CN117894881B - Method for adjusting hole concentration of CIGS film or solar cell by utilizing multi-target sputtering - Google Patents
Method for adjusting hole concentration of CIGS film or solar cell by utilizing multi-target sputtering Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000013077 target material Substances 0.000 claims abstract description 26
- 239000010949 copper Substances 0.000 claims abstract description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 34
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 22
- 239000011261 inert gas Substances 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 239000005361 soda-lime glass Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 22
- 239000011669 selenium Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000010549 co-Evaporation Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
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- 238000009776 industrial production Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
A method for adjusting hole concentration of a CIGS film or a solar cell by utilizing multi-target sputtering belongs to the technical field of film solar cells. The invention produces high-energy Ar plasma by ionizing argon, bombards the CIGS target, prepares the CIGS film on the prepared substrate, and realizes the controllable adjustment of the hollow concentration in the CIGS by adjusting the copper content in the CIGS target. The CIGS film prepared by the magnetron sputtering method has uniform components and smooth surface, and the integral hole concentration of the absorption layer is regulated due to different copper contents in the target materials, so that the open-circuit voltage and the filling factor of the CIGS battery are further improved, the performance parameters of the battery are effectively improved, and the photoelectric conversion efficiency of the battery is improved to a greater extent.
Description
Technical Field
The invention belongs to the technical field of new energy, and particularly relates to a CIGS thin film or a solar cell manufactured by a metal deposition method of a printed circuit.
Background
As a second generation solar cell, CIGS thin film solar cells have high efficiency, low cost, and diverse substrates, with great commercial potential. Scientists prepare the CIGS absorbing layer by using a three-step co-evaporation method of elements such as copper, indium, gallium, selenium and the like, and can well control sample components. However, the preparation of a large-scale uniform production line evaporation source is difficult, meanwhile, the precise control of evaporation rates of four different elements also needs to be performed with high control precision, and the problems are that the preparation of the CIGS battery by using an evaporation method in a large area is difficult. In addition, the gaseous Se has extremely strong corrosiveness to stainless steel, a large amount of residues can be formed in the cavity of the equipment after long-time use of Se, fe-Se binary compounds can be formed on the inner wall of the cavity, and the Fe-Se binary compounds can peel off and possibly fall on the surface of a film in the use process of the equipment, so that the sample has certain pollution, and the quality of the film is reduced. Thus, the use of Se vapor also makes continuous production for long periods of time difficult when CIGS cells are produced using a co-evaporation process. The cost of the sputtering selenizing method of the alloy prefabricated target is lower than that of the co-evaporation method, and the large-area uniformity of the alloy prefabricated film prepared by sputtering is good, so that the method is very suitable for industrial production. Therefore, the selenization method after sputtering the alloy prefabricated film is also a widely adopted process method for industrial production at present.
The invention provides a method for adjusting the hole concentration of a CIGS solar cell by utilizing multi-target sputtering. The high-energy Ar plasma is generated by ionizing argon to bombard the CIGS target, the CIGS film is prepared on a pre-prepared substrate, and the controllable adjustment of the hollow concentration in the CIGS is realized by adjusting the copper content in different CIGS targets. The quality of the main absorption layer of the CIGS solar cell is critical to the effect of the whole device, and the quality of the thin film of the layer directly determines the efficiency of the cell. The CIGS film prepared by the magnetron sputtering method has uniform components and smooth surface, and the concentration of the whole holes of the absorption layer is regulated due to different contents of copper in the target materials, so that a concentration gradient is formed, the CIGS film is better adapted to the power generation environment of the solar cell, the open-circuit voltage and the filling factor of the CIGS cell are further improved, the performance parameters of the cell are effectively improved, the photoelectric conversion efficiency of the cell is improved to a greater extent, and the experimental scheme is proved to be feasible.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to devise a method for adjusting the hole concentration of CIGS solar cells using multi-target sputtering. The invention produces high-energy Ar plasma by ionizing argon, bombards the CIGS target, prepares the CIGS film on the prepared substrate, and realizes the controllable adjustment of the hollow concentration in the CIGS by adjusting the copper content in a plurality of CIGS targets.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
in one aspect, the invention provides a method for adjusting the hole concentration of a CIGS thin film by utilizing multi-target sputtering, comprising the following steps:
(1) Cleaning the surface of the substrate to remove contaminants and dust from the surface. After cleaning, the substrate is subjected to liquid sealing by deionized water to avoid pollution, the substrate is taken, a Mo film is deposited on the substrate by adopting a direct current sputtering method and is used as an impurity element barrier layer and a back electrode, and better contact between the Mo layer and the substrate is realized;
(2) Placing the sample on a sample rack, sending the sample into a high vacuum cavity, and heating the sample;
(3) Filling inert gas into the cavity, starting an intermediate frequency power supply to generate an external electric field, enabling argon atoms to ionize to generate Ar positive ions and new electrons to bombard the surface of the target with high energy, and taking a first target material to perform pre-sputtering; after the glow discharge is determined to occur, maintaining for 10 minutes, cleaning the surface of the target material and enabling a power supply to stably operate;
(4) Starting a sample frame transmission device, adjusting the sample running speed, ensuring that the sample moves on the surface of the target material at a uniform speed, and growing to obtain a uniform first CIGS prefabricated layer;
(5) Taking a second target material, and performing first sputtering treatment to obtain a CIGS intermediate layer;
(6) Taking a third target material, and performing secondary sputtering treatment to obtain a CIGS surface film;
(7) Taking out the CIGS film subjected to surface modification treatment after sputtering, and packaging;
the components of the first target, the second target and the third target are different;
the power used for the pre-sputtering, the first sputtering and the second sputtering is different.
The substrate in the step (1) is soda lime glass or a flexible substrate;
the conditions of the heating treatment in the step (2) are as follows: the temperature is 130-150 ℃ and the heat preservation time is 30-35min.
In the method, the flexible substrate is a titanium foil or a stainless steel foil.
In the method, in the step (3), the inert gas is argon; the conditions of the pre-sputtering are as follows: the flow rate of the inert gas is 190-210sccm, and the pre-sputtering power is 150-160W.
In the method, the first target material in the step (4) comprises 25% of Cu, 17.5% of In, 7.5% of Ga7.5% of Se and 50%;
the growth conditions are as follows: the air flow of the introduced inert gas is 200sccm, and the air pressure in the growth chamber is 0.1Pa;
The sample running speed is 0.1-0.15m/s, and the sample passes through the surface of the target material for 6-8 times.
In the method, the components of the second target In the step (5) comprise Cu20%, in20%, ga10% and Se50%;
The conditions of the first sputtering are as follows: the flow rate of inert gas is 200sccm, the voltage loaded on the intermediate frequency power supply is 200V-300V, the power is set to be 200W, and the working pressure is 0.3Pa.
In the method, the components of the third target in the step (6) comprise Cu22.5%, in17.5%, ga7.5% and S52.5%;
The conditions of the second sputtering are as follows: the flow rate of inert gas is 100sccm, the voltage applied to the intermediate frequency power supply is 150V-200V, the set power is 300W, and the working pressure is 0.1Pa.
In a second aspect, the invention provides a CIGS thin film having a copper concentration gradient, prepared by any of the methods described herein.
In a third aspect, the invention provides a method for adjusting hole concentration of a CIGS solar cell by utilizing multi-target sputtering, wherein a CIGS film subjected to surface modification treatment is obtained by any one of the methods, cadmium sulfide CdS, intrinsic zinc oxide I-ZnO and aluminum-doped zinc oxide AZO films are sequentially prepared on the surface of the CIGS film, and then a grid is prepared by utilizing electron beam evaporation, so that the CIGS solar cell is obtained.
In a fourth aspect, the invention provides a CIGS solar cell with high open circuit voltage and fill factor, prepared by the method.
Compared with the prior art, the invention has the following beneficial effects:
According to the invention, the gradient regulation and control of the copper content in the CIGS are realized by regulating the copper content in a plurality of CIGS targets, and the magnetron sputtering method ensures that the CIGS film has uniform components and smooth surface. Due to the fact that the copper content of the used targets is different, the overall hole concentration of the absorption layer is adjusted, a concentration gradient is formed, the absorption layer is better adapted to the power generation environment of the solar cell, the open-circuit voltage and the filling factor of the CIGS cell are further improved, the performance parameters of the cell are effectively improved, and the photoelectric conversion efficiency of the cell is improved to a greater extent.
Drawings
FIG. 1 is a flow chart of a process for adjusting the hole concentration of a CIGS solar cell using multi-target sputtering in accordance with the present invention;
fig. 2 is a schematic diagram of an apparatus for adjusting hole concentration of CIGS solar cells using multi-target sputtering according to the present invention;
fig. 3 is a comparison of device performance parameters of a conventional vacuum evaporation device and a CIGS solar cell using multi-target sputtering to adjust hole concentration in the present invention.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects solved by the invention more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1:
FIG. 1 is a flow chart of a process for adjusting the hole concentration of a CIGS solar cell by multi-target sputtering according to the present invention; fig. 2 is a schematic diagram of an apparatus for adjusting hole concentration of CIGS solar cells using multi-target sputtering according to the present invention.
1. The surface of the substrate is cleaned by a cleaner for 4 times, each time for 80 minutes, the direction of the substrate is changed between each cleaning, and the pollutants and dust on the surface are removed. And after cleaning, the substrate is sealed with deionized water to avoid pollution.
2. A Mo metal film is deposited on a substrate by using direct current radio frequency magnetron sputtering to serve as an impurity element barrier layer and a back electrode, and better contact between the Mo layer and the substrate is realized.
3. Placing the substrate on a sample frame, sending the substrate into a medium-frequency magnetron sputtering cavity, heating the cavity to 130 ℃, preserving heat for 30 minutes, and evaporating water vapor on the surface of the sample; and (3) feeding inert gas into the cavity, starting an intermediate frequency power supply to generate an external electric field, enabling argon atoms to ionize to generate Ar positive ions and new electrons to bombard the surface of the target with high energy, performing pre-sputtering on the target, and removing impurities on the surface of the target, wherein the flow of the used argon is 190sccm, and the sputtering power is 150w.
4. After the power of the target material is stable, starting a sample frame transmission device, wherein the flow of Ar gas introduced in the growth process is 200sccm, the pressure in the growth chamber is controlled to be about 0.3Pa, and the used target material comprises the following components: 25% of Cu, 17.5% of In, 7.5% of Ga and 50% of Se; the running speed of the sample rack is set to be 0.1m/s, and the sample rack needs to pass through the surface of the target material 6 times. Ensuring that the sample moves at a suitable speed over the target surface to obtain a uniform high quality film.
5. After the sputtering of the first CIGS prefabricated layer is finished, the target materials are replaced by CIGS targets of which the Cu is 20%, the In is 20%, the Ga is 10%, and the Se is 50%, ar gas flow is 200sccm, the voltage loaded on an intermediate frequency power supply is 200-300V, the power is set to be 200W, and the sputtering of the intermediate layer CIGS is carried out.
6. After the sputtering of the CIGS intermediate layer is completed, the CIGS target with the target materials of 22.5 percent of Cu, 17.5 percent of n, 7.5 percent of Ga and 52.5 percent of Se is replaced, the Ar gas flow is 100sccm, the voltage loaded on the intermediate frequency power supply is 150-200V, the power is set to be 300W, and the surface CIGS film is sputtered.
7. After the CIGS sputtering is completed, cdS is prepared as a buffer layer and a P-N junction forming layer on the surface of the CIGS thin film. CdSO 4 is used as a cadmium source, thiourea is used as a sulfur precursor, NH 3·H2 is used as a buffer solution, a water bath method is used for preparing a CdS film on the surface of the CIGS film, and annealing is carried out at 160 ℃ after the reaction is finished.
8. And preparing cadmium sulfide CdS, intrinsic zinc oxide I-ZnO and aluminum doped zinc oxide AZO films on the surface in sequence by utilizing a magnetron sputtering method, wherein the reaction gases used by the I-ZnO are Ar and O 2, the Ar flow is 200sccm, the O 2 flow is 2sccm, the initial sputtering power is 120W, and the initial sputtering power is increased to 220W later. The reaction gases used by AZO are Ar and H 2, the Ar flow is 200sccm, the H 2 flow is 2sccm, the temperature is required to be kept at 160 ℃ for 15min, and the sputtering power is 750W.
9. The grid electrode is prepared by an electron beam evaporation method. The target materials are Ni and Al, wherein the thickness of the Ni layer is 1500A, the thickness of the Al layer is 100000A, and the grid electrode is obtained, so that the preparation process of the CIGS solar cell is completed.
Example 2:
1. The surface of the substrate is cleaned by a cleaner for 4 times, each time for 80 minutes, the direction of the substrate is changed between each cleaning, and the pollutants and dust on the surface are removed. And after cleaning, the substrate is sealed with deionized water to avoid pollution.
2. A Mo metal film is deposited on a substrate by using direct current radio frequency magnetron sputtering to serve as an impurity element barrier layer and a back electrode, and better contact between the Mo layer and the substrate is realized.
3. Placing the substrate on a sample frame, sending the substrate into a medium-frequency magnetron sputtering cavity, heating the cavity to 150 ℃, preserving heat for 35 minutes, and evaporating water vapor on the surface of the sample; and (3) feeding inert gas into the cavity, starting an intermediate frequency power supply to generate an external electric field, enabling argon atoms to ionize to generate Ar positive ions and new electrons to bombard the surface of the target with high energy, performing pre-sputtering on the target, and removing impurities on the surface of the target, wherein the flow rate of the argon is 210sccm, and the sputtering power is 160w.
4. After the power of the target material is stable, starting a sample frame transmission device, wherein the flow of Ar gas introduced in the growth process is 200sccm, the pressure in the growth chamber is controlled to be about 0.3Pa, and the used target material comprises the following components: 25% of Cu, 17.5% of In, 7.5% of Ga and 50% of Se; the running speed of the sample rack is set to be 0.15m/s, and the sample rack needs to pass through the surface of the target material 8 times. Ensuring that the sample moves at a suitable speed over the target surface to obtain a uniform high quality film.
5. After the sputtering of the first CIGS prefabricated layer is finished, the target materials are replaced by CIGS targets of which the Cu is 20%, the In is 20%, the Ga is 10%, and the Se is 50%, ar gas flow is 200sccm, the voltage loaded on an intermediate frequency power supply is 200-300V, the power is set to be 200W, and the sputtering of the intermediate layer CIGS is carried out.
6. After the sputtering of the CIGS intermediate layer is completed, the CIGS target with the target materials of 22.5 percent of Cu, 17.5 percent of n, 7.5 percent of Ga and 52.5 percent of Se is replaced, the Ar gas flow is 100sccm, the voltage loaded on the intermediate frequency power supply is 150-200V, the power is set to be 300W, and the surface CIGS film is sputtered.
7. After the CIGS sputtering is completed, cdS is prepared as a buffer layer and a P-N junction forming layer on the surface of the CIGS thin film. CdSO 4 is used as a cadmium source, thiourea is used as a sulfur precursor, NH 3·H2 is used as a buffer solution, a water bath method is used for preparing a CdS film on the surface of the CIGS film, and annealing is carried out at 160 ℃ after the reaction is finished.
8. And preparing cadmium sulfide CdS, intrinsic zinc oxide I-ZnO and aluminum doped zinc oxide AZO films on the surface in sequence by utilizing a magnetron sputtering method, wherein the reaction gases used by the I-ZnO are Ar and O 2, the Ar flow is 200sccm, the O 2 flow is 2sccm, the initial sputtering power is 120W, and the initial sputtering power is increased to 220W later. The reaction gases used by AZO are Ar and H 2, the Ar flow is 200sccm, the H 2 flow is 2sccm, the temperature is required to be kept at 160 ℃ for 15min, and the sputtering power is 750W.
9. The grid electrode is prepared by an electron beam evaporation method. The target materials are Ni and Al, wherein the thickness of the Ni layer is 1500A, the thickness of the Al layer is 100000A, and the grid electrode is obtained, so that the preparation process of the CIGS solar cell is completed.
As shown in fig. 3, comparing the performance parameters of the CIGS solar cell device prepared by the conventional vacuum evaporation method with those of the sputtered CIGS solar cell device can find that the open circuit voltage, the current density and the filling factor of the CIGS solar cell device prepared by the sputtering method are improved to a certain extent, so that the overall photoelectric conversion efficiency of the cell is higher than that of the CIGS device prepared by the evaporation method, and the method disclosed by the invention is proved to be feasible.
Claims (10)
1. A method for adjusting hole concentration of a CIGS thin film by using multi-target sputtering, comprising the following steps:
(1) Taking a clean substrate, and adopting a direct current sputtering method to obtain a Mo film back electrode;
(2) Placing the sample on a sample rack, sending the sample into a high vacuum cavity, and heating the sample;
(3) Filling inert gas into the cavity, starting an intermediate frequency power supply to generate an external electric field, and taking a first target material for pre-sputtering;
(4) Starting a sample frame transmission device, adjusting the sample running speed, and growing to obtain a uniform first CIGS prefabricated layer;
(5) Taking a second target material, and performing first sputtering treatment to obtain a CIGS intermediate layer;
(6) Taking a third target material, and performing secondary sputtering treatment to obtain a CIGS surface film;
(7) Taking out the CIGS film subjected to surface modification treatment after sputtering, and packaging;
The first target comprises 25% of Cu, 17.5% of In, 7.5% of Ga7.5% of Se and 50%;
The second target comprises Cu20%, in20%, ga10% and Se50%;
The components of the third target material comprise Cu22.5%, in17.5%, ga7.5% and S52.5%;
the power used for the pre-sputtering, the first sputtering and the second sputtering is different.
2. The method of claim 1, wherein the substrate in step (1) is a soda lime glass or a flexible substrate;
The conditions of the heating treatment in the step (2) are as follows: the temperature is 130-150 ℃ and the heat preservation time is 30-35min.
3. The method of claim 2, wherein the flexible substrate is a titanium foil or a stainless steel foil.
4. The method of claim 1, wherein the inert gas in step (3) is argon; the conditions of the pre-sputtering are as follows: the flow rate of the inert gas is 190-210sccm, and the pre-sputtering power is 150-160W.
5. The method of claim 1, wherein the growing conditions in step (4) are: the air flow of the introduced inert gas is 200sccm, and the air pressure in the growth chamber is 0.1Pa;
The sample running speed is 0.1-0.15m/s, and the sample passes through the surface of the target material for 6-8 times.
6. The method of claim 1, wherein the conditions of the first sputtering in step (5) are: the flow rate of inert gas is 200sccm, the voltage loaded on the intermediate frequency power supply is 200V-300V, the power is set to be 200W, and the working pressure is 0.3Pa.
7. The method of claim 1, wherein the conditions for the second sputtering in step (6) are: the flow rate of inert gas is 100sccm, the voltage applied to the intermediate frequency power supply is 150V-200V, the set power is 300W, and the working pressure is 0.1Pa.
8. CIGS thin film having a copper concentration gradient, prepared by the method of any one of claims 1-7.
9. A method for adjusting hole concentration of a CIGS solar cell by utilizing multi-target sputtering, which is characterized in that a CIGS film subjected to surface modification treatment is obtained by the method of any one of claims 1-7, cadmium sulfide CdS, intrinsic zinc oxide I-ZnO and aluminum-doped zinc oxide AZO films are sequentially prepared on the surface of the CIGS film, and then a grid is prepared by utilizing electron beam evaporation, so that the CIGS solar cell is obtained.
10. CIGS solar cell with high open circuit voltage and fill factor, prepared by the method of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410280491.3A CN117894881B (en) | 2024-03-12 | Method for adjusting hole concentration of CIGS film or solar cell by utilizing multi-target sputtering |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410280491.3A CN117894881B (en) | 2024-03-12 | Method for adjusting hole concentration of CIGS film or solar cell by utilizing multi-target sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117894881A CN117894881A (en) | 2024-04-16 |
| CN117894881B true CN117894881B (en) | 2024-07-12 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078525A (en) * | 2013-03-27 | 2014-10-01 | 株式会社理光 | Thin-film solar battery and method of making same |
| CN110257770A (en) * | 2019-06-21 | 2019-09-20 | 铜仁梵能移动能源有限公司 | A kind of method of PVD method preparation V-type doping CuInGaSe absorbed layer |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078525A (en) * | 2013-03-27 | 2014-10-01 | 株式会社理光 | Thin-film solar battery and method of making same |
| CN110257770A (en) * | 2019-06-21 | 2019-09-20 | 铜仁梵能移动能源有限公司 | A kind of method of PVD method preparation V-type doping CuInGaSe absorbed layer |
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