CN111996504A - Ferromagnetic target magnetron sputtering device - Google Patents
Ferromagnetic target magnetron sputtering device Download PDFInfo
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- CN111996504A CN111996504A CN202010661498.1A CN202010661498A CN111996504A CN 111996504 A CN111996504 A CN 111996504A CN 202010661498 A CN202010661498 A CN 202010661498A CN 111996504 A CN111996504 A CN 111996504A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 53
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 46
- 230000005291 magnetic effect Effects 0.000 claims abstract description 176
- 230000002093 peripheral effect Effects 0.000 claims abstract description 21
- 230000006698 induction Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000005293 ferrimagnetic effect Effects 0.000 claims description 3
- 239000013077 target material Substances 0.000 abstract description 42
- 238000004544 sputter deposition Methods 0.000 description 16
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 229910002555 FeNi Inorganic materials 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention discloses a ferromagnetic target magnetron sputtering device, which comprises: cathode base, peripheral permanent magnet, central permanent magnet are located the lower part of cathode base, and peripheral permanent magnet is located the central permanent magnet outside, still includes: the device comprises an annular magnetic target, a magnetic conduction ring, a high-temperature-resistant insulating outer ring, a high-temperature-resistant insulating inner ring and a magnetic conduction column; the annular magnetic target, the magnetic conduction ring, the high-temperature-resistant insulating outer ring, the high-temperature-resistant insulating inner ring and the magnetic conduction column are located above the cathode base, the magnetic conduction column is located in the middle of the cathode base, the annular magnetic target is located on the outer side of the magnetic conduction column, the high-temperature-resistant insulating outer ring is located between the annular magnetic target and the magnetic conduction ring, and the high-temperature-resistant insulating inner ring is located between the annular magnetic target and the magnetic conduction column. The invention changes the magnetic circuit in the prior art, ensures that the magnetic field distribution is uniform and reasonable, and solves the problem that the normal magnetron sputtering can not be realized due to the small surface magnetic field intensity caused by the high magnetic conductivity of the ferromagnetic target material.
Description
Technical Field
The invention belongs to the technical field of vacuum coating, and particularly relates to a ferromagnetic target magnetron sputtering device.
Background
The magnetron sputtering vacuum coating technology is one of the mainstream technologies of the current coating due to the advantages of high deposition rate, high power efficiency, high film-substrate binding force, compact film formation, small substrate temperature rise and the like. However, in the magnetron sputtering coating technology, due to the high magnetic permeability of the ferromagnetic material, most of the magnetic lines of force directly pass through the interior of the ferromagnetic material target, so that the magnetic field in the space above the target is seriously reduced, and the magnetron sputtering cannot be normally performed.
Many solutions to this problem are proposed, including: changing the magnetic conductivity of the target material, changing the structure of the target material, enhancing a cathode magnetic field source of magnetron sputtering, designing a new magnetron sputtering system or a new sputtering cathode device and the like; however, most methods have low practicability, poor universality and complexity.
Chinese patent 02116687.0 discloses a non-magnetic shielding ferromagnetic target sputtering cathode and a sputtering method thereof, and a new ferromagnetic target sputtering cathode is integrally designed. Although sputtering of a ferromagnetic target can be achieved, there are disadvantages such as a complicated cathode structure and poor versatility.
Chinese patent 200520051398.8 discloses a target structure of magnetron sputtering ferromagnetic material, which is divided into an inner target block, an outer target block and a lower backing target strip by changing the shape of the target, so that there is sufficient horizontal magnetic field component above the lower backing target strip. The high-thermal-conductivity back plate, the inner target block, the outer target block and the lower backing target strip are placed above the base, the processing relative to the target is complex, meanwhile, the high-magnetic-conductivity ferromagnetic target can still form certain magnetic shielding, and the magnetic induction intensity on the surface of the target can be ensured to be sufficient only by the fact that the high-performance magnet at the lower end of the base is large in size, so that the method is relatively complex.
Chinese patent 200510114068.3 discloses an enhanced magnetron sputtering target, wherein one or more magnets are embedded into the back of the sputtering target to increase the magnetic field on the surface of the target material, and only the distribution of the magnets inside the base is changed, but the magnetic shielding effect of the ferromagnetic target material on the upper end is not changed, so that the magnetic induction intensity on the surface of the target material can be ensured to be sufficient only if the required internal high-performance magnets have a larger volume or the ferromagnetic target material is very thin.
Other methods such as reducing the thickness of the target material and grooving have poor effect on the high-permeability material, and affect the efficiency and cost; the method for enhancing the cathode magnetic field source of magnetron sputtering is not common with the cathode magnetic field source for sputtering non-ferromagnetic target materials; the magnetic conductivity of the target material is reduced by a heat treatment method, the improvement degree is limited, and the effect is not obvious.
Fig. 1 is a schematic structural diagram of a magnet and a target in a planar magnetron sputtering apparatus in the prior art.
The planar magnetron sputtering device comprises: target 1, cathode base 2, peripheral permanent magnet 3, central permanent magnet 4. The target material 1 is positioned on the upper part of the cathode base 2, the peripheral permanent magnet 3 and the central permanent magnet 4 are positioned on the lower part of the cathode base 2, and the peripheral permanent magnet 3 is positioned on two sides of the central permanent magnet 4.
Fig. 2 shows a distribution diagram of magnetic lines of force on the surface of the target when the non-ferromagnetic target is sputtered by the planar magnetron sputtering apparatus in the prior art.
The distribution of magnetic lines of force formed by the peripheral permanent magnet 3 and the central permanent magnet 4 at the upper end of the common non-ferromagnetic target material is the state of the magnetron sputtering system in normal operation. When the magnetic induction intensity horizontal component B on the surface of the target material∥When the temperature is 0.02-0.10T, the motion trail of electrons can be effectively restrained, the plasma density is increased, and the sputtering efficiency is further improved. Meanwhile, the characteristics of the plasma and the etching track of ions to the target are influenced due to the distribution characteristics of the magnetic field. In the etched area 11 of the target material 1, the etched trace of the target material 1 is most obvious below the middle area with larger horizontal magnetic induction component.
When the magnetron sputtering system works, the target material 1 and the cathode base 2 are attached together and are used as a cathode, and a cooling device is arranged in the cathode base 2. Argon is filled in a sputtering chamber in which a target material is positioned, higher voltage is applied between an anode (generally positioned at the upper end of the target material and simultaneously provided with a plated workpiece) and a cathode, gas between the cathode and the anode is ionized due to the high voltage, positive ions accelerate to bombard the cathode target in an electric field, and target material atoms sputtered from the target material fly to the plated workpiece to be deposited into a film; the electrons continue to generate ionization collision with argon atoms to generate new positive ions and secondary electrons, and finally the electrons collide with the anode with higher energy under the action of an electric field. The peripheral permanent magnet 3 and the central permanent magnet 4 below the target material jointly form a magnetic field on the surface of the target material, the Lorentz force generated by the magnetic field on moving electrons can be utilized to restrict and prolong the moving track of the electrons in the electric field, the collision chance of the electrons and gas atoms is increased, the ionization rate of gas is improved, and the characteristic of magnetron sputtering high-speed deposition is realized.
As shown in fig. 3, the magnetic force line distribution of the surface of the target when the planar magnetron sputtering apparatus in the prior art sputters the ferromagnetic target.
It can be seen that due to the high magnetic permeability of the ferromagnetic target material, a large part of magnetic lines of force pass through the inside of the target material, and the magnetic induction intensity with large horizontal component on the surface of the original non-ferromagnetic target material is reduced in intensity and direction due to the influence of the ferromagnetic target material, and the horizontal component is reduced greatly, so that the effect of restraining and prolonging the movement track of electrons in an electric field cannot be achieved, and the magnetron sputtering system cannot work normally.
Disclosure of Invention
The invention aims to provide a ferromagnetic target magnetron sputtering device, which changes a magnetic circuit in the prior art, ensures that the magnetic field distribution is uniform and reasonable, and solves the problem that the ferromagnetic target cannot be normally magnetron sputtered due to high magnetic permeability.
Ferromagnetic target magnetron sputtering device includes: cathode base, peripheral permanent magnet, central permanent magnet are located the lower part of cathode base, and peripheral permanent magnet is located the central permanent magnet outside, still includes: the device comprises an annular magnetic target, a magnetic conduction ring, a high-temperature-resistant insulating outer ring, a high-temperature-resistant insulating inner ring and a magnetic conduction column; the annular magnetic target, the magnetic conduction ring, the high-temperature-resistant insulating outer ring, the high-temperature-resistant insulating inner ring and the magnetic conduction column are located above the cathode base, the magnetic conduction column is located in the middle of the cathode base, the annular magnetic target is located on the outer side of the magnetic conduction column, the high-temperature-resistant insulating outer ring is located between the annular magnetic target and the magnetic conduction ring, and the high-temperature-resistant insulating inner ring is located between the annular magnetic target and the magnetic conduction column.
Furthermore, the lower surfaces of the annular magnetic target material, the magnetic conduction ring and the magnetic conduction column are attached to the upper surface of the cathode base by the attraction generated by the magnet, and the annular magnetic target material is positioned in the center of the cathode base.
Further, the outer side wall and the inner side wall of the magnetic conduction ring are respectively superposed with the outer side wall and the inner side wall of the peripheral permanent magnet in the direction vertical to the surface of the cathode base; the magnetic conduction column is positioned in the center of the cathode base and is positioned right above the central permanent magnet.
Further, the outer side surface of the high-temperature-resistant insulating outer ring is attached to the inner side surface of the magnetic conduction ring, the inner side surface is attached to the outer side surface of the annular magnetic target, and the lower surface is attached to the upper surface of the cathode base; the outer side surface of the high-temperature-resistant insulating inner ring is attached to the inner side surface of the annular magnetic target, and the inner side surface is attached to the outer side surface of the magnetic conduction column.
Furthermore, the cathode base, the peripheral permanent magnet, the central permanent magnet, the annular magnetic target, the magnetic conduction ring, the high-temperature-resistant insulating outer ring, the high-temperature-resistant insulating inner ring and the magnetic conduction column are positioned in the shielding cover.
Furthermore, a fixed ring is arranged on the outer side of the annular magnetic target and connected to the cathode base.
Furthermore, the horizontal component of the magnetic induction intensity on the surface of the annular magnetic target is between 0.02 and 0.10T.
Furthermore, the materials of the magnetic conduction column, the magnetic conduction ring and the annular magnetic target material are the same.
Furthermore, the high-temperature resistant insulating inner ring and the high-temperature resistant insulating outer ring are made of non-magnetic, insulating and high-temperature resistant materials.
Further, the annular magnetic target is a ferromagnetic or ferrimagnetic target.
Compared with the prior art, the invention has the following advantages:
the invention changes the magnetic circuit of the prior art, ensures that the magnetic field distribution is uniform and reasonable, and solves the problem that the normal magnetron sputtering can not be carried out due to the high magnetic conductivity of the ferromagnetic target material. The method has the technical advantages of simplicity, practicability, good universality, low cost, higher target utilization rate, high sputtering efficiency and the like, can be improved on the existing magnetron sputtering equipment for sputtering non-ferromagnetic targets, and can also be directly used as the structure of the magnetron sputtering equipment for sputtering ferromagnetic and non-ferromagnetic targets.
1. The device can be transformed and used on a cathode device of common plane magnetron sputtering equipment (circular and rectangular), only additional parts such as a detachable magnetic conduction column, a magnetic conduction ring, a high-temperature-resistant insulating inner ring, a high-temperature-resistant insulating outer ring and the like are added, and the shape of the ferromagnetic target material is changed, so that the problem of difficulty in magnetron sputtering of the ferromagnetic target material can be solved, and the aim of sputtering the ferromagnetic target material is fulfilled; the device does not damage or change the cathode target device, can realize that ferromagnetic and non-ferromagnetic targets share one cathode device, and has the advantages of simplicity, convenient assembly and disassembly and strong universality.
2. Because the annular magnetic target is adopted, the horizontal component magnetic field in the space above the target meets the requirement of magnetron sputtering, the annular magnetic target is highly matched with an etched area, and the utilization rate of the target is improved.
3. Each component is adsorbed and fixed on the surface of the cathode target device by the magnetic field attraction generated by the permanent magnet, and ferromagnetic target materials can be used as a magnetic conduction ring and a magnetic conduction column, so that other sputtered impurities are not introduced, and the sputtering effect and the cleanness of the cavity are ensured.
Drawings
FIG. 1 is a schematic diagram of a magnet and a target in a planar magnetron sputtering apparatus according to the prior art;
FIG. 2 is a magnetic force line distribution diagram of the surface of a non-ferromagnetic target sputtered by a planar magnetron sputtering apparatus in the prior art;
FIG. 3 is a magnetic line distribution diagram of the surface of a ferromagnetic target sputtered by a planar magnetron sputtering apparatus in the prior art;
FIG. 4 is a schematic structural diagram of a magnetron sputtering apparatus for ferromagnetic targets according to the present invention.
FIG. 5 is a schematic diagram of the cathode structure of a DC circular planar magnetron sputtering system in an embodiment of the invention.
Detailed Description
The following description sufficiently illustrates specific embodiments of the invention to enable those skilled in the art to practice and reproduce it.
Device for sputtering ferromagnetic target material by using planar magnetron sputtering equipment
FIG. 4 is a schematic structural diagram of a magnetron sputtering apparatus for ferromagnetic targets according to the present invention.
The ferromagnetic target magnetron sputtering device is used for sputtering of a ferromagnetic target, and the structure comprises: the device comprises an annular magnetic target 12, a cathode base 2, a peripheral permanent magnet 3, a central permanent magnet 4, a magnetic conduction ring 5, a high-temperature-resistant insulating outer ring 6, a high-temperature-resistant insulating inner ring 7 and a magnetic conduction column 8.
The annular magnetic target 12 is located above the cathode base 2, the lower surface of the annular magnetic target is attached to the upper surface of the cathode base 2 by the attraction force generated by the magnet, the geometric centers of the annular magnetic target 12 and the cathode base 2 are coincident with each other in the direction perpendicular to the surface of the cathode base 2, and the size of the annular magnetic target 12 is determined by the actual magnetic field distribution. The horizontal component of the magnetic induction intensity on the surface of the annular magnetic target 12 is between 0.02 and 0.10T. The annular magnetic target 12 is a ferromagnetic or ferrimagnetic target.
The peripheral permanent magnet 3 and the central permanent magnet 4 are positioned at the lower part of the cathode base 2, and the peripheral permanent magnet 3 is positioned at the outer side of the central permanent magnet 4.
The magnetic conduction ring 5 is positioned above the cathode base 2, the lower surface of the magnetic conduction ring is attached to the upper surface of the cathode base 2 by virtue of the attraction generated by the magnet, and the geometric centers of the magnetic conduction ring 5 and the cathode base 2 are mutually superposed in the direction vertical to the surface of the cathode base; the magnetic conductive ring 5 is positioned on the inner side of the annular magnetic target 12, the outer side wall of the magnetic conductive ring 5 is overlapped with the outer side wall of the peripheral permanent magnet 3 in the direction vertical to the surface of the cathode base 2, the inner side wall of the magnetic conductive ring 5 is overlapped with the inner side wall of the peripheral permanent magnet 3 in the direction vertical to the surface of the cathode base 2, and the specific size of the magnetic conductive ring 5 is determined according to the actual magnetic field distribution condition. The material of the magnetic conductive ring 5 is generally the same as that of the annular magnetic target 12, and other materials with high magnetic permeability can be adopted if the requirement on the components of the sputtered film is not high.
The magnetic conduction column 8 is arranged above the cathode base 2 in the magnetron sputtering device, the lower surface of the magnetic conduction column is attached to the upper surface of the cathode base 2 by virtue of attraction generated by a magnet, the magnetic conduction column 8 is positioned at the center of the cathode base 2, and the geometric centers of the magnetic conduction column 8 and the cathode base 2 are superposed in a direction vertical to the surface of the cathode base 2; the magnetic conduction column 8 is positioned right above the central permanent magnet 4. The material of the magnetic conduction column 8 is the same as that of the annular magnetic target 12, and other materials with high magnetic permeability can be adopted if the requirement on the components of the sputtering film is not high.
The high-temperature resistant insulating outer ring 6 is positioned above the cathode base 2, and the high-temperature resistant insulating outer ring 6 is positioned between the annular magnetic target material 12 and the magnetic conductive ring 5. The outer side surface of the magnetic conductive ring is attached to the inner side surface of the magnetic conductive ring 5, the inner side surface of the magnetic conductive ring is attached to the outer side surface of the annular magnetic target 12, and the lower surface of the magnetic conductive ring is attached to the upper surface of the cathode base 2. The high-temperature resistant insulating outer ring 6 is made of high-temperature resistant, insulating and non-magnetic materials.
The high-temperature-resistant insulating inner ring 7 is arranged above the cathode base 2 and positioned between the annular magnetic target material 12 and the magnetic conduction column 8, the outer side surface of the high-temperature-resistant insulating inner ring is attached to the inner side surface of the annular magnetic target material 12, the inner side surface of the high-temperature-resistant insulating inner ring is attached to the outer side surface of the magnetic conduction column 8, and the lower surface of the high-temperature-resistant insulating inner ring is attached to the upper surface of the. The high-temperature-resistant insulating inner ring 7 is made of high-temperature-resistant, insulating and non-magnetic materials.
FIG. 5 is a schematic diagram of the cathode structure of the DC circular planar magnetron sputtering system according to the embodiment of the present invention.
The ferromagnetic target magnetron sputtering device is used in the cathode part of a direct-current circular plane magnetron sputtering system. The ferromagnetic target magnetron sputtering device is positioned in the shielding case 9.
The magnetic conductive ring 5 and the magnetic conductive column 8 are made of pure iron, and the shielding cover 9 is made of carbon steel and can conduct magnetism; the fixed ring 10 is positioned outside the annular magnetic target 12 and is adhered to the cathode base 2, and the fixed ring 10 plays a role in fixing the annular magnetic target 12 and is made of 304 stainless steel; the peripheral permanent magnet 3 is a ring formed by a plurality of permanent magnets which are arranged at intervals, the high-temperature-resistant insulating inner ring 7 and the high-temperature-resistant insulating outer ring 6 are ceramic rings, and the annular magnetic target material 12 is a FeGa/FeCo/FeNi alloy target material. The horizontal component of the magnetic induction intensity on the surface of the annular magnetic target material 12 is between 0.04 and 0.08T, and the magnetron sputtering of the ferromagnetic target material can be successfully carried out.
The terminology used herein is for the purpose of description and illustration, rather than of limitation. As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiments are not limited by any of the details of the foregoing description, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the meets and bounds of the claims, or equivalences of such meets and bounds are therefore intended to be embraced by the appended claims.
Claims (10)
1. A magnetron sputtering apparatus for ferromagnetic targets, comprising: cathode base, peripheral permanent magnet, central permanent magnet are located the lower part of cathode base, and peripheral permanent magnet is located the central permanent magnet outside, its characterized in that still includes: the device comprises an annular magnetic target, a magnetic conduction ring, a high-temperature-resistant insulating outer ring, a high-temperature-resistant insulating inner ring and a magnetic conduction column; the annular magnetic target, the magnetic conduction ring, the high-temperature-resistant insulating outer ring, the high-temperature-resistant insulating inner ring and the magnetic conduction column are located above the cathode base, the magnetic conduction column is located in the middle of the cathode base, the annular magnetic target is located on the outer side of the magnetic conduction column, the high-temperature-resistant insulating outer ring is located between the annular magnetic target and the magnetic conduction ring, and the high-temperature-resistant insulating inner ring is located between the annular magnetic target and the magnetic conduction column.
2. The magnetron sputtering apparatus according to claim 1, wherein the lower surfaces of the annular magnetic target, the magnetic conductive ring, and the magnetic conductive column are attached to the upper surface of the cathode base by an attractive force generated by the magnet, and the annular magnetic target is located at the center of the cathode base.
3. The magnetron sputtering apparatus according to claim 1, wherein the outer sidewall and the inner sidewall of the magnetic conductive ring are respectively overlapped with the outer sidewall and the inner sidewall of the peripheral permanent magnet in a direction perpendicular to the surface of the cathode base; the magnetic conduction column is positioned in the center of the cathode base and is positioned right above the central permanent magnet.
4. The magnetron sputtering device according to claim 1, wherein the outer side surface of the high temperature-resistant insulating outer ring is attached to the inner side surface of the magnetic conductive ring, the inner side surface is attached to the outer side surface of the annular magnetic target, and the lower surface is attached to the upper surface of the cathode base; the outer side surface of the high-temperature-resistant insulating inner ring is attached to the inner side surface of the annular magnetic target, and the inner side surface is attached to the outer side surface of the magnetic conduction column.
5. The magnetron sputtering apparatus according to claim 1, wherein the cathode base, the peripheral permanent magnet, the central permanent magnet, the annular magnetic target, the magnetic conductive ring, the high temperature-resistant insulating outer ring, the high temperature-resistant insulating inner ring, and the magnetic conductive column are disposed in the shield case.
6. The magnetron sputtering apparatus according to claim 5, wherein a fixing ring is disposed outside the annular magnetic target and is connected to the cathode base.
7. The magnetron sputtering apparatus according to claim 1, wherein the horizontal component of the magnetic induction on the surface of the annular magnetic target is between 0.02T and 0.10T.
8. The magnetron sputtering apparatus according to claim 1, wherein the magnetic conductive column, the magnetic conductive ring, and the annular magnetic target are made of the same material.
9. The magnetron sputtering apparatus for ferromagnetic targets as claimed in claim 1, wherein the inner ring and the outer ring are made of non-magnetic, insulating and high temperature resistant material.
10. The magnetron sputtering apparatus according to claim 1, wherein the annular magnetic target is a ferromagnetic or ferrimagnetic target.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010661498.1A CN111996504A (en) | 2020-07-10 | 2020-07-10 | Ferromagnetic target magnetron sputtering device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010661498.1A CN111996504A (en) | 2020-07-10 | 2020-07-10 | Ferromagnetic target magnetron sputtering device |
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| CN111996504A true CN111996504A (en) | 2020-11-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023111650A1 (en) * | 2021-12-16 | 2023-06-22 | Нако Текнолоджиз, Сиа | Target made of magnetic material for magnetron sputtering |
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|---|---|---|---|---|
| US4572776A (en) * | 1983-12-05 | 1986-02-25 | Leybold-Heraeus Gmbh | Magnetron cathode for sputtering ferromagnetic targets |
| JPH02194171A (en) * | 1989-01-20 | 1990-07-31 | Ulvac Corp | Magnetron sputtering source |
| US5685959A (en) * | 1996-10-25 | 1997-11-11 | Hmt Technology Corporation | Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media |
| US20040074771A1 (en) * | 2002-10-18 | 2004-04-22 | Fan Qi Hua | Rectangular magnetron sputtering cathode with high target utilization |
| CN1608306A (en) * | 2001-11-07 | 2005-04-20 | 德莫特·P·莫纳汉 | Magnetron sputtering device |
| CN101525737A (en) * | 2009-01-19 | 2009-09-09 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering target for filming previous metals |
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2020
- 2020-07-10 CN CN202010661498.1A patent/CN111996504A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4572776A (en) * | 1983-12-05 | 1986-02-25 | Leybold-Heraeus Gmbh | Magnetron cathode for sputtering ferromagnetic targets |
| JPH02194171A (en) * | 1989-01-20 | 1990-07-31 | Ulvac Corp | Magnetron sputtering source |
| US5685959A (en) * | 1996-10-25 | 1997-11-11 | Hmt Technology Corporation | Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media |
| CN1608306A (en) * | 2001-11-07 | 2005-04-20 | 德莫特·P·莫纳汉 | Magnetron sputtering device |
| US20040074771A1 (en) * | 2002-10-18 | 2004-04-22 | Fan Qi Hua | Rectangular magnetron sputtering cathode with high target utilization |
| CN101525737A (en) * | 2009-01-19 | 2009-09-09 | 中国电子科技集团公司第四十八研究所 | Magnetron sputtering target for filming previous metals |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023111650A1 (en) * | 2021-12-16 | 2023-06-22 | Нако Текнолоджиз, Сиа | Target made of magnetic material for magnetron sputtering |
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