CN111651028B - 信号发射电路和包括该信号发射电路的装置 - Google Patents

信号发射电路和包括该信号发射电路的装置 Download PDF

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Publication number
CN111651028B
CN111651028B CN202010516872.9A CN202010516872A CN111651028B CN 111651028 B CN111651028 B CN 111651028B CN 202010516872 A CN202010516872 A CN 202010516872A CN 111651028 B CN111651028 B CN 111651028B
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current
circuit
transistor
voltage
coupled
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Chinese (zh)
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CN111651028A (zh
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马提亚斯·彼得
简·塔尔海姆
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Power Integrations Switzerland GmbH
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Power Integrations Switzerland GmbH
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/80—Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0264—Arrangements for coupling to transmission lines
    • H04L25/0266—Arrangements for providing Galvanic isolation, e.g. by means of magnetic or capacitive coupling
    • H04L25/0268—Arrangements for providing Galvanic isolation, e.g. by means of magnetic or capacitive coupling with modulation and subsequent demodulation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/462—Indexing scheme relating to amplifiers the current being sensed
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45288—Differential amplifier with circuit arrangements to enhance the transconductance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/20—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by the transmission technique; characterised by the transmission medium
    • H04B5/24—Inductive coupling
    • H04B5/26—Inductive coupling using coils
    • H04B5/266—One coil at each side, e.g. with primary and secondary coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dc-Dc Converters (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Power Conversion In General (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
CN202010516872.9A 2015-07-31 2016-07-25 信号发射电路和包括该信号发射电路的装置 Active CN111651028B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010516872.9A CN111651028B (zh) 2015-07-31 2016-07-25 信号发射电路和包括该信号发射电路的装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP15179318.9A EP3125065B1 (en) 2015-07-31 2015-07-31 Communicating across galvanic isolation
EP15179318.9 2015-07-31
CN202010516872.9A CN111651028B (zh) 2015-07-31 2016-07-25 信号发射电路和包括该信号发射电路的装置
CN201610592879.2A CN106571835B (zh) 2015-07-31 2016-07-25 信号发射电路和包括该信号发射电路的装置

Related Parent Applications (1)

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CN201610592879.2A Division CN106571835B (zh) 2015-07-31 2016-07-25 信号发射电路和包括该信号发射电路的装置

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CN111651028A CN111651028A (zh) 2020-09-11
CN111651028B true CN111651028B (zh) 2023-07-07

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CN201610592879.2A Active CN106571835B (zh) 2015-07-31 2016-07-25 信号发射电路和包括该信号发射电路的装置

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US (2) US10326306B2 (https=)
EP (3) EP3125065B1 (https=)
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EP4246822B1 (en) 2017-12-05 2025-05-21 Power Integrations, Inc. Communications using an inductive coupling
US10790757B2 (en) * 2017-12-08 2020-09-29 Texas Instruments Incorporated Galvanic isolation devices to provide power and data between subsystems
EP3748848B1 (en) * 2018-03-08 2022-05-04 Mitsubishi Electric Corporation Variable inductor circuit
JP7051649B2 (ja) * 2018-09-07 2022-04-11 株式会社東芝 磁気結合装置及び通信システム
EP3754848B1 (en) * 2019-06-20 2023-11-15 Nxp B.V. Near field communications ic and method for mobile communications device
CN110729777B (zh) * 2019-07-05 2021-09-07 珠海市杰理科技股份有限公司 充电、通信电路和方法及其充电设备、配件和系统
US11418121B2 (en) 2019-12-30 2022-08-16 Power Integrations, Inc Auxiliary converter to provide operating power for a controller
CN111162767B (zh) * 2020-01-02 2024-02-27 宁波拓邦智能控制有限公司 一种感性负载的开关控制方法及装置
US11258369B2 (en) 2020-02-19 2022-02-22 Power Integrations, Inc. Inductive charging circuit to provide operative power for a controller
CN111865294B (zh) * 2020-07-30 2022-05-31 清华四川能源互联网研究院 功率匹配接口电路和功率匹配系统
JP7499110B2 (ja) * 2020-08-11 2024-06-13 ローム株式会社 制御装置及びコンバータ
US11888658B2 (en) 2020-10-08 2024-01-30 Skyworks Solutions, Inc. Transmitter for dual communication over an isolation channel
US11575305B2 (en) * 2020-10-08 2023-02-07 Skyworks Solutions, Inc. Interface for passing control information over an isolation channel
US11539559B2 (en) 2020-10-08 2022-12-27 Skyworks Solutions, Inc. Demodulator for an isolation communication channel for dual communication
CN112782619B (zh) * 2021-01-31 2021-09-17 山西大学 一种适用于亥姆霍兹线圈的磁场方向快速切换装置
CN113141062B (zh) * 2021-04-23 2023-01-31 新疆大学 无线电能传输系统及其移相键控通信前馈补偿方法
US11979090B2 (en) 2021-08-12 2024-05-07 Power Integrations, Inc. Power converter controller with branch switch
US12592639B2 (en) 2023-12-21 2026-03-31 Power Integrations, Inc. Self-biasing the input controller in a power converter
CN119093700B (zh) * 2024-08-21 2026-02-10 杭州士兰微电子股份有限公司 峰值电流采样电路、开关电源控制器以及开关电源

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JPH05204476A (ja) * 1992-01-24 1993-08-13 Sony Corp 安定化電源回路
JP2000122738A (ja) * 1998-10-19 2000-04-28 Mitsubishi Electric Corp 電流源回路および電圧発生回路
KR20070013059A (ko) * 2005-07-25 2007-01-30 삼성전자주식회사 반도체 집적회로
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Also Published As

Publication number Publication date
JP6829019B2 (ja) 2021-02-10
CN111651028A (zh) 2020-09-11
EP3910445A1 (en) 2021-11-17
US10326306B2 (en) 2019-06-18
EP3910445B1 (en) 2023-01-04
US20190342122A1 (en) 2019-11-07
JP2017073116A (ja) 2017-04-13
EP3493015B1 (en) 2021-05-19
US11381111B2 (en) 2022-07-05
US20170033603A1 (en) 2017-02-02
CN106571835B (zh) 2020-06-09
EP3493015A1 (en) 2019-06-05
CN106571835A (zh) 2017-04-19
EP3125065B1 (en) 2018-12-19
EP3125065A1 (en) 2017-02-01

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