CN111719126A - Mo alloy target material and manufacturing method thereof - Google Patents
Mo alloy target material and manufacturing method thereof Download PDFInfo
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- CN111719126A CN111719126A CN202010200463.8A CN202010200463A CN111719126A CN 111719126 A CN111719126 A CN 111719126A CN 202010200463 A CN202010200463 A CN 202010200463A CN 111719126 A CN111719126 A CN 111719126A
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- 239000013077 target material Substances 0.000 title claims abstract description 49
- 229910001182 Mo alloy Inorganic materials 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 37
- 238000005245 sintering Methods 0.000 claims description 24
- 239000011812 mixed powder Substances 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910003294 NiMo Inorganic materials 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 abstract description 24
- 238000004544 sputter deposition Methods 0.000 abstract description 17
- 230000002159 abnormal effect Effects 0.000 abstract description 8
- 238000005299 abrasion Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 238000003754 machining Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910000990 Ni alloy Inorganic materials 0.000 description 7
- 238000002438 flame photometric detection Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 238000009694 cold isostatic pressing Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 4
- 208000037584 hereditary sensory and autonomic neuropathy Diseases 0.000 description 4
- 229910001257 Nb alloy Inorganic materials 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910018559 Ni—Nb Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention relates to a Mo alloy target material and a manufacturing method thereof. The present invention provides a Mo alloy target material which can simultaneously inhibit target material deformation, cutting head abrasion and damage of cutting tools in clamping, jointing and other operations, and inhibit abnormal discharge in sputtering, and is useful for manufacturing FPD and the like. A Mo alloy target material containing 10 to 49 at% of Ni and 1 to 30 at% of Nb, wherein the total amount of Ni and Nb is 50 at% or less, and the balance being Mo and unavoidable impurities; the Vickers hardness of the Mo alloy target material is 290-460 HV, and the deviation [ (maximum value-minimum value)/(maximum value + minimum value) ] x 100 (%) is less than 20%.
Description
Technical Field
The present invention relates to a Mo alloy target material for forming, for example, an electrode or a wiring thin film for an electronic component, and a method for producing the Mo alloy target material.
Background
In Flat Display devices such as electrophoretic displays (Flat Panel displays, hereinafter referred to as FPDs), various semiconductor devices, thin film sensors, and thin film electronic components such as magnetic heads, wiring films having low resistance values (hereinafter referred to as low resistance) are required. For example, with a large screen, high definition, and fast response, wiring films of FPDs are required to have a low resistance. In recent years, new products such as a touch panel that has increased operability in an FPD, and a flexible FPD that uses a resin substrate have been developed.
A wiring Thin film of a Thin film transistor (hereinafter, referred to as a TFT) used as a driving element of an FPD needs to have low resistance, and an Al wiring material is used.
At present, when an amorphous Si semiconductor film is used in a TFT and Al as a wiring film is in direct contact with Si, thermal diffusion occurs due to a heating step in TFT manufacturing, and TFT characteristics deteriorate. Therefore, a laminated wiring film in which Mo or a Mo alloy having excellent heat resistance is used as a barrier film between Al and Si as a coating film is used.
Further, application studies of a transparent semiconductor film using an oxide which can achieve faster response than a conventional amorphous Si semiconductor film have been conducted, and a wiring film having a structure in which a wiring film of an oxide semiconductor is further laminated with a wiring film formed of Al, a base film formed of Mo or Mo alloy, or a cap film has been studied. Therefore, a thin film made of a Mo alloy used for forming these multilayer wiring films is in high demand.
Further, as a Mo alloy thin film having high oxidation resistance and suitable for mobile equipment and in-vehicle equipment, a Mo — Ni — Nb alloy has been proposed.
On the other hand, as a method for forming the Mo alloy thin film, a sputtering method using a sputtering target (hereinafter, simply referred to as "target") is most suitable. The sputtering method is one of physical vapor deposition methods, and is a method capable of stably forming a Mo alloy thin film over a large area as compared with other vacuum vapor deposition and ion plating methods, and is an effective method capable of obtaining an excellent Mo alloy thin film with little compositional variation even in an alloy containing a large amount of the above-described additive elements.
As a method for obtaining the above-described target material made of a Mo — Ni — Nb alloy, for example, patent document 1 proposes a method of applying a machining process to a sintered body obtained by mixing a Mo powder and one or more Ni alloy powders, or a sintered body obtained by pressure sintering a mixed powder obtained by mixing a Mo powder, a Ni alloy powder, and a Nb powder.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2013-147734
Disclosure of Invention
Problems to be solved by the invention
As disclosed in patent document 1, when a target material is produced by pressure sintering a mixed powder obtained by mixing Mo powder, Ni alloy, and Nb powder by hot isostatic pressing (hereinafter referred to as "HIP"), a portion having low local hardness may be present in the target material. Therefore, the target body may be deformed in operations such as clamping and bonding when machining the target into a predetermined shape and size.
Further, the Mo — Ni — Nb alloy is a so-called difficult-to-cut material having a high possibility of causing cracks, defects, and detachment at the time of machining, and when a portion having a high local hardness is present in the target material, the blade of the cutting tool is worn or damaged, and the surface roughness of the obtained target material is increased, or in some cases, the target material body is damaged.
Further, when a portion having a low local hardness is present in the erosion region in the central portion of the sputtering surface of the target, only the portion having a low hardness remains, or only the portion having a low hardness comes off, and the surface roughness of the erosion region becomes rough, which is likely to become a starting point of abnormal discharge during sputtering.
The present invention aims to provide a Mo alloy target material that can simultaneously suppress deformation of the target material, wear of a cutting tip of a cutting tool, and damage during operations such as clamping and bonding, and suppress abnormal discharge during sputtering.
Means for solving the problems
The Mo alloy target material contains 10-49 atom% of Ni and 1-30 atom% of Nb, wherein the total amount of Ni and Nb is less than 50 atom%, and the balance is Mo and inevitable impurities; the Vickers hardness of the Mo alloy target is 290-460 HV, and the variation of the Vickers hardness measured by 9 measuring points is less than 20%.
The Mo alloy target of the present invention can be obtained by a manufacturing method including the steps of: a step of mixing Mo powder, NiMo alloy powder and Nb powder so as to contain 10 to 49 at% of Ni and 1 to 30 at% of Nb, the total amount of Ni and Nb being 50 at% or less, and the balance being Mo and unavoidable impurities, thereby obtaining a mixed powder; a step of pressurizing the mixed powder at room temperature to obtain a molded body; and a step of subjecting the molded body to pressure sintering to obtain a sintered body.
ADVANTAGEOUS EFFECTS OF INVENTION
The invention can provide the Mo alloy target material with the Vickers hardness adjusted. This can be expected to simultaneously suppress deformation of the target material, wear of the cutting tip of the cutting tool, and damage during operations such as clamping and bonding, and suppress abnormal discharge during sputtering. Therefore, the technique is useful for manufacturing the FPD and the like.
Drawings
FIG. 1 is an optical microscopic photograph of a sputtering surface of a target material in example 1 of the present invention.
Fig. 2 is an optical microscope observation photograph of the sputtering surface of the target of the comparative example.
Detailed Description
The target material of the present invention has a Vickers hardness of 290 to 460HV as defined in JIS Z2244, and has a variation in Vickers hardness of 20% or less as measured at 9 measurement points. The target material of the present invention can suppress deformation of the target material body in operations such as clamping and bonding in machining by setting vickers hardness to a specific range and reducing the deviation [ (maximum value-minimum value)/(maximum value + minimum value) ] × 100 (%). In addition, the target according to the embodiment of the present invention preferably has a variation in vickers hardness of 10% or less, which is measured at any of 9 measurement points.
In addition, the target material of the present invention can suppress the generation of build-up (build-up edge) on a tool bit of, for example, a milling machine, a lathe, or the like by adjusting the vickers hardness to a specific range. That is, the target material of the present invention can suppress the gradual increase in the depth of the cutting tip accompanying the growth of the built-up edge as the cutting process is performed, reduce the difference in the size between the target material at the start of cutting and the target material at the completion of cutting, and suppress the breakage of the cutting tip accompanying the separation of the built-up edge.
On the other hand, if a local low-hardness portion composed of, for example, a Mo matrix phase or MoNb phase is present in the erosion region in the central portion of the sputtering surface of the target, only the low-hardness portion may remain or fall off, the surface of the erosion region of the target may become rough, and this may easily become a starting point of abnormal discharge during sputtering. Therefore, the vickers hardness of the target of the present invention is set to 290HV or more. For the same reason as described above, the vickers hardness of the target according to the embodiment of the present invention is preferably 295HV or more.
By setting the vickers hardness of the target material of the present invention to 460HV or less, the amount of wear of the tool bit of, for example, a milling machine, a lathe, or the like can be suppressed. That is, the target material of the present invention can suppress the size difference between the target material at the start of cutting and at the completion of cutting from becoming large as the depth of the cutting tip gradually decreases with the wear of the cutting tip as the cutting process progresses; and also can suppress the breakage of the tip.
Further, the vickers hardness of the target material of the present invention is set to 460HV or less, so that the target material body can be prevented from being damaged in operations such as clamping by a cutting machine and joining to a backing plate and a backing tube. For the same reason as described above, the vickers hardness of the target according to the embodiment of the present invention is preferably 455HV or less.
The vickers hardness in the present invention was measured at arbitrary 9 points in the vicinity of 1.5mm in the center of the sputtering surface of the target material, from the viewpoints of suppressing the deformation of the target material, the wear and damage of the cutting tip of the cutting tool, and the suppression of abnormal discharge during sputtering. At this time, the load was set to 9.8N, and the pressing time was set to 10 seconds.
The target material of the present invention has a vickers hardness in the range of 290 to 460HV measured under the above conditions, and the deviation [ (maximum-minimum)/(maximum + minimum) ] x 100 (%) is 20% or less.
The target according to the embodiment of the present invention is preferably composed of a Mo-Ni-Nb alloy phase in view of the Vickers hardness of 290 to 460 HV.
The target material of the present invention has the following composition: contains 10 to 49 at% of Ni and 1 to 30 at% of Nb, and contains unavoidable impurities in such a manner that the total amount of Ni and Nb is 50 at% or less and the total of Ni, Nb and Mo is 100 at%. The contents of Ni and Nb are defined in a range that does not significantly impair adhesion, oxidation resistance, and moisture resistance.
The content of Ni is 10 atomic% or more, and an oxidation suppression effect can be obtained. Further, Ni is an element that is more easily thermally diffused into Cu and Al than Mo, and may increase the resistance value. Therefore, the Ni content is 49 atomic% or less. For the same reason as described above, the content of Ni is preferably 30 at% or less, and more preferably 20 at% or less.
The moisture resistance can be improved by setting the content of Nb to 1 atomic% or more. Further, by setting Nb to 30 atomic% or less and setting the total of Ni and Nb to 50 atomic% or less, corrosion resistance is improved and etching properties can be secured. For the same reason as described above, the content of Nb is preferably 20 at% or less, and more preferably 15 at% or less.
The target material of the present invention can be obtained by the following production method, and a general mode thereof will be described. The present invention is not limited to the following embodiments.
First, a Mo powder, a NiMo alloy powder and a Nb powder are mixed so that the total amount of Ni and Nb is 50 at% or less and the balance is Mo and unavoidable impurities, and the mixed powder is obtained, the Ni powder being 10 to 49 at% Ni and 1 to 30 at% Nb. Then, the mixed powder is pressed at normal temperature (20 ± 15 ℃ as defined in JIS Z8703), for example, by cold isostatic pressing (hereinafter, referred to as CIP) to prepare a compact.
Next, the compact is pressure-sintered to obtain a sintered body, and machining is performed on the sintered body, thereby obtaining the target material of the present invention. Here, in the method for manufacturing a target according to the embodiment of the present invention, after the step of obtaining the above-described sintered body by applying the conditions of pressure sintering described later, the target with the adjusted vickers hardness can be obtained without performing the heat treatment for removing the residual stress of the target and adjusting the vickers hardness.
In the target according to the embodiment of the present invention, it is preferable that the method for producing the target includes a step of obtaining the above-mentioned sintered body by including a "step of obtaining a pulverized powder by pulverizing the above-mentioned compact" prior to the step of obtaining the above-mentioned sintered body, and the sintered body is obtained by pressure sintering the pulverized powder, from the viewpoint of effectively reducing variation in vickers hardness of the entire target. Preferably, for example, the above-mentioned compact is first pulverized by a disk mill or the like to prepare a pulverized powder having a particle size of 1.5mm or less, the pulverized powder is pressure-sintered to obtain a sintered body, and the sintered body is subjected to machining.
The pressure sintering can be performed by HIP and hot pressing, preferably at 800-1400 ℃, 10-200 MPa and 1-10 hours. The selection of these conditions depends on the apparatus in which the pressure sintering is carried out. For example, in the case of HIP, conditions of low temperature and high pressure are easily applied, and in the case of hot pressing, conditions of high temperature and low pressure are easily applied. In the production method of the present invention, HIP that can be sintered at a low temperature to suppress diffusion of Ni alloy and Nb and can be sintered at a high pressure to obtain a high-density sintered body is preferably used in the pressure sintering.
The sintering temperature is set to 800 ℃ or higher, whereby sintering can be promoted and a high-density sintered body can be obtained. For the same reason as described above, the sintering temperature is preferably 1000 ℃.
On the other hand, by setting the sintering temperature to 1400 ℃ or lower, occurrence of a liquid phase and crystal growth of the sintered body can be suppressed, and a uniform and fine metallographic structure can be obtained. For the same reason as described above, the sintering temperature is preferably 1300 ℃ or lower.
The pressurizing force is set to 10MPa or more, whereby sintering can be promoted and a high-density sintered body can be obtained. Further, by setting the pressing force to 200MPa or less, introduction of residual stress into the target during sintering can be suppressed, occurrence of cracks after sintering can be suppressed, and a general-purpose pressure sintering apparatus can be used.
By setting the sintering time to 1 hour or more, sintering can be sufficiently promoted, and a sintered body with high density can be obtained. Further, the sintering time is set to 10 hours or less, so that the reduction of the production efficiency can be suppressed.
Examples
A mixed powder was obtained by mixing Mo powder having a volume-based cumulative particle size distribution of 50% particle diameter (hereinafter referred to as "D50") of 7 μm, NiMo alloy powder having a D50 of 35 μm, and Nb powder having a D50 of 110 μm so as to contain 30 at% of Ni, 15 at% of Nb, and the balance of Mo and unavoidable impurities.
Then, the mixed powder was charged into a rubber mold and the molding pressure was set to 2.7 ton/cm2The CIP treatment was carried out under the conditions of (. apprxeq.2.65 MPa) to obtain a molded article.
Next, the compact obtained as described above was placed in a furnace of a HIP apparatus, and pressure sintering was performed at 1250 ℃, 120MPa, and 10 hours to obtain a Mo alloy sintered body serving as a target material of example 1 of the present invention.
A mixed powder was obtained by mixing Mo powder having a volume-based cumulative particle size distribution of 50% particle diameter (hereinafter referred to as "D50") of 7 μm, NiMo alloy powder having a D50 of 35 μm, and Nb powder having a D50 of 110 μm so as to contain 49 atom% of Ni, 1 atom% of Nb, and the balance of Mo and unavoidable impurities.
Then, the mixed powder was charged into a rubber mold and the molding pressure was set to 2.7 ton/cm2The CIP treatment was carried out under the conditions of (. apprxeq.2.65 MPa) to obtain a molded article. The molded article was pulverized by a disk mill to obtain a pulverized powder having a particle size of 1.5mm or less.
Next, the pulverized powder obtained as described above was placed in a furnace body of a HIP apparatus, and pressure sintering was performed at 1250 ℃, 120MPa, and 10 hours, to obtain a Mo alloy sintered body serving as a target material of example 2 of the present invention.
A mixed powder was obtained by mixing Mo powder having a volume-based cumulative particle size distribution of 50% particle diameter (hereinafter referred to as "D50") of 7 μm, NiMo alloy powder having a D50 of 35 μm, and Nb powder having a D50 of 110 μm so as to contain 10 atomic% of Ni, 10 atomic% of Nb, and the balance of Mo and unavoidable impurities.
Then, the mixed powder was charged into a rubber mold and the molding pressure was set to 2.7 ton/cm2The CIP treatment was carried out under the conditions of (. apprxeq.2.65 MPa) to obtain a molded article. The molded article was pulverized by a disk mill to obtain a pulverized powder having a particle size of 1.5mm or less.
Next, the pulverized powder obtained as described above was placed in a furnace body of a HIP apparatus, and pressure sintering was performed at 1250 ℃, 120MPa, and 10 hours, to obtain a Mo alloy sintered body serving as a target material of example 3 of the present invention.
A mixed powder was obtained by mixing Mo powder having a D50 of 7 μm, NiMo alloy powder having a D50 of 35 μm, and Nb powder having a D50 of 110 μm so as to contain 30 at% of Ni, 15 at% of Nb, and the balance of Mo and inevitable impurities.
Then, the mixed powder was filled in a pressure vessel made of low carbon steel, set inside a furnace body of a HIP device, and pressure-sintered at 1250 ℃, 120MPa, and 10 hours to obtain a Mo alloy sintered body serving as a target of a comparative example.
A test piece was collected by machining from an arbitrary position on the surface as the sputtering surface of each of the sintered bodies obtained as described above. The vickers hardness was measured at measurement points corresponding to the 9 points shown in fig. 1 and 2, using MVK-E manufactured by mitsubishi corporation in accordance with JIS Z2244. The results are shown in Table 1.
Here, it was confirmed that the Mo alloy sintered body of the present invention was not worn or damaged by the cutting edge in the machining for forming the shape of the target. In addition, since the Mo alloy sintered compact does not fall off in this machining, it is also expected that abnormal discharge during sputtering can be suppressed. Further, the Mo alloy sintered compact is not deformed or damaged even in an operation such as clamping by a cutting machine.
On the other hand, the Mo alloy sintered body of the comparative example was worn or damaged in the machining for forming the shape of the target. In addition, in this machining, the Mo alloy sintered body was confirmed to be detached.
[ Table 1]
Fig. 1 and 2 show the results of observing the metallographic structure of the surface of each target material, which is the sputtering surface, with an optical microscope.
The target material used in the comparative example was a microstructure in which coarse Ni alloy phases indicated by light gray portions were dispersed in Mo phases serving as matrix shown in fig. 2, and it was confirmed that the vickers hardness was higher than 460HV, and the deviation [ (maximum value-minimum value)/(maximum value + minimum value) ] × 100 (%) was higher than 20%.
On the other hand, it was confirmed that the target material of example 1 of the present invention was obtained by finely dispersing the Ni alloy phase shown in the light gray portion of fig. 1, and the vickers hardness was adjusted to the range of 290 to 460HV and the deviation [ (maximum-minimum)/(maximum + minimum) ] x 100 (%) was adjusted to 20% or less, without the coarse Ni alloy phase observed in the comparative example. Accordingly, the target material of the present invention is expected to suppress deformation of the target material, wear of the cutting tip of the cutting tool, and damage during operation, and to suppress generation of an abnormal discharge starting point during sputtering.
Claims (2)
1. A Mo alloy target material containing 10 to 49 at% of Ni and 1 to 30 at% of Nb, wherein the total amount of Ni and Nb is 50 at% or less, and the balance being Mo and unavoidable impurities; the Vickers hardness of the Mo alloy target is 290-460 HV, and the variation of the Vickers hardness measured by 9 measuring points is less than 20%.
2. A manufacturing method of a Mo alloy target material comprises the following steps: a step of mixing Mo powder, NiMo alloy powder and Nb powder so as to contain 10 to 49 at% of Ni and 1 to 30 at% of Nb, the total amount of Ni and Nb being 50 at% or less, and the balance being Mo and unavoidable impurities, thereby obtaining a mixed powder; a step of pressurizing the mixed powder at room temperature to obtain a molded body; and a step of subjecting the compact to pressure sintering to obtain a sintered body.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019052843 | 2019-03-20 | ||
| JP2019-052843 | 2019-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111719126A true CN111719126A (en) | 2020-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010200463.8A Pending CN111719126A (en) | 2019-03-20 | 2020-03-20 | Mo alloy target material and manufacturing method thereof |
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|---|---|
| JP (1) | JP7419886B2 (en) |
| KR (1) | KR20200112716A (en) |
| CN (1) | CN111719126A (en) |
| TW (1) | TWI715467B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1660526A (en) * | 2004-02-27 | 2005-08-31 | 日立金属株式会社 | Process of mfg. Mo alloyed targeting materials |
| JP2013067835A (en) * | 2011-09-22 | 2013-04-18 | Spm Ag Semiconductor Parts & Materials | Sputtering target, transistor, method for manufacturing sintered body, method for manufacturing transistor, electronic component or electric equipment, liquid crystal display element, panel for organic el display, solar cell, semiconductor element, and light emitting diode element |
| CN103173728A (en) * | 2011-12-22 | 2013-06-26 | 日立金属株式会社 | Manufacturing method of Mo alloy sputtering target materials and sputtering target materials |
| CN108242276A (en) * | 2016-12-27 | 2018-07-03 | 日立金属株式会社 | Wiring membrane and its manufacturing method and Mo alloy sputtering targets is laminated |
| US20180187291A1 (en) * | 2015-06-29 | 2018-07-05 | Sanyo Special Steel Co., Ltd. | Sputtering Target Material |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008255440A (en) | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | MoTi ALLOY SPUTTERING TARGET MATERIAL |
| JP5550328B2 (en) | 2009-12-22 | 2014-07-16 | 株式会社東芝 | Mo sputtering target and manufacturing method thereof |
| JP5988140B2 (en) | 2011-06-07 | 2016-09-07 | 日立金属株式会社 | Manufacturing method of MoTi target material and MoTi target material |
| KR101600169B1 (en) * | 2013-03-12 | 2016-03-04 | 히타치 긴조쿠 가부시키가이샤 | METAL THIN FILM FOR ELECTRONIC COMPONENT AND Mo ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METAL THIN FILM |
| CN103143710B (en) * | 2013-03-27 | 2015-12-23 | 宁夏东方钽业股份有限公司 | A kind of preparation method of molybdenum alloy target |
| JP6602550B2 (en) | 2014-04-28 | 2019-11-06 | 株式会社アライドマテリアル | Material for sputtering target |
-
2020
- 2020-03-06 JP JP2020038881A patent/JP7419886B2/en active Active
- 2020-03-18 TW TW109108867A patent/TWI715467B/en active
- 2020-03-19 KR KR1020200033612A patent/KR20200112716A/en not_active Application Discontinuation
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1660526A (en) * | 2004-02-27 | 2005-08-31 | 日立金属株式会社 | Process of mfg. Mo alloyed targeting materials |
| JP2013067835A (en) * | 2011-09-22 | 2013-04-18 | Spm Ag Semiconductor Parts & Materials | Sputtering target, transistor, method for manufacturing sintered body, method for manufacturing transistor, electronic component or electric equipment, liquid crystal display element, panel for organic el display, solar cell, semiconductor element, and light emitting diode element |
| CN103173728A (en) * | 2011-12-22 | 2013-06-26 | 日立金属株式会社 | Manufacturing method of Mo alloy sputtering target materials and sputtering target materials |
| US20180187291A1 (en) * | 2015-06-29 | 2018-07-05 | Sanyo Special Steel Co., Ltd. | Sputtering Target Material |
| CN108242276A (en) * | 2016-12-27 | 2018-07-03 | 日立金属株式会社 | Wiring membrane and its manufacturing method and Mo alloy sputtering targets is laminated |
Non-Patent Citations (1)
| Title |
|---|
| 李月珠: "《快速凝固技术和材料》", 30 November 1993, 国防工业出版社, pages: 246 * |
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| TWI715467B (en) | 2021-01-01 |
| JP2020158881A (en) | 2020-10-01 |
| KR20200112716A (en) | 2020-10-05 |
| JP7419886B2 (en) | 2024-01-23 |
| TW202035753A (en) | 2020-10-01 |
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