CN111719126A - Mo合金靶材及其制造方法 - Google Patents
Mo合金靶材及其制造方法 Download PDFInfo
- Publication number
- CN111719126A CN111719126A CN202010200463.8A CN202010200463A CN111719126A CN 111719126 A CN111719126 A CN 111719126A CN 202010200463 A CN202010200463 A CN 202010200463A CN 111719126 A CN111719126 A CN 111719126A
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- China
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- target material
- alloy
- powder
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- alloy target
- Prior art date
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- Pending
Links
- 239000013077 target material Substances 0.000 title claims abstract description 49
- 229910001182 Mo alloy Inorganic materials 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 37
- 238000005245 sintering Methods 0.000 claims description 24
- 239000011812 mixed powder Substances 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910003294 NiMo Inorganic materials 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 abstract description 24
- 238000004544 sputter deposition Methods 0.000 abstract description 17
- 230000002159 abnormal effect Effects 0.000 abstract description 8
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 238000003754 machining Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910000990 Ni alloy Inorganic materials 0.000 description 7
- 238000002438 flame photometric detection Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 238000009694 cold isostatic pressing Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 4
- 208000037584 hereditary sensory and autonomic neuropathy Diseases 0.000 description 4
- 229910001257 Nb alloy Inorganic materials 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910018559 Ni—Nb Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-052843 | 2019-03-20 | ||
| JP2019052843 | 2019-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111719126A true CN111719126A (zh) | 2020-09-29 |
Family
ID=72564095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010200463.8A Pending CN111719126A (zh) | 2019-03-20 | 2020-03-20 | Mo合金靶材及其制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7419886B2 (ja) |
| KR (1) | KR20200112716A (ja) |
| CN (1) | CN111719126A (ja) |
| TW (1) | TWI715467B (ja) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1660526A (zh) * | 2004-02-27 | 2005-08-31 | 日立金属株式会社 | 制备Mo合金制靶材料的方法 |
| JP2013067835A (ja) * | 2011-09-22 | 2013-04-18 | Spm Ag Semiconductor Parts & Materials | スパッタリングターゲット、トランジスタ、焼結体の製造方法、トランジスタの製造方法、電子部品または電気機器、液晶表示素子、有機ｅｌディスプレイ用パネル、太陽電池、半導体素子および発光ダイオード素子 |
| CN103173728A (zh) * | 2011-12-22 | 2013-06-26 | 日立金属株式会社 | Mo合金溅射靶材的制造方法以及Mo合金溅射靶材 |
| CN108242276A (zh) * | 2016-12-27 | 2018-07-03 | 日立金属株式会社 | 层叠布线膜及其制造方法以及Mo合金溅射靶材 |
| US20180187291A1 (en) * | 2015-06-29 | 2018-07-05 | Sanyo Special Steel Co., Ltd. | Sputtering Target Material |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008255440A (ja) | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | ＭｏＴｉ合金スパッタリングターゲット材 |
| JP5550328B2 (ja) | 2009-12-22 | 2014-07-16 | 株式会社東芝 | Ｍｏスパッタリングターゲットおよびその製造方法 |
| JP5988140B2 (ja) | 2011-06-07 | 2016-09-07 | 日立金属株式会社 | ＭｏＴｉターゲット材の製造方法およびＭｏＴｉターゲット材 |
| KR101600169B1 (ko) * | 2013-03-12 | 2016-03-04 | 히타치 긴조쿠 가부시키가이샤 | 전자 부품용 금속 박막 및 금속 박막 형성용 Mo 합금 스퍼터링 타깃재 |
| CN103143710B (zh) * | 2013-03-27 | 2015-12-23 | 宁夏东方钽业股份有限公司 | 一种钼合金靶材的制作方法 |
| JP6602550B2 (ja) | 2014-04-28 | 2019-11-06 | 株式会社アライドマテリアル | スパッタリングターゲット用材料 |
-
2020
- 2020-03-06 JP JP2020038881A patent/JP7419886B2/ja active Active
- 2020-03-18 TW TW109108867A patent/TWI715467B/zh active
- 2020-03-19 KR KR1020200033612A patent/KR20200112716A/ko not_active Application Discontinuation
- 2020-03-20 CN CN202010200463.8A patent/CN111719126A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1660526A (zh) * | 2004-02-27 | 2005-08-31 | 日立金属株式会社 | 制备Mo合金制靶材料的方法 |
| JP2013067835A (ja) * | 2011-09-22 | 2013-04-18 | Spm Ag Semiconductor Parts & Materials | スパッタリングターゲット、トランジスタ、焼結体の製造方法、トランジスタの製造方法、電子部品または電気機器、液晶表示素子、有機ｅｌディスプレイ用パネル、太陽電池、半導体素子および発光ダイオード素子 |
| CN103173728A (zh) * | 2011-12-22 | 2013-06-26 | 日立金属株式会社 | Mo合金溅射靶材的制造方法以及Mo合金溅射靶材 |
| US20180187291A1 (en) * | 2015-06-29 | 2018-07-05 | Sanyo Special Steel Co., Ltd. | Sputtering Target Material |
| CN108242276A (zh) * | 2016-12-27 | 2018-07-03 | 日立金属株式会社 | 层叠布线膜及其制造方法以及Mo合金溅射靶材 |
Non-Patent Citations (1)
| Title |
|---|
| 李月珠: "《快速凝固技术和材料》", 30 November 1993, 国防工业出版社, pages: 246 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200112716A (ko) | 2020-10-05 |
| JP7419886B2 (ja) | 2024-01-23 |
| TW202035753A (zh) | 2020-10-01 |
| TWI715467B (zh) | 2021-01-01 |
| JP2020158881A (ja) | 2020-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Tokyo, Japan Applicant after: Bomeilicheng Co.,Ltd. Address before: Tokyo, Japan Applicant before: HITACHI METALS, Ltd. |