CN108281372B - Integrated circuit chip wet processing device and method for uniformly etching substrate - Google Patents
Integrated circuit chip wet processing device and method for uniformly etching substrate Download PDFInfo
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- CN108281372B CN108281372B CN201810288503.1A CN201810288503A CN108281372B CN 108281372 B CN108281372 B CN 108281372B CN 201810288503 A CN201810288503 A CN 201810288503A CN 108281372 B CN108281372 B CN 108281372B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an integrated circuit chip wet processing device and method for uniformly etching a substrate.A supporting body is mounted on a vibration device through a cylinder connecting structure; the cylinder connecting structure comprises a first cylinder arranged at the lower end of the vibrating device and a second cylinder arranged at the upper end of the supporting body, and the second cylinder is rotatably connected to the first cylinder and can move up and down relative to the first cylinder; the rotary transmission mechanism is connected with the supporting body so as to drive the supporting body to rotate relative to the vibrating device through the cylindrical connecting structure; the shaking mechanism is connected with the supporting body to drive the supporting body to shake up and down relative to the vibrating device through the cylinder connecting structure, and the range of up and down shaking of the supporting body is smaller than or equal to the range of up and down movement of the second cylinder relative to the first cylinder. The integrated circuit chip wet processing device and the method for uniformly etching the substrate can improve the uniformity of the substrate etching.
Description
Technical Field
The invention relates to the technical field of integrated circuit chip wet treatment, in particular to an integrated circuit chip wet treatment device and method for uniformly etching a substrate.
Background
The integrated circuit industry is the basis of information network technology and microelectronic technology which have been developed in the past and around the beginning of the 20 th century, and is the core technology affecting our daily life and various industries, and is closely related to our daily life. From the mobile phone computer network which is not used for life of people at present to the research and development of various vehicles, almost every industry is not used for developing the semiconductor industry of the integrated circuit, and the integrated circuit has penetrated into the aspects of life and plays an increasingly important role along with the development of the technology of the social industry.
The integrated circuit chip design and manufacturing industry is the core and main body of the integrated circuit industry, which is the foundation for accelerating the development and creation of the semiconductor integrated circuit industry. The processing procedures of wet etching, cleaning and the like of the integrated circuit substrate penetrate through the whole chip manufacturing process and occupy more than 25% of production links. The etching and cleaning of the substrate are required by a plurality of chemical liquids used in the substrate wet treatment process, and the line width of the chemical liquids enters smaller and smaller nanoscale structures along with the continuous improvement of the integrated circuit integration level, so that the etching uniformity of the nanoscale structures on the surface of the substrate becomes an increasingly important link in the wet cleaning treatment.
The non-uniformity of the substrate etching can cause a plurality of problems of the integrated circuit chip, such as the fact that a key bridge-shaped physical sensing structure cannot be effectively constructed in a sensor chip mechanism, thereby influencing the functions and the service life of the device; in an integrated circuit with higher and higher integration level, the evenness of etching can cause poor evenness in a PN junction of the integrated circuit, and the integral parameters of the integrated circuit are affected; and the problems of high defective products and waste chips and the like are generated.
Disclosure of Invention
The invention aims to provide an integrated circuit chip wet processing device and method for uniformly etching a substrate, which can improve the uniformity of etching the substrate.
In order to solve the above problems, the present invention provides an integrated circuit chip wet processing apparatus for uniformly etching a substrate, comprising: the vibration device, the supporting body, the rotation transmission mechanism, the shaking mechanism and the cylinder connecting structure;
the bearing body is mounted on the vibration device through the cylinder connecting structure; the cylinder connecting structure comprises a first cylinder arranged at the lower end of the vibrating device and a second cylinder arranged at the upper end of the supporting body, wherein the second cylinder is rotatably connected to the first cylinder and can move up and down relative to the first cylinder;
the rotary transmission mechanism is connected with the supporting body so as to drive the supporting body to rotate relative to the vibration device through the cylindrical connecting structure; the shaking mechanism is connected with the supporting body so as to drive the supporting body to shake up and down relative to the vibration device through the cylinder connecting structure, and the range of up and down shaking of the supporting body is smaller than or equal to the range of up and down movement of the second cylinder relative to the first cylinder.
According to one embodiment of the invention, the first cylinder is an outer cylinder with a hollow space, and the second cylinder is an inner cylinder with an outer diameter matching an inner diameter of the first cylinder;
the first cylinder is provided with an upper blocking part and a lower blocking part; the second cylinder is arranged in the hollow space of the first cylinder, can relatively move up and down, and limits the up-down movement range by the upper blocking part and the lower blocking part; the carrier passes through the lower baffle part and is connected with the second cylinder.
According to one embodiment of the invention, the rotation transmission mechanism and the bearing body are both connected to the dithering mechanism, and are dithered together under the action of the dithering mechanism.
According to one embodiment of the invention, the dithering mechanism includes: cam mechanism, supporting bench, guide structure and servo motor;
the rotation transmission mechanism and the bearing body are connected to the supporting table; the cam mechanism is connected with the supporting table; the servo motor controls the cam mechanism to move, so that the cam mechanism drives the supporting table to shake up and down.
According to one embodiment of the invention, the guiding structure is at least three guiding columns penetrating through the supporting table.
According to one embodiment of the invention, the rotation transmission mechanism is connected to the supporting table through a lifting seat, and the lifting seat is at a height such that the position where the rotation transmission mechanism is rotationally connected with the supporting body is located within a certain distance range below the cylinder connecting structure.
According to one embodiment of the invention, the dithering mechanism dithers under control of a fade-in pulse generated by a servo motor controlling the cam mechanism.
According to one embodiment of the invention, the device further comprises a lifting mechanism,
the vibration device, the rotation transmission mechanism and the shaking mechanism are all connected to the lifting mechanism, and lift occurs together under the control of the lifting mechanism.
According to one embodiment of the invention, the lower end of the supporting body is provided with a plurality of hooks for respectively mounting a substrate box capable of accommodating a plurality of substrates.
According to one embodiment of the invention, at least the vibration of the carrier by the vibration device and the vibration of the carrier by the vibration mechanism are performed in a time-sharing manner.
The invention relates to an integrated circuit chip wet processing method for uniformly etching a substrate, which adopts the integrated circuit chip wet processing device for uniformly etching the substrate, according to any one of the previous embodiments, and comprises the following steps:
obtaining a substrate box containing a plurality of substrates through the supporting body, and placing the substrate box into a corresponding etching process groove;
controlling the vibration device to work, wherein the vibration device transmits vibration energy to the supporting body through the cylinder connecting structure so as to be transmitted to the substrate;
the shaking mechanism is controlled to work, and the shaking mechanism drives the supporting body to vibrate up and down relatively through the cylinder connecting structure, so that the substrate is driven to shake up and down;
the rotary transmission mechanism is controlled to work, and the rotary transmission mechanism drives the supporting body to rotate relatively through the cylinder connecting structure, so that the substrate is driven to rotate, and the position of the substrate box in the etching process groove is changed;
the vibration device, the vibration mechanism and the rotation transmission mechanism are controlled to intermittently work, and at least the vibration of the vibration device to the carrier and the vibration of the vibration mechanism to the carrier are simultaneously carried out.
After the technical scheme is adopted, compared with the prior art, the invention has the following beneficial effects:
the vibration device is connected with the supporting body through a cylinder connecting structure, so that a vibration, vibration and rotating wet treatment mode on the same structure can be completed, the rotation and vibration mechanism of the supporting body cannot be influenced, vibration energy is transmitted to the substrate, and tiny bubbles generated on the surface of the substrate due to chemical reaction or ultrasonic megasonic cavitation or high gas content in liquid are prevented and removed; the shaking mechanism can drive the supporting body to shake up and down, so that the relative fluid velocity change rate of the chemical liquid on the surface of the substrate is increased, tiny bubbles generated on the surface of the substrate due to chemical reaction or ultrasonic megasonic cavitation are removed, and the uniform chemical etching reaction of the surface of the substrate is accelerated; the vibration device and the vibration mechanism can enable the carrier body to vibrate and vibrate simultaneously, so that the bubble removing effect is enhanced, and the etching is more uniform; the rotation transmission mechanism drives the supporting body to rotate and the vibration device is not moved, so that the carrying basket carrying a plurality of substrate boxes can rotate in the chemical tank body, the position of the carrying basket placed in the chemical process tank is changed, the influence of objective concentration differences on the etching rate of substrates at different positions is balanced because of the unavoidable areas of chemical liquid in the tank body, and meanwhile, the stability of vibration is ensured.
Drawings
FIG. 1 is a schematic diagram of an integrated circuit chip wet processing apparatus for uniformly etching a substrate according to an embodiment of the present invention;
FIG. 2 is a schematic view of a cross-sectional structure in the B-B direction of the integrated circuit chip wet processing apparatus of the uniformly etched substrate of FIG. 1;
FIG. 3 is a flow chart of a method for wet processing integrated circuit chips for uniformly etching a substrate according to an embodiment of the invention.
The figure indicates:
1-vibrating device, 2-cylinder connection structure, 21-first cylinder, 22-second cylinder, 3-supporting body, 31-rotation connecting portion, 32-shake connecting portion, 33-couple, 4-rotation transmission mechanism, 51-cam mechanism, 52-supporting bench, 53-guide structure, 6-elevating system, 7-link, 8-lifting seat.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than those herein described, and those skilled in the art will readily appreciate that the present invention may be similarly embodied without departing from the spirit or essential characteristics thereof, and therefore the present invention is not limited to the specific embodiments disclosed below.
The wet treatment etching cleaning process of the substrate mainly comprises the following steps: placing the substrate box into a chemical liquid tank body for direct etching and cleaning; secondly, a slow and uniform mechanical arm is adopted to shake up and down, so that the etching reaction of the chemical liquid and the substrate is accelerated; thirdly, the rotation of a rotary rod at the bottom of the tank body is adopted to drive the substrate in the wafer box to rotate in the chemical liquid, so that the influence of inconsistent chemical liquid concentration at the upper and lower parts in the tank body on the etching uniformity of the substrate is balanced; fourthly, adopting a liquid circulation overflow and nitrogen bubbling method to increase the concentration uniformity of the chemical liquid at each part of the tank body; and fifthly, transmitting ultrasonic wave or megasonic energy to the surface of the substrate, and stripping tiny particles on the surface of the substrate by using the bubble cavitation and blasting principles.
The first method can be used in a wet treatment process for etching and cleaning a substrate with low etching uniformity, such as removing heavy organic pollution particles on the surface of the substrate by adding hydrogen peroxide or ozone into sulfuric acid; when there is a high process requirement on the uniformity of etching and cleaning the substrate, the second, third and fourth auxiliary methods are used, but these methods have certain limitations, because these methods cannot effectively balance the influence of the unavoidable objective concentration difference phenomenon of the concentration of each region of the chemical liquid in the tank body on the uniformity of etching the substrate, and cannot effectively remove the tiny bubbles (bubbles are generated on the surface of the substrate due to chemical reaction, ultrasonic megasonic cavitation and too high gas content in the chemical liquid) which influence the uniformity of etching the substrate at different positions in the wafer box, that is, the uniformity of etching the substrate in different wafer slots in the wafer box is inconsistent (typically, a wafer box with 25 wafers is arranged in a 4 inch to 8 inch wafer box with 13 wafers is arranged in a 12 inch wafer box). The fifth method adopts ultrasonic wave or megasonic energy to transmit to the surface of the substrate, and uses the cavitation and blasting principles of ultrasonic wave or megasonic bubbles to peel off tiny particles on the surface of the substrate, but the tiny bubbles which are not blasted in time influence the etching of the surface of the substrate, and have a certain influence on the etching process and the etching uniformity.
With the rapid development of the integrated circuit industry and the integration level entering smaller and smaller nanoscale structures, an etching wet processing method and device capable of improving the process yield of high etching process uniformity in wet processing and ensuring high etching uniformity of substrates in each batch are needed in the industry at present. The device and the method of the embodiment of the invention can solve the problem, can also effectively assist the effects of blasting and removing micro bubbles after cavitation in the wet treatment etching process of ultrasonic waves or megasonic waves, are suitable for solar cell substrates and flat panel display substrates, and are particularly suitable for the requirements of high uniformity etching and high yield required in the wet cleaning process of semiconductor integrated circuit substrates.
In one embodiment, referring to fig. 1 and 2, an integrated circuit chip wet processing apparatus for uniformly etching a substrate may include: the vibration device 1, the supporting body 3, the rotation transmission mechanism 4, the shaking mechanism and the cylinder connecting structure 2.
The vibration device 1 may be, for example, a vibration motor, preferably a low-frequency vibration motor, for example, a vibration motor having a vibration frequency of 50 to 3600Hz, and may include a plurality of sets of vibration motors. The vibration of the vibration device 1 has smaller amplitude and larger frequency than the vibration of the vibration mechanism; the jitter is larger in amplitude and smaller in frequency, and the frequency is 30-60 times per minute. The vibration range is in millimeter section, the vibration is in centimeter level, and the vibration can not be performed simultaneously in the structure of the invention.
The supporting body 3 is mounted on the vibrating device 1 through the cylinder connecting structure 2, namely, the vibrating device 1 is connected with the supporting body 3 through the cylinder connecting structure 2, the supporting body 3 is positioned below the vibrating device 1, and the vibrating device 1 is fixed relative to the process groove during operation. The carrier 3 is used for carrying a substrate box, for example, a plurality of hooks 33, for example, four symmetrical hooks 33 may be disposed at the lower end of the carrier 3, each hook 33 may be used for mounting a substrate box carrying basket (not shown in the figure), the substrate box carrying basket may be placed into the substrate box, and a plurality of integrated circuit substrates may be disposed in the substrate box. The carrier 3 may be a manipulator, and the substrate cassette carrier basket is grasped by an electronic control manner and moved into the process tank, and the mounting state is maintained during the processing.
The cylinder connecting structure 2 includes a first cylinder 21 disposed at the lower end of the vibration device 1, and a second cylinder 22 disposed at the upper end of the carrier 3. The second cylinder 22 is rotatably connected to the first cylinder 21 and the second cylinder 22 is movable up and down with respect to the first cylinder 21. Since the first cylinder 21 and the second cylinder 22 are both cylinders, the two cylinders can be connected in a relatively rotating manner by the sleeved relationship, and the second cylinder 22 can move up and down relative to the first cylinder 21, so long as the up and down stroke space of the second cylinder 22 is provided on the first cylinder 21. The vibration device 1 is fixedly connected with the first cylinder 21, and the carrier 3 is fixedly connected with the second cylinder 22, so that the relative movement between the first cylinder 21 and the second cylinder 22 can be realized, namely the relative movement between the vibration device 1 and the carrier 3 can be realized.
The rotation transmission mechanism 4 is connected with the supporting body 3 to drive the supporting body 3 to rotate relative to the vibration device 1 through the cylinder connecting structure 2. Since the carrier 3 is rotatably connected with the vibration device 1, only the carrier 3 rotates and the vibration device 1 is kept still under the drive of the rotation transmission mechanism 4. The rotation transmission mechanism 4 is preferably a corrosion-resistant chain transmission mechanism, and the carrier 3 is provided with a rotation connection part 31, for example, a gear tooth structure which can be matched with a chain. The carrier 3 is driven to rotate by the rotation transmission mechanism 4, and the hanging hooks 33 at the lower end of the carrier rotate around the central shaft of the carrier 3, so that the substrate is rotated in the process groove.
The shaking mechanism is connected with the carrier 3 to drive the carrier 3 to shake up and down relative to the vibration device 1 through the cylinder connecting structure 2, and the range of up and down shaking of the carrier 3 is smaller than or equal to the range of up and down movement of the second cylinder 22 relative to the first cylinder 21. The up-and-down shaking can enable the fluid around the substrate to flow reversely, and the fluid speed on the surface of the substrate is accelerated.
The vibration device 1 is connected with the supporting body 3 through the cylinder connecting structure 2, can finish the vibration, vibration and rotating wet treatment mode on the same structure, does not influence the rotating and vibrating mechanism of the supporting body, transmits vibration energy to the substrate, and prevents and removes micro bubbles generated on the surface of the substrate due to chemical reaction or ultrasonic megasonic cavitation or high gas content in liquid; the shaking mechanism can drive the supporting body to shake up and down, so that the relative fluid velocity change rate of the chemical liquid on the surface of the substrate is increased, tiny bubbles generated on the surface of the substrate due to chemical reaction or ultrasonic megasonic cavitation are removed, and the uniform chemical etching reaction of the surface of the substrate is accelerated; the vibration device 1 and the vibration mechanism can enable the carrier body to vibrate and vibrate simultaneously, so that the bubble removing effect is enhanced, and the etching is more uniform; the rotation transmission mechanism 4 drives the supporting body 3 to rotate and the vibration device is not moved, so that the carrying basket carrying a plurality of substrate boxes can rotate in the chemical tank body, the position of the carrying basket placed in the chemical process tank is changed, the influence of objective concentration differences on the etching rate of substrates at different positions is balanced because of the unavoidable areas of chemical liquid in the tank body, and meanwhile, the stability of vibration is ensured.
In one embodiment, the first cylinder 21 is an outer cylinder having a hollow space, and the second cylinder 22 is an inner cylinder having an outer diameter matching an inner diameter of the first cylinder 21, and may have a certain mechanical tolerance fit. Of course, it is also possible to exchange each other, i.e. the first cylinder 21 is an inner cylinder and the second cylinder 22 is an outer cylinder, as long as the two cylinders can rotate and move up and down relatively. The first cylinder 21 is an outer cylinder, and the second cylinder 22 is an inner cylinder, so that the second cylinder 22 can move in the first cylinder 21 more stably, the stability of the whole device is enhanced, and swing is avoided. The second cylinder 22 is preferably a solid inner cylinder, but may of course be hollow.
The first cylinder 21 has an upper stop and a lower stop. The second cylinder 22 is disposed in the hollow space of the first cylinder 21, and is movable up and down relatively, and the range of up and down movement is limited by the upper and lower stoppers. The second cylinder 22 is not restricted by other parts except the side wall of the first cylinder 21 and the upper and lower blocking parts, and ensures the freedom of rotation and up-and-down movement. The carrier 3 is connected to the second cylinder 22 through the lower stop. The lower gear part is provided with an opening which can enable the carrier 3 to pass through, and the limitation of the second cylinder 22 is not affected.
Through the cooperation connection of the outer cylinder and the inner cylinder, the relative rotation and the up-and-down movement of the supporting body 3 can be realized simultaneously, the stability of the vibration device 1 is kept, the structure is simplified, and the overall stability of the device is ensured.
Preferably, the rotation transmission mechanism 4 and the carrier 3 are both connected to the dithering mechanism, and are dithered together under the action of the dithering mechanism. That is, when the shake mechanism shakes, the rotation transmission mechanism 4 and the carrier 3 move together and are relatively stationary, so that the connection of the rotation transmission mechanism 4 and the rotation connection part 31 of the carrier 3 can be simplified, and the rotation at different height positions can be realized.
In one embodiment, the dithering mechanism may include: cam mechanism 51, support table 52, guide structure 53 and servo motor. Of course, the servo motor and the controllers of the vibration device 1 and the rotation transmission mechanism 4 may be an integral controller or a separate controller.
The rotation transmission mechanism 4 and the bearing body 3 are both connected to the supporting table 52; the cam mechanism 51 is connected with the supporting table 52; the servo motor controls the cam mechanism 51 to move, so that the cam mechanism 51 drives the supporting table 52 to shake up and down. Specifically, the rotation transmission mechanism 4 is mounted on the support base 52, and the support base 52 has an extension arm provided with a through hole to be fastened to the shake coupling portion 32 of the carrier 3.
It will be appreciated that the shake mechanism is not limited to this, and other mechanisms capable of moving up and down within a certain range may be adopted, but the shake mechanism in this embodiment is more compact, has lower cost, and has a more stable structure. The cam mechanism can rotate left and right, so that the supporting table can shake up and down to drive the carrier 3 to shake up and down, and the shaking amplitude is determined according to the size of the cam mechanism 51, namely the movement amplitude.
Preferably, the guide structure 53 is at least two guide posts penetrating the support table 52, two guide posts are shown in the figure, and of course, more than 3 guide posts may be used. The up-and-down shake of the supporting table 52 is guided by the guide posts, so that the offset in the shake process is avoided, and the stability of the shake mechanism is enhanced.
Preferably, the rotation transmission mechanism 4 is connected to the supporting table 52 through a lifting seat 8, and the height of the lifting seat 8 is such that the position where the rotation transmission mechanism 4 is rotationally connected to the carrier 3 is located within a certain distance range below the cylinder connecting structure 2, and the specific distance range is not limited as long as the rotation of the cylinder connecting structure 2 is not affected. The rotation connection portion 31 of the carrier 3 is located near the second cylinder 22, so that the rotation stability is higher, and the probability of swinging during rotation is smaller as the rotation connection portion is closer to the second cylinder 22.
In fig. 1 and 2, it can be seen that the swivel connection 31 of the carrier 3 is closer to the upper end, while its shaking connection 32 is closer to the middle.
Preferably, the dithering mechanism dithers under control of a fade-in pulse generated by a servo motor controlled cam mechanism. The pulse type vertical shaking and the strength is gradually increased, so that the vertical shaking of the substrate can be kept to have acceleration, the speed change of the fluid is continuous, the generation of bubbles on the surface of the substrate is avoided more effectively, and the reaction of chemical etching of the substrate is accelerated.
In one embodiment, the integrated circuit chip wet processing apparatus for uniformly etching a substrate may further include a lifting mechanism 6. The elevating mechanism 6 may be a servo motor driven elevating screw mechanism, but is not limited to this.
The vibration device 1, the rotation transmission mechanism 4 and the shaking mechanism are all connected to the lifting mechanism 6, and the lifting mechanism 6 is controlled to lift together. That is, the device structures included in the integrated circuit chip wet processing device for uniformly etching a substrate in the foregoing embodiments are all disposed on the lifting mechanism 6, and the lifting mechanism 6 can lift and lower the integrated circuit chip wet processing device to realize the change in vertical height. The gradual pulse shaking and rotation of the carrier 3 can be accomplished at different vertical positions by the lifting mechanism 6.
Preferably, the lower end of the carrier 3 is provided with hooks 33 for respectively mounting a substrate cassette capable of accommodating a plurality of substrates. The hooks 33 are symmetrically arranged relative to the lower end of the supporting body 3, so that the stability of the substrate box is maintained, the hooks 33 can be used for mounting the multi-substrate box to support a flower basket, the problem that the etching uniformity of various substrates (four and five elements in a chemical element table) of the integrated circuit is difficult to control is solved, the etching uniformity of the surfaces of the substrates etched by the multi-substrate multi-box is greatly improved, the yield of a wet treatment etching process is effectively increased, and the production cost is reduced.
Preferably, at least the vibration of the carrier 3 by the vibration device 1 and the vibration of the carrier 3 by the vibration mechanism are performed in a time-sharing manner. Referring to fig. 3, the carrier movement may be controlled at intervals during the process time, during which the vibration device 1 may be controlled to vibrate at one position, the dithering mechanism dithers up and down, and then the vibration and dithering continues after rotating at one position, and the interval movement continues until the process time is completed, and the next process is entered.
The integrated circuit chip wet processing device for uniformly etching the substrate is integrated with the traditional feeding and discharging manipulator device (serving as a supporting body), so that the uniformity of substrate etching is greatly improved, the uniform etching speed is accelerated, the traditional functions of the manipulator on the semi-automatic and full-automatic wet processing process equipment are changed, and the process feasibility and yield of the substrates such as integrated circuits are enhanced.
Referring to fig. 3, in combination with the foregoing embodiments, a wet processing method for an integrated circuit chip for uniformly etching a substrate according to the present invention, which employs the wet processing apparatus for an integrated circuit chip for uniformly etching a substrate according to any one of the foregoing embodiments, includes:
obtaining a substrate box containing a plurality of substrates through the supporting body, and placing the substrate box into a corresponding etching process groove;
controlling the vibration device to work, wherein the vibration device transmits vibration energy to the supporting body through the cylinder connecting structure so as to be transmitted to the substrate;
the shaking mechanism is controlled to work, and the shaking mechanism drives the supporting body to vibrate up and down relatively through the cylinder connecting structure, so that the substrate is driven to shake up and down;
the rotary transmission mechanism is controlled to work, and the rotary transmission mechanism drives the supporting body to rotate relatively through the cylinder connecting structure, so that the substrate is driven to rotate, and the position of the substrate box in the etching process groove is changed;
the vibration device, the vibration mechanism and the rotation transmission mechanism are controlled to intermittently work, and at least the vibration of the vibration device to the carrier and the vibration of the vibration mechanism to the carrier are simultaneously carried out.
The embodiment of the invention uses the multi-substrate box to bear the flower basket, thereby increasing the yield of the wet treatment and cleaning process of the integrated circuit substrate and simultaneously ensuring the high uniformity of the chemical liquid etching of the substrate; the pulse up-and-down shaking of the shaking mechanism and the transmission of shaking energy to the substrate by the low-frequency shaking device can increase the chemical reaction speed and the etching uniformity of the substrate, and effectively remove micro bubbles generated on the surface of the substrate due to the chemical reaction, ultrasonic cavitation and other factors, wherein the micro bubbles are a major cause for affecting the etching uniformity.
Practice proves that the method and the device solve the problem of difficult control of the etching uniformity of the multi-substrate and multi-wafer box of various substrates (four and five elements in a chemical element table) of the integrated circuit, greatly improve the etching uniformity of the surfaces of the multi-substrate and multi-wafer box etched substrates, effectively increase the yield of a wet treatment etching process, reduce the production cost, and are simple and easy to popularize. The method and the device can also be used in the equipment of wet treatment processes such as flat panel display substrates, solar cell substrates and the like.
While the invention has been described in terms of the preferred embodiment, it is not intended to limit the scope of the claims, and any person skilled in the art can make variations and modifications without departing from the spirit and scope of the invention, so that the scope of the invention shall be defined by the claims.
Claims (9)
1. An integrated circuit chip wet processing apparatus for uniformly etching a substrate, comprising: the vibration device, the supporting body, the rotation transmission mechanism, the shaking mechanism and the cylinder connecting structure;
the bearing body is mounted on the vibration device through the cylinder connecting structure; the cylinder connecting structure comprises a first cylinder arranged at the lower end of the vibrating device and a second cylinder arranged at the upper end of the supporting body, wherein the second cylinder is rotatably connected to the first cylinder and can move up and down relative to the first cylinder; wherein the first cylinder and the second cylinder are sleeved with each other;
the rotary transmission mechanism is connected with the supporting body so as to drive the supporting body to rotate relative to the vibration device through the cylindrical connecting structure; the shaking mechanism is connected with the supporting body to drive the supporting body to shake up and down relative to the vibrating device through the cylinder connecting structure, and the range of up and down shaking of the supporting body is smaller than or equal to the range of up and down movement of the second cylinder relative to the first cylinder;
the first cylinder is an outer cylinder with a hollow space, and the second cylinder is an inner cylinder with an outer diameter matched with the inner diameter of the first cylinder;
the first cylinder is provided with an upper blocking part and a lower blocking part; the second cylinder is arranged in the hollow space of the first cylinder, can relatively move up and down, and limits the up-down movement range by the upper blocking part and the lower blocking part; the bearing body passes through the lower blocking part and is connected with the second cylinder;
the rotation transmission mechanism and the supporting body are connected to the shaking mechanism, and shake together under the action of the shaking mechanism.
2. The integrated circuit chip wet processing apparatus for uniformly etching a substrate according to claim 1, wherein the dithering mechanism includes: cam mechanism, supporting bench, guide structure and servo motor;
the rotation transmission mechanism and the bearing body are connected to the supporting table; the cam mechanism is connected with the supporting table; the servo motor controls the cam mechanism to move, so that the cam mechanism drives the supporting table to shake up and down.
3. The integrated circuit chip wet processing apparatus for uniformly etching a substrate according to claim 2, wherein the guide structure is at least two guide posts penetrating into the support table.
4. The integrated circuit chip wet processing apparatus for uniformly etching a substrate according to claim 2, wherein the rotation transmission mechanism is connected to the supporting table through a lifting seat, and the lifting seat is at a height such that a portion of the rotation transmission mechanism rotationally connected to the carrier is located within a certain distance below the cylindrical connection structure.
5. The integrated circuit chip wet processing apparatus for uniformly etching a substrate according to claim 2, wherein the dithering mechanism is dithered under the control of a fade-in pulse generated by a servo motor control cam mechanism.
6. The integrated circuit chip wet processing apparatus for uniformly etching a substrate according to claim 1, further comprising a lifting mechanism,
the vibration device, the rotation transmission mechanism and the shaking mechanism are all connected to the lifting mechanism, and lift occurs together under the control of the lifting mechanism.
7. The integrated circuit chip wet processing apparatus for uniformly etching a substrate according to claim 1, wherein the lower end of the carrier is provided with a plurality of hooks for respectively mounting a substrate cassette accommodating a plurality of substrates.
8. The integrated circuit chip wet processing apparatus for uniformly etching a substrate according to claim 7, wherein at least the vibration of the carrier by the vibration means and the vibration of the carrier by the vibration mechanism are performed in a time-sharing manner.
9. An integrated circuit chip wet processing method for uniformly etching a substrate, characterized in that an integrated circuit chip wet processing apparatus for uniformly etching a substrate according to any one of claims 1 to 4 and 6 to 8 is employed, the method comprising:
obtaining a substrate box containing a plurality of substrates through the supporting body, and placing the substrate box into a corresponding etching process groove;
controlling the vibration device to work, wherein the vibration device transmits vibration energy to the supporting body through the cylinder connecting structure so as to be transmitted to the substrate;
the shaking mechanism is controlled to work, and the shaking mechanism drives the supporting body to shake up and down relatively through the cylinder connecting structure, so that the substrate is driven to shake up and down;
the rotary transmission mechanism is controlled to work, and the rotary transmission mechanism drives the supporting body to rotate relatively through the cylinder connecting structure, so that the substrate is driven to rotate, and the position of the substrate box in the etching process groove is changed;
wherein the vibration device, the shaking mechanism and the rotation transmission mechanism are controlled to intermittently operate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810288503.1A CN108281372B (en) | 2018-03-30 | 2018-03-30 | Integrated circuit chip wet processing device and method for uniformly etching substrate |
Applications Claiming Priority (1)
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| CN111495858A (en) * | 2020-04-26 | 2020-08-07 | 上海思恩装备科技股份有限公司 | Cleaning method and device for special-shaped component |
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| US5868898A (en) * | 1996-11-21 | 1999-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fluid dispensing device for wet chemical process tank and method of using |
| KR20050094719A (en) * | 2004-03-24 | 2005-09-28 | (주)울텍 | The apparatus for wet etching |
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| WO2013033932A1 (en) * | 2011-09-09 | 2013-03-14 | 深圳市华星光电技术有限公司 | Wet etching device and method |
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| JP2004207503A (en) * | 2002-12-25 | 2004-07-22 | Canon Inc | Treatment apparatus |
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| US20130062015A1 (en) * | 2011-09-09 | 2013-03-14 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Wet etching apparatus and method |
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| US5868898A (en) * | 1996-11-21 | 1999-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fluid dispensing device for wet chemical process tank and method of using |
| JPH10229066A (en) * | 1997-02-14 | 1998-08-25 | Canon Inc | Wafer processor and method thereof, wafer-carrying robot, manufacture of semiconductor substrate, and semiconductor manufacture device |
| KR20050094719A (en) * | 2004-03-24 | 2005-09-28 | (주)울텍 | The apparatus for wet etching |
| CN101924031A (en) * | 2009-06-16 | 2010-12-22 | 倪党生 | System and method for treating substrate by using nano vaporific chemical agent |
| WO2013033932A1 (en) * | 2011-09-09 | 2013-03-14 | 深圳市华星光电技术有限公司 | Wet etching device and method |
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