JP2010156018A - Sputtering apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering apparatus which can form a precise thin film having required properties at a low temperature and/or a high speed, is small, is cheap, is simple, can be operated while saving energy, and is easily maintained. <P>SOLUTION: This sputtering apparatus includes: a pair of targets 2a and 2b arranged at a space so as to oppose to each other; a pair of electrode members 3a and 3b which support the respective targets; a pair of magnets 6a and 6b arranged at the backside of the electrode member so as to form a magnetic field space between the targets; a pair of shield members 8a and 8b having a pair of annular electrode washer parts 81a and 81b which project to the front center of the target; and a substrate arranged in an one side between the targets so as to face to the magnetic field space. Furthermore, an alternating voltage V<SB>1</SB>and an alternating voltage V<SB>2</SB>are applied between each target and each electrode washer part so as to satisfy the relation: V<SB>1</SB>+V<SB>2</SB>=0[V]. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus for producing a precision thin film incorporated in an electronic device / electric equipment.

  In recent years, the technological progress of electronic devices and electrical equipment has been remarkable, and it depends largely on sputtering technology that can produce a thin film that is particularly precise (ultra-thin, homogeneous, flat). Conventionally, in order to respond to further advances in the technology of these devices and equipment, in addition to the development of new materials, ultra-thinning of films, homogenization / flattening, enhanced adhesion, etc., further miniaturization of equipment・ Thin film fabrication sputtering technology that realizes micromachining is required, and thin film fabrication sputtering technology that meets the diversity of devices and equipment is also required.

  Conventionally, there are various types of known sputtering apparatuses. In the following, as a representative example, discharge characteristics or magnetic field characteristics will be given for apparatuses using a bipolar (diode type) sputtering method, a magnetron sputtering method, and an opposed target sputtering method. First, FIG. 8 illustrates a bipolar type (diode type) and a counter target type from the viewpoint of electrode arrangement. For example, in the bipolar sputtering apparatus shown in FIG. 8A, the anode 101 a behind the substrate 101 and the cathode 102 a for connecting and holding the target 102 are opposed to each other in the vacuum chamber 100, and the anode 101 a is connected by the DC power source 103. And a cathode 102a, a DC voltage is applied between the substrate 101 and the target 102 to generate plasma. Note that the substrate 101 may be electrically connected to the anode 101a for substrate bias, or may be on the side, and plasma is formed in either case.

  FIG. 8B shows the opposed target sputtering apparatus in a state in which illustration of excitation means (external excitation coil or built-in magnet) described later is omitted. In this apparatus, a target 105a connected / held to the cathode 104 and a target 105b connected / held to the cathode 106 are arranged to face each other across the space 107, and a substrate 116 is arranged on the side of the space 107, Furthermore, it is an apparatus of a type in which annular anode washers 104a and 106a are provided around the outer periphery of each of the targets 105a and 105b (see, for example, Patent Document 1). In this apparatus, a DC voltage is applied by the DC power supply 108 between the cathode 104 / target 105a, the cathode 106 / target 105b, and the anode washers 104a, 106a. In Patent Document 1, the cathodes 104 and 106 are configured in a cylindrical shape, and the anode washers 104a and 106a are configured in a cylindrical shape so as to surround the cathodes 104 and 106 and the targets 105a and 105b from the outside. An external excitation coil is provided.

  Next, FIG. 9 shows a sputtering apparatus in which an exciting coil is disposed outside the cathode as an exciting means. 9A shows a sputtering apparatus having a schematic configuration, in the bipolar sputtering apparatus shown in FIG. 8A, the lateral excitation is performed by applying a magnetic field to the space between the substrate 101 and the target 102 laterally. This is a device provided with a coil 109. Further, the sputtering apparatus having a schematic configuration shown in FIG. 9 (b) is the same as the apparatus shown in FIG. 8 (b) in which the excitation means is omitted, but a magnetic field is laterally formed in the space between the target 105a and the target 105b. Is an opposed target type sputtering apparatus provided with an external excitation coil 109 for applying.

Next, FIG. 10 shows a sputtering apparatus in which a magnet is disposed inside the cathode (inside: opposite to the target surface) as an excitation means. A sputtering apparatus having a schematic configuration shown in FIG. 10A is the same as the bipolar sputtering apparatus shown in FIG. 8A, but includes a permanent magnet 110 for applying a magnetic field to the space between the substrate 101 and the target 102. This is an apparatus having a configuration arranged on the back side of the target 102. That is, the apparatus shown in FIG. 10A is an apparatus using a so-called magnetron sputtering method (magnetron type sputtering apparatus). Further, the sputtering apparatus having a schematic configuration shown in FIG. 10 (b) applies a magnetic field to the space between the target 105a and the target 105b in the apparatus shown in FIG. 8 (b) with the excitation means omitted. Is a counter target type sputtering apparatus having a configuration in which the permanent magnet 110 is disposed on the back side of the targets 105a and 105b.
Japanese Examined Patent Publication No. 62-14633

However, when a bipolar (diode-type) sputtering method is used (a bipolar sputtering apparatus that does not use a magnet: see FIG. 8A), the deposition rate is slow and high energy particles collide with the substrate. The film surface is damaged, the substrate temperature is increased, and the applied voltage and the atmospheric gas pressure are required to be high. In contrast to the bipolar sputtering apparatus that does not use this magnet, in the sputtering apparatus that uses the external excitation coil 109 as shown in FIG. 9 (a), the film forming speed is increased up to about 10 times. More energetic particles collide with the substrate than in the polar sputtering system, causing excessive film surface damage and substrate temperature rise. In addition, a large DC power supply and excitation coil are installed to cool the exciting coil that generates heat strongly. There is a need. Furthermore, in an apparatus using a magnetron sputtering method (magnetron type sputtering apparatus: see FIG. 10 (a)), a low deposition rate, a high applied voltage and an atmospheric gas pressure, which are problems of a bipolar sputtering apparatus that does not use a magnet. Although the problem of (about 10 ⁻³ Torr) can be solved, there is a disadvantage that sputtering for forming a ferromagnetic material at a low temperature and / or high speed is difficult and the utilization efficiency of the target is low.

Further, when the counter target type sputtering method is used, the counter target type sputtering apparatus (see FIG. 9B) provided with the external excitation coil 109 has an atmospheric gas pressure as low as about 10 ⁻⁴ Torr and a low temperature. However, the magnetic field distribution formed in the plasma confinement space between the opposing targets is too uniform. That is, in the plasma confinement space, the magnetic field distribution is not relatively stronger at the boundary than at the center. Therefore, plasma confinement at the boundary of the plasma confinement space is weak, and plasma particles easily escape to the side (outside of the plasma confinement space) at the boundary. Becomes excessive compared with the peripheral portion. Further, this sputtering apparatus (see FIG. 9B) has a problem that the temperature inside the vacuum chamber is increased, and further, there is a problem that the use efficiency of the target is insufficient. In addition, it is necessary to cool the external excitation coil 109 strongly like the apparatus shown to Fig.9 (a).

  On the other hand, even if the counter target type sputtering method is used, in the apparatus shown in FIG. 10B, that is, in the counter target type sputtering apparatus in which the permanent magnet 110 is disposed inside the cathodes 104 and 106, FIG. Compared with the apparatus shown in (b), a large DC power source for driving the external excitation coil 109 is not required, and furthermore, in the plasma confined space, the magnetic field distribution is relatively stronger at the boundary than at the center. The magnetic field distribution on the front surface of the target is ideal. Further, the gas pressure can be further reduced as compared with the apparatus shown in FIG. For example, even if supply of atmospheric gas is stopped, there is an advantage that sputtering (self-sputtering) due to a phenomenon in which atoms knocked out from one target surface ionize and collide with the other target is possible. However, in the structure in which the permanent magnet 110 is simply disposed inside the cathodes 104 and 106, the magnetic flux formed by the permanent magnet 110 is likely to leak. This magnetic flux leakage causes a region where the magnetic field is insufficient in the plasma space, so that the quality is insufficient even if the plasma is stably controlled for high quality film formation. In addition, this sputtering apparatus (see FIG. 10B) has a problem such as a temperature rise of the permanent magnet 110 disposed inside the cathodes 104 and 106. In this sputtering apparatus, if a strong permanent magnet is simply used so that the magnetic field for plasma confinement is strong and magnetic flux leakage does not occur, water cooling is preferable in order to efficiently cool such a magnet. There are the following problems.

  In the conventional sputtering apparatus, in order to cool the high-temperature components such as the substrate, the target, and the magnet, a water-cooling method is adopted in which cooling water is circulated through the necessary portions to cool. In this water-cooling method, scales adhere to the flow path of the cooling water or to the magnets and electrode plates, causing various problems. For example, various problems such as water leakage or water stoppage due to clogging of the distribution path due to adhesion or accumulation of scale, temperature rise due to breakage of components due to insufficient cooling, or magnetic force drop due to magnet temperature rise due to heat insulation of the adhesion film on the magnet Occurs. For this reason, maintenance work such as periodic inspection and maintenance of the cooling water flow and maintenance costs are required, and a cooling water circulation facility is required, which increases the size and cost of the device. Yes. In addition, the cost of water supply construction and water usage fees are also large.

Furthermore, the conventional sputtering apparatus is not limited to the bipolar sputtering method, the magnetron sputtering method, and the opposed target sputtering method, and a DC power source for applying a voltage between the anode and the target / cathode is a commercial AC power source (AC100). Or 200 [V], 50 or 60 [Hz]) is not easily obtained via a power supply device, and a complicated circuit configuration as shown in FIG. 11 is required. In other words, the voltage of the leftmost commercial AC power source in FIG. 11 is boosted to 500 to 2000 [V] by a transformer (booster) as the first stage, and the rectifier and smoothing C (capacitor) at the second stage. Circuit) to a direct voltage (DC). Of these, the first-stage device is small and inexpensive, but the second-stage device is relatively large and expensive, and a large amount of charge is accumulated in the smoothing C. Therefore, the sputtering apparatus and the overall apparatus configuration for operating the apparatus tend to be large and expensive, and the maintenance thereof is not easy, and the energy consumption is large.
When a high frequency power supply is used instead of DC (direct current voltage), the direct current voltage (DC) generated up to the second stage in FIG. Adjust to 13.56 [MHz]. The high-frequency power source (RF) thus obtained is input to the sputtering apparatus through a matching unit that performs impedance matching with the sputtering apparatus that is an RF load. When the high-frequency power source is used in this way, in addition to the problem that occurs in the case of DC, the RF generated by the third-stage oscillator causes noise in the instrument surrounding the oscillator, which hinders measurement. Furthermore, the fourth stage matching unit needs to be adjusted for each sputtering apparatus or for each target.

  As described above, the conventional sputtering apparatus has the above-described various problems, and is a large-scale and expensive apparatus for forming a precise thin film having required characteristics at low temperature and / or high speed. The operation also requires complicated operations, which is disadvantageous from the viewpoint of energy consumption and maintenance. Moreover, the conventional sputtering apparatus attaches importance to productivity, which can be applied only when mass-producing the same thing easily and in large numbers. Therefore, it is difficult or impossible for the conventional sputtering apparatus to flexibly respond to the demands that will occur with future miniaturization and diversity of devices.

  Therefore, the object of the present invention is to solve the above-mentioned various problems, and to form a precise thin film having the required characteristics at low temperature and / or high speed, as well as being small and inexpensive, and capable of simple and energy-saving operation. An object of the present invention is to provide a sputtering apparatus that is easy to maintain.

  In addition, another object of the present invention is to solve various problems caused by adhesion of scales generated in the flow path of cooling water in the water cooling system, and to exhibit the required performance by cooling the constituent members with a simple configuration. Another object of the present invention is to provide a sputtering apparatus that can be easily maintained and can be reduced in size, cost, and operating cost.

  The present inventor has intensively studied to overcome the above-mentioned problems. As a result, as a result of investigating the lighting electric circuit of the fluorescent lamp, focusing on the discharge mode and the spatter phenomenon of the electrode filament in the operation principle, the secondary side high voltage of the transformer provided between the pair of targets By connecting each target to both ends of the coil and alternately applying AC voltages having opposite polarities to each of the pair of targets, high-density plasma is completely ionized between the pair of targets. It has been found that a flat and uniform thin film can be formed stably in a state. As a result, it has been found that low-speed and high-speed sputtering can be performed with small size, low cost, simple, energy-saving operation and easy maintenance. Further, it has been found that various problems in the water cooling system can be overcome by cooling each constituent member such as a target that requires cooling by an air cooling system.

Therefore, in order to solve the above-described problem, the sputtering apparatus according to the first aspect of the present invention includes a first target and a second target, and a first target and a second target, which are arranged to face each other at intervals. First and second electrode members to be connected and supported, and respective back sides of the first electrode member and the second electrode member to form a magnetic field space between the first target and the second target And a pair of magnets arranged on the surface and a peripheral wall portion surrounding the side surfaces of the first electrode member and the second electrode member and projecting toward the front center of the first target and the second target The first shield member and the second shield member having the annular first electrode washer portion and the second electrode washer portion, the first target and the second target Laterally between, comprising a holder for providing a substrate which is disposed facing the magnetic field space, the AC voltage V ₁ applied between the first target the first electrode washer portion, said second target And the AC voltage V ₂ applied between the second electrode washer section and V ₁ + V ₂ = 0 [V].

In this sputtering apparatus, an alternating voltage V ₁ applied between the first electrode member and the first electrode washer part, and an alternating voltage V ₂ applied between the second electrode member and the second electrode washer part, By setting V ₁ + V ₂ = 0 [V], the first target supported by the first electrode member and the second electrode member without the need for a series of additional devices such as a booster, a rectifier, and a matching device, and By applying an alternating voltage of positive and negative polarity to the second target directly, high density plasma is stably formed between the targets in a completely ionized state, and a flat and uniform thin film can be formed. In particular, a flat and uniform thin film can be formed even with an insulating compound or a polymer material.

  Moreover, the invention which concerns on Claim 2 is provided with the transformer for applying an alternating voltage between the said 1st target and the said 2nd target in the said sputtering device, The secondary side high voltage coil of the said transformer Each of the first electrode member and the second electrode member is connected to both ends, and a neutral point of the secondary high-voltage coil is grounded, and the first shield member and the second shield member are connected to the neutral point. It is characterized by being connected to a point.

  In this sputtering apparatus, the first electrode member and the second electrode member are connected to both ends of the secondary side high voltage coil of the transformer, the neutral point of the secondary side high voltage coil is grounded, and the first shield By connecting the member and the second shield member to the neutral point, the first target and the second target are exchanged with positive and negative polarities without requiring a series of additional devices such as a booster, a rectifier, and a matching unit. By applying a voltage directly, high-density plasma is stably formed between the targets in a completely ionized state, and a flat and uniform thin film can be formed. In particular, a flat and uniform thin film can be formed even with an insulating compound or a polymer material.

  The invention according to claim 3 is characterized in that in the sputtering apparatus, a bias voltage at which the substrate side has a negative potential is applied between the substrate and the first electrode member or the second electrode member. To do.

  In this sputtering apparatus, by applying a bias voltage with a negative potential on the substrate side between the substrate and the first electrode member or the second electrode member, the uniformity and flatness of nano-sized particles and thin films, Crystallinity can be controlled and adjusted to an appropriate range.

  The invention according to claim 4 is characterized in that in the sputtering apparatus, the magnet has a yoke extending from each magnet toward the back side of the first target or the second target.

  In this sputtering apparatus, the internal space of the first electrode member or the second electrode member from the pair of magnets is provided by having a yoke extending from each magnet toward the back side of the first target or the second target. The leakage of the magnetic field lines to 10% can be reduced to 10% or less. The yoke is more preferably a funnel-shaped funnel yoke.

  The invention according to claim 5 is characterized in that, in the sputtering apparatus, the yoke is formed of directional silicon steel.

  In this sputtering apparatus, the funnel-shaped yoke is preferably formed of the same directional silicon steel (3.5% Si—Fe) as the magnetic core material of the AC transformer.

  The invention according to claim 6 is the sputtering apparatus, wherein the first electrode member and the second electrode member, and the first shield member and the second shield member are made of Cu (high purity copper). It is characterized by that.

  In this sputtering apparatus, the first electrode member and the second electrode member, and the first shield member and the second shield member are made of Cu, which is a material that is diamagnetic and has high thermal conductivity, electrical conductivity, and thermal radiation rate. As a result, the magnetic flux passing through these members can be reduced, and a large heat dissipation effect and equipotential (local discharge prevention) effect can be obtained.

  According to a seventh aspect of the present invention, in the sputtering apparatus, the first electrode member and the second electrode member, and the first shield member and the second shield member are connected via an insulating member made of polyimide. It is characterized by.

  In this sputtering apparatus, the heat-resistant temperature is higher than that of Teflon (registered trademark) of 200 ° C., which is 450 ° C., and the dielectric strength and tracking withstand voltage are also high. By adopting an insulating member as a new material, by connecting the first electrode member and the second electrode member, and the first shield member and the second shield member, there is no void discharge or destruction between both members. While insulating, the leakage of the air from between both members and the leakage of the member decomposition gas can be blocked.

  According to an eighth aspect of the present invention, in the sputtering apparatus, the first electrode washer and the second electrode washer are separated from the magnetic field space at an angle in a range of 43 to 47 degrees with 45 degrees as a center. Or it has a taper part formed so that a diameter may be expanded toward the said 2nd target, It is characterized by the above-mentioned.

  In this sputtering apparatus, the first electrode washer portion and the second electrode washer portion are expanded in diameter from the magnetic field space toward the first target or the second target at an angle in a range of 43 to 47 degrees around 45 degrees. By having the tapered portion formed in such a manner, it is possible to prevent an abnormal short-circuit discharge between the inside of the first electrode washer portion and the second electrode washer portion and the surface side edge of the target.

  The sputtering apparatus of the invention according to claim 9 is the sputtering apparatus, wherein the first electrode member and the second electrode member have a cooling air circulation space therein, and the cooling air circulation space is provided with a cooling atmosphere. An air introduction pipe to be introduced and a hot air exhaust pipe for exhausting the heated atmosphere are inserted.

  In this sputtering apparatus, cooling air is introduced into the cooling air circulation space through the air introduction pipe inserted in the cooling air circulation space of the first electrode member and the second electrode member, and the target, magnet, etc. are air-cooled, By exhausting the heated and heated atmosphere by cooling with a hot air exhaust pipe, troubles such as generation of water scale, water leakage and water shutoff in the water cooling system can be avoided.

  The invention according to claim 10 is characterized in that, in the sputtering apparatus, a heat radiation / exhaust hole through which residual gas in the gap can flow out is formed in the side walls of the first shield member and the second shield member. To do.

  In this sputtering apparatus, the residual gas in the gap between the side wall portion of the electrode member and the shield member is exhausted through the heat radiating / exhausting holes formed in the side walls of the first shield member and the second shield member, and the target, magnet It is possible to eliminate the heat generated by the like.

  The sputtering apparatus of the present invention directly applies an AC voltage to the pair of targets without applying a series of additional devices such as a booster, a rectifier, and a matching device. The generated plasma can be stabilized with high density, and a flat and uniform thin film can be formed. Therefore, the sputtering apparatus of the present invention can form a film at a low temperature or high temperature in a compact, inexpensive, simple and energy saving operation and easy maintenance.

  In addition, the sputtering apparatus of the present invention can avoid various troubles caused by adhesion of scales generated in the flow path of the cooling water in the water cooling method, and can exhibit the required performance by cooling the constituent members by the air cooling method. In addition, maintenance is easy, and the size and cost of the apparatus can be reduced, and the operating cost can be reduced. Furthermore, when installing the device, waterworks and water usage fees are not required.

  Hereinafter, the sputtering apparatus of the present invention will be described in detail based on the sputtering apparatus 1 according to the embodiment of the present invention shown in FIG. FIG. 1 is a schematic cross-sectional view showing the configuration of an electrode, a target, a substrate and the like provided in a vacuum chamber (not shown). FIG. 1 is a diagram in which equipment such as a vacuum tank constituting the sputtering apparatus and a vacuum pump for reducing the pressure in the vacuum tank are omitted.

  A sputtering apparatus 1 shown in FIG. 1 includes a pair of first target 2a and second target 2b arranged opposite to each other, and a first electrode member 3a and a second electrode for connecting and supporting the first target 2a and the second target 2b, respectively. Member 3b, magnets 6a and 6b disposed at the inner corners of cooling air circulation spaces 4a and 4b provided inside first electrode member 3a and second electrode member 3b, first target 2a and second A substrate 7 disposed between the targets 2b, and a first shield member 8a disposed so as to surround the first electrode member 3a, the second electrode member 3b, the first target 2a, and the second target 2b; A second shield member 8b and a transformer 9 for applying an AC voltage between the first target 2a and the second target 2b are provided. In the sputtering apparatus 1, the first electrode member 3a, the second electrode member 3b, the magnets 6a and 6b, the first shield member 8a, and the second shield member 8b basically have a cylindrical shape.

  The first target 2a and the second target 2b are attached to target connection / support plates 31a and 31b for connecting and supporting the target of the first electrode member 3a and the second electrode member 3b, and a vacuum chamber (not shown). 2) are arranged in parallel with each other at an appropriate interval. A magnetic field space A is formed by the magnets 6a and 6b in the space between the first target 2a and the second target 2b. The plasma is confined in the magnetic field space A.

  The first electrode member 3a and the second electrode member 3b are provided on the side of the target connection / support flat plates 31a and 31b and the target connection / support flat plates 31a and 31b for supporting the first target 2a and the second target 2b. It is a hollow cylindrical member having side wall portions 32a and 32b. Cooling air circulation spaces 4a and 4b are provided in the interior surrounded by the target connection / support flat plates 31a and 31b and the side walls 32a and 32b of the first electrode member 3a and the second electrode member 3b. Air introducing pipes 33a and 33b for introducing cooling air are inserted into the cooling air circulation spaces 4a and 4b. And the 1st electrode member 3a and the 2nd electrode member 3b are hot air exhaust for the cooling air introduced into the cooling air circulation space 4a, 4b through the air introduction pipes 33a, 33b as hot air and discharged. It has tubes 10a and 10b.

  In the sputtering apparatus shown in FIG. 1, the air introduction pipes 33a and 33b introduce the cooling air into the cooling air circulation spaces 4a and 4b of the first electrode member 3a and the second electrode member 3b, respectively. 2 This is for air-cooling the target 2b, the magnets 6a, 6b and the like. The cooling air introduced from the air introduction pipes 33a and 33b is cooled to a predetermined temperature via a cooling mechanism (not shown). Moreover, the hot air exhaust pipes 10a and 10b have air discharge ports 11a and 11b from the cooling air circulation spaces 4a and 4b, and air intake ports 12a and 12b opened inside. In this case, the air inlets 12a and 12b are arranged close to the target connection / support flat plates 31a and 31b, respectively, and open to positions serving as heat sources (centers of the target connection / support flat plates 31a and 31b). It is set to be.

  In the sputtering apparatus 1 shown in FIG. 1, an air feed pump (not shown) is connected to the air inlets of the air inlet pipes 33a and 33b, or an intake pump (not shown) is connected to the air outlets 11a and 11b. The cooling air may be forced to flow through the cooling air circulation spaces 4a and 4b to cool the first target 2a, the second target 2b, the magnets 6a and 6b, and the like.

  Thus, the 1st target 2a, the 2nd target 2b, the 1st electrode member 3a, the 2nd electrode member by the cooling air introduced into the cooling air circulation space 4a, 4b through the air introduction pipes 33a, 33b 3b, by air cooling the magnets 6a, 6b, etc., a problem that has conventionally occurred in the water cooling mechanism for cooling the first target 2a, the second target 2b, the magnets 6a, 6b, etc. For example, it is possible to avoid problems such as water scale adhering to the flow path of the cooling water, clogging, causing water leakage or water breakage, and insufficient cooling of the target, electrode members, magnets, and the like.

  The magnets 6a and 6b are arranged at the inner corners of the cooling air circulation spaces 4a and 4b provided in the first electrode member 3a and the second electrode member 3b on the back side of the first target 2a and the second target 2b. Has been. The magnets 6a and 6b are cylindrical magnets arranged along the inner peripheral surfaces of the first electrode member 3a and the second electrode member 3b. The magnet 6a and the magnet 6b are disposed to face each other with the first electrode member 3a, the second electrode member 3b, the first target 2a, and the second target 2b interposed therebetween, and the end portion 62a on the first target 2a side of the facing magnet 6a. One of the end portions 62b on the second target 2b side of the magnet 6b is configured as an N pole and the other as an S pole. In FIG. 1, the end 62a on the first target 2a side of the magnet 6a is an N pole, and the end 62b on the second target 2b side of the magnet 6b is an S pole. A magnetic field A is formed between the first target 2a and the second target 2b by the magnets 6a and 6b. In these magnets 6a and 6b, all the magnetic flux emitted from the N pole (end portion 62a) of the magnet 6a passes through the magnetic field space A and enters the S pole (end portion 62b) of the opposing magnet 6b. Ideal.

  Further, funnel-shaped yokes 63a and 63b are extended from the magnets 6a and 6b toward the back surfaces of the first target 2a and the second target 2b, respectively. Here, each of the funnel-shaped yokes 63a and 63b is arranged with a reduced diameter portion protruding from the rear part of the casing of the first electrode member 3a or the second electrode member 3b, and supports the hot air exhaust pipes 10a and 10b. It is formed into a shape. The funnel-shaped yokes 63a and 63b can reduce magnetic flux leakage from the magnets 6a and 6b to the internal spaces (cooling air circulation spaces 4a and 4b) of the first electrode member 3a and the second electrode member 3b. . The funnel-shaped yokes 63a and 63b preferably have a large saturation magnetization, a low coercive force, and a strong uniaxial anisotropy. From this point of view, directional silicon steel (3.5% Si—Fe) is preferably used as a magnetic field. It is preferably composed of a soft magnetic material that has been heat-treated.

  The first shield member 8a and the second shield member 8b are arranged such that the first electrode member 3a, the side surfaces of the first electrode member 3a and the second electrode member 3b and the side edges of the first target 2a and the second target 2b are surrounded. This is a hollow cylindrical member having a peripheral wall portion 80 provided around the outside of the second electrode member 3b. The first shield member 8a and the second shield member 8b are annular first electrode washers that protrude from the end portions 80a and 80b of the peripheral wall 80 toward the front center of the first target 2a and the second target 2b. Part 81a and second electrode washer part 81b.

  As shown in FIG. 2, the first electrode washer portion 81a and the second electrode washer portion 81b are formed from the first target 2a and the second target 2b from the magnetic field space A at an angle in the range of 43 to 47 degrees with 45 degrees as the center. It is preferable to have the taper part 82 formed so that it may expand toward each. By providing the taper portion 82, an abnormal short-circuit discharge (spark) is generated between the lower end of the inner edge of the first electrode washer portion 81a and the second electrode washer portion 81b and the side edge 21 of the first target 2a and the second target 2b. Can be prevented.

  The first shield member 8a and the second shield member 8b, and the first electrode member 3a and the second electrode member 3b have high thermal conductivity, high radiation rate and high electrical conductivity, and have corrosion resistance and workability. In this respect, it is preferably composed of high purity Cu of 4N (99.99%) or more. By configuring the first shield member 8a, the second shield member 8b, and the first electrode member 3a, the second electrode member 3b with Cu, which is a material having high diamagnetism, thermal conductivity, and emissivity, these can be used. This is effective because the magnetic flux passing through the member can be reduced and a large heat dissipation effect can be obtained.

  The first electrode member 3a and the second electrode member 3b are preferably connected to the first shield member 8a and the second shield member 8b via an insulating member 13 made of polyimide having excellent heat resistance. The insulating member 13 electrically and completely insulates the first electrode member 3a and the second electrode member 3b from the first shield member 8a and the second shield member 8b. By blocking, voltage resistance, tracking resistance, corrosion resistance, heat resistance and water (humidity) resistance can be improved. The tracking is a phenomenon in which a weak current flows on the surface of the insulator to cause the insulator to carbonize and generate heat. Tracking resistance refers to the surface of the insulating member 13 laminated on the electrode member or shield member. This means that tracking does not occur even if a weak current flows.

  Furthermore, it is preferable that the peripheral wall 80 of the first shield member 8a and the second shield member 8b is provided with heat radiation / exhaust holes 85 as shown in FIGS. 3 (a) and 3 (b). With this heat radiation / exhaust hole 85, the heat generated by the first target 2a, the second target 2b, the magnets 6a, 6b, etc. can be efficiently exhausted. The part where the heat radiating / exhaust hole 85 is formed, the hole diameter, the number of holes, the distribution form of the heat radiating / exhaust hole 85, etc. It can be determined appropriately according to the dimensions and the like. For example, the hole diameter of the heat dissipation / exhaust hole 85 is set such that the width d of the gap 14 between the inner surfaces of the first shield member 8a and the second shield member 8b and the outer surfaces of the first electrode member 3a and the second electrode member 3b (FIG. 3). It is preferably smaller than (see (b)) and larger than the wall thickness t (see FIG. 3 (b)) of the first shield member 8a and the second shield member 8b.

  Further, the heat radiation / exhaust hole 85 has the number of holes on the side close to the first target 2a and the second target 2b of the peripheral wall portion 80 of the first shield member 8a and the second shield member 8b and on the side close to the insulating member 13. It is preferable to increase the number. Further, the heat dissipation / exhaust holes 85 provided on the insulating member 13 side of the first shield members 8a and 8b are the inner surfaces of the first shield member 8a and the second shield member 8b, and the first electrode member 3a and the second electrode member 3b. This is effective for exhausting the residual gas that remains in the gap 14 between the outer surfaces of the gas and hardly exhausts, thereby reducing the pressure of the residual gas and completely preventing sparks.

  The transformer 9 is for applying an AC voltage between the first target 2a and the second target 2b. Each of the first target 2a and the second target 2b is connected to both ends of the secondary side coil 9b of the transformer 9 via wires 15a and 15b. Moreover, the 1st shield member 8a and the 2nd shield member 8b are connected to the neutral point M of the secondary side coil 9b of the transformer 9 via wiring 16a, 16b. Further, the neutral point M is grounded.

In the sputtering apparatus 1, by connecting as described above, the first electrode washer portion 81a of the first shield member 8a connected to the grounded neutral point M and the second of the second shield member 8b. The potential of the electrode washer portion 81b is 0 [V]. Therefore, the plasma potential (Vp) in the space (magnetic field space A) between the first electrode washer portion 81a and the second electrode washer portion 81b is 0 [V]. On the other hand, each of the 1st electrode member 3a and the 2nd electrode member 3b is connected to the both ends of the secondary side coil 9b of the transformer 9 via wiring 15a, 15b. Therefore, the AC voltage applied between the first electrode member 3a (first target 2a) and the first shield member 8a (first electrode washer portion 81a) with respect to the AC voltage V generated at both ends of the secondary coil 9b. The AC voltage V ₂ applied between V ₁ and the second electrode member 3b (second target 2b) and the second shield member 8b (second electrode washer portion 81b) has an absolute value (1/2 | V |). Equally opposite to each other. Therefore, V ₁ + V ₂ = 0 [V], | V ₁ | = | V ₂ | = 1/2 | V |. Here, V is an alternating voltage at a certain time. Thereby, as shown in FIG. 5, a completely symmetrical plasma is formed and stabilized, and accelerated ions and atoms are effectively sputtered. For this reason, the AC voltage applied between the first target 2a and the second target 2b is not increased to a pair of the first target 2a and the second target 2b without requiring a series of devices for boosting, rectifying, matching, etc. A stable alternating voltage can be directly applied to stabilize the plasma generated between the targets, and a flat and uniform thin film can be formed.

  The substrate 7 is supported by the holder 71 on the side between the first target 2 a and the second target 2 b so as to face the magnetic field space A formed by the magnets 6 a and 6 b and is installed in the holder 71. . The components of the first target 2a and the second target 2b are deposited on the surface of the substrate 7 by sputtering to form a film. The material of the substrate 7 is not particularly limited, and any material such as metal, plastic, or insulating material can be used. In particular, a thin film can be formed on a substrate made of a material having a low melting point, such as plastic and soda glass, which has been difficult to form a thin film because of high energy particle impact and high temperature.

  A bias voltage is preferably applied between the substrate 7 and the first shield member 8a (first electrode washer portion 81a) via the bias circuit 17 so that the substrate 7 side has a negative potential. This makes it possible to control the nano-particles, crystallinity / composition, uniformity, etc. of the thin film by adjusting the bias voltage without particularly heating the substrate. The bias circuit 17 connects the AC power source 18 and the rectifying elements 19a and 19b as shown in FIG. 1 so that the substrate 7 is negative with respect to the first shield member 8a (first electrode washer portion 81a). A bias voltage that becomes a positive potential or a positive potential can be applied. As a result, desired energy and number of ions are emitted from the plasma, and the substrate and the growing film can be bombarded, so that the substrate heating is not required.

  Next, sputtering in the sputtering apparatus 1 will be described with reference to FIGS. In the following description, the AC power supplied to the primary side of the transformer 9 is commercial power of 100 [V], 50 [Hz] or 60 [Hz], and the winding ratio n = 1 of the transformer 9 is 1: 10. The case where Ar is used as the sputtering gas supplied to the space between the first target 2a and the second target 2b will be described.

In this sputtering apparatus 1, as shown in FIG. 4, 100 [V], 50 [Hz] supplied to the primary side coil 9 a of the transformer 9 having a winding ratio N = 1: 10 between the primary side and the secondary side. ] Or AC voltage V of 1000 [V], 50 [Hz] or 60 [Hz] is generated at both ends of the secondary coil 9b with respect to commercial AC power of 60 [Hz]. At this time, as described above, the first electrode member 3a (first target 2a) and the second electrode member 3b (second target 2b) are connected to both ends of the secondary side coil 9b of the transformer 9 via the wires 15a and 15b. ) Are connected. The first shield member 8a and the second shield member 8b are connected to the neutral point M of the secondary side coil 9b of the transformer 9 via the wirings 16a and 16b, and the neutral point M is grounded. ing. Therefore, the potential of the first electrode washer portion 81a of the first shield member 8a connected to the grounded neutral point M and the second electrode washer portion 81b of the second shield member 8b is 0 [V], The plasma potential (Vp) in the space (magnetic field space A) between the first electrode washer portion 81a and the second electrode washer portion 81b is 0 [V]. On the other hand, the 1st electrode member 3a and the 2nd electrode member 3b are connected to the both ends of the secondary side coil 9b of the transformer 9 via wiring 15a, 15b. Therefore, the first electrode member 3a (first target 2a) and the first shield member 8a (first electrode washer portion 81a) against the AC voltage V (1000 [V]) generated at both ends of the secondary coil 9b. the AC voltages _{V 1} applied between the AC voltage _{V 2} applied between the second electrode member 3b (second targets 2b) and the second shield member 8b (second electrode washer portion 81b), like that shown in FIG. 4 In addition, the absolute values (500 [V]) are equal and have opposite polarities. That is, V ₁ + V ₂ = 0 [V], | V ₁ | = | V ₂ | = ½ | V | = 500 [V]. And thus, the AC voltages _{V 1} between the first electrode member 3a (first targets 2a) and the first shield member 8a (first electrode washer portion 81a) is applied, the second electrode member 3b (second by alternating voltage _{V 2} is applied between the target 2b) and the second shield member 8b (second electrode washer portion 81b), between the first electrode washer portion 81a and the first target 2a, and a second electrode washer Due to the electric field generated between the portion 81b and the second target 2b, the space B1 between the magnetic field space A (Vp = 0 [V]) and the first target 2a, the magnetic field space A (Vp = 0 [V]), and the first High density charged particles (electrons / ions) are generated in the space B2 between the two targets 2b.

FIG. 5 shows simultaneously the positive side (V _E2 ) and negative side (V _E1 ) states of the AC voltage V _E in the operation described below.
In the sputtering apparatus 1 in such a state, a space between the second targets 2b to which an AC voltage of V ₁ −V ₂ (= 500 [V] − (− 500 [V]) = 1000 [V]) is applied. When Ar is supplied to (magnetic field space A), as shown in FIG. 5, Ar ionization (Ar ⁰ → Ar ⁺ + e ⁻ ) or charging (Ar ⁰ + e ⁻ → Ar ⁻ ), and further, ionized Ar or A plasma containing Ar ⁺ , Ar ⁰ , Ar ⁻ and electrons (e ⁻ ) is formed by collision between the charged Ars. At this time, since the magnetic field space A is formed by the magnets 6a and 6b in the space between the first target 2a and the second target 2b, Ar ⁺ , Ar ⁰ , Ar ⁻ , e ⁻ , And γ (gamma) electrons (electrons emitted from the target) are confined, and a high-density and stable plasma is formed.

Then, for example, at a certain point in time, a negative AC voltage V _E1 (V _E1 = 0−−) between the first electrode member 3a (first target 2a) and the first shield member 8a (first electrode washer portion 81a). 500 [V]) is applied, and a positive AC voltage V _E2 (V _E2 = 0 to 0) between the second electrode member 3b (second target 2b) and the second shield member 8b (second electrode washer portion 81b). In the state where +500 [V]) is applied, as shown in FIG. 5, the ionized Ar ⁺ existing around the first electrode washer portion 81 is transferred from the first electrode washer portion 81a to the first electrode member. Accelerated by the electric field E directed to 3a, moves toward the first target 2a functioning as the negative electrode at that time, and collides and sputters. Ar ^{+ that} has collided with the first target 2a becomes electrically neutral Ar ⁰ and rebounds, moves toward the second target 2b, and collides. As shown in FIG. 6, the collision Ar ⁰ is ionized and present as Ar ⁺ in the vicinity of the second target 2b, and is accelerated in the reverse direction when the voltage polarity is reversed. On the other hand, charged Ar ⁻ and electrons (e ⁻ ), which are negative ions existing in the magnetic field space A, are attracted to the second target 2b that is electrically positive at that time, and collide by moving. At this time, the ionized Ar ⁺ existing in the vicinity of the second target 2 b is bounced off and the ionized Ar ⁺ is pushed into the magnetic field space A, so that the plasma density in the magnetic field space A increases.

Further, at this time, the components constituting the first target 2a are sputtered from the first target 2a with which the ionized Ar ⁺ collides, and as shown in FIG. 6, negative sputter ions M ⁻ are scattered from the target surface. . The negative sputtered ions M ⁻ scattered from the first target 2a are accelerated by the electric field E and travel toward the second target 2b. On the way, they collide with the ionized Ar ⁺ and become electrically neutral sputtered atoms M ⁰ . Since the particles are sufficiently heavy in the plasma, most of the sputtered atoms M ⁰ are deposited on the surface of the substrate 7 disposed on the side to form a film.

Meanwhile, although not shown, an AC voltage V _1, the voltage polarity of the AC voltage V ₂ is reversed, plasma ions impinging on the first target 2a and the second target 2b becomes the opposite. That is, a positive AC voltage V _E1 (V _E1 = 0 to +500 [V]) is applied between the first electrode member 3a (first target 2a) and the first shield member 8a (first electrode washer portion 81a). A negative AC voltage V _E2 (V _E2 = 0 to −500 [V]) is generated between the second electrode member 3b (second target 2b) and the second shield member 8b (second electrode washer portion 81b). Applied. Then, the ionized Ar ⁺ moves toward the second target 2b, collides, and is sputtered. Further, Ar ⁺ that collides with the second target 2 b becomes electrically neutral Ar ⁰ and rebounds and moves toward the first target 2 a. On the other hand, charged Ar ^- is moved is pulled to the first target 2a collide skip bouncing Ar ^+, push the ionized Ar ⁺ in the magnetic field space A. Further, the components constituting the second target 2b are sputtered from the second target 2b collided with the ionized Ar ⁺ and deposited on the surface of the substrate 7 disposed on the side to form a film.

Next, in the sputtering apparatus 1, as shown in FIG. 1, a bias circuit 17 is interposed between the substrate 7 installed in the holder 71 and the first shield member 8a (first electrode washer portion 81a). For example, a bias voltage with a negative potential on the substrate 7 side is applied. Specifically, when the switch 20 of the bias circuit 17 is set on the right side in FIG. 1, a negative potential is applied to the holder 71 as the bias electrode with respect to the neutral point of the potential 0, and the substrate 7 If, for example, an insulating substrate, it is positively charged. A negative pulsating current flows through the bias circuit 17 via the rectifying element 19b. In this case, since electrons (e ⁻ ) collide with the substrate 7 from the magnetic field space A, heat is generated, so that the same film forming effect as that provided when a heater for heating the substrate 7 is provided separately is produced. This makes it possible to control the nanoparticles, crystallinity / composition, uniformity, and the like on the thin film without adjusting the substrate 7 by merely adjusting the bias voltage. When no bias voltage is applied between the substrate 7 and the first shield member 8a (first electrode washer portion 81a), the substrate 7 is plasma-free and has a floating potential. In addition, when a DC bias voltage is applied between the substrate 7 and the first shield member 8a (first electrode washer portion 81a), it is possible to attach a variable AC power source through a negative-direction rectifying element. On the other hand, when a bias voltage is applied between the substrate 7 and the first shield member 8a (first electrode washer portion 81a) via the bias circuit 17 so that the substrate 7 side has a negative potential. Various bias effects can be used. In the conventional bipolar sputtering apparatus, this effect cannot be obtained because the substrate is exposed to plasma. Also, suppose that the rectifying elements 19a. When the switch 19b is disposed in the reverse direction, the switch 20 is set on the right side in FIG. If a potential is applied and the substrate 7 is an insulating substrate, for example, it is negatively charged, and a positive pulsating current flows through the bias circuit 17 via the rectifying element 19b. In this case, ionized Ar ⁺ (ions) collide with the substrate 7 from the magnetic field space A, and the same effect is obtained.

On the other hand, when the switch 20 of the bias circuit 17 is set on the left side in FIG. 1, an alternating current flows through the biasing AC power supply 18, so that a negative potential and a positive potential are present in the holder 71 as the bias electrode. And are given periodically. In this case, a phenomenon in which electrons (e ⁻ ) are emitted from the magnetic field space A and a phenomenon in which ionized Ar ⁺ (ions) are emitted alternately occur. V _S shown in FIG. 7 shows the variation in one period (1 / f) worth of potential applied to the substrate 7 side. When a negative potential is applied to the substrate 7 in the first half of one period of the potential, Ar ⁺ ionized in the magnetic field space A collides with the substrate 7. If the substrate 7 is, for example, insulative, as shown in FIG. 6, for example, if the substrate 7 is negatively charged at a certain point, Ar ⁺ ionized in the magnetic field space A collides with the substrate 7. As a result, positive charges are accumulated on the substrate 7. Then, the ionized Ar ⁺ does not collide with the substrate 7 and the bias effect is weakened. However, in the sputtering apparatus 1, when the polarity of the AC power supply 18 is reversed (the second half of one period of the potential), the reversed bias voltage is applied in the same manner, and therefore, as shown in FIG. The existing electrons (e ⁻ ) collide with the substrate 7. As a result, the positive charges accumulated on the substrate 7 are canceled. Therefore, the bias effect is not weakened, and the impact energy of ionized Ar ⁺ does not decrease. As a result, the sputtered atoms M ⁰ are uniformly deposited on the substrate 7 over time, and the film quality is good. Can be made possible. In this embodiment, as an example, it is assumed that the bias AC power supply 18 and the sputtering AC power supply 2 are synchronized. That is, when the AC power source for bias 18, the AC power source for sputtering 2, and the AC voltage V _E2 of the second electrode member 3b, for example, are positive, the AC voltage V _E1 of the first electrode member 3a is negative. .

Next, cooling of each component in the sputtering apparatus 1 will be described.
In the sputtering apparatus 1, air introduction pipes are provided in the cooling air circulation spaces 4 a and 4 b surrounded by the target connection / support flat plates 31 a and 31 b of the first electrode member 3 a and the second electrode member 3 b and the side walls 32 a and 32 b. Cooling air is introduced through 33a and 33b. The cooling air introduced into the cooling air circulation spaces 4a and 4b passes through the first electrode member 3a, the second electrode member 3b, the magnets 6a and 6b, and the first electrode member 3a and the second electrode member 3b. The first target 2a and the second target 2b are cooled and exhausted from the air discharge ports 11a and 11b of the first electrode member 3a and the second electrode member 3b. As a result, it is possible to eliminate the occurrence of troubles such as adhesion, clogging, water leakage, water breakage, etc., which have occurred in the conventional water cooling mechanism. Further, the heat radiation / exhaust hole 85 formed in the peripheral wall portion 80 of the first shield member 8a and the second shield member 8b is used for heat generated by the first target 2a, the second target 2b, the magnets 6a and 6b, and the like. Effective for radiation. The heat radiation / exhaust hole 85 remains in the gap 14 between the inner surfaces of the first shield member 8a and the second shield member 8b and the outer surfaces of the first electrode member 3a and the second electrode member 3b, and is difficult to be exhausted. This is effective for exhausting the gas, reducing the pressure of the residual gas, and preventing the occurrence of sparks in the gap 14. In addition, since the water cooling method requires inspection and maintenance of the cooling water circulation facility and the cooling water distribution route, the apparatus is increased in size and cost, and operation costs, maintenance costs and labor are required. On the other hand, the sputtering apparatus 1 according to the present invention employs an air cooling method, so that maintenance is easy and the apparatus can be reduced in size, price, operating cost, and maintenance cost.

  The AC facing target type (FIG. 1: Example 1) and magnetron type (FIG. 8A: Comparative Example 1) and facing target type (FIG. 8B: Comparative Example 2) sputtering apparatus of the present invention are used. The representative examples and the like are displayed in comparison. Table 1 shows sputtering conditions and magnetic recording characteristics showing the best performance in each sputtering method when a Co—Cr: Ta alloy thin film employed as a recording layer of an ultrahigh density magnetic disk is formed. Here, for comparison, the case where no bias voltage is applied is shown. In Table 1, the unit of Ar gas pressure can be converted by 1 [Torr] = 133.322 [Pa], and the unit of coercive force is 1 [Oe] = 79.577 [A / m]. Can be converted. The unit BPI (bit per inch) of linear density represents the number of bits per 25.4 mm.

In obtaining the results of Example 1 and Comparative Examples 1 and 2 shown in Table 1, the configuration of each apparatus used for sample preparation and characteristic measurement is as follows.
In the sputtering apparatus of the present invention of Example 1, a pair of 10 cm (4 inch) diameter Co—Cr: Ta alloy targets are installed, and the sputtering power supply apparatus has a general commercial frequency of 50 in an AC transformer configured as shown in FIG. [Hz] and 100 [V] were input, and an output voltage of 500 [V] (with a neutral point) was used as a sputtering voltage. A turbo pump manufactured by Osaka Vacuum Works was used for evacuation. The gas pressure in the vacuum chamber and the argon (Ar) gas pressure of the sputtering gas were measured using an Anelva ionization vacuum gauge. The substrate temperature was measured by a thermocouple installed on the substrate holder. The film formation rate was determined by calculation from the film thickness obtained by measuring the formed film thickness with a cross-sectional transmission electron microscope (TEM) and the application time of the sputtering voltage. The coercive force was measured with a vibrating sample magnetometer (VSM) manufactured by Riken Electronics, and the linear density was measured with a custom-made read / write test stand.

The magnetron type sputtering apparatus of Comparative Example 1 was provided with a Co—Cr: Ta alloy target having a diameter of 20 cm (8 inches), and a custom-made DC power supply apparatus was used as a sputtering power supply. For evacuation, a diffusion pump manufactured by Osaka Vacuum Works was used.
The counter target type sputtering apparatus of Comparative Example 2 was provided with a pair of 15 cm (6 inch) diameter Co—Cr: Ta alloy targets, and a custom DC power supply apparatus was used as a sputtering power source. A turbo pump manufactured by Osaka Vacuum Works was used for evacuation.
For the gas pressure, substrate temperature, film formation rate, coercive force, and linear density measurement of Comparative Example 1 and Comparative Example 2, the same apparatus and method as in Example 1 were used.

From the above experimental results, it can be considered that the AC facing target type (FIG. 1) of the present invention is a sputtering method capable of forming a recording layer having the highest performance at low temperature and high speed.
As described above, the sputtering apparatus 1 has excellent effects such that it can be used at a general voltage by being constituted by each member and can be sufficiently operated by air cooling. The present invention is not limited to each member or configuration described with reference to the drawings and the like, and various modifications such as the following may be made as long as the same function is exhibited.

  In the sputtering apparatus 1, the funnel-shaped yokes 63 a and 63 b have been described as examples of the yoke, but the yoke may be formed in a cylindrical shape so as to be accommodated in the housing of the first electrode member 3 a or the second electrode member 3 b. When the yoke is formed in a cylindrical shape, a guide member that supports the hot air exhaust pipes 10a and 10b is installed. The funnel shape here means a state in which one end side is greatly opened and the other end side is opened smaller than that, and is inclined from one end side to the other end side (in FIG. 1, without being inclined, they are parallel to each other). ) May be formed.

Further, the sputtering apparatus 1 includes an AC voltage V ₁ is applied between the first target 2a and the first electrode washer portion 81a, an AC voltage V applied between the second target 2b and the second electrode washer portion 81b ₂ may be configured so that V ₁ + V ₂ = 0 [V], and better if the yoke is installed.
The shapes of the electrode members 3a and 3b or the shield members 8a and 8b are not particularly limited, such as a cylindrical shape, a rectangular parallelepiped shape, or a truncated cone shape (a wide surface is on the substrate side).

  Further, in the sputtering apparatus 1, since the temperature rise of the substrate 7 is small, the air introduction pipes 33a and 33b have been described as being configured on either the left or right side with the hot air exhaust pipes 10a and 10b in the center. A plurality of exhaust pipes 10a and 10b may be arranged at equal distances from each other with the exhaust pipes 10a and 10b in the center. By providing a plurality of air introduction pipes 33a and 33b, the supplied cooling air (air, cooling gas: inert gas) is cooled toward the central target connection / support flat plates 31a and 31b. Sputtering work can be performed on a substrate material that is highly effective and weak against heat.

  Further, the air introduction pipes 33a and 33b and the hot air exhaust pipes 10a and 10b may have the same thickness, and the opening height position of the target connection / support flat plates 31a and 31b is vertically For example, on the lower side of the target connection / support flat plate 31a side, the air introduction pipe 33a and the hot air exhaust pipe 10a are arranged in the same arrangement as in FIG. 1, and on the upper side of the target connection / support flat plate 31b side. Alternatively, the hot air exhaust pipe 10b may be installed in a shortened state so that the position of the hot air exhaust pipe 10b is close to the opening surface of the air introduction pipe 33b, and a vertically asymmetrical configuration may be employed.

It is a cross-sectional schematic diagram which shows the structure of the sputtering device which concerns on embodiment of this invention. It is a figure which shows the structure of a 1st electrode washer part and a 2nd electrode washer part. (A) is a perspective view which shows the heat dissipation / exhaust hole of a 1st shield member and a 2nd shield member, (b) is a cross-sectional schematic diagram which shows the heat dissipation / exhaust hole of a 1st shield member and a 2nd shield member. . It is a figure explaining the applied voltage to each structural member in the sputtering device which concerns on embodiment of this invention. It is a figure explaining the generation | occurrence | production and structure of the plasma, and operation | movement of a sputtered particle in the sputtering device which concerns on embodiment of this invention. It is a figure explaining the sputtering phenomenon in the sputtering device concerning the embodiment of the present invention. It is a figure explaining the bias voltage applied between a board | substrate and a 1st electrode washer part. A conventional apparatus is shown, (a) is a figure which shows schematic structure of a bipolar sputtering apparatus, (b) is a figure which shows schematic structure of a counter target type sputtering apparatus. 1 shows a conventional apparatus, and FIGS. 2A and 2B are diagrams showing a schematic configuration of a plasma focused sputtering apparatus using a two-pole type and a counter target type external excitation coil. A conventional apparatus is shown, (a) is a figure which shows schematic structure of a magnetron type | mold sputtering apparatus, (b) is a figure which shows schematic structure of the opposing target type | mold sputtering apparatus with a built-in magnet. It is a figure explaining the installation for applying a voltage between the anode and target / cathode in the conventional sputtering device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Sputtering apparatus 2 AC power supply for sputtering 2a 1st target 2b 2nd target 3a 1st electrode member 3b 2nd electrode member 31a, 31b Target connection and support flat plate 32a, 32b Side wall part 33a, 33b Air introduction pipe 4a, 4b For cooling Air circulation space 6a, 6b Magnet 62a, 62b End 63a, 63b Yoke 7 Substrate 71 Holder 8a First shield member 8b Second shield member 80 Peripheral wall 80a, 80b End 81a First electrode washer 81b Second electrode washer 82 Tapered portion 83 Inner edge lower end 85 Heat radiation / exhaust hole 9 Transformer 9a Primary side coil 9b Secondary side coil 10a, 10b Hot air exhaust pipe 11a, 11b Air exhaust port 12a, 12b Air intake port 13 Insulating member 14 Gap 15a, 15b Wiring 16a, 16b wiring 17 bias circuit 1 8 Bias AC Power Supply 19a, 19b Rectifier 20 Switch 21 Side Edge 100 Vacuum Chamber 101 Substrate 101a Anode 102 Target 102a Cathode 103 DC Power Supply 104 Cathode 105a, 105b Target 106 Cathode 104a, 106a Anode Washer 107 Space 108 DC Power Supply 109 External Excitation Coil 110 Permanent magnet 116 Substrate A Magnetic field space B1, B2 Strong electric field space M Neutral point

Claims (10)

A first target and a second target arranged opposite to each other at an interval;
A first electrode member and a second electrode member for connecting and supporting each of the first target and the second target;
A pair of magnets disposed on the back side of each of the first electrode member and the second electrode member to form a magnetic field space between the first target and the second target;
An annular first electrode washer portion projecting from the peripheral wall portion surrounding the side surfaces of the first electrode member and the second electrode member toward the center of the front surface of the first target and the second target; A first shield member and a second shield member having a second electrode washer;
A holder for installing a substrate disposed facing the magnetic field space on a side between the first target and the second target;
The AC voltage V ₁ applied between the first target and the first electrode washer unit and the AC voltage V ₂ applied between the second target and the second electrode washer unit are V ₁ + V ₂ = Sputtering apparatus characterized by being set to 0 [V].   A transformer for applying an AC voltage between the first target and the second target is provided, and each of the first electrode member and the second electrode member is provided at both ends of a secondary high voltage coil of the transformer. The grounding point of the secondary high-voltage coil is grounded, and the first shield member and the second shield member are connected to the neutral point. Sputtering device.   The sputtering apparatus according to claim 1, wherein a bias voltage having a negative potential on the substrate side is applied between the substrate and the first shield member or the second shield member. .   4. The sputtering apparatus according to claim 1, further comprising a yoke extending from each of the magnets toward a back side of the first target or the second target. 5.   The sputtering apparatus according to claim 4, wherein the yoke is made of directional silicon steel.   The said 1st electrode member, the said 2nd electrode member, the said 1st shield member, and the said 2nd shield member are formed with Cu, The any one of Claims 1-5 characterized by the above-mentioned. The sputtering apparatus described.   The first electrode member and the second electrode member, and the first shield member and the second shield member are connected via an insulating member made of polyimide. 6. The sputtering apparatus according to any one of items 6.   The first electrode washer portion and the second electrode washer portion expand from the magnetic field space toward the first target or the second target at an angle in a range of 43 to 47 degrees around 45 degrees. The sputtering apparatus according to claim 1, further comprising a tapered portion formed.   Each of the first electrode member and the second electrode member has a cooling air circulation space therein, an air introduction pipe for introducing the cooling atmosphere into the cooling air circulation space, and hot air for exhausting the heated atmosphere The sputter apparatus according to any one of claims 1 to 8, wherein an exhaust pipe is inserted.   Heat dissipation that allows residual gas in the gap between the first electrode member and the second electrode member and the first shield member and the second shield member to flow out to the peripheral wall portions of the first shield member and the second shield member. 10. The sputtering apparatus according to any one of claims 1 to 9, wherein an exhaust hole is formed.

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