CN111672808A - Cleaning mechanism for ICP plasma etching - Google Patents
Cleaning mechanism for ICP plasma etching Download PDFInfo
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- CN111672808A CN111672808A CN202010557666.2A CN202010557666A CN111672808A CN 111672808 A CN111672808 A CN 111672808A CN 202010557666 A CN202010557666 A CN 202010557666A CN 111672808 A CN111672808 A CN 111672808A
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- cleaning
- box
- inner cavity
- feeding
- fixedly connected
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/001—Handling, e.g. loading or unloading arrangements
- F26B25/003—Handling, e.g. loading or unloading arrangements for articles
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/14—Drying solid materials or objects by processes not involving the application of heat by applying pressure, e.g. wringing; by brushing; by wiping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a cleaning mechanism for ICP plasma etching, which comprises a feeding box, wherein a feeding mechanism is arranged in an inner cavity of the feeding box, a first material guide mechanism is arranged in an inner cavity on the left side of the feeding box, and the feeding mechanism comprises two guide sliding chutes arranged on the front side and the rear side of the inner cavity of the feeding box. According to the cleaning mechanism for ICP plasma etching, the silicon wafers in the inner cavity of the feeding box are transferred to the inner cavity of the cleaning box to be cleaned through the matching use of the feeding mechanism and the material guide mechanism, and finally the silicon wafers are cleaned through the arrangement of the cleaning mechanism, so that the purposes of automatic feeding, comprehensive cleaning and automatic cleaning and dewatering can be achieved.
Description
Technical Field
The invention relates to the technical field of ICP plasma etching, in particular to a cleaning mechanism for ICP plasma etching.
Background
Plasma etchers, also known as plasma etchers, plasma surface treatment machines, plasma cleaning systems, and the like, are the most common form of dry etching, and the principle of plasma etching is that gas exposed to an electron region forms a plasma, and ionized gas and gas composed of released high-energy electrons are generated, so that plasma or ions are formed, when ionized gas atoms are accelerated by an electric field, enough force is released to tightly adhere materials or etch surfaces with surface expulsion force, and to some extent, plasma cleaning is a light condition of plasma etching, and equipment for performing an etching process essentially comprises a reaction chamber, a power supply, and a vacuum part.
In the process of etching a silicon wafer by using an etching machine, if foreign matters exist on the surface of the silicon wafer, the etching position can shift during etching, the surface of the silicon wafer is mostly simply cleaned manually in the conventional cleaning mode for the silicon wafer, the cleaning effect is poor in the cleaning mode, the risk of omission is high when the surface of the silicon wafer is manually cleaned, the manual cleaning efficiency is low, and time and labor are wasted.
Disclosure of Invention
The invention aims to provide a cleaning mechanism for ICP plasma etching, which has the advantages of automatic feeding, comprehensive cleaning and automatic wiping and dewatering, and solves the problems that the existing cleaning mode for silicon wafers is poor in cleaning effect, the surface of the silicon wafer is mostly and simply wiped manually, the cleaning mode has high omission risk when the surface of the silicon wafer is wiped manually, and the problems that manual wiping is low in efficiency and time and labor are wasted.
In order to achieve the purpose, the invention provides the following technical scheme: the cleaning mechanism comprises a feeding box, a feeding mechanism is arranged in an inner cavity of the feeding box, a first material guide mechanism is arranged in an inner cavity of the left side of the feeding box, the feeding mechanism comprises two guide sliding chutes which are formed in the front side and the rear side of the inner cavity of the feeding box, a sliding push block is connected to the inner cavity of each guide sliding chute in a sliding mode, a push strip is fixedly connected to the right side of the top of each sliding push block, two tension springs are welded to the bottom of the left side of each sliding push block, the left ends of the tension springs are welded to the inner wall of the feeding box, a feeding rotating column is arranged in the inner cavity of the feeding box, the rear end of the feeding rotating column is rotatably connected with the feeding box through a bearing, the front end of the feeding rotating column penetrates through the front side of the feeding box and is fixedly connected with a first stressed belt disc, a semicircular rotary disc is fixedly connected to the surface, the surface of the semicircular rotary disc is in rolling connection with the roller, a discharge through hole is formed in the left side of the inner cavity of the feeding box, the left side of the feeding box is fixedly connected with a cleaning box, an inner cavity of the cleaning box is provided with a material conveying mechanism, the top of the cleaning box and the bottom of the inner cavity are both fixedly connected with a cleaning nozzle, the left side of the cleaning box is fixedly connected with a cleaning box, the right side of the inner cavity of the cleaning box is provided with a material guide mechanism II, the left side of the inner cavity of the cleaning box is provided with a cleaning mechanism, the cleaning mechanism comprises a pressing plate which is connected to the left side of the inner cavity of the cleaning box in a sliding manner, the front side and the rear side of the inner cavity of the cleaning box are both provided with limiting through holes for the pressing plate to slide, the bottom of the pressing plate is fixedly connected with a, the top end of the second spring is welded with the top of the inner cavity of the limiting through hole.
Preferably, pass the material mechanism and rotate post and four supplementary material posts of passing including four biography materials that are located washing incasement chamber, pass the material and rotate the front end of post and run through to the front side of washing case and fixedly connected with and pass the material pulley, pass the material and rotate the inner wall rotation connection of post through bearing and washing case, supplementary front end and the rear end of passing the material post all rotate through bearing and the inner wall of washing case and be connected.
Preferably, the first material guiding mechanism comprises a first material guiding rotating column located at the top and the bottom of the left side of the upper material box, the first material guiding rotating column is fixedly connected with a roller, the front end and the rear end of the first top material guiding rotating column are rotatably connected with a first rectangular sliding block, a first rectangular through hole for sliding the first rectangular sliding block is formed in the left side of the front surface and the left side of the back surface of the upper material box, a first spring is welded to the top of the first rectangular sliding block, and the top of the first spring is welded to the top of an inner cavity of the first rectangular through hole.
Preferably, the second guide mechanism comprises a second guide rotating column located at the top and the bottom of the inner cavity of the wiping box, the second guide rotating column is fixedly connected with a roller, the front end and the rear end of the second top guide rotating column are rotatably connected with a second rectangular sliding block, a second rectangular through hole for sliding the second rectangular sliding block is formed in the front side and the rear side of the inner cavity of the wiping box, a third spring is welded to the top of the second rectangular sliding block, the top end of the third spring is welded to the top of the inner cavity of the second rectangular through hole, and the front end of the second bottom guide rotating column penetrates through the front side of the wiping box and is fixedly connected with a wiping belt disc.
Preferably, the front end of the first bottom material guiding rotating column penetrates through the front side of the upper material box and is fixedly connected with a driving belt pulley, and two annular grooves are formed in the surface of the driving belt pulley.
Preferably, the left side of the front surface of the feeding box is fixedly connected with a motor, and an output shaft of the motor is fixedly connected with a driving belt pulley.
Preferably, the driving belt pulley and the four material conveying belt pulleys are connected through belt transmission, and the driving belt pulley, the first stressed belt pulley and the wiping belt pulley are connected through belt transmission.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the ICP plasma etching cleaning mechanism, the silicon wafer in the inner cavity of the feeding box is transferred to the inner cavity of the cleaning box through the matching use of the feeding mechanism and the first material guide mechanism, the inner cavity of the cleaning box is cleaned, then the silicon wafer is transferred to the inner cavity of the cleaning box through the matching use of the feeding mechanism and the second material guide mechanism, and finally the silicon wafer is cleaned through the arrangement of the cleaning mechanism, so that the purposes of automatic feeding, comprehensive cleaning and automatic cleaning and dehydration can be achieved.
2. According to the silicon wafer conveying and cleaning device, the silicon wafer is conveyed and cleaned through the arrangement of the material conveying mechanism, wherein the material conveying rotating column and the auxiliary material conveying column are matched for use.
3. According to the silicon wafer discharging device, the first material guiding mechanism is arranged, the first material guiding rotating column is matched with the first roller for use, the silicon wafers pushed out from the inner cavity of the discharging through hole are transmitted leftwards, the first rectangular sliding block is matched with the first spring for use, so that the top roller has a certain downward pressure on the silicon wafers, and then the rotation of the first bottom roller can enable the silicon wafers to move leftwards.
4. According to the invention, through the arrangement of the second material guide mechanism, the second material guide rotating column is matched with the second roller for use, so that the silicon wafer is transferred leftwards, and the second rectangular sliding block is matched with the third spring for use, so that the top roller exerts a certain downward pressure on the silicon wafer, and then the rotation of the second bottom roller can enable the silicon wafer to move leftwards, so that the silicon wafer can be pushed between the first cleaning cotton and the second cleaning cotton for wiping.
5. According to the invention, through the arrangement of the driving belt pulley, the material conveying belt pulley, the wiping belt pulley and the stressed belt pulley can be driven to synchronously rotate through one driving belt pulley, so that on one hand, the operation synchronism among the structures of the cleaning mechanism is improved, and on the other hand, the production cost of the cleaning mechanism is reduced.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a schematic cross-sectional perspective view of the loading box of the present invention;
FIG. 3 is a schematic three-dimensional exploded view of a first feeding mechanism and a first material guiding mechanism of the present invention;
FIG. 4 is a schematic top view of the top box of the present invention;
FIG. 5 is a schematic perspective cross-sectional view of the cleaning tank of the present invention;
FIG. 6 is a perspective view of the wiping tank of the present invention;
fig. 7 is a schematic three-dimensional exploded view of the wiping mechanism and the material guiding mechanism of the invention.
In the figure: 1. feeding a material box; 2. a feeding mechanism; 21. a guide chute; 22. a slider; 23. pushing the strips; 24. a tension spring; 25. a feeding rotary column; 26. a semicircular turntable; 27. a roller; 28. a first stressed belt pulley; 29. a discharge through hole; 3. a first material guide mechanism; 31. a first material guide rotating column; 32. a first roller; 33. a first rectangular through hole; 34. a first rectangular sliding block; 35. a first spring; 4. a material conveying mechanism; 41. a material conveying rotating column; 42. an auxiliary material conveying column; 43. a material conveying belt disc; 5. cleaning the spray head; 6. wiping the box; 7. a wiping mechanism; 71. a limiting through hole; 72. pressing a plate; 73. cleaning cotton I; 74. cleaning cotton II; 8. driving the belt pulley; 9. a second material guide mechanism; 91. a second material guide rotating column; 92. a second roller; 93. a second rectangular through hole; 94. a second rectangular sliding block; 95. a third spring; 10. a motor; 11. and (5) cleaning the tank.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-7, the present invention provides a technical solution: a cleaning mechanism for ICP plasma etching comprises a feeding box 1, a feeding mechanism 2 is arranged in an inner cavity of the feeding box 1, a first material guide mechanism 3 is arranged in an inner cavity of the left side of the feeding box 1, the first material guide mechanism 3 comprises first material guide rotating columns 31 located at the top and the bottom of the left side of the feeding box 1, the front ends of the first bottom material guide rotating columns 31 penetrate through the front side of the feeding box 1 and are fixedly connected with a driving belt pulley 8, the driving belt pulley 8 and four material conveying belt pulleys 43 are connected through belt transmission, the driving belt pulley 8, a first stress belt pulley 28 and a wiping belt pulley 96 are connected through belt transmission, the mentioned belts are poly-wedge belts sold in the market, the driving belt pulley 8, the first stress belt pulley 28 and the wiping belt pulley 96 are matched with the poly-wedge belts, and through the arrangement of the driving belt pulley 8, one driving belt pulley 8 can drive the material conveying belt pulleys 43, The cleaning belt pulley 96 and the stressed belt pulley 28 rotate synchronously, on one hand, the synchronism of operation among structures of the cleaning mechanism is improved, on the other hand, the production cost of the cleaning mechanism is reduced, the left side of the front surface of the feeding box 1 is fixedly connected with the motor 10, the output shaft of the motor 10 is fixedly connected with the driving belt pulley 8, the surface of the driving belt pulley 8 is provided with two annular grooves, the surface of the material guiding rotating column I31 is fixedly connected with a roller I32, the front end and the rear end of the top material guiding rotating column I31 are rotatably connected with a rectangular sliding block I34, the left sides of the front surface and the back surface of the feeding box 1 are respectively provided with a rectangular through hole I33 for the sliding of the rectangular sliding block I34, the top of the rectangular sliding block I34 is welded with a spring I35, the top end of the spring I35 is welded with the top of the inner cavity of the rectangular through hole I33, and the arrangement of the material guiding mechanism I, the silicon wafers pushed out from the inner cavity of the discharging through hole 29 are transmitted leftwards, the rectangular sliding block I34 and the spring I35 are matched for use, so that the top roller I32 exerts certain downward pressure on the silicon wafers, and then the bottom roller I32 rotates to enable the silicon wafers to move leftwards, the feeding mechanism 2 comprises two guide chutes 21 arranged on the front side and the rear side of the inner cavity of the feeding box 1, the inner cavity of each guide chute 21 is connected with a sliding push block 22 in a sliding mode, the right side of the top of the sliding push block 22 is fixedly connected with a push strip 23, the bottom of the left side of the sliding push block 22 is welded with two tension springs 24, the left ends of the tension springs 24 are welded with the inner wall of the feeding box 1, the inner cavity of the feeding box 1 is provided with a feeding rotating column 25, the rear end of the feeding rotating column 25 is rotatably connected with the feeding box 1 through a bearing, the front end of the feeding rotating, the surface of the feeding rotating column 25 is fixedly connected with a semicircular rotating disc 26, the inner cavity of the sliding push block 22 is rotatably connected with a roller 27, the surface of the semicircular rotating disc 26 is in rolling connection with the roller 27, the left side of the inner cavity of the feeding box 1 is provided with a discharging through hole 29, the left side of the feeding box 1 is fixedly connected with a cleaning box 11, the inner cavity of the cleaning box 11 is provided with a material conveying mechanism 4, the material conveying mechanism 4 comprises four material conveying rotating columns 41 and four auxiliary material conveying columns 42 which are positioned in the inner cavity of the cleaning box 11, the front ends of the material conveying rotating columns 41 penetrate through the front side of the cleaning box 11 and are fixedly connected with a material conveying belt disc 43, the rear ends of the material conveying rotating columns 41 are rotatably connected with the inner wall of the cleaning box 11 through bearings, the front ends and the rear ends of the auxiliary material conveying columns 42 are rotatably connected with the inner wall of the cleaning box 11 through bearings, and the arrangement of the material conveying mechanism 4 is, carry the washing to the silicon chip, the equal fixedly connected with in the bottom of the top of wasing case 11 and inner chamber washs shower nozzle 5, it needs to explain, the user needs to provide the water source to wasing shower nozzle 5 through external water supply pipeline, the left side fixedly connected with who washs case 11 cleans case 6, the right side of cleaning the 6 inner chambers of case is provided with guide mechanism two 9, guide mechanism two 9 rotates post two 91 including the guide that is located to clean 6 inner chamber tops and bottoms, the fixed surface of guide rotation post two 91 is connected with cylinder two 92, the front end and the rear end on top guide rotation post two 91 surface all rotate and are connected with rectangle slider two 94, clean the front side and the rear side of case 6 inner chamber and all set up and supply the gliding rectangle through-hole two 93 of rectangle slider two 94, the top welding of rectangle slider two 94 has spring three 95, the top of spring three 95 welds with the top of rectangle through-hole two 93 inner chambers, the front end of bottom rotation post two 91 runs through to the front side of cleaning case 6 and fixedly connected with cleans the belt Through the arrangement of the material guide mechanism II 9, the silicon wafer is transferred leftwards through the matching use of the material guide rotating column II 91 and the roller II 92, the rectangular slide block II 94 and the spring III 95, the top roller II 92 exerts a certain downward pressure on the silicon wafer, the rotation of the bottom roller II 92 can enable the silicon wafer to move leftwards, the silicon wafer can be pushed between the cleaning cotton I73 and the cleaning cotton II 74 to be wiped, the wiping mechanism 7 is arranged on the left side of the inner cavity of the wiping box 6, the wiping mechanism 7 comprises a pressing plate 72 which is connected to the left side of the inner cavity of the wiping box 6 in a sliding manner, the front side and the rear side of the inner cavity of the wiping box 6 are both provided with limiting through holes 71 for the pressing plate 72 to slide, the cleaning cotton I73 is fixedly connected to the bottom of the pressing plate 72, the cleaning cotton II 74 is fixedly connected to the left side of the bottom of the inner cavity of the wiping box 6, the top end of the second spring 75 is welded with the top of the inner cavity of the limiting through hole 71.
The working principle is as follows: when the silicon wafer feeding device is used, a user puts a silicon wafer into the inner cavity of the feeding box 1, then the motor 10 is started, the motor 10 drives the bottom guide rotating column I31 and the stressed belt pulley I28 to rotate through the driving belt pulley 8, the stressed belt pulley I28 drives the feeding rotating column 25 and the semicircular rotary disk 26 to rotate, due to the arrangement of the surface shape of the semicircular rotary disk 26, the semicircular rotary disk 26 pushes the roller 27 to move left and right, then the sliding push block 22 moves left and right under the pushing force of the roller 27 and the pulling force of the tension spring 24, the sliding push block 22 drives the push strip 23 to sequentially push the silicon wafer in the inner cavity of the feeding box 1 out of the inner cavity of the feeding box 1 from the discharge through hole 29, so that the silicon wafer enters between the two guide rotating columns I31, and the bottom guide rotating column I31 rotates, so that the silicon wafer continues to;
when the silicon wafer reaches the inner cavity of the cleaning box 11, the driving belt disc 8 drives the four material conveying belt discs 43 to rotate, the material conveying belt discs 43 drive the auxiliary material conveying columns 42 to rotate, so that the silicon wafer slides leftwards on the surfaces of the material conveying rotating columns 41 and the auxiliary material conveying columns 42, and meanwhile, the two cleaning spray heads 5 spray cleaning liquid to the top and the bottom of the silicon wafer;
when the silicon wafer reaches the left side of the inner cavity of the cleaning box 11, the driving belt disc 8 drives the cleaning belt disc 96 to rotate through the belt, the cleaning belt disc 96 drives the bottom guide rotating column II 91 to rotate, the silicon wafer is pulled out of the inner cavity of the cleaning box 11 and then is transmitted between the cleaning cotton I73 and the cleaning cotton II 74, and the spring II 75 has certain thrust on the pressing plate 72, so that the cleaning cotton I73 and the cleaning cotton II 74 press and clean the top and the bottom of the silicon wafer, and then the cleaning liquid on the top and the bottom of the silicon wafer is cleaned;
finally, the user takes out the silicon wafer between the first cleaning cotton 73 and the second cleaning cotton 74 and carries out the subsequent etching step;
through the operation of the steps, the purposes of automatic feeding, complete cleaning and automatic wiping and dewatering can be achieved.
In summary, the following steps: this wiper mechanism for ICP plasma sculpture, cooperation through feeding mechanism 2 and guide mechanism 3 is used, silicon chip in 1 inner chamber of material loading case transmits to the inner chamber of cleaning case 11, wash at the inner chamber of cleaning case 11, use through the cooperation of passing material mechanism 4 and guide mechanism two 9 afterwards, send the silicon chip to the inner chamber of cleaning case 6, finally setting through cleaning mechanism 7, clean the silicon chip, can reach automatic feeding, wash the mesh of comprehensive and automatic dehydration of cleaning, this wiper mechanism for ICP plasma sculpture, the current cleaning method to the silicon chip has been solved, mostly carry out simple cleaning to the silicon chip surface through the manual work, this kind of abluent mode, the cleaning performance is relatively poor, the manual work cleans to the silicon chip surface and has great omission risk, and the manual work cleans inefficiency, the problem of wasting time and energy.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
The electrical components presented in the document are all electrically connected with an external master controller and 220V mains, and the master controller can be a conventional known device controlled by a computer or the like.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The utility model provides an ICP plasma etching is with wiper mechanism, includes material loading box (1), its characterized in that: the inner cavity of the feeding box (1) is provided with a feeding mechanism (2), the left inner cavity of the feeding box (1) is provided with a first guide mechanism (3), the feeding mechanism (2) comprises two guide sliding chutes (21) which are arranged on the front side and the rear side of the inner cavity of the feeding box (1), the inner cavity of each guide sliding chute (21) is connected with a sliding push block (22) in a sliding manner, the right side of the top of each sliding push block (22) is fixedly connected with a push strip (23), the left bottom of each sliding push block (22) is welded with two tension springs (24), the left ends of the tension springs (24) are welded with the inner wall of the feeding box (1), the inner cavity of the feeding box (1) is provided with a feeding rotating column (25), the rear end of the feeding rotating column (25) is rotatably connected with the feeding box (1) through a bearing, the front end of the feeding rotating column (25) penetrates through the front side of the feeding box (1) and is, the surface of the feeding rotating column (25) is fixedly connected with a semicircular rotary table (26), the inner cavity of the sliding push block (22) is rotatably connected with a roller (27), the surface of the semicircular rotary table (26) is in rolling connection with the roller (27), a discharge through hole (29) is formed in the left side of the inner cavity of the feeding box (1), the left side of the feeding box (1) is fixedly connected with a cleaning box (11), the inner cavity of the cleaning box (11) is provided with a material conveying mechanism (4), the top of the cleaning box (11) and the bottom of the inner cavity are both fixedly connected with a cleaning nozzle (5), the left side of the cleaning box (11) is fixedly connected with a cleaning box (6), the right side of the inner cavity of the cleaning box (6) is provided with a material guide mechanism II (9), the left side of the inner cavity of the cleaning box (6) is provided with a cleaning mechanism (7), the cleaning mechanism (7) comprises a pressing plate (, clean the front side and the rear side of case (6) inner chamber and all set up and supply gliding spacing through-hole (71) of clamp plate (72), the clean cotton (73) of bottom fixedly connected with of clamp plate (72), clean the clean cotton two (74) of left side fixedly connected with of case (6) inner chamber bottom, the front side and the rear side at clamp plate (72) top all weld spring two (75), the top of spring two (75) welds mutually with the top of spacing through-hole (71) inner chamber.
2. A cleaning mechanism according to claim 1, for ICP plasma etching, characterized in that: pass material mechanism (4) and rotate post (41) and four supplementary material belt pulley (43) of passing including four biography materials that are located washing case (11) inner chamber, pass the front end that the material rotated post (41) and run through to the front side of washing case (11) and fixedly connected with, pass the material and rotate the inner wall rotation that the rear end of post (41) passes through bearing and washing case (11) and be connected, supplementary front end and the rear end of passing material post (42) all rotate through the inner wall of bearing and washing case (11) and be connected.
3. A cleaning mechanism according to claim 1, for ICP plasma etching, characterized in that: guide mechanism (3) rotate post (31) including the guide that is located workbin (1) left side top and bottom, the fixed surface that the guide rotated post (31) is connected with cylinder (32), and the front end and the rear end that the post (31) was rotated to the top guide all rotate and are connected with rectangle slider (34), go up workbin (1) positive surface and the left side of backing surface and all offer and supply gliding rectangle through-hole (33) of rectangle slider (34), the top welding of rectangle slider (34) has spring (35), the top of spring (35) welds mutually with the top of rectangle through-hole (33) inner chamber.
4. A cleaning mechanism according to claim 1, for ICP plasma etching, characterized in that: the second guide mechanism (9) comprises a second guide rotating column (91) located at the top and the bottom of an inner cavity of the wiping box (6), a second roller (92) fixedly connected to the surface of the second guide rotating column (91), a second rectangular sliding block (94) rotatably connected to the front end and the rear end of the second top guide rotating column (91), a second rectangular through hole (93) for sliding the second rectangular sliding block (94) is formed in the front side and the rear side of the inner cavity of the wiping box (6), a third spring (95) is welded to the top of the second rectangular sliding block (94), the top end of the third spring (95) is welded to the top of the inner cavity of the second rectangular through hole (93), and the front end of the second bottom guide rotating column (91) penetrates through the front side of the wiping box (6) and is fixedly connected with a wiping belt disc (96).
5. A cleaning mechanism according to claim 3, wherein: the front end of the first bottom material guiding rotating column (31) penetrates through the front side of the upper box (1) and is fixedly connected with a driving belt pulley (8), and two annular grooves are formed in the surface of the driving belt pulley (8).
6. A cleaning mechanism according to claim 5, for ICP plasma etching, characterized in that: go up workbin (1) positive surface's left side fixedly connected with motor (10), the output shaft and drive belt pulley (8) fixed connection of motor (10).
7. A cleaning mechanism for ICP plasma etching according to claim 2, 4 or 5, wherein: the driving belt pulley (8) is connected with the four material conveying belt pulleys (43) in a belt transmission mode, and the driving belt pulley (8), the first stressed belt pulley (28) and the wiping belt pulley (96) are connected in a belt transmission mode.
Priority Applications (1)
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| CN112547631A (en) * | 2020-11-13 | 2021-03-26 | 刘怀安 | Cleaning device for lens |
| CN112909128A (en) * | 2021-02-07 | 2021-06-04 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Manufacturing method of heterojunction solar cell and heterojunction solar cell |
| CN113053719A (en) * | 2021-03-26 | 2021-06-29 | 邵帅 | Dry etching machine and using method thereof |
| CN118645456A (en) * | 2024-08-14 | 2024-09-13 | 无锡邑文微电子科技股份有限公司 | Dry etching device for round wafer |
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