CN111656521A - 静电释放保护电路、显示基板和显示装置 - Google Patents
静电释放保护电路、显示基板和显示装置 Download PDFInfo
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- CN111656521A CN111656521A CN201980000031.8A CN201980000031A CN111656521A CN 111656521 A CN111656521 A CN 111656521A CN 201980000031 A CN201980000031 A CN 201980000031A CN 111656521 A CN111656521 A CN 111656521A
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- electrostatic discharge
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- electrostatic
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- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 230000003068 static effect Effects 0.000 abstract description 42
- 230000005611 electricity Effects 0.000 abstract description 26
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 239000004020 conductor Substances 0.000 description 11
- 238000007599 discharging Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/18—Packaging or power distribution
- G06F1/181—Enclosures
- G06F1/182—Enclosures with special features, e.g. for use in industrial environments; grounding or shielding against radio frequency interference [RFI] or electromagnetical interference [EMI]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0067—Devices for protecting against damage from electrostatic discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0079—Electrostatic discharge protection, e.g. ESD treated surface for rapid dissipation of charges
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Semiconductor Integrated Circuits (AREA)
- Elimination Of Static Electricity (AREA)
Abstract
一种静电释放保护电路、显示基板和显示装置。该静电释放保护电路包括:第一导电部,具有端部;和至少一个静电释放部,与所述第一导电部同层设置并且与所述第一导电部的端部彼此间隔,所述至少一个静电释放部配置为释放在所述第一导电部的端部处产生的静电电荷。由于静电释放部位于第一导电部端部的附近,在端部处积累的静电电荷能通过静电释放部得到释放,这样,静电释放部能分担击穿电流,防止静电进入其他有效电路。
Description
PCT国内申请,说明书已公开。
Claims (16)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/070476 WO2020140285A1 (zh) | 2019-01-04 | 2019-01-04 | 静电释放保护电路、显示基板和显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111656521A true CN111656521A (zh) | 2020-09-11 |
CN111656521B CN111656521B (zh) | 2023-12-26 |
Family
ID=71406845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980000031.8A Active CN111656521B (zh) | 2019-01-04 | 2019-01-04 | 静电释放保护电路、显示基板和显示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11579667B2 (zh) |
EP (1) | EP3907759A1 (zh) |
CN (1) | CN111656521B (zh) |
WO (1) | WO2020140285A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112713138B (zh) * | 2020-12-28 | 2024-05-17 | 武汉天马微电子有限公司 | 一种柔性基板及显示面板 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070029615A1 (en) * | 2005-08-08 | 2007-02-08 | Han-Chung Lai | Active matrix substrate and repairing method thereof |
CN104570493A (zh) * | 2015-01-22 | 2015-04-29 | 合肥京东方光电科技有限公司 | 一种阵列基板母板及其制作方法、静电消除设备 |
CN106201074A (zh) * | 2016-06-30 | 2016-12-07 | 京东方科技集团股份有限公司 | 触控基板及其制作方法、触控屏 |
CN107785350A (zh) * | 2016-08-24 | 2018-03-09 | 中华映管股份有限公司 | 静电防护电路及静电防护方法 |
CN108666304A (zh) * | 2018-05-10 | 2018-10-16 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板和显示面板 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5023672A (en) * | 1989-11-15 | 1991-06-11 | Ford Microelectronics | Electrostatic discharge protection device for gallium arsenide resident integrated circuits |
US7067914B2 (en) * | 2001-11-09 | 2006-06-27 | International Business Machines Corporation | Dual chip stack method for electro-static discharge protection of integrated circuits |
JP4031423B2 (ja) * | 2003-10-29 | 2008-01-09 | 株式会社東芝 | 半導体集積回路 |
JP2008166099A (ja) * | 2006-12-28 | 2008-07-17 | Fuji Xerox Co Ltd | 回路基板および電子部品 |
CN101354507B (zh) * | 2007-07-26 | 2010-10-06 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器阵列基板结构及其制造方法 |
US20090200063A1 (en) * | 2008-02-08 | 2009-08-13 | Sony Ericsson Mobile Communications Ab | Embedded spark gap |
TWI567599B (zh) * | 2013-09-27 | 2017-01-21 | 友達光電股份有限公司 | 具靜電攻擊防護之面板裝置 |
TWI522877B (zh) * | 2014-04-30 | 2016-02-21 | 群創光電股份有限公司 | 觸控面板與觸控顯示裝置 |
CN104765490A (zh) * | 2015-03-23 | 2015-07-08 | 小米科技有限责任公司 | 具有静电防护结构的触控电路以及触控面板 |
TWI669991B (zh) * | 2018-01-11 | 2019-08-21 | 和碩聯合科技股份有限公司 | 具靜電放電保護機制的電路板及具有此電路板的電子裝置 |
-
2019
- 2019-01-04 CN CN201980000031.8A patent/CN111656521B/zh active Active
- 2019-01-04 US US16/632,098 patent/US11579667B2/en active Active
- 2019-01-04 EP EP19829390.4A patent/EP3907759A1/en not_active Withdrawn
- 2019-01-04 WO PCT/CN2019/070476 patent/WO2020140285A1/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070029615A1 (en) * | 2005-08-08 | 2007-02-08 | Han-Chung Lai | Active matrix substrate and repairing method thereof |
CN104570493A (zh) * | 2015-01-22 | 2015-04-29 | 合肥京东方光电科技有限公司 | 一种阵列基板母板及其制作方法、静电消除设备 |
CN106201074A (zh) * | 2016-06-30 | 2016-12-07 | 京东方科技集团股份有限公司 | 触控基板及其制作方法、触控屏 |
CN107785350A (zh) * | 2016-08-24 | 2018-03-09 | 中华映管股份有限公司 | 静电防护电路及静电防护方法 |
CN108666304A (zh) * | 2018-05-10 | 2018-10-16 | 深圳市华星光电半导体显示技术有限公司 | 一种阵列基板和显示面板 |
Also Published As
Publication number | Publication date |
---|---|
CN111656521B (zh) | 2023-12-26 |
WO2020140285A1 (zh) | 2020-07-09 |
EP3907759A1 (en) | 2021-11-10 |
US11579667B2 (en) | 2023-02-14 |
US20210223831A1 (en) | 2021-07-22 |
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