourth embodiment, and is a circuit diagram showing a multiplexer. FIG. 13 is a circuit diagram for exemplifying a method of driving the sensor according to the fourth embodiment. FIG. 14 is a circuit diagram for exemplifying a method of driving a sensor according to the fourth embodiment, following FIG. 13. FIG. 15 is a circuit diagram for exemplifying a method of driving a sensor according to the fourth embodiment, following FIG. FIG. 16 is a circuit diagram for exemplifying a method of driving a sensor according to the fourth embodiment, following FIG. FIG. 17 is a circuit diagram for exemplifying a method of driving a sensor according to the fourth embodiment, following FIG. FIG. 18 is a perspective view showing the configuration of the liquid crystal display device according to the fifth embodiment. FIG. 19 is a schematic cross-sectional view showing a first substrate of the liquid crystal display device according to the fifth embodiment. FIG. 20 is a perspective view showing the configuration of the liquid crystal display device according to the sixth embodiment. FIG. 21 is a diagram for explaining the principle of an example of the position detection method. FIG. 22 is a plan view showing the configuration of the liquid crystal display panel of the liquid crystal display device according to the seventh embodiment. FIG. 23 is a plan view showing the configuration of the first substrate of the liquid crystal display device according to the eighth embodiment. FIG. 24 is a circuit diagram showing a modified example of the multiplexer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the disclosure is merely an example, and those skilled in the art can easily conceive of appropriate changes while maintaining the gist of the invention are naturally included in the scope of the present invention. Further, in order to clarify the explanation, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is just an example, and the interpretation of the present invention is used. It is not limited. Further, in the present specification and each figure, the same elements as those described above with respect to the above-mentioned figures may be designated by the same reference numerals, and detailed description thereof may be omitted as appropriate.

(First Embodiment)
First, the sensor SE and the driving method of the sensor SE according to the first embodiment will be described. FIG. 1 is a plan view showing the sensor SE according to the first embodiment.
As shown in FIG. 1, the sensor SE includes a flat plate-shaped first substrate SUB1, a control module CM, a flexible wiring board FPC1, and the like. The first substrate SUB1 includes an active area AA. In the present embodiment, the active area AA is a detection area for detecting the detected portion. The shape of the active area AA is square here, but is not particularly limited, and may be a rectangle such as a rectangle or a circle. Here, the first substrate SUB1 includes a rectangular frame-shaped non-detection region outside the active area AA. In addition, examples of the detected portion include a conductive object such as a finger.

The first substrate SUB1 includes a first insulating substrate 10 such as a glass substrate or a resin substrate. A plurality of control lines C, a plurality of signal lines S, and a plurality of auxiliary wirings A are formed above the first insulating substrate 10.
Here, when the second member above the first member is referred to, the second member is not located on the first insulating substrate 10 side of the first member, but on the cover member CG side described later from the first member. Is located in. The second member may be in contact with the first member or may be located away from the first member. In the latter case, a third member may be interposed between the first member and the second member.
The plurality of control lines C are j control lines of the first control line C1, the second control line C2, ... The jth control line Cj. The control lines C extend in the first direction X and are arranged at intervals from each other in the second direction Y intersecting the first direction X. Each control line C is shared by a plurality of pixels for one line.
The plurality of signal lines S are i signal lines of the first signal line S1, the second signal line S2, ... The i-th signal line Si. The signal lines S extend in the second direction Y and are arranged in the first direction X at intervals from each other. Here, the signal line S intersects the control line C in the active area AA. Each signal line S is shared by a plurality of pixels for one row.
The plurality of auxiliary wirings A are k auxiliary wirings of the first auxiliary wiring A1, ... kth auxiliary wiring Ak. The auxiliary wiring A extends in the second direction Y along with the signal line S, and is arranged in the first direction X at intervals from each other. Here, the auxiliary wiring A intersects the control line C in the active area AA. Each auxiliary wiring A is shared by a plurality of pixels for two adjacent rows.

In the present embodiment, the first direction X can be paraphrased as the row direction and the second direction Y as the column direction. Further, although the first direction X and the second direction Y are orthogonal to each other, they may intersect at an angle other than 90 °. The number of control lines C, signal lines S, and auxiliary wiring A is not particularly limited and can be variously modified. Here, j = 120, i = 120, k = 60. Therefore, the number of control lines C and the number of signal lines S are the same, and the number of auxiliary wirings A is half the number of signal lines S.
Further, a detection switch DS is formed in the vicinity of each intersection of the control line C and the signal line S. Each detection switch DS is connected to a control line C, a signal line S, and an auxiliary wiring A.

The common electrode CE is located above the first insulating substrate 10, the control line C, the signal line S, the auxiliary wiring A, and the detection switch DS, and the control line C, the signal line S, the auxiliary wiring A, and the detection switch DS. Facing each other. The common electrode CE is formed so as to extend not only to the active area AA but also to the outside of the active area AA. In this embodiment, the common electrode CE is a single electrode, but the shape and pattern of the common electrode CE are not particularly limited and can be variously deformed. For example, the common electrode CE may be formed of a plurality of electrodes arranged in a stripe shape, or may be formed of a plurality of electrodes arranged in a matrix shape.

The plurality of detection electrodes DE are located above the common electrode CE. In the illustrated example, the detection electrodes DE are each formed in a rectangular shape, and are arranged in a matrix in the first direction X and the second direction Y in the active area AA. In other words, the active area AA is an area where the detection electrode DE is provided. The number of detection electrodes DE is i × j. The detection electrodes DE are arranged, for example, in each of the first direction X and the second direction Y at a pitch of 50 μm. In this case, the active area AA is roughly a square with a side of 6 mm.

The control line drive circuit CD as the first circuit is located between the first insulating substrate 10 and the common electrode CE. The control line drive circuit CD is located below the common electrode CE and faces the common electrode CE. The control line drive circuit CD is connected to a plurality of control lines C outside the active area AA. On the other hand, the control line drive circuit CD is connected to the OLB (Outer Lead Bonding) pad group PG arranged at one end of the first insulating substrate 10 outside the active area AA. The control line drive circuit CD gives the control line C a drive signal for switching the detection switch DS to either the first connection state or the second connection state. The first connection state is a state in which the signal line S and the detection electrode DE are connected to insulate the auxiliary wiring A and the detection electrode DE. The second connection state is a state in which the signal line S and the detection electrode DE are insulated, and the auxiliary wiring A and the detection electrode DE are connected.
Here, when the second member below the first member is referred to, the second member is not located on the cover member CG side of the first member, but on the first insulating substrate 10 side of the first member. doing. The second member may be in contact with the first member or may be located away from the first member. In the latter case, a third member may be interposed between the first member and the second member.

The multiplexer MU as the second circuit is located between the first insulating substrate 10 and the common electrode CE. The multiplexer MU is located below the common electrode CE and faces the common electrode CE. The multiplexer MU is connected to a plurality of signal lines S outside the active area AA. On the other hand, the multiplexer MU is connected to the OLB pad group PG outside the active area AA. In this embodiment, the multiplexer MU is a 1/4 multiplexer. However, the multiplexer MU is not limited to the 1/4 multiplexer and can be variously modified. For example, the multiplexer MU may be a 1/3 multiplexer.
In the present embodiment, since the second circuit is the multiplexer MU, the auxiliary wiring A is connected to the OLB pad group PG without going through the multiplexer MU. However, depending on the configuration of the second circuit, the auxiliary wiring A may be connected to the OLB pad group PG via the second circuit.

As described above, the common electrode CE does not face the OLB pad group PG, but faces various wirings, switches, circuits, etc. formed above the first insulating substrate 10. Alternatively, the common electrode CE covers various wirings, switches, circuits, and the like. Therefore, the common electrode CE can electrically shield the detection electrode DE not only inside the active area AA but also outside the active area AA. That is, since it is possible to prevent parasitic capacitance from being generated in the detection electrode DE, it is possible to suppress a decrease in sensor sensitivity.

The control module CM is connected to the OLB pad group PG of the first insulating substrate 10 via the flexible wiring board FPC1. Here, the control module CM can be paraphrased as an application processor. The control module CM is connected to the control line drive circuit CD, the multiplexer MU and the like via the flexible wiring board FPC1 and the like. The control module CM can control the drive of the control line drive circuit CD and the multiplexer MU, and can synchronize the control line drive circuit CD and the multiplexer MU.

A cover member described later may be provided above the first substrate SUB1. The cover member faces the first substrate SUB1. In the XY plan view, for example, the size of the cover member is larger than the size of the first substrate SUB1.

FIG. 2 is an equivalent circuit diagram showing an electrical connection relationship between the four pixels of the sensor SE shown in FIG. 1 and various wirings.
As shown in FIG. 2, each pixel includes a detection switch DS, a detection electrode DE, and the like. The detection switch DS has a first switching element and a second switching element connected in series, respectively. The first and second switching elements are formed of, for example, thin film transistors having different conductive types from each other. In the present embodiment, the first switching element is formed of an N-channel type thin film transistor, and the second switching element is formed of a P-channel type thin film transistor. The first and second switching elements may be either a top gate type or a bottom gate type. Further, the semiconductor layers of the first and second switching elements are formed of, for example, polycrystalline silicon (poly-Si), but may be formed of amorphous silicon, an oxide semiconductor, or the like. ..

The first detection switch DS1 has a first switching element DS1a and a second switching element DS1b. The first switching element DS1a is electrically connected to the first electrode electrically connected to the first control line C1, the second electrode electrically connected to the first signal line S1, and the first detection electrode DE1. It has a connected third electrode. The second switching element DS1b is electrically connected to the first electrode electrically connected to the first control line C1, the second electrode electrically connected to the first auxiliary wiring A1, and the first detection electrode DE1. It has a connected third electrode.

Here, in each of the first switching element DS1a and the second switching element DS1b, the first electrode functions as a gate electrode, one of the second and third electrodes functions as a source electrode, and the second and third electrodes The other of the functions as a drain electrode. The third electrode of the first switching element DS1a and the third electrode of the second switching element DS1b are electrically connected. The functions of the first to third electrodes are the same for the second detection switch DS2, the third detection switch DS3, and the fourth detection switch DS4, which will be described later.

The second detection switch DS2 has a first switching element DS2a and a second switching element DS2b. The first switching element DS2a is electrically connected to the first electrode electrically connected to the first control line C1, the second electrode electrically connected to the second signal line S2, and the second detection electrode DE2. It has a connected third electrode. The second switching element DS2b is electrically connected to the first electrode electrically connected to the first control line C1, the second electrode electrically connected to the first auxiliary wiring A1, and the second detection electrode DE2. It has a connected third electrode.

The third detection switch DS3 has a first switching element DS3a and a second switching element DS3b. The first switching element DS3a is electrically connected to the first electrode electrically connected to the second control line C2, the second electrode electrically connected to the first signal line S1, and the third detection electrode DE3. It has a connected third electrode. The second switching element DS3b is electrically connected to the first electrode electrically connected to the second control line C2, the second electrode electrically connected to the first auxiliary wiring A1, and the third detection electrode DE3. It has a connected third electrode.

The fourth detection switch DS4 has a first switching element DS4a and a second switching element DS4b. The first switching element DS4a is electrically connected to the first electrode electrically connected to the second control line C2, the second electrode electrically connected to the second signal line S2, and the fourth detection electrode DE4. It has a connected third electrode. The second switching element DS4b is electrically connected to the first electrode electrically connected to the second control line C2, the second electrode electrically connected to the first auxiliary wiring A1, and the fourth detection electrode DE4. It has a connected third electrode.
The connection relationship of the detection switch DS to the signal line S and the auxiliary wiring A is not limited to the above-mentioned example. For example, the second electrode of the first switching element of each detection switch DS may be connected to the auxiliary wiring A, and the second electrode of the second switching element of each detection switch DS may be connected to the signal line S.

A plurality of control lines C such as the first control line C1 and the second control line C2 are driven by the control line drive circuit CD, and a drive signal CS is given to each control line C from the control line drive circuit CD. In the detection switch DS, one of the first switching element and the second switching element is turned on and the other is turned off by the drive signal CS. From the above, the detection switch DS is switched to either the first connection state or the second connection state.

A plurality of signal lines S such as the first signal line S1 and the second signal line S2 can be driven by the control module CM via the multiplexer MU. Here, the control module CM switches to one of the first mode and the second mode to control the first substrate SUB1 and performs sensing. Specifically, sensing is performed by the first detection unit DU1 of the control module CM. The present embodiment has a feature that, for example, a fingerprint (unevenness pattern on the surface of a finger) can be detected by the above sensing. The first mode may be referred to as a self-capacitive Sensing mode, and the second mode may be referred to as a mutual-capacitive Sensing mode.

First, sensing by the first mode will be described. Here, for example, it is assumed that the surface of a human finger is in contact with the cover member and the surface of the finger is close to the active area AA of the first substrate SUB1.
In the first mode, the fingerprint is detected by writing the write signal Vw to each detection electrode DE and reading the read signal Vr from each detection electrode DE. Focusing on the first detection electrode DE1, the first detection unit DU1 gives a drive signal CS to the first control line C1, and in a state where the first detection switch DS1 is switched to the first connection state, the multiplexer MU, the first A write signal Vw is written to the first detection electrode DE1 via the signal line S1 and the first detection switch DS1 (first switching element DS1a), and a read signal Vr indicating a change in the write signal Vw from the first detection electrode DE1 is first. It is read via the detection switch DS1 (first switching element DS1a), the first signal line S1, and the multiplexer MU. The value of the coupling capacitance generated in the first detection electrode DE1 when the convex portion of the fingerprint faces the first detection electrode DE1, and the value of the coupling capacitance generated in the first detection electrode DE1 when the concave portion of the fingerprint faces the first detection electrode DE1. It utilizes the fact that the value of the coupling capacity is different.

As described above, the fingerprint can be detected by sensing in the first mode. When sensing, the common electrode CE can electrically shield the detection electrode DE as described above, so that a decrease in sensor sensitivity can be suppressed.

Further, in the sensing by the first mode, the potential adjustment signal Va is given to the auxiliary wiring A. The potential adjustment signal Va can be given to the common electrode CE via, for example, the auxiliary wiring A. Here, the potential adjustment signal Va is synchronized with the write signal Vw and is the same as the write signal Vw in terms of phase and amplitude. Therefore, the write signal Vw and the potential adjustment signal Va are the same with respect to the timing of switching to the high level potential and the timing of switching to the low level potential. The high-level potential and the low-level potential of the potential adjustment signal Va are not particularly limited. For example, when the amplitude of the write signal Vw (the difference between the high-level potential and the low-level potential of the write signal Vw) is Vp [V], the low-level potential of the potential adjustment signal Va is set to 0 [V]. The high-level potential of the potential adjustment signal Va can be set to + Vp [V]. Further, giving the above-mentioned potential adjustment signal Va to the common electrode CE can be rephrased as giving the fluctuation of the potential of the write signal Vw to the common electrode CE.

For example, the timing of raising the potential of the detection electrode DE by 3V by the write signal Vw and the timing of raising the potential of the common electrode CE by 3V by the potential adjustment signal Va can be matched, and the write signal Vw can be used to match the timing of raising the potential of the detection electrode DE by 3V. The timing of lowering the potential by 3 V and the timing of lowering the potential of the common electrode CE by 3 V can be matched by the potential adjustment signal Va.
During the sensing period, fluctuations in the potential difference between the detection electrode DE on which the write signal Vw is written and the common electrode CE can be suppressed. Further, it is possible to suppress the fluctuation of the potential difference between the signal line S to which the write signal Vw is given and the common electrode CE. Therefore, the decrease in sensor sensitivity can be further suppressed.

Further, during the period when the first detection switch DS1 connected to the first control line C1 is switched to the first connection state, the third detection switch DS3, the fourth detection switch DS4, etc. connected to the second control line C2 By switching to the second connection state, the potential adjustment signal Va can be given to the third detection electrode DE3, the fourth detection electrode DE4, and the like. It is possible to suppress fluctuations in the potential difference between the detection electrode DE to which the potential adjustment signal Va is given and the common electrode CE. Since the value of the parasitic capacitance that can be bound to the detection electrode DE can be reduced, the decrease in sensor sensitivity can be further suppressed.

Further, in the sensing by the first mode, the first detection unit DU1 can adjust the signal and the power supply voltage given to the first substrate SUB1.
For example, the first detection unit DU1 applies a power supply voltage to the control line drive circuit CD, but may superimpose a superposed signal on the power supply voltage and the drive signal CS at the time of sensing drive. Further, although the first detection unit DU1 gives a control signal to the multiplexer MU, a superimposed signal may be superimposed on the control signal at the time of sensing drive. The superimposed signal is synchronized with the write signal Vw and is the same as the write signal Vw in terms of phase and amplitude.

Therefore, the write signal Vw and the superimposed signal are the same with respect to the timing of switching to the high level potential and the timing of switching to the low level potential. It should be noted that superimposing the above-mentioned superimposed signal can be rephrased as superimposing the fluctuation amount of the potential of the write signal Vw.

For example, the timing of raising the potential of the detection electrode DE by 3V by the write signal Vw and the timing of raising the potential of the control line C by 3V by the drive signal CS can be matched, and the potential of the detection electrode DE can be matched by the write signal Vw. The timing of dropping the potential of the control line C by 3 V can be matched with the timing of dropping the potential of the control line C by 3 V by the drive signal CS.
During the sensing period, it is possible to further suppress fluctuations in the potential difference between the control line C to which the drive signal CS is given and the common electrode CE. In addition, fluctuations in the potential difference between the control line drive circuit CD and the common electrode CE can be suppressed, and fluctuations in the potential difference between the multiplexer MU and the common electrode CE can be suppressed. Since the value of the parasitic capacitance that can be bound to the common electrode CE can be reduced, and the value of the parasitic capacitance that can be bound to the detection electrode DE can be reduced, the decrease in sensor sensitivity can be further suppressed. Can be done.

Next, sensing by the second mode will be described. Again, for example, it is assumed that the surface of a human finger is in contact with the cover member and the surface of the finger is close to the active area AA of the first substrate SUB1.
In the second mode, a write signal Vw is written to a conductive member (not shown) located outside the active area AA, a sensor signal is generated between the conductive member and the detection electrode DE, and the sensor signal (for example, the sensor signal (for example)) is generated from the detection electrode DE. The read signal Vr indicating the change in the capacitance) generated in the detection electrode DE is read. As a result, the fingerprint is detected. Examples of the conductive member include a member that is located outside the first substrate SUB1 and is provided in an annular shape so as to surround the active area AA and is made of metal.

Again, paying attention to the first detection electrode DE1, the control module CM gives the drive signal CS to the first control line C1 and switches the first detection switch DS1 to the first connection state to the conductive member. The write signal Vw is written, and the read signal Vr is read from the first detection electrode DE1 via the first detection switch DS1 (first switching element DS1a), the first signal line S1, and the multiplexer MU.
As described above, the fingerprint can be detected by sensing in the second mode. When sensing, the common electrode CE can electrically shield the detection electrode DE as described above, so that a decrease in sensor sensitivity can be suppressed.

Further, in the sensing by the second mode, the common electrode CE can be switched to the electrically floating state. For example, the common electrode CE can be switched to the electrically floating state by switching all the auxiliary wirings A to the electrically floating state. Thereby, for example, the common electrode CE can be made high impedance (Hi-Z).
During the sensing period, fluctuations in the potential difference between the detection electrode DE and the common electrode CE can be suppressed. Further, it is possible to suppress the fluctuation of the potential difference between the signal line S to which the write signal Vw is given and the common electrode CE. Since the value of the parasitic capacitance that can be bound to the detection electrode DE can be reduced, the decrease in sensor sensitivity can be further suppressed.

Alternatively, the common electrode CE can be set to the ground potential (GND) in the sensing by the second mode. For example, by fixing all the auxiliary wirings A to the ground potential, the common electrode CE can be set to the ground potential. Even in this case, since the value of the parasitic capacitance that can be bound to the detection electrode DE can be reduced, the decrease in sensor sensitivity can be further suppressed.

FIG. 3 is an enlarged plan view showing a part of the first substrate SU1 shown in FIG. 1, and is a plan view showing the four pixels shown in FIG. 2 and various wirings. FIG. 3 shows the first control line C1, the second control line C2, the first semiconductor layer SC1, the second semiconductor layer SC2, the third semiconductor layer SC3, the fourth semiconductor layer SC4, the first signal line S1, and the second signal. Wire S2, 1st auxiliary wiring A1, 1st conductive layer CL1, 2nd conductive layer CL2, 3rd conductive layer CL3, 4th conductive layer CL4, 1st shield electrode SH1, 2nd shield electrode SH2, 3rd shield electrode SH3 , The fourth shield electrode SH4, the first detection electrode DE1, the second detection electrode DE2, the third detection electrode DE3, the fourth detection electrode DE4, and the like are shown. In FIG. 3, the common electrode CE is not shown.

As shown in FIG. 3, the first control line C1 and the second control line C2 extend in the first direction X and are located at intervals in the second direction Y. A plurality of protrusions are formed on the first control line C1 and the second control line C2, respectively. These projecting portions project from one side edge of the first control line C1 or one side edge of the second control line C2 in the second direction Y. In the present embodiment, in the XY plan view in which the first control line C1 is on the upper side and the second control line C2 is on the lower side, the protruding portion is formed in an L-shape or an L-shape inverted left and right. There is.
The first to fourth semiconductor layers SC1 to SC4 extend in the second direction Y. The first and second semiconductor layers SC1 and SC2 intersect the first control line C1 at two points, and the third and fourth semiconductor layers SC3 and SC4 intersect with the second control line C2 at two points. Each semiconductor layer SC has two channel regions that intersect the control line C. Here, each semiconductor layer SC has a channel region at the intersection of the main line portion and the protruding portion of the control line C. The first detection switch DS1 has a first semiconductor layer SC1, the second detection switch DS2 has a second semiconductor layer SC2, the third detection switch DS3 has a third semiconductor layer SC3, and a fourth detection. The switch DS4 has a fourth semiconductor layer SC4.

The first and second signal lines S1 and S2 extend in the second direction Y and are located at intervals in the first direction X. A plurality of protrusions are formed on the first and second signal lines S1 and S2, respectively. These projecting portions project from one side edge of the first signal line S1 in the first direction X, or project from one side edge of the second signal line S2 in the direction opposite to the first direction X. For example, the first signal line S1 has a protrusion facing one end of the first semiconductor layer SC1 and connected to the one end, and a protrusion facing one end of the third semiconductor layer SC3 and connected to the one end. It has a part and. Further, the second signal line S2 has a protrusion facing one end of the second semiconductor layer SC2 and connected to the one end, and a protrusion facing one end of the fourth semiconductor layer SC4 and connected to the one end. It has a part and.

The first auxiliary wiring A1 extends in the second direction Y. A plurality of protrusions are formed on the first auxiliary wiring A1. Of the protruding portions of the first auxiliary wiring A1, the first protruding portion projects from one side edge of the first auxiliary wiring A1 in the direction opposite to the first direction X and faces the other end of the first semiconductor layer SC1. It is connected to the other end of the wire. The second protruding portion projects from the other side edge of the first auxiliary wiring A1 in the first direction X, faces the other end of the second semiconductor layer SC2, and is connected to the other end. The third protruding portion protrudes from one side edge of the first auxiliary wiring A1 in the direction opposite to the first direction X, faces the other end of the third semiconductor layer SC3, and is connected to the other end. The fourth protruding portion projects from the other side edge of the first auxiliary wiring A1 in the first direction X, faces the other end of the fourth semiconductor layer SC4, and is connected to the other end.

The first conductive layer CL1 faces the first semiconductor layer SC1 and is connected to the first semiconductor layer SC1 between the channel regions of the first semiconductor layer SC1. The second conductive layer CL2 faces the second semiconductor layer SC2 and is connected to the second semiconductor layer SC2 between the channel regions of the second semiconductor layer SC2. The third conductive layer CL3 faces the third semiconductor layer SC3 and is connected to the third semiconductor layer SC3 between the channel regions of the third semiconductor layer SC3. The fourth conductive layer CL4 faces the fourth semiconductor layer SC4 and is connected to the fourth semiconductor layer SC4 between the channel regions of the fourth semiconductor layer SC4.

Here, the common electrode CE is connected to the auxiliary wiring A at a plurality of places. For example, the common electrode CE passes through the contact holes CHa (CHa1, Cha2, Cha3, Cha4) and is connected to each of the first to fourth protrusions of the first auxiliary wiring A1. In this way, the common electrode CE may be connected to the auxiliary wiring A for each pixel, which can contribute to uniform potential of the common electrode CE over the entire area of the common electrode CE.

The first to fourth shield electrodes SH1 to SH4 extend in the second direction Y and are connected to the first auxiliary wiring A1. Here, the first to fourth shield electrodes SH1 to SH4 face each other of the protruding portion of the first auxiliary wiring A1 and are connected to the protruding portion. The first shield electrode SH1 faces a part of the first signal line S1 and also faces the protruding portion of the first signal line S1 protruding toward the first semiconductor layer SC1. The second shield electrode SH2 faces a part of the second signal line S2 and also faces the protruding portion of the second signal line S2 protruding toward the second semiconductor layer SC2. The third shield electrode SH3 faces a part of the first signal line S1 and also faces the protruding portion of the first signal line S1 protruding toward the third semiconductor layer SC3. The fourth shield electrode SH4 faces a part of the second signal line S2 and also faces the protruding portion of the second signal line S2 protruding toward the fourth semiconductor layer SC4.

The first to fourth detection electrodes DE1 to DE4 are formed in a rectangular shape, respectively, and are arranged in a matrix in the first direction X and the second direction Y.
The first detection electrode DE1 includes a first control line C1, a first semiconductor layer SC1, a first signal line S1, a protruding portion of the first auxiliary wiring A1, a first conductive layer CL1, a first shield electrode SH1, and a third shield electrode. It faces SH3 and the like and is connected to the first conductive layer CL1.
The second detection electrode DE2 includes a first control line C1, a second semiconductor layer SC2, a second signal line S2, a protruding portion of the first auxiliary wiring A1, a second conductive layer CL2, a second shield electrode SH2, and a fourth shield electrode. It faces SH4 and the like and is connected to the second conductive layer CL2.
The third detection electrode DE3 faces the second control line C2, the third semiconductor layer SC3, the first signal line S1, the protruding portion of the first auxiliary wiring A1, the third conductive layer CL3, the third shield electrode SH3, and the like. It is connected to the third conductive layer CL3.
The fourth detection electrode DE4 faces the second control line C2, the fourth semiconductor layer SC4, the second signal line S2, the protruding portion of the first auxiliary wiring A1, the fourth conductive layer CL4, the fourth shield electrode SH4, and the like. It is connected to the fourth conductive layer CL4.
The first auxiliary wiring A1 is located between the pixels on the left side and the pixels on the right side in the XY plan view in which the first control line C1 is on the upper side and the second control line C2 is on the lower side. The left pixel and the right pixel share the first auxiliary wiring A1. The left pixel and the right pixel can be formed symmetrically with respect to the first auxiliary wiring A1, which can contribute to high definition of the pixels.

FIG. 4 is a schematic cross-sectional view of the first substrate SUB1 shown along the line IV-IV of FIG. Note that FIG. 4 shows not only the first substrate SUB1 but also the cover member CG.
As shown in FIG. 4, the first control line C1 and the first shield electrode SH1 are formed above the first insulating substrate 10. In this embodiment, the first control line C1 and the first shield electrode SH1 are formed on the first insulating substrate 10, but the present invention is not limited thereto. For example, the first control line C1 and the first shield electrode SH1 may be formed on an insulating film provided on the first insulating substrate 10. The first control line C1 and the first shield electrode SH1 are located on the opposite side of the first detection electrode DE1 with respect to the common electrode CE. The first control line C1 and the first shield electrode SH1 are made of the same conductive material, and are made of, for example, metal.

The first insulating film 11 is formed on the first insulating substrate 10, the first control line C1, and the first shield electrode SH1. The first semiconductor layer SC1 is formed on the first insulating film 11. The first semiconductor layer SC1 has two channel regions facing the first control line C1. The first semiconductor layer SC1 is located on the opposite side of the first detection electrode DE1 with respect to the common electrode CE. The first semiconductor layer SC1 is made of, for example, polycrystalline silicon. The second insulating film 12 is formed on the first insulating film 11 and the first semiconductor layer SC1.

The first signal line S1, the first conductive layer CL1 and the first auxiliary wiring A1 are formed on the second insulating film 12. The first signal line S1, the first conductive layer CL1 and the first auxiliary wiring A1 are located on the opposite side of the first detection electrode DE1 with respect to the common electrode CE. The first signal line S1, the first conductive layer CL1 and the first auxiliary wiring A1 are made of the same conductive material, and are made of, for example, metal.
The first signal line S1 is located above the first shield electrode SH1 and faces the first shield electrode SH1. Therefore, the first shield electrode SH1 is located on the opposite side of the common electrode CE with respect to the first signal line S1. Further, the first signal line S1 is connected to one end of the first semiconductor layer SC1 through a contact hole formed in the second insulating film 12.
While the common electrode CE can be arranged above the first signal line S1, the first shield electrode SH1 can be arranged below the first signal line S1. By providing the first shield electrode SH1, the detection electrode DE can be further electrically shielded, so that a decrease in sensor sensitivity can be suppressed.
The first detection unit DU1 can give the potential adjustment signal Va to the first shield electrode SH1 via the first auxiliary wiring A1. Since the fluctuation of the potential difference between the first shield electrode SH1 and the common electrode CE can be suppressed, the decrease in sensor sensitivity can be further suppressed.
The first conductive layer CL1 is connected between the channel regions of the first semiconductor layer SC1 through the contact holes formed in the second insulating film 12. The first auxiliary wiring A1 is connected to the other end of the first semiconductor layer SC1 through a contact hole formed in the second insulating film 12.

The third insulating film 13 is formed on the second insulating film 12, the first signal line S1, the first conductive layer CL1, and the first auxiliary wiring A1. The third insulating film 13 has a contact hole that faces the first conductive layer CL1 and opens in the first conductive layer CL1.
Here, as described above, the first insulating substrate 10 is a glass substrate or a resin substrate, not a silicon substrate. The first insulating film 11, the second insulating film 12, and the fourth insulating film 14 described later can be formed of an inorganic material, while the third insulating film 13 can be formed of an organic material. The organic material is a material suitable for thickening a film, and examples of the organic material include acrylic resin. By using the organic material, the third insulating film 13 can be formed thicker than in the case of using the inorganic material, and the conductive member above the third insulating film 13 (common electrode CE, first detection). It is possible to reduce the parasitic capacitance between the electrode DE1 and the like) and the conductive member below the third insulating film 13 (first shield electrode SH1, first control line C1, first signal line S1 and the like).

The common electrode CE is formed on the third insulating film 13. The common electrode CE is connected to the first auxiliary wiring A1 through the contact hole CHa1 formed in the third insulating film 13. The common electrode CE has a first opening OP1 facing the first detection switch DS1 and surrounding the contact hole of the third insulating film 13. The common electrode CE has not only the first opening OP1 but also a plurality of openings. For example, the common electrode CE also has a second opening facing the second detection switch DS2, a third opening facing the third detection switch DS3, a fourth opening facing the fourth detection switch DS4, and the like.
The common electrode CE is formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (Zinc Oxide: ZnO). However, the material used for the common electrode CE is not limited to the transparent conductive material, and a metal may be used instead of the transparent conductive material.

The fourth insulating film 14 is formed on the first conductive layer CL1, the third insulating film 13, and the common electrode CE. The fourth insulating film 14 faces the first conductive layer CL1 and has a contact hole opened in the first conductive layer CL1.
The first detection electrode DE1 is formed on the fourth insulating film 14 and faces the first opening OP1. The first detection electrode DE1 is connected to the first conductive layer CL1 through the contact holes of the first opening OP1 and the fourth insulating film 14. The first detection electrode DE1 may be formed of a transparent conductive material such as ITO, IZO, or ZnO as in the common electrode CE, but may be formed of a metal instead of the transparent conductive material.

The sensor SE may include a cover member CG located above the first substrate SUB1 and facing the first substrate SUB1. The cover member CG is formed of, for example, a glass substrate. In this case, the cover member CG may be referred to as a cover glass. Alternatively, the cover member CG can be formed by using a light-transmitting substrate such as a resin substrate. The cover member CG may be joined to the first substrate SUB1 by an adhesive layer. The input surface IS of the sensor SE is the surface of the cover member CG. For example, the sensor SE can detect the fingerprint information of the finger when the finger touches or approaches the input surface IS.

FIG. 5 is an enlarged plan view showing a part of the outside of the active area AA of the first substrate SUB1 and is a circuit diagram showing the multiplexer MU.
As shown in FIG. 5, the multiplexer MU has a plurality of control switch groups CSWG. Examples of the control switch group CSWG include a first control switch group CSWG1 and a second control switch group CSWG2. Each control switch group CSWG has a plurality of control switch CSWs. In this embodiment, the multiplexer MU is a 1/4 multiplexer, and the control switch group CSWG consists of four control switches CSW1, a second control switch CSW2, a third control switch CSW3, and a fourth control switch CSW4. It has a control switch.
The multiplexer MU is connected to a plurality of signal lines S. Further, the multiplexer MU is connected to the control module CM via a plurality of connection lines W1, one connection line W2, and four control lines W3, W4, W5, W6. Here, the number of connecting lines W1 is 1/4 of the number of signal lines S. As described above, since the number of signal lines S is 120, the number of connection lines W1 is 30.

Each control switch CSW has two switching elements connected in series. The above two switching elements are formed of, for example, thin film transistors having different conductive types from each other. In the present embodiment, each control switch CSW is formed of a P-channel type thin film transistor and an N-channel type thin film transistor connected in series.
The first electrode of each thin film transistor of the first control switch CSW1 is connected to the control line W3, the first electrode of each thin film transistor of the second control switch CSW2 is connected to the control line W4, and each of the third control switch CSW3. The first electrode of the thin film transistor is connected to the control line W5, and the first electrode of each thin film transistor of the fourth control switch CSW4 is connected to the control line W6.

The second electrode of each P-channel type thin film transistor of the control switch CSW is connected to the connection line W2.
The second electrode of each N-channel type thin film transistor of the first control switch group CSWG1 is connected to the same connection line W1, and the second electrode of each N-channel type thin film transistor of the second control switch group CSWG2 is connected to the same connection. It is connected to the line W1.

The third electrode of each thin film transistor of the first control switch CSW1 of the first control switch group CSWG1 is connected to the first signal line S1. The third electrode of each thin film transistor of the second control switch CSW2 of the first control switch group CSWG1 is connected to the second signal line S2. The third electrode of each thin film transistor of the third control switch CSW3 of the first control switch group CSWG1 is connected to the third signal line S3. The third electrode of each thin film transistor of the fourth control switch CSW4 of the first control switch group CSWG1 is connected to the fourth signal line S4.
The third electrode of each thin film transistor of the first control switch CSW1 of the second control switch group CSWG2 is connected to the fifth signal line S5. The third electrode of each thin film transistor of the second control switch CSW2 of the second control switch group CSWG2 is connected to the sixth signal line S6. The third electrode of each thin film transistor of the third control switch CSW3 of the second control switch group CSWG2 is connected to the seventh signal line S7. The third electrode of each thin film transistor of the fourth control switch CSW4 of the second control switch group CSWG2 is connected to the eighth signal line S8.
Here, in each thin film transistor of the multiplexer MU, the first electrode functions as a gate electrode, one of the second and third electrodes functions as a source electrode, and the other of the second and third electrodes functions as a drain electrode. do.

The control lines W3, W4, W5, and W6 are given control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4 from the first detection unit DU1. The first control switch CSW1 is switched to either the first switching state or the second switching state by the control signal Vcsw1. The second control switch CSW2 is switched to either the first switching state or the second switching state by the control signal Vcsw2. The third control switch CSW3 is switched to either the first switching state or the second switching state by the control signal Vcsw3. The fourth control switch CSW4 is switched to either the first switching state or the second switching state by the control signal Vcsw4.
Here, the first switching state is a state in which the connection line W1 and the signal line S are connected, and the second switching state is a state in which the connection line W2 and the signal line S are connected. Therefore, by switching each control switch CSW to the first switching state, the write signal Vw can be given to the signal line S, and the read signal Vr can be read from the detection electrode DE. Further, by switching each control switch CSW to the second switching state, the potential adjustment signal Va can be given to the signal line S.

The timing of switching each control switch CSW of the multiplexer MU to either the first switching state or the second switching state by the control signals Vcsw1, Vcsw2, Vcsw3, Vcsw4, and the first connection of each detection switch DS by the drive signal CS. By controlling the timing of switching to either the state or the second connection state, the write signal Vw is written to the plurality of detection electrodes DE and the read signal Vr from the plurality of detection electrodes DE is written in a time-division manner. Can be read and performed.

Further, by using the multiplexer MU as described above, the write signal Vw is given to each of the first signal line S1 and the fifth signal line S5 in the same period, while the second to fourth signal lines S2 to S2 to The potential adjustment signal Va can be given to each of S4 and the sixth to eighth signal lines S6 to S8. Since the fluctuation of the potential difference between all the signal lines S and the common electrode CE can be suppressed, the decrease in sensor sensitivity can be further suppressed.
In the sensor SE, instead of the multiplexer MU, various conventionally known multiplexers (selector circuits) can be used as the second circuit. For example, the sensor SE can utilize a 1/3 multiplexer.

FIG. 6 is an equivalent circuit diagram showing the electrical connection relationship of the sensor SE.
As shown in FIG. 6, the control module CM includes a main control unit MC and a first detection unit DU1. The main control unit MC is a central processing unit.
The main control unit MC transmits a control signal Vc to the analog front end AFE to control the drive of the analog front end AFE. Further, the main control unit MC receives the data signal Vd from the analog front end AFE. As the data signal Vd, a signal based on the read signal Vr can be mentioned, and in this case, it is a signal obtained by converting the read signal Vr, which is an analog signal, into a digital signal. Further, the main control unit MC transmits a synchronization signal Vs to the analog front end AFE, the circuit control signal source CC, and the power supply control unit PC to drive the analog front end AFE, the circuit control signal source CC, and the power supply control unit PC. We are trying to synchronize. Examples of the synchronization signal Vs include a vertical synchronization signal TSVD and a horizontal synchronization signal TSHD.

The analog front-end AFE transmits the potential adjustment signal Va and the write signal Vw to the multiplexer MU, and receives the read signal Vr from the multiplexer MU. For example, the conversion of the read signal Vr into a digital signal is performed by the analog front-end AFE. Further, the analog front-end AFE inputs a pulse signal (detection pulse) to be superimposed on the circuit control signal source CC and the power supply control unit PC. The pulse signal is synchronized with the potential adjustment signal Va and is the same as the potential adjustment signal Va in terms of phase and amplitude.
The circuit control signal source CC gives a control signal Vcsw (Vcsw1, Vcsw2, Vcsw3, Vcsw4) to the multiplexer MU, and transmits a reset signal STB, a start pulse signal STV, and a clock signal CKV to the control line drive circuit CD.
The power supply control unit PC supplies the control line drive circuit CD with a high-potential power supply voltage Vdd and a relatively low-potential power supply voltage Vss.

The control line drive circuit CD has a plurality of shift registers SR and a plurality of control switch COS connected to the plurality of shift registers SR on a one-to-one basis. Further, inside the control line drive circuit CD, a high-potential power supply line Wd to which the power supply voltage Vdd is given and a low-potential power supply line Ws to which the power supply voltage Vss is given extend. The plurality of control switches COS are sequentially controlled via the shift register 72, and are switched to a state in which the high potential power supply line Wd and the control line C are connected or a state in which the low potential power supply line Ws and the control line C are connected. .. In the present embodiment, the drive signal CS is a power supply voltage Vdd or a power supply voltage Vss.

FIG. 7 is a circuit diagram showing the detector DT of the sensor SE. In this embodiment, the detector DT is formed on the analog front-end AFE shown in FIG. A plurality of detectors DT are formed on the analog front end AFE. The number of detector DTs is, for example, the same as the number of connection lines W1. In this case, the detector DT is connected to the connection line W1 on a one-to-one basis.
As shown in FIG. 7, the detector DT has an integrator IN, a reset switch RST, a switch SW1, and a switch SW2. The integrator IN has an operational amplifier AMP and a capacitor CON. In this example, the capacitor CON is connected to the non-inverting input terminal of the operational amplifier AMP. The reset switch RST is connected in parallel to the capacitor CON. The switch SW1 is connected between the signal source and the connection line W1. The switch SW1 switches whether to give a write signal Vw from the signal source SG to the detection electrode DE via the connection line W1 or the like. The switch SW2 is connected between the connection line W1 and the non-inverting input terminal of the operational amplifier AMP. The switch SW2 switches whether or not to input the read signal Vr to the non-inverting input terminal.

When using the detector DT as described above, first, the switch SW1 is turned on, the switch SW2 is turned off, and the write signal Vw is written to the detection electrode DE via the connection line W1 or the like. Next, after the switch SW1 is turned off, the switch SW2 is turned on, and the read signal Vr taken out from the detection electrode DE via the connection line W1 or the like is input to the non-inverting input terminal. The integrator IN integrates the input voltage (read signal Vr) over time. As a result, the integrator IN can output a voltage proportional to the input voltage as an output signal Vout. After that, by turning off the reset switch RST, the electric charge of the capacitor CON is released and the value of the output signal Vout is reset.

Next, a method of driving the sensor SE will be described exemplary. FIG. 8 is a timing chart for explaining the driving method of the sensor SE according to the present embodiment, in which a part of the F frame period and a part of the F + 1 frame period. It is a figure which shows the reset signal STB, the start pulse signal STV, the clock signal CKV, the control signal Vcsw1, Vcsw2, Vcsw3, Vcsw4, the vertical synchronization signal TSVD, the horizontal synchronization signal TSHD, and the write signal Vw.
As shown in FIG. 8, one frame period (1F) is a vertical scanning period, which corresponds to 122 consecutive horizontal scanning periods. Each horizontal scanning period (1H) is defined based on the clock signal CKV. Each frame period is defined based on the vertical sync signal TSVD.

In the 119th horizontal scanning period of the F frame period, which is the Fth one frame period, the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4 based on the horizontal synchronization signal TSHD are given to the multiplexer MU from the first detection unit DU1. As a result, the first control switch CSW1, the second control switch CSW2, the third control switch CSW3, and the fourth control switch CSW4 are time-divisioned from the second switching state to the first switching state (connection line W1 and signal line). It is switched to the state of connecting with S).
Further, during this horizontal scanning period, an on-level drive signal CS (power supply voltage Vdd) is given from the control line drive circuit CD to the 119th control line C119, and an off-level drive signal is given to the control lines C other than the 119th control line C119. Gives CS (power supply voltage Vss). As a result, the writing of the write signal Vw to the detection electrodes DE of the plurality of pixels on the 119th line and the reading of the read signal Vr from the plurality of detection electrodes DE can be performed in a time-division manner.

Even in the 120th horizontal scanning period of the F frame period, the first detection unit DU1 gives the control signals Vcsw1, Vcsw2, Vcsw3, Vcsw4 to the multiplexer MU, and the first control switch CSW1, the second control switch CSW2, and the third control switch The CSW3 and the fourth control switch CSW4 are time-divisionally switched from the second switching state to the first switching state.
Further, during this horizontal scanning period, an on-level drive signal CS (power supply voltage Vdd) is given from the control line drive circuit CD to the 120th control line C120, and an off-level drive signal is given to the control lines C other than the 120th control line C120. Gives CS (power supply voltage Vss). As a result, the writing of the write signal Vw to the detection electrodes DE of the plurality of pixels on the 120th line (final line) and the reading of the read signal Vr from the plurality of detection electrodes DE can be performed in a time-division manner. can.
As a result, it is possible to perform sensing for one frame in the F frame.
Then, in the 122nd horizontal scanning period after the 121st horizontal scanning period of the F frame period has elapsed, a start pulse signal STV is generated based on the vertical synchronization signal TSVD, and the 122nd horizontal scanning period After the lapse, the F + 1 frame period is entered.

F + 1 In the first horizontal scanning period of the F + 1 frame period, which is the first frame period, the first control switch CSW1, the second control switch CSW2, and the third control switch CSW3 are based on the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4. , And the fourth control switch CSW4 is time-divisionally switched from the second switching state to the first switching state.
Further, during this horizontal scanning period, an on-level drive signal CS (power supply voltage Vdd) is given from the control line drive circuit CD to the first control line C1, and an off-level drive signal is given to the control lines C other than the first control line C1. Gives CS (power supply voltage Vss). Thereby, the writing of the writing signal Vw to the detection electrodes DE of the plurality of pixels in the first row and the reading of the reading signal Vr from the plurality of detection electrodes DE can be performed in a time-division manner.
After that, every one horizontal scanning period (1H), the writing signal Vw of the plurality of pixels for one line is written to the detection electrode DE, and the reading signal Vr is read from the plurality of detection electrodes DE. Thereby, for example, the first detection unit DU1 (control module CM) can detect the fingerprint information of the finger when the finger touches or approaches the input surface IS.

Next, various signals given to the first substrate SUB1 by the first detection unit DU1 will be described. As described above, in the present embodiment, the above-mentioned various signals have features. FIG. 9 is a timing chart for explaining various signals and voltages used for driving the sensor SE, and is a horizontal synchronization signal TSHD, a write signal Vw, a potential adjustment signal Va, a control signal Vcsw1 (Vcsw), and a power supply voltage Vdd. , And the power supply voltage Vss. The various signals and voltages shown in FIG. 9 are exemplified.

As shown in FIG. 9, the write signal Vw is a pulse signal, the high level potential is 3 V, the low level potential is 0 V, and the amplitude is 3 V.
As the potential adjustment signal Va, a signal that is synchronized with the write signal Vw and has the same phase and amplitude as the write signal Vw is preferable to a constant voltage fixed at 0 V or the like. The amplitude of the potential adjustment signal Va may be 3V. In this example, the high-level potential of the potential adjustment signal Va is 3V, the low-level potential is 0V, and the potential adjustment signal Va is the same signal as the write signal Vw, but is not limited to this. It is deformable. As another example, the high-level potential of the potential adjustment signal Va may be 6V and the low-level potential may be 3V.

The write signal Vw and the potential adjustment signal Va are the same with respect to the timing of switching to the high level potential and the timing of switching to the low level potential. In the same time period, the area of the write signal Vw shaded and the area of the potential adjustment signal Va shaded are the same. Even after a lapse of time, the difference between the potential of the write signal Vw and the potential of the potential adjustment signal Va is constant, and is 0 V in this embodiment.
As a result, the fluctuation of the potential difference between the signal line S to which the write signal Vw or the potential adjustment signal Va is given and the common electrode CE, and the potential difference between the detection electrode DE and the common electrode CE to which the write signal Vw or the potential adjustment signal Va is given. Fluctuations can be suppressed.

The control signal Vcsw has a high-level potential for switching the detection switch DS to the first switching state (the state of connecting the connection line W1 and the signal line S) and the detection switch DS to the second switching state (the connection line W2). It has a low-level potential for switching to a state in which it is connected to the signal line S). In this embodiment, the high level potential of the control signal Vcsw is 3V and the low level potential is -3V.
However, as the control signal Vcsw, it is desirable that the superimposed signal is superimposed on the pulse signal rather than the pulse signal. The superimposed signal is synchronized with the write signal Vw and is the same as the write signal Vw in terms of phase and amplitude. The shaded area of the control signal Vcsw is superimposed on the control signal Vcsw. Therefore, when the superimposed signal is superimposed on the high level potential of the control signal Vcsw, the potential of the control signal Vcsw becomes 6 V at the maximum, and when the superimposed signal is superimposed on the low level potential of the control signal Vcsw, the control signal Vcsw The maximum potential is 0V.
Thereby, the fluctuation of the potential difference between the control line C to which the control signal Vcsw is given and the common electrode CE can be suppressed.

The power supply voltage Vdd is given to the control line drive circuit CD, and has a potential for switching the detection switch DS to the first connection state (the state in which the signal line S and the detection electrode DE are connected). In the present embodiment, the potential of the power supply voltage Vdd for switching the detection switch DS to the first connection state is 3V.
However, as the power supply voltage Vdd, it is desirable that the superimposed signal is superimposed on the above constant voltage rather than the above high potential constant voltage. The shaded area of the power supply voltage Vdd is superimposed on the power supply voltage Vdd. Therefore, when the superimposed signal is superimposed on the constant voltage of the power supply voltage Vdd, the potential of the power supply voltage Vdd becomes 6 V at the maximum.
As a result, it is possible to suppress fluctuations in the potential difference between the wiring (high potential power supply line Wd, etc.) to which the power supply voltage Vdd is applied and the common electrode CE.

The power supply voltage Vss is given to the control line drive circuit CD, and switches the detection switch DS to the second connection state (the state in which the signal line S and the detection electrode DE are insulated and the auxiliary wiring A and the detection electrode DE are connected). Has a potential for In the present embodiment, the potential of the power supply voltage Vss for switching the detection switch DS to the second connection state is -3V.
However, as the power supply voltage Vss, it is desirable that the superimposed signal is superimposed on the above constant voltage rather than the above low potential constant voltage. The shaded area of the power supply voltage Vss is superimposed on the power supply voltage Vss. Therefore, when the superimposed signal is superimposed on the constant voltage of the power supply voltage Vss, the potential of the power supply voltage Vdd becomes 0 V at the maximum.
As a result, it is possible to suppress fluctuations in the potential difference between the wiring (low potential power supply line Ws, etc.) to which the power supply voltage Vss is applied and the common electrode CE.

According to the sensor SE and the driving method of the sensor SE according to the first embodiment configured as described above, the sensor SE includes the control line C, the signal line X, the detection switch DS, the common electrode CE, and the common electrode CE. It includes a detection electrode DE, a control line drive circuit CD as a first circuit, and a multiplexer MU as a second circuit. The common electrode CE is located above and opposed to the control line C, the signal line S, the detection switch DS, the control line drive circuit CD, and the multiplexer MU. The common electrode CE is formed so as to extend not only to the active area AA but also to the outside of the active area AA. The detection electrode DE is located above the common electrode CE and faces the common electrode CE.

The common electrode CE can electrically shield the detection electrode DE not only inside the active area AA but also outside the active area AA. That is, since it is possible to prevent parasitic capacitance from being generated in the detection electrode DE, it is possible to suppress a decrease in sensor sensitivity.
The first detection unit DU1 (control module CM) can adjust the signal and voltage given to the first substrate SUB1. By controlling the potential of the conductive member (wiring, etc.) below the common electrode CE, it is possible to make it difficult for parasitic capacitance to occur in the common electrode CE, and it is possible to suppress the potential fluctuation of the common electrode CE. As a result, the decrease in sensor sensitivity can be further suppressed.
From the above, it is possible to obtain a sensor SE having excellent detection accuracy and a method for driving the sensor SE.

(Second Embodiment)
Next, the sensor SE and the driving method of the sensor SE according to the second embodiment will be described. FIG. 10 is an equivalent circuit diagram showing an electrical connection relationship between the four pixels of the sensor SE according to the second embodiment and various wirings.
As shown in FIG. 10, the sensor SE according to the second embodiment is formed without the auxiliary wiring A, and the detection switch DS is formed without the second switching element (DS1b, DS2b, DS3b, DS4b). Therefore, it is different from the sensor SE according to the first embodiment. In the present embodiment, the shield electrode SH may be electrically provided in a floating state, or the sensor SE may be formed without the shield electrode SH. By switching the detection switch DS to the second connection state, the signal line S and the detection electrode DE can be insulated, and the detection electrode DE can be switched to the electrically floating state.
Also in this embodiment, the potential adjustment signal Va can be given to the common electrode CE. For example, the potential adjustment signal Va can be given to the common electrode CE via the wiring provided outside the active area AA.
The method for driving the sensor SE is different from the method for driving the sensor SE according to the first embodiment described above in that the potential adjustment signal Va is not given to the signal line S from the first detection unit DU1. ing. However, as a method for driving the sensor SE according to the present embodiment, the method for driving the sensor SE according to the first embodiment described above can be roughly applied.

According to the sensor SE and the driving method of the sensor SE according to the second embodiment configured as described above, the sensor SE includes the control line C, the signal line X, the detection switch DS, the common electrode CE, and the sensor SE. It includes a detection electrode DE, a control line drive circuit CD, and a multiplexer MU. Therefore, the same effect as that of the first embodiment can be obtained in the second embodiment.
At the time of sensing drive, the detection electrode DE, which is not the target for writing the write signal Vw, can be switched to the electrically floating state. Also in this case, it is possible to make it difficult for parasitic capacitance to occur in the common electrode CE, and it is possible to suppress the potential fluctuation of the common electrode CE. As a result, it is possible to suppress a decrease in sensor sensitivity.
From the above, it is possible to obtain a sensor SE having excellent detection accuracy and a method for driving the sensor SE.

(Third Embodiment)
Next, the sensor SE and the driving method of the sensor SE according to the third embodiment will be described. FIG. 11 is a timing chart for explaining the driving method of the sensor SE according to the third embodiment, and shows the clock signal CKV, the control signals Vcsw1, Vcsw2, Vcsw3, Vcsw4, and the control signals Vcsw1, Vcsw4, and the control signals Vcsw1, Vcsw4, in one horizontal scanning period (1H). It is a figure which shows the horizontal synchronization signal TSHD. The sensor SE according to the present embodiment is formed in the same manner as the sensor SE according to the first embodiment described above.

As shown in FIG. 11, in any one horizontal scanning period (1H), the control signals Vcsw1, Vcsw2, Vcsw3, and Vcsw4 cause each of the plurality of control switch CSWs of the multiplexer MU to be in the first switching state and the second switching state. In addition, it differs from the above-described first embodiment in that it can be switched alternately and a plurality of times. The frequency of the pulse of the horizontal synchronization signal TSHD can be the same as that of the first embodiment. In this case, the time period of one horizontal scanning period (1H) is longer than that of the first embodiment described above.
In one horizontal scanning period (1H), the same detection electrode DE is targeted for sensing, and a set of writing a write signal Vw to the same detection electrode DE and reading a read signal Vr from the detection electrode DE is performed a plurality of times. Can be done. The read signal Vr read from the same detection electrode DE can be integrated by the detector DT and output as an output signal Vout.

According to the sensor SE and the driving method of the sensor SE according to the third embodiment configured as described above, the sensor SE includes the control line C, the signal line X, the detection switch DS, the common electrode CE, and the sensor SE. It includes a detection electrode DE, a control line drive circuit CD, and a multiplexer MU. Therefore, the same effect as that of the first embodiment can be obtained in the third embodiment.
When the sensing is driven, the read signal Vr read a plurality of times can be integrated from the same detection electrode DE. By integrating a plurality of read signals Vr, the level of the output signal Vout can be increased as compared with the case of reading a single read signal Vr. For example, the difference between the value of the output signal Vout when the convex portion of the fingerprint faces the detection electrode DE and the value of the output signal Vout when the concave portion of the fingerprint faces the detection electrode DE can be increased. As a result, the detected portion such as a fingerprint can be sensed in more detail.
From the above, it is possible to obtain a sensor SE having excellent detection accuracy and a method for driving the sensor SE.

(Fourth Embodiment)
Next, the sensor SE and the driving method of the sensor SE according to the fourth embodiment will be described. FIG. 12 is an enlarged plan view showing a part of the outside of the active area AA of the first substrate SUB1 of the sensor SE according to the fourth embodiment, and is a circuit diagram showing the multiplexer MU.
As shown in FIG. 12, in the sensor SE according to the fourth embodiment, the multiplexer MU has a plurality of fifth control switches CSW5, a plurality of sixth control switches CSW6, and two control lines W7 and W8. Further, it is different from the sensor SE according to the first embodiment in that it is provided.

Each control switch group CSWG further has a fifth control switch CSW5. The second electrode of the third control switch CSW3 and the second electrode of the fourth control switch CSW4 are connected via the fifth control switch CSW5. The gate electrode (first electrode) of the fifth control switch CSW5 is connected to the control line W7. The conductive type of the thin film transistor forming the fifth control switch CSW5 is not particularly limited, but in the present embodiment, the fifth control switch CSW5 is formed of a P-channel type thin film transistor. A control signal Vcsw5 is given to the control line W7 from the first detection unit DU1. The fifth control switch CSW5 is switched to either a conductive state or a non-conducting state by the control signal Vcsw5.

The adjacent control switch group CSWG is connected via the sixth control switch CSW6. For example, the second electrode of the fourth control switch CSW4 of the first control switch group CSWG1 and the second electrode of the first control switch CSW1 of the second control switch group CSWG2 are connected via the sixth control switch CSW6. There is. The gate electrode (first electrode) of the sixth control switch CSW6 is connected to the control line W8. The conductive type of the thin film transistor forming the sixth control switch CSW6 is not particularly limited, but in the present embodiment, the sixth control switch CSW6 is formed of an N-channel type thin film transistor. A control signal Vcsw6 is given to the control line W8 from the first detection unit DU1. The sixth control switch CSW6 is switched to either a conductive state or a non-conducting state by the control signal Vcsw6.

Next, a method of driving the sensor SE will be described.
In the sensor SE driving method according to the first embodiment described above, the write signal Vw is independently written to the single detection electrode DE via one connection line W1 during one sensing period during the sensing drive. The case where sensing is performed by independently reading the read signal Vr from the detection electrode DE has been described as an example. Also in the fourth embodiment, it is possible to perform sensing in the same manner as in the first embodiment. However, in the fourth embodiment, by adding the plurality of fifth control switches CSW5 and the plurality of sixth control switches CSW6 to the multiplexer MU, sensing may be performed by a method different from that of the first embodiment. It is possible.

Next, a method of driving the sensor SE peculiar to the fourth embodiment will be roughly described.
In the fourth embodiment, during the first sensing period during the sensing drive for sensing, the multiplexer is connected to the four detection electrodes DE located in the nth row and the n + 1th row of the mth column and the m + 1th column. The write signal Vw is simultaneously written via the MU, the corresponding two signal lines S, and the corresponding four detection switch DSs, and the read signal Vr indicating the change in the write signal Vw is read from each of the four detection electrodes DE. A plurality of read signals Vr read and read are bundled into one signal. By using the four detection electrodes DE, the electrode area can be expanded and the electric field strength can be increased for sensing.

Next, in the second sensing period following the first sensing period, the multiplexer MU and the corresponding two are attached to the four detection electrodes DE located in the nth row and the n + 1th row of the m + 1th column and the m + 2nd column. The write signal Vw is simultaneously written via the signal line S of the above and the corresponding four detection switches DS, and the read signal Vr indicating the change of the write signal is read from each of the four detection electrodes DE, and a plurality of read readings are read. The signal Vr is bundled into one signal. That is, in the first direction X, sensing can be performed by shifting the range by only one row.
Then, the first detection unit DU1 completes sensing for the plurality of detection electrodes DE located in the nth row and the n + 1th row at the time of sensing drive, and then a plurality of plurality of detection electrode DEs located in the n + 1th row and the n + 2nd row. Shift to sensing targeting the detection electrode DE. Even in the second direction Y, since the sensing can be performed by shifting the range by only one line, the resolution level of the first embodiment described above can be maintained.

Next, a method of driving the sensor SE according to the fourth embodiment will be described with reference to FIGS. 13 to 17. 13 to 17 are circuit diagrams for exemplifying a method of driving the sensor SE according to the fourth embodiment. Note that FIGS. 13 to 17 show only the main part of the first substrate SUB1 necessary for explanation. Further, the detection switch DS will be described as a switch for switching the connection state between the signal line S and the detection electrode DE. The control switch CSW will be described as a switch for switching the connection state between the signal line S and the connection line W1.

As shown in FIG. 13, under the control of the control module CM, the control line drive circuit CD simultaneously sends an on-level drive signal CS (power supply voltage Vdd) to the first control line C1 and the second control line C2. Then, an off-level drive signal CS (power supply voltage Vss) is given to the control lines C other than the first control line C1 and the second control line C2. As a result, the detection switches DS on the first and second rows are in a conductive state. Further, in the multiplexer MU, the first control switch CSW1 and the second control switch CSW2 are brought into a conductive state, and the third control switch CSW3 and the fourth control switch CSW4 are brought into a non-conducting state. The sixth control switch CSW6 is also in a non-conducting state.
As a result, of the detection electrodes DE in the first and second rows, four adjacent detection electrodes DE with diagonal lines are electrically bundled. The write signal Vw is given to the first signal line S1, the second signal line S2, the fifth signal line S5, and the sixth signal line S6 among the first to eighth signal lines S1 to S8. As a result, the write signal Vw can be written and the read signal Vr can be read collectively for each of the four detection electrodes DE bundled via one connection line W1.

As shown in FIG. 14, in the subsequent sensing period, the detection switch DSs in the first and second rows are in a conductive state. Further, in the multiplexer MU, the second control switch CSW2 and the third control switch CSW3 are brought into a conductive state, and the first control switch CSW1 and the fourth control switch CSW4 are brought into a non-conducting state. The sixth control switch CSW6 is also in a non-conducting state.
As a result, of the detection electrodes DE in the first and second rows, four adjacent detection electrodes DE with diagonal lines are electrically bundled. Compared with FIG. 13, it can be seen that the four bundled detection electrodes DE are offset by one row. The write signal Vw is given to the second signal line S2, the third signal line S3, the sixth signal line S6, and the seventh signal line S7 among the first to eighth signal lines S1 to S8. As a result, the write signal Vw can be written and the read signal Vr can be read collectively for each of the four detection electrodes DE bundled via one connection line W1.

As shown in FIG. 15, in the subsequent sensing period, the detection switch DSs in the first and second rows are in a conductive state. Further, in the multiplexer MU, the third control switch CSW3 and the fourth control switch CSW4 are brought into a conductive state, and the first control switch CSW1 and the second control switch CSW2 are brought into a non-conducting state. The fifth control switch CSW5 is in a conductive state, and the sixth control switch CSW6 is in a non-conducting state.
As a result, of the detection electrodes DE in the first and second rows, four adjacent detection electrodes DE with diagonal lines are electrically bundled. Compared with FIG. 14, it can be seen that the bundled four detection electrodes DE are further offset by one row. The write signal Vw is given to the third signal line S3, the fourth signal line S4, the seventh signal line S7, and the eighth signal line S8 among the first to eighth signal lines S1 to S8. As a result, the write signal Vw can be written and the read signal Vr can be read collectively for each of the four detection electrodes DE bundled via one connection line W1.

As shown in FIG. 16, in the subsequent sensing period, the detection switch DSs in the first and second rows are in a conductive state. Further, in the multiplexer MU, the fourth control switch CSW4 and the first control switch CSW1 are brought into a conductive state, and the second control switch CSW2 and the third control switch CSW3 are brought into a non-conducting state. The fifth control switch CSW5 is in a non-conducting state, and the sixth control switch CSW6 is in a conductive state.
As a result, of the detection electrodes DE in the first and second rows, two or four adjacent detection electrodes DE with diagonal lines are electrically bundled. Compared with FIG. 15, it can be seen that the bundled four detection electrodes DE are further offset by one row. The write signal Vw is given to the first signal line S1, the fourth signal line S4, the fifth signal line S5, and the eighth signal line S8 among the first to eighth signal lines S1 to S8. As a result, the write signal Vw can be written and the read signal Vr can be read collectively for the two or four detection electrodes DE bundled together via one connection line W1. can.
Then, the first detection unit DU1 ends sensing for the plurality of detection electrodes DE located in the first and second rows. After that, the first detection unit DU1 shifts to sensing targeting a plurality of detection electrodes DE located in the second and third rows.

As shown in FIG. 17, under the control of the control module CM, the control line drive circuit CD simultaneously sends an on-level drive signal CS (power supply voltage Vdd) to the second control line C2 and the third control line C3. Then, an off-level drive signal CS (power supply voltage Vss) is given to the control lines C other than the second control line C2 and the third control line C3. As a result, the detection switch DSs on the second and third rows are in a conductive state. Further, in the multiplexer MU, the first control switch CSW1 and the second control switch CSW2 are brought into a conductive state, and the third control switch CSW3 and the fourth control switch CSW4 are brought into a non-conducting state. The sixth control switch CSW6 is also in a non-conducting state.
As a result, of the detection electrodes DE in the second and third rows, four adjacent detection electrodes DE with diagonal lines are electrically bundled. The write signal Vw is given to the first signal line S1, the second signal line S2, the fifth signal line S5, and the sixth signal line S6 among the first to eighth signal lines S1 to S8. As a result, the write signal Vw can be written and the read signal Vr can be read collectively for each of the four detection electrodes DE bundled via one connection line W1.
Then, also in the sensing of the second row and the third row, the detection electrodes DE can be bundled and sensed while shifting by one column. Also in the second direction Y, sensing is performed by shifting the range by only one line.

According to the sensor SE and the driving method of the sensor SE according to the fourth embodiment configured as described above, the sensor SE includes the control line C, the signal line X, the detection switch DS, the common electrode CE, and the sensor SE. It includes a detection electrode DE, a control line drive circuit CD, and a multiplexer MU. Therefore, the same effect as that of the first embodiment can be obtained in the fourth embodiment.
At the time of sensing drive, the first detection unit DU1 collectively writes the write signal Vw and reads the read signal Vr to the bundled four (or two) detection electrodes DE. Can be done. Therefore, it is possible to perform sensing by expanding the electrode area and increasing the electric field strength.
Further, at that time, the sensing can be performed by shifting the range by only one row in the first direction X, and by shifting the range by only one row in the second direction Y as well. Therefore, it is possible to suppress or prevent a decrease in sensing resolution.

Further, also in the fourth embodiment, as in the third embodiment described above, the first detection unit DU1 may adjust the drive of the first substrate SUB1 and integrate the read signal Vr. As a result, the detected portion such as a fingerprint can be sensed in more detail.
When bundling or shifting a plurality of detection electrode DEs, a total of nine detection electrode DEs in three adjacent rows and three adjacent rows may be bundled and shifted one column at a time or one row at a time. .. Alternatively, a total of 16 detection electrode DEs of 4 adjacent rows and 4 adjacent rows may be bundled and shifted one column at a time or one row at a time.
From the above, it is possible to obtain a sensor SE having excellent detection accuracy and a method for driving the sensor SE.

(Fifth Embodiment)
Next, the liquid crystal display device according to the fifth embodiment will be described. In the present embodiment, the liquid crystal display device is a liquid crystal display device with a sensor. FIG. 18 is a perspective view showing the configuration of the liquid crystal display device according to the fifth embodiment.
As shown in FIG. 18, the liquid crystal display device DSP includes an active matrix type liquid crystal display panel PNL, a drive IC IC1 for driving the liquid crystal display panel PNL, a backlight unit BL for illuminating the liquid crystal display panel PNL, a control module CM, and flexible. It is equipped with wiring boards FPC1, FPC3, and the like.

The liquid crystal display panel PNL is a liquid crystal display sandwiched between a flat plate-shaped first substrate SUB1, a flat plate-shaped second substrate SUB2 arranged to face the first substrate SUB1, and the first substrate SUB1 and the second substrate SUB2. It has layers and. In the present embodiment, the first substrate SUB1 can be paraphrased as an array substrate, and the second substrate SUB2 can be paraphrased as an opposed substrate.
As the first substrate SUB1, the first substrate SUB1 according to the above-described embodiment can be applied. However, in the present embodiment, since the first substrate SUB1 is applied to the liquid crystal display panel PNL, it can be deformed as needed. For example, the first substrate SUB1 may have an alignment film on the surface in contact with the liquid crystal layer. In addition, the functions of the members constituting the first substrate SUB1 may differ from those of the above-described embodiment. For example, among the members described above, the detection electrode DE also functions as a pixel electrode, and the detection switch DS also functions as a pixel switch. The signal line S further has a function of transmitting an image signal (for example, a video signal) to the detection electrode DE via the detection switch DS.
In the present specification, the detection electrode DE is a pixel electrode (PE), the detection switch DS is a pixel switch (PSW), the control line C is a scanning line (G), and the control line drive circuit CD is a scanning line. It may be paraphrased as a drive circuit (GD).

The liquid crystal display panel PNL includes a display area DA for displaying an image. The display area DA corresponds to the active area AA of the above-described embodiment. The liquid crystal display panel PNL is a transmissive type having a transmissive display function for displaying an image by selectively transmitting the backlight from the backlight unit BL. The liquid crystal display panel PNL may be a semi-transmissive type having a reflection display function for displaying an image by selectively reflecting external light in addition to the transmission display function.
As shown in FIG. 19, the liquid crystal display panel PNL has a configuration corresponding to an IPS (In-Plane Switching) mode that mainly utilizes a transverse electric field substantially parallel to the main surface of the substrate, such as an FFS mode. The main surface of the substrate here is a surface parallel to the XY plane defined by the first direction X and the second direction Y. In the present embodiment, both the pixel electrode PE and the common electrode CE are provided on the first substrate SUB1. In order to form the lateral electric field, for example, each pixel electrode PE has a slit SL at a position facing the common electrode CE. In the illustrated example, the pixel electrode PE is connected to a first pixel switch PSW1 having a first switching element PSW1a and a second switching element PSW1b.
Therefore, the liquid crystal display panel PNL can be formed by using the generally known TFT liquid crystal process as it is.

As shown in FIG. 18, the backlight unit BL is arranged on the back side of the first substrate SUB1. As such a backlight unit BL, various forms can be applied, and one using a light emitting diode (LED) as a light source can be applied, and the detailed structure will be omitted. If the liquid crystal display panel PNL is a reflective type having only a reflective display function, the backlight unit BL is omitted.
The liquid crystal display device DSP may include the cover member CG described above. For example, the cover member CG can be provided above the outer surface on the screen side for displaying the image of the liquid crystal display panel PNL. Here, the outer surface is a surface of the second substrate SUB2 opposite to the surface facing the first substrate SUB1, and includes a display surface for displaying an image.

The drive IC IC1 as the first drive unit is mounted on the first substrate SUB1 of the liquid crystal display panel PNL. Drive IC IC1 is connected to the above-mentioned multiplexer MU and scanning line drive circuit. Although the common electrode CE does not face the drive IC IC1, it is formed so as to extend outside the display area DA and faces the multiplexer MU and the scanning line drive circuit. The flexible wiring board FPC1 connects the liquid crystal display panel PNL and the control module CM. The control module CM gives a signal or voltage to the drive IC IC1. The flexible wiring board FPC3 connects the backlight unit BL and the control module CM.

Next, a method of driving the liquid crystal display device DSP according to the fifth embodiment will be described.
In the fifth embodiment, the liquid crystal display device DSP can perform a display drive for displaying an image and a sensing drive for sensing.
At the time of display drive, the common electrode drive circuit can give a common drive signal to the common electrode CE. The common electrode drive circuit can be formed in, for example, the drive IC IC1. As the common drive signal (common voltage), a constant voltage such as 0V can be exemplified. On the other hand, an image signal can be given to the pixel electrodes by a drive IC IC1, a multiplexer MU, a scanning line drive circuit, or the like.

On the other hand, in the sensing drive, a sensing period can be provided in the blanking period between the display periods in which the display drive is performed. Examples of the blanking period include a horizontal blanking period and a vertical blanking period. The first detection unit DU1 sets a plurality of pixel electrodes located in a part of the display area DA as the sensing target during the sensing drive for sensing. In the present embodiment, a plurality of pixel electrodes located in the sensing region SA of the display region DA are preset as sensing targets. As a result, the sensing may be performed within the range of the sensing area SA, and it is not necessary to perform the sensing in the entire display area DA. For example, the time period related to sensing can be shortened. In addition, deterioration of display quality outside the sensing region SA can be suppressed.

The first detection unit DU1 writes a write signal Vw to each of the plurality of pixel electrodes located in the sensing region SA via the multiplexer MU, the corresponding signal line S, and the corresponding pixel switch, and from each of the plurality of pixel electrodes. The read signal Vr indicating the change in the write signal is read. As a result, the detected portion can be sensed. Such sensing is preferable when detecting fingerprints.
Also in this embodiment, it is desirable to give the potential adjustment signal Va to the common electrode CE during the sensing period because the decrease in sensor sensitivity can be suppressed.
Alternatively, instead of forming the common electrode CE with a single electrode, the common electrode CE is formed with a plurality of electrodes provided at a distance of electrical insulation between the sensing region SA and the region other than the sensing region SA. You may. As a result, the potential adjustment signal Va can be given to the electrodes (common electrode CE) in the sensing region SA, and the common drive signal can be given to the electrodes (common electrode CE) in the regions other than the sensing region SA. As a result, it is possible to suppress a decrease in display quality outside the sensing region SA while suppressing a decrease in sensor sensitivity.

According to the driving method of the liquid crystal display device DSP with a sensor and the liquid crystal display device DSP with a sensor according to the fifth embodiment configured as described above, the liquid crystal display device DSP is the same as the sensor SE according to the above-described embodiment. , A scanning line, a signal line X, a pixel switch, a common electrode CE, a pixel electrode, a scanning line drive circuit, and a multiplexer MU. Therefore, even in the fifth embodiment, the same effect as that of the first embodiment can be obtained.
Further, the wiring, electrodes, switches, circuits and the like used for displaying an image can also be used for sensing. Therefore, it is possible to suppress the addition of a member for sensing to the liquid crystal display device DSP.
Also in the fifth embodiment, it is possible to switch between the first mode (self-capacity mode) and the second mode (mutual capacity mode) for sensing.
From the above, it is possible to obtain a method for driving the liquid crystal display device DSP with a sensor and the liquid crystal display device DSP with a sensor, which are excellent in detection accuracy.

(Sixth Embodiment)
Next, the liquid crystal display device DSP according to the sixth embodiment will be described. In the present embodiment, the liquid crystal display device is a liquid crystal display device with a sensor.
In the fifth embodiment described above, the display drive and the sensing drive are performed, and in the sensing drive, the area to be sensed is specified as a part of the display area DA. On the other hand, in the sixth embodiment, the display drive and the sensing drive are performed, and the position detection drive for specifying the position of the detected portion is performed. As a result, after the region where the detected portion is located can be specified by the position detection drive, the specific region can be sensed by the sensing drive. For example, the region where the detected portion is located can be specified by the position detection drive, and the uneven pattern of the detected portion can be detected by the sensing drive.

To identify the position of the detected portion, the position detection sensor PSE located in the display area DA of the liquid crystal display panel PNL is used. The position detection sensor PSE is different from the sensor that detects the uneven pattern of the detected portion. A second detection unit DU2 is connected to the position detection sensor PSE. The second detection unit DU2 drives the position detection sensor PSE at the time of the position detection drive for detecting the position information of the detected unit, and detects the position information of the detected unit. The position detection sensor PSE is driven by a second detection unit DU2, which is different from the first detection unit DU1. The first detection unit DU1 sets a plurality of pixel electrodes in the region where the detected portion is located as a sensing target based on the above-mentioned position information when the sensing is driven to detect the uneven pattern of the detected portion.

The electrode of the position detection sensor PSE used to specify the position of the detected portion can be selected from various electrodes of the liquid crystal display device DSP.
For example, the common electrode CE can be selected as the electrode of the position detection sensor PSE. In this case, the common electrode CE is formed of a plurality of electrodes. For example, the plurality of electrodes are arranged in a matrix. The second detection unit DU2 writes the first signal Wr to each of the above electrodes, and reads the second signal Re indicating the change of the first signal from each of the above electrodes. As described above, the position information of the detected portion can be detected in the self-capacity mode.

Alternatively, as the electrodes of the position detection sensor PSE, a plurality of position detection electrodes Rx added to the liquid crystal display device DSP can be selected. For example, the plurality of position detection electrodes Rx are arranged in a matrix. The second detection unit DU2 writes the first signal Wr to each position detection electrode Rx, and reads the second signal Re indicating the change of the first signal from each position detection electrode Rx. As described above, the position information of the detected portion can be detected in the self-capacity mode.

Alternatively, as the electrode of the position detection sensor PSE, a combination of the common electrode CE and a plurality of position detection electrodes Rx added to the liquid crystal display device DSP can be selected. For example, the plurality of position detection electrodes Rx and the plurality of electrodes of the common electrode CE are provided so as to intersect with each other. The second detection unit DU2 writes the first signal Wr to each electrode of the common electrode CE, and reads the second signal Re from each position detection electrode Rx. As described above, the position information of the detected portion can be detected in the mutual capacitance mode.
Hereinafter, in the present embodiment, a combination of a common electrode CE and a plurality of position detection electrodes Rx is selected as the electrode of the position detection sensor PSE, and the position information of the detected portion is detected in the mutual capacitance mode. It is explained as.

First, the configuration of the liquid crystal display device according to the sixth embodiment will be described. FIG. 20 is a perspective view showing the configuration of the liquid crystal display device DSP with a sensor according to the sixth embodiment.
As shown in FIG. 20, the liquid crystal display device DSP drives an active matrix type liquid crystal display panel PNL, a drive IC IC1 for driving the liquid crystal display panel PNL, a capacitance type position detection sensor PSE, and a position detection sensor PSE. It is equipped with a drive IC IC2, a backlight unit BL, a control module CM, a flexible wiring board FPC1, FPC2, FPC3 and the like. In the present embodiment, the drive IC IC1 and the drive IC IC2 form a second detection unit DU2. The liquid crystal display panel PNL includes a first substrate SUB1, a second substrate SUB2, and a liquid crystal layer.

The drive IC IC1 as the first drive unit is mounted on the first substrate SUB1 of the liquid crystal display panel PNL. The flexible wiring board FPC1 connects the liquid crystal display panel PNL and the control module CM. The flexible wiring board FPC2 connects the position detection electrode Rx of the position detection sensor PSE and the control module CM. Drive IC IC2 as a second drive unit is mounted on the flexible wiring board FPC2.

The drive IC IC1 and the drive IC IC2 are connected via a flexible wiring board FPC2 or the like. For example, when the flexible wiring board FPC2 has a branch portion FPCB connected on the first board SUB1, the drive IC IC1 and the drive IC IC2 are connected via the branch portion FPCB and the wiring on the first board SUB1. It may have been done. Further, the drive IC IC1 and the drive IC IC2 may be connected via the flexible wiring boards FPC1 and FPC2.

The drive IC IC 2 can give the drive IC IC 1 a timing signal informing the drive timing of the position detection sensor PSE. Alternatively, the drive IC IC1 can give a timing signal to the drive IC IC2 notifying the drive timing of the common electrode CE, which will be described later. Alternatively, the control module CM can give a timing signal to the drive ICs IC1 and IC2. By the above timing signal, the drive of the drive IC IC1 and the drive of the drive IC IC2 can be synchronized.

Next, the operation during the position detection drive for performing the position detection for detecting the contact or approach of the detected portion to the screen of the liquid crystal display device DSP will be described. That is, a position detection sensor drive signal is given to the common electrode CE from the common electrode drive circuit. In such a state, the position detection sensor PSE receives the sensor signal from the common electrode CE to perform position detection.

Here, the principle of an example of position detection will be described with reference to FIG.
As shown in FIG. 21, the position detection sensor PSE includes a plurality of position detection electrodes Rx and a common electrode CE. The common electrode CE includes a plurality of split electrodes CEa. The position detection electrode Rx is located at least in the display region DA. The location where the position detection electrode Rx is provided is not particularly limited, but the position detection electrode Rx can be provided on the second substrate SUB2 or the cover member CG. In this case, by forming the position detection electrode Rx with a thin wire or forming it in a mesh shape, a gap can be formed between the position detection electrodes Rx or inside the position detection electrode Rx. Then, through the gap, the detected portion and the pixel electrode can be capacitively coupled. A capacitance Cc exists between the split electrode CEa and the position detection electrode Rx. That is, the position detection electrode Rx is capacitively coupled to the split electrode CEa (common electrode CE). A pulsed first signal (sensor drive signal) Wr is sequentially supplied to each of the dividing electrodes CEa at a predetermined cycle. In this example, it is assumed that the user's finger exists close to the position where the specific position detection electrode Rx and the dividing electrode CEa intersect. The capacitance Cx is generated by the user's finger in the vicinity of the position detection electrode Rx. When the pulsed first signal Wr is supplied to the dividing electrode CEa, the pulsed second signal (sensor output) having a lower level than the pulse obtained from the other position detection electrodes is sent from the specific position detection electrode Rx. Value) Re is obtained. The second signal Re is obtained via the lead wire. That is, when detecting the input position information which is the position information of the user's finger in the display area DA, the drive IC IC1 (common electrode drive circuit) supplies the first signal Wr to the common electrode CE (divided electrode CEa). Then, a sensor signal is generated between the common electrode CE and the position detection electrode Rx. The drive IC IC2 is connected to the position detection electrode Rx and reads a second signal Re indicating a change in the sensor signal (for example, the capacitance generated in the position detection electrode Rx).

The drive IC IC2 or the control module CM is the XY plane of the position detection sensor PSE based on the timing at which the first signal Wr is supplied to the dividing electrode CEa and the second signal Re from each position detection electrode Rx. It is possible to detect the two-dimensional position information of the finger inside. Further, the above-mentioned capacitance Cx differs depending on whether the finger is close to the position detection electrode Rx or far from the position detection electrode Rx. Therefore, the level of the second signal Re also differs depending on whether the finger is close to the position detection electrode Rx or far from the position detection electrode Rx. Therefore, in the drive IC IC2 or the control module CM, the proximity of the finger to the position detection sensor PSE (distance in the third direction Z orthogonal to the first direction X and the second direction Y) based on the level of the second signal Re. Can also be detected.
As described above, the second detection unit DU2 drives the position detection sensor PSE at the time of the position detection drive for detecting the position information of the finger, and detects the position information of the finger. At the time of position detection drive, the pixel electrode is switched to the electrically floating state.

Next, the first detection unit DU1 sets a plurality of pixel electrodes in the region where the finger is located as a sensing target based on the position information at the time of sensing drive for detecting the fingerprint of the finger. The first detection unit DU1 writes a write signal Vw to each of the plurality of pixel electrodes of the target via a multiplexer MU, a corresponding signal line S, and a corresponding pixel switch, and a write signal from each of the plurality of pixel electrodes. The read signal Vr indicating the change in is read. The first detection unit DU1 supplies the common electrode CE with a potential adjustment signal Va that is synchronized with the write signal Vr and has the same phase and amplitude as the write signal Vr.

According to the driving method of the liquid crystal display device DSP with a sensor and the liquid crystal display device DSP with a sensor according to the sixth embodiment configured as described above, the liquid crystal display device DSP is the same as the sensor SE according to the above-described embodiment. , A scanning line, a signal line X, a pixel switch, a common electrode CE, a pixel electrode, a scanning line drive circuit, and a multiplexer MU. Therefore, even in the sixth embodiment, the same effect as that of the first embodiment can be obtained.
The liquid crystal display device DSP further includes a position detection sensor PSE and a second detection unit DU2. As a result, it is not necessary to finely sense the entire display area DA with the pixel fineness, so that the time required for sensing can be shortened.

Also in this embodiment, fingerprints can be detected by bundling or shifting a plurality of detection electrodes DE. Further, in the present embodiment, the plurality of detection electrodes DE may be bundled or shifted to detect the position information of the finger. In this case, the addition of the position detection electrode Rx, the second detection unit DU2, and the like to the liquid crystal display device DSP can be omitted.
From the above, it is possible to obtain a method for driving the liquid crystal display device DSP with a sensor and the liquid crystal display device DSP with a sensor, which are excellent in detection accuracy.

(7th Embodiment)
Next, the liquid crystal display device DSP according to the seventh embodiment will be described. In the present embodiment, the liquid crystal display device is a liquid crystal display device with a sensor.
As shown in FIG. 22, unlike the fifth embodiment (FIG. 18), the sensing region SA is located outside the display region DA. The display drive in the display area DA and the sensing drive in the sensing area SA can be performed independently. Further, as compared with the case where the sensing area SA is set in a part of the display area DA, the deterioration of the display quality in the display area DA can be suppressed.

When forming the first substrate SUB1, the display region DA and the sensing region SA can be formed by using the same manufacturing process. Explaining with reference to FIGS. 4 and 19 described above, for example, the pixel electrode PE in the display region DA and the detection electrode DE in the sensing region SA can be provided in the same layer. Here, the pixel electrode PE and the detection electrode DE are provided on the fourth insulating film 14.
Also in the seventh embodiment, it is possible to switch between the first mode (self-capacity mode) and the second mode (mutual capacity mode) for sensing.
From the above, also in the seventh embodiment, it is possible to obtain a method for driving the liquid crystal display device DSP with a sensor and the liquid crystal display device DSP with a sensor, which are excellent in detection accuracy.

(8th Embodiment)
Next, the liquid crystal display device DSP according to the eighth embodiment will be described. In the present embodiment, the liquid crystal display device is a liquid crystal display device with a sensor.
As shown in FIG. 23, a plurality of pixels PX are arranged in a matrix in the display area DA. These pixels PX are surrounded by a plurality of scanning lines G connected to the scanning line driving circuit GD and a plurality of signal lines S connected to the multiplexer MU.

A sensing area SA is set in a part of the display area DA. The inside of the sensing region SA is configured in the same manner as the inside of the active area AA shown in FIG. Therefore, also in this embodiment, the pixel electrode PE and the detection electrode DE can be provided in the same layer.
From the above, also in the eighth embodiment, it is possible to obtain a method for driving the liquid crystal display device DSP with a sensor and the liquid crystal display device DSP with a sensor, which are excellent in detection accuracy.

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

For example, the multiplexer MU may be configured as shown in FIG. Compared with the multiplexer MU shown in FIG. 5, the multiplexer MU of the modified example shown in FIG. 24 is formed at the point where each control switch CSW is formed by a single N-channel type thin film transistor and without a connecting line W2. It differs in that it is done. Each control switch CSW is switched between a state in which the connection line W1 and the signal line S are connected and a state in which the signal line S is switched to an electrically floating state.

The drive IC IC1 and the drive IC IC2 may be integrally formed. That is, the drive IC IC1 and the drive IC IC2 may be integrated into a single drive IC.
The control unit of the circuit, drive IC, control module, etc. described above is not limited to the control line drive circuit CD (scanning line drive circuit), the multiplexer MU, the control module CM, and the drive ICs IC1 and IC2. Anything that is possible and can electrically control the first substrate SUB1 (liquid crystal display panel PNL) and the position detection electrode Rx (position detection sensor PSE) may be used.

In the above-described embodiment, a liquid crystal display device is disclosed as an example of the display device. However, the above-described embodiment can be applied to any flat panel type display device such as an organic EL (electroluminescent) display device, other self-luminous display device, or an electronic paper type display device having an electrophoretic element or the like. .. Needless to say, the above-described embodiment can be applied to small and medium-sized display devices to large-sized display devices without particular limitation.
Hereinafter, the invention described in the original application of the application of the present application will be added.
[1] The first control line and
The first signal line and
A first detection switch connected to the first control line and the first signal line,
Located above the first control line, the first signal line and the first detection switch, facing the first control line, the first signal line and the first detection switch, and the first detection switch. With a common electrode having a first opening facing each other,
A first detection electrode located above the common electrode, facing the first opening, and connected to the first detection switch through the first opening.
A first connection located below the common electrode, facing the common electrode, connected to the first control line, and connecting the first detection switch to the first signal line and the first detection electrode. A first circuit that gives a drive signal to the first control line to switch between a state and a second connection state that insulates the first signal line and the first detection electrode.
A sensor located below the common electrode, facing the common electrode, and comprising a second circuit connected to the first signal line.
[2] In a state where a potential adjustment signal is given to the common electrode, the drive of the first circuit and the second circuit is controlled, and the first detection switch is switched to the first connection state by the drive signal. A first detection unit that writes a write signal to the first detection electrode via the second circuit, the first signal line, and the first detection switch, and reads a read signal indicating a change in the write signal from the first detection electrode. With more
The sensor according to [1], wherein the potential adjustment signal is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude during the sensing drive for sensing.
[3] The first detection unit applies a power supply voltage to the first circuit.
At the time of the sensing drive, the superimposed signal is superimposed on the drive signal and the power supply voltage, respectively.
The sensor according to [2], wherein the superimposed signal is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude.
[4] The first detection unit gives a control signal to the second circuit.
At the time of the sensing drive, the superimposed signal is superimposed on the control signal,
The sensor according to [2], wherein the superimposed signal is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude.
[5] An auxiliary wiring located on the opposite side of the first detection electrode with respect to the common electrode, facing the common electrode, and connected to the first detection unit.
A shield electrode located on the opposite side of the common electrode with respect to the first signal line, facing the first signal line, and connected to the auxiliary wiring is further provided.
The sensor according to [2], wherein the first detection unit further supplies the potential adjustment signal to the shield electrode via the auxiliary wiring.
[6] An auxiliary wiring located on the opposite side of the first detection electrode with respect to the common electrode, facing the common electrode and connected to the first detection unit is further provided.
The common electrode is connected to the auxiliary wiring at a plurality of places, and is connected to the auxiliary wiring.
The sensor according to [2], wherein the first detection unit gives the potential adjustment signal to the common electrode via the auxiliary wiring.
[7] The second signal line connected to the second circuit and
A second detection switch connected to the first control line and the second signal line,
A second detection electrode located above the common electrode is further provided.
The common electrode is located above the second signal line and the second detection switch, faces the second signal line and the second detection switch, and further opens a second opening facing the second detection switch. Have and
The second detection electrode faces the second opening and is connected to the second detection switch through the second opening.
The first detection unit gives a control signal and the potential adjustment signal to the second circuit, and receives the control signal and the potential adjustment signal.
The second circuit is switched to either a first switching state in which the write signal is given to the first signal line or a second switching state in which the potential adjustment signal is given to the first signal line by the control signal. A second switching state in which the control switch is switched to either a first switching state in which the write signal is given to the second signal line or a second switching state in which the potential adjustment signal is given to the second signal line by the control signal. With a control switch,
The first detection unit is
During one sensing period during the sensing drive,
The first control switch is switched to the first switching state by the control signal, the second control switch is switched to the second switching state, and the first detection switch and the first detection switch are switched by the drive signal, respectively. 1 Switch to the connected state,
The write signal is written to the first detection electrode via the first control switch, the first signal line, and the first detection switch, and the read signal indicating a change in the write signal is read from the first detection electrode.
The sensor according to [2], which supplies the potential adjustment signal to the second detection electrode via the second control switch, the second signal line, and the second detection switch.
[8] A second control line connected to the first circuit and
A third detection switch connected to the second control line and the first signal line,
Auxiliary wiring connected to the first detection unit, the first detection switch, and the third detection switch,
A third detection electrode located above the common electrode is further provided.
The common electrode is located above the second control line, the third detection switch, and the auxiliary wiring, faces the second control line, the third detection switch, and the auxiliary wiring, and meets the third detection switch. Further having a third opening facing each other
The third detection electrode faces the third opening and is connected to the third detection switch through the third opening.
The first circuit gives the drive signal to the second control line.
The first detection switch connects the first signal line and the first detection electrode in the first connection state, and connects the auxiliary wiring and the first detection electrode in the second connection state. ,
The third detection switch is in a first connection state for connecting the first signal line and the third detection electrode and a second connection state for connecting the auxiliary wiring and the third detection electrode by the drive signal. Switch to either one,
The first detection unit is
During one sensing period during the sensing drive,
The first detection switch is switched to the first connection state by the drive signal, and the third detection switch is switched to the second connection state.
The write signal is written to the first detection electrode via the first signal line and the first detection switch, and the read signal indicating a change in the write signal is read from the first detection electrode.
The sensor according to [2], which supplies the potential adjustment signal to the third detection electrode via the auxiliary wiring and the third detection switch.
[9] A plurality of control lines extending in the row direction and
Multiple signal lines extending in the column direction and
A plurality of detection switches, each of which is a plurality of detection switches connected to one control line and one signal line.
A common having a plurality of openings located above the plurality of control lines, the plurality of signal lines, and the plurality of detection switches, facing the plurality of control lines, the plurality of signal lines, and the plurality of detection switches. The common electrode, which is an electrode, each of which faces one of the detection switches.
A plurality of detection electrodes located above the common electrode, each of which is opposed to the corresponding aperture and is connected to the corresponding detection switch through the opening with the plurality of detection electrodes. ,
It is located below the common electrode, faces the common electrode, is connected to the plurality of control lines, gives a drive signal to each of the control lines, and sets each of the detection switches to the signal line and the detection electrode. The first circuit that switches between the first connection state for connecting the signals and the second connection state for insulating the signal line and the detection electrode.
A second circuit located below the common electrode, facing the common electrode, and connected to the plurality of signal lines.
A first detection unit that gives a potential adjustment signal to the common electrode and controls the drive of the first circuit and the second circuit is provided.
The first detection unit is
During the first sensing period during the sensing drive for sensing, the second circuit and the corresponding two are attached to the four detection electrodes located in the nth row and the n + 1th row of the mth column and the m + 1th column. A write signal is simultaneously written via a signal line and four corresponding detection switches, a read signal indicating a change in the write signal is read from each of the four detection electrodes, and a plurality of read signals are read as one signal. Bundled in
During the second sensing period during the sensing drive following the first sensing period, the second circuit, The write signal is simultaneously written via the corresponding two signal lines and the corresponding four detection switches, and a plurality of read signals indicating changes in the write signal are read from each of the four detection electrodes. Bundle the read signal into one signal,
A sensor in which, during the sensing drive, the potential adjustment signal is synchronized with the write signal and is identical in phase and amplitude to the write signal.
[10] The first detection unit is
During the sensing drive, after the sensing for the plurality of detection electrodes located on the nth row and the n + 1th row is completed, the sensing shifts to the sensing for the plurality of detection electrodes located on the n + 1th row and the n + 2nd row. The sensor according to [9].
[11] With a plurality of control lines
With multiple signal lines,
A plurality of pixel switches, each of which is connected to one control line and one signal line, and the plurality of pixel switches.
The display area and the plurality of control lines, the plurality of signal lines, the plurality of signal lines, the plurality of signal lines, and the plurality of control lines, which are formed outside the display area and are located above the plurality of control lines, the plurality of signal lines, and the plurality of pixel switches. A common electrode that faces a pixel switch and has a plurality of openings, and each of the openings faces the pixel switch.
A plurality of pixel electrodes formed in the display region and located above the common electrode, each of which is opposed to the corresponding opening and connected to the corresponding pixel switch through the opening. With the plurality of pixel electrodes
It is formed outside the display area, is located below the common electrode, faces the common electrode, is connected to the plurality of control lines, gives a drive signal to each of the control lines, and provides each of the pixel switches. A first circuit that switches between a first connection state that connects the signal line and the pixel electrode and a second connection state that insulates the signal line and the pixel electrode.
A display panel comprising a second circuit formed outside the display area, located below the common electrode, facing the common electrode, and connected to the plurality of signal lines.
A display device with a sensor.
[12] A first detection unit connected to the display panel and controlling the drive of the first circuit and the second circuit is further provided.
The first detection unit is used during sensing drive for sensing.
A plurality of pixel electrodes located in a part of the display area are set as sensing targets, and the second circuit, the corresponding signal line, and the corresponding pixel switch are attached to each of the plurality of target pixel electrodes. A write signal is written via, and a read signal indicating a change in the write signal is read from each of the plurality of pixel electrodes.
The display device with a sensor according to [11], wherein a potential adjustment signal that is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude is given to the common electrode.
[13] A first detection unit connected to the display panel and controlling the drive of the first circuit and the second circuit, and
A position detection sensor located in the display area of the display panel and
A second detection unit connected to the position detection sensor is further provided.
The second detection unit drives the position detection sensor at the time of the position detection drive for detecting the position information of the detected unit, detects the position information of the detected unit, and detects the position information of the detected unit.
The first detection unit sets a plurality of pixel electrodes in the region where the detected portion is located as a sensing target based on the position information at the time of sensing drive for detecting the uneven pattern of the detected portion, and the target. A write signal is written to each of the plurality of pixel electrodes of the above via the second circuit, the corresponding signal line, and the corresponding pixel switch, and a read signal indicating a change in the write signal is read from each of the plurality of pixel electrodes. The sensor-equipped display device according to [11], wherein a potential adjustment signal that is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude is given to the common electrode.
[14] A detection electrode located above the common electrode is further provided.
The display device with a sensor according to [11], wherein the plurality of pixel electrodes and the detection electrode are provided in the same layer.
[15] With a plurality of control lines
With multiple signal lines,
A plurality of pixel switches, each of which is connected to one control line and one signal line, and the plurality of pixel switches.
A plurality of pixel electrodes located in the display area and provided above the plurality of control lines, the plurality of signal lines, and the plurality of pixel switches.
The plurality of control lines, the plurality of signal lines, and detection electrodes provided above the plurality of pixel switches.
A first connection provided outside the display area, connected to the plurality of control lines, giving a drive signal to each of the control lines, and connecting each of the pixel switches to the signal line and the pixel electrode. A first circuit that switches between a state and a second connection state that insulates the signal line and the pixel electrode.
A display panel provided with a second circuit provided outside the display area and connected to the plurality of signal lines.
A display device with a sensor, wherein the plurality of pixel electrodes and the detection electrode are provided in the same layer.

SE ... sensor, DSP ... liquid crystal display device, PNL ... liquid crystal display panel, CM ... control module, DU1 ... first detection unit, SUB1 ... first board, 10 ... first insulating board, C ... control line, S ... signal line , A ... Auxiliary wiring, DS ... Detection switch, CE ... Common electrode, OP ... Opening, DE ... Detection electrode, SH ... Shield electrode, PSE ... Position detection sensor, Rx ... Position detection electrode, CD ... Control line drive circuit, MU ... multiplexer, CSW ... control switch, IC1, IC2 ... drive IC, DU2 ... second detection unit, AA ... active area, DA ... display area, SA ... sensing area, Vw ... write signal, Vr ... read signal, Va ... potential Adjustment signal V, Vcsw ... control signal, CS ... drive signal, Vdd, Vss ... power supply voltage, X ... first direction, Y ... second direction.

Claims (20)

With the first insulating substrate
Multiple first control lines and
Multiple first signal lines and
With multiple first auxiliary wiring
With a plurality of first detection electrodes,
Each connecting one of the first detection electrode of the plurality of first detection electrodes, one of the first control line of said plurality of first control lines, one of the first signal line及beauty said plurality of first signal lines Multiple first detection switches
Each includes a plurality of first shield electrodes connected to the first auxiliary wiring of one of the plurality of first auxiliary wirings .
The plurality of first control lines, the plurality of first signal lines, the plurality of first auxiliary wirings, the plurality of first detection electrodes, the plurality of first detection switches, and the plurality of first shield electrodes are Formed above the first insulating substrate,
The plurality of first detection electrodes and the plurality of first detection switches are arranged in a matrix in the row direction and the column direction intersecting each other, respectively.
Each of the first control lines is connected to a plurality of first detection switches arranged in the row direction among the plurality of first detection switches.
Each of the first signal lines is connected to a plurality of first detection switches arranged in the column direction among the plurality of first detection switches.
Each of the front Symbol first shield electrode, in plan view, overlaps the first signal line of a corresponding one of the plurality of first signal lines through the insulation Enmaku sensor. Each connecting one of the first detection electrode of the plurality of first detection electrodes, one of the first control line of said plurality of first control lines, one of the first auxiliary wiring及beauty the plurality of first auxiliary wiring further example Bei a plurality of second detection switch that is,
The sensor according to claim 1, wherein the plurality of second detection switches are formed above the first insulating substrate. Is connected before Symbol plurality of first control line, prior Symbol a plurality of first detection switch and the second detection switch before Symbol plurality, before a drive signal for switching to either of the first and second connection states The first circuit given to a plurality of first control lines and
Further comprising a second circuit connected to the previous SL plurality of first signal lines and a prior SL plurality of first auxiliary wiring, the sensor of claim 2. The first control line and
The first signal line and
With the first auxiliary wiring
The first detection electrode and
The first detection electrode, the first control line, and the first detection switch connected to the first signal line,
The first shield electrode connected to the first auxiliary wiring and
The first detection electrode, the first control line, and the second detection switch connected to the first auxiliary wiring,
A first circuit connected to the first control line and giving a drive signal to the first control line to switch the first detection switch and the second detection switch to either the first connection state or the second connection state. When,
The first signal line and the second circuit connected to the first auxiliary wiring are provided.
The first shield electrode is superimposed on the first signal line via an insulating film, and the first shield electrode is superposed on the first signal line.
The second circuit writes a write signal to the first detection electrode via the first signal line and the first detection switch, and reads a read signal indicating a change in the write signal from the first detection electrode. A potential adjustment signal is given to the first auxiliary wiring,
When sensing driven to perform sensing, the potential adjustment signal is the write signal synchronized with the signal, sensor. A first detection unit that applies a power supply voltage to the first circuit is further provided.
At the time of the sensing drive, the superimposed signal is superimposed on the drive signal and the power supply voltage, respectively.
The sensor according to claim 4, wherein the superimposed signal is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude. A first detection unit that gives a control signal to the second circuit is further provided.
At the time of the sensing drive, the superimposed signal is superimposed on the control signal,
The sensor according to claim 4, wherein the superimposed signal is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude. The first control line and
The first signal line and
With the first auxiliary wiring
The first detection electrode and
The first detection electrode, the first control line, and the first detection switch connected to the first signal line,
The first shield electrode connected to the first auxiliary wiring and
The first detection electrode, the first control line, and the second detection switch connected to the first auxiliary wiring,
A first circuit connected to the first control line and giving a drive signal to the first control line to switch the first detection switch and the second detection switch to either the first connection state or the second connection state. When,
A second circuit connected to the first signal line and the first auxiliary wiring,
The second signal line connected to the second circuit and
The second detection electrode and
The second detection electrode, the first control line, and the third detection switch connected to the second signal line,
E Bei and a second shield electrode connected to the first auxiliary wiring,
The first shield electrode is superimposed on the first signal line via an insulating film, and the first shield electrode is superposed on the first signal line.
It said second shield electrode overlaps the second signal line via the insulating film, sensor. The second detection electrode, the first control line, and the fourth detection switch connected to the first auxiliary wiring,
The sensor according to claim 7, further comprising a first detection unit that supplies a control signal to the second circuit. The second circuit writes a write signal to the first detection electrode via the first signal line and the first detection switch, and reads a read signal indicating a change in the write signal from the first detection electrode. A potential adjustment signal is given to the first auxiliary wiring,
At the time of sensing drive for sensing, the potential adjustment signal is a signal synchronized with the write signal.
The second circuit includes a first control switch that can be switched to either a first switching state in which the write signal is given to the first signal line or a second switching state in which the potential adjustment signal is given to the first signal line. A second control switch that can be switched to either a first switching state that gives the write signal to the second signal line or a second switching state that gives the potential adjustment signal to the second signal line. Item 8. The sensor according to Item 8. The second circuit is used during one sensing period during the sensing drive.
The first control switch is switched to the first switching state by the control signal, the second control switch is switched to the first switching state, and the first detection switch and the second detection switch are first connected by the drive signal. The state is switched, and the third detection switch and the fourth detection switch are switched to the first connection state by the drive signal.
The write signal is written to the first detection electrode via the first control switch, the first signal line, and the first detection switch, and the read signal indicating a change in the write signal is transmitted from the first detection electrode. reading,
The second control switch, the second signal line及beauty the third through the detection switch, writes the write signal to the second detection electrode, the read signal from the second detection electrode shows the change of the write signal 9. The sensor according to claim 9. Equipped with a display panel
The display panel,
With the first insulating substrate
Multiple first control lines and
Multiple first signal lines and
With multiple first auxiliary wiring
With a plurality of first detection electrodes,
Each connecting one of the first detection electrode of the plurality of first detection electrodes, one of the first control line of said plurality of first control lines, one of the first signal line及beauty said plurality of first signal lines Multiple first detection switches
Each includes a plurality of first shield electrodes connected to the first auxiliary wiring of one of the plurality of first auxiliary wirings .
The plurality of first control lines, the plurality of first signal lines, the plurality of first auxiliary wirings, the plurality of first detection electrodes, the plurality of first detection switches, and the plurality of first shield electrodes are Formed above the first insulating substrate,
The plurality of first detection electrodes and the plurality of first detection switches are arranged in a matrix in the row direction and the column direction intersecting each other, respectively.
Each of the first control lines is connected to a plurality of first detection switches arranged in the row direction among the plurality of first detection switches.
Each of the first signal lines is connected to a plurality of first detection switches arranged in the column direction among the plurality of first detection switches.
Before each Symbol first shield electrode, in plan view, through the insulation Enmaku overlaps the first signal line of a corresponding one of the plurality of first signal lines, a sensor-equipped display device. The display panel
Each connecting one of the first detection electrode of the plurality of first detection electrodes, one of the first control line of said plurality of first control lines, one of the first auxiliary wiring及beauty the plurality of first auxiliary wiring further example Bei a plurality of second detection switch that is,
The display device with a sensor according to claim 11, wherein the plurality of second detection switches are formed above the first insulating substrate. The display panel
Is connected before Symbol plurality of first control line, prior Symbol a plurality of first detection switch and the second detection switch before Symbol plurality, before a drive signal for switching to either of the first and second connection states The first circuit given to a plurality of first control lines and
Further comprising a second circuit connected to the previous SL plurality of first signal lines and a prior SL plurality of first auxiliary wiring, and the sensor-equipped display device according to claim 12. Equipped with a display panel
The display panel
The first control line and
The first signal line and
With the first auxiliary wiring
The first detection electrode and
The first detection electrode, the first control line, and the first detection switch connected to the first signal line,
The first shield electrode connected to the first auxiliary wiring and
The first detection electrode, the first control line, and the second detection switch connected to the first auxiliary wiring,
A first circuit connected to the first control line and giving a drive signal to the first control line to switch the first detection switch and the second detection switch to either the first connection state or the second connection state. When,
The first signal line and the second circuit connected to the first auxiliary wiring are provided.
The first shield electrode is superimposed on the first signal line via an insulating film, and the first shield electrode is superposed on the first signal line.
The second circuit writes a write signal to the first detection electrode via the first signal line and the first detection switch, and reads a read signal indicating a change in the write signal from the first detection electrode. A potential adjustment signal is given to the first auxiliary wiring,
When sensing driven to perform sensing, the potential adjustment signal, wherein a write signal synchronized with the signal, sensor-equipped display device. The display panel further includes a first detection unit that supplies a power supply voltage to the first circuit.
At the time of the sensing drive, the superimposed signal is superimposed on the drive signal and the power supply voltage, respectively.
The display device with a sensor according to claim 14, wherein the superimposed signal is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude. The display panel further comprises a first detection unit that supplies a control signal to the second circuit.
At the time of the sensing drive, the superimposed signal is superimposed on the control signal,
The display device with a sensor according to claim 14, wherein the superimposed signal is synchronized with the write signal and is the same as the write signal in terms of phase and amplitude. Equipped with a display panel
The display panel
The first control line and
The first signal line and
With the first auxiliary wiring
The first detection electrode and
The first detection electrode, the first control line, and the first detection switch connected to the first signal line,
The first shield electrode connected to the first auxiliary wiring and
The first detection electrode, the first control line, and the second detection switch connected to the first auxiliary wiring,
A first circuit connected to the first control line and giving a drive signal to the first control line to switch the first detection switch and the second detection switch to either the first connection state or the second connection state. When,
A second circuit connected to the first signal line and the first auxiliary wiring,
The second signal line connected to the second circuit and
The second detection electrode and
The second detection electrode, the first control line, and the third detection switch connected to the second signal line,
E Bei and a second shield electrode connected to the first auxiliary wiring,
The first shield electrode is superimposed on the first signal line via an insulating film, and the first shield electrode is superposed on the first signal line.
It said second shield electrode overlaps the second signal line via the insulating film, sensor-equipped display device. The display panel
The second detection electrode, the first control line, and the fourth detection switch connected to the first auxiliary wiring,
The display device with a sensor according to claim 17, further comprising a first detection unit that supplies a control signal to the second circuit. The second circuit writes a write signal to the first detection electrode via the first signal line and the first detection switch, and reads a read signal indicating a change in the write signal from the first detection electrode. A potential adjustment signal is given to the first auxiliary wiring,
At the time of sensing drive for sensing, the potential adjustment signal is a signal synchronized with the write signal.
The second circuit includes a first control switch that can be switched to either a first switching state in which the write signal is given to the first signal line or a second switching state in which the potential adjustment signal is given to the first signal line. A second control switch that can be switched to either a first switching state that gives the write signal to the second signal line or a second switching state that gives the potential adjustment signal to the second signal line. Item 18. The display device with a sensor according to Item 18. The second circuit is used during one sensing period during the sensing drive.
The first control switch is switched to the first switching state by the control signal, the second control switch is switched to the first switching state, and the first detection switch and the second detection switch are first connected by the drive signal. The state is switched, and the third detection switch and the fourth detection switch are switched to the first connection state by the drive signal.
The write signal is written to the first detection electrode via the first control switch, the first signal line, and the first detection switch, and the read signal indicating a change in the write signal is transmitted from the first detection electrode. reading,
The second control switch, the second signal line及beauty the third through the detection switch, writes the write signal to the second detection electrode, the read signal from the second detection electrode shows the change of the write signal The sensor-equipped display device according to claim 19.

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