CN111636051A - Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof - Google Patents

Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof Download PDF

Info

Publication number
CN111636051A
CN111636051A CN202010417645.0A CN202010417645A CN111636051A CN 111636051 A CN111636051 A CN 111636051A CN 202010417645 A CN202010417645 A CN 202010417645A CN 111636051 A CN111636051 A CN 111636051A
Authority
CN
China
Prior art keywords
amorphous
ingan
laser
target
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202010417645.0A
Other languages
Chinese (zh)
Other versions
CN111636051B (en
Inventor
王婷
沈晓明
符跃春
何欢
莫观孔
邹卓良
黄山峰
韦泽麒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangxi University
Original Assignee
Guangxi University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangxi University filed Critical Guangxi University
Priority to CN202010417645.0A priority Critical patent/CN111636051B/en
Publication of CN111636051A publication Critical patent/CN111636051A/en
Application granted granted Critical
Publication of CN111636051B publication Critical patent/CN111636051B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

The invention discloses a device of an amorphous InGaN/Si heterojunction solar cell and a preparation method thereof, wherein a high-energy laser beam emitted by a pulse laser In the device is divided into two beams by a spectroscope, the two beams respectively enter a deposition chamber from a window through two focusing lenses and irradiate an In/GaN double target material, the irradiated area on the surface of the target material is instantaneously ablated to generate plasma plume, the plasma plume is transported to a p-Si substrate In a micro-area explosion mode to be deposited to form an amorphous InGaN film, an Au metal ohmic electrode is sputtered on the surface of the amorphous InGaN film, and an In-Ga alloy ohmic electrode is sputtered on the back of the p-Si substrate, so that the preparation of the amorphous InGaN/Si heterojunction solar cell is completed. The device is simple and convenient to operate and flexible to adjust, the preparation method does not need a buffer layer, the method is simple and easy to implement, the growth temperature of the film is low, the process is simplified, the production cost is reduced, and the prepared amorphous InGaN/Si heterojunction solar cell has better photoelectric conversion efficiency.

Description

Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a device of an amorphous InGaN/Si heterojunction solar cell and a preparation method thereof.
Background
With the global energy shortage and the aggravation of the environmental pollution degree, the importance of the solar photovoltaic power generation technology is increasingly shown, and the solar photovoltaic industry develops very rapidly and becomes a high and new technology industry which is concerned with much attention. In order to further utilize the solar spectrum and improve the photoelectric conversion efficiency of the solar cell, researchers have proposed a plurality of new concepts, new materials and new-structure solar cells. InGaN alloy is a novel photovoltaic material, is a wide-bandgap semiconductor material which is currently researched and compared, and has high light absorption coefficient (10)5cm-1) The solar cell has the characteristics of strong radiation resistance, high temperature resistance, ultrahigh hardness and the like, and the forbidden bandwidth is continuously adjustable within the range of 0.7eV to 3.4eV by adjusting the components of the In element, so that the solar cell is suitable for being made into various solar cells with different forbidden bandwidths.
The InGaN material is widely applied to the fields of light emitting diodes, ultraviolet detectors, semiconductor lasers, semiconductor photovoltaic devices and the like, but the preparation of high-quality and high-In-component InGaN thin films still has more technical problems, such as the problems of uneven In components, phase separation, high dislocation density and the like. Compared with a single crystal InGaN material, the crystal structure of the amorphous InGaN material has disorder, the production process is simple, the preparation and growth are easier, and the production cost can be reduced. Therefore, the amorphous InGaN material has obvious advantages in the field of preparing large-area InGaN-based devices.
On the other hand, substrates for epitaxial growth of III-N alloys mainly include silicon, sapphire, silicon carbide and the like, silicon materials are the most commonly used photovoltaic materials, the research on the silicon materials is mature, the silicon materials are applied to large scale in integrated circuits, the silicon materials are low in price, high in quality, low in resistivity and mature in processing technology, and the silicon band gap (1.12eV) is particularly suitable for the bottom junction of a high-efficiency solar cell, so that InGaN and silicon are combined to construct an amorphous InGaN/Si heterojunction solar cell which can be used for solar photovoltaic power generation.
The rapidly developing solar photovoltaic industry has promoted new photovoltaic materials, new device structures, new preparation processes and the like, and InGaN solar cells have been reported in recent years, but have been developed very slowly. While the research reports of the amorphous InGaN solar cell are extremely rare at present, the research of the amorphous InGaN/Si heterojunction solar cell is valuable both from the basic research and from the practical application.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a method for preparing an amorphous InGaN film and an amorphous InGaN/Si heterojunction solar cell by adopting a double-optical-path double-target pulse laser deposition device, is simple and feasible, does not need a buffer layer, has low film growth temperature, and reduces the process complexity and the production cost. The amorphous InGaN/Si heterojunction solar cell prepared by the method has better photoelectric conversion efficiency.
The technical scheme of the invention is as follows:
an amorphous InGaN/Si heterojunction solar cell device comprises a laser system, a double-optical-path system and a deposition system;
the laser system comprises a pulse laser for emitting a high-energy laser beam;
the dual-optical-path system comprises a spectroscope, a first reflector, a first focusing lens, a first laser window, a second reflector, a second focusing lens and a second laser window; a high-energy laser beam emitted by the pulse laser is divided into two laser paths through a spectroscope, wherein the two laser paths are a first laser path and a second laser path; the first laser light path irradiates on the In target material through a first reflector, a first focusing lens and a first laser window respectively; the second laser light path is irradiated on the GaN target material through a second reflector, a second focusing lens and a second laser window respectively; the In target and the GaN target form an In/GaN double target, and the irradiated area of the surface of the In target and the GaN target is instantaneously ablated to generate plasma plume;
the deposition system comprises a deposition chamber, a sample introduction chamber, a target disc for mounting an In/GaN double target material and a heater for heating a p-Si substrate; a first laser window, a second laser window, an observation window, a motor, a vacuum system and a sample chamber are arranged around the deposition chamber; the motor and the vacuum system are arranged oppositely in parallel, and the observation window and the sampling chamber are arranged oppositely in parallel; the motor is located the intermediate position of first laser window and second laser window, and motor shaft connection heater.
Preferably, the target plate comprises a plate body, an annular vent pipe and an air inlet pipe; the In/GaN double-target material is arranged on the disc body and is surrounded by the annular vent pipe; the annular breather pipe is communicated with the air inlet pipe, and a plurality of vent holes are uniformly formed in the periphery of the annular breather pipe.
Preferably, the In/GaN dual target consists of an annular GaN target sleeved outside a circular In target.
Preferably, a vacuum valve is arranged in the sample chamber.
Preferably, the pulsed laser is a KrF excimer laser.
A preparation method of an amorphous InGaN/Si heterojunction solar cell comprises the following steps:
firstly, cleaning a substrate;
sequentially ultrasonically cleaning the p-Si substrate for 4-10 min by using distilled water, HF solution, acetone, absolute ethyl alcohol and deionized water respectively, and then quickly drying by using nitrogen;
secondly, mounting the substrate and the In/GaN double target material;
mounting a GaN target material and an In target material on a target disc, placing the target disc at a fixed position In a deposition chamber, mounting the processed substrate on a sample disc of a sample chamber, and regulating and controlling the vacuum degree of the sample chamber and the deposition chamber to 10-5Pa magnitude order or above, pushing the sample disc into a deposition chamber;
thirdly, setting deposition parameters;
setting N2The partial pressure is 5-20 Pa, the distance between the target and the substrate is 40-100 mm, the laser pulse energy is 50-400 mJ/Pluse, and the pulse frequency is adjusted within 1-20 Hz;
fourthly, pre-sputtering the target material;
blocking the substrate by a baffle plate, opening a pulse laser, dividing a high-energy laser beam emitted by the pulse laser into two laser light paths through a spectroscope, and respectively irradiating the laser light paths on the In target material and the GaN target material; pre-sputtering two targets for 4-10 min to remove residual pollutants on the surfaces of the targets;
fifthly, depositing an amorphous InGaN film;
heating the substrate to 20-600 ℃, opening the baffle, and introducing N into the deposition chamber2Setting N2The partial pressure is 5-20 Pa, the distance between the target and the substrate is 40-100 mm, the laser pulse energy is 50-400 mJ/Pluse, the pulse frequency is adjusted within 1-20 Hz, and the deposition time is 1-4 h;
sixthly, finishing the deposition;
closing the system, and taking out the amorphous InGaN film according to the reverse process of sample loading after the amorphous InGaN film is cooled to room temperature;
preparing an amorphous InGaN/Si heterojunction solar cell;
and sputtering an Au metal ohmic electrode on the surface of the amorphous InGaN thin film, and sputtering an In-Ga alloy ohmic electrode on the back of the p-Si substrate to finish the preparation of the amorphous InGaN/Si heterojunction solar cell.
Preferably, the purity of the In/GaN double target material is 5N grade.
Preferably, the thickness of the amorphous InGaN thin film is 50-500 nm.
Preferably, the Au metal ohmic electrode is prepared on the surface of the amorphous InGaN film by an ion sputtering method, and the In-Ga alloy ohmic electrode is prepared on the back of the p-Si substrate by a magnetron sputtering method.
Preferably, the preparation method of the amorphous InGaN/Si heterojunction solar cell adopts the device of the amorphous InGaN/Si heterojunction solar cell.
The invention has the beneficial effects that:
1. the amorphous n-InGaN layer grown by the method disclosed by the invention is low in growth temperature, and the process difficulty of film growth is reduced.
2. The amorphous n-InGaN layer is directly grown on the p-Si substrate, a buffer layer is not needed, the preparation method is simple and easy to implement, the process is simplified, and the production cost is reduced.
3. The device required by the double-light-path double-target material pulse laser deposition technology designed by reforming the pulse laser light path is simple and easy to operate, and each state in the device can be flexibly adjusted and controlled.
4. At present, research on the amorphous InGaN/Si heterojunction solar cell provided by the invention is hardly reported, and the solar cell has better photoelectric conversion efficiency.
Drawings
FIG. 1 is a schematic structural diagram of the device of the amorphous InGaN/Si heterojunction solar cell of the present invention.
Fig. 2 is a schematic structural diagram of a dual target formed by combining an In target and a GaN target.
FIG. 3 is a schematic structural diagram of an amorphous InGaN/Si heterojunction solar cell prepared by the present invention.
Fig. 4 is an XRD pattern of the amorphous InGaN thin film of example 1 of the present invention.
FIG. 5 is a graph of current density-voltage characteristics of an amorphous InGaN/Si heterojunction solar cell in accordance with example 1 of the present invention.
Fig. 6 is an XRD pattern of the amorphous InGaN thin film of example 2 of the present invention.
FIG. 7 is a graph of current density-voltage characteristics of an amorphous InGaN/Si heterojunction solar cell in accordance with example 2 of the present invention.
Fig. 8 is an XRD pattern of the amorphous InGaN thin film of example 3 of the present invention.
FIG. 9 is a graph of current density-voltage characteristics of an amorphous InGaN/Si heterojunction solar cell in accordance with example 3 of the present invention.
In the figure, a pulse laser 1, a spectroscope 2, a first laser light path 3, a first reflector 4, a first focusing lens 5, a first laser window 6, a second laser light path 7, a second reflector 8, a second focusing lens 9, a second laser window 10, an observation window 11, a motor 12, a vacuum system 13, a vacuum valve 14, a sample chamber 15, an In/GaN double target material 16, a p-Si substrate 17, a plasma plume 18, a heater 19, a deposition chamber 20, a GaN target material 21, an In target material 22, an annular vent pipe 23, an air inlet pipe 24, an Au metal ohmic electrode 25, an amorphous InGaN thin film 26 and an In-Ga alloy ohmic electrode 27.
Detailed Description
The present invention is further described with reference to the following specific examples, but the scope of the present invention is not limited thereto.
As shown in fig. 1 to 3, an apparatus of an amorphous InGaN/Si heterojunction solar cell includes a laser system, a dual optical path system, and a deposition system;
the laser system comprises a pulse laser 1 for emitting a high-energy laser beam;
the dual-optical-path system comprises a spectroscope 2, a first reflector 4, a first focusing lens 5, a first laser window 6, a second reflector 8, a second focusing lens 9 and a second laser window 10; a high-energy laser beam emitted by the pulse laser 1 is divided into two laser paths, namely a first laser path 3 and a second laser path 7, by a spectroscope 2; the first laser light path 3 irradiates an In target 22 through a first reflector 4, a first focusing lens 5 and a first laser window 6 respectively; the second laser light path 7 is irradiated on the GaN target 21 through a second reflector 8, a second focusing lens 9 and a second laser window 10 respectively; the In target 22 and the GaN target 21 form an In/GaN double target 16, and the irradiated area of the surface of the In target is instantaneously ablated to generate plasma plume 18;
the deposition system comprises a deposition chamber 20, a sample introduction chamber 15, a target disc for mounting an In/GaN double target material 16 and a heater 19 for heating a p-Si substrate 17; a first laser window 6, a second laser window 10, an observation window 11, a motor 12, a vacuum system 13 and a sample inlet chamber 15 are arranged around the deposition chamber 20; the motor 12 and the vacuum system 13 are arranged oppositely in parallel, and the observation window 11 and the sampling chamber 15 are arranged oppositely in parallel; the motor 12 is located at a position intermediate the first laser window 6 and the second laser window 10, and the motor 12 is shaft-connected to the heater 19.
Further, the target plate comprises a plate body, an annular vent pipe 23 and an air inlet pipe 24; the In/GaN double target 16 is arranged on the disc body and is surrounded by an annular vent pipe 23; the annular vent pipe 23 is communicated with the air inlet pipe 24, and a plurality of vent holes are uniformly formed in the periphery of the annular vent pipe 23.
Further, the In/GaN dual target 16 is formed by sleeving the annular GaN target 21 outside the circular In target 22, which is beneficial to instantly ablating the irradiated area on the surface of the In/GaN dual target 16 to generate the plasma plume 18.
Further, a vacuum valve 14 is disposed in the sample chamber 15 for changing the direction of the air flow and adjusting the amount of the air flow.
Further, the pulse laser 1 is a KrF excimer laser, and the output laser wavelength is mainly in the ultraviolet to visible light range, and has the advantages of short wavelength, high frequency, large energy, small focal spot, and high processing resolution.
As shown in FIG. 3, the device of the amorphous InGaN/Si heterojunction solar cell of the present invention operates according to the following principle: high-energy laser beams emitted by a pulse laser are divided into two beams by a spectroscope, the two beams respectively enter a deposition chamber from a window through two focusing lenses to be irradiated on an In/GaN double target material, the irradiated area on the surface of the target material is instantaneously ablated to generate plasma plume, the plasma plume is transported to a p-Si substrate 17 In a micro-area explosion mode to deposit and form an amorphous InGaN film 26, an Au metal ohmic electrode 25 is sputtered on the surface of the amorphous InGaN film 26, an In-Ga alloy ohmic electrode 27 is sputtered on the back of the p-Si substrate 17, and then the preparation of the amorphous InGaN/Si heterojunction solar cell is completed.
Example 1
A preparation method of an amorphous InGaN/Si heterojunction solar cell comprises the following steps:
firstly, cleaning a substrate;
sequentially ultrasonically cleaning the p-Si substrate for 6min by using distilled water, HF solution, acetone, absolute ethyl alcohol and deionized water respectively, and then quickly drying by using nitrogen;
secondly, mounting the substrate and the In/GaN double target material;
mounting a GaN target material and an In target material on a target disc, placing the target disc at a fixed position In a deposition chamber, mounting the processed substrate on a sample disc of a sample chamber, and regulating and controlling the vacuum degree of the sample chamber and the deposition chamber to 10-5After the vacuum degree of Pa magnitude order or above is the same, the sample disc is pushed into a deposition chamber;
thirdly, setting deposition parameters;
setting N2The partial pressure is 10Pa, the distance between the target and the substrate is 60mm, the laser pulse energy is 175mJ/Pluse, and the pulse frequency is adjusted within 5 Hz;
fourthly, pre-sputtering the target material;
blocking the substrate by a baffle, opening a KrF excimer laser, dividing a pulse laser beam (lambda is 248nm) emitted by the KrF excimer laser into two laser light paths through a spectroscope, and respectively irradiating the laser light paths onto the In target material and the GaN target material; pre-sputtering two targets for 6min to remove residual pollutants on the surfaces of the targets;
fifthly, depositing an amorphous InGaN film;
heating the substrate to 50 deg.C, opening the baffle, and introducing N into the deposition chamber2Setting N2The partial pressure is 10Pa, the distance between the target and the substrate is 60mm, the laser pulse energy is 175mJ/Pluse, the pulse frequency is adjusted within 5Hz, and the deposition time is 2 h;
sixthly, finishing the deposition;
closing the system, and taking out the amorphous InGaN film according to the reverse process of sample loading after the amorphous InGaN film is cooled to room temperature;
preparing an amorphous InGaN/Si heterojunction solar cell;
and sputtering an Au metal ohmic electrode on the surface of the amorphous InGaN thin film, and sputtering an In-Ga alloy ohmic electrode on the back of the p-Si substrate to finish the preparation of the amorphous InGaN/Si heterojunction solar cell.
The InGaN thin film prepared in embodiment 1 of the present invention is amorphous, an XRD spectrogram thereof is shown in fig. 4, a current density-voltage characteristic curve of the amorphous InGaN/Si heterojunction solar cell prepared in this example is shown in fig. 5, and an analysis result shows that an open-circuit voltage is: 2.41V, short-circuit current density: 0.69mA/cm2(ii) a The fill factor is: 43.3 percent; the photoelectric conversion efficiency is: 0.72 percent.
Example 2
A preparation method of an amorphous InGaN/Si heterojunction solar cell comprises the following steps:
firstly, cleaning a substrate;
sequentially ultrasonically cleaning the p-Si substrate for 6min by using distilled water, HF solution, acetone, absolute ethyl alcohol and deionized water respectively, and then quickly drying by using nitrogen;
secondly, mounting the substrate and the In/GaN double target material;
mounting a GaN target material and an In target material on a target disc, placing the target disc at a fixed position In a deposition chamber, mounting the processed substrate on a sample disc of a sample chamber, and regulating and controlling the vacuum degree of the sample chamber and the deposition chamber to 10-5After the vacuum degree of Pa magnitude order or above is the same, the sample disc is pushed into a deposition chamber;
thirdly, setting deposition parameters;
setting N2The partial pressure is 10Pa, the distance between the target and the substrate is 60mm, the laser pulse energy is 100mJ/Pluse, and the pulse frequency is adjusted within 5 Hz;
fourthly, pre-sputtering the target material;
blocking the substrate by a baffle, opening a KrF excimer laser, dividing a pulse laser beam (lambda is 248nm) emitted by the KrF excimer laser into two laser light paths through a spectroscope, and respectively irradiating the laser light paths onto the In target material and the GaN target material; pre-sputtering two targets for 6min to remove residual pollutants on the surfaces of the targets;
fifthly, depositing an amorphous InGaN film;
heating the substrate to 80 deg.C, opening the baffle, and introducing N into the deposition chamber2Setting N2The partial pressure is 10Pa, the distance between the target and the substrate is 60mm, the laser pulse energy is 100mJ/Pluse, the pulse frequency is adjusted within 5Hz, and the deposition time is 3 h;
sixthly, finishing the deposition;
closing the system, and taking out the amorphous InGaN film according to the reverse process of sample loading after the amorphous InGaN film is cooled to room temperature;
preparing an amorphous InGaN/Si heterojunction solar cell;
and sputtering an Au metal ohmic electrode on the surface of the amorphous InGaN thin film, and sputtering an In-Ga alloy ohmic electrode on the back of the p-Si substrate to finish the preparation of the amorphous InGaN/Si heterojunction solar cell.
The InGaN film prepared in embodiment 3 of the invention is of an amorphous structure, the XRD spectrogram of the InGaN film is shown in figure 8, and the diffraction wave packet of the amorphous InGaN is formed. The current density-voltage characteristic curve of the amorphous InGaN/Si heterojunction solar cell prepared in the example is shown in FIG. 9, and the analysis result shows that the open-circuit voltage is as follows: the 3.37V short circuit current density is: 0.63mA/cm2(ii) a The fill factor is: 39.1 percent; the photoelectric conversion efficiency is: 0.83 percent.
Example 3
A preparation method of an amorphous InGaN/Si heterojunction solar cell comprises the following steps:
firstly, cleaning a substrate;
sequentially ultrasonically cleaning the p-Si substrate for 6min by using distilled water, HF solution, acetone, absolute ethyl alcohol and deionized water respectively, and then quickly drying by using nitrogen;
secondly, mounting the substrate and the In/GaN double target material;
mounting a GaN target material and an In target material on a target disc, placing the target disc at a fixed position In a deposition chamber, mounting the processed substrate on a sample disc of a sample chamber, and regulating and controlling the vacuum degree of the sample chamber and the deposition chamber to 10-5After the vacuum degree of Pa magnitude order or above is the same, the sample disc is pushed into a deposition chamber;
thirdly, setting deposition parameters;
setting N2The partial pressure is 10Pa, the distance between the target and the substrate is 60mm, the laser pulse energy is 100mJ/Pluse, and the pulse frequency is adjusted within 5 Hz;
fourthly, pre-sputtering the target material;
blocking the substrate by a baffle, opening a KrF excimer laser, dividing a pulse laser beam (lambda is 248nm) emitted by the KrF excimer laser into two laser light paths through a spectroscope, and respectively irradiating the laser light paths onto the In target material and the GaN target material; pre-sputtering two targets for 6min to remove residual pollutants on the surfaces of the targets;
fifthly, depositing an amorphous InGaN film;
heating the substrate to 280 deg.C, opening the baffle, and introducing N into the deposition chamber2Setting N2The partial pressure is 10Pa, the distance between the target and the substrate is 60mm, the laser pulse energy is 100mJ/Pluse, the pulse frequency is adjusted within 5Hz, and the deposition time is 3 h;
sixthly, finishing the deposition;
closing the system, and taking out the amorphous InGaN film according to the reverse process of sample loading after the amorphous InGaN film is cooled to room temperature;
preparing an amorphous InGaN/Si heterojunction solar cell;
and sputtering an Au metal ohmic electrode on the surface of the amorphous InGaN thin film, and sputtering an In-Ga alloy ohmic electrode on the back of the p-Si substrate to finish the preparation of the amorphous InGaN/Si heterojunction solar cell.
The InGaN thin film prepared in embodiment 3 of the present invention is amorphous, an XRD spectrogram thereof is shown in fig. 8, a current density-voltage characteristic curve of the amorphous InGaN/Si heterojunction solar cell prepared in this example is shown in fig. 9, and an analysis result shows that an open-circuit voltage is: the 3.31V short circuit current density is: 1.28mA/cm2(ii) a The fill factor is: 43.6 percent; the photoelectric conversion efficiency is: 1.86 percent.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or simple substitutions which are not thought of through the inventive work should be included in the scope of the present invention.

Claims (10)

1. An amorphous InGaN/Si heterojunction solar cell device, characterized in that: the device comprises a laser system, a double optical path system and a deposition system;
the laser system comprises a pulsed laser (1) for emitting a high-energy laser beam;
the dual-optical-path system comprises a spectroscope (2), a first reflector (4), a first focusing lens (5), a first laser window (6), a second reflector (8), a second focusing lens (9) and a second laser window (10); a high-energy laser beam emitted by the pulse laser (1) is divided into two laser paths, namely a first laser path (3) and a second laser path (7), by the spectroscope (2); the first laser light path (3) is irradiated on the In target (22) through a first reflector (4), a first focusing lens (5) and a first laser window (6) respectively; the second laser light path (7) is irradiated on the GaN target (21) through a second reflector (8), a second focusing lens (9) and a second laser window (10) respectively; the In target (22) and the GaN target (21) form an In/GaN double target (16), and the irradiated area of the surface of the In target is instantaneously ablated to generate plasma plume (18);
the deposition system comprises a deposition chamber (20), a sample introduction chamber (15), a target disc for mounting an In/GaN double target material (16) and a heater (19) for heating a p-Si substrate (17); a first laser window (6), a second laser window (10), an observation window (11), a motor (12), a vacuum system (13) and a sample inlet chamber (15) are arranged around the deposition chamber (20); wherein the motor (12) and the vacuum system (13) are arranged oppositely in parallel, and the observation window (11) and the sampling chamber (15) are arranged oppositely in parallel; the motor (12) is positioned in the middle of the first laser window (6) and the second laser window (10), and the motor (12) is in shaft connection with the heater (19).
2. The device of amorphous InGaN/Si heterojunction solar cell of claim 1, characterized in that: the target plate comprises a plate body, an annular vent pipe (23) and an air inlet pipe (24); the In/GaN double target (16) is arranged on the disc body and is surrounded by an annular vent pipe (23); the annular vent pipe (23) is communicated with the air inlet pipe (24), and a plurality of vent holes are uniformly formed in the periphery of the annular vent pipe (23).
3. Device of amorphous InGaN/Si heterojunction solar cell according to claim 2, characterized in that: the In/GaN double target (16) is formed by sleeving an annular GaN target (21) outside a circular In target (22).
4. The device of amorphous InGaN/Si heterojunction solar cell of claim 1, characterized in that: and a vacuum valve (14) is arranged in the sample inlet chamber (15).
5. The device of amorphous InGaN/Si heterojunction solar cell of claim 1, characterized in that: the pulse laser (1) is a KrF excimer laser.
6. A preparation method of an amorphous InGaN/Si heterojunction solar cell is characterized by comprising the following steps:
firstly, cleaning a substrate;
sequentially ultrasonically cleaning the p-Si substrate for 4-10 min by using distilled water, HF solution, acetone, absolute ethyl alcohol and deionized water respectively, and then quickly drying by using nitrogen;
secondly, mounting the substrate and the In/GaN double target material;
mounting a GaN target material and an In target material on a target disc, placing the target disc at a fixed position In a deposition chamber, mounting the processed substrate on a sample disc of a sample chamber, and regulating and controlling the vacuum degree of the sample chamber and the deposition chamber to 10-5Pa magnitude order or above, pushing the sample disc into a deposition chamber;
thirdly, setting deposition parameters;
setting N2The partial pressure is 5-20 Pa, the distance between the target and the substrate is 40-100 mm, the laser pulse energy is 50-400 mJ/Pluse, and the pulse frequency is adjusted within 1-20 Hz;
fourthly, pre-sputtering the target material;
blocking the substrate by a baffle plate, opening a pulse laser, dividing a high-energy laser beam emitted by the pulse laser into two laser light paths through a spectroscope, and respectively irradiating the laser light paths on the In target material and the GaN target material; pre-sputtering two targets for 4-10 min to remove residual pollutants on the surfaces of the targets;
fifthly, depositing an amorphous InGaN film;
heating the substrate to 20-600 ℃, opening the baffle, and introducing N into the deposition chamber2Setting N2The partial pressure is 5-20 Pa, the distance between the target and the substrate is 40-100 mm, the laser pulse energy is 50-400 mJ/Pluse, the pulse frequency is adjusted within 1-20 Hz, and the deposition time is 1-4 h;
sixthly, finishing the deposition;
closing the system, and taking out the amorphous InGaN film according to the reverse process of sample loading after the amorphous InGaN film is cooled to room temperature;
preparing an amorphous InGaN/Si heterojunction solar cell;
and sputtering an Au metal ohmic electrode (25) on the surface of the amorphous InGaN thin film (26), and sputtering an In-Ga alloy ohmic electrode (27) on the back surface of the p-Si substrate (17), thereby completing the preparation of the amorphous InGaN/Si heterojunction solar cell.
7. The method of claim 6, wherein the method comprises: the purity of the In/GaN double target material is 5N grade.
8. The method of claim 6, wherein the method comprises: the thickness of the amorphous InGaN film is 50-500 nm.
9. The method of claim 6, wherein the method comprises: the surface of the amorphous InGaN film is provided with an Au metal ohmic electrode by an ion sputtering method, and the back of the p-Si substrate is provided with an In-Ga alloy ohmic electrode by a magnetron sputtering method.
10. The method of claim 6, wherein the method comprises: device employing an amorphous InGaN/Si heterojunction solar cell as claimed in any of claims 1 to 5.
CN202010417645.0A 2020-05-18 2020-05-18 Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof Active CN111636051B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010417645.0A CN111636051B (en) 2020-05-18 2020-05-18 Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010417645.0A CN111636051B (en) 2020-05-18 2020-05-18 Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN111636051A true CN111636051A (en) 2020-09-08
CN111636051B CN111636051B (en) 2022-09-23

Family

ID=72330321

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010417645.0A Active CN111636051B (en) 2020-05-18 2020-05-18 Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN111636051B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101864556A (en) * 2010-05-14 2010-10-20 南京大学 High dielectric coefficient titanium-aluminum oxide film and preparation method and application thereof
CN103325878A (en) * 2013-05-31 2013-09-25 西安电子科技大学 P-i-n and InGaN/p-n dual-junction tandem Si solar cell and manufacturing method thereof
CN103996605A (en) * 2014-05-30 2014-08-20 广州市众拓光电科技有限公司 Pulsed laser deposition and molecular beam epitaxy combined coating device and application thereof
CN107937872A (en) * 2017-11-24 2018-04-20 广西大学 Increase impulse laser deposition system and method that active nitrogen auxiliary prepares GaN film
CN108423709A (en) * 2018-01-19 2018-08-21 南京理工大学 A kind of ablative method of the device based on double-pulse laser liquid phase ablation synthesizing nanocrystalline
CN109830429A (en) * 2019-01-23 2019-05-31 广西大学 A kind of double light path pulse laser is in Si(100) method of deposition on substrate InGaN film

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101864556A (en) * 2010-05-14 2010-10-20 南京大学 High dielectric coefficient titanium-aluminum oxide film and preparation method and application thereof
CN103325878A (en) * 2013-05-31 2013-09-25 西安电子科技大学 P-i-n and InGaN/p-n dual-junction tandem Si solar cell and manufacturing method thereof
CN103996605A (en) * 2014-05-30 2014-08-20 广州市众拓光电科技有限公司 Pulsed laser deposition and molecular beam epitaxy combined coating device and application thereof
CN107937872A (en) * 2017-11-24 2018-04-20 广西大学 Increase impulse laser deposition system and method that active nitrogen auxiliary prepares GaN film
CN108423709A (en) * 2018-01-19 2018-08-21 南京理工大学 A kind of ablative method of the device based on double-pulse laser liquid phase ablation synthesizing nanocrystalline
CN109830429A (en) * 2019-01-23 2019-05-31 广西大学 A kind of double light path pulse laser is in Si(100) method of deposition on substrate InGaN film

Also Published As

Publication number Publication date
CN111636051B (en) 2022-09-23

Similar Documents

Publication Publication Date Title
JP6629277B2 (en) Crystallization for semiconductor applications
EP2130234B1 (en) Continuous coating installation and method for producing crystalline thin films
CN108963027B (en) Amorphous Ga2O3Solar blind ultraviolet detector and preparation method and application thereof
CN104947050B (en) The sulfide target cosputtering method and product of a kind of CZTSSe films
US20130075247A1 (en) Method and system for forming chalcogenide semiconductor materials using sputtering and evaporation functions
EP2876696A1 (en) Method for preparing copper indium gallium selenide film solar cell
EP2860768B1 (en) Method for preparing copper indium gallium diselenide thin-film solar cell
JP2002064108A (en) Compound semiconductor film forming device
CN1312734C (en) Method for preparing beta-FeSi2 semiconductor film by femtosecond pulsed laser
CN111636051B (en) Device of amorphous InGaN/Si heterojunction solar cell and preparation method thereof
CN109830429B (en) Method for depositing InGaN film on Si (100) substrate by double-optical-path pulse laser
JP2002329878A (en) Thin-film solar battery and method for fabricating the same
US6103138A (en) Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device
CN102828152A (en) Preparation method of Mo film with low resistance rate
CN105132875B (en) A kind of method that diffusion method prepares high concentration gradient AZO monocrystalline conductive films
JP5502210B2 (en) Microcrystalline semiconductor thin film manufacturing method
CN101660132B (en) Method for preparing silicon-carbon hydride film by magnetron sputtering
JP2008004813A (en) Silicon-based thin film photoelectric conversion element and manufacturing method and manufacturing apparatus therefor
CN102912304B (en) Preparation method of (211) preferred orientation Mo film
JPH06204537A (en) Thin film semiconductor solar cell
Harrison et al. The effects of pressure on the fabrication of CdS/CdTe thin film solar cells made via pulsed laser deposition
CN117894881B (en) Method for adjusting hole concentration of CIGS film or solar cell by utilizing multi-target sputtering
RU2599769C2 (en) Method for preparing photoactive multilayer heterostructure of microcrystalline silicone
EP4340047A1 (en) Method for manufacturing cigs light absorption layer for solar cell through chemical vapor deposition
JP2001358350A (en) Photovoltaic element

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant