CN113241313B - Semiconductor chamber and semiconductor equipment - Google Patents
Semiconductor chamber and semiconductor equipment Download PDFInfo
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- CN113241313B CN113241313B CN202110501887.2A CN202110501887A CN113241313B CN 113241313 B CN113241313 B CN 113241313B CN 202110501887 A CN202110501887 A CN 202110501887A CN 113241313 B CN113241313 B CN 113241313B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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Abstract
The application discloses a semiconductor chamber, includes chamber body (100) and magnetic field adjustment mechanism (200), and magnetic field adjustment mechanism (200) includes support (210) and a plurality of magnetic member (220), wherein: the support (210) is arranged outside the chamber body (100), the plurality of magnetic members (220) are movably arranged on the support (210), the plurality of magnetic members (220) are arranged around the chamber body (100), each magnetic member (220) can be switched between a first position and a second position, and under the condition that the magnetic members (220) are in the first position, a magnetic field formed by the magnetic members (220) is positioned outside the chamber body (100); with the magnetic member (220) in the second position, the magnetic field created by the magnetic member (220) is at least partially within the chamber body (100). The technical scheme can solve the problem that the magnetic field intensity in the semiconductor chamber is inconvenient to adjust. The present application also discloses a semiconductor device.
Description
Technical Field
The present disclosure relates to semiconductor processing, and more particularly to a semiconductor chamber and a semiconductor device.
Background
Sputtering is a commonly used semiconductor processing technique, in which a target material is bombarded by energetic particles, so that atoms, molecules or clusters of beams escape from the surface of the target material, and the escaped atoms, molecules or clusters of beams are deposited on a workpiece to be processed, thereby forming a thin film on the workpiece to be processed (such as a wafer). In order to make the film formed on the workpiece uniform after the charged particles impact the target, a magnetic field adjusting mechanism is required to be introduced, and the magnetic field adjusting mechanism controls the distribution of the charged particles by adjusting the distribution condition of the magnetic field in the semiconductor chamber.
In recent years, the importance and challenges of depositing dielectric and metal layers in high aspect ratio vias with vertical interconnect technology have increasingly emerged. Particularly, for the application in the field of deep hole filling, on one hand, the application field of PVD equipment is expanded, and on the other hand, higher requirements are also put forward on the PVD equipment. In order to satisfy the filling of high aspect ratio pores, long-range PVD techniques are widely used and a magnetic field adjusting mechanism is introduced to adjust the uniformity of thin film deposition. In the related art, the magnetic field adjusting mechanism adjusts the magnetic field distribution in the semiconductor chamber by detaching the magnetic member in the magnetic field adjusting mechanism, specifically, adjusting the magnetic field distribution by installing and detaching the magnetic member, which is inconvenient in adjustment, and thus, the adjustment efficiency is low, and the processing efficiency of the semiconductor processing technology is low.
Disclosure of Invention
The application provides a semiconductor cavity and semiconductor equipment, can solve the prior art and have inconvenient problem to the magnetic field regulation in the semiconductor cavity.
In a first aspect, the present application provides a semiconductor chamber, including a chamber body and a magnetic field adjusting mechanism, the magnetic field adjusting mechanism including a support and a plurality of magnetic members, wherein:
the bracket is arranged outside the chamber body, the plurality of magnetic pieces are movably arranged on the bracket and arranged around the chamber body, each magnetic piece can be switched between a first position and a second position,
with the magnetic member in the first position, a magnetic field formed by the magnetic member is located outside the chamber body; with the magnetic member in the second position, the magnetic field created by the magnetic member is at least partially within the chamber body.
In a second aspect, the present application provides a semiconductor device comprising the semiconductor chamber described above.
Compared with the related art, the beneficial effects of the application are as follows:
the semiconductor chamber disclosed in the embodiment of the application is improved by the related technology, so that the plurality of magnetic pieces surrounding the chamber body are movably arranged on the bracket, each magnetic piece can move relative to the bracket, the position of the magnetic field generated by the magnetic piece relative to the chamber body is changed, and finally the magnetic field applied to the chamber body by the whole magnetic field adjusting mechanism can be flexibly adjusted by adjusting the position of the magnetic piece. Compared with the prior art in which the magnetic field is adjusted by removing or adding the magnetic members to change the number of the magnetic members, the semiconductor chamber disclosed in the embodiment of the present application undoubtedly enables the adjustment operation of the magnetic field applied to the chamber body to be simpler and more convenient.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 and 2 are schematic structural views of a semiconductor chamber according to an embodiment of the present application with a magnetic member in different positions;
fig. 3 and 4 are schematic structural diagrams of a semiconductor chamber according to another embodiment of the present application with a magnetic member in different positions;
FIGS. 5 and 6 are schematic views of a semiconductor chamber according to yet another embodiment of the present application with a magnetic member in different positions;
FIG. 7 is a schematic structural diagram of a specific magnetic field adjustment mechanism disclosed in an embodiment of the present application;
FIG. 8 is a sectional view taken along line A-A of FIG. 7;
fig. 9 is a top view of the first magnetically permeable ring;
FIG. 10 is a sectional view taken along line B-B of FIG. 9;
FIG. 11 is a top view of the magnetism isolating ring;
FIG. 12 is a cross-sectional view taken along line C-C of FIG. 11;
fig. 13 is a top view of a second flux ring;
FIG. 14 is a cross-sectional view taken along line D-D of FIG. 13;
FIG. 15 is a schematic view of the magnetic field generated by the magnetic member in the second position;
FIG. 16 is a schematic view of the magnetic field generated by the magnetic member in the first position;
fig. 17 is a schematic structural view of a semiconductor chamber according to yet another embodiment of the present application.
Description of reference numerals:
100-a chamber body, the chamber body,
200-a magnetic field adjusting mechanism, wherein,
210-bracket, 211-first magnetizer, 211 ' -first magnetizer, 211 a-first groove, 211 b-first air hole, 212-magnetism isolating piece, 212 ' -magnetism isolating piece, 212 a-through hole, 213-second magnetizer, 213 ' -second magnetizer, 213 a-second groove, 213 b-second air hole, 210 ' -bracket, 201 ' -bracket,
220-magnetic part, 220 '-magnetic part, 202' -magnetic part,
230-a first sealing ring-the first sealing ring,
240-a second sealing ring, which is,
250-a third sealing ring, wherein the third sealing ring,
300-magnetron component, 400-target component, 500-bearing base, 600-direct current power supply and 700-bias power supply.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 1 to 17, the present application discloses a semiconductor chamber, which may be applied to a semiconductor apparatus.
Referring again to fig. 1 and 2, the semiconductor chamber disclosed herein includes a chamber body 100 and a magnetic field adjusting mechanism 200.
The chamber body 100 is a body member of a semiconductor chamber, and the chamber body 100 can receive a workpiece to be processed and perform a semiconductor process on the workpiece. The workpiece to be processed may be a wafer or wafer (wafer), and the application does not limit the specific kind of workpiece to be processed.
At the same time, the chamber body 100 may provide a mounting base for at least some of the other components of the semiconductor chamber. The magnetic field adjusting mechanism 200 is mounted on the chamber body 100. In the embodiment of the present application, the magnetic field adjusting mechanism 200 may be configured to adjust the magnetic field applied to the semiconductor chamber, so as to change the magnetic field distribution, so that the magnetic field distribution in the semiconductor chamber can match the process conditions performed on the workpiece to be processed.
The magnetic field adjustment mechanism 200 includes a support 210 and a plurality of magnetic members 220, the support 210 being disposed outside the chamber body 100. Specifically, the support 210 may be fixedly connected to the chamber body 100, and the support 210 may also be movably connected to the chamber body 100, which is not limited in this application.
Each of the magnetic members 220 may generate a magnetic field. Specifically, the magnetic member 220 may be a permanent magnet. The bracket 210 provides a mounting base for the magnetic members 220, the plurality of magnetic members 220 are movably disposed on the bracket 210, and each magnetic member 220 can be switched between a first position and a second position. In the present embodiment, a plurality of magnetic members 220 are disposed around the chamber body 100.
As shown in fig. 1, with the magnetic member 220 in the first position, the magnetic field formed by the magnetic member 220 is outside the chamber body 100. At this time, the magnetic field formed by the magnetic member 220 in the first position does not affect the process gas in the chamber body 100, and the magnetic member 220 in the first position is in a non-operating state.
As shown in fig. 2, with the magnetic member 220 in the second position, at least a portion of the magnetic field formed by the magnetic member 220 in the second position is within the chamber body 100. At this time, the magnetic field formed by the magnetic member 220 in the second position may act on the process gas in the chamber body 100, and the magnetic member 220 in the second position is in an operating state.
As described above, the semiconductor chamber disclosed in the embodiment of the present application includes the plurality of magnetic members 220, and each of the magnetic members 220 can be switched between the first position and the second position. By adjusting the positions of at least some of the magnetic members 220, the plurality of magnetic members 220 can form a more diverse magnetic field, and the process conditions corresponding to the semiconductor chamber can be flexibly matched.
In the semiconductor chamber disclosed in the embodiment of the present application, the chamber body 100 may be used to accommodate a workpiece to be processed, and when the magnetic member 220 in the magnetic field adjusting mechanism 200 is switched between the first position and the second position, the magnetic field generated by the magnetic member 220 may act on the inside of the chamber body 100 or the outside of the chamber body 100. When a process condition is applied to a workpiece to be processed in the chamber body 100, at least a portion of the magnetic field generated by the magnetic member 220 can be applied to the chamber body 100 by disposing a corresponding number of magnetic members 220 at the second position (as shown in fig. 2), thereby achieving the purpose of adjusting the distribution of the process gas. When the workpiece to be processed in the chamber body 100 is subjected to another process condition, the magnetic field generated by the magnetic member 220 can be no longer applied to the chamber body 100 by switching the corresponding number of magnetic members 220 to the first position (as shown in fig. 1). The first position and the second position of the magnetic member 220 shown in fig. 1 and 2 related to the present application are only for illustrative purposes, and are not limited thereto, as long as the position of the magnetic member 220 is changed, so that when the magnetic member 220 is at one position, the generated magnetic field does not affect the process gas in the chamber body 100, that is, the first position, where the magnetic member 220 at the first position is in a non-operating state; by changing the position of the magnetic element 220, the magnetic element 220 is located at another position, at least a part of the formed magnetic field is located in the chamber body 100, i.e. at a second position, where the magnetic element 220 is in the working state.
As can be seen from the above working process, the semiconductor chamber disclosed in the embodiment of the present application improves the related art, such that the plurality of magnetic members 220 surrounding the chamber body 100 are movably disposed on the support 210, and each of the magnetic members 220 can move relative to the support 210, so as to change the position of the magnetic field generated by itself relative to the chamber body 100, and finally, the magnetic field applied to the chamber body 100 by the entire magnetic field adjusting mechanism 200 can be flexibly adjusted by adjusting the position of the magnetic member 220. The semiconductor chamber disclosed in the embodiments of the present application clearly enables the adjustment of the magnetic field applied to the chamber body 100 to be simple and convenient, compared to the related art in which the magnetic field is adjusted by removing or adding the number of magnetic members.
Referring again to fig. 1, the semiconductor chamber disclosed in the present embodiment further includes a magnetron assembly 300, a target assembly 400, a carrier pedestal 500, a dc power supply 600, and a bias power supply 700. In a specific operation, the dc power supply 600 is coupled to the target assembly 400, the load-bearing pedestal 500 is disposed in the chamber body 100, the load-bearing pedestal 500 is used to bear a workpiece to be processed, and the bias power supply 700 is coupled to the load-bearing pedestal 500. In a particular sputtering process, the magnetron assembly 300 ionizes the process gas within the chamber body 100 to form charged particles, which bombard the target assembly 400 and form target particles under the force of the electric field generated by the dc power supply 600. The target particles will move toward the direction close to the supporting base 500 under the action of the electric field of the bias power supply 700, and finally deposit on the workpiece to be processed on the supporting base 500, and finally form a deposition layer (i.e., a film), thereby meeting the process requirements.
In a specific implementation, the semiconductor chamber may further include a driving mechanism, and the driving mechanism may drive the magnetic member 220 to move, so as to switch the magnetic member 220 between the first position and the second position. The semiconductor chamber disclosed in the embodiment of the present application may further include a controller, and the controller may adaptively adjust the positions of the plurality of magnetic members 220 according to the power of the semiconductor chamber. Specifically, the controller may control the driving mechanism, and then the driving mechanism adjusts the position of the magnetic element 220, so as to adjust the magnetic field applied to the chamber body 100 by the magnetic field adjusting mechanism 200 according to the power of the semiconductor chamber. Control is well known in the art and is not described in detail.
As described above, the magnetic member 220 can move on the bracket 210, and then switch between the first position and the second position, and finally achieve the adjustment of the magnetic field.
In a specific implementation process, there are various ways to achieve the above object, please refer to fig. 3 and 4, and in an alternative scheme, a semiconductor chamber disclosed in this embodiment of the present application includes a driving mechanism, the driving mechanism may be disposed on the support 210 ', the driving mechanism is connected to the magnetic member 220 ', and the driving mechanism drives the magnetic member 220 ' to move. Specifically, the driving mechanism drives the magnetic member 220 'to move, so that the magnetic field generated by the magnetic member 220' can be located outside the chamber body 100 due to the magnetic member 220 'being away from the chamber body 100 when the magnetic member 220' is in the first position, as shown in fig. 3. Similarly, in the case that the driving mechanism drives the magnetic member 220 ' to move to the second position, the magnetic field generated by the magnetic member 220 ' can be at least partially located inside the chamber body 100 due to the proximity of the magnetic member 220 ' to the chamber body 100, as shown in fig. 4. It can be seen that the magnetic member 220 'is driven by the driving mechanism to move in a wide range, so as to change the magnetic field generated by the magnetic member 220' away from the chamber body 100 and outside the chamber body 100 or close to the chamber body 100 and inside the chamber body 100.
The driving mechanism can be a hydraulic telescopic piece, a pneumatic telescopic piece, a linear motor and the like, of course, the driving mechanism can also be of other structures, and the embodiment of the application does not limit the specific type of the driving mechanism.
Referring to fig. 5 and 6 again, in another specific embodiment, the rack 201 may include a first magnetic conductive member 211, a magnetic isolation member 212, and a second magnetic conductive member 213 that are sequentially connected, and specifically, the first magnetic conductive member 211, the magnetic isolation member 212, and the second magnetic conductive member 213 are disposed on the chamber body 100. Because the first magnetic conductive member 211 and the second magnetic conductive member 213 are both capable of conducting magnetic, the magnetic isolation member 212 is disposed between the first magnetic conductive member 211 and the second magnetic conductive member 213, so as to isolate the first magnetic conductive member 211 from the second magnetic conductive member 213, and finally prevent magnetic flux from being generated between the first magnetic conductive member 211 and the second magnetic conductive member 213.
Referring to fig. 6 again, when the magnetic member 202 is in the second position, the first magnetic conductive member 211, the magnetic isolation member 212 and the second magnetic conductive member 213 are all in contact with the magnetic member 202. In this case, the two magnetic poles of the magnetic member 202 are respectively in contact with the first magnetic conductive member 211 and the second magnetic conductive member 213, which finally means that the magnetic member 202, the first magnetic conductive member 211 and the second magnetic conductive member 213 form a larger-volume magnetic structure, and the larger-volume magnetic structure can form a magnetic field in a larger spatial range, so that at least a portion of the magnetic field is located in the chamber body 100.
Referring to fig. 5 again, when the magnetic member 202 is at the first position, the magnetic member 202 may be in contact with the magnetic separation member 212 and the magnetic member 202, and one of the first magnetic conductive member 211 and the second magnetic conductive member 213 is in contact with the magnetic member 202; alternatively, the magnetic member 202 is in contact with only one of the first magnetic conductive member 211 and the second magnetic conductive member 213. In this case, the magnetic member 202 is equivalent to form a magnetic structure with a smaller volume with the first magnetic conductive member 211 or the second magnetic conductive member 213. In the case where the magnetic member 202 is only in contact with the first magnetic conductive member 211, the magnetic structure with a smaller volume can form a magnetic field in a smaller spatial range, so that the magnetic field can be located outside the chamber body 100.
However, the present invention is not limited thereto, and the dimensions of the magnetic element 202, the first magnetic conducting element 211, the magnetic isolating element 212, and the second magnetic conducting element 213 in the first direction can be changed to flexibly adjust the contact relationship among the four elements, so as to adjust and control the first position and the second position of the magnetic element 202.
Through the magnetic conduction cooperation of first magnetic conduction piece 211 and second magnetic conduction piece 213 to can adjust the position in the magnetic field that magnetic part 202 produced, can make the regulation to magnetic field more convenient, need not to make magnetic part 202 remove great distance, not only can reduce actuating mechanism's energy consumption, but also be favorable to the miniaturization of support 201, make whole magnetic field adjustment mechanism 200's volume less, reduce its occupation space, make things convenient for its arrangement on chamber main part 100.
In the embodiments of the present application, the structure of the stent may be various. In an alternative, the support 201' may be a ring-shaped structure, as shown in fig. 7 to 16, disposed around the chamber body 100. Such an annular configuration may be advantageous as a basis for mounting the magnetic elements 202 ', and ultimately for positioning the plurality of magnetic elements 202' around the chamber body 100.
In a further technical solution, in the case that the bracket 201 'has a ring structure, the first magnetic conductive member 211' is a first magnetic conductive ring, the magnetic isolation member 212 'is a magnetic isolation ring, and the second magnetic conductive member 213' is a second magnetic conductive ring, as shown in fig. 7 to 16. The first magnetic conductive ring, the magnetism isolating ring and the second magnetic conductive ring may be coaxially disposed, and the plurality of magnetic members 202 'may be arranged along a circumferential direction of the bracket 201'. By adjusting the shapes of the magnetic isolation member 212 ', the first magnetic conduction member 211' and the second magnetic conduction member 213 ', the structure can form a ring-shaped structure which is beneficial to the installation of a plurality of magnetic members 202', and meanwhile, the matching of the first magnetic conduction member 211 ', the magnetic isolation member 212' and the second magnetic conduction member 213 'with the magnetic members 202' is not influenced.
There are various ways to achieve the arrangement of the plurality of magnetic members 220 around the chamber body 100. Referring to fig. 17, in an alternative scheme, the number of the brackets 201 ″ may be plural, a plurality of the brackets 201 ″ are disposed around the chamber body 100 at intervals, and each of the magnetic members 202 ″ is disposed on the brackets 201 one to one. This configuration, which also enables a plurality of magnetic members 202 "to be disposed around the chamber body 100 by reducing the volume of the rack 201" and by adjusting the layout of the rack 201 ", facilitates the flexibility of installation and also facilitates the replacement or maintenance of a single damaged rack 201" or magnetic member 202 ".
In a further technical solution, the first magnetic conductive member 211 ' is provided with a first groove 211a, as shown in fig. 10, the magnetic isolation member 212 ' is provided with a through hole 212a, as shown in fig. 12, the second magnetic conductive member 213 ' is provided with a second groove 213a, as shown in fig. 14, the first groove 211a, the through hole 212a and the second groove 213a are butted to form an inner cavity, as shown in fig. 8, 15 and 16, the magnetic member 202 ' can be slidably disposed in the inner cavity along a first direction, and the first direction is an axial direction of a circumference formed by the plurality of magnetic members 202 ' surrounding each other. In this case, the magnetic member 202 ' is disposed in the inner cavity, so that the bracket 201 ' can be protected, and the interference of the external environment on the movement of the magnetic member 202 ' can be better avoided. Of course, the bracket 201 'may be directly provided with an inner cavity, and is not limited to the inner cavity formed by the first magnetic conductive member 211', the second magnetic conductive member 213 ', and the magnetic isolation member 212'.
As described above, the magnetic member 202' is driven by the driving mechanism to switch between the first position and the second position. There are various drive mechanisms. In an alternative scheme, under the condition that the holder 201 ' forms the inner cavity, the first end surface of the holder 201 ' is provided with the first air hole 211b, as shown in fig. 10, the second end surface of the holder 201 ' is provided with the second air hole 213b, as shown in fig. 14, and both the first air hole 211b and the second air hole 213b are communicated with the inner cavity. Specifically, the first end surface of the bracket 201 'may be a surface of the first magnetic conductive member 211' facing away from the second magnetic conductive member 213 ', and the second end surface of the bracket 201' may be a surface of the second magnetic conductive member 213 'facing away from the first magnetic conductive member 211', as shown in fig. 8.
Under the condition that the first air hole 211b is inflated into the inner cavity and the second air hole 213b is deflated, the magnetic element 202' can move from the first position to the second position; in the case that the second air hole 213b is filled with air and the first air hole 211b is deflated, the magnetic member 202' can move from the second position to the first position.
In a specific operation process, the first air hole 211b may be communicated with an air source, air from the air source may enter the inner cavity through the first air hole 211b and act on the first side of the magnetic element 202 ', and finally the magnetic element 202' may move to the second position under the pushing of the air, in which process, the movement of the magnetic element 202 'may push the air in the inner cavity on the second side of the magnetic element 202' to be discharged from the second air hole 213 b.
Similarly, the second air hole 213b may be communicated with an air source, air from the air source may enter the inner cavity through the second air hole 213b and act on the second side of the magnetic member 202 ', and finally the magnetic member 202' can move to the first position under the pushing of the air, and in this process, the movement of the magnetic member 202 'can push the air in the inner cavity at the first side of the magnetic member 202' to be discharged from the first air hole 211 b.
The scheme is that the magnetic element 202 'is driven by gas to switch between the first position and the second position by changing the structure of the bracket 201'. Because the semiconductor cavity is provided with more air sources, the driving structure can more easily and fully utilize the existing air source structure of the semiconductor cavity to drive, thereby being beneficial to improving the utilization rate of the existing components of the semiconductor cavity, and simultaneously having smaller structural improvement on the semiconductor cavity and stronger practicability.
In order to facilitate individual control and achieve finer magnetic field control, in an alternative scheme, the number of the inner cavities may be multiple, and the plurality of magnetic members 202' may be disposed in the plurality of inner cavities in a one-to-one correspondence.
In the case that the gas drives the magnetic member 202 ' to move, the better the sealing performance of the inner cavity is, the more beneficial the gas is to drive the gas efficiently, and based on this, in an alternative scheme, the magnetic field adjusting mechanism 200 may further include a first sealing ring 230, as shown in fig. 8, the first sealing ring 230 is sleeved on the magnetic member 202 ', and the first sealing ring 230 is disposed between the magnetic member 202 ' and the inner wall of the inner cavity in a sealing manner. This structure is beneficial to the isolation of the two opposite sides of the magnetic element 202 ', so as to avoid the influence of the mutual air leakage on the driving of the magnetic element 202'.
In another alternative, a second sealing ring 240 may be disposed between the first end surface of the magnetic shielding member 212 'and the surface where the notch of the first groove 211a is located, as shown in fig. 8, and/or a third sealing ring 250 may be disposed between the second end surface of the magnetic shielding member 212' and the surface where the notch of the second groove 213a is located, as shown in fig. 8. The second sealing ring 240 and the third sealing ring 250 can improve the sealing performance between the abutting surfaces, thereby being beneficial to improving the isolation effect between the inner cavity and the external environment, avoiding the play of the assembly gap between the abutting surfaces in the gas driving process, and being also beneficial to improving the driving effect of the magnetic part 202'.
In a further aspect, when the magnetic member 202 'is in the first position, the magnetic member 202' is in limit contact with the bottom wall of the first groove 211 a. By the structure, in the process of driving the magnetic element 202 ', the bottom wall of the first groove 211a can limit the magnetic element 202 ', and the magnetic element 202 ' is prevented from moving excessively. That is, in this case, the first recess 211a not only can perform a stopper function, but also can perform a partial structure enclosing the inner cavity.
Similarly, when the magnetic member 202 'is in the second position, the magnetic member 202' is in limit contact with the bottom wall of the second groove 213 a. This structure enables the bottom wall of the second groove 213a to limit the magnetic element 202 ' during driving the magnetic element 202 ', thereby preventing the magnetic element 202 ' from moving excessively. That is, in this case, the second groove 213a not only can play a role of a stopper but also can play a role of a partial structure enclosing the inner cavity.
Of course, in the embodiment of the present application, the rack does not have to be provided with an inner cavity, please refer to fig. 5 again, in the semiconductor chamber illustrated in fig. 5, the magnetic member 202 is movably engaged with the rack 201, and at least a portion of the magnetic member 202 is disposed outside the rack 201.
Based on the semiconductor chamber, the application also provides a semiconductor device comprising the semiconductor chamber.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement or the like made within the spirit and principle of the present application shall be included in the scope of the claims of the present application.
Claims (12)
1. A semiconductor chamber comprising a chamber body (100) and a magnetic field adjustment mechanism (200), the magnetic field adjustment mechanism (200) comprising a support (210, 201 ', 201 ") and a plurality of magnetic pieces (220, 202', 202"), wherein:
the support (210, 201 ') is disposed outside the chamber body (100), the plurality of magnetic members (220, 202 ') are movably disposed on the support (210, 201 '), the plurality of magnetic members (220, 202 ') are disposed around the chamber body (100), each of the magnetic members (220, 202 ') is switchable between a first position and a second position,
with the magnetic member (220, 202 ', 202 ") in the first position, a magnetic field created by the magnetic member (220, 202', 202") is located outside the chamber body (100); with the magnetic member (220, 202 ', 202 ") in the second position, a magnetic field created by the magnetic member (220, 202', 202") is at least partially located within the chamber body (100).
2. The semiconductor chamber of claim 1, wherein the rack (210, 201 ', 201 ") comprises a first magnetic conductive member (211, 211'), a magnetic shield member (212, 212 '), and a second magnetic conductive member (213, 213') that are sequentially butted, wherein:
with the magnetic member (202) in the second position, the first magnetically permeable member (211), the magnetically isolating member (212), and the second magnetically permeable member (213) are all in contact with the magnetic member (202);
with the magnetic member (202) in the first position, the magnetism separator (212) is in contact with the magnetic member (202), and one of the first magnetism conductive member (211) and the second magnetism conductive member (213) is in contact with the magnetic member (202).
3. The semiconductor chamber according to claim 2, wherein the support (201 ') is a ring structure, the first magnetic conductive member (211') is a first magnetic conductive ring, the magnetic isolation member (212 ') is a magnetic isolation ring, the second magnetic conductive member (213') is a second magnetic conductive ring, the first magnetic conductive ring, the magnetic isolation ring and the second magnetic conductive ring are coaxially arranged, and the plurality of magnetic members (202 ') are arranged along a circumferential direction of the support (201').
4. The semiconductor chamber of claim 2, wherein the plurality of racks (201 ") is provided, the plurality of racks (201") being spaced around the chamber body (100), each of the magnetic members (202 ") being provided on the rack (201") in a one-to-one correspondence.
5. The semiconductor chamber according to any one of claims 2 to 4, wherein the first magnetic conductive member (211 ') defines a first groove (211a), the magnetic isolation member (212 ') defines a through hole (212a), the second magnetic conductive member (213 ') defines a second groove (213a), the first groove (211a), the through hole (212a), and the second groove (213a) are butted to form an inner cavity, the magnetic member (202 ') is slidably disposed in the inner cavity along a first direction, and the first direction is an axial direction of the plurality of magnetic members (202 ') around the formed circumference.
6. The semiconductor chamber according to claim 5, wherein a first end surface of the support (201 ') is provided with a first air hole (211b), a second end surface of the support (201') is provided with a second air hole (213b), and the first air hole (211b) and the second air hole (213b) are both communicated with the inner cavity;
said magnetic member (202') being movable from said first position to said second position in the event said first air vent (211b) is inflated into said cavity and said second air vent (213b) is deflated;
the magnetic member (202') is movable from the second position to the first position in case the second air hole (213b) is inflated into the cavity and the first air hole (211b) is deflated.
7. The semiconductor chamber of claim 5, wherein the inner cavity is a plurality of inner cavities, and a plurality of the magnetic members (202') are disposed in the plurality of inner cavities in a one-to-one correspondence.
8. The semiconductor chamber of claim 5, wherein the magnetic field adjusting mechanism (200) further comprises a first sealing ring (230), the first sealing ring (230) is sleeved on the magnetic member (220), and the first sealing ring (230) is sealingly arranged between the magnetic member (202') and the inner wall of the inner cavity.
9. The semiconductor chamber according to claim 5, wherein a second sealing ring (240) is provided between the first end surface of the magnetic shielding member (212 ') and the surface where the notch of the first groove (211a) is located, and/or a third sealing ring (250) is provided between the second end surface of the magnetic shielding member (212') and the surface where the notch of the second groove (213a) is located.
10. A semiconductor chamber according to claim 5, wherein in the first position the magnetic member (202') is in positive contact with a bottom wall of the first recess (211 a); and/or the presence of a gas in the gas,
in the second position, the magnetic element (202') is in limit contact with the bottom wall of the second recess (213 a).
11. The semiconductor chamber of claim 1, wherein a magnetron assembly (300) and a target assembly (400) are disposed on a top of the chamber body (100), wherein a load-bearing pedestal (500) is disposed in the chamber body (100), wherein the target assembly (400) is connected to a DC power supply (600), and wherein the load-bearing pedestal (500) is connected to a bias power supply (700).
12. A semiconductor device comprising a semiconductor chamber according to any one of claims 1 to 11.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110501887.2A CN113241313B (en) | 2021-05-08 | 2021-05-08 | Semiconductor chamber and semiconductor equipment |
| TW111115868A TWI836411B (en) | 2021-05-08 | 2022-04-26 | Semiconductor chamber and semiconductor device |
| PCT/CN2022/089228 WO2022237524A1 (en) | 2021-05-08 | 2022-04-26 | Semiconductor chamber and semiconductor device |
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| CN202110501887.2A CN113241313B (en) | 2021-05-08 | 2021-05-08 | Semiconductor chamber and semiconductor equipment |
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| CN113241313A CN113241313A (en) | 2021-08-10 |
| CN113241313B true CN113241313B (en) | 2022-09-16 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010248576A (en) * | 2009-04-16 | 2010-11-04 | Shinku Device:Kk | Magnetron sputtering apparatus |
| CN104928635A (en) * | 2014-03-21 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering chamber and magnetron sputtering equipment |
| CN109423616A (en) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | Adjustable magnet, deposition chambers and the method for changing Distribution of Magnetic Field in deposition chambers |
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| WO2020126531A1 (en) * | 2018-12-21 | 2020-06-25 | Oerlikon Surface Solutions Ag, Pfäffikon | Magnet arrangement for a plasma source for carrying out plasma treatments |
| US11842890B2 (en) * | 2019-08-16 | 2023-12-12 | Applied Materials, Inc. | Methods and apparatus for physical vapor deposition (PVD) dielectric deposition |
| CN113241313B (en) * | 2021-05-08 | 2022-09-16 | 北京北方华创微电子装备有限公司 | Semiconductor chamber and semiconductor equipment |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010248576A (en) * | 2009-04-16 | 2010-11-04 | Shinku Device:Kk | Magnetron sputtering apparatus |
| CN104928635A (en) * | 2014-03-21 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering chamber and magnetron sputtering equipment |
| CN109423616A (en) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | Adjustable magnet, deposition chambers and the method for changing Distribution of Magnetic Field in deposition chambers |
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| WO2022237524A1 (en) | 2022-11-17 |
| TWI836411B (en) | 2024-03-21 |
| CN113241313A (en) | 2021-08-10 |
| TW202244292A (en) | 2022-11-16 |
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