CN103325878B - A kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof - Google Patents
A kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof.This battery is followed successively by from bottom to top: p-Si substrate and n-Si layer form Si battery; P-InGaN layer, i-InGaN layer and n-InGaN layer form InGaN battery; It is Direct Bonding overlaying structure or by comb metal Intermediate Layer Bonding overlaying structure between Si battery and InGaN battery; N-InGaN layer leads to Cr/Ni/Au metal ohmic contact electrode, leads to Al/Au metal ohmic contact electrode at p-Si substrate back.Method mainly utilizes the absorption region of InGaN and Si material to combine, and obtains wider spectral response range.Because the present invention have employed InGaN film and Si film as light absorbing zone simultaneously, the InGaN absorbing royal purple optical band is combined with the Si absorbing visible and infrared band, light abstraction width can be widened, be conducive to producing more photo-generated carrier, improve effective light absorption, obtain higher Voc simultaneously, and then improve the conversion efficiency of battery.This p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell can be used for solar energy power generating.
Description
Technical field
The invention belongs to semiconductor photovoltaic device field, relate to a kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof, can be used for solar energy power generating, develop new forms of energy.
Background technology
Along with the energy crisis of global range and going from bad to worse of ecological environment problem, as one, ' inexhaustible, nexhaustible clean energy resource more and more attracts widespread attention solar energy.1954 the earliest, first U.S.'s Bell Laboratory succeeded in developing the crystalline silicon pn junction type solar cell in first piece of Practical significance, and is applied to space technology very soon.1973, oil crisis broke out, and from then on, people have generally dropped into more and more many concerns for solar cell.Some developed countries have formulated the preferential policy of a series of inspiration photovoltaic generation, Bing implements huge photovoltaic engineering project, for solar cell industry creates good opportunity to develop and the huge market space, and the solar cell industry entry high-speed developing period.Now, omiting alternative energy source at the U.S., German this, is also one of regenerative resource of following the most applicable mankind's application.
Professor Nanishi of Japan in 2002 utilizes RF-MBE method to grow high-quality InN crystal first, and particularly accurately measuring InN energy gap is 0.7eV, instead of the 1.9eV that previously it is believed that.This new discovery extends application and the advantage of InGaN greatly, the upsurge of worldwide is started InGaN research.
InGaN is direct gap semiconductor material, because of the change of In component, its energy gap is from 3.4eV (GaN) ~ 0.7eV (InN) continuously adjustabe, the absorption spectrum wavelength of its correspondence can extend near infrared light 1.7 μm from ultraviolet light 365nm, almost intactly cover whole solar spectrum, and the processing compatibility growth of different component InGaN film can be realized in same equipment, be applicable to very much the efficient solar battery preparing sandwich construction.
The people such as the Wu of U.S. Lao Lunsi-Berkeley National Laboratory in 2003 propose InGaN to be applied in solar cell first.After this, the research of InGaN solar cell receives much concern all the time.The Georgia Tech, University of California Berkeley, University of California--Santa Barbara, University of Minnesota etc. of the U.S., the international well-known university such as Fukui University, Tokyo University, keio university of Japan, and domestic Xiamen University, Nanjing University and Semiconductor institute, Chinese Academy of Sciences etc. have all carried out a large amount of research work in InGaN solar cell.In recent years, many research institutions reported the Cell Experimentation An of various different structure and component successively, attempted improving battery conversion efficiency.
But, current InGaN material all there is a large amount of core theory and technical problem does not solve, the problems such as such as In is separated, high dislocation density, high concentration of background carriers, make the very difficult acquisition of high-quality high In ingredient InGaN film, the actual light response wave length of InGaN battery still concentrates on royal purple optical band (380 ~ 420nm), a large amount of solar energies is not absorbed, only utilize InGaN material as light absorbing material, be difficult to the solar cell preparing full Spectral matching; On the other hand, the energy gap of Si is about about 1.12eV, prepared cell light response is usually at visible and infrared band, therefore InGaN and Si bi-material is combined, prepare laminated construction battery, can more effectively utilize sunlight irradiation energy, improve the conversion efficiency that battery is total.
Summary of the invention
The object of the invention is to the condition for prior art, propose a kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell and preparation method thereof, utilize the absorption region of InGaN and Si material to combine, obtain wider spectral response range, thus improve the conversion efficiency of battery.
For achieving the above object, the object of the invention is to be realized by following technical proposals.
A kind of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell, comprises Si battery and the InGaN battery of mutual bonding; Described Si battery is made up of p-Si substrate and n-Si layer; Described InGaN battery is made up of p-InGaN layer, i-InGaN layer and n-InGaN layer; Superpose for Direct Bonding between described Si battery and InGaN battery or superposed by comb metal Intermediate Layer Bonding; N-InGaN layer leads to Cr/Ni/Au metal ohmic contact electrode, leads to Al/Au metal ohmic contact electrode at p-Si substrate back.
Further, described p-Si substrate thickness is 100-300 μm, and hole concentration is 1 × 10
17~ 6 × 10
19/ cm
3; Described n-Si layer film thickness is 50-200nm, and electron concentration is 1 × 10
18~ 6 × 10
20/ cm
3.
Further, described p-InGaN layer film thickness is 50 ~ 100nm, In component is 10% ~ 90%, and hole concentration is 1 × 10
17~ 6 × 10
18/ cm
3;
The thickness of described i-InGaN layer is 100 ~ 800nm, In component is 10% ~ 90%, and carrier concentration is 1 × 10
16~ 2 × 10
17/ cm
3;
Described n-InGaN layer film thickness is 50 ~ 100nm, In component is 10% ~ 90%, and electron concentration is 1 × 10
18~ 6 × 10
19/ cm
3.
Further, described Cr/Ni/Au metal ohmic contact electrode adopts grid electrode, and electrode width is 500 ~ 1000nm, and electrode spacing is 500 ~ 3000nm.
Correspondingly, the present invention gives the preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell, and a kind of is adopt the mode of Direct Bonding to carry out lamination to Si battery and InGaN battery, comprises the steps:
1) PECVD method is adopted to prepare Si battery at p-Si Grown n-Si layer;
2) MOCVD method is adopted to grow n-InGaN layer, i-InGaN layer and p-InGaN layer successively on a sapphire substrate, preparation InGaN battery;
3) adopt RIE method, plasma surface clean is carried out to the InGaN battery prepared and Si battery surface;
4) vacuum and low temperature bonding method pre-bonding Si battery and InGaN battery is adopted;
5) adopt temperature to be 200 ~ 300 DEG C and carry out annealing in process;
6) laser-stripping method is adopted to carry out laser lift-off to the Sapphire Substrate of InGaN battery;
7) adopt electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode;
8) adopt electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode.
Further, described surface cleaning adopts RIE method, and carry out plasma surface clean to the InGaN battery prepared and Si battery surface, its power is 100 ~ 400W, and the pressure of reative cell is 1 × 10
-1~ 1 × 10
-3pa, clean 1 ~ 10min; Utilize Ar
+plasma gas processes InGaN battery and Si battery surface.
Another kind of preparation method adopts comb metal intermediate layer to carry out lamination as the mode of intermediate bonding layer to Si battery and InGaN battery:
1) PECVD method is adopted to prepare Si battery at p-Si Grown n-Si layer;
2) MOCVD method is adopted to grow n-InGaN layer, i-InGaN layer and p-InGaN layer successively on a sapphire substrate, preparation InGaN battery;
3) electron beam evaporation method is adopted, in the InGaN battery prepared and Si battery surface evaporation comb metal intermediate layer respectively;
4) adopt vacuum and low temperature bonding method that pre-bonding is carried out in the comb metal intermediate layer of two batteries;
5) adopt temperature to be 200 ~ 300 DEG C and carry out annealing in process;
6) laser-stripping method is adopted to carry out laser lift-off to the Sapphire Substrate of InGaN battery;
7) adopt electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode;
8) adopt electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode.
Further, described comb metal intermediate layer is Ti/Au and Ni/Au alloy, and described Ti/Au alloy is 40nm/200nm at Si battery surface thickness, and described Ni/Au alloy is 40nm/200nm at InGaN battery surface thickness.
In two kinds of preparation methods, when described employing vacuum and low temperature bonding method pre-bonding Si battery and InGaN battery, vacuum degree is 1 × 10
-1~ 1 × 10
-2pa, bonding temperature is 100 ~ 200 DEG C.
In two kinds of preparation methods, described laser-stripping method comprises the steps:
1) adopt KrF excimer laser as LASER Light Source, pulse frequency is 1 ~ 20Hz, and single pulse energy is 50 ~ 200mJ;
2) laser beam is respectively by convex lens and concavees lens, is focused into the square hot spot being of a size of 2mm × 2mm;
3) the InGaN/Si binode laminated cell after bonding is fixed in electric rotating platform, regulates rotation platform leg speed to be 1.5mm/s;
4) laser facula is from InGaN/Si binode laminated cell edge, adopt the step-by-step system heart scanning wherein of helix, namely, rotation platform temporarily stops according to after setting speed 1.5mm/s rotating 360 degrees, then the center of circle of rotation platform radially moves horizontally 1.5mm in side, rotation platform is rotated further afterwards, until laser facula arrives the center of circle of rotation platform; Irradiate 100 ~ 200 DEG C of heating InGaN/Si binode laminated cells with infrared lamp simultaneously;
5) after laser scanning complete InGaN/Si binode laminated cell, Sapphire Substrate comes off, with the HCl:H of 1:1
2o acid soak InGaN/Si binode laminated cell, the metal Ga of removing InGaN battery bottom surface.
Tool of the present invention has the following advantages:
(1) surface treatment of InGaN/GaN based material and silicon materials Direct Bonding is adopted
Have employed chip direct bonding method smooth for two panels, by surface cleaning and process, wafer smooth for two panels is directly contacted, be bonded together in advance by the van der waals force on surface, under certain pressure action, the surface energy of bonding is made to reach the intensity of covalent bond by high-temperature heat treatment.
The evenness of wafer surface, roughness, lattice surface arrange and chemically adsorbed state affects the successful primary factor of direct wafer bonding.Because the lattice mismatch of InGaN/GaN based material and Si is comparatively large, therefore directly bonding chip time, the combination between dangling bonds is not very well, and be not easy to form complete covalent bond grid, bond strength is too little, and characteristic electron is poor, is not easy to the carrying out of technique after device.
Therefore, the present invention, before direct bonding chip, adopts RIE method, uses Ar
+plasma effects on surface carries out cleaning and processing, thus reaches the effect of InGaN/GaN based material and silicon materials Direct Bonding.
(2) bonding of metal intermediate layer intervention
The effect of metal intermediate layer is the bonding in order to complete under lower annealing temperature between the larger interface of material character difference.Because metal has good ductility, the release of the thermal stress of bonded crystals can be suppressed.The effect of metal level not still by two bonding chips to together, but also can as reflector to improve the light release efficiency of device.
Therefore, the present invention is before bonding bonding, first adopt electron beam evaporation method, at two battery surfaces metal that evaporation fusing point is lower respectively, as Au/Ni or Au/Ti alloy, the metal utilizing fusing point lower has good ductility, can suppress the release of the thermal stress of bonded crystals, thus the bonding completed under lower annealing temperature between the larger material of nature difference, reduce high temperature to the impact of battery performance.
Accompanying drawing explanation
Fig. 1 is the first exemplary construction schematic diagram of solar cell of the present invention;
Fig. 2 is the second exemplary construction schematic diagram of solar cell of the present invention;
Fig. 3 is the process chart that the present invention makes solar cell (the first example), wherein:
Fig. 3 (a) is p-Si substrate layer schematic diagram;
Fig. 3 (b) is at p-Si substrate layer growth n-Si layer schematic diagram;
Fig. 3 (c) grows n-InGaN layer schematic diagram on a sapphire substrate;
Fig. 3 (d) grows i-InGaN layer schematic diagram on n-InGaN layer;
Fig. 3 (e) grows p-InGaN layer schematic diagram on i-InGaN layer;
Direct Bonding is carried out in the surface of p-i-n type InGaN battery and p-n junction Si battery by Fig. 3 (f);
Fig. 3 (g) peels off Sapphire Substrate;
Fig. 3 (h) n-InGaN layer deposits Ni/Au Ohmic electrode schematic diagram;
Fig. 3 (i) is at p-Si substrate back depositing Al/Au Ohmic electrode schematic diagram.
Fig. 4 is the process chart that the present invention makes solar cell (the second example), wherein:
Fig. 4 (a) is p-Si substrate layer schematic diagram;
Fig. 4 (b) is at p-Si substrate layer growth n-Si layer schematic diagram;
Fig. 4 (c) grows n-InGaN layer schematic diagram on a sapphire substrate;
Fig. 4 (d) grows i-InGaN layer schematic diagram on n-InGaN layer;
Fig. 4 (e) grows p-InGaN layer schematic diagram on i-InGaN layer;
Fig. 4 (f) is at Si battery surface evaporation Ti/Au electrode;
Fig. 4 (g) is at InGaN battery surface evaporation Ni/Au electrode;
Fig. 4 (h) is by the metal level bonding on the surface of p-i-n type InGaN battery and p-n junction Si battery;
Fig. 4 (i) peels off Sapphire Substrate;
Fig. 4 (j) n-InGaN layer deposits Ni/Au Ohmic electrode schematic diagram;
Fig. 4 (k) is at p-Si substrate back depositing Al/Au Ohmic electrode schematic diagram;
Fig. 5 is the laser lift-off schematic diagram of InGaN battery Sapphire Substrate.
Embodiment
Below by specific embodiment, concrete structure of the present invention and preparation method are described in further details.
With reference to shown in Fig. 1, Fig. 2, this p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell of the present invention, comprise Si battery and the InGaN battery of mutual bonding, Si battery is made up of p-Si substrate and n-Si layer 11; InGaN battery is made up of p-InGaN layer 12, i-InGaN layer 13 and n-InGaN layer 14; For Direct Bonding superposition (see Fig. 1) or by comb metal intermediate layer 17 bonding superposition (see Fig. 2) between Si battery and InGaN battery; N-InGaN layer 14 leads to Cr/Ni/Au metal ohmic contact electrode 15, leads to Al/Au metal ohmic contact electrode 16 at p-Si substrate back.Wherein, p-Si substrate thickness is 100-300 μm, and hole concentration is 1 × 10
17~ 6 × 10
19/ cm
3; N-Si layer film thickness is 50-200nm; N-Si layer 11 film thickness is 50-200nm, and electron concentration is 1 × 10
18~ 6 × 10
20/ cm
3.P-InGaN layer 12 film thickness is 50 ~ 100nm, In component is 10% ~ 90%, and hole concentration is 1 × 10
17~ 6 × 10
18/ cm
3; The thickness of i-InGaN layer 13 is 100 ~ 800nm, In component is 10% ~ 90%, and carrier concentration is 1 × 10
16~ 2 × 10
17/ cm
3; N-InGaN layer 14 film thickness is 50 ~ 100nm, In component is 10% ~ 90%, and electron concentration is 1 × 10
18~ 6 × 10
19/ cm
3.Metal ohmic contact electrode 15 adopts grid electrode, and electrode width is 500 ~ 1000nm, and electrode spacing is 500 ~ 3000nm.
The preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell of the present invention comprises two kinds of different modes:
One, the mode of Direct Bonding is adopted to carry out lamination to Si battery and InGaN battery:
1) traditional PECVD method is adopted to prepare p-n junction Si battery, at p-Si substrate layer (see Fig. 3 (a)) growth n-Si layer (see Fig. 3 (b));
2) adopt traditional MOCVD method to prepare p-i-n type InGaN battery, grow n-InGaN layer (see Fig. 3 (c)) on a sapphire substrate successively, n-InGaN layer grows i-InGaN layer (see Fig. 3 (d)), on i-InGaN layer, grow p-InGaN layer (see Fig. 3 (e));
3) adopt RIE method, utilize Ar
+plasma gas processes the InGaN battery prepared and Si battery surface; The power adopted is 100 ~ 400W; The pressure of reative cell is 1 × 10
-1~ 1 × 10
-3pa; Time is 1 ~ 10min;
4) adopt vacuum and low temperature bonding method, directly being contacted with the p-InGaN layer surface of InGaN battery on the n-Si layer of the Si battery prepared respectively surface, is 1 × 10 in vacuum degree
-1~ 1 × 10
-2pa, temperature is 100 ~ 200 DEG C and carries out pre-bonding (see Fig. 3 (f));
5) annealing in process, temperature is 200 ~ 300 DEG C, makes the surface energy of bonding reach the intensity of covalent bond;
6) laser-stripping method is adopted to carry out laser lift-off (see Fig. 5) to the Sapphire Substrate of InGaN battery;
A) adopt KrF excimer laser as LASER Light Source, pulse frequency is 1 ~ 20Hz, and single pulse energy is 50 ~ 200mJ;
B) laser beam is respectively by convex lens and concavees lens, is focused into the square hot spot being of a size of 2mm × 2mm;
C) the InGaN/Si binode laminated cell after bonding is fixed in electric rotating platform, regulates rotation platform leg speed to be 1.5mm/s;
D) laser facula is from InGaN/Si binode laminated cell edge, adopt the step-by-step system heart scanning wherein of helix, namely, rotation platform temporarily stops according to after setting speed 1.5mm/s rotating 360 degrees, then the center of circle of rotation platform radially moves horizontally 1.5mm in side, rotation platform is rotated further afterwards, until laser facula arrives the center of circle of rotation platform; Irradiate 100 ~ 200 DEG C of heating InGaN/Si binode laminated cells with infrared lamp simultaneously;
E) after laser scanning complete InGaN/Si binode laminated cell, Sapphire Substrate comes off (see Fig. 3 (g)), with the HCl:H of 1:1
2o solution soaks InGaN/Si binode laminated cell, the metal Ga of removing InGaN battery bottom surface;
7) adopt traditional electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode (see Fig. 3 (h));
8) adopt traditional electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode (see Fig. 3 (i)).
Two, the mode of pectination bonding metal layer bonding is adopted to carry out lamination to Si battery and InGaN battery:
1) traditional PECVD method is adopted to prepare p-n junction Si battery, at p-Si substrate layer (see Fig. 4 (a)) growth n-Si layer (see Fig. 4 (b));
2) adopt traditional MOCVD method to prepare p-i-n type InGaN battery, grow n-InGaN layer (see Fig. 4 (c)) on a sapphire substrate successively, n-InGaN layer grows i-InGaN layer (see Fig. 4 (d)), on i-InGaN layer, grow p-InGaN layer (see Fig. 4 (e));
3) electron beam evaporation method is adopted, on the n-Si layer surface of the Si battery prepared and the p-InGaN layer surface of InGaN battery, evaporation comb metal intermediate layer Ti/Au electrode and Ni/Au electrode (see Fig. 4 (f) Fig. 4 (g)) respectively;
4) adopt vacuum and low temperature bonding method to be contacted with the comb metal intermediate layer of InGaN battery surface by Si battery, and be 1 × 10 in vacuum degree
-1~ 1 × 10
-2pa, bonding temperature is 100 ~ 200 DEG C and carries out pre-bonding (see Fig. 4 (h));
5) annealing in process, temperature is 200 ~ 300 DEG C, makes the surface energy of bonding reach the intensity of covalent bond;
6) laser-stripping method is adopted to carry out laser lift-off (see Fig. 5) to the Sapphire Substrate of InGaN battery;
A) adopt KrF excimer laser as LASER Light Source, pulse frequency is 1 ~ 20Hz, and single pulse energy is 50 ~ 200mJ;
B) laser beam is respectively by convex lens and concavees lens, is focused into the square hot spot being of a size of 2mm × 2mm;
C) the InGaN/Si binode laminated cell after bonding is fixed in electric rotating platform, regulates rotation platform leg speed to be 1.5mm/s;
D) laser facula is from sample edge, adopt the step-by-step system of helix to sample centre scan, namely, rotation platform temporarily stops according to after setting speed 1.5mm/s rotating 360 degrees, then the center of circle of rotation platform radially moves horizontally 1.5mm in side, rotation platform is rotated further afterwards, until laser facula arrives the center of circle of rotation platform; Irradiate 100 ~ 200 DEG C of heated sample with infrared lamp simultaneously;
E) after the complete sample of laser scanning, Sapphire Substrate comes off (see Fig. 4 (i)), with the HCl:H of 1:1
2o solution soaks sample, the metal Ga of removing InGaN battery bottom surface.
7) adopt electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode (see Fig. 4 (j));
8) adopt electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode (see Fig. 4 (k)).
Finally bright, the foregoing is only the preferred embodiments of the present invention, be not limited to the present invention.For a person skilled in the art, under the premise without departing from the principles of the invention, some improvement, retouching or equivalent replacement can also be made.So these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. a preparation method for p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell, is characterized in that, comprise the steps:
The mode of Direct Bonding is adopted to carry out lamination to Si battery and InGaN battery:
1) PECVD method is adopted to prepare Si battery at p-Si Grown n-Si layer (11);
2) MOCVD method is adopted to grow n-InGaN layer (14), i-InGaN layer (13) and p-InGaN layer (12) successively on a sapphire substrate, preparation InGaN battery;
3) adopt RIE method, plasma surface clean is carried out to the InGaN battery prepared and Si battery surface;
4) vacuum and low temperature bonding method pre-bonding Si battery and InGaN battery is adopted;
5) adopt temperature to be 200 ~ 300 DEG C and carry out annealing in process;
6) laser-stripping method is adopted to carry out laser lift-off to the Sapphire Substrate of InGaN battery;
7) adopt electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode;
8) adopt electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode;
Described employing RIE method, carries out plasma surface clean to the InGaN battery prepared and Si battery surface, utilizes Ar
+plasma gas processes InGaN battery and Si battery surface; Its power is 100 ~ 400W, and the pressure of reative cell is 1 × 10
-1~ 1 × 10
-3pa, the clean time is 1 ~ 10min;
Described laser-stripping method comprises the steps:
1) adopt KrF excimer laser as LASER Light Source, pulse frequency is 1 ~ 20Hz, and single pulse energy is 50 ~ 200mJ;
2) laser beam is respectively by convex lens and concavees lens, is focused into the square hot spot being of a size of 2mm × 2mm;
3) the InGaN/Si binode laminated cell after bonding is fixed in electric rotating platform, regulates rotation platform leg speed to be 1.5mm/s;
4) laser facula is from InGaN/Si binode laminated cell edge, adopt the step-by-step system heart scanning wherein of helix, namely, rotation platform temporarily stops according to after setting speed 1.5mm/s rotating 360 degrees, then the center of circle of rotation platform radially moves horizontally 1.5mm in side, rotation platform is rotated further afterwards, until laser facula arrives the center of circle of rotation platform; Irradiate 100 ~ 200 DEG C of heating InGaN/Si binode laminated cells with infrared lamp simultaneously;
5) after laser scanning complete InGaN/Si binode laminated cell, Sapphire Substrate comes off, with the HCl:H of 1:1
2o acid soak InGaN/Si binode laminated cell, the metal Ga of removing InGaN battery bottom surface.
2. a preparation method for p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell, is characterized in that, adopts comb metal intermediate layer (17) to carry out lamination as the mode of intermediate bonding layer to Si battery and InGaN battery:
1) PECVD method is adopted to prepare Si battery at p-Si Grown n-Si layer (11);
2) MOCVD method is adopted to grow n-InGaN layer (14), i-InGaN layer (13) and p-InGaN layer (12) successively on a sapphire substrate, preparation InGaN battery;
3) electron beam evaporation method is adopted, in the InGaN battery prepared and Si battery surface evaporation comb metal intermediate layer respectively;
4) adopt vacuum and low temperature bonding method that pre-bonding is carried out in the comb metal intermediate layer (17) of two batteries;
5) adopt temperature to be 200 ~ 300 DEG C and carry out annealing in process;
6) laser-stripping method is adopted to carry out laser lift-off to the Sapphire Substrate of InGaN battery;
7) adopt electron beam evaporation methods at n-InGaN surface evaporation Ni/Au Ohm contact electrode;
8) adopt electron beam evaporation methods at p-Si substrate back evaporating Al/Au Ohm contact electrode;
Described laser-stripping method comprises the steps:
1) adopt KrF excimer laser as LASER Light Source, pulse frequency is 1 ~ 20Hz, and single pulse energy is 50 ~ 200mJ;
2) laser beam is respectively by convex lens and concavees lens, is focused into the square hot spot being of a size of 2mm × 2mm;
3) the InGaN/Si binode laminated cell after bonding is fixed in electric rotating platform, regulates rotation platform leg speed to be 1.5mm/s;
4) laser facula is from InGaN/Si binode laminated cell edge, adopt the step-by-step system heart scanning wherein of helix, namely, rotation platform temporarily stops according to after setting speed 1.5mm/s rotating 360 degrees, then the center of circle of rotation platform radially moves horizontally 1.5mm in side, rotation platform is rotated further afterwards, until laser facula arrives the center of circle of rotation platform; Irradiate 100 ~ 200 DEG C of heating InGaN/Si binode laminated cells with infrared lamp simultaneously;
5) after laser scanning complete InGaN/Si binode laminated cell, Sapphire Substrate comes off, with the HCl:H of 1:1
2o acid soak InGaN/Si binode laminated cell, the metal Ga of removing InGaN battery bottom surface.
3. the preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 2, it is characterized in that, (17) one, described comb metal intermediate layer is Ti/Au alloy, another is Ni/Au alloy, described Ti/Au alloy is 40nm/200nm at Si battery surface thickness, and described Ni/Au alloy is 40nm/200nm at InGaN battery surface thickness.
4. the preparation method of p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 1 or 2, it is characterized in that, described employing vacuum and low temperature bonding method pre-bonding Si battery and InGaN battery, vacuum degree is 1 × 10
-1~ 1 × 10
-2pa, bonding temperature is 100 ~ 200 DEG C.
5., based on a p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell prepared by method described in claim 1, described Si battery is made up of p-Si substrate and n-Si layer (11); Described InGaN battery is made up of p-InGaN layer (12), i-InGaN layer (13) and n-InGaN layer (14); It is Direct Bonding overlaying structure or by comb metal intermediate layer (17) bonding overlaying structure between described Si battery and InGaN battery; N-InGaN layer (14) leads to Ni/Au metal ohmic contact electrode (15); Al/Au metal ohmic contact electrode (16) is led at p-Si substrate back;
Described p-Si substrate thickness is 100-300 μm, and hole concentration is 1 × 10
17~ 6 × 10
19/ cm
3; Described n-Si layer (11) film thickness is 50-200nm, and electron concentration is 1 × 10
18~ 6 × 10
20/ cm
3;
Described p-InGaN layer (12) film thickness is 50 ~ 100nm, In component is 10% ~ 90%, and hole concentration is 1 × 10
17~ 6 × 10
18/ cm
3;
The thickness of described i-InGaN layer (13) is 100 ~ 800nm, In component is 10% ~ 90%, and carrier concentration is 1 × 10
16~ 2 × 10
17/ cm
3;
Described n-InGaN layer (14) film thickness is 50 ~ 100nm, In component is 10% ~ 90%, and electron concentration is 1 × 10
18~ 6 × 10
19/ cm
3.
6. p-i-n type InGaN/p-n type Si binode stacked solar cell, cascade solar cell as claimed in claim 5, it is characterized in that, described Ni/Au metal ohmic contact electrode (15) adopts grid electrode, and electrode width is 500 ~ 1000nm, and electrode spacing is 500 ~ 3000nm.
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| CN102254965A (en) * | 2011-07-21 | 2011-11-23 | 天津理工大学 | N-p-substrate type photovoltaic device with InGaN multi-layer thin film structure and preparation thereof |
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| CN102254965A (en) * | 2011-07-21 | 2011-11-23 | 天津理工大学 | N-p-substrate type photovoltaic device with InGaN multi-layer thin film structure and preparation thereof |
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