CN111742413A - 薄膜晶体管及其制造方法、栅极驱动电路、平板显示器 - Google Patents
薄膜晶体管及其制造方法、栅极驱动电路、平板显示器 Download PDFInfo
- Publication number
- CN111742413A CN111742413A CN201880083236.2A CN201880083236A CN111742413A CN 111742413 A CN111742413 A CN 111742413A CN 201880083236 A CN201880083236 A CN 201880083236A CN 111742413 A CN111742413 A CN 111742413A
- Authority
- CN
- China
- Prior art keywords
- layer
- drain
- source
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 125000006850 spacer group Chemical group 0.000 claims abstract description 34
- 238000000926 separation method Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 347
- 238000010586 diagram Methods 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
一种薄膜晶体管及其制造方法、栅极驱动电路、平板显示器,该薄膜晶体管包括基底(11);设置于该基底(11)上的源极层(12)和漏极层(14)二者之一;设置于该源极层(12)和漏极层(14)二者之一上的绝缘分隔层(13);设置于该绝缘分隔层(13)上的源极层(12)和漏极层(14)二者之另一;覆盖于该源极层(12)和漏极层(14)二者之一、该绝缘分隔层(13)以及该源极层(12)和漏极层(14)二者之另一上,并将该源极层(12)和漏极层(14)二者之一与该源极层(12)和漏极层(14)二者之另一导电连接的有源层(15);设置于该有源层(15)上的栅极绝缘层(16);以及设置在该栅极绝缘层(16)上的栅极层(17)。有益效果为:源极层和漏极层呈垂直布置,能够有效地降低沟道长度,从而降低薄膜晶体管的尺寸。
Description
PCT国内申请,说明书已公开。
Claims (13)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2018/074589 WO2019148327A1 (zh) | 2018-01-30 | 2018-01-30 | 薄膜晶体管及其制造方法、栅极驱动电路、平板显示器 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111742413A true CN111742413A (zh) | 2020-10-02 |
Family
ID=67477875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880083236.2A Pending CN111742413A (zh) | 2018-01-30 | 2018-01-30 | 薄膜晶体管及其制造方法、栅极驱动电路、平板显示器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN111742413A (zh) |
WO (1) | WO2019148327A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397579A (zh) * | 2020-10-22 | 2021-02-23 | 云谷(固安)科技有限公司 | 显示面板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009070862A (ja) * | 2007-09-11 | 2009-04-02 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
CN103378163A (zh) * | 2012-04-12 | 2013-10-30 | 元太科技工业股份有限公司 | 薄膜晶体管、阵列基板与显示装置 |
CN107482064A (zh) * | 2017-08-28 | 2017-12-15 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管及其制作方法以及阵列基板 |
CN107591480A (zh) * | 2017-09-01 | 2018-01-16 | 深圳市华星光电技术有限公司 | 像素结构垂直沟道有机薄膜晶体管及其制作方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101774478B1 (ko) * | 2010-10-22 | 2017-09-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
GB201321285D0 (en) * | 2013-12-03 | 2014-01-15 | Plastic Logic Ltd | Pixel driver circuit |
-
2018
- 2018-01-30 CN CN201880083236.2A patent/CN111742413A/zh active Pending
- 2018-01-30 WO PCT/CN2018/074589 patent/WO2019148327A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009070862A (ja) * | 2007-09-11 | 2009-04-02 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
CN103378163A (zh) * | 2012-04-12 | 2013-10-30 | 元太科技工业股份有限公司 | 薄膜晶体管、阵列基板与显示装置 |
CN107482064A (zh) * | 2017-08-28 | 2017-12-15 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管及其制作方法以及阵列基板 |
CN107591480A (zh) * | 2017-09-01 | 2018-01-16 | 深圳市华星光电技术有限公司 | 像素结构垂直沟道有机薄膜晶体管及其制作方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397579A (zh) * | 2020-10-22 | 2021-02-23 | 云谷(固安)科技有限公司 | 显示面板 |
CN112397579B (zh) * | 2020-10-22 | 2022-12-06 | 云谷(固安)科技有限公司 | 显示面板 |
Also Published As
Publication number | Publication date |
---|---|
WO2019148327A1 (zh) | 2019-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10014491B2 (en) | Organic light-emitting diode display and manufacturing method thereof | |
US9025108B2 (en) | Display apparatus | |
JP2016194703A5 (zh) | ||
US10013102B2 (en) | Touch panel using multiple kinds of touch electrodes, method for driving the touch panel, and touch display device thereof | |
CN108630735B (zh) | 驱动基板和显示面板 | |
RU2444068C2 (ru) | Подложка активной матрицы и жидкокристаллическое устройство отображения | |
US9318539B2 (en) | Organic light emitting diode display device and manufacturing method thereof | |
US10049626B2 (en) | Pixel structure | |
EP1998373A3 (en) | Semiconductor device having oxide semiconductor layer and manufacturing method thereof | |
US9583512B2 (en) | Array substrate and manufacturing method thereof, and display panel | |
WO2017004949A1 (zh) | 阵列基板、显示面板以及显示装置 | |
TWI618042B (zh) | 驅動電路及顯示面板 | |
TW201413918A (zh) | 半導體裝置及其製造方法 | |
WO2017012462A1 (en) | Array substrate, method for fabricating the same, and display apparatus containing the same | |
US20180145090A1 (en) | Tft substrate and touch display panel using same | |
CN111742413A (zh) | 薄膜晶体管及其制造方法、栅极驱动电路、平板显示器 | |
US10884542B2 (en) | Display device | |
US8928827B2 (en) | Liquid crystal display | |
US9812469B2 (en) | Array substrate having a plurality of gate electrode material lines, source-drain electrode material lines and first metal lines | |
US9647002B2 (en) | Array substrate, manufacture method thereof, and display device with the array substrate | |
JP2009047729A (ja) | 液晶表示パネル | |
WO2013170657A1 (zh) | 像素结构、双栅像素结构及显示装置 | |
CN113488488B (zh) | 阵列基板 | |
CN110690228B (zh) | 阵列基板及显示面板 | |
TW201512752A (zh) | 畫素結構及其製造方法以及顯示面板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20201002 |
|
WD01 | Invention patent application deemed withdrawn after publication |