CN103325878A

CN103325878A - P-i-n and InGaN/p-n dual-junction tandem Si solar cell and manufacturing method thereof

Info

Publication number: CN103325878A
Application number: CN2013102144351A
Authority: CN
Inventors: 毕臻; 郝跃; 张进成; 李培咸; 马晓华; 侯耀伟
Original assignee: Xidian University
Current assignee: Xidian University
Priority date: 2013-05-31
Filing date: 2013-05-31
Publication date: 2013-09-25
Anticipated expiration: 2033-05-31
Also published as: CN103325878B

Abstract

The invention discloses a p-i-n and InGaN/p-n dual-junction tandem Si solar cell and a manufacturing method thereof. The solar cell comprises a Si cell, an InGaN cell, and a direct bonding overlaying structure or a come-type middle metal layer based bonding overlaying structure between the Si cell and the InGaN cell in sequence from bottom to top, wherein the Si cell is composed of a p-Si substrate and an n-Si layer, the InGaN cell is composed of a p-InGaN layer, an i-InGaN layer and an n-InGaN layer, a Cr/Ni/Au ohmic contact metal electrode is led out of the n-InGaN layer, and an Al/Au ohmic contact metal electrode is led out of the back side of the p-Si substrate. According to the manufacturing method, a wider spectral response range is achieved by means of the combination of absorption ranges of InGaN and Si. Due to the fact that both an InGaN film and a Si film are adopted as a light absorption layer, InGaN used for absorbing blue violet wavebands and Si used for absorbing visible and infrared wavebands are combined, the light absorption range can be widened, more photon-generated carriers can be generated, effective light absorption is improved, more Voc is obtained, and conversion efficiency of the solar cell is improved. The p-i-n and InGaN/p-n dual-junction tandem Si solar cell can be used for solar photovoltaic power generation.

Description

A kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof

Technical field

The invention belongs to the semiconductor photovoltaic device field, relate to a kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof, can be used for solar energy power generating, the development and use new forms of energy.

Background technology

Along with the energy crisis of global range and going from bad to worse of ecological environment problem, ' inexhaustible, nexhaustible clean energy resource more and more attracts widespread attention solar energy as a kind of.1954 the earliest, U.S.'s Bell Laboratory was at first succeeded in developing first crystalline silicon pn junction type solar cell on the Practical significance, and is applied to very soon space technology.1973, oil crisis outburst, from then on after, people have generally dropped into more and more many concerns for solar cell.Some developed countries have formulated the preferential policy of a series of inspiration photovoltaic generations, and implement huge photovoltaic engineering project, for the solar cell industry has been created good opportunity to develop and the huge market space, the solar cell industry entry high-speed developing period.Now, omiting alternative energy source at the U.S., German this, also is one of following the most suitable human regenerative resource of using.

Professor Nanishi of Japan in 2002 utilizes the RF-MBE method to grow first high-quality InN crystal, and particularly accurately measuring the InN energy gap is 0.7eV, rather than the 1.9eV that before it is believed that.Application and the advantage of InGaN expanded in this new discovery greatly, so that worldwide has started the upsurge of InGaN research.

InGaN is the direct gap semiconductor material, change because of the In component, its energy gap is from 3.4eV (GaN)～0.7eV (InN) is adjustable continuously, its corresponding absorption spectrum wavelength can extend near infrared light 1.7 μ m from ultraviolet light 365nm always, almost intactly covered whole solar spectrum, and can in same equipment, realize the processing compatibility growth of different component InGaN film, be fit to very much the efficient solar battery of preparation sandwich construction.

U.S. Lao Lunsi-the people such as Wu of Berkeley National Laboratory proposed InGaN is applied in the solar cell first in 2003.After this, the research of InGaN solar cell receives much concern all the time.The Georgia Tech of the U.S., University of California Berkeley, University of California--Santa Barbara, University of Minnesota etc., the international well-known universities such as the Fukui University of Japan, Tokyo University, keio university, and domestic Xiamen University, Nanjing University and Semiconductor institute, Chinese Academy of Sciences etc. are all carrying out a large amount of research work aspect the InGaN solar cell.In recent years, many research institutions had reported the battery experiment of various different structures and component successively, attempted improving battery conversion efficiency.

Yet, present InGaN material all exists a large amount of core theory and technical problem not to solve, such as In be separated, the problem such as high dislocation density, high concentration of background carriers, so that the very difficult acquisition of high-quality high In ingredient InGaN film, the actual light response wave length of InGaN battery still concentrates on royal purple optical band (380～420nm), a large amount of solar energies are not absorbed, only utilize the InGaN material as light absorbing material, be difficult to prepare the solar cell of full Spectral matching; On the other hand, the energy gap of Si is about about 1.12eV, prepared battery photoresponse is usually at visible and infrared band, therefore InGaN and Si bi-material are combined, prepare the laminated construction battery, can more effectively utilize the sunlight irradiation energy, improve the total conversion efficiency of battery.

Summary of the invention

The object of the invention is to the condition for prior art, a kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof has been proposed, utilize the absorption region of InGaN and Si material to combine, obtain wider spectral response range, thereby improve the conversion efficiency of battery.

For achieving the above object, the objective of the invention is to realize by following technical proposals.

A kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell comprises Si battery and the InGaN battery of mutual bonding; Described Si battery is made of p-Si substrate and n-Si layer; Described InGaN battery is made of p-InGaN layer, i-InGaN layer and n-InGaN layer; Superpose for the Direct Bonding stack or by pectination metal intermediate layer bonding between described Si battery and the InGaN battery; Lead to Cr/Ni/Au metal ohmic contact electrode at the n-InGaN layer, lead to Al/Au metal ohmic contact electrode at the p-Si substrate back.

Further, described p-Si substrate thickness is 100-300 μ m, and hole concentration is 1 * 10 ¹⁷～6 * 10 ¹⁹/ cm ³Described n-Si layer film thickness is 50-200nm, and electron concentration is 1 * 10 ¹⁸～6 * 10 ²⁰/ cm ³

Further, described p-InGaN layer film thickness is 50～100nm, and the In component is 10%～90%, and hole concentration is 1 * 10 ¹⁷～6 * 10 ¹⁸/ cm ³

The thickness of described i-InGaN layer is 100～800nm, and the In component is 10%～90%, and carrier concentration is 1 * 10 ¹⁶～2 * 10 ¹⁷/ cm ³

Described n-InGaN layer film thickness is 50～100nn, and the In component is 10%～90%, and electron concentration is 1 * 10 ¹⁸～6 * 10 ¹⁹/ cm ³

Further, described metal ohmic contact electrode adopts grid electrode, and electrode width is 500～1000nm, and electrode spacing is 500～3000nm.

Correspondingly, the present invention gives the preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell, and a kind of is to adopt the mode of Direct Bonding that Si battery and InGaN battery are carried out lamination, comprises the steps:

1) adopt the PECVD method to prepare the Si battery at p-Si Grown n-Si layer;

2) adopt MOCVD method on Sapphire Substrate, grow successively p-InGaN layer, i-InGaN layer and n-InGaN layer, preparation InGaN battery;

3) adopt the RIE method, InGaN battery and the Si battery surface for preparing carried out the plasma surface clean;

4) adopt vacuum and low temperature bonding method pre-bonding Si battery and InGaN battery;

5) adopt temperature to be 200～300 ℃ and carry out annealing in process;

6) adopt laser-stripping method that the Sapphire Substrate of InGaN battery is carried out laser lift-off;

7) adopt electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode;

8) adopt electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode.

Further, described cleaning surfaces adopts the RIE method, and InGaN battery and the Si battery surface for preparing carried out the plasma surface clean, and its power is 100～400W, and the pressure of reative cell is 1 * 10 ^-11 * 10 ^-3Pa, clean 1～10min; Utilize Ar ⁺Plasma gas is processed InGaN battery and Si battery surface.

Another kind of preparation method is for adopting the pectination metal intermediate layer as the mode of middle bonded layer Si battery and InGaN battery to be carried out lamination:

1) adopt the PECVD method to prepare the Si battery at p-Si Grown n-Si layer;

3) adopt electron beam evaporation method, in the InGaN battery for preparing and Si battery surface difference evaporation pectination metal intermediate layer;

4) adopt the vacuum and low temperature bonding method that the pectination metal intermediate layer of two batteries is carried out pre-bonding;

5) adopt temperature to be 200～300 ℃ and carry out annealing in process;

Further, described pectination metal intermediate layer is Ti/Au and Ni/Au alloy, and described Ti/Au alloy is 40nm/200nm at Si battery surface thickness, and described Ni/Au alloy is 40nm/200nm at InGaN battery surface thickness.

Among two kinds of preparation methods, when described employing vacuum and low temperature bonding method pre-bonding Si battery and InGaN battery, vacuum degree is 1 * 10 ^-11 * 10 ^-2Pa, bonding temperature are 100～200 ℃.

Among two kinds of preparation methods, described laser-stripping method comprises the steps:

1) adopt the KrF excimer laser as LASER Light Source, pulse frequency is 1～20Hz, and single pulse energy is 50～200mJ;

2) laser beam is focused into the square hot spot that is of a size of 2mm * 2mm respectively by convex lens and concavees lens;

3) the InGaN/Si binode laminated cell behind the bonding is fixed on the electric rotating platform, regulating the rotation platform leg speed is 1.5mm/s;

4) laser facula is from sample edge, adopt the step-by-step system of helix to the sample centre scan, namely, rotation platform temporarily stops after according to setting speed 1.5mm/s rotating 360 degrees, then the center of circle of rotation platform radially moves horizontally 1.5mm laterally, rotation platform is rotated further afterwards, until laser facula arrives the center of circle of rotation platform; Simultaneously with 100～200 ℃ of heated sample of infrared lamp irradiation;

5) behind the complete sample of laser scanning, Sapphire Substrate came off, with 1: 1 HCl:H ₂O acid soak sample is removed the metal Ga of InGaN battery bottom surface.

The present invention has following advantage:

(1) surface treatment of employing InGaN/GaN based material and silicon materials Direct Bonding

Adopted two smooth chip direct bonding methods, by cleaning surfaces and processing, two smooth wafers are directly contacted, the van der waals force by the surface is bonded together in advance, under certain pressure action, make the surface energy of bonding reach the intensity of covalent bond by high-temperature heat treatment.

The evenness of wafer surface, roughness, lattice surface arrange and chemically adsorbed state is the primary factor that affects the direct wafer bonding success.Because the lattice mismatch of InGaN/GaN based material and Si is larger, during therefore direct bonding chip, the combination between the dangling bonds is not fine, is not easy to form complete covalent bond grid, and bond strength is too little, and characteristic electron is poor, is not easy to the carrying out of technique behind the device.

Therefore, the present invention adopts the RIE method before direct bonding chip, use Ar ⁺The plasma effects on surface cleans and processes, thereby reaches the effect of InGaN/GaN based material and silicon materials Direct Bonding.

(2) bonding of metal intermediate layer intervention

The effect of metal intermediate layer is at the bonding of finishing under the lower annealing temperature between the larger interface of material character difference.Because metal has good ductility, can suppress the release of the thermal stress of bonding crystal.The effect of metal level is not still arrived two bonding chips together, but also can be used as the reflector to improve the light release efficiency of device.

Therefore, the present invention is before the bonding bonding, adopt first electron beam evaporation method, at two lower metals of battery surfaces difference evaporation fusing point, such as Au/Ni or Au/Ti alloy, utilize the lower metal of fusing point to have good ductility, can suppress the release of the thermal stress of bonding crystal, thereby at the bonding of finishing under the lower annealing temperature between the larger material of nature difference, reduce high temperature to the impact of battery performance.

Description of drawings

Fig. 1 is the first exemplary construction schematic diagram of solar cell of the present invention;

Fig. 2 is the second exemplary construction schematic diagram of solar cell of the present invention;

Fig. 3 is the process chart that the present invention makes solar cell (the first example), wherein:

Fig. 3 (a) is p-Si substrate layer schematic diagram;

Fig. 3 (b) is at p-Si substrate layer growth n-Si layer schematic diagram;

Fig. 3 (c) is at Grown on Sapphire Substrates n-InGaN layer schematic diagram;

Fig. 3 (d) is at n-InGaN layer growth i-InGaN layer schematic diagram;

Fig. 3 (e) is at i-InGaN layer growth p-InGaN layer schematic diagram;

Fig. 3 (f) carries out Direct Bonding with the surface of p-i-n type InGaN battery and p-n junction Si battery;

Fig. 3 (g) peels off Sapphire Substrate;

Fig. 3 (h) is deposition Ni/Au Ohmic electrode schematic diagram on the n-InGaN layer;

Fig. 3 (i) is at p-Si substrate back depositing Al/Au Ohmic electrode schematic diagram.

Fig. 4 is the process chart that the present invention makes solar cell (the second example), wherein:

Fig. 4 (a) is p-Si substrate layer schematic diagram;

Fig. 4 (b) is at p-Si substrate layer growth n-Si layer schematic diagram;

Fig. 4 (c) is at Grown on Sapphire Substrates n-InGaN layer schematic diagram;

Fig. 4 (d) is at n-InGaN layer growth i-InGaN layer schematic diagram;

Fig. 4 (e) is at i-InGaN layer growth p-InGaN layer schematic diagram;

Fig. 4 (f) is at Si battery surface evaporation Ti/Au electrode;

Fig. 4 (g) is at InGaN battery surface evaporation Ni/Au electrode;

Fig. 4 (h) is the metal level bonding with the surface of p-i-n type InGaN battery and p-n junction Si battery;

Fig. 4 (i) peels off Sapphire Substrate;

Fig. 4 (j) is deposition Ni/Au Ohmic electrode schematic diagram on the n-InGaN layer;

Fig. 4 (k) is at p-Si substrate back depositing Al/Au Ohmic electrode schematic diagram;

Fig. 5 is the laser lift-off schematic diagram of InGaN battery Sapphire Substrate.

Embodiment

Below by specific embodiment concrete structure of the present invention and preparation method are described in further details.

With reference to Fig. 1, shown in Figure 2, this p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell of the present invention comprises Si battery and the InGaN battery of mutual bonding, and the Si battery is made of p-Si substrate and n-Si layer 11; The InGaN battery is made of p-InGaN layer 12, i-InGaN layer 13 and n-InGaN layer 14; Between Si battery and the InGaN battery for Direct Bonding stack (referring to Fig. 1) or by pectination metal intermediate layer 17 bondings stacks (referring to Fig. 2); Lead to Cr/Ni/Au metal ohmic contact electrode 15 at n-InGaN layer 14, lead to Al/Au metal ohmic contact electrode 16 at the p-Si substrate back.Wherein, the p-Si substrate thickness is 100-300 μ m, and hole concentration is 1 * 10 ¹⁷～6 * 10 ¹⁹/ cm ³N-Si layer film thickness is 50-200nm; N-Si layer 11 film thickness are 50-200nm, and electron concentration is 1 * 10 ¹⁸～6 * 10 ²⁰/ cm ³P-InGaN layer 12 film thickness are 50～100nm, and the In component is 10%～90%, and hole concentration is 1 * 10 ¹⁷～6 * 10 ¹⁸/ cm ³The thickness of i-InGaN layer 13 is 100～800nm, and the In component is 10%～90%, and carrier concentration is 1 * 10 ¹⁶～2 * 10 ¹⁷/ cm ³N-InGaN layer 14 film thickness are 50～100nm, and the In component is 10%～90%, and electron concentration is 1 * 10 ¹⁸～6 * 10 ¹⁹/ cm ³Metal ohmic contact electrode 15 adopts grid electrode, and electrode width is 500～1000nm, and electrode spacing is 500～3000nm.

The preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell of the present invention comprises two kinds of different modes:

One, adopt the mode of Direct Bonding that Si battery and InGaN battery are carried out lamination:

1) adopt traditional PECVD method to prepare p-n junction Si battery, at p-Si substrate layer (referring to Fig. 3 (a)) growth n-Si layer (referring to Fig. 3 (b));

2) adopt traditional MOCVD method to prepare p-i-n type InGaN battery, the n-InGaN layer of on Sapphire Substrate, growing successively (referring to Fig. 3 (c)), at n-InGaN layer growth i-InGaN layer (referring to Fig. 3 (d)), at i-InGaN layer growth p-InGaN layer (referring to Fig. 3 (e));

3) adopt the RIE method, utilize Ar ⁺Plasma gas is processed the InGaN battery and the Si battery surface that prepare; The power that adopts is 100～400W; The pressure of reative cell is 1 * 10 ^-1～1 * 10 ^-3Pa; Time is 1～10min;

4) adopting the vacuum and low temperature bonding method, directly contact the p-InGaN layer of the n-Si layer surface of the Si battery for preparing respectively and InGaN battery is surperficial, is 1 * 10 in vacuum degree ^-11 * 10 ^-2Pa, temperature is 100～200 ℃ and carries out pre-bonding (referring to Fig. 3 (f));

5) annealing in process, temperature is 200～300 ℃, makes the surface energy of bonding reach the intensity of covalent bond;

6) adopt laser-stripping method that the Sapphire Substrate of InGaN battery is carried out laser lift-off (referring to Fig. 5);

A) adopt the KrF excimer laser as LASER Light Source, pulse frequency is 1～20Hz, and single pulse energy is 50～200mJ;

B) laser beam is focused into the square hot spot that is of a size of 2mm * 2mm respectively by convex lens and concavees lens;

C) the InGaN/Si binode laminated cell behind the bonding is fixed on the electric rotating platform, regulating the rotation platform leg speed is 1.5mm/s;

D) laser facula is from sample edge, adopt the step-by-step system of helix to the sample centre scan, namely, rotation platform temporarily stops after according to setting speed 1.5mm/s rotating 360 degrees, then the center of circle of rotation platform radially moves horizontally 1.5mm laterally, rotation platform is rotated further afterwards, until laser facula arrives the center of circle of rotation platform; Simultaneously with 100～200 ℃ of heated sample of infrared lamp irradiation;

E) behind the complete sample of laser scanning, Sapphire Substrate came off (referring to Fig. 3 (g)), with 1: 1 HCl:H ₂O solution soaks sample, removes the metal Ga of InGaN battery bottom surface;

7) adopt traditional electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode (referring to Fig. 3 (h));

8) adopt traditional electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode (referring to Fig. 3 (i)).

Two, adopt the mode of pectination bonding metal layer bonding that Si battery and InGaN battery are carried out lamination:

1) adopt traditional PECVD method to prepare p-n junction Si battery, at p-Si substrate layer (referring to Fig. 4 (a)) growth n-Si layer (referring to Fig. 4 (b));

2) adopt traditional MOCVD method to prepare p-i-n type InGaN battery, the n-InGaN layer of on Sapphire Substrate, growing successively (referring to Fig. 4 (c)), at n-InGaN layer growth i-InGaN layer (referring to Fig. 4 (d)), at i-InGaN layer growth p-InGaN layer (referring to Fig. 4 (e));

3) adopt electron beam evaporation method, at the n-Si layer surface of the Si battery for preparing and the p-InGaN layer surface of InGaN battery, respectively evaporation pectination metal intermediate layer Ni/Au electrode and Ti/Au electrode (referring to Fig. 4 (f) Fig. 4 (g));

4) adopt the vacuum and low temperature bonding method that the pectination metal intermediate layer of Si battery and InGaN battery surface is contacted, and be 1 * 10 in vacuum degree ^-1～1 * 10 ^-2Pa, bonding temperature are 100～200 ℃ and carry out pre-bonding (referring to Fig. 4 (h));

E) behind the complete sample of laser scanning, Sapphire Substrate came off (referring to Fig. 4 (i)), with 1: 1 HCl:H ₂O solution soaks sample, removes the metal Ga of InGaN battery bottom surface.

7) adopt electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode (referring to Fig. 4 (j));

8) adopt electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode (referring to Fig. 4 (k)).

Be noted that at last the above only is the preferred embodiments of the present invention, is not limited to the present invention.For a person skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also make some improvement, retouch or be equal to replacement.These improvements and modifications also should be considered as protection scope of the present invention so.

Claims

1. p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell, described Si battery is made of p-Si substrate and n-Si layer (11); Described InGaN battery is made of p-InGaN layer (12), i-InGaN layer (13) and n-InGaN layer (14); It is Direct Bonding overlaying structure or by pectination metal intermediate layer (17) bonding overlaying structure between described Si battery and the InGaN battery; Lead to Cr/Ni/Au metal ohmic contact electrode (15) at n-InGaN layer (14); Lead to Al/Au metal ohmic contact electrode (16) at the p-Si substrate back.

2. p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 1 is characterized in that, described p-Si substrate thickness is 100-300 μ m, and hole concentration is 1 * 10 ¹⁷～6 * 10 ¹⁹/ cm ³Described n-Si layer (11) film thickness is 50-200nm, and electron concentration is 1 * 10 ¹⁸～6 * 10 ²⁰/ cm ³

3. p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 1 is characterized in that, described p-InGaN layer (12) film thickness is 50～100nm, and the In component is 10%～90%, and hole concentration is 1 * 10 ¹⁷～6 * 10 ¹⁸/ cm ³

The thickness of described i-InGaN layer (13) is 100～800nm, and the In component is 10%～90%, and carrier concentration is 1 * 10 ¹⁶～2 * 10 ¹⁷/ cm ³

Described n-InGaN layer (14) film thickness is 50～100nm, and the In component is 10%～90%, and electron concentration is 1 * 10 ¹⁸～6 * 10 ¹⁹/ cm ³

4. p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 1 is characterized in that, described metal ohmic contact electrode (15) adopts grid electrode, and electrode width is 500～1000nm, and electrode spacing is 500～3000nm.

5. the preparation method of a p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell is characterized in that, comprises the steps:

Adopt the mode of Direct Bonding that Si battery and InGaN battery are carried out lamination:

1) adopt the PECVD method at p-Si Grown n-Si layer (11) preparation Si battery;

2) adopt MOCVD method on Sapphire Substrate, grow successively p-InGaN layer (12), i-InGaN layer (13) and n-InGaN layer (14), prepare the InGaN battery;

5) adopt temperature to be 200～300 ℃ and carry out annealing in process;

6. the preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 5 is characterized in that, described employing RIE method is carried out the plasma surface clean to InGaN battery and the Si battery surface for preparing, and utilizes Ar ⁺Plasma gas is processed InGaN battery and Si battery surface; Its power is 100～400W, and the pressure of reative cell is 1 * 10 ^-1～1 * 10 ^-3Pa, the clean time is 1～10min.

7. the preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 5, it is characterized in that, described preparation method further comprises: adopt pectination metal intermediate layer (17) as the mode of middle bonded layer Si battery and InGaN battery to be carried out lamination:

1) adopt the PECVD method at p-Si Grown n-Si layer (11) preparation Si battery;

4) adopt the vacuum and low temperature bonding method that the pectination metal intermediate layer (17) of two batteries is carried out pre-bonding;

5) adopt temperature to be 200～300 ℃ and carry out annealing in process;

8. the preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 7, it is characterized in that, described pectination metal intermediate layer (17) is Ti/Au and Ni/Au alloy, described Ti/Au alloy is 40nm/200nm at Si battery surface thickness, and described Ni/Au alloy is 40nm/200nm at InGaN battery surface thickness.

9. such as the preparation method of claim 5 or 7 described p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cells, it is characterized in that described employing vacuum and low temperature bonding method pre-bonding Si battery and InGaN battery, vacuum degree 1 * 10 ^-1～1 * 10 ^-2Pa, bonding temperature are 100～200 ℃.

10. such as the preparation method of claim 5 or 7 described p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cells, it is characterized in that, described laser-stripping method comprises the steps: