CN111725111B - Reaction chamber of semiconductor process equipment and semiconductor process equipment - Google Patents
Reaction chamber of semiconductor process equipment and semiconductor process equipment Download PDFInfo
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- CN111725111B CN111725111B CN202010594477.2A CN202010594477A CN111725111B CN 111725111 B CN111725111 B CN 111725111B CN 202010594477 A CN202010594477 A CN 202010594477A CN 111725111 B CN111725111 B CN 111725111B
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- housing
- shell
- reaction chamber
- sealing
- sealing ring
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a reaction chamber of semiconductor process equipment and the semiconductor process equipment, wherein the reaction chamber is provided with a base for bearing wafers, and comprises a chamber body, an upper electrode and a driving mechanism; the upper electrode comprises a dielectric window and an electrode shell, the electrode shell comprises a first shell and a second shell, the first shell is connected with the cavity body, the first shell is sleeved on the second shell, and the second shell can move relative to the first shell; the driving mechanism is arranged on the first shell, is connected with the second shell and is used for driving the second shell to be far away from or close to the base; the dielectric window is arranged in the second shell and can be far away from or close to the base along with the second shell. The scheme can solve the problem that the processing efficiency of the semiconductor process equipment is poor because the time for adjusting the GAP value of the cavity is long.
Description
Technical Field
The present disclosure relates to semiconductor manufacturing technology, and more particularly, to a reaction chamber of a semiconductor processing apparatus and a semiconductor processing apparatus.
Background
Semiconductor etching equipment (etchers) is an important semiconductor processing equipment in semiconductor manufacturing processes. In the related art, the distance from the bottom surface of the dielectric window (or the bottom surface of the air inlet nozzle) of the etching machine to the upper surface of the wafer is the GAP value of the chamber, and in different processing technologies, the GAP value of the chamber (process GAP) is quite different, so that the etching machine needs to replace different adjusting brackets to adjust the distance from the bottom surface of the dielectric window (or the bottom surface of the air inlet nozzle) to the upper surface of the wafer, thereby being capable of meeting the GAP value of the chamber suitable for different technologies.
When the GAP value of the chamber is adjusted, the chamber needs to be opened and then the adjusting bracket is replaced, however, the reaction chamber of the semiconductor process equipment is in a vacuum condition, so that the chamber needs to be opened after the reaction chamber of the semiconductor process equipment is processed, the adjusting bracket is complicated to replace, the time spent by the semiconductor process equipment for adjusting the GAP value of the chamber is long, and the processing efficiency of the semiconductor process equipment is further affected.
Disclosure of Invention
The invention discloses a reaction chamber of semiconductor process equipment and the semiconductor process equipment, which are used for solving the problem that the processing efficiency of the semiconductor process equipment is poor due to longer time spent by the semiconductor process equipment for adjusting the GAP value of the chamber.
In order to solve the problems, the invention adopts the following technical scheme:
a reaction chamber of a semiconductor process apparatus, the reaction chamber having a susceptor disposed therein for carrying a wafer, the reaction chamber comprising a chamber body, an upper electrode, and a driving mechanism;
the upper electrode comprises a dielectric window and an electrode shell, the electrode shell comprises a first shell and a second shell, the first shell is connected with the cavity body, the first shell is sleeved on the second shell, and the second shell can move relative to the first shell;
the driving mechanism is arranged on the first shell, is connected with the second shell and is used for driving the second shell to be far away from or close to the base;
the dielectric window is arranged in the second shell and can be far away from or close to the base along with the second shell.
A semiconductor processing apparatus comprises the reaction chamber.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the reaction chamber of the semiconductor process equipment disclosed by the invention, the driving mechanism is arranged on the first shell, and the driving mechanism is connected with the second shell, and can drive the second shell to be far away from or close to the base, and the dielectric window is arranged in the second shell, so that the dielectric window can be far away from or close to the base along with the second shell, and the distance between the bottom surface of the dielectric window and the upper surface of the wafer can be adjusted, thereby realizing the adjustment of the GAP value of the chamber. In this scheme, the electrode casing is two-layer structure to two-layer structure can relative movement, and then makes the reaction chamber need not the chamber and can realize the adjustment to the cavity GAP value, and then makes the semiconductor processing equipment when changing processing technology, and cavity GAP value adjustment is convenient, and the time spent is shorter, and then improves the machining efficiency of semiconductor processing equipment.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a cross-sectional view of a reaction chamber disclosed in an embodiment of the present invention;
FIG. 2 is a top view of a reaction chamber according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a portion of a reaction chamber according to an embodiment of the present invention;
FIGS. 4 to 6 are partial structural sectional views of a reaction chamber according to an embodiment of the present invention;
FIG. 7 is a schematic structural view of a second housing in the reaction chamber according to the embodiment of the present invention;
fig. 8 is a partial cross-sectional view of a second housing in a reaction chamber according to an embodiment of the present invention.
Reference numerals illustrate:
100-chamber body,
200-upper electrode, 210-electrode housing, 211-first housing, 2111-chamfer, 212-second housing, 2121-first seal groove 2122-bearing table, 220-dielectric window, 230-air inlet nozzle, 240-upper electrode coil, 250-matcher, 260-top cover,
300-chip,
400-base,
510-a first sealing ring, 520-a second sealing ring, 530-a third sealing ring,
600-limit groove,
700-driving mechanism, 710-driving source, 720-driving member,
800-distance sensor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 8, the embodiment of the present invention discloses a reaction chamber of a semiconductor process apparatus, and the disclosed reaction chamber may include a chamber body 100, an upper electrode 200, a driving mechanism 700, and a susceptor 400.
The chamber body 100 and the upper electrode 200 enclose a reaction chamber, the susceptor 400 is disposed in the reaction chamber, the susceptor 400 is used for carrying a wafer, optionally, the susceptor 400 may include an electrostatic chuck for adsorbing the wafer 300, and a lower electrode for providing an adsorption voltage for the electrostatic chuck for adsorbing the wafer 300, wherein the wafer 300 is etched in the reaction chamber.
The upper electrode 200 includes a dielectric window 220, an electrode housing 210, an air inlet nozzle 230, a top plate 260, an upper electrode coil 240, and a matcher 250. The electrode housing 210 includes a first housing 211 and a second housing 212, the first housing 211 is connected to the chamber body 100, the first housing 211 is sleeved on the second housing 212, and the second housing 212 is movable relative to the first housing 211. The top plate 260 and the second housing 212 form an installation space, the dielectric window 220, the upper electrode coil 240, and other components are located in the installation space, the matching unit 250 is installed on the top plate 260, and the matching unit 250 and the upper electrode coil 240 are respectively disposed on both sides of the top plate 260. The gas inlet nozzle 230 is disposed on the dielectric window 220, the gas inlet nozzle 230 is in communication with the reaction chamber, and the reaction gas is introduced into the reaction chamber through the gas inlet nozzle 230. The matcher 250 applies a radio frequency voltage to the upper electrode coil 240, so that the upper electrode coil 240 can generate an ionization electric field, and thus the reaction gas in the reaction chamber is ionized.
The driving mechanism 700 is disposed on the first housing 211, and the driving mechanism 700 is connected to the second housing 212, where the driving mechanism 700 is used to drive the second housing 212 to move in a direction away from or close to the base 400, so as to drive the second housing 212 away from or close to the base 400. The dielectric window 220 is disposed in the second housing 212, and the dielectric window 220 is movable with the second housing 212 in a direction away from or close to the base 400, so that the dielectric window 220 is movable with the second housing 212 away from or close to the base 400.
Alternatively, the driving mechanism 700 may drive the second housing 212 to move in a plurality of ways, for example, the driving mechanism 700 may be a servo electrode, and a servo motor is connected to the second housing 212 to drive the second housing 212 to move. Of course, the motor may be a stepping motor, a dc brushless electrode, or the like, which is not limited by the embodiment of the present invention. The driving mechanism 700 may be disposed outside the reaction chamber or inside the reaction chamber. When the driving mechanism 700 is disposed in the reaction chamber, the driving mechanism 700 may be disposed outside the reaction chamber because the driving mechanism 700 may easily interfere with other components in the reaction chamber.
In a specific operation process, when the driving mechanism 700 drives the second housing 212 to approach the base 400, the wafer 300 is supported on the base 400 because the base 400 is fixed in the reaction chamber, so that the distance between the base 400 and the dielectric window 220 is reduced, and the distance from the bottom surface of the dielectric window 220 (or the bottom surface of the air inlet nozzle 230) to the upper surface of the wafer 300 is also reduced, thereby reducing the GAP value of the chamber; when the driving mechanism 700 drives the second housing 212 away from the susceptor 400, the distance from the bottom surface of the dielectric window 220 (or the bottom surface of the air inlet nozzle 230) to the upper surface of the wafer 300 increases, so that the GAP value of the chamber increases.
In the embodiment disclosed by the invention, the electrode shell 210 is of a two-layer structure, and the two-layer structure can relatively move, so that the reaction chamber can realize the adjustment of the GAP value of the chamber without opening a cavity, the GAP value of the chamber is convenient to adjust when the semiconductor process equipment changes the processing technology, the time spent on the adjustment of the GAP value of the chamber is short, and the processing efficiency of the semiconductor process equipment is further improved.
In addition, the above embodiment can realize the stepless adjustment of the second housing 212, so that the stepless adjustment of the GAP value of the chamber can be realized, and the accuracy of the GAP value of the chamber is higher, so that the process of the semiconductor process equipment can achieve a better effect.
A liner is disposed in the reaction chamber and is coupled to the second housing 212 for protecting the sidewall of the chamber body 100. Since the second shell 212 is connected to the liner, the liner may be manufactured as a telescopic structure.
To improve the sealing performance between the first housing 211 and the second housing 212, in an alternative embodiment, the upper electrode 200 may further include a first sealing ring 510, a first sealing groove 2121 may be formed on a sidewall of the second housing 212, the first sealing ring 510 may be located in the first sealing groove 2121, and the first housing 211 and the second housing 212 may be in sealing engagement with each other through the first sealing ring 510. At this time, the first sealing ring 510 can seal the gap between the inner sidewall of the first housing 211 and the outer sidewall of the second housing 212, so as to improve the sealing performance between the first housing 211 and the second housing 212, further prevent the vacuum environment in the reaction chamber from being damaged, and further improve the safety of the reaction chamber.
In the above embodiment, when only one first seal ring 510 is provided to seal the first housing 211 and the second housing 212, in the case where the distance that the second housing 212 moves is long, the first seal ring 510 easily slides out from the gap between the first housing 211 and the second housing 212, thereby causing the sealing engagement of the first housing 211 and the second housing 212 to be broken. To this end, in an alternative embodiment, the number of the first seal rings 510 may be plural, the number of the first seal grooves 2121 may be plural, and the plural first seal rings 510 and the plural first seal grooves 2121 may be in one-to-one correspondence. In this solution, the number of the first seal rings 510 is large, even if a part of the first seal rings 510 is located outside the gap between the first housing 211 and the second housing 212, a part of the first seal rings 510 still can seal the gap between the first housing 211 and the second housing 212, so as to prevent the sealing fit between the first housing 211 and the second housing 212 from being damaged, and further improve the sealing performance of the reaction chamber.
Alternatively, a plurality of first sealing grooves 2121 may be cut at different heights on the outer sidewall of the second housing 212, and the number of the first sealing grooves 2121 may be selected according to actual conditions, which is not limited herein. The first seal ring 510 may be made of sealing rubber, sealing silica gel, or the like.
In the above embodiment, when the driving mechanism 700 drives the second housing 212 to move in the direction approaching the base 400, at this time, the first seal ring 510 located outside the gap between the first housing 211 and the second housing 212 needs to re-enter into the gap between the first housing 211 and the second housing 212, however, the inner side edge of the second housing 212 easily catches the first seal ring 510, resulting in difficulty in the first seal ring 510 entering into the gap between the first housing 211 and the second housing 212. To this end, in another alternative embodiment, the first housing 211 faces away from one end of the chamber body 100, and the inner edge of the first housing 211 near the second housing 212 may be provided with a chamfer 2111. In this embodiment, the chamfer 2111 is smoother, so that the first sealing ring 510 can smoothly enter the gap between the first housing 211 and the second housing 212, thereby improving the reliability of the reaction chamber. Alternatively, the surface of the chamfer 2111 contacting the first seal ring 510 may be a plane or an arc surface, which is not limited herein.
In the above embodiment, the seal between the first housing 211 and the second housing 212 is a dynamic seal, so that the first seal ring 510 is easily dislocated during the movement along with the second housing 212, and the sealing performance between the first housing 211 and the second housing 212 is further affected.
For this purpose, a specific structure of the first seal groove 2121 is disclosed herein, and other structures may be adopted, which is not limited herein. Specifically, the cross-sectional area of the first seal groove 2121 gradually decreases in a groove opening direction from the groove bottom of the first seal groove 2121 to the first seal groove 2121. At this time, the first sealing groove 2121 is a dovetail groove, the width of the notch of the first sealing groove 2121 is smaller, the width of the groove bottom is larger, and the first sealing groove 2121 can clamp the first sealing ring 510, so that the dislocation of the first sealing ring 510 in the moving process can be effectively prevented, and the sealing performance between the first housing 211 and the second housing 212 can be improved.
Of course, the first seal groove 2121 may have other structures, which are not limited herein.
Further, the reaction chamber may further include a second sealing ring 520, the end surface of the chamber body 100 contacting with the first housing 211 may be provided with a second sealing groove, the second sealing ring 520 is located in the second sealing groove, and the first housing 211 may be in sealing fit with the chamber body 100 through the second sealing ring 520. In this scheme, the gap of junction that second sealing washer 520 can shutoff first casing 211 and cavity body 100 to can improve the sealing performance between first casing 211 and the cavity body 100, and then prevent that the vacuum environment in the reaction chamber from being destroyed, and then improve the security of reaction chamber.
Alternatively, the second seal groove may be a dovetail groove, although other structures are possible, and are not limited herein. The second seal 520 may be made of a sealing rubber, a sealing silica gel, or the like.
In the above embodiment, the reaction gas in the reaction chamber enters the upper electrode 200, which is easy to cause damage to components in the upper electrode 200, for this purpose, in an alternative embodiment, the upper electrode 200 may further include a third sealing ring 530, a bearing table 2122 for bearing the dielectric window 220 may be disposed at the bottom end of the second housing 212, a third sealing groove may be disposed on the top surface of the bearing table 2122, the third sealing ring 530 may be located in the third sealing groove, and the second housing 212 and the dielectric window 220 may be in sealing fit through the third sealing ring 530. At this time, the third sealing ring 530 can seal the gap at the connection between the second housing 212 and the dielectric window 220, so as to improve the sealing performance between the second housing 212 and the dielectric window 220, further prevent the reaction gas from entering the upper electrode 200, and further improve the safety of the reaction chamber. Alternatively, the third seal groove may be a dovetail groove, although other structures are possible, and the present disclosure is not limited thereto. The third sealing ring 530 may be made of sealing rubber, sealing silica gel, or the like.
The present invention discloses a specific structure of the driving mechanism 700, but other structures may be adopted, and the present invention is not limited thereto. The driving mechanism 700 may include a driving source 710 and a transmission member 720, where the driving source 710 may be disposed on the first housing 211, one end of the transmission member 720 is connected to a driving shaft of the driving source 710, the other end of the transmission member 720 is connected to the second housing 212, the driving source 710 may drive the transmission member 720 to move, and the transmission member 720 drives the second housing 212 to be far away from or near the base 400. In this solution, the second housing 212 is connected to the driving source 710 through the transmission member 720, so that the position of the driving source 710 can be flexibly set, and the axial direction of the driving shaft of the driving source 710 and the moving direction of the second housing 212 can be set to be the same, so that the second housing 212 is not easy to deflect in the moving process. In addition, such a driving mechanism 700 is simple and easy to operate. Alternatively, the driving source 710 may be a driving motor, a cylinder, etc., and the driving member 720 may be a connecting rod, a gear, a rack, a conveyor belt, etc.
In another alternative embodiment, the transmission member 720 and the second housing 212 may be screwed by a threaded connection member, and at this time, the transmission member 720 may be detached from the second housing 212, so that the transmission member 720 or the second housing 212 may be repaired or replaced, thereby improving the maintainability of the reaction chamber.
In an alternative embodiment, the second housing 212 may be provided with a limiting slot 600, and a portion of the transmission member 720 is located in the limiting slot 600. At this time, the driving member 720 is in a limit fit with the limit groove 600, and the limit groove 600 can play a role in installation and positioning, and meanwhile, can prevent the driving member 720 from deflecting in the moving process.
Since the second housing 212 has many components mounted thereon, the weight of the second housing 212 is large, and when the second housing 212 is driven by only one driving mechanism 700, the driving force of the driving mechanism 700 is small, and thus the moving rate of the second housing 212 is slow. To this end, in an alternative embodiment, the number of driving mechanisms 700 may be plural, and the plurality of driving mechanisms 700 may be spaced around the second housing 212. In this embodiment, the number of the driving mechanisms 700 is larger, so that a larger driving force can be provided, so that the moving speed of the second housing 212 is faster, the time for adjusting the GAP value of the chamber is further shortened, and the processing efficiency of the semiconductor processing equipment is further improved.
In the above embodiment, since the weight distribution of the second housing 212 is not uniform, the position driving mechanism 700 with a larger weight of the second housing 212 can be set more compactly, and the position driving mechanism 700 with a smaller weight of the second housing 212 can be set relatively dispersedly, so that the driving force received by the second housing 212 is more uniform, and further the first housing 211 and the second housing 212 can be prevented from being jammed.
In order to prevent the first housing 211 and the second housing 212 from being jammed, good concentricity between the first housing 211 and the second housing 212 is required, thereby preventing the second housing 212 from being jammed in the first housing 211.
Alternatively, the number of driving mechanisms 700 may be three, although other numbers are possible, and are not limited herein.
It should be noted that, when one of the driving mechanisms 700 fails and cannot operate, the other driving mechanisms 700 must also stop operating, so as to prevent the semiconductor processing equipment from being damaged.
For more accurate control of the chamber GAP values, in an alternative embodiment, at least one of the first housing 211 and the second housing 212 may be provided with a distance sensor 800, the distance sensor 800 being used to measure the moving distance of the second housing 212. In this scheme, the distance sensor 800 may measure the moving distance of the second housing 212 relative to the first housing 211, and the moving distance of the second housing 212 may be used to feedback to obtain the GAP value of the chamber, so as to implement programming control of the GAP value of the chamber, and automatically adjust the GAP value of the chamber according to different process types, thereby making the semiconductor process equipment change different processing technologies more conveniently and more intelligently, and further improving the usability of the semiconductor process equipment.
Based on the reaction chamber of the semiconductor process equipment of any one of the embodiments of the present invention, the embodiment of the present invention may further include a semiconductor process equipment, where the semiconductor process equipment has the reaction chamber of the semiconductor process equipment of any one of the embodiments described above. The semiconductor processing apparatus may be an etcher or other wafer processing apparatus, as not limited in this regard.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present invention and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are to be included in the scope of the claims of the present invention.
Claims (10)
1. A reaction chamber of a semiconductor processing apparatus, the reaction chamber having a susceptor (400) disposed therein for carrying a wafer, characterized in that the reaction chamber comprises a chamber body (100), an upper electrode (200) and a driving mechanism (700);
the upper electrode (200) is located at the top end of the chamber body (100) and forms a reaction cavity with the chamber body (100), the upper electrode (200) comprises a dielectric window (220) and an electrode shell (210), the electrode shell (210) comprises a first shell (211) and a second shell (212), the first shell (211) is connected with the chamber body (100), the first shell (211) is sleeved on the second shell (212), and the second shell can move relative to the first shell (211);
the driving mechanism (700) is arranged on the first shell (211) and connected with the second shell (212) for driving the second shell (212) to be far away from or close to the base (400);
the dielectric window (220) is arranged in the second shell (212), and the dielectric window (220) can be far away from or close to the base (400) along with the second shell (212);
the reaction chamber is internally provided with a lining, the lining is used for protecting the side wall of the chamber body (100), and the second shell (212) is positioned above the lining.
2. The reaction chamber of claim 1, wherein the upper electrode (200) further comprises a first sealing ring (510), a first sealing groove (2121) is formed in a side wall of the second housing (212), the first sealing ring (510) is located in the first sealing groove (2121), and the first housing (211) and the second housing (212) are in sealing fit through the first sealing ring (510).
3. The reaction chamber of claim 2, wherein the number of the first seal rings (510) is plural, the number of the first seal grooves (2121) is plural, and the plurality of the first seal rings (510) are in one-to-one correspondence with the plurality of the first seal grooves (2121).
4. A reaction chamber according to claim 3, characterized in that the first housing (211) is directed away from one end of the chamber body (100) and is provided with a chamfer (2111) near the inner edge of the second housing (212).
5. The reaction chamber according to claim 1, further comprising a second sealing ring (520), wherein a second sealing groove is formed on an end surface of the chamber body (100) contacting with the first housing (211), the second sealing ring (520) is located in the second sealing groove, and the first housing (211) is in sealing fit with the chamber body (100) through the second sealing ring (520).
6. The reaction chamber of claim 1, wherein the upper electrode (200) further comprises a third sealing ring (530), a bearing table (2122) for bearing the dielectric window (220) is arranged at the bottom end of the second housing (212), a third sealing groove is formed in the top surface of the bearing table (2122), the third sealing ring (530) is located in the third sealing groove, and the second housing (212) and the dielectric window (220) are in sealing fit through the third sealing ring (530).
7. The reaction chamber of claim 1, wherein the driving mechanism (700) comprises a driving source (710) and a transmission member (720), the driving source (710) is disposed on the first housing (211), one end of the transmission member (720) is connected with a driving shaft of the driving source (710), the other end of the transmission member is connected with the second housing (212), and the driving source (710) drives the transmission member (720) to drive the second housing (212) to be far away from or close to the base (400).
8. The reaction chamber of claim 1 wherein the number of drive mechanisms (700) is a plurality, a plurality of the drive mechanisms (700) being spaced around the second housing (212).
9. The reaction chamber according to claim 1, characterized in that a distance sensor (800) is provided on at least one of the first housing (211) and the second housing (212), the distance sensor (800) being used for measuring the movement distance of the second housing (212).
10. A semiconductor processing apparatus comprising a reaction chamber according to any one of claims 1 to 9.
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| CN202010594477.2A CN111725111B (en) | 2020-06-24 | 2020-06-24 | Reaction chamber of semiconductor process equipment and semiconductor process equipment |
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