CN111725099B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN111725099B CN111725099B CN202010542937.7A CN202010542937A CN111725099B CN 111725099 B CN111725099 B CN 111725099B CN 202010542937 A CN202010542937 A CN 202010542937A CN 111725099 B CN111725099 B CN 111725099B
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- process chamber
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- chamber
- gas inlet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses semiconductor process equipment, which comprises a process chamber, wherein the process chamber is provided with an air inlet hole and a process chamber which are communicated with each other; the spacer is arranged in the process chamber, the outer edge of the spacer is in sealing fit with the side wall of the process chamber, the process chamber is divided into a generation chamber and a reaction chamber by the spacer, the air inlet is communicated with the generation chamber, the spacer is provided with a communication hole, the communication hole penetrates through the spacer along the thickness direction, and the generation chamber is communicated with the reaction chamber through the communication hole; the coil is arranged in the process cavity, and the coil is arranged around an air inlet path of the process cavity; the coil driving mechanism is arranged on the process chamber and connected with the coil, and the coil driving mechanism drives the coil to move along the axial direction of the air inlet hole. The above scheme can solve the problems that the current coil position adjustment is difficult and the production rhythm is influenced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to semiconductor process equipment.
Background
Etching is an indispensable process in the processing of semiconductors such as wafers. Currently, wafers are etched with plasmas, which are typically formed by means of rf coils coupled to gases. The semiconductor processing equipment is provided with an air inlet hole and a reaction cavity, an electrostatic chuck is placed in the reaction cavity, a wafer waits for a workpiece to be loaded on the electrostatic chuck, and in order to ensure that gas entering from the air inlet hole can be ionized into plasma in the process of moving the workpiece to be processed, a coil and the workpiece to be processed are generally required to be mutually spaced. When the distance between the coil and the workpiece is smaller, the ionization effect and uniformity of the plasma are relatively higher, the etching effect can be improved, when the distance between the coil and the workpiece is larger, the electromagnetic field distribution condition between the coil and the workpiece is changed, the condition of inclination of the edge of the workpiece can be improved, and the coil is usually positioned at a middle position for balancing the condition. However, under the condition of different process types, the middle positions of the coils are usually different, and at present, the positions of the coils are usually required to be adjusted by stopping the machine, so that the production rhythm is influenced, and the adjustment difficulty is high.
Disclosure of Invention
The invention discloses semiconductor process equipment, which aims to solve the problems that the position of a coil is difficult to adjust and the production rhythm is influenced at present.
In order to solve the problems, the invention adopts the following technical scheme:
a semiconductor processing apparatus, comprising:
the process chamber is provided with an air inlet hole and a process chamber which are communicated with each other;
the spacer is arranged in the process chamber, the outer edge of the spacer is in sealing fit with the side wall of the process chamber, the process chamber is divided into a generation chamber and a reaction chamber by the spacer, the air inlet is communicated with the generation chamber, the spacer is provided with a communication hole, the communication hole penetrates through the spacer along the thickness direction, and the generation chamber is communicated with the reaction chamber through the communication hole;
the coil is arranged in the process cavity, and the coil is arranged around an air inlet path of the process cavity;
the coil driving mechanism is arranged on the process chamber and connected with the coil, and the coil driving mechanism drives the coil to move along the axial direction of the air inlet hole.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the invention discloses semiconductor process equipment, which comprises a process chamber, a spacer, a coil and a coil driving mechanism, wherein the coil driving mechanism is connected with the coil, and can drive the coil to move along the axial direction of an air inlet hole, so that the position of the coil can be directly changed by means of the coil driving mechanism in the production process, the operation is simple, and the production rhythm is basically not influenced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of another embodiment of a semiconductor processing apparatus according to the present invention;
FIG. 3 is a schematic view of a spacer structure in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a spacer in a semiconductor processing tool according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating the cooperation between an air inlet and a coil in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a coil in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of another configuration of a coil in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of another embodiment of a coil in a semiconductor processing apparatus according to the present invention;
FIG. 9 is a schematic diagram showing the distribution of electric and magnetic fields between a solid coil and a planar coil in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 10 is a schematic view of the flow field direction and the electric field direction in a process chamber when a spacer of a semiconductor processing apparatus according to an embodiment of the present invention is in a first position;
fig. 11 is a schematic view of the flow field direction and the electric field direction in the process chamber when the spacer is in the second position in the semiconductor processing apparatus according to the embodiment of the present invention.
Reference numerals illustrate:
100-process chamber, 110-air inlet, 111-outer air inlet, 112-inner air inlet, 120-generation chamber, 130-reaction chamber, 140-top wall, 150-side wall,
200-spacers, 210-communication holes,
300-coil, 310-edge stereo coil, 320-plane coil, 340-stereo coil,
410-a first driving part, 420-a supporting frame, 430-a lifting piece,
510-mounting portion, 520-fine tuning mechanism, 531-connecting rod, 532-guide sleeve, 533-guide mounting member, 534-weight portion,
610-a second driving part, 620-a supporting member, 630-a connecting member,
700-electrostatic chuck.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 11, an embodiment of the present invention discloses a semiconductor process apparatus, which includes a process chamber 100, a spacer 200, a coil 300 and a coil driving mechanism, wherein the process chamber 100 has an air inlet 110 and a process chamber which are mutually communicated, a process gas can be introduced into the process chamber through the air inlet 110 to be ionized to form plasma, and then the semiconductor material such as a wafer in the process chamber is etched through the plasma. The size and shape of the process chamber may be selected according to practical requirements, for example, the process chamber may have a cylindrical structure. Alternatively, the process chamber 100 may include a reaction part and a sub-cylinder connected to the reaction part to enclose a process chamber, the sub-cylinder being disposed above the reaction part, and the semiconductor material may be disposed in the reaction part by means of the electrostatic chuck 700 or the like.
The spacer 200 is disposed within a process chamber, the outer edge of the spacer 200 is in sealing engagement with the sidewall 150 of the process chamber 100, the process chamber is separated by the spacer 200 into a generation chamber 120 and a reaction chamber 130, and a semiconductor workpiece (e.g., a wafer) can be placed within the reaction chamber 130 by means of the electrostatic chuck 700. The gas inlet holes 110 are in communication with the generation chamber 120 so that the process gas entering the process chamber 100 from the gas inlet holes 110 can first form a plasma in the generation chamber 120. Since the outer edge of the spacer 200 is in sealing engagement with the sidewall 150 of the process chamber 100, in order to ensure that the plasma formed in the generation chamber 120 can react with the semiconductor located in the reaction chamber 130, the spacer 200 is provided with a communication hole 210, and the communication hole 210 penetrates through the spacer 200 along the thickness direction of the spacer 200 so as to communicate the generation chamber 120 and the reaction chamber 130 through the communication hole 210, so that the plasma can enter the reaction chamber 130 from the communication hole 210 to react with the wafer. Since the wafer has a circular structure, the communication hole 210 may alternatively be a circular hole, and the size thereof may be flexibly selected according to practical requirements.
The coil 300 is disposed in the process chamber and the coil 300 is disposed around the gas inlet path of the process chamber, that is, the process gas is fed into the process chamber and passes through the position of the coil 300 during the movement of the gas along the gas inlet path, so as to ensure that the process gas can be ionized into plasma by the coil 300. Alternatively, the coil 300 may be wound outside the outer wall of the process chamber 100, or the coil 300 may be disposed between the inner wall and the outer wall of the process chamber 100, i.e., the coil 300 may be buried within the process chamber 100, or the coil 300 may be disposed within the inner wall of the process chamber 100, which may ensure that the process gas is ionized by the coil 300 during the process of entering the process chamber from the gas inlet 110. In addition, the coil 300 may be disposed around the gas inlet 110 so that the process gas may be ionized directly by the coil 300 as the process gas enters the process chamber.
The coil driving mechanism is disposed on the process chamber 100, and is connected with the coil 300, and the coil 300 can move along the axial direction of the air inlet 110 under the driving action of the coil driving mechanism, so as to change the interval between the coil 300 and the workpiece to be processed. With the above structure, the coil 300 can be driven to move by the coil driving mechanism according to different processes, and the position of the coil 300 can be changed to change the density of the plasma ionized by the coil 300; moreover, under the condition of higher uniformity of the plasma, the electric field lines between the edge of the coil 300 and the workpiece to be processed can be prevented from being bent too much, so that the electric field between the edge of the coil 300 and the workpiece to be processed is vertical to the coil 300 as much as possible, and the edge inclination condition of the workpiece to be processed is improved.
Specifically, the coil driving mechanism may be a linear motor, a hydraulic cylinder, an air cylinder, or the like. Alternatively, the coil drive mechanism may be directly connected to the coil 300, or the coil drive mechanism may also be interconnected to the coil 300 by means of an intermediate connection structure.
Further, the semiconductor processing apparatus disclosed in the embodiment of the present invention may further include a mounting portion 510 and a connection portion, the mounting portion 510 is fixed on the process chamber 100, the coil driving mechanism may include a driving seat and a driving head, and by mounting the coil driving mechanism on the mounting portion 510, a relatively fixed relationship between the driving seat of the coil driving mechanism and the process chamber 100 can be formed, so that the coil driving mechanism is prevented from generating a relative motion between the coil driving mechanism and the process chamber 100 during the movement of the driving coil 300, thereby causing component dislocation and even damage to the semiconductor processing apparatus. And the driving head of the coil driving mechanism can be connected with the coil 300 through the connecting part, so that when the driving head and the driving seat relatively move, the driving head can drive the coil 300 to move, and under the limiting effect of the driving seat, the coil 300 can basically move along a straight line. Of course, in the course of mounting the coil driving mechanism, the driving direction of the coil driving mechanism may be made parallel to the moving direction of the coil 300.
Specifically, the mounting portion 510 may be fixedly coupled to the process chamber 100 by a positioning pin, and the mounting portion 510 may have a plate-shaped structure to expand a mounting area of the mounting portion 510. The connection part may be a hard rod-shaped structural member, so that the coil driving mechanism can drive the coil 300 to reciprocate along the axial direction of the air inlet hole 110 by means of the connection part. Alternatively, the coil driving mechanism may be installed inside or outside the space enclosed by the mounting portion 510 and the process chamber 100.
Further, the coil driving mechanism includes a first driving part 410, a supporting frame 420, and a lifting member 430, wherein the supporting frame 420 is mounted on the mounting part 510, and optionally, the supporting frame 420 is mounted on the mounting part 510 through a connection member such as a bolt assembly. Similarly, the first driving part 410 may be provided on the supporting frame 420 by a connection member such as a bolt, or may be provided by welding or the like. The elevating member 430 is connected to the connection part, and the first driving part 410 drives the elevating member 430 to move along the axial direction of the air intake hole 110, thereby driving the coil 300 to move by means of the connection part.
In the case where the lifter 430 is provided, the mounting portion 510 may be disposed between the process chamber 100 and the first driving portion 410, and the lifter 430 may be located at a side of the first driving portion 410 facing away from the process chamber 100. That is, the first driving part 410 is located between the elevation member 430 and the mounting part 510, and the first driving part 410 is located outside the process chamber 100. In this case, since the first driving part 410 and the elevating member 430 are located at the farthest positions of the process chamber 100, when the first driving part 410 is protruded in a direction away from the mounting part 510 to drive the coil 300 to move in a direction approaching the mounting part 510, the protruding motion of the first driving part 410 can be prevented from being disturbed by other structures in the semiconductor process equipment. Specifically, the driving head of the first driving part 410 is connected with the lifting member 430, one end of the connecting part is connected with the lifting member 430, and the other end of the connecting part is connected with the coil 300, so that during the operation of the first driving part 410, the coil 300 can be ensured to move along with the extension and contraction of the driving head by means of the connection effect of the lifting member 430 and the connecting part.
Optionally, the number of the connection parts is multiple, the multiple connection parts are arranged around the air inlet 110 at intervals in the axial direction, and the lifting member 430 and the coil 300 are connected with the multiple connection parts, which can promote the stability of the movement of the coil 300, and basically ensure that the coil 300 can move linearly along the axial direction of the air inlet 110 integrally, so as to prevent the coil 300 from tilting during the movement process, thereby affecting the ionization effect of the coil 300 on the process gas.
Specifically, the structure and the size of the plurality of connecting parts can be the same correspondingly, so that the spare part work and the assembly work are facilitated, and the precision of the coil 300 in the moving process can be improved. Alternatively, three connecting portions may be provided, and the three connecting portions may be distributed in a triangular vertex form, or four connecting portions may be provided, and the four connecting portions may be distributed in a square vertex form.
In addition, in the case where the process chamber 100 encloses the coil 300, i.e., when the coil 300 is installed in the process chamber 100 and the installation part 510 is fixed to the process chamber 100, the coil driving mechanism may be installed directly in the process chamber 100 or may be installed outside the process chamber 100 by means of the elevating member 430. In case that the driving part is located outside the process chamber 100, in order to ensure that the connection part can be connected to the coil 300 located inside the process chamber 100, a through hole may be formed at a position on the mounting part 510 corresponding to the connection part, so that the connection part can be extended into the process chamber 100 to be connected to the coil 300.
Further, the connection part includes a connection rod 531, a guide sleeve 532, a guide mounting member 533, and a weight member 534, the guide sleeve 532 is fixed to the mounting part 510, and the guide sleeve 532 is located at a side of the mounting part 510 away from the process chamber 100, and the guide sleeve 532 is sleeved outside the connection rod 531. As described above, one end of the connection rod 531 is connected to the elevating member 430, and the other end of the connection rod 531 is connected to the coil 300, and the guide sleeve 532 may provide guiding and limiting effects for the connection rod 531 during movement of the connection rod 531 with the elevating member 430 (or the coil driving mechanism), thereby further ensuring that the coil 300 can perform a linear motion in the axial direction of the air intake hole 110. The guide sleeve 532 and the connecting rod 531 can be made of hard materials such as metal, and the guide sleeve 532 and the connecting rod 531 can be mutually limited and matched through corrugated structures, so that the guide performance of the guide sleeve 532 is improved.
The guide mounting member 533 is fixed to the mounting portion 510, and the guide mounting member 533 is disposed at a side of the mounting portion 510 facing the process chamber 100, the guide mounting member 533 is disposed on the connection rod 531, and the guide mounting member 533 is engaged with the connection rod 531 during operation of the connection rod 531, so that the connection rod 531 is further prevented from being inclined.
The weight 534 is disposed on the connection rod 531, and the driving speed of the first driving part 410 can be reduced to some extent by the weight 534, and the variation amplitude of the electromagnetic field in the semiconductor process apparatus is relatively small, so that it is easier to determine the balance position of the coil 300 in the case that the moving speed of the coil 300 is relatively small. Specifically, the weight 534 may be in a ring structure, so that the weight 534 is disposed around the outer circumference of the connecting rod 531, so that the weights at any position in the outer circumference of the connecting rod 531 are similar, and the situation that the connecting rod 531 is easier to deflect during the moving process due to the fact that the weight at a certain position in the outer circumference of the connecting rod 531 is far greater than the weights at other positions is prevented.
Optionally, the semiconductor processing apparatus according to the embodiment of the present invention may further include a fine adjustment mechanism 520, wherein the connection rod 531 may be adjustably connected with the lifting member 430 along the axial direction of the air intake hole 110 through the fine adjustment mechanism 520, so that the horizontal degree of the coil 300 may be adjusted through the fine adjustment mechanism 520 during the process of driving the lifting member 430 by the first driving part 410, and thus, even if the coil 300 is slightly inclined after a plurality of movements, the axial direction of the coil 300 may be restored to a state parallel to the axial direction of the air intake hole 110 by means of the fine adjustment mechanism 520.
Specifically, the fine adjustment mechanism 520 may be a screw adjustment mechanism, and opposite ends of the fine adjustment mechanism 520 may be connected to the connection rod 531 and the lifter 430, respectively, so that the distance between the lifter 430 and the connection rod 531 is adjusted by screwing the fine adjustment mechanism 520. Alternatively, the plurality of connection rods 531 may form an adjustable connection relationship with the lifter 430 through the fine adjustment mechanism 520, so as to further facilitate the adjustment of the coil 300 to a horizontal state, and the adjustment accuracy of the coil 300 may be improved by the plurality of fine adjustment mechanisms 520.
Generally, a discharge port is provided in the process chamber 100 near a semiconductor workpiece (e.g., a wafer) so that fluids such as exhaust gases generated during etching can be pumped out of the reaction chamber 130 through the discharge port. In the etching process, the change of the position of the spacer 200 may affect the communication between the discharge port and the reaction chamber 130, and when the spacer 200 is far from the semiconductor workpiece to be processed mounted on the electrostatic chuck 700, the communication area between the reaction chamber 130 and the discharge port is large, and when the spacer 200 is near to the semiconductor workpiece to be processed, the communication area between the reaction chamber 130 and the discharge port is small. Since the exhaust amount of the exhaust gas is certain, based on the Bernoulli principle, it can be obtained that under the condition that the distance between the spacer 200 and the semiconductor workpiece is far, the flow speed of the exhaust gas is smaller, and the pressure of the gas is larger, and under the condition that the pressure of the gas is larger, the gas is easier to react with the workpiece in the process that the gas flows to the exhaust port, so that the edge tilting effect of the semiconductor workpiece is caused; in contrast, in the case where the distance between the spacer 200 and the semiconductor workpiece is short, the problem of reaction of the exhaust gas to be discharged and the semiconductor workpiece is not likely to occur due to the large flow rate and the small pressure of the gas, and the edge effect of the semiconductor workpiece can be improved. Therefore, based on the aspect of the flow field, it is considered that the smaller the distance between the spacer 200 and the semiconductor work piece is, the less likely the semiconductor work piece is to be subject to edge tilting.
Meanwhile, the plasma formed by coupling the gas through the coil 300 fills the reaction chamber 130, and when the plasma contacts with the chamber wall of the reaction chamber 130, a transition region is formed between the plasma and the chamber wall, and the spacer 200 is used as a structure capable of contacting with the plasma, and the position change of the spacer is likely to influence the shape of the plasma sheath in the reaction chamber 130.
Fig. 10 and 11 are schematic diagrams of the boundary of the plasma sheath in the case that the distance between the spacer 200 and the semiconductor workpiece is different, that is, the schematic diagrams of the flow field direction and the electric field direction in the process chamber 100 when the spacer 200 is at the first position and the second position, respectively. The walls of the reaction chamber 130, the spacers 200, and the semiconductor workpieces may all be boundary structures that are in contact with the plasma. In fig. 10 and 11, P is the boundary of the plasma sheath, E is the electric field direction, and F is the flow field direction.
As shown in fig. 10, in the case where the spacer 200 is closer to the semiconductor workpiece to be processed, the spacer 200 and the semiconductor workpiece to be processed together serve as a boundary structure in contact with plasma, a distance between the spacer 200 and the semiconductor workpiece to be processed is smaller in a direction perpendicular to the axial direction of the gas inlet hole 110 than a chamber wall of the reaction chamber 130, and thus, in the above case, a curvature of a portion of the plasma sheath layer located close to the semiconductor workpiece to be processed is relatively larger; in the case where the spacer 200 is far from the semiconductor workpiece, as shown in fig. 11, the reaction chamber 130 and the semiconductor workpiece together serve as a boundary structure in contact with plasma, and the curvature of the portion of the plasma sheath located near the semiconductor workpiece is relatively small.
Because the electric field direction is perpendicular to the boundary of the plasma sheath layer, under the condition that the curvature of the plasma sheath layer at the part close to the semiconductor workpiece is relatively large, the inclination degree of the electric field direction and the edge part of the semiconductor workpiece is larger, so that the edge inclination effect is increased; on the contrary, in the case where the curvature of the portion of the plasma sheath layer located near the semiconductor workpiece is relatively small, the degree of inclination of the electric field direction and the edge portion of the semiconductor workpiece is small, and the edge inclination effect can be improved. Therefore, based on the level of the electromagnetic field, it can be considered that the larger the distance between the spacer 200 and the semiconductor work piece is, the less likely the semiconductor work piece is to be subject to edge tilting.
To sum up, in order to prevent the edge tilting of the semiconductor workpiece as much as possible, during etching, it is generally necessary to adjust the relative positions between the spacer 200 and the semiconductor workpiece so that the influence of the flow field and the electromagnetic field on the edge tilting effect is in a relatively balanced state.
Based on the above, in order to reduce the difficulty of adjusting the position of the spacer 200, the semiconductor processing apparatus according to the embodiment of the present invention may further include a spacer driving mechanism, and the spacer 200 may be connected to the spacer driving mechanism to drive the spacer 200 to move along the axial direction of the air intake hole 110 by means of the spacer driving mechanism. In the process of moving the spacer 200, the axial dimension of the space clamped by the spacer 200 and the workpiece to be processed in the air inlet 110 can be changed, and then in the etching process, the distance between the spacer 200 and the workpiece to be processed can be flexibly determined according to different etching process types, so that the uniformity of the workpiece to be processed can achieve a better effect.
Accordingly, the spacer driving mechanism may be a cylinder, a hydraulic cylinder, a linear motor, or the like, and the spacer 200 and the spacer driving mechanism may be directly connected or indirectly connected via an intermediate member. In the case where both the spacer 200 and the coil 300 are movable, the moving direction of the spacer 200 can be made the same as the moving direction of the coil 300, that is, both the coil 300 and the spacer 200 are moved in the axial direction of the air intake hole 110, which can reduce the number of factors to be considered when adjusting the relative positions between the coil 300 and the spacer 200 and the workpiece to be machined, thereby reducing the adjustment difficulty and improving the adjustment accuracy.
Further, the spacer driving mechanism includes a second driving part 610, a supporting part 620 and a connecting part 630, the second driving part 610 is disposed on the mounting part 510, and similarly, the second driving part 610 may also include a driving seat and a driving head, and the driving seat of the second driving part 610 may be fixed on the mounting part 510 by a bolt assembly or the like. The driving head of the second driving part 610 is connected with the supporting part 620, and the supporting part 620 is arranged in the process cavity, and the second driving part 610 can even drive the supporting part 620 to move along the axial direction of the air inlet hole 110; and, one end of the connection member 630 is connected to the support member 620, and the other end is connected to the spacer 200, so that the spacer 200 can be driven to move in the axial direction of the intake hole 110 by means of the support member 620 and the connection member 630 during the operation of the second driving part 610. Under the condition of adopting the technical scheme, the mutual interference between the action processes of the spacer driving mechanism and the coil driving mechanism can be prevented, and each component in the semiconductor process equipment can be ensured to work stably and reliably.
Optionally, the coil 300 includes a stereo coil 340 and/or a planar coil 320, the stereo coil 340 extending along an axial direction of the air intake hole 110, the planar coil 320 extending along a direction perpendicular to the axial direction of the air intake hole 110. Further, the coil 300 may include two structural forms of coils, one being a solid coil 340 and one being a planar coil 320. In the process of moving the process gas along the gas inlet path, the stereo coil 340 and the planar coil 320 can generate ionization on the process gas, compared with the planar coil 320, the stereo coil 340 has the advantages of good decoupling effect, large power capacity and the like, compared with the planar coil 320, the planar coil 320 has higher inductive coupling efficiency, can generate larger plasma density and better plasma uniformity, and the shape of the planar coil 320 is easier to control. In the case where the coil 300 includes the stereo coil 340 and the planar coil 320, etching process performance can be improved by optimizing various parameters of plasma. The electromagnetic field distribution of the stereo coil 340 and the planar coil 320 is shown in fig. 9, where P is plasma, a is an induction field of the planar coil, B is an induction field of the planar coil, C is an induction field of the stereo coil, and D is an induction field of the stereo coil.
The three-dimensional coil 340 and the planar coil 320 may be formed by spirally winding a single guide wire, and the multiple turns of the guide wire in the three-dimensional coil 340 are arranged along the axial direction of the air inlet 110, so that the whole three-dimensional coil 340 extends along the axial direction of the communication through hole, and the multiple turns of the guide wire in the planar coil 320 extends along the direction perpendicular to the axial direction of the air inlet 110, so that the whole planar coil 320 can extend along the direction perpendicular to the axial direction of the air inlet 110.
Alternatively, the stereo coil 340 may include a plurality of independent coils arranged along the axial direction of the air intake hole 110, forming a whole of the stereo coil 340; the planar coil 320 may also include a plurality of independent coils arranged in an axial direction perpendicular to the air intake hole 110, forming a whole of the planar coil 320. In the case where the stereo coil 340 and the planar coil 320 each include a plurality of independent coils, each independent coil is separately powered, which can further improve the accuracy of the adjustment of the electromagnetic field by the entire coil 300. In addition, the number of turns (or turns) and winding direction of each of the stereo coil 340 and the planar coil 320 may be determined according to actual requirements, and are not limited herein.
Further, in the case that the coil 300 includes the stereo coil 340 and/or the planar coil 320, the process chamber 100 includes the ceiling wall 140 and the side wall 150, the air intake holes 110 are located in the ceiling wall 140, the stereo coil 340 and/or the planar coil 320 are disposed inside the ceiling wall 140, and an insulating layer is disposed outside the stereo coil 340 and/or the planar coil 320, and the insulating layer can prevent the plasma in the process chamber from reacting with the stereo coil 340 and/or the planar coil 320. Alternatively, the insulating layer may be formed of a material resistant to plasma etching, such as aluminum, resin, quartz, and the like. Meanwhile, the side wall 150 is also provided with an edge stereo coil 310, and parameters such as the number of turns of the edge stereo coil 310 can be determined according to actual requirements. The edge stereo coil 310 is a stereo coil extending along the axial direction of the air inlet hole 110, and by adopting the above technical scheme, the basic structure of the process chamber 100 can be more effectively utilized, and the etching process performance can be further improved.
Further, the gas inlets 110 may include an outer gas inlet 111 and an inner gas inlet 112, where the outer gas inlet 111 and the inner gas inlet 112 may both provide process gas into the process chamber, and the number of the outer gas inlet 111 and the number of the inner gas inlet 112 are at least one, and the outer gas inlet 111 is located between the inner gas inlet 112 and the sidewall 150 of the process chamber 100. In order to further enhance the uniformity of the ionization of the process gas, optionally, the stereo coil 340 and/or the planar coil 320 are located between the inner air inlet 112 and the outer air inlet 111, and the edge stereo coil 310 is located outside the outer air inlet 111, so that in the process of ionizing the process gas, the process gas entering from the outer air inlet 111 is mainly subjected to the ionization reaction under the action of the edge stereo coil 310, and the gas entering from the inner air inlet 112 is mainly subjected to the ionization reaction under the action of the stereo coil 340 and/or the planar coil 320. Of course, the edge stereo coil 310 may ionize the process gas entering from the inner inlet 112 to some extent, and the stereo coil 340 and/or the planar coil 320 may ionize the process gas entering from the outer inlet 111, which may substantially enhance the ionized effect of the entire process gas.
In another embodiment of the present invention, the process chamber 100 includes a top wall 140 and a side wall 150, the gas inlet 110 is located on the top wall 140, a first stereo coil is disposed in the side wall 150, a second stereo coil is disposed on the inner side of the top wall 140, and at least a part of the second stereo coil is located in the first stereo coil, and the first stereo coil and the second stereo coil extend along the communicating axial direction, so that the parts of the first stereo coil and the second stereo coil along the direction perpendicular to the axial direction of the gas inlet 110 produce a similar effect as a planar coil, thereby enabling the process gas entering the process chamber from the gas inlet 110 to be ionized together by the stereo coil and the planar coil, improving the density of the generated plasma, optimizing various parameters of the plasma, and further improving the etching process performance.
Specifically, the number of turns and other parameters of the first stereo coil and the second stereo coil may be correspondingly the same. In the case that the dimensions of the first stereo coil and the second stereo coil along the axial direction of the air inlet 110 are equal, the first stereo coil and the second stereo coil can be overlapped along the axial direction of the air inlet 110, so that the effect similar to a planar coil generated when the first stereo coil and the second stereo coil interact is further improved, and further the etching process performance is improved.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present invention and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are to be included in the scope of the claims of the present invention.
Claims (9)
1. A semiconductor processing apparatus, comprising:
a process chamber (100), the process chamber (100) having an inlet aperture (110) and a process chamber in communication with each other;
the spacer (200), the spacer (200) is arranged in the process chamber, the outer edge of the spacer (200) is in sealing fit with the side wall (150) of the process chamber (100), the process chamber is divided into a generating chamber (120) and a reaction chamber (130) by the spacer (200), the air inlet hole (110) is communicated with the generating chamber (120), the spacer (200) is provided with a communication hole (210), the communication hole (210) penetrates through the spacer (200) along the thickness direction, and the generating chamber (120) and the reaction chamber (130) are communicated through the communication hole (210);
the spacer driving mechanism is connected with the spacer (200) and drives the spacer (200) to move along the axial direction of the air inlet hole (110);
a coil (300), the coil (300) being disposed within the process chamber, and the coil (300) being disposed around an air intake path of the process chamber;
the coil driving mechanism is arranged on the process chamber (100), is connected with the coil (300), and drives the coil (300) to move along the axial direction of the air inlet hole (110).
2. The semiconductor processing apparatus of claim 1, further comprising a mounting portion (510) and a connection portion, the mounting portion (510) being secured to the process chamber (100), the coil drive mechanism being mounted to the mounting portion (510), the coil drive mechanism being connected to the coil (300) by the connection portion.
3. The semiconductor processing apparatus of claim 2, wherein the coil drive mechanism comprises a first drive portion (410), a support frame (420), and a lift (430), wherein,
the supporting frame (420) is mounted on the mounting part (510);
the first driving part (410) is arranged on the supporting frame (420), the first driving part (410) is connected with the lifting piece (430), the lifting piece (430) is connected with the connecting part, and the first driving part (410) drives the lifting piece (430) to move along the axial direction of the air inlet hole (110).
4. The semiconductor processing apparatus of claim 3, wherein the connection comprises a connection rod (531), a guide sleeve (532), a guide mount (533), and a counterweight (534), wherein,
the guide sleeve (532) is fixed on the mounting part (510) and is positioned on one side of the mounting part (510) far away from the process chamber (100), and the guide sleeve (532) is sleeved outside the connecting rod (531);
the guide mounting piece (533) is fixed to the mounting part (510) and is positioned on one side of the mounting part (510) facing the process chamber (100), and the guide mounting piece (533) is arranged on the connecting rod (531);
one end of the connecting rod (531) is connected with the lifting piece (430), and the other end of the connecting rod (531) is connected with the coil (300);
the weight (534) is disposed on the connecting rod (531).
5. The semiconductor processing apparatus of claim 4, wherein the connecting rod (531) is adjustably connected to the lift (430) by a fine adjustment mechanism (520).
6. The semiconductor processing apparatus of any one of claims 2 to 5, wherein the spacer driving mechanism comprises a second driving part (610), a supporting part (620) and a connecting part (630), the second driving part (610) is disposed on the mounting part (510), the second driving part (610) is connected with the supporting part (620), the supporting part (620) is disposed in the process chamber, the second driving part (610) drives the supporting part (620) to move along the axial direction of the air inlet hole (110), one end of the connecting part (630) is connected with the supporting part (620), and the other end is connected with the spacer (200).
7. The semiconductor process apparatus according to claim 1, wherein the coil (300) comprises a solid coil (340) and/or a planar coil (320), the solid coil (340) extending in an axial direction of the gas inlet aperture (110), the planar coil (320) extending in a direction perpendicular to the axial direction of the gas inlet aperture (110).
8. The semiconductor processing apparatus of claim 7, wherein the process chamber (100) comprises a top wall (140) and the side wall (150), the gas inlet (110) is located in the top wall (140), the stereo coil (340) and/or the planar coil (320) are disposed inside the top wall (140), and an isolation layer is disposed outside the stereo coil (340) and/or the planar coil (320), and an edge stereo coil (310) is disposed inside the side wall (150).
9. The semiconductor processing apparatus according to claim 8, wherein the gas inlet (110) comprises an outer gas inlet (111) and an inner gas inlet (112), the number of the outer gas inlet (111) and the number of the inner gas inlet (112) being at least one, the outer gas inlet (111) being located between the inner gas inlet (112) and a side wall (150) of the process chamber (100), the stereo coil (340) and/or the planar coil (320) being located between the inner gas inlet (112) and the outer gas inlet (111), the edge stereo coil (310) being located outside the outer gas inlet (111).
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