CN103367198A - An etching apparatus and an etching method - Google Patents
An etching apparatus and an etching method Download PDFInfo
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- CN103367198A CN103367198A CN201210089507XA CN201210089507A CN103367198A CN 103367198 A CN103367198 A CN 103367198A CN 201210089507X A CN201210089507X A CN 201210089507XA CN 201210089507 A CN201210089507 A CN 201210089507A CN 103367198 A CN103367198 A CN 103367198A
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- 238000005530 etching Methods 0.000 title claims abstract description 169
- 238000000034 method Methods 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 97
- 239000010703 silicon Substances 0.000 claims abstract description 97
- 230000004888 barrier function Effects 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
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- Weting (AREA)
Abstract
The invention discloses an etching apparatus capable of adjusting the distance between a silicon slice and a jet head according to different technological requirements in order to increase the uniformity and the etching rate of silicon slice etching. The etching apparatus comprises an etching chamber, a jet head, a tray device, a plurality of guide pillars, and a driving device. The etching chamber comprises an air inlet and a plurality of air exhausts. The jet head is disposed in the etching chamber and is arranged right under the air inlet. The tray device comprises a tray body used for bearing the silicon slice. The tray body is disposed in the etching chamber and is arranged under the jet head. Multiple guide holes are disposed on the tray body. The plurality of guide pillars are respectively contained in a corresponding guide hole of the tray body and support the silicon slice. The driving device drives the tray body to move up and down in the etching chamber in order to adjust the distance between the tray body and the jet head. The invention also discloses a method for etching a silicon slice by using the etching apparatus.
Description
Technical field
The present invention relates to a kind of etching device for semiconductor silicon dies etching, relate in particular to and a kind ofly can adjust distance between silicon chip and the jet thrust to improve the etching device of silicon chip erosion uniformity and etch rate according to the different process requirement, also relate to simultaneously a kind of method of using this etching device etching silicon wafer.
Background technology
Now, the gas etching barrier layer is unstressed barrier layer removal technology in a kind of novel semiconductor copper interconnection process.The speed of barrier etch in the technique is removed on the barrier layer of copper-connection and the uniformity of etching is two very important technical indicators.
During etching, the silicon chip that usually need is etched is positioned on the silicon chip chuck, and described silicon chip chuck is fixedly arranged in the etching chamber.Etching gas is injected on the described silicon chip by a jet thrust that is arranged in the etching cavity, is satisfying under the process conditions of gas etching, removes the barrier layer that need be etched thereby the barrier layer on etching gas and the described silicon chip reacts.Because the silicon chip chuck is installed in the etching cavity, just mean that also the silicon chip that is placed on it and the distance between the described jet thrust fix.And the far and near meeting of the distance between silicon chip and the jet thrust affect the speed of silicon chip erosion, even the etching homogeneity of part is also had certain impact.If the distance between silicon chip and the jet thrust is less than normal, such as less than 4M M the time, the etching gas that ejects from jet thrust is not having in the situation of full and uniform diffusion namely and the barrier layer haptoreaction on the silicon chip, can cause on the silicon chip with the fumarole of jet thrust over against the reaction rate at position faster than the reaction rate that is adjacent the position.If the distance between silicon chip and the jet thrust is remote, because in etching process, the accessory substance that the etching gas that does not react with the barrier layer and etching gas and barrier reaction generate can constantly be discharged from the exhaust outlet of etching cavity, in such cases, if distant between silicon chip and the jet thrust, etching gas also be not able to do in time with silicon chip on barrier reaction namely can be discharged from, cause the reaction time of etching gas and silicon chip and the amount of effective etching gas all can diminish, thereby reduce the etch rate of silicon chip, and then cause the increase of cost.Hence one can see that, distance on the silicon chip chuck between silicon chip and the jet thrust is parameter very crucial in the etching technics, and according to different barrier layer materials and chemical substance because intrinsic reaction rate different, in etching technics, distance between silicon chip and the jet thrust also can be not quite similar, so the distance of adjusting between silicon chip and the jet thrust according to different process requirements is necessary.And common etching device can not satisfy the adjustable demand of distance between silicon chip and the jet thrust.
Summary of the invention
One of purpose of the present invention is to provide a kind of for the defective that the above-mentioned background technology exists can require to adjust distance between silicon chip and the jet thrust according to different process, improves the etching device of silicon chip erosion uniformity and etch rate.
For achieving the above object, etching device of the present invention comprises etching cavity, jet thrust, pallet apparatus, a plurality of guide pillar and drive unit.Described etching cavity has air inlet and a plurality of exhaust outlet.Described jet thrust is arranged in the described etching cavity and is positioned at described air inlet below.Described pallet apparatus has a tray body and is used for carrying described silicon chip, and described tray body is positioned at described etching cavity and is positioned at described jet thrust below, has a plurality of guide holes on the described tray body.Described a plurality of guide pillar is contained in respectively in the corresponding guide hole of described tray body, and guide pillar holds up described silicon chip.Described drive unit drives described tray body and move up and down to adjust distance between described tray body and the described jet thrust in described etching cavity.
Another purpose of the present invention provides a kind of method of using above-mentioned etching device etching silicon wafer, may further comprise the steps:
The driving tray body moves downward, and the upper end of guide pillar protrudes out described tray body, and described silicon chip is placed on the upper end of described guide pillar, holds described silicon chip by described guide pillar;
Drive described tray body and move upward, described silicon chip drops on the described tray body, and described tray body continues to move upward to the technique position of setting;
Spray uniformly etching gas to silicon chip, the barrier layer that need be etched on the etching silicon wafer;
Discharge the product that residual etching gas and etching gas and barrier reaction generate;
The driving tray body moves downward, and the upper end of guide pillar holds up the silicon chip that has been etched;
Take the silicon chip that has been etched away from guide pillar.
In sum, etching device of the present invention and lithographic method drive tray body by drive unit and move up and down, and then the distance between adjusting tray body and the jet thrust is to the technique position of setting, therefore, according to different process requirements, the etch rate of silicon chip can well be adjusted, and simultaneously, the uniformity of silicon chip erosion also is significantly improved.The setting of guide pillar not only can guide tray body to move up and down, and all holds up silicon chip before and after etching, makes things convenient for picking and placeing of silicon chip, has improved the speed of PROCESS FOR TREATMENT.
Description of drawings
Fig. 1 is the elevation cross-sectional view of the first embodiment of etching device of the present invention.
Fig. 2 is the partial enlarged drawing at A position among Fig. 1.
Fig. 3 is the vertical view of the first embodiment of the sacrifice ring of etching device of the present invention.
Fig. 4 is that Fig. 3 is along the cutaway view of IV-IV line.
Fig. 5 is the vertical view of the second embodiment of the sacrifice ring of etching device of the present invention.
Fig. 6 is that Fig. 5 is along the cutaway view of VI-VI line.
Fig. 7 is the elevation cross-sectional view of the second embodiment of etching device of the present invention.
Embodiment
By describing technology contents of the present invention, structural feature in detail, being reached purpose and effect, below in conjunction with embodiment and cooperate graphic detailed description the in detail.
See also Fig. 1, Fig. 1 is the elevation cross-sectional view of the first embodiment of etching device 100 of the present invention.Etching device 100 of the present invention comprises etching cavity 10, pallet apparatus 30 and drive unit 60.
The material of pallet apparatus 30 is aluminium, and its surface is through oxidation processes or use coating protection, and coating can be Teflon, reacts to prevent pallet apparatus 30 and etching gas.Pallet apparatus 30 has a discoid tray body 31 and is used for the silicon chip W that carrying need be etched, tray body 31 be positioned at etching cavity 10 and be positioned at jet thrust 20 under.The top of tray body 31 has accepting groove 32, and a plurality of guide holes 33 run through tray body 31 and communicate with corresponding accepting groove 32, and preferred, guide hole 33 has three.The middle part of the bottom of tray body 31 extends to form a support arm 34 downwards and is used for support tray body 31.The bottom of support arm 34 passes and affixed with a basetray 35 from the perforation of etching cavity 10.Some telescopic elastic components 40 are arranged between etching cavity 10 bottom and basetray 35 outward.
A plurality of guide pillars 50 are contained in respectively in the tray body 31 corresponding guide holes 33, and the top of guide pillar 50 has protuberance 51, and described protuberance 51 places the accepting groove 32 of tray body 31, and stretch out from guide hole 33 bottom of guide pillar 50, and preferred, guide pillar 50 has three.
See also Fig. 1 and Fig. 2 to Fig. 4.One sacrifices ring 70 is placed on the tray body 31 of pallet apparatus 30 and around silicon chip W.Sacrifice and to have installing hole 71 on the ring 70 and be fixed on the tray body 31 or from tray body 31 and dismantle in order to will sacrifice ring 70.The medial surface of sacrificing ring 70 is an inclined-plane that tilts, and W is positioned on the tray body 31 accurately with the guiding silicon chip.Sacrifice among the first embodiment of ring 70 in the present invention, sacrificing ring 70 is single layer structure, and its etch rate is identical or close with the etch rate on the upper barrier layer of silicon chip W, usually, the etch rate of sacrificing ring 70 is 0.8 times to 1.2 times of etch rate on barrier layer, preferably 0.9 times to 1.1 times, thereby sacrifice ring 70 and etching gas reaction, solve the edge effect in the silicon chip W etching process, improved the uniformity of silicon chip W surface barrier etching.
See also Fig. 5 to Fig. 6, sacrifice the second embodiment schematic diagram of ring 70 for the present invention.In the present embodiment, sacrificing ring 70 is double-decker, comprises bottom 72 and top layer 73.The bottom 72 of sacrifice ring 70 is made of one of aluminium, stainless steel, copper or above three's alloy.The etch rate of sacrificing the barrier layer on etch rate and the silicon chip W on top layer 73 of ring 70 is identical or close, usually, the etch rate of sacrificing the top layer 73 of ring 70 is 0.8 times to 1.2 times of etch rate on barrier layer, preferably 0.9 times to 1.1 times, the top layer 73 of sacrificing ring 70 can be by the preparation of the methods such as sputter on the bottom 72 of sacrificing ring 70.After the top layer 73 of sacrifice ring 70 is consumed, can again prepare top layers 73 at the bottom 72 of sacrificing ring 70 in etching process, thereby the saving cost.
Please again consult Fig. 1, be embedded with respectively a plurality of heating members 80 and a temperature sensor 90 on the tray body 31 of the top of etching cavity 10 and both sides and pallet apparatus 30.The heating member 80 at etching cavity 10 tops is used for heating jet thrust 20, and the heating member 80 of etching cavity 10 both sides is used for heating etching cavity 10, and the heating member 80 of tray body 31 is used for the silicon chip W that heating is placed on it.The top of etching cavity 10, the both sides of etching cavity 10 and the temperature control of tray body 31 are independent of one another and are monitored by the temperature sensor 90 that arranges on it respectively.According to different process requirements, by independent control three's temperature, can make the temperature uniformity in the etching cavity 10 or have different temperature gradients, thereby improve the speed of technique etching and the effect of technique etching.
See also Fig. 7, Fig. 7 is the elevation cross-sectional view of the second embodiment of etching device 100 of the present invention.Compare with the first embodiment, the difference of present embodiment is that the bottom of guide pillar 50 is fixed on the bottom in the etching cavity 10, and the upper end of guide pillar 50 is contained in the guide hole 33 of tray body 31.During etching, adjust temperature in the etching cavity 10 to the temperature of process requirements, temperature that also can be in silicon chip W enters etching cavity 10 rear adjustment etching cavities 10 is to the temperature of process requirements.Tray body 31 moves downward along guide pillar 50 under the driving of motor 61, and the upper end of guide pillar 50 protrudes from tray body 31, opens the chamber door 12 of etching cavity 10, and manipulator is put into silicon chip W the top of guide pillar 50 via chamber door 12.Then motor 61 driving tray bodies 31 move upward along guide pillar 50, silicon chip W falls on the tray body 31 along the inclined-plane of sacrificing ring 70, tray body 31 is with silicon chip W picking-up and continue to move upward to the technique position that sets, etching gas enters etching cavity 10 and is injected in uniformly the upper and barrier layer generation chemical reaction of silicon chip W by jet thrust 20 from the air inlet 11 of etching cavity 10, after reaction finished, the product that residual etching gas and etching gas and barrier reaction generate was discharged via exhaust outlet 13.After etching technics finished, motor 61 driving tray bodies 31 moved downward along guide pillar 50, and the top of guide pillar 50 holds up the silicon chip W that has been etched, and silicon chip W takes out etching cavity 10 from chamber door 12.
The present invention further provides a kind of method of using this etching device 100 etching silicon wafer W, comprise the steps:
S1: the temperature in the etching cavity 10 are adjusted to the temperature of process requirements, and this step also can be finished after silicon chip W enters etching cavity 10.
S2: motor 61 driving tray bodies 31 move downward, and silicon chip W is placed on the guide pillar 50 through chamber door 12.
S3: motor 61 driving tray bodies 31 move upward, and silicon chip W falls on the tray body 31 along the inclined-plane of sacrificing ring 70, and tray body 31 continues to move upward to the technique position of setting.
S4: jet thrust 20 sprays etching gas uniformly to silicon chip W, and the barrier layer on the silicon chip W is etched.
S5: discharge the product that residual etching gas and etching gas and barrier reaction generate from exhaust outlet 13.
S6: motor 61 driving tray bodies 31 move downward, and the silicon chip W that is etched is held up by guide pillar 50.
S7: take out the silicon chip W that is etched from guide pillar 50.
From the above, etching device 100 of the present invention drives tray body 31 by drive unit 60 and moves up and down, and then the distance between adjusting tray body 31 and the jet thrust 20 is to the technique position of setting, therefore, according to different process requirements, the etch rate of silicon chip W can well be adjusted, and simultaneously, the uniformity of silicon chip W etching also is significantly improved.The setting of guide pillar 50 not only can guide tray body 31 to move up and down, and all holds up silicon chip W before and after etching, makes things convenient for picking and placeing of silicon chip W, has improved the speed of PROCESS FOR TREATMENT.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (19)
1. an etching device is used for etching silicon wafer, comprising:
Etching cavity has air inlet and a plurality of exhaust outlet;
Jet thrust is arranged in the described etching cavity and is positioned at described air inlet below;
Pallet apparatus has a tray body and is used for carrying described silicon chip, and described tray body is positioned at described etching cavity and is positioned at described jet thrust below, has a plurality of guide holes on the described tray body;
A plurality of guide pillars are contained in respectively in the corresponding guide hole of described tray body, and guide pillar holds up described silicon chip;
Drive unit drives described tray body and move up and down to adjust distance between described tray body and the described jet thrust in described etching cavity.
2. etching device according to claim 1 is characterized in that: the bottom in the described etching cavity has a plurality of detents, and the lower end of described guide pillar is positioned at described detent.
3. etching device according to claim 1, it is characterized in that: the top of described tray body has a plurality of accepting grooves, and the described guide hole respectively accepting groove corresponding with it communicates, and the top of described guide pillar has protuberance, and described protuberance places in the described accepting groove.
4. etching device according to claim 1 is characterized in that: the lower end of described guide pillar is fixed on the bottom in the described etching cavity.
5. etching device according to claim 1 is characterized in that: described etching device comprises that also one sacrifices ring, and described sacrifice ring is placed on the described tray body and around described silicon chip.
6. etching device according to claim 5, it is characterized in that: described sacrifice ring is single layer structure, the etch rate on the barrier layer on the etch rate of described sacrifice ring and the described silicon chip is identical or close.
7. etching device according to claim 6 is characterized in that: the etch rate of described sacrifice ring is 0.8 times to 1.2 times of etch rate on described barrier layer, preferably 0.9 times to 1.1 times.
8. etching device according to claim 5, it is characterized in that: described sacrifice ring is double-decker, the bottom of described sacrifice ring is made of one of aluminium, stainless steel, copper or above three's alloy, and the etch rate on the barrier layer on the etch rate on the top layer of described sacrifice ring and the described silicon chip is identical or close.
9. etching device according to claim 8 is characterized in that: the etch rate on described sacrifice ring top layer is 0.8 times to 1.2 times of etch rate on described barrier layer, preferably 0.9 times to 1.1 times.
10. etching device according to claim 5 is characterized in that: the medial surface of described sacrifice ring is an inclined-plane that tilts.
11. etching device according to claim 5 is characterized in that: have installing hole on the described sacrifice ring.
12. etching device according to claim 1 is characterized in that: described a plurality of exhaust outlets evenly are arranged on the bottom of described etching cavity.
13. etching device according to claim 1 is characterized in that: be embedded with respectively heating member and temperature sensor on the tray body of the top of described etching cavity and both sides and described pallet apparatus.
14. etching device according to claim 13 is characterized in that: be independent of one another and respectively by the temperature sensor monitors that arranges on it to the temperature control of the both sides of the top of described etching cavity, etching cavity and tray body.
15. etching device according to claim 1 is characterized in that: described pallet apparatus also comprises the support arm that passes described etching cavity, and the two ends that described support arm is relative connect respectively described tray body and a basetray.
16. etching device according to claim 15 is characterized in that: described drive unit comprises a motor and a screw mandrel, and described screw mandrel links to each other with described motor and passes the basetray of described pallet apparatus and be fixed on the bottom of described etching cavity.
17. etching device according to claim 15 is characterized in that: described etching device also comprises some telescopic elastic components, and described elastic component is arranged between the bottom and basetray of etching cavity.
18. a right to use requires the method for 1 described etching device etching silicon wafer, may further comprise the steps:
The driving tray body moves downward, and the upper end of guide pillar protrudes out described tray body, and described silicon chip is placed on the upper end of described guide pillar, holds described silicon chip by described guide pillar;
Drive described tray body and move upward, described silicon chip drops on the described tray body, and described tray body continues to move upward to the technique position of setting;
Spray uniformly etching gas to silicon chip, the barrier layer that need be etched on the etching silicon wafer;
Discharge the product that residual etching gas and etching gas and barrier reaction generate;
The driving tray body moves downward, and the upper end of guide pillar holds up the silicon chip that has been etched;
Take the silicon chip that has been etched away from guide pillar.
19. lithographic method according to claim 18 is characterized in that: further be included in described silicon chip and enter described etching cavity before or afterwards, the temperature in the described etching cavity is adjusted to the temperature of process requirements.
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| CN201210089507.XA CN103367198B (en) | 2012-03-30 | 2012-03-30 | Etching device and lithographic method |
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| CN201210089507.XA CN103367198B (en) | 2012-03-30 | 2012-03-30 | Etching device and lithographic method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104609365A (en) * | 2015-02-14 | 2015-05-13 | 苏州工业园区纳米产业技术研究院有限公司 | Deep silicon etching machine table and wafer protection device thereof |
| CN107245755A (en) * | 2017-04-21 | 2017-10-13 | 深圳大学 | The light assisted electrochemical etching device synchronously tested suitable for Multi-example |
| CN110092344A (en) * | 2019-05-16 | 2019-08-06 | 烟台睿创微纳技术股份有限公司 | A kind of method of MEMS release frame, release board and MEMS component release |
| CN111725099A (en) * | 2020-06-15 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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| CN101740335A (en) * | 2008-11-14 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | manufacturing equipment and method for etching semiconductor structure |
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| US6033925A (en) * | 1996-05-27 | 2000-03-07 | Korea Advanced Institute Of Science And Technology | Method for manufacturing a SOI-type semiconductor structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104609365A (en) * | 2015-02-14 | 2015-05-13 | 苏州工业园区纳米产业技术研究院有限公司 | Deep silicon etching machine table and wafer protection device thereof |
| CN107245755A (en) * | 2017-04-21 | 2017-10-13 | 深圳大学 | The light assisted electrochemical etching device synchronously tested suitable for Multi-example |
| CN110092344A (en) * | 2019-05-16 | 2019-08-06 | 烟台睿创微纳技术股份有限公司 | A kind of method of MEMS release frame, release board and MEMS component release |
| CN111725099A (en) * | 2020-06-15 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN111725099B (en) * | 2020-06-15 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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| CN103367198B (en) | 2017-12-08 |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai City, Pudong New Area China Zhangjiang High Tech Park of Shanghai Cailun Road No. 1690 building 4 Patentee before: ACM (SHANGHAI) Inc. |