JPH1129861A - Production of sputtered film and opposite target type sputtering device - Google Patents
Production of sputtered film and opposite target type sputtering deviceInfo
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- JPH1129861A JPH1129861A JP20385797A JP20385797A JPH1129861A JP H1129861 A JPH1129861 A JP H1129861A JP 20385797 A JP20385797 A JP 20385797A JP 20385797 A JP20385797 A JP 20385797A JP H1129861 A JPH1129861 A JP H1129861A
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- Prior art keywords
- phase
- sputtered film
- film
- sputtering
- substrate
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、速い成膜速度でス
パッタ膜を作製する方法及びかかるスパッタ膜を作製す
るための装置に関する。The present invention relates to a method for producing a sputtered film at a high film forming rate and an apparatus for producing such a sputtered film.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】従来よ
り、種々の金属や金属化合物をスパッタリング法により
作製することは広く行われており、各種スパッタリング
方式、スパッタリング装置が提案されている。2. Description of the Related Art Conventionally, various metals and metal compounds have been widely produced by a sputtering method, and various sputtering methods and sputtering apparatuses have been proposed.
【０００３】例えば、特公昭６２−５６５７５号公報、
特公昭６３−２０３０４号公報、特公平３−１８１０号
公報には、対向ターゲット式スパッタリング法が提案さ
れており、結晶性の良好な垂直磁化膜を作製することが
開示されている。[0003] For example, Japanese Patent Publication No. Sho 62-56575,
Japanese Patent Publication No. 63-20304 and Japanese Patent Publication No. 3-1810 propose a facing target type sputtering method, which discloses the preparation of a perpendicular magnetic film having good crystallinity.
【０００４】しかし、この従来の対向ターゲット式スパ
ッタリング法は、成膜速度が遅いという課題があり、こ
の点の解決が望まれていた。However, the conventional facing target type sputtering method has a problem that the film forming rate is low, and it is desired to solve this problem.
【０００５】[0005]
【課題を解決するための手段及び発明の実施の形態】本
発明者は、上記要望に応えるため鋭意検討を行った結
果、互いに対向するターゲット間のスパッタ空間の側方
に基板を配置し、該基板上にスパッタ膜を形成する対向
ターゲット式スパッタリング方式によりスパッタ膜を作
製する場合に、上記両ターゲットに１８０度位相のずれ
た交流電圧を印加することにより、高速で成膜し得るこ
とを見出した。Means for Solving the Problems and Embodiments of the Invention The present inventor has conducted intensive studies in order to meet the above-mentioned demands, and as a result, arranged a substrate on the side of a sputtering space between targets facing each other. When producing a sputtered film by a facing target type sputtering method in which a sputtered film is formed on a substrate, it has been found that a high-speed film can be formed by applying an AC voltage 180 ° out of phase to both targets. .
【０００６】即ち、対向ターゲット式スパッタリング法
は、カソード（ターゲット）は互いに対向して２個ある
が、従来の方法では、これらカソードに直流又は交流電
圧を同じ位相で印加するものであり、上述したように成
膜速度が遅いものである。特に、反応性ガスを導入して
リアクティブスパッタリングを行うと、反応性ガスとの
反応の面から極端に成膜速度が低下する。ところが、対
向ターゲット式スパッタリング法において、互いに対向
する２個のターゲットに１８０度位相のずれた交流電圧
を印加することで、特にリアクティブスパッタリング法
の場合、結晶性の優れた金属化合物を高速で成膜するこ
とができ、例えばターゲットにチタン金属を用い、スパ
ッタ空間に不活性ガスと酸素分子を有するガスとを導入
して酸化チタン薄膜を作製した場合、高速で高光触媒活
性を有するアナターゼ型結晶リッチの薄膜を形成し得る
ことを知見したものである。That is, in the opposed target sputtering method, two cathodes (targets) are opposed to each other. In the conventional method, a DC or AC voltage is applied to these cathodes in the same phase. Thus, the film forming speed is low. In particular, when reactive sputtering is performed by introducing a reactive gas, the deposition rate is extremely reduced in terms of reaction with the reactive gas. However, by applying an alternating voltage 180 degrees out of phase to two opposing targets in the opposed target sputtering method, a metal compound having excellent crystallinity can be formed at a high speed, particularly in the case of the reactive sputtering method. For example, when titanium metal is used as a target and an inert gas and a gas containing oxygen molecules are introduced into a sputtering space to form a titanium oxide thin film, anatase-type crystal rich having high photocatalytic activity at high speed can be obtained. It has been found that a thin film can be formed.
【０００７】この場合、位相を１８０度ずらした交流ス
パッタ法は、特開平５−２２２５３１号公報、特開平６
−２１２４２１号公報で提案されている。しかし、従来
のこの種の交流スパッタ法は、２個のターゲットを対向
させずに並列配置し、これらターゲットにスパッタ膜を
形成すべき基板を対向した状態で配置してスパッタリン
グを行うものであるが、この方式では基板がプラズマ放
電にさらされる上、特に酸化チタン光触媒膜を成膜する
場合、得られる膜はアモルファス構造となってしまうた
め、触媒活性が殆どないものであり、上記対向ターゲッ
トに位相が１８０度ずれた交流電圧を印加することで、
高速でアナターゼ構造の光触媒膜を得ることができるも
のである。In this case, the alternating-current sputtering method in which the phase is shifted by 180 degrees is disclosed in Japanese Patent Application Laid-Open Nos.
-212421 has been proposed. However, in this type of conventional AC sputtering method, two targets are arranged in parallel without facing each other, and sputtering is performed by arranging a substrate on which a sputter film is to be formed on these targets in an opposed state. However, in this method, the substrate is exposed to plasma discharge, and particularly when a titanium oxide photocatalyst film is formed, the obtained film has an amorphous structure, and therefore has almost no catalytic activity. By applying an AC voltage shifted by 180 degrees,
A photocatalytic film having an anatase structure can be obtained at high speed.
【０００８】また、この従来の交流スパッタ法に用いる
装置は、互いに１８０度位相のずれた交流電圧を印加す
る場合、信号発生器から出た信号を元に１８０度位相の
ずれたある周波数の交流信号を作り出し、増幅すること
で高電圧、高電流を得ているが、信号を作成するのに複
雑な回路が必要で、装置が高価なものとなり、従ってス
パッタ膜の作製価格も高価なものとなる。ところが、上
記単相複巻昇圧トランスを用いることにより、商用の５
０Ｈｚ又は６０Ｈｚの単相交流をそのまま使用して互い
に位相が１８０度ずれた交流信号を与えることができる
ので、装置が安価なものとなり、スパッタ膜を安価に作
製し得ることを見出し、本発明をなすに至ったものであ
る。Further, in the apparatus used in the conventional AC sputtering method, when applying AC voltages 180 ° out of phase with each other, an AC voltage 180 ° out of phase based on a signal output from a signal generator is applied. High voltage and high current are obtained by creating and amplifying the signal, but a complicated circuit is required to create the signal, and the equipment becomes expensive, and therefore, the production cost of the sputter film is also expensive. Become. However, by using the single-phase compound winding step-up transformer, commercial 5
The present inventors have found that a single-phase alternating current of 0 Hz or 60 Hz can be used as it is, and an alternating-current signal whose phase is shifted by 180 degrees can be provided, so that the apparatus becomes inexpensive and a sputtered film can be produced at low cost. It is something that has been done.
【０００９】従って、本発明は、 請求項１：互いに対向するターゲット間のスパッタ空間
の側方に基板を配置し、該基板上にスパッタ膜を形成す
る対向ターゲット式スパッタリング法にてスパッタ膜を
作製するに際し、単相交流を単相複巻昇圧トランスによ
り昇圧すると共に、互いに１８０度位相のずれた交流信
号を形成し、上記２個のターゲットに上記互いに１８０
度位相のずれた交流電圧を印加することを特徴とするス
パッタ膜の作製方法 請求項２：ターゲットがチタンであり、スパッタ空間に
不活性ガスと酸素分子を有するガスを導入して、基板上
に酸化チタン膜を成膜するようにした請求項１記載の作
製方法 請求項３：装置本体内に一対のターゲットを対向配置す
ると共に、スパッタ空間の側方にスパッタ膜を形成すべ
き基板を配置してなる対向ターゲット式スパッタリング
装置において、単相交流を昇圧すると共に、互いに１８
０度位相のずれた交流信号を形成する単相複巻昇圧トラ
ンスを配置し、このトランスの一方の端子を上記一方の
ターゲットに、他方の端子を他方のターゲットに接続す
ることを特徴とする対向ターゲット式スパッタリング装
置 を提供する。Accordingly, the present invention provides a method for producing a sputtered film by a facing target type sputtering method in which a substrate is arranged on a side of a sputtering space between targets facing each other and a sputtered film is formed on the substrate. In doing so, the single-phase alternating current is stepped up by a single-phase compound-winding step-up transformer, and an alternating-current signal 180 degrees out of phase with each other is formed.
A method for producing a sputtered film, characterized by applying an alternating voltage with a phase shift of two degrees. Claim 2: A target is titanium, and an inert gas and a gas containing oxygen molecules are introduced into the sputter space to form a sputtered film on the substrate. The manufacturing method according to claim 1, wherein a titanium oxide film is formed. Claim 3: A pair of targets are arranged opposite to each other in the apparatus main body, and a substrate on which a sputtered film is to be formed is arranged laterally of a sputtering space. In the opposed target type sputtering apparatus, the single-phase AC is boosted and
A single-phase compound-winding step-up transformer for forming an AC signal having a phase shift of 0 degrees is arranged, and one terminal of the transformer is connected to the one target and the other terminal is connected to the other target. Provided is a target type sputtering apparatus.
【００１０】以下、本発明につき更に詳しく説明する
と、本発明のスパッタ膜の作製方法は、対向ターゲット
式スパッタリング装置を用いて成膜するものであるが、
この場合、互いに対向して配置された２個のターゲット
に１８０度位相のずれた交流電圧を印加してスパッタリ
ングを行うものである。Hereinafter, the present invention will be described in more detail. The method of producing a sputtered film of the present invention is a method of forming a film using a facing target type sputtering apparatus.
In this case, sputtering is performed by applying an alternating voltage 180 degrees out of phase to two targets arranged opposite to each other.
【００１１】ここで、この対向ターゲット式スパッタリ
ング装置としては、電源が相違するほかは公知の装置態
様とすることができ、例えば図１に示す装置を使用し得
る。即ち、図１において、１は内部を脱気真空可能な装
置本体で、この装置本体１内に一対の金属ターゲット
２，２が互いに所定間隔離間対向して配置されたもので
ある。これらターゲット２，２は、それぞれ支持部３
ａ，３ａを有するホールド３，３に保持され、これらホ
ールド３，３を介してスパッタ電源（交流電源）４に接
続されていると共に、上記ターゲット２，２の背後に磁
石５，５が互いに異なる磁極が対向するように配置さ
れ、上記ターゲット２，２間のスパッタ空間６に、ター
ゲット２，２に対して垂直方向の磁界が発生するように
なっている。そして、上記スパッタ空間６の側方には、
スパッタ膜を形成すべき基板７が配置されたものであ
る。なお、８は基板７を所定方向に移動可能に支持する
支持部材である。Here, as the facing target type sputtering apparatus, a known apparatus mode can be used except for the power supply, and for example, the apparatus shown in FIG. 1 can be used. That is, in FIG. 1, reference numeral 1 denotes an apparatus main body whose inside can be degassed and evacuated, in which a pair of metal targets 2 and 2 are opposed to each other for a predetermined distance. These targets 2 and 2 are supported
a, 3a are held by holders 3, 3 and connected to a sputtering power supply (AC power supply) 4 via the holders 3, 3, and magnets 5, 5 behind the targets 2, 2 are different from each other. The magnetic poles are arranged so as to face each other, and a magnetic field perpendicular to the targets 2 is generated in the sputtering space 6 between the targets 2. Then, beside the sputtering space 6,
The substrate 7 on which a sputtered film is to be formed is arranged. Reference numeral 8 denotes a support member that supports the substrate 7 so as to be movable in a predetermined direction.
【００１２】ここで、上記スパッタ電源４において、４
ａは５０Ｈｚ又は６０Ｈｚの２００Ｖ商用電源であり、
４ｂは単相複巻昇圧トランスであり、このトランス４ｂ
により、上記商用電源からの単相交流信号が互いに位相
が１８０度異なる２つの単相交流とされ、このトランス
４ｂの一方の端子に一方のターゲット２のホールド３が
接続されていると共に、他方の端子に他方のターゲット
２のホールド３が接続され、これにより互いに対向する
ターゲット２，２に１８０度位相のずれた交流電圧が印
加されるようになっている。Here, in the sputtering power source 4,
a is a 50Hz or 60Hz 200V commercial power supply,
4b is a single-phase compound winding step-up transformer.
As a result, the single-phase AC signal from the commercial power supply is converted into two single-phase alternating currents whose phases are different from each other by 180 degrees. The hold 3 of one target 2 is connected to one terminal of the transformer 4b, and the other is connected to the other terminal. The hold 3 of the other target 2 is connected to the terminal, so that alternating voltages 180 degrees out of phase are applied to the targets 2 and 2 facing each other.
【００１３】上記のような装置を用いてスパッタリング
を行い、基板上にスパッタ膜を形成する場合、その条件
は特に制限されず、通常の条件を採用して金属ターゲッ
トの種類あるいはターゲット空間に導入する反応性ガス
の種類に応じたスパッタ膜を形成することができるが、
本発明は特に基板上に光触媒膜を形成する場合に好適で
ある。When sputtering is performed using the above-described apparatus to form a sputtered film on a substrate, the conditions are not particularly limited, and ordinary conditions are adopted to introduce the metal target into the target space or the target space. Although a sputtered film can be formed according to the type of reactive gas,
The present invention is particularly suitable for forming a photocatalytic film on a substrate.
【００１４】ここで、基板上に光触媒膜を形成するに際
し、使用する金属ターゲットとしては、光触媒作用を有
する金属酸化物ＭｅＯx（ＭｅはＡｌ，Ｃｏ，Ｃｕ，Ｆ
ｅ，Ｉｎ，Ｍｇ，Ｓｎ，Ｔｉ，Ｚｎ等の金属を示し、ｘ
は金属の種類によって異なるが、０〜１０、好ましくは
０〜５の範囲の正数であり、ｘは必ずしも金属の価数に
相当していなくてもよい）を得るための金属酸化物に対
応した金属が選定されるが、特には酸化チタン膜を形成
するチタンが好ましい。In forming a photocatalytic film on a substrate, a metal target used is a metal oxide MeO x having photocatalytic action (Me is Al, Co, Cu, F
e, metals such as In, Mg, Sn, Ti and Zn, and x
Is a positive number in the range of 0 to 10, preferably 0 to 5, and x does not necessarily correspond to the valence of the metal, although it depends on the type of metal. Although a selected metal is selected, titanium that forms a titanium oxide film is particularly preferable.
【００１５】真空チャンバー内を十分に排気後、不活性
ガスと酸素分子を有するガスを導入した後、上記チャン
バー内の圧力を０．１〜１００ｍＴｏｒｒ、特に０．３
〜３０ｍＴｏｒｒに保ち、成膜を行う。ここで、上記ス
パッタ空間に供給される酸素分子を有するガス（酸化性
ガス）としては、公知のガスを使用することができ、具
体的には、酸素、オゾン、空気、水等が挙げられ、通常
は酸素が用いられる。また、不活性ガスとしては、ヘリ
ウム、アルゴンなどを用いることができ、特に工業的に
安価なアルゴンが好適に使用し得る。After the inside of the vacuum chamber is sufficiently evacuated, a gas containing an inert gas and oxygen molecules is introduced, and then the pressure in the chamber is set to 0.1 to 100 mTorr, particularly 0.3 mTorr.
The film is formed while keeping the pressure at 30 mTorr. Here, as the gas containing oxygen molecules (oxidizing gas) supplied to the sputtering space, a known gas can be used, and specific examples thereof include oxygen, ozone, air, and water. Usually, oxygen is used. Helium, argon, or the like can be used as the inert gas, and particularly industrially inexpensive argon can be suitably used.
【００１６】[0016]
【発明の効果】本発明によれば、スパッタリング装置を
安価に製作でき、従ってコスト的に安価にかつ速い成膜
速度でスパッタ膜を作製することができる。According to the present invention, a sputtering apparatus can be manufactured at low cost, and therefore, a sputtered film can be manufactured at low cost and at a high film forming rate.
【００１７】[0017]
【実施例】以下、実施例を示し、本発明を具体的に説明
するが、本発明は下記の実施例に制限されるものではな
い。The present invention will be described below in more detail with reference to Examples, but the present invention is not limited to the following Examples.
【００１８】〔実施例〕図１に示す対向ターゲット式ス
パッタリング装置を用いて、２枚の直径１００ｍｍのチ
タンターゲットをそれぞれのカソードに設置した。基材
として０．１ｍｍ厚のステンレス板（ＳＵＳ３０４）を
用い、予めアセトンで脱脂した後、真空装置にセットし
た。真空チャンバーを排気した後、まずアルゴンガスの
みを流し、チャンバー中で高周波プラズマ処理（１００
Ｗ×１０分間）を行った後、アルゴンガスを流量１０ｃ
ｃ／ｍｉｎ、酸素ガスを流量１０ｃｃ／ｍｉｎで流し、
成膜圧力５ｍＴｏｒｒで１８０度位相をずらした交流電
圧を対向するターゲットにそれぞれ印加し、投入電力１
２００Ｗで６０分間成膜した。[Embodiment] Using a facing target type sputtering apparatus shown in FIG. 1, two titanium targets having a diameter of 100 mm were set on each cathode. A 0.1 mm-thick stainless steel plate (SUS304) was used as a substrate, degreased with acetone in advance, and then set in a vacuum device. After evacuating the vacuum chamber, first, only argon gas is flowed, and high-frequency plasma processing (100
W × 10 minutes), and then flow argon gas at a flow rate of 10 c.
c / min, oxygen gas at a flow rate of 10 cc / min,
An AC voltage 180 degrees out of phase with a film forming pressure of 5 mTorr was applied to the opposing targets, and the applied power was 1
Film formation was performed at 200 W for 60 minutes.
【００１９】この場合、商用の５０Ｈｚ，２００Ｖの単
相交流を単相複巻昇圧トランスにより６００Ｖに昇圧す
ると共に、互いに１８０度位相のずれた２個の単相交流
信号を得た。In this case, a single-phase commercial AC of 50 Hz and 200 V was stepped up to 600 V by a single-phase compound winding step-up transformer, and two single-phase AC signals having a phase shift of 180 degrees from each other were obtained.
【００２０】その結果、成膜速度はテーラーホブソン社
製の膜厚計で膜厚を測定したところ、３００Å／ｍｉｎ
であり、また光触媒効果は成膜した膜の上に機械油を
０．１ｍｇ／ｃｍ2程度塗布した後、４００Ｗ低圧水銀
ランプ下１５ｃｍの位置に試験片を置き、３時間照射後
の重量減少量から求めたところ、油分解率は９５％であ
った。As a result, when the film thickness was measured by a film thickness meter manufactured by Taylor Hobson, it was found to be 300 ° / min.
The photocatalytic effect is as follows. After applying about 0.1 mg / cm 2 of mechanical oil on the formed film, the test piece is placed at a position of 15 cm under a 400 W low-pressure mercury lamp, and the weight loss after irradiation for 3 hours. As a result, the oil decomposition rate was 95%.
【図１】本発明に係る対向ターゲット式スパッタリング
装置の一実施例を示す概略図である。FIG. 1 is a schematic view showing an embodiment of a facing target type sputtering apparatus according to the present invention.
１ 装置本体 ２ 金属ターゲット ３ ホールド ３ａ 支持部 ４ スパッタ電源 ４ａ 商用電源 ４ｂ 単相複巻昇圧トランス ５ 磁石 ６ スパッタ空間 ７ 基板 ８ 支持部材 DESCRIPTION OF SYMBOLS 1 Apparatus main body 2 Metal target 3 Hold 3a Support part 4 Sputter power supply 4a Commercial power supply 4b Single-phase compound winding step-up transformer 5 Magnet 6 Sputter space 7 Substrate 8 Support member
Claims (3)
空間の側方に基板を配置し、該基板上にスパッタ膜を形
成する対向ターゲット式スパッタリング法にてスパッタ
膜を作製するに際し、単相交流を単相複巻昇圧トランス
により昇圧すると共に、互いに１８０度位相のずれた交
流信号を形成し、上記２個のターゲットに上記互いに１
８０度位相のずれた交流電圧を印加することを特徴とす
るスパッタ膜の作製方法。1. A method according to claim 1, wherein a substrate is arranged on a side of a sputtering space between targets facing each other, and when a sputtered film is formed by a facing target type sputtering method in which a sputtered film is formed on the substrate, a single-phase alternating current is applied. In addition to boosting the voltage by the phase compound winding step-up transformer, an alternating current signal 180 degrees out of phase with each other is formed.
A method for producing a sputtered film, characterized by applying an alternating voltage having a phase shift of 80 degrees.
間に不活性ガスと酸素分子を有するガスを導入して、基
板上に酸化チタン膜を成膜するようにした請求項１記載
の作製方法。2. The method according to claim 1, wherein the target is titanium, and a gas containing an inert gas and oxygen molecules is introduced into the sputtering space to form a titanium oxide film on the substrate.
置すると共に、スパッタ空間の側方にスパッタ膜を形成
すべき基板を配置してなる対向ターゲット式スパッタリ
ング装置において、単相交流を昇圧すると共に、互いに
１８０度位相のずれた交流信号を形成する単相複巻昇圧
トランスを配置し、このトランスの一方の端子を上記一
方のターゲットに、他方の端子を他方のターゲットに接
続することを特徴とする対向ターゲット式スパッタリン
グ装置。3. A facing target type sputtering apparatus in which a pair of targets are arranged opposite to each other in an apparatus main body and a substrate on which a sputtered film is to be formed is arranged on a side of a sputtering space, and a single-phase alternating current is boosted. A single-phase compound-winding step-up transformer that forms alternating-current signals 180 degrees out of phase with each other is arranged, and one terminal of the transformer is connected to the one target and the other terminal is connected to the other target. Target type sputtering apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20385797A JP3783750B2 (en) | 1997-07-14 | 1997-07-14 | Method for producing sputtered film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20385797A JP3783750B2 (en) | 1997-07-14 | 1997-07-14 | Method for producing sputtered film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1129861A true JPH1129861A (en) | 1999-02-02 |
| JP3783750B2 JP3783750B2 (en) | 2006-06-07 |
Family
ID=16480853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20385797A Expired - Fee Related JP3783750B2 (en) | 1997-07-14 | 1997-07-14 | Method for producing sputtered film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3783750B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003028885A1 (en) * | 2001-09-28 | 2003-04-10 | Shibaura Mechatronics Corporation | Photocatalyst element, method and device for preparing the same |
| JP2008127582A (en) * | 2006-11-16 | 2008-06-05 | Osaka Vacuum Ltd | Composite type sputtering system and composite type sputtering method |
| EP1978127A1 (en) * | 2006-01-25 | 2008-10-08 | Ulvac, Inc. | Spattering device and film forming method |
| JP2010156018A (en) * | 2008-12-26 | 2010-07-15 | Masahiko Naoe | Sputtering apparatus |
-
1997
- 1997-07-14 JP JP20385797A patent/JP3783750B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003028885A1 (en) * | 2001-09-28 | 2003-04-10 | Shibaura Mechatronics Corporation | Photocatalyst element, method and device for preparing the same |
| US7799731B2 (en) | 2001-09-28 | 2010-09-21 | Shibaura Mechatronics Corporation | Photocatalyst element, method and device for preparing the same |
| US8022011B2 (en) | 2001-09-28 | 2011-09-20 | Shibaura Mechatronics Corporation | Photocatalyst element, method and device for preparing the same |
| EP1978127A1 (en) * | 2006-01-25 | 2008-10-08 | Ulvac, Inc. | Spattering device and film forming method |
| EP1978127A4 (en) * | 2006-01-25 | 2012-06-20 | Ulvac Inc | Spattering device and film forming method |
| JP2008127582A (en) * | 2006-11-16 | 2008-06-05 | Osaka Vacuum Ltd | Composite type sputtering system and composite type sputtering method |
| JP4614936B2 (en) * | 2006-11-16 | 2011-01-19 | 株式会社大阪真空機器製作所 | Composite type sputtering apparatus and composite type sputtering method |
| JP2010156018A (en) * | 2008-12-26 | 2010-07-15 | Masahiko Naoe | Sputtering apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3783750B2 (en) | 2006-06-07 |
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