GB2110719A - Sputtering apparatus - Google Patents

Sputtering apparatus Download PDF

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Publication number
GB2110719A
GB2110719A GB08231830A GB8231830A GB2110719A GB 2110719 A GB2110719 A GB 2110719A GB 08231830 A GB08231830 A GB 08231830A GB 8231830 A GB8231830 A GB 8231830A GB 2110719 A GB2110719 A GB 2110719A
Authority
GB
United Kingdom
Prior art keywords
target
magnet
sputtering apparatus
shield
yoke
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB08231830A
Other versions
GB2110719B (en
Inventor
Haruhiro Kobayashi
Hidefumi Funaki
Takehiro Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19236081A external-priority patent/JPS5893872A/en
Priority claimed from JP57102260A external-priority patent/JPS58221275A/en
Application filed by Anelva Corp filed Critical Anelva Corp
Publication of GB2110719A publication Critical patent/GB2110719A/en
Application granted granted Critical
Publication of GB2110719B publication Critical patent/GB2110719B/en
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • H01J37/3408Planar magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497Temperature of target

Abstract

A cathode including a target (24) of ferro magnetic material and a substrate (16a-16c) to be sputtered are disposed in an evacuated vessel (11) in spaced confronting relationship so as to sputter the target with ions to form a thin magnetic film on said substrate. Magnets (22, 23) are disposed on a backing plate (21, 34), a shield (28, 29) covers surfaces of the magnet facing the substrate, the shield being made of the same or similar material as the target, and metal blocks (25, 26, 27) laterally surround the magnet in the thermal contact with the shield and the backing plate, whereby to control temperature rise in the apparatus and thereby to permit an increase in the sputtering deposition rate.

Description

SPECIFICATION Sputtering apparatus This invention relates to sputtering apparatus, and more particularly a magnetron type sputtering apparatus suitable to use ferromagnetic material as a target.
In the sputtering apparatus of this type, negative voltage is impressed upon a target disposed at the cathode under a pressure of 10-' to 10-5 Torr to emit electrons from the target and the electrons are caused to whirl about the target so as to ionize gas molecules.
The resulting ions are caused to collide against the target surface to sputter the target material so as to form a metal film on a substrate. In such sputtering apparatus, for the purpose of increasing the productivity of the film by improving the deposition rate it has been proposed to use magnetic field having a component parallel to the target surface in front of the target. In most cases, magnetic pole pairs are disposed on the rear side of the target so as to utilize the magnetic field reaching the front surface of the target therethrough.
However, where the target is made of ferromagnetic material, it is difficult for the magnetic poles on the rear side of the target to have an influence on the front side. For this reason, for the purpose of utilizing ferromagnetic material for sputtering, various proposals have been made. According to one proposal the magnet poles are diposed in front of the target. With this construction, however, there is a problem that the pole surface may be sputterred. So poles should be covered by a material having the same or similar composition as the target.
In the sputtering apparatus with its magnetic poles covered by the shield, not only the sputtering speed of ferromagnetic material can be improved to some extent but also sputtering of the magnetic poles themselves can be prevented. However, when the sputtering deposition rate is increased further the temperature of the magnetic poles rises, thus degrading the characteristic.
Accordingly it is an object of this invention to provide an improved sputtering apparatus of the type wherein magnetic poles are disposed in front of a target and the front surfaces of the poles are covered by a material having the same or similar composition as the target, and in which temperature rise of the poles and shields are controlled thereby enabling to increase the sputtering rate of ferromagnetic material.
These and further objects can be accomplished according to this invention by providing shields on the upper surfaces of the magnetic poles disposed in front of or on the target and by disposing metal blocks made of material such as copper, stainless steel, aluminium or thin feromagnetic material around the magnetic poles.
According to this invention there is provided sputtering apparatus of the type wherein a cathode including a target made of magnetic material and substrate to be sputtered are disposed in an evacuated vessel in a spaced opposing relationship so as to sputter the target with ions to form thin magnetic films on the substrate, characterized in that there are provided at least two magnets disposed on the target, shields covering surfaces of the magnets facing the substrate, the shields being made of the same or similar material as the target, and blocks made of material such as copper, stainless steel, aluminum or thin feromagnetic material and disposed surrounding the magnets, and a backing plate supporting the magnets.
Figure 1 is a perspective view, partly broken away, showing one embodiment of the sputtering apparatus according to this invention; Figures 2 and 3 are cross sectional views showing modified target assemblies; Figure 4 is a cross sectional view showing a modification of Fig. 3 in which a letter E type yoke is disposed beneath the target support; Figure 5 is a perspective view, partly in section, showing a modified embodiment of the sputtering apparatus of this invention in which cooling water passages are provided through metal blocks; and Figures 6 through 10 are cross sectional views showing other modifications of the target assembly having cooling water passages.
Throughout the drawings similar or identical parts are designated by the same reference numerals, and those having the same performances are designated by the same reference numerals with appropriate suffixes.
In the embodiment shown in Fig. 1, a letter T shaped cathode supporter 1 2 supporting a cathode is contained in an evacuated vessel 11 is of the sputter apparatus 1 0. The cathode supporter 1 2 is formed with cooling water passages 1 3a and 1 3b for passing cooling water from outside source and a wiring conduit, not shown, accommodating wirings necessary for sputtering.
A cathode assembly 1 5 to be described hereunder in detail is mounted on the cathode supporter 1 2. A substrate holder 1 8 adapted to support substrates 1 6a, 1 6b, 1 6c to be sputtered polyester films for example, is disposed above the target assembly 1 5 with a suitable spacing. The vessel 11 is connected to an evacuation pump, not shown, through a pipe 11 a and to an argon gas bomb, not shown, through a pipe 11 b for forming ions for causing sputtering.
The cathode assembly 1 5 characterizing the invention is constructed as follows. More particularly, the cathode assembly 1 5 comprises a backing plate 21 made of soft ferromagnetic material. The backing plate 21 has a rectangular configuration, for example, and is directly mounted on the cathode supporter 12, and an annular permanent magnet 22 is disposed near the periphery of the backing plate 21. At the center of the backing plate 21 is disposed a permanent magnet 23. These magnets 22 and 23 are magnetized such that they will have different polarities in the vertical direction in the drawing. Sheet shaped targets 24 made of ferromagnetic material such as permalloy are disposed on the surface of the backing plate 21 between the blocks 25 an 27.Blocks 25, 26a, 26b and 26c, for example, are made of metal material such as copper, stainless steel, aluminium or thin ferromagnetic material. An annular block 25 is disposed along the inner side of the annular magnet 22, and a plurality of spaced apart pillar shaped blocks 26a, 26b and 26c are disposed on the outside of the magnet 22. A ring shaped block 27 is provided to surround the central magnet 23.
An annular shields 28 is applied to cover the upper surfaces of both pole surfaces of the magnet 22 and the blocks 25 and 26.
The shield 28 is made of the same material as the targets 24, permalloy for example. A shield 29 also made of permalloy is mounted to cover the pole surface of the central magnet 23 and the block 27. Since the purpose of the magnets 22, 23 is to form magnetic field parallel with the targets in front of them, the magnets 22 and 23 should be polarized in the opposite directions. The backing plate 21 may be cooled with water.
After evacuating the vessel 11 with the vacuum pump to a pressure of 1 x 10-6 Torr for example, argon gas is introduced into the vessel to a pressure of 1 x 10-3 Torr to 1 X 10-2 Torr, and a high frequency of DC power is applied across the cathode and the evacuated vessel 11 to make the cathode negative potential that is cathode fall so as to create glow discharge between the cathode and the vessel 11. Since the lines of magnetic force cross perpendicularly with the electric field caused in the cathode fall, electrons in a plasma undergo magnetron motion to increase the chance of collision with argon atoms thus increasing the efficiency of ionization.Accordingly, the density of the plasma increases so that a large number of argon ions collide against the surfaces of the targets 24 and the shields 28, 29 whereby sputtered metal particles deposite on the substrate 1 6 so as to have high deposition rate.
The heat generated by target and shields 28 and 29 during the sputtering operation is rapidly removed through the backing plate 21, cathode supporter 12 and flowing water in pipe 1 3. By intimately contacting shields 28 and 29 against blocks 25, 26 and 27 and blocks 25, 26 and 27 against backing plate 21 and cathode supporter 12, the resistance against heat transfer can be reduced greatly thus improving the cooling effect. Accordingly, it is possible to prevent overheating of the permanent magnets which results in the degradation of the sputtering operation which has been inevitable in the prior art construction.
Fig. 2 shows a modification of the cathode assembly. In this modification, the targets 24A are embedded in the backing plate 21 provided with a cooling mechanism, and on the other portions of the backing plate 21 A are mounted an annular magnet 22, annular blocks 25, 26a and 26c, a central magnet 23, and a block 27 surrounding the magnet 23. The shields 28 and 29 covering the magnets 22, 23 and the blocks 25, 26, 27 are made of the same or similar material as the targets.
Fig. 3 shows still another modification of this invention in which a plate shaped target 34 serving a backing plate with a cooling mechanism (corresponding to the backing plate 21 shown in Fig. 2), and other elements are identical to those shown in Fig. 2. In this embodiment, since the target 34 sets as the backing plate,. the construction is simplified and the cooling effect is enhanced.
Fig. 4 illustrates still another embodiment of this invention which differs from that shown in Fig. 3 in that a letter E shaped yoke 40 made of a soft ferromagnetic material is disposed beneath the taget 34 made of ferromagnetic material. The central projection of the yoke 40 is disposed to oppose the central magnet 23 while the projections at both ends are disposed to oppose the annular magnet 22. The recesses 40a and 40b of the yoke 40 form passages for passing cooling water in a direction shown by arrows so as to cool the target 34 and the yoke 40.
Also with this construction, the heat generates by the shields 28 and 29 is transferred to the target 34 through blocks 25, 26 and 27 and removed by flowing water in the yoke 40.
Fig. 5 shows yet another modification of this invention. On the upper surface of a backing plate made of ferromagnetic material 21 are mounted an annular magnet 22 near the periphery, a central magnet 23, annular metal blocks 25 and 26A extending along the both sides of the magnet 22 and made of a metal having a high heat conductivity, a metal block 27 surrounding the magnet 23, and targets made of ferromagnetic material, permalloy for example. Magnets 22 and 23 are magnetized in the opposite directions in the vertical direction. A shield 28 made of the same or similar material as the targets 24 is mounted on the surfaces of the magnet 22 and the metal blocks 25 and 26, whereas a shield 29 also made of the same or similar material as the targets 24 is mounted on the surfaces of the magnet 23 and the metal block 27.At the centers of the metal blocks 25, 26A and 27 are formed water passages 25a, 26b, 26Aa, 26Ab, 27a and 27b respectively. As diagrammatically shown in Fig. 5, these water passages are connected to a common inlet port IN and a common outlet port OUT. These inlet port IN and outlet port OUT are respectively connected to the water passages 1 3a and 1 3b of the cathode supporter 12 shown in Fig. 1 so as to pass the cooling water.
With this construction, since the magnet 22, shields 28 and 29, magnet 23 and backing plate 21 form a magnetic flux circuit, so that air gaps between the shields 28 and 29 has a proper magnetic flux. The magnetic fields in these air gaps are formed in parallel with the target surfaces in front thereof. During the sputtering operation shields 28 and 29 generate heat, and the heat is removed by the cooling water flowing through the water passages 25a, 25b, 26Aa, 26Ab, 27a and 27b and absorbed by metal blocks 25, 26 and 27 having a high heat conductivity so that the temperature of the magnets 22 and 23 does not exceed a predetermined value.
This enables to apply a higher power to the targets 24 so as to increase the deposition rate.
The provision of metal blocks is effective to remove heat therethrough. Consequently, the deposition rate can be increased more than 3 times than a case not provided with the metal blocks where water passages are provided through the metal blocks as in this embodiment, the deposition rate can be increased further. Still other embodiments of this invention will be described with reference to Figs. 6 through 10.
In the embodiment shown in Fig. 6 the backing plate 21 shown in Fig. 5 is replaced by a target 34 of the same size, and a letter E shaped yoke 40 made of soft ferromagnetic material is disposed beneath the target 34.
Independent water passages 40a are formed between the yoke 40 and the rear surface of the target 34. Even when the target 34 wear as a result of sputtering, since the yoke 40 forms a magnetic flux circuit, the magnetic characteristic does not change, thus maintaining constant the sputtering characteristics.
In the embodiment shown in Fig. 7 metal blocks and magnets are mounted on a target plate, In this case, each shield 28 is constituted by a combination of member 28A and a member 28B, the members 28B being formed with water passages 28a and 28b.
Cooling water flows from the passage 29a to the passage 28b. In the same manner, a shield 29 is constituted by a member 29A and a recessed member 29B to from a water passage 29a which is connected to an inlet port and a outlet port, not shown. The metal blocks 25, 26A and 27 are not formed with any water passage. In this embodiment, since water passages are formed in the shields 28 and 29 which generate heat, the efficiency of heat absorption can be improved.
- In the embodiment shown in Fig. 8, the yoke 40 shown in Fig. 6 is combined with the embodiment shown in Fig. 6 to obtain the advantages of both embodiments.
In the embodiment shown in Fig. 9, metal blocks 25 and 26 have larger inner dimensions that the outer dimension of the magnet 22 and the heights of the metal blocks 25 and 26 are larger than the height of the magnet 22 so as to form gaps 50a and 50b utilized as water passages between the shields 28 and the metal blocks 25 and 26. Further, the inner dimensions and the height of the metal block 27 are made to be larger than those of the magnet 23 to form a gap 51 acting as a water passage between the shield 29, metal block 27 and magnet 23. According to this modification, since all of the magnet, metal blocks and shields which generate heat are directly in contact with water, the cooling effect is high. Moreover, as the upper surfaces and the side surfaces of the magnets 22, 23 are in contact with the cooling water, the magnets are efficiently cooled to stabilize its magnetic characteristics.
In the embodiment shown in Fig. 10 the yoke 40 shown in Fig. 6 is combined with the embodiment shown in Fig. 9 to combine the advantages of both embodiments.
It should be understood that many other modifications can be made within the scope of this invention.
The invention is not limited to various embodiments described above. For example, the shape and position of the metal blocks may be different from those shown in the drawings.

Claims (12)

1. Sputtering apparatus wherein a cathode including a target of ferromagnetic material and a substrate to be sputtered are disposed in an evacuated vessel in spaced confronting relationship so as to sputter said target with ions to form a thin magnetic film on said substrate, and wherein there are provided a magnet disposed adjacent the front of said target, a shield covering the front surface of said magnet facing said substrate, said shield being formed of the same or similar material as said target, a thermally conductive metal block substantially laterally surrounding said magnet and also covered by said shield, and a backing plate of ferromagnetic material which supports the magnet, the block and the shield.
2. Sputtering apparatus as claimed in claim 1 wherein said metal block is of copper, aluminium, stainless steel or thin ferromagnetic material.
3. Sputtering apparatus as claimed in claim 1 or claim 2 wherein said target is disposed on said backing plate to face said substrate to be sputtered.
4. Sputtering apparatus as claimed in claim 1 or claim 2 wherein said target is embedded in said backing plate.
5. Sputtering apparatus as claimed in claim 1 or claim 2 wherein said backing plate serves as said target.
6. Sputtering apparatus as claimed in any one of claims 1 to 5 wherein said metal block is provided with cooling water flow passages.
7. Sputtering apparatus as claimed in any one of claims 1 to 6 which further comprises a yoke of soft magnetic material and disposed in parallel with said target, said yoke forming a magnetic circuit together with said magnet.
8. Sputtering apparatus as claimed in claim 7 wherein said yoke has an E shaped sectional configuration, said magnet comprises at last two magnet members, one of the magnet members lying opposite a central projection of said yoke, while another said magnet member is annular in form and lied opposite projections on the opposite ends of said yoke.
9. Sputtering apparatus as claimed in claim 8 wherein spaces between said yoke projections form cooling water flow passages.
10. Sputtering apparatus as claimed in any one of claims 1 to 9 wherein said shield is provided with a cooling water flow passage.
11. Sputtering apparatus as claimed in any one of claims 1 to 10 wherein said magnet has less height than said metal block so as to define cooling water flow passages between said shield, said magnet and said metal block.
12. Sputtering apparatus substantially as described herein with reference to the accompanying drawings.
GB08231830A 1981-11-30 1982-11-08 Sputtering apparatus Expired GB2110719B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19236081A JPS5893872A (en) 1981-11-30 1981-11-30 Sputtering device
JP57102260A JPS58221275A (en) 1982-06-16 1982-06-16 Sputtering device

Publications (2)

Publication Number Publication Date
GB2110719A true GB2110719A (en) 1983-06-22
GB2110719B GB2110719B (en) 1985-10-30

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Application Number Title Priority Date Filing Date
GB08231830A Expired GB2110719B (en) 1981-11-30 1982-11-08 Sputtering apparatus

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DE (1) DE3244691C3 (en)
FR (1) FR2517330B1 (en)
GB (1) GB2110719B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2548826A1 (en) * 1983-07-06 1985-01-11 Leybold Heraeus Gmbh & Co Kg MAGNETRON CATHODE FOR CATHODIC SPRAY FACILITIES
US4601806A (en) * 1983-12-05 1986-07-22 Hans Zapfe Magnetron cathode for sputtering ferromagnetic targets
GB2173217A (en) * 1985-04-03 1986-10-08 Balzers Hochvakuum Target holder for cathodic sputtering
GB2331768A (en) * 1997-11-26 1999-06-02 Vapor Technologies Inc Apparatus for sputtering or arc evaporation including elongated rectangular target
WO2001022464A1 (en) * 1999-09-21 2001-03-29 Sli Lichtsysteme Gmbh Support material
US6569294B1 (en) * 1999-07-15 2003-05-27 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3442206A1 (en) * 1983-12-05 1985-07-11 Leybold-Heraeus GmbH, 5000 Köln Magnetron cathode for atomising ferromagnetic targets
DE3429988A1 (en) * 1983-12-05 1985-06-13 Leybold-Heraeus GmbH, 5000 Köln Magnetron cathode for sputtering ferromagnetic targets
DE19648390A1 (en) * 1995-09-27 1998-05-28 Leybold Materials Gmbh Target for the sputter cathode of a vacuum coating plant
DE19535894A1 (en) * 1995-09-27 1997-04-03 Leybold Materials Gmbh Target for the sputter cathode of a vacuum coating system and process for its production
DE19735469A1 (en) * 1997-08-16 1999-02-18 Leybold Materials Gmbh Target for a sputter cathode

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US4094761A (en) * 1977-07-25 1978-06-13 Motorola, Inc. Magnetion sputtering of ferromagnetic material
JPS5534689A (en) * 1978-09-04 1980-03-11 Anelva Corp Sputtering device
JPS5554570A (en) * 1978-10-16 1980-04-21 Anelva Corp Sputtering apparatus for magnetic thin film formation
JPS5580221A (en) * 1978-12-13 1980-06-17 Mitsubishi Electric Corp Key switch
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
JPS5616671A (en) * 1979-07-17 1981-02-17 Fujitsu Ltd Sputtering apparatus
US4299678A (en) * 1979-07-23 1981-11-10 Spin Physics, Inc. Magnetic target plate for use in magnetron sputtering of magnetic films
JPS5952957B2 (en) * 1980-06-16 1984-12-22 日電アネルバ株式会社 Cathode part of magnetron type sputtering equipment
JPH01293463A (en) * 1988-05-20 1989-11-27 Sharp Corp Character processor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2548826A1 (en) * 1983-07-06 1985-01-11 Leybold Heraeus Gmbh & Co Kg MAGNETRON CATHODE FOR CATHODIC SPRAY FACILITIES
GB2143255A (en) * 1983-07-06 1985-02-06 Leybold Heraeus Gmbh & Co Kg Magnetron cathode for cathodic evaporation installations
US4601806A (en) * 1983-12-05 1986-07-22 Hans Zapfe Magnetron cathode for sputtering ferromagnetic targets
GB2173217A (en) * 1985-04-03 1986-10-08 Balzers Hochvakuum Target holder for cathodic sputtering
GB2173217B (en) * 1985-04-03 1989-04-19 Balzers Hochvakuum Target holder for cathodic sputtering
GB2331768A (en) * 1997-11-26 1999-06-02 Vapor Technologies Inc Apparatus for sputtering or arc evaporation including elongated rectangular target
GB2331768B (en) * 1997-11-26 2003-03-05 Vapor Technologies Inc Apparatus for sputtering or arc evaporation
US6569294B1 (en) * 1999-07-15 2003-05-27 Seagate Technology Llc Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
WO2001022464A1 (en) * 1999-09-21 2001-03-29 Sli Lichtsysteme Gmbh Support material

Also Published As

Publication number Publication date
DE3244691C3 (en) 1997-04-03
GB2110719B (en) 1985-10-30
FR2517330A1 (en) 1983-06-03
DE3244691C2 (en) 1991-05-29
FR2517330B1 (en) 1985-06-28
DE3244691A1 (en) 1983-06-23

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 19961108