CN106653926B - A kind of phasmon enhancing GaAs Quito connection solar cell and preparation method thereof - Google Patents
A kind of phasmon enhancing GaAs Quito connection solar cell and preparation method thereof Download PDFInfo
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- CN106653926B CN106653926B CN201710057830.1A CN201710057830A CN106653926B CN 106653926 B CN106653926 B CN 106653926B CN 201710057830 A CN201710057830 A CN 201710057830A CN 106653926 B CN106653926 B CN 106653926B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 124
- 238000002360 preparation method Methods 0.000 title claims abstract description 84
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 26
- 239000002105 nanoparticle Substances 0.000 claims abstract description 29
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 14
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 148
- 238000000034 method Methods 0.000 claims description 41
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 35
- 229910052785 arsenic Inorganic materials 0.000 claims description 35
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 35
- 229910052733 gallium Inorganic materials 0.000 claims description 35
- 238000000137 annealing Methods 0.000 claims description 19
- 238000005566 electron beam evaporation Methods 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 15
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- 206010040844 Skin exfoliation Diseases 0.000 claims description 5
- 230000035618 desquamation Effects 0.000 claims description 5
- 239000002923 metal particle Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000013339 cereals Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of phasmon enhancing GaAs Quito connection solar cell, include hearth electrode, In successively from the bottom to top0.3Ga0.7As bottoms battery, tunnel junctions, GaAs top batteries and top electrode；The In0.3Ga0.7As bottoms battery includes p In successively from the bottom to top0.3Ga0.7As films, the first n In0.3Ga0.7As films, Ag/Al alloy nanoparticles layer and the 2nd n In0.3Ga0.7As films.The invention also discloses the preparation method of above-mentioned phasmon enhancing GaAs Quito connection solar cell.Phasmon enhancing GaAs Quito connection solar cell photoelectric conversion efficiency of the present invention is high and manufacturing cost is low.
Description
Technical field
The present invention relates to solar cell field, more particularly to a kind of phasmon enhancing GaAs Quito connection solar cells and its
Preparation method.
Background technology
GaAs based compound solar cells, because its higher photoelectric conversion efficiency, good anti-radiation performance and space are steady
The advantage such as qualitative is developed rapidly in recent years, is the main power supply source of current spacecraft.More knot sun electricity at present
It is InGaP/GaAs/Ge structure batteries that more system is studied in pond, though traditional multijunction solar cell can improve the photoelectricity of device
Transfer efficiency, however as the number of plies increase multijunction cell there is also some it is new the problem of.First, the InGaP/GaAs/Ge sun
Cell band gap arrangement is 1.84/1.42/0.67eV, and the larger band gap mismatch of the sub- junction battery of bottom battery and centre causes Ge batteries
In photogenerated current be more than electric current in other sub- knots, and the electric current for tying stacked solar cell, cascade solar cell more depends on minimum light in son knot
Raw electric current, therefore current mismatch will cause part photogenerated current to lose and then influence device efficiency；Secondly, it is to tie lamination sun electricity more
Pond is stringent to material component requirement, and device is substantially increased in the complexity and cost of the link such as design preparation and test, device
Manufacturing cost it is high also be exactly iii-v solar cell can not really realize the main reason for civilian.Therefore research how
Effectively simplify the preparation process cost of device while retainer member high photoelectric conversion efficiency, tool is of great significance.
The content of the invention
In order to overcome the disadvantages mentioned above of the prior art and deficiency, it is an object of the invention to provide a kind of enhancing of phasmon
GaAs Quito connection solar cell, photoelectric conversion efficiency is high and cost is low.
Another object of the present invention is to provide the preparation method of above-mentioned phasmon enhancing GaAs Quito connection solar cell.
The purpose of the present invention is achieved through the following technical solutions：
A kind of phasmon enhancing GaAs Quito connection solar cell, includes hearth electrode, In successively from the bottom to top0.3Ga0.7As
Bottom battery, tunnel junctions, GaAs top batteries and top electrode；The In0.3Ga0.7As bottoms battery includes p- successively from the bottom to top
In0.3Ga0.7As films, the first n-In0.3Ga0.7As films, Ag/Al alloy nanoparticles layer and the 2nd n-In0.3Ga0.7As is thin
Film.
The p-In0.3Ga0.7The thickness of As films is 60-600 nanometers, and doping concentration is 2 × 1017-5×1017cm-3；Institute
State the first n-In0.3Ga0.7The thickness of As films is 20-80 nanometers, and doping concentration is 2 × 1017~5 × 1017cm-3；The Ag/
Ag/Al nano-metal particles average height in Al alloy nanoparticle layers is 10-20 nanometers, and average diameter is 10-30 nanometers；
2nd n-In0.3Ga0.7The thickness of As films is 80-250 nanometers；Doping concentration is 2 × 1017~5 × 1017cm-3。
The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs films and p-GaAs films, institute successively from the bottom to top
N-GaAs film thicknesses are stated as 3-8 nanometers, doping concentration is 1 × 1018~5 × 1018cm-3；The thickness of the p-GaAs films is
3-8 nanometers, doping concentration is 1 × 1018~5 × 1018cm-3。
GaAs tops battery includes p-GaAs films and n-GaAs films successively from the bottom to top；The p-GaAs films are thick
Spend for 100-800 nanometers, doping concentration is 1.5 × 1017-4×1018cm-3；The thickness of the n-GaAs films is 2-5 microns,
Doping concentration is 1 × 1017-3×1017cm-3。
The hearth electrode is AuGeNi films, and thickness is 300-600 nanometers.
The top electrode is Au films, and thickness is 300-600 nanometers.
The preparation method of phasmon enhancing GaAs Quito connection solar cell, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As films：P- is grown on substrate using molecular beam epitaxy system
In0.3Ga0.7As films, growth temperature are 400-600 DEG C, and when growth time is 0.5-2 small, gallium source oven temperature degree is 800-1000
DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Zn source oven temperatures degree is 300-800 DEG C；
(1-2) the first n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The first n-In of upper preparation0.3Ga0.7As films, growth temperature be 400-600 DEG C, growth time for 20 minutes -1 it is small when, gallium source stove
Temperature is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-
1200℃；
The preparation of (1-3) Ag/Al alloy nanoparticle layers：Using electron beam evaporation method in the first n-In0.3Ga0.7As is thin
Al/Ag nano particles are grown on film, growth power is 200-400 watts, and growth time is 20-200 seconds；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The 2nd n-In of upper preparation0.3Ga0.7As films, growth temperature are 400-600 DEG C, and when growth time is 1-3 small, gallium source oven temperature degree is
800-1000 DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-1200
℃；
(2) preparation of GaAs tunnel junctions：Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N- is grown on As films
GaAs films, growth temperature are 400-600 DEG C, and growth time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, arsenic
Source oven temperature degree is 200-400 DEG C, and Si source oven temperatures degree is 500-1200 DEG C；
P-GaAs films are grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 400-600 DEG C,
Growth time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Zn source oven temperature degree
For 300-800 DEG C；
(3) GaAs pushes up the preparation of battery：
The preparation of (3-1) p-GaAs films：P-GaAs films, growth temperature 300- are grown using molecular beam epitaxy system
600 DEG C, when growth time is 1-5 small, gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Zn source oven temperatures
Spend for 300-800 DEG C；
The preparation of (3-2) n-GaAs films：N-GaAs films, growth temperature 300- are grown using molecular beam epitaxy system
600 DEG C, when growth time is 5-10 small, gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Si sources stove
Temperature is 500-1200 DEG C；
(4) preparation of hearth electrode：Laser substrate desquamation method is used first by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density 200-3000mJ/cm2, splitting time is 10-20 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, growth power 200-
400 watts, growth time is 20-200 minutes growth hearth electrodes；Anneal after having grown hearth electrode, annealing temperature 200-400
DEG C, annealing time is 10-60 minutes；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100-300 watts, raw
It is 30-100 minutes for a long time；Anneal after having grown top electrode, annealing temperature is 200-400 DEG C, annealing time 10-60
Minute.
Compared with prior art, the present invention has the following advantages and beneficial effect：
(1) present invention is by In0.3Ga0.7As inside batteries introduce Al/Ag alloy nanoparticles, utilize alloying pellet
Scattering section enhancing to the scattering effect of sunlight, while utilize Localized field enhancement solar cell strong around nano particle
Light absorbs, finally realize the high photoelectric conversion efficiency of battery.
(2) present invention strengthens the photoelectric conversion efficiency of iii-v GaAs base solar cells by metal surface phasmon,
Realize the preparation of low-cost high-efficiency GaAs base solar cells.By using the In of 1eV0.3Ga0.7The As and GaAs structure binode sun
Battery, can effectively widen the utilization scope to solar spectrum, while meet band-gap condition and every layer between sub- junction battery
With higher crystal quality, the photoelectric efficiency of battery is finally effectively improved.
(3) preparation method of the invention is easy and effective, and device preparation technology cost substantially reduces, cell photoelectric transfer efficiency
Enhancing effect is obvious.
Brief description of the drawings
Fig. 1 is that the phasmon of the embodiment of the present invention strengthens the structure diagram of GaAs Quito connection solar cell.
Fig. 2 is that the phasmon of the embodiment of the present invention strengthens the scanning electron microscope photograph of GaAs Quito connection solar cell
Piece.
Fig. 3 is the absorption spectra of the Al/Ag nano particles of the embodiment of the present invention.
Fig. 4 is that the phasmon of the embodiment of the present invention strengthens GaAs Quito connection solar cells in introducing Ag/Al nanometers
Current-voltage relation curve figure before and after grain.
Embodiment
With reference to embodiment, the present invention is described in further detail, but the implementation of the present invention is not limited to this.
Embodiment 1
As shown in Figure 1, phasmon enhancing GaAs Quito connection solar cell of the present embodiment, includes bottom successively from the bottom to top
Electrode 1, In0.3Ga0.7As bottoms battery 2, tunnel junctions 3, GaAs top batteries 4 and top electrode 5.
The preparation method of phasmon enhancing GaAs Quito connection solar cell of the present embodiment, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As films：P- is grown on substrate using molecular beam epitaxy system
In0.3Ga0.7As films, growth temperature are 590 DEG C, and when growth time is 2 small, gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is
285 DEG C, In source oven temperatures degree is 710 DEG C, and Zn source oven temperatures degree is 400 DEG C；
The p-In0.3Ga0.7The thickness of As films is 200 nanometers, and doping concentration is 3 × 1017cm-3；
(1-2) the first n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The first n-In of upper preparation0.3Ga0.7As films, growth temperature are 590 DEG C, and when growth time is 1 small, gallium source oven temperature degree is 950 DEG C,
Arsenic source oven temperature degree is 285 DEG C, and In source oven temperatures degree is 710 DEG C, and Si source oven temperatures degree is 600 DEG C；
First n-In0.3Ga0.7The thickness of As films is 50 nanometers, and doping concentration is 5 × 1017cm-3；
The preparation of (1-3) Ag/Al alloy nanoparticle layers：Using electron beam evaporation method in the first n-In0.3Ga0.7As is thin
Al/Ag nano particles are grown on film, growth power is 300 watts, and growth time is 60 seconds；
Ag/Al nano-metal particles average height in the Ag/Al alloy nanoparticles layer is 15 nanometers, average diameter
For 15 nanometers；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The 2nd n-In of upper preparation0.3Ga0.7As films, growth temperature are 590 DEG C, and when growth time is 3 small, gallium source oven temperature degree is 950 DEG C,
Arsenic source oven temperature degree is 285 DEG C, and In source oven temperatures degree is 710 DEG C, and Si source oven temperatures degree is 600 DEG C；
2nd n-In0.3Ga0.7The thickness of As films is 200 nanometers；Doping concentration is 3 × 1017cm-3；
(2) preparation of GaAs tunnel junctions：The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs successively from the bottom to top
Film and p-GaAs films, the n-GaAs film thicknesses are 5 nanometers, and doping concentration is 3 × 1018cm-3；The p-GaAs is thin
The thickness of film is 5 nanometers, and doping concentration is 3 × 1018cm-3；
Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs films are grown on As films, growth temperature is
580 DEG C, growth time is 3 minutes, and gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Si source oven temperatures degree is 600 DEG C；
P-GaAs films are grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 580 DEG C, growth
Time is 3 minutes, and gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Zn source oven temperatures degree is 600 DEG C；
(3) GaAs pushes up the preparation of battery：
The preparation of (3-1) p-GaAs films：P-GaAs films, growth temperature 580 are grown using molecular beam epitaxy system
DEG C, when growth time is 3 small, gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Zn source oven temperatures degree is 600 DEG C；
The p-GaAs film thicknesses are 500 nanometers, and doping concentration is 3 × 1018cm-3；
The preparation of (3-2) n-GaAs films：N-GaAs films, growth temperature 580 are grown using molecular beam epitaxy system
DEG C, when growth time is 8 small, gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Si source oven temperatures degree is 600 DEG C；
The thickness of the n-GaAs films is 3 microns, and doping concentration is 2 × 1017cm-3；
(4) preparation of hearth electrode：Laser substrate desquamation method is used first by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density 2000mJ/cm2, splitting time is 15 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 300 watts,
Growth time is 30 minutes growth hearth electrodes；Anneal after having grown hearth electrode, annealing temperature is 400 DEG C, and annealing time is
10 minutes；The hearth electrode is AuGeNi films, and thickness is 200 nanometers；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100 watts, during growth
Between be 30 minutes；Anneal after having grown top electrode, annealing temperature is 400 DEG C, and annealing time is 10 minutes；The top electrode
For Au films, thickness is 300 nanometers.
Fig. 2 is the electron scanning micrograph of the Ag/Al nano particles of the present embodiment, as can be seen from the figure Al/Ag
The distribution of nano particle is visibly homogeneous, and the average diameter of particle is about 15 nanometers.Fig. 3 is the absorption spectra of Al/Ag nano particles, can
To find out that nano particle has obvious absworption peak, therefore the absorption and scattering for passing through nano particle in 450-650 nanometer ranges
Effect can significantly improve the optical absorption of solar cell.Can from the solar cell current-voltage relation curve of Fig. 4
Go out, the efficiency of simple GaAs Quito connection solar cell is 28.50%, by the introducing of Ag/Al nano particles, due to battery
Open-circuit voltage improves, and fill factor, curve factor is improved, and the photoelectric conversion efficiency of battery brings up to 32.46%.
In of the present invention in GaAs Quito connection solar cell0.3Ga0.7Al/Ag nano particles are introduced in As junction batteries, by
It in the surface plasmons of nano particle, on the one hand can strengthen the scattering process to incident sunlight, improve too
Propagation distance of the sunlight inside active area is so as to improve light absorbs.Meanwhile the local surface phasmon of Al/Ag nano particles
After being excited, strong local electric field can be formed around particle, according to Fermi's Golden-rule, this strong local electric field can carry
The absorption rate of high battery incident photon, therefore a kind of phasmon prepared by the present invention strengthens GaAs Quito connection solar cell
Photoelectric conversion efficiency is significantly improved.
Embodiment 2
The preparation method of phasmon enhancing GaAs Quito connection solar cell of the present embodiment, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As films：P- is grown on substrate using molecular beam epitaxy system
In0.3Ga0.7As films, growth temperature are 400 DEG C, and when growth time is 0.5 small, gallium source oven temperature degree is 800 DEG C, arsenic source oven temperature degree
For 200 DEG C, In source oven temperatures degree is 600 DEG C, and Zn source oven temperatures degree is 300 DEG C；
The p-In0.3Ga0.7The thickness of As films is 60 nanometers, and doping concentration is 2 × 1017cm-3；
(1-2) the first n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The first n-In of upper preparation0.3Ga0.7As films, growth temperature are 400 DEG C, and growth time is 20 minutes, and gallium source oven temperature degree is 800
DEG C, arsenic source oven temperature degree is 200 DEG C, and In source oven temperatures degree is 600 DEG C, and Si source oven temperatures degree is 500 DEG C；
First n-In0.3Ga0.7The thickness of As films is 20 nanometers, and doping concentration is 3 × 1017cm-3；
The preparation of (1-3) Ag/Al alloy nanoparticle layers：Using electron beam evaporation method in the first n-In0.3Ga0.7As is thin
Al/Ag nano particles are grown on film, growth power is 200 watts, and growth time is 20 seconds；
Ag/Al nano-metal particles average height in the Ag/Al alloy nanoparticles layer is 10 nanometers, average diameter
For 10 nanometers；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The 2nd n-In of upper preparation0.3Ga0.7As films, growth temperature are 400 DEG C, and when growth time is 1 small, gallium source oven temperature degree is 800 DEG C,
Arsenic source oven temperature degree is 200 DEG C, and In source oven temperatures degree is 600 DEG C, and Si source oven temperatures degree is 500 DEG C；
2nd n-In0.3Ga0.7The thickness of As films is 200 nanometers；Doping concentration is 3 × 1017cm-3；
(2) preparation of GaAs tunnel junctions：The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs successively from the bottom to top
Film and p-GaAs films, the n-GaAs film thicknesses are 3 nanometers, and doping concentration is 3 × 1018cm-3；The p-GaAs is thin
The thickness of film is 3 nanometers, and doping concentration is 3 × 1018cm-3；
Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs films are grown on As films, growth temperature is
400 DEG C, growth time is 2 minutes, and gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Si source oven temperatures degree is 500 DEG C；
P-GaAs films are grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 400 DEG C, growth
Time is 2 minutes, and gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Zn source oven temperatures degree is 300 DEG C；
(3) GaAs pushes up the preparation of battery：
The preparation of (3-1) p-GaAs films：P-GaAs films, growth temperature 300 are grown using molecular beam epitaxy system
DEG C, when growth time is 1 small, gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Zn source oven temperatures degree is 300 DEG C；
The p-GaAs film thicknesses are 100-800 nanometers, and doping concentration is 1.5 × 1017-4×1018cm-3；
The preparation of (3-2) n-GaAs films：N-GaAs films, growth temperature 300 are grown using molecular beam epitaxy system
DEG C, when growth time is 5 small, gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Si source oven temperatures degree is 500 DEG C；
The thickness of the n-GaAs films is 2 microns, and doping concentration is 1 × 1017cm-3；
(4) preparation of hearth electrode：Laser substrate desquamation method is used first by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density 200mJ/cm2, splitting time is 10 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 200 watts,
Growth time is 20 minutes growth hearth electrodes；Anneal after having grown hearth electrode, annealing temperature is 200 DEG C, and annealing time is
10 minutes；The hearth electrode is AuGeNi films, and thickness is 300 nanometers；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100 watts, during growth
Between be 30 minutes；Anneal after having grown top electrode, annealing temperature is 200 DEG C, and annealing time is 10 minutes；The top electrode
For Au films, thickness is 300 nanometers.
The test result of phasmon enhancing GaAs Quito connection solar cell of the present embodiment is similar to Example 1, herein
Repeat no more.
Embodiment 3
The preparation method of phasmon enhancing GaAs Quito connection solar cell of the present embodiment, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As films：P- is grown on substrate using molecular beam epitaxy system
In0.3Ga0.7As films, growth temperature are 600 DEG C, and when growth time is 2 small, gallium source oven temperature degree is 1000 DEG C, arsenic source oven temperature degree
For 400 DEG C, In source oven temperatures degree is 800 DEG C, and Zn source oven temperatures degree is 800 DEG C；
The p-In0.3Ga0.7The thickness of As films is 600 nanometers, and doping concentration is 5 × 1017cm-3；
(1-2) the first n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The first n-In of upper preparation0.3Ga0.7As films, growth temperature are 600 DEG C, and when growth time is 1 small, gallium source oven temperature degree is 1000
DEG C, arsenic source oven temperature degree is 400 DEG C, and In source oven temperatures degree is 800 DEG C, and Si source oven temperatures degree is 1200 DEG C；
First n-In0.3Ga0.7The thickness of As films is 80 nanometers, and doping concentration is 5 × 1017cm-3；
The preparation of (1-3) Ag/Al alloy nanoparticle layers：Using electron beam evaporation method in the first n-In0.3Ga0.7As is thin
Al/Ag nano particles are grown on film, growth power is 400 watts, and growth time is 200 seconds；
Ag/Al nano-metal particles average height in the Ag/Al alloy nanoparticles layer is 20 nanometers, average diameter
For 30 nanometers；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7As films
The 2nd n-In of upper preparation0.3Ga0.7As films, growth temperature are 600 DEG C, and when growth time is 3 small, gallium source oven temperature degree is 1000
DEG C, arsenic source oven temperature degree is 400 DEG C, and In source oven temperatures degree is 800 DEG C, and Si source oven temperatures degree is 1200 DEG C；
2nd n-In0.3Ga0.7The thickness of As films is 250 nanometers；Doping concentration is 5 × 1017cm-3；
(2) preparation of GaAs tunnel junctions：The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs successively from the bottom to top
Film and p-GaAs films, the n-GaAs film thicknesses are 8 nanometers, and doping concentration is 5 × 1018cm-3；The p-GaAs is thin
The thickness of film is 8 nanometers, and doping concentration is 5 × 1018cm-3；
Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs films are grown on As films, growth temperature is
600 DEG C, growth time is 5 minutes, and gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Si source oven temperatures degree is 1200
℃；
P-GaAs films are grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 600 DEG C, growth
Time is 5 minutes, and gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Zn source oven temperatures degree is 800 DEG C；
(3) GaAs pushes up the preparation of battery：
The preparation of (3-1) p-GaAs films：P-GaAs films, growth temperature 600 are grown using molecular beam epitaxy system
DEG C, when growth time is 5 small, gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Zn source oven temperatures degree is 800 DEG C；
The p-GaAs film thicknesses are 800 nanometers, and doping concentration is 4 × 1018cm-3；
The preparation of (3-2) n-GaAs films：N-GaAs films, growth temperature 600 are grown using molecular beam epitaxy system
DEG C, when growth time is 10 small, gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Si source oven temperatures degree is 1200 DEG C；
The thickness of the n-GaAs films is 5 microns, and doping concentration is 3 × 1017cm-3；
(4) preparation of hearth electrode：Laser substrate desquamation method is used first by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density 3000mJ/cm2, splitting time is 20 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 400 watts,
Growth time is 200 minutes growth hearth electrodes；Anneal after having grown hearth electrode, annealing temperature is 400 DEG C, and annealing time is
60 minutes；The hearth electrode is AuGeNi films, and thickness is 600 nanometers；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 300 watts, during growth
Between be 100 minutes；Anneal after having grown top electrode, annealing temperature is 400 DEG C, and annealing time is 60 minutes；The top electricity
Extremely Au films, thickness are 600 nanometers.
The test result of phasmon enhancing GaAs Quito connection solar cell of the present embodiment is similar to Example 1, herein
Repeat no more.
Above-described embodiment is the preferable embodiment of the present invention, but embodiments of the present invention and from the embodiment
Limitation, other any Spirit Essences without departing from the present invention with made under principle change, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (7)
1. the preparation method of phasmon enhancing GaAs Quito connection solar cell, it is characterised in that comprise the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As films：P-In is grown on substrate using molecular beam epitaxy system0.3Ga0.7As is thin
Film, growth temperature are 400-600 DEG C, and when growth time is 0.5-2 small, gallium source oven temperature degree is 800-1000 DEG C, arsenic source oven temperature degree
For 200-400 DEG C, In source oven temperatures degree is 600-800 DEG C, and Zn source oven temperatures degree is 300-800 DEG C；
(1-2) the first n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7Made on As films
Standby first n-In0.3Ga0.7As films, growth temperature be 400-600 DEG C, growth time for 20 minutes -1 it is small when, gallium source oven temperature degree
For 800-1000 DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-1200
℃；
The preparation of (1-3) Ag/Al alloy nanoparticle layers：Using electron beam evaporation method in the first n-In0.3Ga0.7On As films
Al/Ag nano particles are grown, growth power is 200-400 watts, and growth time is 20-200 seconds；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As films：Using molecular beam epitaxial method in p-In0.3Ga0.7Made on As films
Standby 2nd n-In0.3Ga0.7As films, growth temperature are 400-600 DEG C, and when growth time is 1-3 small, gallium source oven temperature degree is 800-
1000 DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-1200 DEG C；
(2) preparation of GaAs tunnel junctions：Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs is grown on As films
Film, growth temperature are 400-600 DEG C, and growth time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, arsenic source stove
Temperature is 200-400 DEG C, and Si source oven temperatures degree is 500-1200 DEG C；
P-GaAs films are grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 400-600 DEG C, growth
Time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, and Zn source oven temperature degree is
300-800℃；
(3) GaAs pushes up the preparation of battery：
The preparation of (3-1) p-GaAs films：P-GaAs films, growth temperature 300-600 are grown using molecular beam epitaxy system
DEG C, when growth time is 1-5 small, gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Zn source oven temperature degree
For 300-800 DEG C；
The preparation of (3-2) n-GaAs films：N-GaAs films, growth temperature 300-600 are grown using molecular beam epitaxy system
DEG C, when growth time is 5-10 small, gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Si source oven temperature degree
For 500-1200 DEG C；
(4) preparation of hearth electrode：Laser substrate desquamation method is used first by In0.3Ga0.7As bottoms battery is peeled off with substrate,
Laser energy density is 200-3000mJ/cm2, splitting time is 10-20 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 200-400 watts,
Growth time is 20-200 minutes growth hearth electrodes；Anneal after having grown hearth electrode, annealing temperature is 200-400 DEG C, is moved back
The fiery time is 10-60 minutes；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100-300 watts, during growth
Between be 30-100 minutes；Anneal after having grown top electrode, annealing temperature is 200-400 DEG C, and annealing time is 10-60 points
Clock.
2. the preparation method of phasmon enhancing GaAs Quito connection solar cell according to claim 1, it is characterised in that
Phasmon enhancing GaAs Quito connection solar cell includes hearth electrode, In successively from the bottom to top0.3Ga0.7As bottoms battery, tunnel
Wear knot, GaAs top batteries and top electrode；The In0.3Ga0.7As bottoms battery includes p-In successively from the bottom to top0.3Ga0.7As films,
First n-In0.3Ga0.7As films, Ag/Al alloy nanoparticles layer and the 2nd n-In0.3Ga0.7As films.
3. the preparation method of phasmon enhancing GaAs Quito connection solar cell according to claim 1, it is characterised in that
The p-In0.3Ga0.7The thickness of As films is 60-600 nanometers, and doping concentration is 2 × 1017-5×1017cm-3；First n-
In0.3Ga0.7The thickness of As films is 20-80 nanometers, and doping concentration is 2 × 1017~5 × 1017cm-3；The Ag/Al alloys are received
Ag/Al nano-metal particles average height in rice grain layer is 10-20 nanometers, and average diameter is 10-30 nanometers；Described second
n-In0.3Ga0.7The thickness of As films is 80-250 nanometers；Doping concentration is 2 × 1017~5 × 1017cm-3。
4. the preparation method of phasmon enhancing GaAs Quito connection solar cell according to claim 1, it is characterised in that
The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs films and p-GaAs films, the n-GaAs successively from the bottom to top
Film thickness is 3-8 nanometers, and doping concentration is 1 × 1018~5 × 1018cm-3；The thickness of the p-GaAs films is 3-8 nanometers,
Doping concentration is 1 × 1018~5 × 1018cm-3。
5. the preparation method of phasmon enhancing GaAs Quito connection solar cell according to claim 1, it is characterised in that
GaAs tops battery includes p-GaAs films and n-GaAs films successively from the bottom to top；The p-GaAs film thicknesses are 100-
800 nanometers, doping concentration is 1.5 × 1017-4×1018cm-3；The thickness of the n-GaAs films is 2-5 microns, doping concentration
For 1 × 1017-3×1017cm-3。
6. the preparation method of phasmon enhancing GaAs Quito connection solar cell according to claim 1, it is characterised in that
The hearth electrode is AuGeNi films, and thickness is 300-600 nanometers.
7. the preparation method of phasmon enhancing GaAs Quito connection solar cell according to claim 1, it is characterised in that
The top electrode is Au films, and thickness is 300-600 nanometers.
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