CN106653926A - Plasmon enhanced GaAs-based multi-junction solar cell and preparation method thereof - Google Patents
Plasmon enhanced GaAs-based multi-junction solar cell and preparation method thereof Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 125
- 238000002360 preparation method Methods 0.000 title claims abstract description 80
- 239000010409 thin film Substances 0.000 claims abstract description 132
- 239000002105 nanoparticle Substances 0.000 claims abstract description 29
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 14
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 41
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 35
- 229910052785 arsenic Inorganic materials 0.000 claims description 35
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 35
- 229910052733 gallium Inorganic materials 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 19
- 238000005566 electron beam evaporation Methods 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 15
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 15
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 10
- 206010040844 Skin exfoliation Diseases 0.000 claims description 5
- 230000035618 desquamation Effects 0.000 claims description 5
- 239000002923 metal particle Substances 0.000 claims description 5
- 229910002070 thin film alloy Inorganic materials 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000013339 cereals Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000005641 tunneling Effects 0.000 abstract 1
- 230000009466 transformation Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/0264—Inorganic materials
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- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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Abstract
The invention discloses a plasmon enhanced GaAs-based multi-junction solar cell. The plasmon enhanced GaAs-based multi-junction solar cell sequentially comprises a bottom electrode, a In<0.3>Ga<0.7>As bottom battery, a tunneling junction, a GaAs top battery and a top electrode from bottom to top, wherein the In<0.3>Ga<0.7>As bottom battery sequentially comprises a p-In<0.3>Ga<0.7>As thin film, a first n-In<0.3>Ga<0.7>As thin film, a Ag/Al alloy nanoparticle layer and a second n-In<0.3>Ga<0.7>As thin film. The invention also discloses a preparation method of the plasmon enhanced GaAs-based multi-junction solar cell. The plasmon enhanced GaAs-based multi-junction solar cell disclosed by the invention is high in photoelectric conversion efficiency and low in preparation cost.
Description
Technical field
The present invention relates to solar cell field, more particularly to a kind of phasmon strengthen GaAs Quito connection solar cells and its
Preparation method.
Background technology
GaAs based compound solar cells, because of its higher photoelectric transformation efficiency, good anti-radiation performance and space is steady
The advantage such as qualitative is developed rapidly in recent years, is the main power supply source of current spacecraft.At present many knot sun are electric
It is InGaP/GaAs/Ge structure batteries that more system is studied in pond, though traditional multijunction solar cell can improve the photoelectricity of device
Conversion efficiency, however as the multijunction cell that increases of the number of plies some new problems are there is also.First, the InGaP/GaAs/Ge sun
Cell band gap arrangement is 1.84/1.42/0.67eV, and the larger band gap mismatch of bottom battery and middle sub- junction battery causes Ge batteries
In photogenerated current more than the electric current in other sub- knots, and the electric current for tying stacked solar cell, cascade solar cell more depends on light minimum in son knot
Raw electric current, therefore current mismatch will cause part photogenerated current loss and then impact device efficiency；Secondly, tie lamination sun electricity more
Pond requires material component that strictly device is substantially increased in the complexity and cost of the link such as design preparation and test, device
Preparation cost high also exactly iii-v solar cell cannot really realize civilian main cause.Therefore how research exist
Effectively simplify the preparation technology cost of device while retainer member high photoelectric transformation efficiency, tool is of great significance.
The content of the invention
In order to overcome the disadvantages mentioned above and deficiency of prior art, it is an object of the invention to provide a kind of phasmon strengthens
GaAs Quito connection solar cell, photoelectric transformation efficiency height and low cost.
Another object of the present invention is to providing above-mentioned phasmon strengthens the preparation method of GaAs Quito connection solar cell.
The purpose of the present invention is achieved through the following technical solutions：
A kind of phasmon strengthens GaAs Quito connection solar cell, includes hearth electrode, In successively from the bottom to top0.3Ga0.7As
Bottom battery, tunnel junctions, GaAs top batteries and top electrode；The In0.3Ga0.7As bottoms battery includes successively from the bottom to top p-
In0.3Ga0.7As thin film, a n-In0.3Ga0.7As thin film, Ag/Al alloy nanoparticles layer and the 2nd n-In0.3Ga0.7As is thin
Film.
The p-In0.3Ga0.7The thickness of As thin film is 60-600 nanometers, and doping content is 2 × 1017-5×1017cm-3；Institute
State a n-In0.3Ga0.7The thickness of As thin film is 20-80 nanometers, and doping content is 2 × 1017～5 × 1017cm-3；The Ag/
Ag/Al nano-metal particles average height in Al alloy nanoparticle layers is 10-20 nanometers, and average diameter is 10-30 nanometers；
2nd n-In0.3Ga0.7The thickness of As thin film is 80-250 nanometers；Doping content is 2 × 1017～5 × 1017cm-3。
The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs thin film and p-GaAs thin film, institute successively from the bottom to top
It is 3-8 nanometers to state n-GaAs film thicknesses, and doping content is 1 × 1018～5 × 1018cm-3；The thickness of the p-GaAs thin film is
3-8 nanometers, doping content is 1 × 1018～5 × 1018cm-3。
GaAs tops battery includes successively from the bottom to top p-GaAs thin film and n-GaAs thin film；The p-GaAs thin film is thick
Spend for 100-800 nanometers, doping content is 1.5 × 1017-4×1018cm-3；The thickness of the n-GaAs thin film is 2-5 microns,
Doping content is 1 × 1017-3×1017cm-3。
The hearth electrode is AuGeNi thin film, and thickness is 300-600 nanometers.
The top electrode is Au thin film, and thickness is 300-600 nanometers.
Described phasmon strengthens the preparation method of GaAs Quito connection solar cell, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxy system in Grown p-
In0.3Ga0.7As thin film, growth temperature is 400-600 DEG C, and growth time is 0.5-2 hours, and gallium source oven temperature degree is 800-1000
DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Zn source oven temperatures degree is 300-800 DEG C；
(1-2) n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The first n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 400-600 DEG C, and growth time is -1 hour 20 minutes, gallium source stove
Temperature is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-
1200℃；
(1-3) preparation of Ag/Al alloy nanoparticles layer：Using electron beam evaporation method in a n-In0.3Ga0.7As is thin
Al/Ag nano-particle is grown on film, growth power is 200-400 watt, and growth time is the 20-200 seconds；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The 2nd n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 400-600 DEG C, and growth time is 1-3 hours, and gallium source oven temperature degree is
800-1000 DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-1200
℃；
(2) preparation of GaAs tunnel junctions：Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N- is grown on As thin film
GaAs thin film, growth temperature is 400-600 DEG C, and growth time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, arsenic
Source oven temperature degree is 200-400 DEG C, and Si source oven temperatures degree is 500-1200 DEG C；
P-GaAs thin film is grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 400-600 DEG C,
Growth time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Zn source oven temperature degree
For 300-800 DEG C；
(3) GaAs pushes up the preparation of battery：
(3-1) preparation of p-GaAs thin film：P-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 300-
600 DEG C, growth time is 1-5 hours, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Zn source oven temperatures
Spend for 300-800 DEG C；
(3-2) preparation of n-GaAs thin film：N-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 300-
600 DEG C, growth time is 5-10 hours, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Si sources stove
Temperature is 500-1200 DEG C；
(4) preparation of hearth electrode：Initially with laser substrate desquamation method by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density is 200-3000mJ/cm2, splitting time is 10-20 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 200-
400 watts, growth time grows hearth electrode for 20-200 minutes；Grow and annealed after hearth electrode, annealing temperature has been 200-400
DEG C, annealing time is 10-60 minutes；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100-300 watt, raw
Long-time is 30-100 minutes；Grow and annealed after top electrode, annealing temperature has been 200-400 DEG C, and annealing time is 10-60
Minute.
Compared with prior art, the present invention has advantages below and beneficial effect：
(1) present invention is by In0.3Ga0.7As inside batteries introduce Al/Ag alloy nanoparticles, using alloying pellet
Scattering section strengthen scattering effect to sunlight, while using Localized field enhancement solar cell strong around nano-particle
Light absorbs, finally realize the high photoelectric transformation efficiency of battery.
(2) present invention strengthens the photoelectric transformation efficiency of iii-v GaAs base solar cell by metal surface phasmon,
Realize the preparation of low-cost high-efficiency GaAs base solar cells.By the In using 1eV0.3Ga0.7As and GaAs builds the binode sun
Battery, can effectively widen the utilization scope to solar spectrum, while band-gap condition and per layer are met between sub- junction battery
With higher crystal mass, the photoelectric efficiency of battery is finally effectively improved.
(3) preparation method of the invention is simply effective, and device preparation technology cost is substantially reduced, cell photoelectric conversion efficiency
Reinforced effects are obvious.
Description of the drawings
Fig. 1 strengthens the structural representation of GaAs Quito connection solar cell for the phasmon of embodiments of the invention.
Fig. 2 shines for the scanning electron microscope that the phasmon of embodiments of the invention strengthens GaAs Quito connection solar cell
Piece.
Fig. 3 is the absorption spectra of the Al/Ag nano-particle of embodiments of the invention.
Fig. 4 strengthens GaAs Quito connection solar cells and is introducing Ag/Al nanometers for the phasmon of embodiments of the invention
Current-voltage relation curve figure before and after grain.
Specific embodiment
With reference to embodiment, the present invention is described in further detail, but embodiments of the present invention not limited to this.
Embodiment 1
As shown in figure 1, the phasmon of the present embodiment strengthens GaAs Quito connection solar cell, include bottom successively from the bottom to top
Electrode 1, In0.3Ga0.7As bottoms battery 2, tunnel junctions 3, GaAs pushes up battery 4 and top electrode 5.
The phasmon of the present embodiment strengthens the preparation method of GaAs Quito connection solar cell, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxy system in Grown p-
In0.3Ga0.7As thin film, growth temperature is 590 DEG C, and growth time is 2 hours, and gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is
285 DEG C, In source oven temperatures degree is 710 DEG C, and Zn source oven temperatures degree is 400 DEG C；
The p-In0.3Ga0.7The thickness of As thin film is 200 nanometers, and doping content is 3 × 1017cm-3；
(1-2) n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The first n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 590 DEG C, and growth time is 1 hour, and gallium source oven temperature degree is 950 DEG C,
Arsenic source oven temperature degree is 285 DEG C, and In source oven temperatures degree is 710 DEG C, and Si source oven temperatures degree is 600 DEG C；
First n-In0.3Ga0.7The thickness of As thin film is 50 nanometers, and doping content is 5 × 1017cm-3；
(1-3) preparation of Ag/Al alloy nanoparticles layer：Using electron beam evaporation method in a n-In0.3Ga0.7As is thin
Al/Ag nano-particle is grown on film, growth power is 300 watts, and growth time is 60 seconds；
Ag/Al nano-metal particles average height in the Ag/Al alloy nanoparticles layer is 15 nanometers, average diameter
For 15 nanometers；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The 2nd n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 590 DEG C, and growth time is 3 hours, and gallium source oven temperature degree is 950 DEG C,
Arsenic source oven temperature degree is 285 DEG C, and In source oven temperatures degree is 710 DEG C, and Si source oven temperatures degree is 600 DEG C；
2nd n-In0.3Ga0.7The thickness of As thin film is 200 nanometers；Doping content is 3 × 1017cm-3；
(2) preparation of GaAs tunnel junctions：The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs successively from the bottom to top
Thin film and p-GaAs thin film, the n-GaAs film thicknesses are 5 nanometers, and doping content is 3 × 1018cm-3；The p-GaAs is thin
The thickness of film is 5 nanometers, and doping content is 3 × 1018cm-3；
Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs thin film is grown on As thin film, growth temperature is
580 DEG C, growth time is 3 minutes, and gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Si source oven temperatures degree is 600 DEG C；
P-GaAs thin film is grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 580 DEG C, growth
Time is 3 minutes, and gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Zn source oven temperatures degree is 600 DEG C；
(3) GaAs pushes up the preparation of battery：
(3-1) preparation of p-GaAs thin film：P-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 580
DEG C, growth time is 3 hours, and gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Zn source oven temperatures degree is 600 DEG C；
The p-GaAs film thicknesses are 500 nanometers, and doping content is 3 × 1018cm-3；
(3-2) preparation of n-GaAs thin film：N-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 580
DEG C, growth time is 8 hours, and gallium source oven temperature degree is 950 DEG C, and arsenic source oven temperature degree is 285 DEG C, and Si source oven temperatures degree is 600 DEG C；
The thickness of the n-GaAs thin film is 3 microns, and doping content is 2 × 1017cm-3；
(4) preparation of hearth electrode：Initially with laser substrate desquamation method by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density is 2000mJ/cm2, splitting time is 15 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 300 watts,
Growth time is 30 minutes growth hearth electrodes；Grow and annealed after hearth electrode, annealing temperature has been 400 DEG C, annealing time has been
10 minutes；The hearth electrode is AuGeNi thin film, and thickness is 200 nanometers；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100 watts, during growth
Between be 30 minutes；Grow and annealed after top electrode, annealing temperature has been 400 DEG C, annealing time has been 10 minutes；The top electrode
For Au thin film, thickness is 300 nanometers.
Fig. 2 is the electron scanning micrograph of the Ag/Al nano-particle of the present embodiment, as can be seen from the figure Al/Ag
The distribution of nano-particle is visibly homogeneous, and the average diameter of granule is about 15 nanometers.Fig. 3 is the absorption spectra of Al/Ag nano-particle, can
To find out that nano-particle has obvious absworption peak, therefore the absorption and scattering for passing through nano-particle in 450-650 nanometer ranges
Effect can significantly improve the optical absorption of solar cell.Can from the solar cell current-voltage relation curve of Fig. 4
Go out, the efficiency of simple GaAs Quito connection solar cell is 28.50%, by the introducing of Ag/Al nano-particle, due to battery
Open-circuit voltage is improved, and fill factor, curve factor is improved, and the photoelectric transformation efficiency of battery brings up to 32.46%.
In of the present invention in GaAs Quito connection solar cell0.3Ga0.7Al/Ag nano-particle is introduced in As junction batteries, by
In the surface plasmons of nano-particle, on the one hand can strengthen the scattering process to incident sunlight, improve too
Propagation distance of the sunlight inside active area is so as to improving light absorbs.Meanwhile, the local surface phasmon of Al/Ag nano-particle
After being excited, strong local electric field can be formed around granule, according to Fermi's Golden-rule, this strong local electric field can be carried
The absorption rate of high battery incident photon, therefore a kind of phasmon prepared by the present invention strengthens GaAs Quito connection solar cell
Photoelectric transformation efficiency is significantly improved.
Embodiment 2
The phasmon of the present embodiment strengthens the preparation method of GaAs Quito connection solar cell, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxy system in Grown p-
In0.3Ga0.7As thin film, growth temperature is 400 DEG C, and growth time is 0.5 hour, and gallium source oven temperature degree is 800 DEG C, arsenic source oven temperature degree
For 200 DEG C, In source oven temperatures degree is 600 DEG C, and Zn source oven temperatures degree is 300 DEG C；
The p-In0.3Ga0.7The thickness of As thin film is 60 nanometers, and doping content is 2 × 1017cm-3；
(1-2) n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The first n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 400 DEG C, and growth time is 20 minutes, and gallium source oven temperature degree is 800
DEG C, arsenic source oven temperature degree is 200 DEG C, and In source oven temperatures degree is 600 DEG C, and Si source oven temperatures degree is 500 DEG C；
First n-In0.3Ga0.7The thickness of As thin film is 20 nanometers, and doping content is 3 × 1017cm-3；
(1-3) preparation of Ag/Al alloy nanoparticles layer：Using electron beam evaporation method in a n-In0.3Ga0.7As is thin
Al/Ag nano-particle is grown on film, growth power is 200 watts, and growth time is 20 seconds；
Ag/Al nano-metal particles average height in the Ag/Al alloy nanoparticles layer is 10 nanometers, average diameter
For 10 nanometers；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The 2nd n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 400 DEG C, and growth time is 1 hour, and gallium source oven temperature degree is 800 DEG C,
Arsenic source oven temperature degree is 200 DEG C, and In source oven temperatures degree is 600 DEG C, and Si source oven temperatures degree is 500 DEG C；
2nd n-In0.3Ga0.7The thickness of As thin film is 200 nanometers；Doping content is 3 × 1017cm-3；
(2) preparation of GaAs tunnel junctions：The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs successively from the bottom to top
Thin film and p-GaAs thin film, the n-GaAs film thicknesses are 3 nanometers, and doping content is 3 × 1018cm-3；The p-GaAs is thin
The thickness of film is 3 nanometers, and doping content is 3 × 1018cm-3；
Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs thin film is grown on As thin film, growth temperature is
400 DEG C, growth time is 2 minutes, and gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Si source oven temperatures degree is 500 DEG C；
P-GaAs thin film is grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 400 DEG C, growth
Time is 2 minutes, and gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Zn source oven temperatures degree is 300 DEG C；
(3) GaAs pushes up the preparation of battery：
(3-1) preparation of p-GaAs thin film：P-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 300
DEG C, growth time is 1 hour, and gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Zn source oven temperatures degree is 300 DEG C；
The p-GaAs film thicknesses are 100-800 nanometers, and doping content is 1.5 × 1017-4×1018cm-3；
(3-2) preparation of n-GaAs thin film：N-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 300
DEG C, growth time is 5 hours, and gallium source oven temperature degree is 800 DEG C, and arsenic source oven temperature degree is 200 DEG C, and Si source oven temperatures degree is 500 DEG C；
The thickness of the n-GaAs thin film is 2 microns, and doping content is 1 × 1017cm-3；
(4) preparation of hearth electrode：Initially with laser substrate desquamation method by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density is 200mJ/cm2, splitting time is 10 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 200 watts,
Growth time is 20 minutes growth hearth electrodes；Grow and annealed after hearth electrode, annealing temperature has been 200 DEG C, annealing time has been
10 minutes；The hearth electrode is AuGeNi thin film, and thickness is 300 nanometers；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100 watts, during growth
Between be 30 minutes；Grow and annealed after top electrode, annealing temperature has been 200 DEG C, annealing time has been 10 minutes；The top electrode
For Au thin film, thickness is 300 nanometers.
The test result that the phasmon of the present embodiment strengthens GaAs Quito connection solar cell is similar to Example 1, here
Repeat no more.
Embodiment 3
The phasmon of the present embodiment strengthens the preparation method of GaAs Quito connection solar cell, comprises the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxy system in Grown p-
In0.3Ga0.7As thin film, growth temperature is 600 DEG C, and growth time is 2 hours, and gallium source oven temperature degree is 1000 DEG C, arsenic source oven temperature degree
For 400 DEG C, In source oven temperatures degree is 800 DEG C, and Zn source oven temperatures degree is 800 DEG C；
The p-In0.3Ga0.7The thickness of As thin film is 600 nanometers, and doping content is 5 × 1017cm-3；
(1-2) n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The first n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 600 DEG C, and growth time is 1 hour, and gallium source oven temperature degree is 1000
DEG C, arsenic source oven temperature degree is 400 DEG C, and In source oven temperatures degree is 800 DEG C, and Si source oven temperatures degree is 1200 DEG C；
First n-In0.3Ga0.7The thickness of As thin film is 80 nanometers, and doping content is 5 × 1017cm-3；
(1-3) preparation of Ag/Al alloy nanoparticles layer：Using electron beam evaporation method in a n-In0.3Ga0.7As is thin
Al/Ag nano-particle is grown on film, growth power is 400 watts, and growth time is 200 seconds；
Ag/Al nano-metal particles average height in the Ag/Al alloy nanoparticles layer is 20 nanometers, average diameter
For 30 nanometers；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7As thin film
The 2nd n-In of upper preparation0.3Ga0.7As thin film, growth temperature is 600 DEG C, and growth time is 3 hours, and gallium source oven temperature degree is 1000
DEG C, arsenic source oven temperature degree is 400 DEG C, and In source oven temperatures degree is 800 DEG C, and Si source oven temperatures degree is 1200 DEG C；
2nd n-In0.3Ga0.7The thickness of As thin film is 250 nanometers；Doping content is 5 × 1017cm-3；
(2) preparation of GaAs tunnel junctions：The tunnel junctions are heavily doped GaAs tunnels knot, include n-GaAs successively from the bottom to top
Thin film and p-GaAs thin film, the n-GaAs film thicknesses are 8 nanometers, and doping content is 5 × 1018cm-3；The p-GaAs is thin
The thickness of film is 8 nanometers, and doping content is 5 × 1018cm-3；
Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs thin film is grown on As thin film, growth temperature is
600 DEG C, growth time is 5 minutes, and gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Si source oven temperatures degree is 1200
℃；
P-GaAs thin film is grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 600 DEG C, growth
Time is 5 minutes, and gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Zn source oven temperatures degree is 800 DEG C；
(3) GaAs pushes up the preparation of battery：
(3-1) preparation of p-GaAs thin film：P-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 600
DEG C, growth time is 5 hours, and gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Zn source oven temperatures degree is 800 DEG C；
The p-GaAs film thicknesses are 800 nanometers, and doping content is 4 × 1018cm-3；
(3-2) preparation of n-GaAs thin film：N-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 600
DEG C, growth time is 10 hours, and gallium source oven temperature degree is 1000 DEG C, and arsenic source oven temperature degree is 400 DEG C, and Si source oven temperatures degree is 1200 DEG C；
The thickness of the n-GaAs thin film is 5 microns, and doping content is 3 × 1017cm-3；
(4) preparation of hearth electrode：Initially with laser substrate desquamation method by In0.3Ga0.7As bottoms battery is carried out with substrate
Peel off, laser energy density is 3000mJ/cm2, splitting time is 20 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 400 watts,
Growth time is 200 minutes growth hearth electrodes；Grow and annealed after hearth electrode, annealing temperature has been 400 DEG C, annealing time has been
60 minutes；The hearth electrode is AuGeNi thin film, and thickness is 600 nanometers；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 300 watts, during growth
Between be 100 minutes；Grow and annealed after top electrode, annealing temperature has been 400 DEG C, annealing time has been 60 minutes；The top electricity
Extremely Au thin film, thickness is 600 nanometers.
The test result that the phasmon of the present embodiment strengthens GaAs Quito connection solar cell is similar to Example 1, here
Repeat no more.
Above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention not by the embodiment
Limit, other any spirit without departing from the present invention and the change, modification, replacement made under principle, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (7)
1. a kind of phasmon strengthens GaAs Quito connection solar cell, it is characterised in that include successively from the bottom to top hearth electrode,
In0.3Ga0.7As bottoms battery, tunnel junctions, GaAs top batteries and top electrode；The In0.3Ga0.7As bottoms battery is wrapped successively from the bottom to top
Include p-In0.3Ga0.7As thin film, a n-In0.3Ga0.7As thin film, Ag/Al alloy nanoparticles layer and the 2nd n-In0.3Ga0.7As
Thin film.
2. phasmon according to claim 1 strengthens GaAs Quito connection solar cell, it is characterised in that the p-
In0.3Ga0.7The thickness of As thin film is 60-600 nanometers, and doping content is 2 × 1017-5×1017cm-3；First n-
In0.3Ga0.7The thickness of As thin film is 20-80 nanometers, and doping content is 2 × 1017～5 × 1017cm-3；The Ag/Al alloys are received
Ag/Al nano-metal particles average height in rice grain layer is 10-20 nanometers, and average diameter is 10-30 nanometers；Described second
n-In0.3Ga0.7The thickness of As thin film is 80-250 nanometers；Doping content is 2 × 1017～5 × 1017cm-3。
3. phasmon according to claim 1 strengthens GaAs Quito connection solar cell, it is characterised in that the tunnel junctions
For heavily doped GaAs tunnels knot, include n-GaAs thin film and p-GaAs thin film successively from the bottom to top, the n-GaAs film thicknesses are
3-8 nanometers, doping content is 1 × 1018～5 × 1018cm-3；The thickness of the p-GaAs thin film is 3-8 nanometers, and doping content is
1×1018～5 × 1018cm-3。
4. phasmon according to claim 1 strengthens GaAs Quito connection solar cell, it is characterised in that the GaAs tops
Battery includes successively from the bottom to top p-GaAs thin film and n-GaAs thin film；The p-GaAs film thicknesses are 100-800 nanometers, are mixed
Miscellaneous concentration is 1.5 × 1017-4×1018cm-3；The thickness of the n-GaAs thin film is 2-5 microns, and doping content is 1 × 1017-3
×1017cm-3。
5. phasmon according to claim 1 strengthens GaAs Quito connection solar cell, it is characterised in that the hearth electrode
For AuGeNi thin film, thickness is 300-600 nanometers.
6. phasmon according to claim 1 strengthens GaAs Quito connection solar cell, it is characterised in that the top electrode
For Au thin film, thickness is 300-600 nanometers.
7. the phasmon described in any one of claim 1～6 strengthens the preparation method of GaAs Quito connection solar cell, its feature
It is to comprise the following steps：
(1)In0.3Ga0.7The preparation of As bottoms battery：
(1-1)p-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxy system in Grown p-In0.3Ga0.7As is thin
Film, growth temperature is 400-600 DEG C, and growth time is 0.5-2 hours, and gallium source oven temperature degree is 800-1000 DEG C, arsenic source oven temperature degree
For 200-400 DEG C, In source oven temperatures degree is 600-800 DEG C, and Zn source oven temperatures degree is 300-800 DEG C；
(1-2) n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7Make on As thin film
A standby n-In0.3Ga0.7As thin film, growth temperature is 400-600 DEG C, and growth time is -1 hour 20 minutes, gallium source oven temperature degree
For 800-1000 DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-1200
℃；
(1-3) preparation of Ag/Al alloy nanoparticles layer：Using electron beam evaporation method in a n-In0.3Ga0.7On As thin film
Growth Al/Ag nano-particle, growth power is 200-400 watt, and growth time is the 20-200 seconds；
(1-4) the 2nd n-In0.3Ga0.7The preparation of As thin film：Using molecular beam epitaxial method in p-In0.3Ga0.7Make on As thin film
Standby 2nd n-In0.3Ga0.7As thin film, growth temperature is 400-600 DEG C, and growth time is 1-3 hours, and gallium source oven temperature degree is 800-
1000 DEG C, arsenic source oven temperature degree is 200-400 DEG C, and In source oven temperatures degree is 600-800 DEG C, and Si source oven temperatures degree is 500-1200 DEG C；
(2) preparation of GaAs tunnel junctions：Using molecular beam epitaxial method in the 2nd n-In0.3Ga0.7N-GaAs is grown on As thin film
Thin film, growth temperature is 400-600 DEG C, and growth time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, arsenic source stove
Temperature is 200-400 DEG C, and Si source oven temperatures degree is 500-1200 DEG C；
P-GaAs thin film is grown in n-GaAs film surfaces using molecular beam epitaxial method, growth temperature is 400-600 DEG C, growth
Time is -5 minutes 2 minutes, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, and Zn source oven temperature degree is
300-800℃；
(3) GaAs pushes up the preparation of battery：
(3-1) preparation of p-GaAs thin film：P-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 300-600
DEG C, growth time is 1-5 hours, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Zn source oven temperature degree
For 300-800 DEG C；
(3-2) preparation of n-GaAs thin film：N-GaAs thin film is grown using molecular beam epitaxy system, growth temperature is 300-600
DEG C, growth time is 5-10 hours, and gallium source oven temperature degree is 800-1000 DEG C, and arsenic source oven temperature degree is 200-400 DEG C, Si source oven temperature degree
For 500-1200 DEG C；
(4) preparation of hearth electrode：Initially with laser substrate desquamation method by In0.3Ga0.7As bottoms battery is peeled off with substrate,
Laser energy density is 200-3000mJ/cm2, splitting time is 10-20 minutes；
Using electron beam evaporation method in In0.3Ga0.7The bottom surface of As bottoms battery prepares hearth electrode, and growth power is 200-400 watt,
Growth time grows hearth electrode for 20-200 minutes；Grow and annealed after hearth electrode, annealing temperature has been 200-400 DEG C, is moved back
The fiery time is 10-60 minutes；
(5) preparation of top electrode：Top electrode is being prepared using electron beam evaporation method, growth power is 100-300 watt, during growth
Between be 30-100 minutes；Grow and annealed after top electrode, annealing temperature has been 200-400 DEG C, and annealing time is 10-60 point
Clock.
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